Dissertations / Theses on the topic 'Chemical vapour transport'

The objective of this thesis is to develop an easy-to-use and computationally economical numerical tool to investigate the flow field in the Pulsed Pressure Chemical Vapour Deposition (PP-CVD) reactor. The PP-CVD process is a novel thin film deposition technique with some advantages over traditional CVD methods. The numerical modelling of the PP-CVD flow field is carried out using the Quiet Direct Simulation (QDS) method, which is a flux-based kinetic-theory approach. Two approaches are considered for the flux reconstruction, which are the true directional manner and the directional splitting method. Both the true directional and the directional decoupled QDS codes are validated against various numerical methods which include EFM, direct simulation, Riemann solver and the Godunov method. Both two dimensional and axisymmetric test problems are considered. Simulations are conducted to investigate the PP-CVD reactor flow field at 1 Pa and 1 kPa reactor base pressures. A droplet flash evaporation model is presented to model the evaporation and transport of the liquid droplets injected. The solution of the droplet flash evaporation model is used as the inlet conditions for the QDS gas phase solver. The droplet model is found to be able to provide pressure rise in the reactor at the predicted rate. A series of parametric studies are conducted for the PP-CVD process. The numerical study confirms the hypothesis that the flow field uniformity is insensitive to the reactor geometry. However, a sufficient distance from the injection inlet is required to allow the injected precursor solution to diffuse uniformly before reaching the substrate. It is also recommended that placement of the substrate at the reactor’s centre axis should be avoided.

Die ternären Systeme Ti/P/Te, Ce/P/Te und Si/P/Te wurden in der vorliegenden Dissertation hinsichtlich der Existenz neuer Verbindungen untersucht. Diese Verbindungen wurden insbesondere in Bezug auf ihre thermochemischen Eigenschaften charakterisiert. Durch Kombination von experimentellen Untersuchungen und thermodynamischen Modellierungen der ablaufenden Festkörper-Gasphasen-Gleichgewichte konnten die Synthesen der neuen Verbindungen optimiert werden. Abschließend erfolgte zudem die physikalische und kristallographische Charakterisierung der gefundenen Phosphidtelluride.

Die Planung von Festkörpersynthesen schließt neben einer sinnvollen Aufteilung der zu untersuchenden Bereiche der Zusammensetzung xi auch eine fundierte Abschätzung der zu erwartenden Existenzbereiche (p, T)x der neuen Phasen ein. Die Form der Darstellung der Phasengleichgewichte in Zustandsbarogrammen folgt aus den thermodynamischen Beziehungen der betreffenden Gasphasenreaktionen (Kp G(T)) als lg(p) - 1/T - Diagramm. Für einfache Konstitutionstypen von Zustandsdiagrammen und –barogrammen wurde eine zusammenfassende Darstellung gegeben. Neben der Abhängigkeit der Existenz von Festkörpern von deren Gesamtdruck können sich wesentliche Bedingungen der Phasenbildung aus dem Partialdruckverhalten der Komponenten ergeben. Für eine phasenreine Darstellung von Oxiden erweist sich entsprechend die Einstellung des Sauerstoffpartialdrucks p(O2) als essentiell. Zur globalen Einordnung der Existenzbereiche (p(O2), T) bzw. der abgeleiteten Redox-Potentiale oxidischer Festkörper wurde das Konzept einer elektrochemischen Spannungsreihe für Festkörper entwickelt. Auf der Grundlage dieser Prinzipien und mit der Anschaulichkeit der Diagramme der Spannungsreihe lassen sich die Redoxgleichgewichte von Festkörperreaktionen beliebiger Kombination der Elemente M und M’ in einfacher Weise abschätzen. Über die Prinzipien druckabhängiger Gleichgewichtsbeziehungen zwischen kondensierten Bodenkörpern und der Gasphase in einem Gleichgewichtsraum hinaus wurden auch die Mechanismen von Bodenkörper-Gasphasen-Gleichgewichten zwischen zwei miteinander verbundenen Gleichgewichtsräumen untersucht. Neben den bekannten Erscheinungen der Sublimation und Zersetzungssublimation wurde ein neuer Reaktionsmechanismus des Chemischen Transports mit theoretischen Hintergründen, thermodynamischen Modellierungen und experimentellen Beispielen als Auto- oder Selbsttransport beschrieben
The planning of solid-state synthesis includes beside the areas of composition x a thorough assessment of the existence ranges (p, T) of the new phases. The form of presentation of the phase equilibria in phase barograms follows from the thermodynamic relations of the gas-phase reactions (Kp, G(T)) as a lg(p) - 1/T - diagram. For simple constitution types of phase diagrams and barograms a summary was presented. Apart from the dependence of the existence of solids from the total pressure essential conditions of the phase formation can be deduced from the partial pressure behaviour of the components. The oxygen partial pressure p(O2) is accordingly essential for the formation of phase pure oxides. For global classification of the existence ranges (p(O2), T) and the derived redox potentials of oxidic solids, the concept of an electromotive series for solids has been originated. On the basis of these principles, and with the clarity of the diagrams of the voltage range the redox balance of solid state reactions of any combination of elements M and M' in a simple way is to estimate. In addition to the principles of pressure equilibria between condensed materials and the gas phase in only one equilibrium range the mechanisms of solid - gas equilibria between two interconnected ranges were also described. Besides the well-known phenomena of sublimation and decomposition sublimation a new reaction mechanism of the chemical transport was evaluated as an Auto- or Selftransport with theoretical backgrounds, thermodynamic modelling and experimental examples

Die ternären Systeme Ti/P/Te, Ce/P/Te und Si/P/Te wurden in der vorliegenden Dissertation hinsichtlich der Existenz neuer Verbindungen untersucht. Diese Verbindungen wurden insbesondere in Bezug auf ihre thermochemischen Eigenschaften charakterisiert. Durch Kombination von experimentellen Untersuchungen und thermodynamischen Modellierungen der ablaufenden Festkörper-Gasphasen-Gleichgewichte konnten die Synthesen der neuen Verbindungen optimiert werden. Abschließend erfolgte zudem die physikalische und kristallographische Charakterisierung der gefundenen Phosphidtelluride.

Die Planung von Festkörpersynthesen schließt neben einer sinnvollen Aufteilung der zu untersuchenden Bereiche der Zusammensetzung xi auch eine fundierte Abschätzung der zu erwartenden Existenzbereiche (p, T)x der neuen Phasen ein. Die Form der Darstellung der Phasengleichgewichte in Zustandsbarogrammen folgt aus den thermodynamischen Beziehungen der betreffenden Gasphasenreaktionen (Kp G(T)) als lg(p) - 1/T - Diagramm. Für einfache Konstitutionstypen von Zustandsdiagrammen und –barogrammen wurde eine zusammenfassende Darstellung gegeben. Neben der Abhängigkeit der Existenz von Festkörpern von deren Gesamtdruck können sich wesentliche Bedingungen der Phasenbildung aus dem Partialdruckverhalten der Komponenten ergeben. Für eine phasenreine Darstellung von Oxiden erweist sich entsprechend die Einstellung des Sauerstoffpartialdrucks p(O2) als essentiell. Zur globalen Einordnung der Existenzbereiche (p(O2), T) bzw. der abgeleiteten Redox-Potentiale oxidischer Festkörper wurde das Konzept einer elektrochemischen Spannungsreihe für Festkörper entwickelt. Auf der Grundlage dieser Prinzipien und mit der Anschaulichkeit der Diagramme der Spannungsreihe lassen sich die Redoxgleichgewichte von Festkörperreaktionen beliebiger Kombination der Elemente M und M’ in einfacher Weise abschätzen. Über die Prinzipien druckabhängiger Gleichgewichtsbeziehungen zwischen kondensierten Bodenkörpern und der Gasphase in einem Gleichgewichtsraum hinaus wurden auch die Mechanismen von Bodenkörper-Gasphasen-Gleichgewichten zwischen zwei miteinander verbundenen Gleichgewichtsräumen untersucht. Neben den bekannten Erscheinungen der Sublimation und Zersetzungssublimation wurde ein neuer Reaktionsmechanismus des Chemischen Transports mit theoretischen Hintergründen, thermodynamischen Modellierungen und experimentellen Beispielen als Auto- oder Selbsttransport beschrieben.
The planning of solid-state synthesis includes beside the areas of composition x a thorough assessment of the existence ranges (p, T) of the new phases. The form of presentation of the phase equilibria in phase barograms follows from the thermodynamic relations of the gas-phase reactions (Kp, G(T)) as a lg(p) - 1/T - diagram. For simple constitution types of phase diagrams and barograms a summary was presented. Apart from the dependence of the existence of solids from the total pressure essential conditions of the phase formation can be deduced from the partial pressure behaviour of the components. The oxygen partial pressure p(O2) is accordingly essential for the formation of phase pure oxides. For global classification of the existence ranges (p(O2), T) and the derived redox potentials of oxidic solids, the concept of an electromotive series for solids has been originated. On the basis of these principles, and with the clarity of the diagrams of the voltage range the redox balance of solid state reactions of any combination of elements M and M' in a simple way is to estimate. In addition to the principles of pressure equilibria between condensed materials and the gas phase in only one equilibrium range the mechanisms of solid - gas equilibria between two interconnected ranges were also described. Besides the well-known phenomena of sublimation and decomposition sublimation a new reaction mechanism of the chemical transport was evaluated as an Auto- or Selftransport with theoretical backgrounds, thermodynamic modelling and experimental examples.

Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Chemical Engineering, 1989.
Science hard copy bound in 2 v.
Includes bibliographical references (leaves 316-328).
by Sanjay Patnaik.
Ph.D.

With the advent of microelectronics and micromechanical systems, the benefits of miniaturized technology became evident. With the discovery of carbon nanotubes by Iijima in 1991, a material has been found that offers superior porperties such as high tensile strength, excellent electrical and heat conductivity while being lightweight, flexible and tunable by the specific atomic arrangement in its structure. The first part of this thesis deals with a new synthesis approach, which combines the known routes of chemical vapour deposition and laser ablation. The results concerning diameter and yield fit well within an established model for the nucleation and growth of carbon nanotubes and extend it by considering a larger parameter space. Furthermore, conventional laser ablation has been used to synthesize C-13 augmented carbon nanotubes, whose diameters depend among the usual synthesis parameters also on the C-13 content, an influence which is in line with the changed thermal conductivities of isotope mixtures. Manipulation of carbon nanotubes inside a transmission electron microscope forms the second part of this thesis. With the help of an in-situ nanomanipulator, several experiments involving the mechanical and electrical properties of carbon nanotubes have been performed. Two-probe resistances of individual nanotubes have been measured and the observation of individual shell failures allowed for the determination of current limits per carbon shell. With the help of electrical current, a nanotube was modified in its electrical characteristics by reshaping its structure. By application of DC-currents or square current pulses, the filling of iron- or cementite-filled multi-wall carbon nanotubes has been found to move in a polarity-defined direction guided by the nanotube walls. Depending on the current, nanotube shape, and composition of the filling different regimes of material transport have been identified, including the reworking of the inner nanotube shells. The application of a high driving current leads to a complete reworking of the host nanotube and the current-induced growth of carbonaceous nanostructures of changed morphology. Utilizing the obtained results, a transport mechanism involving momentum transfer from the electron wind to the filling atoms and a solid filling core during transport is developed and discussed. Finally, measurements of mechanical properties using electrically induced resonant or non-resonant vibrations inside the transmission electron microscope have been observed and important mechanical parameters have been determined with the help of a modified Euler-Bernoulli-beam approach
Mit dem Aufkommen von Mikroelektronik und mikromechanischen Systemen wurden die Vorteile miniaturisierter Geräte augenscheinlich. Mit der Entdeckung von Kohlenstoff-Nanoröhren durch Iijima 1991 wurde ein Material gefunden, welches überlegene Eigenschaften wie hohe Festigkeit, exzellente elektrische und Wärmeleitfähigkeit zeigt, während es zeitgleich leicht und flexibel ist. Diese Eigentschaften können durch eine Änderung der spezifischen atomaren Anordnung in der Nanoröhrenhülle beeinflusst werden. Der erste Teil dieser Dissertationsschrift behandelt einen neuartigen Syntheseansatz, welche die bekannten Syntheserouten der chemischen Gasphasenabscheidung und Laserablation kombiniert. Die Ergebnisse bezüglich des Durchmessers und der Ausbeute lassen sich gut mit einem etablierten Modell der Nukleation und des Wachstums von Kohlenstoff-Nanoröhren beschreiben - sie erweitern es, indem sie einen größeren Parameterraum berücksichtigen. Des Weiteren wurde konventionelle Laserablation benutzt, um C-13 angereicherte Kohlenstoff-Nanoröhren herzustellen, deren Durchmesser nicht nur von den üblichen Parametern, sondern auch vom C-13 Anteil abhängt. Diese Abhängigkeit geht mit der veränderten thermischen Leitfähigkeit von Isotopenmischungen einher. Die Manipulation von Kohlenstoff-Nanoröhren in einem Transmission-Elektronenmikroskop formt den zweiten Teil der Dissertationschrift. Mit Hilfe eines in-situ Manipulators wurden vielfältige Experimente durchgeführt, um die mechanischen und elektrischen Eigenschaften der Kohlenstoff-Nanoröhren zu bestimmen. Zweipunktmessungen des Widerstands einzelner Nanoröhren und die Beobachtung des Versagens einzelner Kohlenstoffschichten erlaubte die Bestimmung der Stromtragfähigkeit einzelner Hüllen. Mit Hilfe eines elektrischen Stromes konnte eine Nanoröhre durch die veränderung der Struktur in ihren elektrischen Eigenschaften verändert werden. Unter Verwendung dauerhaften oder gepulsten Gleichstroms konnte die Eisen- oder Zementit-Füllung der Kohlenstoff-Nanoröhren in eine polaritätsabhängige Richtung bewegt werden. Die Füllung wurde dabei durch die Wände der Nanoröhre geführt. Abhängig von Strom, Form der Nanoröhre und Zusammensetzung der Füllung ließen sich verschiedene Bereiche des Materialtransports identifizieren, u.a. das Umarbeiten einiger innerer Kohlenstoffschichten. Ein hoher Strom hingegen bewirkt eine Umarbeitung der kompletten Nanoröhre und strominduziertes Wachstum von Kohlenstoff-Nanostrukturen mit veränderter Morphologie. Mit Hilfe der gewonnenen Resultate wurde ein Transportmodell entwickelt, welches den Impulstransfer von Elektronen an Füllungsatome sowie einen festen Füllungskern während des Transports diskutiert. Messungen der mechanischen Eigenschaften, welche mit Hilfe von resonanter oder nicht-resonanter elektrischer Anregung von Schwingungen im Transmissions-Elektronenmikroskop durchgeführt wurden bilden den Abschluss der Arbeit. Durch die Beobachtungen konnten mit einem modifizierten Euler-Bernoulli-Balkenmodell wichtige mechanische Eigenschaften bestimmt werden

Spintronics reaches beyond typical charge-based information storage technologies by utilizing an addressable degree of freedom for electron manipulation, the electron spin polarization. With mounting experimental data and improved theoretical understanding of spin manipulation, spintronics has become a potential alternative to charge-based technologies. However, for a long time, spintronics was not thought to be feasible without the ability to electrostatically control spin conductance at room temperature. Only recently, graphene, a 2D honeycomb crystalline allotrope of carbon only one atom thick, was identified because of its predicted, long spin coherence length and experimentally realized electrostatic gate tunability. However, there exist several challenges with graphene spintronics implementation including weak spin-orbit coupling that provides excellent spin transfer yet prevents charge to spin current conversion, and a conductivity mismatch due to the large difference in carrier density between graphene and a ferromagnet (FM) that must be mitigated by use of a tunnel barrier contact. Additionally, the usage of graphene produced via CVD methods amenable to semiconductor industry in conjunction with graphene spin valve fabrication must be explored in order to promote implementation of graphene-based spintronics. Despite advances in the area of graphene-based spintronics, there is a lack of understanding regarding the coupling of industry-amenable techniques for both graphene synthesis and lateral spin valve fabrication. In order to make any impact on the application of graphene spintronics in industry, it is critical to demonstrate wafer-scale graphene spin devices enabled by wafer-scale graphene synthesis, which utilizes thin film, wafer-supported CVD growth methods. In this work, high-quality graphene was synthesized using a vertical cold-wall furnace and catalyst confinement on both SiO2/Si and C-plane sapphire wafers and the implementation of the as-grown graphene for fabrication of graphene-based non-local spin valves was examined. Optimized CVD graphene was demonstrated to have ID/G ≈ 0.04 and I2D/G ≈ 2.3 across a 2" diameter graphene film with excellent continuity and uniformity. Since high-quality, large-area, and continuous CVD graphene was grown, it enabled the fabrication of large device arrays with 40 individually addressable non-local spin valves exhibiting 83% yield. Using these arrays, the effects of channel width and length, ferromagnetic-tunnel barrier width, tunnel barrier thickness, and level of oxidation for Ti-based tunnel barrier contacts were elucidated. Non-local, in-plane magnetic sweeps resulted in high signal-to-noise ratios with measured ΔRNL across the as-fabricated arrays as high as 12 Ω with channel lengths up to 2 µm. In addition to in-plane magnetic field spin signal values, vertical magnetic field precession Hanle effect measurements were conducted. From this, spin transport properties were extracted including: spin polarization efficiency, coherence lifetime, and coherence distance. The evaluation of industry-amenable production methods of both high-quality graphene and lateral graphene non-local spin valves are the first steps toward promoting the feasibility of graphene as a lateral spin transport interconnect material in future spintronics applications. By addressing issues using a holistic approach, from graphene synthesis to spin transport implementation, it is possible to begin assessment of the challenges involved for graphene spintronics.

Chemická depozice grafenu z plynné fáze (CVD) je metoda schopná produkovat grafenové monovrstvy velkých velkých rozměrů. Část experimentální práce v rámci této diplomové práce je zaměřena na depozici a analýzu grafenových monokrys- talů připravených metodou CVD na měděném substrátu. Pro analýu grafénových domén je použito technik optické mikroskopie, elektronové mikroskopie, mikroskopie atomárních sil a Ramanovy spektroskopie. Úkolem další části je studium defektů po- zorovaných na mědi po depozici grafenu pomocí energiově disperzní rentgenové spek- troskopie. Množství těchto defektů bylo odstraněno úpravou depozičního systému ačkoliv takto nebylo dosaženo eliminování všech typů defektů. Poslední část této práce se zabývá měření elektro-transportních vlastností grafenu. Výsledky této části zahrnují měření ve vakuu se zapojeným hradlovým napětím a měření při nízkých teplotách v magnetickém poli.

This diploma thesis deals with electrical conductivity of a graphene sample, preparation of a graphene field-effect transistor and his irradiation by electron beam. In the theoretical part of the thesis, we describe electronic properties of graphene, preparation of graphene by CVD and its transfer to Si substrate with SiO_2 layer. Experimental part of this thesis is focused on the preparation of a graphene field-effect transistor for use in UHV conditions. Futher describes electron beam scanning over the transistor and creation of current maps of tranzistor. In the last part, the thesis deals with influence of electron beam on transport properties of graphene layer and doping of graphene layer by electron beam.

Dans les applications industrielles et lors des opérations de transport du gaz naturel, la présence d'eau sous forme liquide ou en phase vapeur peut entraîner la formation d'hydrates provoquant le colmatage des unités industrielles et des lignes de conduites et il est indispensable de définir précisément les seuils de déshydratation à réaliser, afin d'éviter la formation d'hydrates. Cela est réalisé à l'aide d'un modèle thermodynamique qui prédit la stabilité des hydrates, en fonction de la température, de la pression et de la composition du gaz.Les modèles thermodynamiques classiques, développés uniquement sur la base de données expérimentales de formation d'hydrates en présence d'eau liquide, surestiment fortement la température de dissociation des hydrates en l'absence d'une phase aqueuse.Dans le but de définir un modèle thermodynamique capable de représenter convenablement les équilibres de phases vapeur-hydrate et prédire ainsi la température de dissociation des hydrates que l'on soit en présence ou en l'absence d'eau liquide, nous avons mis au point une méthodologie originale pour la détermination de la température de dissociation des hydrates de corps purs et de mélanges en l'absence d'eau liquide. Cette méthodologie, basée sur le suivi de la teneur en eau de phase vapeur, en fonction de la température par coulométrie Karl Fischer, a permis la détermination de la température de dissociation de plusieurs hydrates simples et mixtes à des teneurs en eau et pressions différentes ainsi que les quantités d'hydrates formées dans ces conditions.Sur la base de ces nouvelles données, nous avons défini un modèle thermodynamique basé sur l'utilisation de l'approche de Dharmawardhana pour le calcul de la fugacité de l'eau dans l'hydrate vide,le potentiel de Kihara pour le calcul de la constante de Langmuir et l'équation d'état CPA (Cubic Plus Association) pour la modélisation des phases fluides. Nous avons montré que l'utilisation de l'équation d'état CPA, capable de prendre en compte l'auto association de l'eau apporte une amélioration très significative.Le développement d'un flash biphasique hydrate-fluide nous a permis de calculer les quantités d'hydrates mixtes formées et de les comparer à nos données expérimentales.

This diploma thesis is focused on the applications and fabrication of graphene membrane from graphene prepared by the chemical vapor deposition. Theoretical part deals with transport properties of the graphene and multiple scattering processes limiting the charge carrier mobility in this material. Included is short review of graphene membrane applications. Experimental part provides fabrication process for achieving suspended graphene device by utilizing electron beam lithography, focused ion beam, chemical etching and patterning of graphene. Graphene membrane is characterized by transport properties measurement and compared to non-suspended graphene.

In Topologischen Isolatoren (TI) werden metallische Zustände an der Oberfläche beobachtet, während die entsprechenden Volumenzustände eine Bandlücke aufweisen. Der Volumenbeitrag zur Leitfähigkeit von TI-Materialien macht eine Synthese von Nanokristallen bzw. eine Dotierung nötig. Der Fokus der Untersuchungen dieser Arbeit liegt dabei auf der Erzeugung von Nanokristallen der TI-Materialien Bi2Te3- und Bi2Te2Se sowie dotierter Bi2Se3-Nanokristallen. Die Synthese der Nanokristalle erfolgte durch den Gasphasentransport im geschlossenen System über den Mechanismus einer Zersetzungssublimation bzw. unter dem Einsatz eines Transportmittels. Für eine erfolgreiche Erzeugung der Nanokristalle sind im Vorfeld thermodynamische Modellierungen des Gasphasentransports sowie Versuche zum chemischen Transport für die quasibinären Systeme Bi2Se3-Bi2Te3, Bi2Se3-Sb2Se3 und Bi2Se3-FeSe sowie für das ternäre System Mn-Bi-Se durchgeführt worden. Durch Versuche zum chemischen Transport konnten die Aussagen der Modellierung bestätigt und im Weiteren der Dotandengehalt in den abgeschiedenen Kristallen sowie der Einlagerungsmechanismus durch Ergebnisse aus XRD- und ICP-OES-Untersuchungen beschrieben werden. Die Synthese bzw. Dotierung der Nanokristalle wurde hauptsächlich durch die Transportrate und den Dampfdruck des Dotanden bestimmt. In den Systemen Bi2Se3-Bi2Te3 und Bi2Se3-Sb2Se3 ist ein Gasphasentransport über eine Zersetzungssublimation durchführbar und resultierte in einer erfolgreichen Darstellung von Bi2Te3- und Bi2Te2Se-Nanokristallen sowie von dotierten (SbxBi1-x)2Se3-Nanokristallen. Entgegen dessen erfolgte der Gasphasentransport in den Systemen Bi2Se3-FeSe und Mn-Bi-Se unter Verwendung eines Transportmittels. Hierbei verringerten die gesteigerten Transportraten das Wachtum von Nanokristallen. Im Weiteren gelang es dotierte (Fe,Mn)xBi2-xSe3-Volumenkristalle sowie MnBi2Se4-Einkristalle darzustellen und mittels XRD, ICP-OES, magnetischer Messungen sowie elektrischem Transport zu charakterisieren.

Laser Chemical Vapor Deposition (LCVD) has been shown to have great potential for the manufacture of small, complex, two or three dimensional metal and ceramic parts. One of the most promising applications of the technology is in the fabrication of an integrated dispenser cathode assembly. This application requires the deposition of a boron nitridemolybdenum composite structure. In order to realize this structure, work was done to improve the control and understanding of the LCVD process and to determine experimental conditions conducive to the growth of the required materials. A series of carbon fiber and line deposition studies were used to characterize processshape relationships and study the kinetics of carbon LCVD. These studies provided a foundation for the fabrication of the first high aspect ratio multilayered LCVD wall structures. The kinetics studies enabled the formulation of an advanced computational model in the FLUENT CFD package for studying energy transport, mass and momentum transport, and species transport within a forced flow LCVD environment. The model was applied to two different material systems and used to quantify deposition rates and identify ratelimiting regimes. A computational thermalstructural model was also developed using the ANSYS software package to study the thermal stress state within an LCVD deposit during growth. Georgia Techs LCVD system was modified and used to characterize both boron nitride and molybdenum deposition independently. The focus was on understanding the relations among process parameters and deposit shape. Boron nitride was deposited using a B3N3H6-N2 mixture and growth was characterized by sporadic nucleation followed by rapid bulk growth. Molybdenum was deposited from the MoCl5-H2 system and showed slow, but stable growth. Each material was used to grow both fibers and lines. The fabrication of a boron nitridemolybdenum composite was also demonstrated. In sum, this work served to both advance the general science of Laser Chemical Vapor Deposition and to elucidate the practicality of fabricating ceramicmetal composites using the process.

Cette thèse décrit des expériences sur la synthèse de nanotubes de carbone (CNT) mono-paroi, leur intégration dans des dispositifs ultra-propres, ainsi que l'étude de leurs propriétés électroniques par des mesures de transport à très basse température. La première partie de ce travail décrit l'optimisation des paramètres de synthèse par déposition chimique en phase vapeur (CVD) tels que les précurseurs de carbone, les flux de gaz, la température, ou le catalyseur pour la croissance de CNT de très bonne qualité. Parmis tous ces paramètres, la composition du catalyseur joue un rôle decisif pour permettre une croissance sélective en mono-paroi ansi qu'une distribution de faible diamètre. Dans la deuxième partie nous développons la nanofabrication de boites quantiques ultra-propres à base de CNT ainsi que les mesures de transport de ces échantillons à basse température (40 mK). Le spectre de la première couche électronique du nanotube est mesuré par spectroscopie de cotunneling inélastique sous champ magnétique, montrant alors un fort couplage spin-orbite négatif, dans ce système. Nous montrons que la séquence de remplissage d'électrons dans notre cas (ΔSO < 0) est différente de celle que l'on obtiendrait en régime Kondo SU (4) (ΔSO = 0). En effet, un effet Kondo purement orbital est observé pour N =2e à champ magnétique fini. Dans la dernière partie de cette thèse, nous décrivons la mise en œuvre expérimentale d'un évaporateur thermique à aimants à molécule unique (SMM) pour la fabrication future de dispositifs hybrides CNT-SMM ultra-propres
This thesis describes experiments on the synthesis of single wall carbon nanotubes (SWNTs), fabrication of ultra-clean CNT devices, and study of electronic properties of CNTs with transport measurements. The first part of this work describes the optimization of the synthesis parameters (by chemical vapor deposition - CVD) such as carbon precursor, gas flows, temperature, catalyst for the growth of high quality SWNTs. In all these parameters, the catalyst composition plays a very important role on the high selective growth of SWNTs with a narrow diameter distribution. The second part deals with the nanofabrication of ultra-clean CNT devices and the low temperature (40 mK) transport measurements of these CNT quantum dots. The level spectra of the electrons in the first shell are investigated using inelastic cotunneling spectroscopy in an axial magnetic field, which shows a strong negative spin-orbit coupling of electron. We find that the sequence of electron shell filling in our case (ΔSO < 0) is different from which would be obtained in the pure SU(4) Kondo regime (ΔSO = 0). Indeed, a pure orbital Kondo effect is observed in N=2e at a finite magnetic field. In the last part of this thesis, we describe the experimental implementation of the thermal evaporation of single-molecule magnet (SMM) for the future fabrication of ultra-clean CNT-SMM hybrid devices

To fulfill the potential of carbon nanotube (CNT) as thermal interface material (TIM), the packing density of CNT array needs improvement. In this work, two potential ways to increase the packing density of CNT array are tested. They are liquid precursor(LP)CVD and cycled catalyst deposition method. Although LP-CVD turned out to be no help for packing density increase, it is proved to enhance the CNT growth rate. The packing density of CNT array indeed increases with the cycle number. The thermal conductivity of the CNT array increases with the packing density. This work is believed to be a step closer to the real life application of CNT in electronic packaging industry.

This thesis is devoted to the fabrication of carbon nanotube structures for microelectronics packaging applications with an emphasis on fundamental studies of nanotube growth and assembly, wetting of nanotube structures, and nanotube-based composites. A CVD process is developed that allows controlled growth of a variety of CNT structures, such as CNT films, bundles, and stacks. Use of an Al2O3 support enhances the Fe catalyst activity by increasing the CNT growth rate by nearly two orders of magnitude under the same growth conditions. By introducing a trace amount of weak oxidants into the CVD chamber during CNT growth, aligned CNT ends can be opened and/or functionalized, depending on the selection of oxidants. By varying the growth temperature, CNT growth can be performed in a gas diffusion- or kinetics-controlled regime. To overcome the challenges that impede implementation of CNTs in circuitry, a CNT transfer process was proposed to assemble aligned CNT structures (films, stacks &bundles) at low temperature which ensures compatibility with current microelectronics fabrication sequences and technology. Field emission and electrical testing of the as-assembled CNT devices indicate good electrical contact between CNTs and solder and a very low contact resistance across CNT/solder interfaces. For attachment of CNTs and other applications (e.g. composites), wetting of nanotube structures was studied. Two model surfaces with two-tier scale roughness were fabricated by controlled growth of CNT arrays followed by coating with fluorocarbon layers formed by plasma polymerization to study roughness geometric effects on superhydrophobicity. Due to the hydrophobicity of nanotube structures, electrowetting was investigated to reduce the hydrophobicity of aligned CNTs by controllably reducing the interfacial tension between carbon nanotubes (CNTs) and liquids. Electrowetting can greatly reduce the contact angle of liquids on the surfaces of aligned CNT films. However, contact angle saturation still occurs. Variable frequency microwave (VFM) radiation can greatly improve the CNT/epoxy interfacial bonding strength. Compared to composites cured by thermal heating, VFM-cured composites demonstrate higher CNT/matrix interfacial bonding strength, which is reflected in composite negative thermal expansion. The improved CNT/epoxy interface enhances the thermal conductivity of the composites by 26-30%.

Le graphène est une simple couche de nid d'abeille motifs atomes de carbone. Il a suscité beaucoup d'intérêt dans la dernière décennie en raison de ses excellentes propriétés électroniques, optiques et mécaniques, etc., et montre larges perspectives d'applications dans le futur. Parfois, les propriétés du graphène doivent être modulées pour s’adapter à des applications spécifiques. Par exemple, le contrôle du niveau de dopage fournit un bon moyen de moduler les propriétés électriques et magnétiques de graphène, qui est important pour la conception de dispositifs de mémoire et de logique à base de graphène. En outre, la possibilité de régler la conductance électrique peut être utilisée pour fabriquer le transistor de graphène, et le dépôt chimique en phase vapeur (CVD) Procédé montre la possibilité d'effectuer la préparation de graphène intégrées dans les processus de fabrication de semi-conducteur. L'injection de spin et l'irradiation sont méthodes efficaces et pratiques pour adapter les propriétés de transport du graphène. Mais en raison du processus de fabrication complexe, il est difficile de préparer le dispositif de transport de spin graphène succès. La lithographie et décoller les processus qui impliquent utilisant résine photosensible va dégénérer les propriétés de transport du graphène. En outre, la sensibilité du graphène aux molécules H2O et O2 lorsqu'il est exposé à l’air ambiant entraînera faible signal de rotation et le bruit de fond. L'irradiation fournit une méthode propre à moduler les propriétés électriques de graphène qui n’impliquent pas de traitement chimique. En ions ou irradiation d'électrons, la structure de bande électronique de graphène peut être réglé et la structure en treillis est modulé aussi bien. En outre, les impuretés chargées et dopage résultant de l'irradiation peuvent modifier les propriétés électroniques du graphène comme la diffusion électron-phonon, libre parcours moyen et la densité de support. Comme indiqué, le graphène oxydation peut être induite par exposition à un plasma d'oxygène, et le N- dopage de graphène par recuit thermique dans de l'ammoniac a été démontré. En outre, la souche dans le graphène peut également être adaptée par irradiation, qui contribue également à la modification des propriétés de transport de graphène. En conclusion, l'irradiation fournit une méthode physique efficace pour moduler les propriétés structurelles et de transport de graphène, qui peuvent être appliqués dans la mémoire à base de graphène et des dispositifs logiques, transistor, et des circuits intégrés. Dans cette thèse, l'irradiation d'ions hélium a été réalisée sur le graphène cultivé sur substrat SiO2 par la méthode CVD, et les propriétés structurelles et de transport ont été étudiés. Le dopage de transfert de charge dans le graphène induite par les résultats d'irradiation dans une modification de ces propriétés, qui suggère une méthode pratique pour les adapter. En outre, l'irradiation par faisceau d'électrons a été effectuée sur graphène cultivé sur substrat de SiC. Les amorphisations progressives, contraintes et d'électrons dopage locales contribuent à la modification des propriétés structurelles et de transport dans le graphène qui peuvent être observés
Graphene is a single layer of honeycomb patterned carbon atoms. It has attracted much of interest in the past decade due to its excellent electronic, optical, and mechanical properties, etc., and shows broad application prospects in the future. Sometimes the properties of graphene need to be modulated to adapt for specific applications. For example, control of doping level provides a good way to modulate the electrical and magnetic properties of graphene, which is important to the design of graphene-based memory and logic devices. Also, the ability to tune the electrical conductance can be used to fabricate graphene transistor, and the chemical vapor deposition (CVD) method shows the possibility to make the preparation of graphene integrated into semiconductor manufacture processes. Moreover, the sensitivity of graphene to the H2O and O2 molecules when exposed to the air ambient will result in weak spin signal and noise background. Irradiation provides a clean method to modulate the electrical properties of graphene which does not involve chemical treatment. By ion or electron irradiation, the electronic band structure of graphene can be tuned and the lattice structure will be modulated as well. Moreover, the charged impurities and doping arising from irradiation can change the electronic properties of graphene such as electron-phonon scattering, mean free path and carrier density. As reported, graphene oxidization can be induced by exposure to oxygen plasma, and N-Doping of Graphene through thermal annealing in ammonia has been demonstrated. Furthermore, the strain in graphene can also be tailored by irradiation, which also contributes to the modification of transport properties of graphene. In conclusion, irradiation provides an efficient physical method to modulate the structural and transport properties of graphene, which can be applied in the graphene-based memory and logic devices, transistor, and integrated circuits (ICs). In this thesis, Helium ion irradiation was performed on graphene grown on SiO2 substrate by CVD method, and the structural and transport properties were investigated. The charge transfer doping in graphene induced by irradiation results in a modification of these properties, which suggests a convenient method to tailor them. Moreover, electron beam irradiation was performed on graphene grown on SiC substrate. The local progressive amorphization, strain and electron doping contribute to the modification of structural and transport properties in graphene which can be observed

This thesis comprises detailed experimental and theoretical investigations of the transport properties of one-dimensional nanostructures. Most of the work is dedicated to the exploration of the fascinating effects occurring in single wall carbon nanotubes (SWCNT). These particular nanostructures gained an overwhelming interest in the past two decades due to its outstanding electronic and mechanical features. We have investigated the properties of a novel family of carbon nanostructures, named here as Y-shaped rings. The studies show that they present very interesting quantum interference effects. A high structural stability under tensile strain and elevated temperatures is observed. Within the semi-classical potential adopted, the critical strain values of structure rupture lie in the same range of their pristine SWCNT counterparts. This is directly verified by the first observations of these ring-like structures in a transmission electron microscopy. A merging process of asymmetric into symmetric rings is investigated in-situ under electron beam irradiation at high temperatures. The electronic properties of these systems are theoretically studied using Monte Carlo simulations and environment dependent tight-binding calculations. From our results, we address the possibility of double-slit like interference processes of counter-propagating electron waves in the ring-like structures. The nature of well defined, sharp peaks in the density of states are determined as the discrete eigenenergies of the central loop part. Furthermore, the formation and dispersion of standing waves inside the ring is shown to originate from the quantum-dot like confinement of each branch between the leads. The obtained dispersion relation is shown to be the same occurring in purely one-dimensional quantum dots of similar geometries. Furthermore, Fabry-Perot-like interferences are observed. We established at the IFW a bottom-up processing route to fabricate nanotube based electronic devices. The SWCNTs are grown by chemical vapor deposition and we present a detailed study of the different approaches to obtain individual nanotubes suitable for a successful integration into electronic devices. Wet-chemistry and ultra-thin films as well as ferritin were employed as catalyst particles in the growth of SWCNT samples. By adjusting the optimized process parameters, we can control the obtained yield from thick nanotube forests down to just a couple of free-standing individual SWCNTs. The nanotubes are localized, contacted by standard e-beam lithography and characterized at ambient- as well as liquid helium temperatures. We usually obtain quite transparent contacts and the devices exhibit metallic or a mixed metallic/semiconducting behavior. The well-known memory effect upon gate voltage sweeping as well as single electron tunneling in the Coulomb blockade regime are addressed.

Le cycle des composes de l'hydrogene dans la stratosphere et la mesosphere est etudie a l'aide d'un modele numerique 2d. La premiere partie est consacree a l'etude du bilan de la vapeur d'eau, avec un traitement detaille de sa production par l'oxydation du methane et de l'hydrogene moleculaire. Dans la seconde partie, le mecanisme photochimique et la variabilite saisonniere de l'emission mesospherique de oh dans les bandes de meinel sont abordes d'un point de vue theorique

Etude des proprietes electriques et optiques a basse temperature dans inp de haute purete. Observation de l'effet hall quantique par etude detaillee de proprietes de transport des porteurs bidimensionnels a l'heterojoncion, a dopage module de type p ou n dans inp/ga::(0,47) in::(0,53) as et inp/ga::(0,25) in::(0,75) as::(0,5) p::(0,5). Etude des proprietes structurelles et optiques des puits quantiques multiples inp/ga::(0,47) in::(0,53) as

En utilisant une démarche de type "Chimie du Solide", le rôle des principaux facteurs caractérisant la surface du substrat (composition chimique, structure et liaisons chimiques) sur la germination de cristallites de diamant, ainsi que leur morphologie, a ete mis en évidence. La densité de nucléation et le rapport Csp2/Csp3 ont pu notamment etre corrélés a la diffusion du carbone dans le substrat. Afin de contrôler celle-ci, des couches superficielles de composes covalents tels que les nitrures et les borures ont été utilisées. Elles ont permis d'atteindre des densités très importantes de nucléi de diamant pour des temps de dépôt relativement courts. L'ensemble des résultats concernant le dépôt par hétéroépitaxie du diamant a permis de proposer une méthodologie au niveau du choix du substrat et des espèces réactives pour l'obtention de couches minces de nitrure de bore cubique.

(ULSI) causes an increase of the resistance of the wiring system by increased scattering of electrons at side walls and grain boundaries in the state of the art Cu technology, which increases the RC delay of the interconnect system and thus degrades the performance of the device. The outstanding properties of carbon nanotubes (CNT) such as a large mean free path, a high thermal conductance and a large resistance against electromigration make them an ideal candidate to replace Cu in future feature nodes. The present thesis contributes to the preparation and properties of CNT based vertical interconnections (vias). In addition, all processes applied during the fabrication are compatible to ULSI and an interface between CNT based vias and a Cu metallization is studied. The methodology for the evaluation of CNT based vias is improved; it is highlighted that by measuring the resistance of one multiwall CNT and taking into account the CNT density, the performance of the CNT based vias can be predicted accurately. This provides the means for a systematic evaluation of different integration procedures and materials. The lowest contact resistance is obtained for carbide forming metals, as long as oxidation during the integration is avoided. Even though metal-nitrides exhibit an enhanced contact resistance, they are recommended to be used at the bottom metallization in order to minimize the oxidation of the metal-CNT contact during subsequent processing steps. Overall a ranking for the materials from the lowest to the highest contact resistance is obtained: Ta < Ti < TaN < TiN « TiO2 « Ta2O5 Furthermore the impact of post CNT growth procedures as chemical mechanical planarization, HF treatment and annealing procedures after the CNT based via fabrication are evaluated. The conductance of the incorporated CNTs and the applicable electrical transport regime relative to the CNT quality and the CNT length is discussed. In addition, a strong correlation between the temperature coefficient of resistance and the initial resistance of the CNT based vias at room temperature has been observed
Die kontinuierliche Miniaturisierung der charakteristischen Abmessungen in hochintegrierten Schaltungen (ULSI) verursacht einen Anstieg des Widerstandes im Zuleitungssystem aufgrund der erhöhten Streuung von Elektronen an Seitenwänden und Korngrenzen in der Cu-Technologie, wodurch die Verzögerungszeit des Zuleitungssystems ansteigt. Die herausragenden Eigenschaften von Kohlenstoffnanoröhren (CNT), wie eine große mittlere freie Weglänge, hohe thermische Leitfähigkeit und eine starke Resistenz gegenüber Elektromigration machen diese zu einem idealen Kandidaten, um Cu in zukünftigen Technologiegenerationen zu ersetzen. Die vorliegende Arbeit beschreibt die Herstellung und daraus resultierenden Eigenschaften von Zwischenebenenkontakten (Vias) basierend auf CNTs. Alle verwendeten Prozessierungsschritte sind kompatibel mit der Herstellung von hochintegrierten Schaltkreisen und eine Schnittstelle zwischen den CNT Vias und einer Cu-Metallisierung ist vorhanden. Insbesondere das Verfahren zur Evaluierung von CNT Vias wurde durch den Einsatz verschiedener Methoden verbessert. Insbesondere soll hervorgehoben werden, dass durch die Messung des Widerstandes eines einzelnen CNTs, bei bekannter CNT Dichte, der Via Widerstand sehr genau vorausgesagt werden kann. Dies ermöglicht eine systematische Untersuchung des Einflusses der verschiedenen Prozessschritte und der darin verwendeten Materialien auf den Via Widerstand. Der niedrigste Kontaktwiderstand wird für Karbidformierende Metalle erreicht, solange Oxidationsprozesse ausgeschlossen werden können. Obwohl Metallnitride einen höheren Kontaktwiderstand aufweisen, sind diese für die Unterseitenmetallisierung zu empfehlen, da dadurch die Oxidation der leitfähigen Schicht minimiert wird. Insgesamt kann eine Reihenfolge beginnend mit dem niedrigsten zum höchsten Kontaktwiderstand aufgestellt werden: Ta < Ti < TaN < TiN « TiO2 « Ta2O5 Desweiteren wurde der Einfluss von Verfahren nach dem CNTWachstum wie die chemischmechanische Planarisierung, eine HF Behandlung und einer Temperaturbehandlung evaluiert, sowie deren Einfluss auf die elektrischen Parameter des Vias untersucht. Die Leitfähigkeit der integrierten CNTs und die daraus resultierenden elektrischen Transporteigenschaften in Abhängigkeit der CNT Qualität und Länge werden besprochen. Ebenso wird die starke Korrelation zwischen dem Temperaturkoeffizienten des elektrischen Widerstandes und des Ausgangswiderstandes der CNT basierten Vias bei Raumtemperatur diskutiert

(ULSI) causes an increase of the resistance of the wiring system by increased scattering of electrons at side walls and grain boundaries in the state of the art Cu technology, which increases the RC delay of the interconnect system and thus degrades the performance of the device. The outstanding properties of carbon nanotubes (CNT) such as a large mean free path, a high thermal conductance and a large resistance against electromigration make them an ideal candidate to replace Cu in future feature nodes. The present thesis contributes to the preparation and properties of CNT based vertical interconnections (vias). In addition, all processes applied during the fabrication are compatible to ULSI and an interface between CNT based vias and a Cu metallization is studied. The methodology for the evaluation of CNT based vias is improved; it is highlighted that by measuring the resistance of one multiwall CNT and taking into account the CNT density, the performance of the CNT based vias can be predicted accurately. This provides the means for a systematic evaluation of different integration procedures and materials. The lowest contact resistance is obtained for carbide forming metals, as long as oxidation during the integration is avoided. Even though metal-nitrides exhibit an enhanced contact resistance, they are recommended to be used at the bottom metallization in order to minimize the oxidation of the metal-CNT contact during subsequent processing steps. Overall a ranking for the materials from the lowest to the highest contact resistance is obtained: Ta < Ti < TaN < TiN « TiO2 « Ta2O5 Furthermore the impact of post CNT growth procedures as chemical mechanical planarization, HF treatment and annealing procedures after the CNT based via fabrication are evaluated. The conductance of the incorporated CNTs and the applicable electrical transport regime relative to the CNT quality and the CNT length is discussed. In addition, a strong correlation between the temperature coefficient of resistance and the initial resistance of the CNT based vias at room temperature has been observed.
Die kontinuierliche Miniaturisierung der charakteristischen Abmessungen in hochintegrierten Schaltungen (ULSI) verursacht einen Anstieg des Widerstandes im Zuleitungssystem aufgrund der erhöhten Streuung von Elektronen an Seitenwänden und Korngrenzen in der Cu-Technologie, wodurch die Verzögerungszeit des Zuleitungssystems ansteigt. Die herausragenden Eigenschaften von Kohlenstoffnanoröhren (CNT), wie eine große mittlere freie Weglänge, hohe thermische Leitfähigkeit und eine starke Resistenz gegenüber Elektromigration machen diese zu einem idealen Kandidaten, um Cu in zukünftigen Technologiegenerationen zu ersetzen. Die vorliegende Arbeit beschreibt die Herstellung und daraus resultierenden Eigenschaften von Zwischenebenenkontakten (Vias) basierend auf CNTs. Alle verwendeten Prozessierungsschritte sind kompatibel mit der Herstellung von hochintegrierten Schaltkreisen und eine Schnittstelle zwischen den CNT Vias und einer Cu-Metallisierung ist vorhanden. Insbesondere das Verfahren zur Evaluierung von CNT Vias wurde durch den Einsatz verschiedener Methoden verbessert. Insbesondere soll hervorgehoben werden, dass durch die Messung des Widerstandes eines einzelnen CNTs, bei bekannter CNT Dichte, der Via Widerstand sehr genau vorausgesagt werden kann. Dies ermöglicht eine systematische Untersuchung des Einflusses der verschiedenen Prozessschritte und der darin verwendeten Materialien auf den Via Widerstand. Der niedrigste Kontaktwiderstand wird für Karbidformierende Metalle erreicht, solange Oxidationsprozesse ausgeschlossen werden können. Obwohl Metallnitride einen höheren Kontaktwiderstand aufweisen, sind diese für die Unterseitenmetallisierung zu empfehlen, da dadurch die Oxidation der leitfähigen Schicht minimiert wird. Insgesamt kann eine Reihenfolge beginnend mit dem niedrigsten zum höchsten Kontaktwiderstand aufgestellt werden: Ta < Ti < TaN < TiN « TiO2 « Ta2O5 Desweiteren wurde der Einfluss von Verfahren nach dem CNTWachstum wie die chemischmechanische Planarisierung, eine HF Behandlung und einer Temperaturbehandlung evaluiert, sowie deren Einfluss auf die elektrischen Parameter des Vias untersucht. Die Leitfähigkeit der integrierten CNTs und die daraus resultierenden elektrischen Transporteigenschaften in Abhängigkeit der CNT Qualität und Länge werden besprochen. Ebenso wird die starke Korrelation zwischen dem Temperaturkoeffizienten des elektrischen Widerstandes und des Ausgangswiderstandes der CNT basierten Vias bei Raumtemperatur diskutiert.

Metalorganic Chemical Vapour Deposition (MOCVD) is a versatile technique for the deposition of thin films of oxide materials as it offers advantages, such as deposition over large surface area, conformal coverage, selective area deposition, and a high degree of compositional control. The MOCVD process uses metalorganic (MO) complexes, such as β-diketonate and alkoxide-based complexes, as precursors. These complexes are stable and moderately volatile. Because of the direct bond between metal and oxygen, MO complexes are natural precursors for oxide coatings. As the process involves chemical reactions taking place on the substrate surface, growth of thin films by MOCVD depends on various parameters such as the chemical nature and concentration of precursors, reaction pressure, reaction temperature, and the nature of the substrate. Such a large parameter space of the CVD process, when combined with the dynamics (thermodynamics and fluid dynamics) and kinetics, makes it rather complex. This complexity allows one to make thin films of metastable phases, including amorphous materials. One of the important findings of the work is that MOCVD process is capable of making composite coatings of carbonaceous metal oxide. Manganese is multivalent and forms various stable oxides, such as MnO, Mn2O3, Mn3O4 and MnO2. There are various potential applications of manganese oxides. MnO2 is a very well studied material for its electrochemical applications in dry cells, lithium-ion batteries, and in supercapacitors. Hence, it becomes pertinent to explore the properties of thin films of manganese oxides prepared by MOCVD for various electrochemical and other applications. The thesis work is divided into two parts. Part 1 describes the synthesis of manganese complexes, their characterization, and their application to the CVD of coatings, especially those of carbonaceous MnO. Part 2 is devoted to a detailed study of electrochemical aspects of the carbonaceous MnO coatings, followed by a report on their unusual transport properties. Chapter 1 begins with a brief introduction to thin film deposition processes. In particular, the CVD process is described with reference to various parameters such as carrier gas flow, pressure, temperature and most importantly, the CVD precursor. The chapter ends with a description of the scope of the work undertaken for the present thesis. Chapter 2 deals with “Synthesis and Characterization of MO complexes”. It begins with a description of the classification of CVD precursors with the description of MO complexes such as β-diketonates, which are generally subliming crystalline solids. Manganese β-diketonate complexes are discussed in detail. Due to the multivalent nature of Mn, there are two possible complexes namely Mn(acac)2(H2O)2 and Mn(acac)3. These complexes have been synthesised and characterized (confirmed) by various techniques, such as elemental analysis (CHN), X-ray diffraction (XRD), FTIR spectroscopy, and mass spectroscopy. Thermal analysis of the complexes shows that they are suitable as MOCVD precursors. We have used Mn(acac)2(H2O)2 as a precursor in the present work. Metalorganic complexes, where metal ion is directly bonded with both nitrogen and oxygen, can be potential candidates for the precursor for oxynitrides coatings. We have therefore studied solid crystalline anthranilate complexes of various metal ions, such as Mn2+, Co2+, Cu2+ and Zn2+ and confirmed their formation. Thermal analysis shows that anthranilate complexes are fairly volatile below 250oC and decompose below 500oC. These complexes were pyrolysed in open air and in sealed tube at different temperatures, and the resulting powder product examined by XRD, SEM, EDAX and FTIR. This preliminary study shows that anthranilate complexes yield different oxides of Mn, Co and Cu under different pyrolysis conditions, with very interesting morphological features. Pyrolysis of Zn(aa)2 in a sealed tube leads to the formation of a nanocomposite of carbon and zinc oxide (wuerzite), rich in carbon, with potential for applications in catalysis. On the other hand, the pyrolysis of Zn(aa)2 in air at the same temperature leads to leads to crystalline, nanostructured zinc oxide (wuerzite). However, no attempt has been made to use these anthranilates as CVD precursors. Chapter 3 deals with “MOCVD of Manganese Oxides and their Characterization”. It begins with a brief review of various manganese oxides and their properties. This is followed by description of the CVD reactor used for the present work, together with the conditions employed for the deposition of MnOx films. Depositions have been carried out on different substrates such as SS-316, ceramic alumina and Si (111), while varying various deposition parameters, viz., substrate, reactor pressure, carrier gas (argon) flow rate, and the duration of deposition. Significantly, depositions are divided into two categories: one, carried out in argon ambient, in the absence of a supply of oxygen (or any other oxidant) and the second one, under oxygen flow, using argon as carrier gas. The films deposited in the absence of oxygen flow are thick, black in colour, and electrically conducting, indicating the presence of carbon. The growth rate follows a typical thermal pattern, with activation energy of ~ 1.7 eV. Detailed characterization by XRD, TEM/ED, Raman, FTIR and XPS (X-ray photoelectron spectroscopy) shows that these films are composed of MnO in a carbon-rich amorphous matrix. High-resolution SEM (fig. 1) reveals a fractal pattern of cauliflower morphology, comprising very fine particles (4 – 10 nm), characteristic of very large specific surface area of the film, which is confirmed by volumetric BET measurement (~2000 m2/g). We conclude that growth in argon ambient leads to a homogenous nanocomposite film of hydrated MnO in carbon-rich matrix. Thus, our study reveals that MOCVD is a novel one-step chemical method to produce homogenous composite thin films, wherein all components of the nanocomposite film emerge from the same chemical precursor. Carbon incorporation is generally avoided by empirical process design, as it is viewed as an impurity. The potential advantages of carbon incorporation are thus not examined and the composite nature of carbonaceous films not recognized in the literature. Carbonaceous nanocomposite film can be significant as an electrode in supercapacitors, as discussed in part 2 of the thesis. Chapter 3 describes films deposited under oxygen flow, which are no longer black and are highly resistive, indicating the absence of carbon in the film, as confirmed by Raman spectroscopy. XRD, FTIR and Raman spectroscopy reveal that the films obtained under oxygen flow are more crystalline than the ones obtained in the absence of oxygen flow, and that the films are generally nanocrystalline composites of two manganese oxides, such as MnO and Mn3O4. Given the context of the carbonaceous MnO films described above, chapter 4 begins with a review of electrochemical capacitors (also called supercapacitors or ultracapacitors), which are emerging as important energy storage devices. Until now, in the Mn-O system, hydrated MnO2 has been well-studied as an electrode material due to its low cost and environmental compatibility, but the low electrical conductivity of MnO2, together with irreversible redox reactions, reduces its performance. In electrochemical capacitor applications, metal-oxide/carbon composites are finding importance. Chapter 4 deals with “MnO/C Nanocomposite Coatings as Electrodes for Electrochemical Capacitor”. In this chapter, we have examined the novel EM, i.e., the hydrated MnO/C nanocomposite coating prepared by the MOCVD process on a conducting substrate (current collector) such as SS-316 as an electrode. Electrochemical measurements have been carried out for both the 3-electrode assembly (for basic aqueous electrolyte) and 2-electrode assembly (for gel polymer electrolyte) using cyclic voltammetry (CV), AC impedance and charge-discharge techniques. The studies lead to a maximum specific capacitance of 230 – 270 F/g at 1 mA/cm2 discharge current density for the MnO/C nanocomposite coating grown at 680oC. The Bode plot shows a maximum phase angle of around 74 – 82o, indicating capacitive behaviour. The MnO/C nanocomposite film shows a very small time constant (0.5 – 3 msec), which is good for high frequency applications. The pulse power figure of merit is found to be 650 – 2000 W/g. Capacitance determined for a large number of charge-discharge cycles (~20000), and at large current densities (50 mA/cm2) show promising results. The energy density (5 - 32 Wh/kg) and power density (2 – 4 kW/kg) estimated from charge-discharge data at 1 mA/cm2 shows the potential of the nanocomposite MnO/C as electrode for superior capacitor devices. Gel polymer electrolytes (GPE) offer the advantage of large electrochemical potential window due to its structural and chemical stability. Studies have been carried out to show that the MnO/C nanocomposite film is compatible with gel polymer electrolytes based on poly(methyl methacrylate) (PMMA) and poly(acrylonitrile) (PAN) with salts of magnesium triflate and magnesium perchlorate, respectively) and plasticizers (ethylene carbonate (EC) + propylene carbonate (PC)), in a 2-electrode assembly. Chapter 5 deals with “Magnetoconductance in MnO/C Nanocomposite Coatings on Alumina”. Amorphous systems, such as MnO/C composites wherein carbon is amorphous and MnO is nearly so, are highly symmetric condensed phases, which do not possess long range translational or orientational order. Disorder in the system creates Anderson localized states just above the valence band, which lead to reduced electrical conductivity. Amorphous systems show either a small negative magnetoresistance (~ 5%) or a small positive magnetoconductance (~ 7%) at very low temperatures (~ 10 K). As such, the transport properties of the MnO/C nanocomposite film have been investigated, and are reported in chapter 5. Transport and magnetotransport measurements have been made on the MnO/C nanocomposite film grown on alumina. It is found that the MnO/C nanocomposite coating exhibits a giant negative MR (22.3%) at a temperature as high as 100 K, which is unusual because pure MnO is anti-ferromagnetic and does not ordinarily show any magnetoresistance (MR), while amorphous carbon is known to show a small MR at very low temperatures (~7 K), due to weak-localization. The present results mean that a mechanism other than weak-localization plays a role in this nanocomposite material. Further study of this material is called for, which can perhaps lead to giant magnetoresistance (GMR) at room temperature in a metal-oxide/carbon nanocomposite. A summary of the work and an outlook for further research are given in the concluding chapter 6.

With the advent of microelectronics and micromechanical systems, the benefits of miniaturized technology became evident. With the discovery of carbon nanotubes by Iijima in 1991, a material has been found that offers superior porperties such as high tensile strength, excellent electrical and heat conductivity while being lightweight, flexible and tunable by the specific atomic arrangement in its structure. The first part of this thesis deals with a new synthesis approach, which combines the known routes of chemical vapour deposition and laser ablation. The results concerning diameter and yield fit well within an established model for the nucleation and growth of carbon nanotubes and extend it by considering a larger parameter space. Furthermore, conventional laser ablation has been used to synthesize C-13 augmented carbon nanotubes, whose diameters depend among the usual synthesis parameters also on the C-13 content, an influence which is in line with the changed thermal conductivities of isotope mixtures. Manipulation of carbon nanotubes inside a transmission electron microscope forms the second part of this thesis. With the help of an in-situ nanomanipulator, several experiments involving the mechanical and electrical properties of carbon nanotubes have been performed. Two-probe resistances of individual nanotubes have been measured and the observation of individual shell failures allowed for the determination of current limits per carbon shell. With the help of electrical current, a nanotube was modified in its electrical characteristics by reshaping its structure. By application of DC-currents or square current pulses, the filling of iron- or cementite-filled multi-wall carbon nanotubes has been found to move in a polarity-defined direction guided by the nanotube walls. Depending on the current, nanotube shape, and composition of the filling different regimes of material transport have been identified, including the reworking of the inner nanotube shells. The application of a high driving current leads to a complete reworking of the host nanotube and the current-induced growth of carbonaceous nanostructures of changed morphology. Utilizing the obtained results, a transport mechanism involving momentum transfer from the electron wind to the filling atoms and a solid filling core during transport is developed and discussed. Finally, measurements of mechanical properties using electrically induced resonant or non-resonant vibrations inside the transmission electron microscope have been observed and important mechanical parameters have been determined with the help of a modified Euler-Bernoulli-beam approach.
Mit dem Aufkommen von Mikroelektronik und mikromechanischen Systemen wurden die Vorteile miniaturisierter Geräte augenscheinlich. Mit der Entdeckung von Kohlenstoff-Nanoröhren durch Iijima 1991 wurde ein Material gefunden, welches überlegene Eigenschaften wie hohe Festigkeit, exzellente elektrische und Wärmeleitfähigkeit zeigt, während es zeitgleich leicht und flexibel ist. Diese Eigentschaften können durch eine Änderung der spezifischen atomaren Anordnung in der Nanoröhrenhülle beeinflusst werden. Der erste Teil dieser Dissertationsschrift behandelt einen neuartigen Syntheseansatz, welche die bekannten Syntheserouten der chemischen Gasphasenabscheidung und Laserablation kombiniert. Die Ergebnisse bezüglich des Durchmessers und der Ausbeute lassen sich gut mit einem etablierten Modell der Nukleation und des Wachstums von Kohlenstoff-Nanoröhren beschreiben - sie erweitern es, indem sie einen größeren Parameterraum berücksichtigen. Des Weiteren wurde konventionelle Laserablation benutzt, um C-13 angereicherte Kohlenstoff-Nanoröhren herzustellen, deren Durchmesser nicht nur von den üblichen Parametern, sondern auch vom C-13 Anteil abhängt. Diese Abhängigkeit geht mit der veränderten thermischen Leitfähigkeit von Isotopenmischungen einher. Die Manipulation von Kohlenstoff-Nanoröhren in einem Transmission-Elektronenmikroskop formt den zweiten Teil der Dissertationschrift. Mit Hilfe eines in-situ Manipulators wurden vielfältige Experimente durchgeführt, um die mechanischen und elektrischen Eigenschaften der Kohlenstoff-Nanoröhren zu bestimmen. Zweipunktmessungen des Widerstands einzelner Nanoröhren und die Beobachtung des Versagens einzelner Kohlenstoffschichten erlaubte die Bestimmung der Stromtragfähigkeit einzelner Hüllen. Mit Hilfe eines elektrischen Stromes konnte eine Nanoröhre durch die veränderung der Struktur in ihren elektrischen Eigenschaften verändert werden. Unter Verwendung dauerhaften oder gepulsten Gleichstroms konnte die Eisen- oder Zementit-Füllung der Kohlenstoff-Nanoröhren in eine polaritätsabhängige Richtung bewegt werden. Die Füllung wurde dabei durch die Wände der Nanoröhre geführt. Abhängig von Strom, Form der Nanoröhre und Zusammensetzung der Füllung ließen sich verschiedene Bereiche des Materialtransports identifizieren, u.a. das Umarbeiten einiger innerer Kohlenstoffschichten. Ein hoher Strom hingegen bewirkt eine Umarbeitung der kompletten Nanoröhre und strominduziertes Wachstum von Kohlenstoff-Nanostrukturen mit veränderter Morphologie. Mit Hilfe der gewonnenen Resultate wurde ein Transportmodell entwickelt, welches den Impulstransfer von Elektronen an Füllungsatome sowie einen festen Füllungskern während des Transports diskutiert. Messungen der mechanischen Eigenschaften, welche mit Hilfe von resonanter oder nicht-resonanter elektrischer Anregung von Schwingungen im Transmissions-Elektronenmikroskop durchgeführt wurden bilden den Abschluss der Arbeit. Durch die Beobachtungen konnten mit einem modifizierten Euler-Bernoulli-Balkenmodell wichtige mechanische Eigenschaften bestimmt werden.

Process development of halide transport chemical vapor deposited (HTCVD) ZnS:Mn thin film has been studied. To this end, electrical characterization of HTCVD ZnS:Mn electroluminescent devices has been used. Process optimization focused on a simple design of experiment (DOE) with brightness as the major response. Deposition parameters such as HCl and H���S gas flow rates, ZnS and Mn source temperatures and substrate temperature were studied. A substrate temperature of 550��C gives the brightest devices. ZnS source temperature and H���S gas flow rate are insignificant parameters according to the statistical analysis. However HCl gas flow rate and Mn source temperature show strong interaction. It is proposed that the incorporation of Cl into the ZnS:Mn film causes the interaction. A Cl defect is also consistent with anomalous electrical behavior observed in the devices. Cl defects are thought to precipitate at the grain boundaries of the initial growth interface, then diffuse (or migrate) along the grain boundaries and possibly into the bulk crystal. This defect will easily form negative charge leading to asymmetric space charge in the bulk of the phosphor. Since the defects are believed to originate from the nucleation of Cl at high grain boundary density, one potential solution is to remove the Cl source as the grains begin to grow and only later expose the film to Cl. While film growth without HCl present at the beginning of deposition leads to brighter films, it is a sub-optimal solution. Part of the ZnS host does not have luminescent centers. It is believed other processing solutions need to be realized to make the HTCVD system viable.
Graduation date: 1999

A low pressure halide transport chemical vapor deposition (HTCVD) system to grow ZnS:Mn electroluminescent phosphors is characterized. Reactor parameters such as gas composition, gas flow rate, and source and substrate temperature are investigated. Crystal structure is investigated using x-ray diffraction, electron spin resonance, and transmission electron microscopy. Chemical characterization includes electron microprobe and Auger electron spectroscopy. Double-insulating alternating current thin film electroluminescent devices are constructed around the HTCVD phosphors. The devices are studied using electroluminescence (brightness-voltage), photoluminescence and electrical characterization. The luminescent properties of films with a (002) preferred orientation are studied. A maximum electroluminescent brightness of 1475 cd/m�� is achieved. The photoluminescence (PL) of ZnS:Mn films grown at different substrate temperatures is compared. The intensity correlates to Mn concentration. Red emission is seen in films grown at lower substrate temperature which have low Mn concentration. Mechanisms proposed in the literature cannot explain the red emission. A blue PL ZnS film intentionally doped with chlorine is achieved. This blue emission is associated with self-activated (SA) emission. Hexagonal and cubic thin-film ZnS:Mn electroluminescent phosphors are grown by HTCVD. Processing conditions, most notably introduction of a H���S ambient, lead to a change in the preferred orientation and phase of the polycrystalline thin film. In addition to the commonly reported growth along the closest packed plane [(111) for cubic crystal structure or (002) for hexagonal], thin films have been grown along the less dense cubic (311) direction. The electrical characterization of ZnS:Mn ACTFEL devices with phosphors having different structure and preferred orientation is studied. A comparison of different preferred orientations and structures on conduction charge, obtained by internal charge-phosphor field (Q-F[subscript]p), is performed. When grown in the (311) direction, the conduction charge of a ZnS:Mn ACTFEL device increases from 2.3 ��C/cm�� to 5.0 ��C/cm��. Moreover, the leakage charge, Q[subscript]l[subscript]e[subscript]a[subscript]k, of the (311) HTCVD films is small compared to other devices.
Graduation date: 1998

碩士
國立交通大學
工學院碩士在職專班精密與自動化工程組
96
Previously pulsed-pressure chemical vapor deposition (PPCVD) process has been demonstrated it could yield highly uniform thin film deposition as compared to conventional thermal chemical vapor deposition process. In addition, very high material conversion efficiency up to 95% was found experimentally. To scale up the process as a practical tool in thin film deposition, detailed understanding of transport phenomena of PPCVD process is stronly required. In this thesis, a parallelized Navier-Stokes equation solver is used to simulate the detailed transient flow structures in a typical PPCVD process during the pump-up process up to 0.1 seconds. Test conditions include fixed upstream stagnation pressure (100,000 Pa) and temperature (300K) and various initial background pressures in the range of 100 through 1,000 Pa. In addition, substrate temperature ranges from 300K to 800K. Very complicated transient flow fields are found inside the PPCVD chamber and discussed wherever are possible. Comments on the validity of using Navier-Stokes equation solver for PPCVD are also presented at the end of the thesis.

Organic thin film transistors (TFTs) based on the field effect transistor architecture provide a methodology for sensing by exhibiting a change in the transport properties such as shifts in mobility, threshold voltage and conductivity. Chemical recognition is achievable by various methods including the two processes, which we are studying, direct analyte interactions with the semiconductor and specific receptor molecules on the semiconducting surface. Previous work demonstrates the effects of carrier concentration, grain size (surface morphology), and channel length on the sensing response to analytes such as alcohols, which exhibit a moderate dipole moment. When the alcohol interacts with the organic channel the addition of a trap and a positive charge occurs at the grain boundaries. At low carrier concentrations the added charge has the effect of producing an increase in current for the sensing response. At higher carrier concentrations the occurrence of trapping overwhelms the effect of the positive charge and you see and reduction in current. Typically the mobility shifts, which occur during sensing are correlated with trapping for polar analytes. The magnitude of the mobility decreases are dependent on the dipole moment of the polar analyte. Another aspect of organic materials is the fine-tuning of the chemical sensitivity by modifying the surface with receptor sites to increase the partition coefficient. In our study we pull the polarization, molecular dipole moment, transport and trapping, and partition coefficient concepts together to produce a model, which describes how an OFET based sensor interacts with an analyte with and without receptor molecules and under aqueous conditions.
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碩士
國立中央大學
電機工程學系
105
Compared to conventional AlGaN/GaN heterostructures, AlInN/GaN heterostructures have higher two-dimensional electron gas (2DEG) concentrations, which result in lower on-resistance of high electron mobility transistors (HEMTs). However, previous reports show that there exist stronger alloy scattering and interface roughness scattering in AlInN heterostructures. These make electron mobility lower than that in AlGaN heterostructures. The use of an AlN spacer to reduce alloy scattering cannot raise the electron mobility to a level comparable to that observed on AlGaN heterostructures. In order to improve the electron mobility of AlInN heterostructures, reducing interface roughness scattering should be of primary interest as well as importance. This study aims to investigate the effects of growth conditions on the smoothness of the heterojunction during metal-organic chemical vapor deposition (MOCVD) so as to improve the electron mobility in AlInN/AlN/GaN heterostructures. H2 is a typical carrier gas used in the growth of GaN by MOCVD. In this study, N2 carrier gas is used during the growth of GaN/AlN heterojunction to suppress the thermal etching by H2, and effectively reduce the interface roughness. The surface roughness of AlN film desreases from 0.88 nm to 0.65 nm. An AlInN/AlN/GaN heterostrure with electron mobility of 1,360 cm2/V-s is achieved with a 2DEG concentration of 2.13×1013 cm-2, leading to a low sheet resistance of 215 ohm/sq. Quantum lifetimes extracted from Shubnikov-de Haas oscillations of the AlInN/AlN/GaN heterostrures growth with H2 and N2 carrier gas indicate that interface roughness scattering is still the dominant scattering mechanism and it is even more significant in the samples with higher 2DEG concentrations.

The first part of this dissertation is an introduction describing a brief historical background of carbon nanotubes (CNTs) and their pseudo 1D structure responsible for many exotic electronic properties. The second part describes our experimental setup. The third part is about the growing of Multi-Walled Carbon Nanotubes (MWCNTs) by the chemical vapor deposition (CVD) method. Then the fourth part demonstrates a simple but reliable method to make firm contact junctions between MWCNTs and metals such as tungsten (W). The novel point of our method consists, after making a mechanical preliminary contact at a selected MWCNT, in applying a series of voltage pulses across the contact. Thin oxide layers that may form between the MWCNT and the W wire, are removed in steps by the resistive heating and electron impact during the application of each voltage pulse. Furthermore, this simple process of contact welding in steps does not bring about any permanent change in the electronic transport properties of the MWCNTs. The fifth part discusses our bending experiments. We apply a uniform and continuous bending to a selected MWCNT at room and liquid nitrogen temperatures to study the strain effect on the electrical transport in the MWCNT. There are a few published experimental works related to the bending deformation; however, this is the first study of electronic transport properties in continuous bending and releasing deformations. We observed a saturation behavior with the MWCNT and also found the bending deformation causing an anomalous change in the saturation behavior. In the sixth part we depict some interesting phenomena due to the stretching deformation of MWCNT, where we were able to propose a simple model for electron localization induced by the deformation. The last part deals with the formation of the "X-junction" between two MWCNTs. A strong X-junction can be formed simply by means of the e-beam inside the Scanning Electron Microscope (SEM). The X-junctions may form the basic elements of nano-electronic circuits such as various metal-insulator junctions, quantum dots, and similar devices.
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In Topologischen Isolatoren (TI) werden metallische Zustände an der Oberfläche beobachtet, während die entsprechenden Volumenzustände eine Bandlücke aufweisen. Der Volumenbeitrag zur Leitfähigkeit von TI-Materialien macht eine Synthese von Nanokristallen bzw. eine Dotierung nötig. Der Fokus der Untersuchungen dieser Arbeit liegt dabei auf der Erzeugung von Nanokristallen der TI-Materialien Bi2Te3- und Bi2Te2Se sowie dotierter Bi2Se3-Nanokristallen. Die Synthese der Nanokristalle erfolgte durch den Gasphasentransport im geschlossenen System über den Mechanismus einer Zersetzungssublimation bzw. unter dem Einsatz eines Transportmittels. Für eine erfolgreiche Erzeugung der Nanokristalle sind im Vorfeld thermodynamische Modellierungen des Gasphasentransports sowie Versuche zum chemischen Transport für die quasibinären Systeme Bi2Se3-Bi2Te3, Bi2Se3-Sb2Se3 und Bi2Se3-FeSe sowie für das ternäre System Mn-Bi-Se durchgeführt worden. Durch Versuche zum chemischen Transport konnten die Aussagen der Modellierung bestätigt und im Weiteren der Dotandengehalt in den abgeschiedenen Kristallen sowie der Einlagerungsmechanismus durch Ergebnisse aus XRD- und ICP-OES-Untersuchungen beschrieben werden. Die Synthese bzw. Dotierung der Nanokristalle wurde hauptsächlich durch die Transportrate und den Dampfdruck des Dotanden bestimmt. In den Systemen Bi2Se3-Bi2Te3 und Bi2Se3-Sb2Se3 ist ein Gasphasentransport über eine Zersetzungssublimation durchführbar und resultierte in einer erfolgreichen Darstellung von Bi2Te3- und Bi2Te2Se-Nanokristallen sowie von dotierten (SbxBi1-x)2Se3-Nanokristallen. Entgegen dessen erfolgte der Gasphasentransport in den Systemen Bi2Se3-FeSe und Mn-Bi-Se unter Verwendung eines Transportmittels. Hierbei verringerten die gesteigerten Transportraten das Wachtum von Nanokristallen. Im Weiteren gelang es dotierte (Fe,Mn)xBi2-xSe3-Volumenkristalle sowie MnBi2Se4-Einkristalle darzustellen und mittels XRD, ICP-OES, magnetischer Messungen sowie elektrischem Transport zu charakterisieren.

abstract: Transition metal di- and tri-halides (TMH) have recently gathered research attention owing to their intrinsic magnetism all the way down to their two-dimensional limit. 2D magnets, despite being a crucial component for realizing van der Waals heterostructures and devices with various functionalities, were not experimentally proven until very recently in 2017. The findings opened up enormous possibilities for studying new quantum states of matter that can enable potential to design spintronic, magnetic memory, data storage, sensing, and topological devices. However, practical applications in modern technologies demand materials with various physical and chemical properties such as electronic, optical, structural, catalytic, magnetic etc., which cannot be found within single material systems. Considering that compositional modifications in 2D systems lead to significant changes in properties due to the high anisotropy inherent to their crystallographic structure, this work focuses on alloying of TMH compounds to explore the potentials for tuning their properties. In this thesis, the ternary cation alloys of Co(1-x)Ni(x)Cl(2) and Mo(1-x)Cr(x)Cl(3) were synthesized via chemical vapor transport at a various stoichiometry. Their compositional, structural, and magnetic properties were studied using Energy Dispersive Spectroscopy, Raman Spectroscopy, X-Ray Diffraction, and Vibrating Sample Magnetometry. It was found that completely miscible ternary alloys of Co(1-x)Ni(x)Cl(2) show an increasing Néel temperature with nickel concentration. The Mo(1-x)Cr(x)Cl(3) alloy shows potential magnetic phase changes induced by the incorporation of molybdenum species within the host CrCl3 lattice. Magnetic measurements give insight into potential antiferromagnetic to ferromagnetic transition with molybdenum incorporation, accompanied by a shift in the magnetic easy-axis from parallel to perpendicular. Phase separation was found in the Fe(1-x)Cr(x)Cl(3) ternary alloy indicating that crystallographic structure compatibility plays an essential role in determining the miscibility of two parent compounds. Alloying across two similar (TMH) compounds appears to yield predictable results in properties as in the case of Co(1-x)Ni(x)Cl(2), while more exotic transitions, as in the case of Mo(1-x)Cr(x)Cl(3), can emerge by alloying dissimilar compounds. When dissimilarity reaches a certain limit, as with Fe(1-x)Cr(x)Cl(3), phase separation becomes more favorable. Future studies focusing on magnetic and structural phase transitions will reveal more insight into the effect of alloying in these TMH systems.
Dissertation/Thesis
Masters Thesis Materials Science and Engineering 2020

abstract: A new class of layered materials called the transition metal trichalcogenides (TMTCs) exhibit strong anisotropic properties due to their quasi-1D nature. These 2D materials are composed of chain-like structures which are weakly bound to form planar sheets with highly directional properties. The vibrational properties of three materials from the TMTC family, specifically TiS3, ZrS3, and HfS3, are relatively unknown and studies performed in this work elucidates the origin of their Raman characteristics. The crystals were synthesized through chemical vapor transport prior to mechanical exfoliation onto Si/SiO¬2 substrates. XRD, AFM, and Raman spectroscopy were used to determine the crystallinity, thickness, and chemical signature of the exfoliated crystals. Vibrational modes and anisotropic polarization are investigated through density functional theory calculations and angle-resolved Raman spectroscopy. Particular Raman modes are explored in order to correlate select peaks to the b-axis crystalline direction. Mode III vibrations for TiS3, ZrS3, and HfS3 are shared between each material and serves as a unique identifier of the crystalline orientation in MX3 materials. Similar angle-resolved Raman studies were conducted on the novel Nb0.5Ti0.5S3 alloy material grown through chemical vapor transport. Results show that the anisotropy direction is more difficult to determine due to the randomization of quasi-1D chains caused by defects that are common in 2D alloys. This work provides a fundamental understanding of the vibrational properties of various TMTC materials which is needed to realize applications in direction dependent polarization and linear dichroism.
Dissertation/Thesis
Masters Thesis Materials Science and Engineering 2017