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Journal articles on the topic 'Chemical vapour deposition (CVD)'

Author: Grafiati

Published: 4 June 2021

Last updated: 6 September 2023

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1

Chaudhari, Mandakini N. "Thin film Deposition Methods: A Critical Review." International Journal for Research in Applied Science and Engineering Technology 9, no. VI (June 30, 2021): 5215–32. http://dx.doi.org/10.22214/ijraset.2021.36154.

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The aim of this review paper is to present a critical analysis of existing methods of thin film deposition. Paper discusses some thin film techniques which are advanced and popular. The advantages and disadvantages of each method are mentioned. The two major areas of interest discussed are physical and chemical vapor deposition techniques. In general, thin film is a small thickness that produces by physical vapour deposition (PVD) and chemical vapour deposition (CVD). Despite the PVD technique has a few drawbacks, it remains an important method and more beneficial than CVD technique for depositing thin films materials. It is examined that some remarkable similarities and difference between the specific methods. The sub methods which are having common principle are classified. The number of researchers attempted to explain the how the specific method is important and applicable for the deposition of thin films. In conclusion the most important method of depositing thin films is CVD. For our research work the Spray Pyrolysis technique, which is versatile and found suitable to use.

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2

Mohammadi, A., M. A. Hasan, B. Liedberg, I. Lundström, and W. R. Salaneck. "Chemical vapour deposition (CVD) of conducting polymers: Polypyrrole." Synthetic Metals 14, no. 3 (April 1986): 189–97. http://dx.doi.org/10.1016/0379-6779(86)90183-9.

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3

Gómez-Aleixandre, C., J. M. Albella, F. Ojeda, and F. J. Martí. "Síntesis de materiales cerámicos mediante técnicas químicas en fase vapor (CVD)." Boletín de la Sociedad Española de Cerámica y Vidrio 42, no. 1 (February 28, 2003): 27–31. http://dx.doi.org/10.3989/cyv.2003.v42.i1.653.

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4

Loo, Adeline Huiling, Adriano Ambrosi, Alessandra Bonanni, and Martin Pumera. "CVD graphene based immunosensor." RSC Adv. 4, no. 46 (2014): 23952–56. http://dx.doi.org/10.1039/c4ra03506b.

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5

Besmann, T. M., D. P. Stinton, and R. A. Lowden. "Chemical Vapor Deposition Techniques." MRS Bulletin 13, no. 11 (November 1988): 45–51. http://dx.doi.org/10.1557/s0883769400063910.

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Chemical vapor deposition (CVD) is one of the few deposition processes in which the deposited phase is produced in situ via chemical reaction(s). Thus the vapor source for CVD can consist of high vapor pressure species at moderate temperatures and yet deposit very high-melting phases. For example, pure TiB2, which melts at 3225°C, can be produced at 900°C from TiCl4, BC13, and H2.Chemical vapor deposition and its variants such as low pressure CVD (LPCVD), plasma-assisted CVD (PACVD), and laser CVD (LCVD) have been active areas of research for many years. Recent review articles have contained extensive lists of the phases deposited by CVD, which include most of the metals and many carbides, nitrides, borides, silicides, and sulfides. The techniques have found increased acceptance as commercial methods for the fabrication of films and coatings which are fundamental to the semiconductor device and the high-performance tool bit industries. They have been used to prepare multiphase-multilayer coatings, stand-alone bodies, and fiber-reinforced composites. As the demand increases for more complex and sophisticated materials, it is expected that CVD will play a still larger role.In CVD a solid material is deposited from gaseous precursors onto a substrate. The substrate is typically heated to promote the deposition reaction and/or provide sufficient mobility of the adatoms to form the desired structure. Chemical vapor deposition was performed for the first time when early humans inadvertently coated cooking utensils with soot from the campfire. In this CVD process, hydrocarbons generated by the heated wood pyrolyzed on the utensil surface, depositing carbon.

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Han, Shuming, Cailei Yuan, Xingfang Luo, Yingjie Cao, Ting Yu, Yong Yang, Qinliang Li, and Shuangli Ye. "Horizontal growth of MoS2 nanowires by chemical vapour deposition." RSC Advances 5, no. 84 (2015): 68283–86. http://dx.doi.org/10.1039/c5ra13733k.

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7

Moser, Thierry, Kerem Artuk, Yan Jiang, Thomas Feurer, Evgeniia Gilshtein, Ayodhya N. Tiwari, and Fan Fu. "Revealing the perovskite formation kinetics during chemical vapour deposition." Journal of Materials Chemistry A 8, no. 42 (2020): 21973–82. http://dx.doi.org/10.1039/d0ta04501b.

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8

Kumar, R., and R. J. Puddephatt. "New precursors for organometallic chemical vapor deposition of rhodium." Canadian Journal of Chemistry 69, no. 1 (January 1, 1991): 108–10. http://dx.doi.org/10.1139/v91-017.

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The η-cyclopentadienyl (Cp) and η-allyl (C3H5) complexes [RhCp(CO)2], [RhCp(cod)] where cod = 1,5-cyclooctadiene, [Rh(η-C3H5)(CO)2], and [Rh(η-C3H5)3] have been shown to be useful precursors for the chemical vapour deposition (CVD) of rhodium films. The rhodium films contain carbon impurities but these can be greatly reduced if CVD is carried out in the presence of hydrogen. The films adhere well to a silicon substrate. The pyrolysis of [RhCp(CO)2] gives CO and [Rh2Cp2(CO)2(μ-CO)] and [Rh3Cp3(μ-CO)3] at intermediate stages. Pyrolysis of [Rh(η-C3H5)3] or [Rh(η-C3H5)(CO)2] gives 1,5-hexadiene as the only organic product, but similar pyrolysis in the presence of hydrogen gives much propene as well as 1,5-hexadiene. Key words: rhodium, deposition, allyl, cyclopentadienyl.

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9

Saeed, Maryam, Yousef Alshammari, Shereen A. Majeed, and Eissa Al-Nasrallah. "Chemical Vapour Deposition of Graphene—Synthesis, Characterisation, and Applications: A Review." Molecules 25, no. 17 (August 25, 2020): 3856. http://dx.doi.org/10.3390/molecules25173856.

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Graphene as the 2D material with extraordinary properties has attracted the interest of research communities to master the synthesis of this remarkable material at a large scale without sacrificing the quality. Although Top-Down and Bottom-Up approaches produce graphene of different quality, chemical vapour deposition (CVD) stands as the most promising technique. This review details the leading CVD methods for graphene growth, including hot-wall, cold-wall and plasma-enhanced CVD. The role of process conditions and growth substrates on the nucleation and growth of graphene film are thoroughly discussed. The essential characterisation techniques in the study of CVD-grown graphene are reported, highlighting the characteristics of a sample which can be extracted from those techniques. This review also offers a brief overview of the applications to which CVD-grown graphene is well-suited, drawing particular attention to its potential in the sectors of energy and electronic devices.

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10

Chen, Mingguang, Robert C. Haddon, Ruoxue Yan, and Elena Bekyarova. "Advances in transferring chemical vapour deposition graphene: a review." Materials Horizons 4, no. 6 (2017): 1054–63. http://dx.doi.org/10.1039/c7mh00485k.

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11

Thiele, Christian. "Erfolg mit CVD-Diamant." VDI-Z 161, Special-II (2019): 18–19. http://dx.doi.org/10.37544/0042-1766-2019-special-ii-18.

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Die Verschleißfestigkeit von CVD (Chemical Vapour Deposition)- Diamantwerkzeugen überzeugt bei der Bearbeitung von hoch abrasiven Werkstoffen. Mit den CVD-Dickschicht-Diamantwerkzeugen von Paul Horn bearbeitet die Firma Deutsche Technoplast seit einigen Jahren erfolgreich die Werkstoffe PEEK und glasfaserverstärkte Kunststoffe. Die Ergebnisse zeigen, dass sie deutliche Vorteile gegenüber konventionellen Schneidstoffen bieten.

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12

Ji, Dali, Xinyue Wen, Tobias Foller, Yi You, Fei Wang, and Rakesh Joshi. "Chemical Vapour Deposition of Graphene for Durable Anticorrosive Coating on Copper." Nanomaterials 10, no. 12 (December 14, 2020): 2511. http://dx.doi.org/10.3390/nano10122511.

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Due to the excellent chemical inertness, graphene can be used as an anti-corrosive coating to protect metal surfaces. Here, we report the growth of graphene by using a chemical vapour deposition (CVD) process with ethanol as a carbon source. Surface and structural characterisations of CVD grown films suggest the formation of double-layer graphene. Electrochemical impedance spectroscopy has been used to study the anticorrosion behaviour of the CVD grown graphene layer. The observed corrosion rate of 8.08 × 10−14 m/s for graphene-coated copper is 24 times lower than the value for pure copper which shows the potential of graphene as the anticorrosive layer. Furthermore, we observed no significant changes in anticorrosive behaviour of the graphene coated copper samples stored in ambient environment for more than one year.

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13

Huang, Zhaohui, Haitao Liu, Kai Chen, Minghao Fang, Juntong Huang, Shuyue Liu, Saifang Huang, Yan-gai Liu, and Xiaowen Wu. "Synthesis and formation mechanism of twinned SiC nanowires made by a catalyst-free thermal chemical vapour deposition method." RSC Adv. 4, no. 35 (2014): 18360–64. http://dx.doi.org/10.1039/c4ra00073k.

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14

Sirat, Mohamad Shukri, Edhuan Ismail, Hadi Purwanto, Mohd Asyadi Azam Mohd Abid, and Mohd Hanafi Ani. "Growth Conditions of Graphene Grown in Chemical Vapour Deposition (CVD)." Sains Malaysiana 46, no. 7 (July 31, 2017): 1033–38. http://dx.doi.org/10.17576/jsm-2017-4607-04.

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15

Pierson, H. O. "PROCESSING ASPECTS OF CHEMICAL VAPOUR DEPOSITION (CVD) FOR ADVANCED MATERIALS." Advanced Materials and Manufacturing Processes 3, no. 1 (January 1988): 107–25. http://dx.doi.org/10.1080/08842588708953199.

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16

Struppert, Thomas, Andreas Heft, and Bernd Grünler. "Thin functional films by combustion chemical vapour deposition (C-CVD)." Thin Solid Films 520, no. 12 (April 2012): 4106–9. http://dx.doi.org/10.1016/j.tsf.2011.06.048.

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17

Presia, M., Th Heider, L. Schleicher, and G. Nutsch. "Diamond Synthesis by Thermal Plasma Chemical Vapour Deposition (TP-CVD)." Crystal Research and Technology 31, no. 2 (1996): 165–70. http://dx.doi.org/10.1002/crat.2170310206.

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18

SUHR, H. "ChemInform Abstract: Organometallic Compounds in Plasma CVD (Chemical Vapour Deposition)." ChemInform 22, no. 8 (August 23, 2010): no. http://dx.doi.org/10.1002/chin.199108374.

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19

Boscher, Nicolas D., Minghui Wang, and Karen K. Gleason. "Chemical vapour deposition of metalloporphyrins: a simple route towards the preparation of gas separation membranes." Journal of Materials Chemistry A 4, no. 46 (2016): 18144–52. http://dx.doi.org/10.1039/c6ta08003k.

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20

Sompalle, Balaji, Jérôme Borme, Fátima Cerqueira, Tangyou Sun, Rui Campos, and Pedro Alpuim. "Chemical Vapour Deposition of Hexagonal Boron Nitride for Two Dimensional Electronics." U.Porto Journal of Engineering 3, no. 3 (March 27, 2018): 27–34. http://dx.doi.org/10.24840/2183-6493_003.003_0003.

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Hexagonal boron nitride (h-BN) has potential applications in protective coatings, single photon emitters and as substrate for graphene electronics. In this paper, we report on the growth of h-BN by chemical vapor deposition (CVD) using ammonia borane as the precursor. Use of CVD allows controlled synthesis over large areas defined by process parameters, e.g. temperature, time, process chamber pressure and gas partial pressures. Furthermore, independently grown graphene and h-BN layers are put together to realize enhancement in electronic properties of graphene.

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21

Kurek, Agnieszka, Peter G. Gordon, Sarah Karle, Anjana Devi, and Seán T. Barry. "Recent Advances Using Guanidinate Ligands for Chemical Vapour Deposition (CVD) and Atomic Layer Deposition (ALD) Applications." Australian Journal of Chemistry 67, no. 7 (2014): 989. http://dx.doi.org/10.1071/ch14172.

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Volatile metal complexes are important for chemical vapour deposition (CVD) and atomic layer deposition (ALD) to deliver metal components to growing thin films. Compounds that are thermally stable enough to volatilize but that can also react with a specific substrate are uncommon and remain unknown for many metal centres. Guanidinate ligands, as discussed in this review, have proven their utility for CVD and ALD precursors for a broad range of metal centres. Guanidinate complexes have been used to deposit metal oxides, metal nitrides and pure metal films by tuning process parameters. Our review highlights use of guanidinate ligands for CVD and ALD of thin films over the past five years, design trends for precursors, promising precursor candidates and discusses the future outlook of these ligands.

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22

Seki, Yoshiyuki, Yutaka Sawada, Hiroshi Funakubo, Kazuhisa Kawano, and Noriaki Oshima. "Preparation of iridium metal films by spray chemical vapor deposition." MRS Advances 5, no. 31-32 (2020): 1681–85. http://dx.doi.org/10.1557/adv.2020.99.

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AbstractMetal Ir films were prepared by spray chemical vapor deposition (CVD) in air from an Ir precursor, (1,3-cyclohexadiene)(ethylcyclopentadienyl)iridium, Ir(EtCp)(CHD). Film deposition was ascertained at 270–430°C on a SiO2/Si substrate and the deposition rate increased with the deposition temperature but was saturated above 330°C. The obtained films consisted of Ir metal without any iridium oxide impurity irrespective of the deposition temperature. Films tended to orient to (111) with increasing deposition temperature. Resistivity of these Ir films decreased with increasing film thickness and reached to values on the order of 10-6 Ω・cm, which was the same order of the values for bulk Ir metal. Good step coverage was observed for the Ir metal films deposited at 270°C and 330°C. This shows that the simple spray CVD process in air is a good candidate for depositing Ir metal films with good conductivity and step coverage.

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23

Miao, Yuanhao, Guilei Wang, Zhenzhen Kong, Buqing Xu, Xuewei Zhao, Xue Luo, Hongxiao Lin, et al. "Review of Si-Based GeSn CVD Growth and Optoelectronic Applications." Nanomaterials 11, no. 10 (September 29, 2021): 2556. http://dx.doi.org/10.3390/nano11102556.

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GeSn alloys have already attracted extensive attention due to their excellent properties and wide-ranging electronic and optoelectronic applications. Both theoretical and experimental results have shown that direct bandgap GeSn alloys are preferable for Si-based, high-efficiency light source applications. For the abovementioned purposes, molecular beam epitaxy (MBE), physical vapour deposition (PVD), and chemical vapor deposition (CVD) technologies have been extensively explored to grow high-quality GeSn alloys. However, CVD is the dominant growth method in the industry, and it is therefore more easily transferred. This review is focused on the recent progress in GeSn CVD growth (including ion implantation, in situ doping technology, and ohmic contacts), GeSn detectors, GeSn lasers, and GeSn transistors. These review results will provide huge advancements for the research and development of high-performance electronic and optoelectronic devices.

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24

Lorenzzi, Jean, Nikoletta Jegenyes, Mihai Lazar, Dominique Tournier, François Cauwet, Davy Carole, and Gabriel Ferro. "Investigation of 3C-SiC Lateral Growth on 4H-SiC Mesas." Materials Science Forum 679-680 (March 2011): 111–14. http://dx.doi.org/10.4028/www.scientific.net/msf.679-680.111.

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In this work we report on 3C-SiC heteroepitaxial growth on 4H-SiC(0001) substrates which were patterned to form mesa structures. Two different deposition techniques were used and compared: vapour-liquid-solid (VLS) mechanism and chemical vapour deposition (CVD). The results in terms of surface morphology evolution and the polytype formation using these growth techniques were studied and compared. It was observed both 4H lateral growth from the mesa sidewalls and 3C enlargement on top of the mesas, the former being faster with CVD and VLS. Only VLS technique allowed elimination of twin boundaries for proper orientation of the mesa sidewalls.

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Liu, Silin, Haitao Liu, Zhaohui Huang, Minghao Fang, Yan-gai Liu, and Xiaowen Wu. "Synthesis of β-SiC nanowires via a facile CVD method and their photoluminescence properties." RSC Advances 6, no. 29 (2016): 24267–72. http://dx.doi.org/10.1039/c5ra27139h.

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26

Vasilyev, V. Yu, N. B. Morozova, T. V. Basova, I. K. Igumenov, and A. Hassan. "Chemical vapour deposition of Ir-based coatings: chemistry, processes and applications." RSC Advances 5, no. 41 (2015): 32034–63. http://dx.doi.org/10.1039/c5ra03566j.

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27

Stoian, Marius, Liliana Lazar, Florent Uny, Frederic Sanchette, and Ioana Fechete. "Chemical Vapour Deposition (CVD) Technique for Abatement of Volatile Organic Compounds (VOCs)." Revista de Chimie 71, no. 7 (August 4, 2020): 97–113. http://dx.doi.org/10.37358/rc.20.7.8229.

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Chemical vapour deposition (CVD) is an important technique that uses volatile precursors to produce thin film deposits on an exposed substrate, having the capability to generate different types of nanostructures (e.g. nanoparticles, nanotubes, nanofibers or nanocomposites) as catalytic materials. The environmental hazard of volatile organic compounds (VOCs) requires efficient methods to reduce their emission into the atmosphere, due to their high potential to cause severe health issues, along with their extended spread in the environment. Catalytic combustion proves to be one of the most effective means for the abatement of VOCs, employing different catalysts, such as noble metals or non-noble metal oxides, to facilitate the oxidation process of the pollutants. These catalysts can be prepared through various methods as multiple steps wet processes or CVD techniques, indicating the superiority of the CVD-prepared catalysts compared to those prepared using the former type of process, due to the ability to achieve high dispersion of the active material, together with enhanced textural and morphological properties. This paper aims to present the various CVD techniques employed in the fabrication of different catalysts with the possibility of generating materials at nano-scale for use in numerous reactions, mostly in combustion process for VOCs decomposition.

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28

Kalenczuk, R. J., E. Borowiak-Palen, T. Pichler, M. Rümmeli, and J. Fink. "Studies on the Preparation and Characterisation of Carbon Nanostructures." Solid State Phenomena 99-100 (July 2004): 269–72. http://dx.doi.org/10.4028/www.scientific.net/ssp.99-100.269.

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We present a study on the preparation of multiwalled carbon nanotubes (MWCNT) using chemical vapour deposition (CVD). The CVD produced MWCNT and single wall carbon nanotubes (SWCNT) produced with a laser ablation technique were then chemically modified by substituting carbon atoms with boron and nitrogen atoms. The morphology and the crystal structure of the new class of nanostructures were analyzed by means of scanning electron microscopy (SEM) and transmission electron microscopy (TEM).

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29

Pistillo, B. R., K. Menguelti, N. Desbenoit, D. Arl, R. Leturcq, O. M. Ishchenko, M. Kunat, P. K. Baumann, and D. Lenoble. "One step deposition of PEDOT films by plasma radicals assisted polymerization via chemical vapour deposition." Journal of Materials Chemistry C 4, no. 24 (2016): 5617–25. http://dx.doi.org/10.1039/c6tc00181e.

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30

KAKIUCHI, Hiroaki. "Plasma-Enhanced Chemical Vapor Deposition." Journal of the Japan Society for Precision Engineering 82, no. 11 (2016): 956–60. http://dx.doi.org/10.2493/jjspe.82.956.

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31

Kalenik, Jerzy, Konrad Kielbasinski, Piotr Firek, Elżbieta Czerwosz, and Jan Szmidt. "Thermal properties of modified carbon films." Circuit World 42, no. 1 (February 1, 2016): 37–41. http://dx.doi.org/10.1108/cw-10-2015-0055.

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Purpose – The purpose of this paper is to present thermal properties of palladium-carbon films prepared by physical vapour deposition (PVD)/chemical vapour deposition (CVD) methods. Design/methodology/approach – Thin palladium-carbon films were prepared at Tele- and Radioresearch Institute. Test structures containing palladium-carbon films and titanium electrodes were made. Temperature-resistance characteristics were measured. Findings – The results show strong temperature dependence of modified carbon film resistance. The dependence is stable, and so modified carbon films can be applied for various electronic applications. Originality/value – The paper presents thermal properties of thin palladium-carbon prepared by original PVD/CVD method at Tele- and Radioresearch Institute.

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32

Sheel, D. W., L. A. Brook, I. B. Ditta, P. Evans, H. A. Foster, A. Steele, and H. M. Yates. "Biocidal Silver and Silver/Titania Composite Films Grown by Chemical Vapour Deposition." International Journal of Photoenergy 2008 (2008): 1–11. http://dx.doi.org/10.1155/2008/168185.

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This paper describes the growth and testing of highly active biocidal films based on photocatalytically active films ofTiO2, grown by thermal CVD, functionally and structurally modified by deposition of nanostructured silver via a novel flame assisted combination CVD process. The resulting composite films are shown to be highly durable, highly photocatalytically active and are also shown to possess strong antibacterial behaviour. The deposition control, arising from the described approach, offers the potential to control the film nanostructure, which is proposed to be crucial in determining the photo and bioactivity of the combined film structure, and the transparency of the composite films. Furthermore, we show that the resultant films are active to a range of organisms, including Gram-negative and Gram-positive bacteria, and viruses. The very high-biocidal activity is above that expected from the concentrations of silver present, and this is discussed in terms of nanostructure of the titania/silver surface. These properties are especially significant when combined with the well-known durability of CVD deposited thin films, offering new opportunities for enhanced application in areas where biocidal surface functionality is sought.

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Potter, Dominic B., Ivan P. Parkin, and Claire J. Carmalt. "The effect of solvent on Al-doped ZnO thin films depositedviaaerosol assisted CVD." RSC Advances 8, no. 58 (2018): 33164–73. http://dx.doi.org/10.1039/c8ra06417b.

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Suwardiyanto, S., S. Svelle, and R. F. Howe. "Chemical vapour deposition (CVD) of molybdenum into medium pore H-zeolites." IOP Conference Series: Materials Science and Engineering 763 (April 29, 2020): 012056. http://dx.doi.org/10.1088/1757-899x/763/1/012056.

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Kim, K. T., J. J. Wang, and G. Welsch. "Chemical vapor deposition (CVD) of rhenium." Materials Letters 12, no. 1-2 (September 1991): 43–46. http://dx.doi.org/10.1016/0167-577x(91)90054-a.

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36

Nishinaka, H., N. Miyauchi, D. Tahara, S. Morimoto, and M. Yoshimoto. "Incorporation of indium into ε-gallium oxide epitaxial thin films grown via mist chemical vapour deposition for bandgap engineering." CrystEngComm 20, no. 13 (2018): 1882–88. http://dx.doi.org/10.1039/c7ce02103h.

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Epitaxial ε-gallium oxide (Ga₂O₃) thin films incorporated with In were successfully grown by mist chemical vapour deposition (CVD) on c-plane sapphire substrates for bandgap tuning.

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37

Sarawutanukul, Sangchai, Nutthaphon Phattharasupakun, Juthaporn Wutthiprom, and Montree Sawangphruk. "Oxidative chemical vapour deposition of a graphene oxide carbocatalyst on 3D nickel foam as a collaborative electrocatalyst towards the hydrogen evolution reaction in acidic electrolyte." Sustainable Energy & Fuels 2, no. 6 (2018): 1305–11. http://dx.doi.org/10.1039/c8se00161h.

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In this study, a graphene oxide (GO) carbocatalyst was synthesized as a thin film on a 3D Ni foam substrate (GO@Ni) by oxidative chemical vapour deposition (CVD) using methanol and water as precursors.

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38

Wang, Shanshan, Hidetaka Sawada, Christopher S. Allen, Angus I. Kirkland, and Jamie H. Warner. "Orientation dependent interlayer stacking structure in bilayer MoS2domains." Nanoscale 9, no. 35 (2017): 13060–68. http://dx.doi.org/10.1039/c7nr03198j.

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39

Dinara, Syed Mukulika, Aneeya K. Samantara, Jiban K. Das, J. N. Behera, Saroj K. Nayak, Dattatray J. Late, and Chandra Sekhar Rout. "Synthesis of a 3D free standing crystalline NiSex matrix for electrochemical energy storage applications." Dalton Transactions 48, no. 45 (2019): 16873–81. http://dx.doi.org/10.1039/c9dt03150b.

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Self-supported heterogeneous NiSex nanocrystals grown by a facile one-step chemical vapour deposition (CVD) method show excellent electrochemical behaviour with a retention of 88% of initial capacitance even after 10 000 repeated cycles.

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Huang, Jingfeng, Hu Chen, Wenbin Niu, Derrick W. H. Fam, Alagappan Palaniappan, Melanie Larisika, Steve H. Faulkner, et al. "Highly manufacturable graphene oxide biosensor for sensitive Interleukin-6 detection." RSC Advances 5, no. 49 (2015): 39245–51. http://dx.doi.org/10.1039/c5ra05854f.

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Reduced graphene oxide can be used as a sensitive label-free sensor transducer for detection of Interleukin-6 proteins, by overcoming the variable coverage and high electrical resistance, via ethanol Chemical Vapour Deposition (CVD).

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Kudus, Muhammad Helmi Abdul, Md Akil Hazizan, and Mohamad Hasmaliza. "Effect of Calcination and Reduction Process on MWCNT Growth during Synthesizing MWCNT-Alumina Hybrid as Composite Reinforcement." Advanced Materials Research 364 (October 2011): 475–79. http://dx.doi.org/10.4028/www.scientific.net/amr.364.475.

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Multiwall carbon nanotube (MWCNT) and alumina hybrid compound prepared via chemical vapour deposition (CVD). The CVD process always reported that the catalyst must undergo calcinations and reduction process before growing the carbon nanotube (CNT). In this work, MWCNT-alumina hybrid was successfully synthesized via simple CVD method. The morphologies study showed that the MWCNT-alumina hybrid with calcination and reduction, and calcination without reduction has been successfully synthesized.

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Potter, Dominic B., Michael J. Powell, Jawwad A. Darr, Ivan P. Parkin, and Claire J. Carmalt. "Transparent conducting oxide thin films of Si-doped ZnO prepared by aerosol assisted CVD." RSC Advances 7, no. 18 (2017): 10806–14. http://dx.doi.org/10.1039/c6ra27748a.

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Sharma, K., B. L. Williams, A. Mittal, H. C. M. Knoops, B. J. Kniknie, N. J. Bakker, W. M. M. Kessels, R. E. I. Schropp, and M. Creatore. "Expanding Thermal Plasma Chemical Vapour Deposition of ZnO:Al Layers for CIGS Solar Cells." International Journal of Photoenergy 2014 (July 6, 2014): 1–9. http://dx.doi.org/10.1155/2014/253140.

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Aluminium-doped zinc oxide (ZnO:Al) grown by expanding thermal plasma chemical vapour deposition (ETP-CVD) has demonstrated excellent electrical and optical properties, which make it an attractive candidate as a transparent conductive oxide for photovoltaic applications. However, when depositing ZnO:Al on CIGS solar cell stacks, one should be aware that high substrate temperature processing (i.e., >200°C) can damage the crucial underlying layers/interfaces (such as CIGS/CdS and CdS/i-ZnO). In this paper, the potential of adopting ETP-CVD ZnO:Al in CIGS solar cells is assessed: the effect of substrate temperature during film deposition on both the electrical properties of the ZnO:Al and the eventual performance of the CIGS solar cells was investigated. For ZnO:Al films grown using the high thermal budget (HTB) condition, lower resistivities, ρ, were achievable (~5 × 10−4 Ω·cm) than those grown using the low thermal budget (LTB) conditions (~2 × 10−3 Ω·cm), whereas higher CIGS conversion efficiencies were obtained for the LTB condition (up to 10.9%) than for the HTB condition (up to 9.0%). Whereas such temperature-dependence of CIGS device parameters has previously been linked with chemical migration between individual layers, we demonstrate that in this case it is primarily attributed to the prevalence of shunt currents.

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Januś, M., K. Kyzioł, S. Kluska, J. Konefał-Góral, A. Małek, and S. Jonas. "Plasma Assisted Chemical Vapour Deposition – Technological Design Of Functional Coatings." Archives of Metallurgy and Materials 60, no. 2 (June 1, 2015): 909–14. http://dx.doi.org/10.1515/amm-2015-0228.

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Abstract Plasma Assisted Chemical Vapour Deposition (PA CVD) method allows to deposit of homogeneous, well-adhesive coatings at lower temperature on different substrates. Plasmochemical treatment significantly impacts on physicochemical parameters of modified surfaces. In this study we present the overview of the possibilities of plasma processes for the deposition of diamond-like carbon coatings doped Si and/or N atoms on the Ti Grade2, aluminum-zinc alloy and polyetherketone substrate. Depending on the type of modified substrate had improved the corrosion properties including biocompatibility of titanium surface, increase of surface hardness with deposition of good adhesion and fine-grained coatings (in the case of Al-Zn alloy) and improving of the wear resistance (in the case of PEEK substrate).

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Ratnasingham, S. R., L. Mohan, M. Daboczi, T. Degousée, R. Binions, O. Fenwick, J. S. Kim, M. A. McLachlan, and J. Briscoe. "Novel scalable aerosol-assisted CVD route for perovskite solar cells." Materials Advances 2, no. 5 (2021): 1606–12. http://dx.doi.org/10.1039/d0ma00906g.

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A perovskite solar cell is produced using the scalable technique aerosol-assisted chemical vapour deposition for the first time. This is achieved by using a 2-step process with lead acetate as the lead source and methanol as the solvent.

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Salifairus, M. J., and Mohamad Rusop. "Synthesis of Carbon Nanotubes by Chemical Vapour Deposition of Camphor Oil over Ferrocene and Aluminum Isopropoxide Catalyst." Advanced Materials Research 667 (March 2013): 213–17. http://dx.doi.org/10.4028/www.scientific.net/amr.667.213.

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The aim of this study is to engage a basic understanding of the information carbon nanotubes (CNTs) may yield when this CNTs is deposited on silicon substrate over ferrocene and aluminum isopropoxide catalyst. Several popular methods are used to produce high quality CNT such as chemical vapour deposition, arc discharge and others. Most promising method is, chemical vapour deposition (CVD), used to produce CNTs in this experiment. The carbon source and catalyst were placed at different alumina boat in furnace one (1). The silicon substrate was placed at the deposition furnace and range temperature from 700 oC to 900 oC. The G-band peaks of the CNTs appear at round 1580 cm-1 and D-band peaks appear at 1348 cm-1. Thermal analyses show the percentage of CNTs weight loss 75.12%, 86.39%, 86.54%, 87% and 92.3% respectively. FESEM images was observed to study the formation of the CNTs. The CNTs were successfully synthesized from the chemical vapour deposition method.

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Wang, B. B., K. Ostrikov, T. van der Laan, K. Zheng, R. Shao, M. K. Zhu, and S. S. Zou. "Growth and photoluminescence of oriented MoSe2nanosheets produced by hot filament CVD." RSC Advances 6, no. 43 (2016): 37236–45. http://dx.doi.org/10.1039/c6ra05737c.

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Oriented MoSe₂nanosheets with varying layers and structures were synthesized on silicon substrates by hot filament chemical vapour deposition in a nitrogen environment using MoO₃and Se powders as precursors.

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Thakur, Deepa, Pawan Kumar, and Viswanath Balakrishnan. "Phase selective CVD growth and photoinduced 1T → 1H phase transition in a WS2 monolayer." Journal of Materials Chemistry C 8, no. 30 (2020): 10438–47. http://dx.doi.org/10.1039/d0tc02037k.

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We report the direct chemical vapour deposition (CVD) growth of the metastable 1T phase of a WS₂ monolayer and the in situ phase transition characteristics with the aid of Raman, photoluminescence and fluorescence microscopy.

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Ragavan, R., and A. Pandurangan. "Facile synthesis and supercapacitor performances of nitrogen doped CNTs grown over mesoporous Fe/SBA-15 catalyst." New Journal of Chemistry 41, no. 20 (2017): 11591–99. http://dx.doi.org/10.1039/c7nj00804j.

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Herein, we report a new strategy to synthesize high-yield nitrogen-doped carbon nanotubes (NCNTs) using iron-supported SBA-15 as a catalystviathe chemical vapour deposition (CVD) method to utilize them as an electrode material for supercapacitors.

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Song, Botao, Bing Gao, Pengfei Han, and Yue Yu. "Surface Kinetic Mechanisms of Epitaxial Chemical Vapour Deposition of 4H Silicon Carbide Growth by Methyltrichlorosilane-H2 Gaseous System." Materials 15, no. 11 (May 25, 2022): 3768. http://dx.doi.org/10.3390/ma15113768.

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The chemical vapour deposition (CVD) technique could be used to fabricate a silicon carbide (SiC) epitaxial layer. Methyltrichlorosilane (CH3SiCl3, MTS) is widely used as a precursor for CVD of SiC with a wide range of allowable deposition temperatures. Typically, an appropriate model for the CVD process involves kinetic mechanisms of both gas-phase reactions and surface reactions. Here, we proposed the surface kinetic mechanisms of epitaxial SiC growth for MTS-H2 gaseous system where the MTS employed as the single precursor diluted in H2. The deposition face is assumed to be the Si face with a surface site terminated by an open site or H atom. The kinetic mechanisms for surface reactions proposed in this work for MTS-H2 gaseous system of epitaxial growth of SiC by CVD technique from mechanisms proposed for H-Si-C-Cl system are discussed in detail. Predicted components of surface species and growth rates at different mechanisms are discussed in detail.

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