Relevant bibliographies by topics / CIGS solar cells

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Academic literature on the topic 'CIGS solar cells'

Author: Grafiati
Published: 4 June 2021
Last updated: 19 February 2022

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Journal articles on the topic "CIGS solar cells"

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Wada, T., Y. Hashimoto, S. Nishiwaki, T. Satoh, S. Hayashi, T. Negami, and H. Miyake. "High-efficiency CIGS solar cells with modified CIGS surface." Solar Energy Materials and Solar Cells 67, no. 1-4 (March 2001): 305–10. http://dx.doi.org/10.1016/s0927-0248(00)00296-8.

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Sajadnia, Mohsen, Sajjad Dehghani, Zahra Noraeepoor, and Mohammad Hossein Sheikhi. "Highly improvement in efficiency of Cu(In,Ga)Se2 thin film solar cells." World Journal of Engineering 17, no. 4 (June 6, 2020): 527–33. http://dx.doi.org/10.1108/wje-02-2020-0068.

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Purpose The purpose of this study is to design and optimize copper indium gallium selenide (CIGS) thin film solar cells. Design/methodology/approach A novel bi-layer CIGS thin film solar cell based on SnS is designed. To improve the performance of the CIGS based thin film solar cell a tin sulfide (SnS) layer is added to the structure, as back surface field and second absorbing layer. Defect recombination centers have a significant effect on the performance of CIGS solar cells by changing recombination rate and charge density. Therefore, performance of the proposed structure is investigated in two stages successively, considering typical and maximum reported trap density for both CIGS and SnS. To achieve valid results, the authors use previously reported experimental parameters in the simulations. Findings First by considering the typical reported trap density for both SnS and CIGS, high efficiency of 36%, was obtained. Afterward maximum reported trap densities of 1 × 1019 and 5.6 × 1015 cm−3 were considered for SnS and CIGS, respectively. The efficiency of the optimized cell is 27.17% which is achieved in CIGS and SnS thicknesses of cell are 0.3 and 0.1 µm, respectively. Therefore, even in this case, the obtained efficiency is well greater than previous structures while the absorbing layer thickness is low. Originality/value Having results similar to practical CIGS solar cells, the impact of the defects of SnS and CIGS layers was investigated. It was found that affixing SnS between CIGS and Mo layers causes a significant improvement in the efficiency of CIGS thin-film solar cell.
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Han, Ming Yu, Yu Dong Feng, Yi Wang, Zhi Min Wang, Hu Wang, Kai Zhao, Xiao Mei Su, Miao Yang, and Xue Lei Li. "Development of Manufacturing CIGS Thin Film Solar Cells Deposited on Polyimide." Applied Mechanics and Materials 700 (December 2014): 161–69. http://dx.doi.org/10.4028/www.scientific.net/amm.700.161.

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CIGS thin film solar cells on polyimide substrate was a significant developmental direction of solar cells and fabricating high quality CIGS thin film in low temperature was its pivotal technology. The development of manufacturing the CIGS thin film solar cells on polyimide substrate in low temperature was described. The specific principle, manufacturing technique and application prospect were also involved. The problem should be solved in the future progress of CIGS thin film on polyimide substrate was illustrated.
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Huang, Chia-Hua, Wen-Jie Chuang, Chun-Ping Lin, Yueh-Lin Jan, and Yu-Chiu Shih. "Deposition Technologies of High-Efficiency CIGS Solar Cells: Development of Two-Step and Co-Evaporation Processes." Crystals 8, no. 7 (July 18, 2018): 296. http://dx.doi.org/10.3390/cryst8070296.

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The two-step process including the deposition of the metal precursors followed by heating the metal precursors in a vacuum environment of Se overpressure was employed for the preparation of Cu(In,Ga)Se2 (CIGS) films. The CIGS films selenized at the relatively high Se flow rate of 25 Å/s exhibited improved surface morphologies. The correlations among the two-step process parameters, film properties, and cell performance were studied. With the given selenization conditions, the efficiency of 12.5% for the fabricated CIGS solar cells was achieved. The features of co-evaporation processes including the single-stage, bi-layer, and three-stage process were discussed. The characteristics of the co-evaporated CIGS solar cells were presented. Not only the surface morphologies but also the grading bandgap structures were crucial to the improvement of the open-circuit voltage of the CIGS solar cells. Efficiencies of over 17% for the co-evaporated CIGS solar cells have been achieved. Furthermore, the critical factors and the mechanisms governing the performance of the CIGS solar cells were addressed.
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Ullah, Hanif, Bernabé Marí, and Hai Ning Cui. "Investigation on the Effect of Gallium on the Efficiency of CIGS Solar Cells through Dedicated Software." Applied Mechanics and Materials 448-453 (October 2013): 1497–501. http://dx.doi.org/10.4028/www.scientific.net/amm.448-453.1497.

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This work reports on the analysis of thin-film copperindiumgalliumdiselenide (CIGS) solar cells by using Solar Cell Capacitance Simulator software (SCAPS). We have modeled a PV device, which consists in a CIGS absorber, a CdS buffer and a ZnO window layer. We have studied the behavior of CIGS absorber as a function of Gallium content by simulating the behavior of CIGS solar cells versus the Ga content in the absorber layer.
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Ong, Kam Hoe, Ramasamy Agileswari, Biancamaria Maniscalco, Panagiota Arnou, Chakrabarty Chandan Kumar, Jake W. Bowers, and Marayati Bte Marsadek. "Review on Substrate and Molybdenum Back Contact in CIGS Thin Film Solar Cell." International Journal of Photoenergy 2018 (September 12, 2018): 1–14. http://dx.doi.org/10.1155/2018/9106269.

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Copper Indium Gallium Selenide- (CIGS-) based solar cells have become one of the most promising candidates among the thin film technologies for solar power generation. The current record efficiency of CIGS has reached 22.6% which is comparable to the crystalline silicon- (c-Si-) based solar cells. However, material properties and efficiency on small area devices are crucial aspects to be considered before manufacturing into large scale. The process for each layer of the CIGS solar cells, including the type of substrate used and deposition condition for the molybdenum back contact, will give a direct impact to the efficiency of the fabricated device. In this paper, brief introduction on the production, efficiency, etc. of a-Si, CdTe, and CIGS thin film solar cells and c-Si solar cells are first reviewed, followed by the recent progress of substrates. Different deposition techniques’ influence on the properties of molybdenum back contact for CIGS are discussed. Then, the formation and thickness influence factors of the interfacial MoSe2 layer are reviewed; its role in forming ohmic contact, possible detrimental effects, and characterization of the barrier layers are specified. Scale-up challenges/issues of CIGS module production are also presented to give an insight into commercializing CIGS solar cells.
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Pethuraja, Gopal G., Roger E. Welser, John W. Zeller, Yash R. Puri, Ashok K. Sood, Harry Efstathiadis, Pradeep Haldar, and Jennifer L. Harvey. "Advanced Flexible CIGS Solar Cells Enhanced by Broadband Nanostructured Antireflection Coatings." MRS Proceedings 1771 (2015): 145–50. http://dx.doi.org/10.1557/opl.2015.589.

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ABSTRACTFlexible copper indium gallium diselenide (CIGS) solar cells on lightweight substrates can deliver high specific powers. Flexible lightweight CIGS solar cells are also primary candidates for building-integrated panels. In all applications, CIGS cells can greatly benefit from the application of broadband and wide-angle AR coating technology. The AR coatings can significantly improve the transmittance of light over the entire CIGS absorption band spectrum. Increased short-circuit current has been observed after integrating AR coated films onto baseline solar panels. NREL’s System Advisor Model (SAM) has predicted up to 14% higher annual power output on AR integrated vertical or building-integrated panels. The combination of lightweight flexible substrates and advanced device designs employing nanostructured optical coatings together have the potential to achieve flexible CIGS modules with enhanced efficiencies and specific power.
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Chen, Sheng-Hui, Wei-Ting Lin, Shih-Hao Chan, Shao-Ze Tseng, Chien-Cheng Kuo, Sung-Cheng Hu, Wan-Hsuan Peng, and Yung-Tien Lu. "Photoluminescence Analysis of CdS/CIGS Interfaces in CIGS Solar Cells." ECS Journal of Solid State Science and Technology 4, no. 9 (2015): P347—P350. http://dx.doi.org/10.1149/2.0041509jss.

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Kawakita, Shirou, Mitsuru Imaizumi, Shogo Ishizuka, Hajime Shibata, Shigeru Niki, Shuichi Okuda, and Hiroaki Kusawake. "Characterization of Electron-Induced Defects in Cu (In, Ga) Se2 Thin-Film Solar Cells using Electroluminescence." MRS Proceedings 1538 (2013): 27–32. http://dx.doi.org/10.1557/opl.2013.981.

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ABSTRACTCIGS solar cells were irradiated with 250 keV electrons, which can create only Cu-related defects in the cell, to reveal the radiation defect. The EL image of CIGS solar cells before electron irradiation at 120 K described small grains, thought to be those of the CIGS. After 250 keV electron irradiation of the CIGS cell, the cell was uniformly illuminated compared to before the electron irradiation and the observed grains were unclear. In addition, the EL intensity rose with increasing electron fluence, meaning the change in EL efficiency may be attributable to the decreased likelihood of non-irradiative recombination in intrinsic defects due to electron-induced defects. Since the light soaking effect for CIGS solar cells is reported the same phenomena, the 250 keV electron radiation effects for CIGS solar cells might be equivalent to the effect.
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Decock, Koen, Johan Lauwaert, and Marc Burgelman. "Characterization of graded CIGS solar cells." Energy Procedia 2, no. 1 (August 2010): 49–54. http://dx.doi.org/10.1016/j.egypro.2010.07.009.

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Dissertations / Theses on the topic "CIGS solar cells"

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Rostvall, Fredrik. "Potential Induced Degradation of CIGS Solar Cells." Thesis, Uppsala universitet, Fasta tillståndets elektronik, 2014. http://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-227745.

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This thesis studies the effects of Na diffusion in Cu(In,Ga)Se2 (CIGS) solar cells,caused by electrical Potential Induced Degradation (PID) and how to prevent it. Thiswas done by subjecting CIGS solar cells a temperature of 850C and an electrical biasfrom the backside of the glass substrate to the Mo back contact of the CIGS cell.When the bias was negative at the back contact the Na diffused in to the CIGS(degradation) and when it was positive the ions diffused out again (recovery). TheCIGS samples were electrically characterized with IV- and EQE-measurements duringthese conditions and compositional depth profiling was used to track the Nadistribution.This study showed that during degradation Na seemed to accumulate in the interfacesbetween the different layers in the CIGS cell. The buffer and window layers arestrongly affected by Na diffusion. Zn(O,S) buffer layer showed a clear difference inrecovery behavior compared to CdS buffer layer. The introduction of an Al2O3barrier layer between the CIGS and Mo back contact increased the degradation timefrom 50 h to 160 h. During this study it was also found that in some cases the CIGSsolar cells efficiency could be improved by degrading the cells and then recoveringthem, in the best case from 13% average energy efficiency to 15% efficiency.
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Gunaicha, Purnaansh Prakash. "Optical Modeling of Solar Cells." University of Toledo / OhioLINK, 2012. http://rave.ohiolink.edu/etdc/view?acc_num=toledo1344815193.

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Sampathkumar, Manikandan. "Processing of Advanced Two-Stage CIGS Solar Cells." Scholar Commons, 2013. http://scholarcommons.usf.edu/etd/4938.

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An advancement of the two stage growth recipe for the fabrication of CIGS solar cells was developed. The developed advancement was inconsistent in producing samples of similar stoichiometry. This was a huge barrier for up scaling the process as the behavior of devices would be different due to variation in stoichiometry. Samples with reproducible stoichiometry were obtained once the heating rate of elements, selenium in particular was better understood. This is mainly attributed to the exponential increase of selenium flux after its evaporation temperature. Monitoring the selenium flux was vital in getting constant selenium fluxes. Few changes to the growth recipe were induced to optimize the amount of selenium being used. Depositions were done using constant selenium to metal flux ratio of 5. Elemental tradeoffs were observed as a result of the growth recipe change. These tradeoffs are in favor of the two stage growth recipe. The solar cells were fabricated on a soda lime glass substrate with a molybdenum back contact. Improper sample cleaning and storage were found to affect the deposition outcome of the molybdenum back contact. This also had a cascading effect on the absorber layer. Residual precipitates during deposition of CdS were avoided by increasing the spinner speed which increased the reaction rate. This is attributed to the growth of CdS either by cluster-by-cluster growth or by ion-by-ion growth. SEM, EDS were some important tools used to characterize the devices. EDS in particular, was used extensively at different stages throughout the growth process to ensure that we were heading in the right direction. Current-voltage (I-V) measurements were done to study the solar cell performance under light and dark.
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Mohanakrishnaswamy, Venkatesh. "Processing and characterization of CIGS - based solar cells." [Tampa, Fla.] : University of South Florida, 2004. http://purl.fcla.edu/fcla/etd/SFE0000368.

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De, Abreu Mafalda Jorge Alexandre. "Advanced rear contact design for CIGS solar cells." Thesis, KTH, Skolan för elektroteknik och datavetenskap (EECS), 2019. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-257846.

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The current trend concerning the thinning of solar cell devices is mainly motivated by economic aspects, such as the cost of the used rare-earth elements, and by the requirements of emergent technologies. The introduction of ultra-thin absorber layers results in a reduction of used materials and thus contributes to a more cost-effective and time-efficient production process.However, the use of absorber layers with thicknesses below 500nm gives rise to multiple apprehensions, including concerns regarding light management and the absorber’s quality.Therefore, this experimental work presents a novel solar cell architecture that aims to tackle the issues of optical and electrical losses associated with ultra-thin absorber layers. To that end, a Hafnium Oxide (H f O2) rear side passivation layer was introduced in-between the copper indium gallium (di)selenide Cu(In, Ga)Se2, CIGS-based absorber layer and the Molybdenum (Mo) back contact. Then, the proposed Potassium Fluoride (KF) alkali treatment successfully established point contacts on the ALD-deposited oxide layer, resulting in a passivation effect with minimum current blockage.The established cell architecture showed significant improvements regarding both open circuit voltage (Open-Circuit Voltage (Voc)) and efficiency when compared to unpassivated reference devices. The used solar cell simulator (SCAPS) attributes the observed improvements to a reduced minority carrier recombination velocity at the rear side of the device. Moreover, the provided photoluminescence (PL) results report a higher peak intensity and lifetime for passivated devices.Furthermore, the overlay of the given external quantum efficiency (EQE) spectra with the performed simulations show that the HfO2 passivation layer improves the optical reflection from the rear contact over a wavelength interval ranging from 500 to 1100 nm, resulting in a short circuit current (Jsc) improvement. An increased quantum efficiency observed throughout almost the entire measurement range, confirms that the enhance in Jsc is also due to electronic effects.Here, a produced solar cell device including a 3nm-thick HfO2 rear passivation layer and a 500nm-thick 3-stage CIGS absorber, achieved a conversion efficiency of 9.8%.Further, the approach of combining an innovative rear surface passivation layer with a fluoride-based alkali treatment resulted in the development and successful characterisation of a 1-stage, 8.6% efficient solar cell. Such result, mainly due to a short circuit current (Jsc) enhancement, supports the introduction of more straightforward production steps, which allows a more cost-effective and time-efficient production process. The produced device consisted of a 500nm-thick CIGS absorber, rear passivated with an ultra-thin (2nm) HfO2 layer combined with a 0.6M KF treatment.
Den nuvarande trenden när det gäller solcellsanordningar huvudsakligen motiveras av ekonomiska aspekter, såsom kostnaden för att använda sällsynta jordartsmetaller, och av kraven i ny teknik. Införandet av ultratunna absorptionsskikt resulterar i en minskning av använda material och bidrar därmed till en mer kostnadseffektiv och tidseffektiv produktionsprocess.Användningen av absorptionsskikt med tjocklekar under 500 nm ger emellertid upphov till flera bekymmer, beträffande ljushantering och absorptorkvalitet.Därför presenterar detta experimentella arbete en ny solcellarkitektur som syftar till att ta itu med frågorna om optiska och elektriska förluster förknippade med ultratunna absorberlager. För detta ändamål infördes ett Hafnium Oxide (H f O2) bakre sidopassiveringsskikt mellan kopparindiumgallium (di) selenid Cu(In, Ga)Se2, CIGSbaserat absorberande skikt och Molybdenum (Mo) kontakt. Sedan upprättade den föreslagna kaliumfluorid (KF) alkali-behandlingen framgångsrikt punktkontakter på det ALD-avsatta oxidskiktet, vilket resulterade i en passiveringseffekt med minimal strömblockering.Den etablerade cellarkitektur visade signifikanta förbättringar avseende både öppna kretsspänningen (Voc) och effektivitet i jämförelse med opassiverad referensanordningar. Den använda solcellsimulatorn (SCAPS) tillskriver de observerade förbättringarna till en minskad minoritetsbärares rekombinationshastighet på enhetens baksida. Dessutom de tillhandahålls fotoluminescens (PL) resultat rapporterar en högre toppintensitet och livslängd för passive enheter.Dessutom visar överläggningen av det givna externa kvantitetseffektivitetsspektrumet (EQE) med de utförda simuleringarna att passiveringsskiktet HfO2 förbättrar den optiska reflektionen från den bakre kontakten över ett våglängdsintervall från 500 till 1100 nm, vilket resulterar i i en kortslutningsström (Jsc) förbättring. En ökad kvantverkningsgrad observerats i nästan hela mätområdet, bekräftar att öka i Jsc är också på grund av elektroniska effekter.Här, en producerad solcellsanordning innefattande en 3 nm-tjock HfO2 bakre passiveringsskikt och ett 500 nm-tjock 3-stegs CIGS absorber, uppnått en omvandlingseffektivitet på 9.8%.Vidare resulterade tillvägagångssättet att kombinera ett innovativt bakre ytpassiveringsskikt med en fluoridbaserad alkalibehandling i utvecklingen och framgångsrik karaktärisering av en 1-stegs, 8.6% effektivitet solcell. Ett sådant resultat, främst på grund av en kortslutningsström (Jsc) förbättring, stöder införandet av mer enkla produktionssteg, vilket möjliggör en mer kostnadseffektiv och tidseffektiv produktionsprocess. Den framställda anordningen bestod av ett 500 nm-tjock CIGS absorber, bakre passiverad med en ultra-tunn (2 nm) HfO2-skikt kombineras med en 0.6M KF behandling.
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Söderström, Wilhelm. "Alternative back contact for CIGS solar cells built on sodium-free substrates." Thesis, Uppsala universitet, Fasta tillståndets elektronik, 2011. http://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-154004.

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It is widely known that the element sodium plays a vital role in providing highefficiency CIGS solar cells and that when cells are built on sodium free substrates theyneed an alternative (a substitute) sodium source. In this study a molybdenum-sodiumcompound has been deposited, investigated and evaluated as an alternative backcontact layer containing sodium. The compound had a 5 at % sodium concentrationand it was manufactured by an Austrian company called Plansee. The aim of the studywas to create an equivalent back contact in the sense of sodium delivery, conductivityand adhesion compared to a normal molybdenum back contact on a soda lime glass. The experimental part of the study started with the construction of complete cells,which were fabricated and measured. This work took place at the ÅngströmLaboratory, Uppsala University, Sweden. The characteristics of the layer and the cellswere analyzed by current voltage measurements, quantum efficiency measurementsand secondary ion mass spectrometry analysis. Cell manufacturing involved sputtering,co evaporation and chemical deposition processes. Results show that the molybdenum-sodium compound increases the efficiency of acell built on a sodium-free substrate. Efficiencies reached 8 % for cells without sodiumin the molybdenum and these cells produced 67 % efficiency and 80 % open circuitvoltage of the reference value. Cells with sodium in the back contact layer produced90 % of the efficiency and 95% of the open circuit voltage relative to the references.The best cell with the molybdenum-sodium compound reached an efficiency of 13.3%. This implies that the new back contact layer acts as a sodium source but the cellshave 1-2 % lower efficiency than the reference cells built on soda lime glass. Othercharacteristics of the layer as conductivity and adhesion show no significant differenceto an ordinary molybdenum back contact. Measurements also indicate that the sodium is probably located inside themolybdenum grains and just a small amount is found at the boundaries and in betweenthe grains. Sodium inside the molybdenum grains is difficult to extract and thereforenot enough sodium will diffuse into the CIGS layer. The conclusions drawn from this study are that the molybdenum-sodium compoundhelps to increase the efficiency of a CIGS solar cell built on a sodium-free substrate,but it does not deliver enough sodium to constitute a substitute sodium source.
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Joel, Jonathan. "Characterization of Al2O3 as CIGS surface passivation layer in high-efficiency CIGS solar cells." Thesis, Uppsala universitet, Fasta tillståndets elektronik, 2014. http://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-230228.

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In this thesis, a novel method of reducing the rear surface recombination in copper indium gallium (di) selenide (CIGS) thin film solar cells, using atomic layer deposited (ALD) Al2O3, has been evaluated via qualitative opto-electrical characterization. The idea stems from the silicon (Si) industry, where rear surface passivation layers are used to boost the open-circuit voltage and, hence, the cell efficiency. To enable a qualitative assessment of the passivation effect, Al/Al2O3/CIGS metal-oxide-semiconductor (MOS) devices with 3-50 nm oxide thickness, some post-deposition treated (i.e. annealed), have been fabricated. Room temperature capacitance-voltage (CV) measurements on the MOS devices indicated a negative fixed charge density (Qf) within the Al2O3 layer, resulting in a reduced CIGS surface recombination due to field effect passivation. After annealing the Al2O3 passivation layers, the field effect passivation appeared to increase due to a more negative Qf. After annealing have also indications of a lower density of interface traps been seen, possibly due to a stronger or activated chemical passivation. Additionally, the feasibility of using ALD Al2O3 to passivate the surface of CIGS absorber layers has also been demonstrated by room temperature photoluminescence (PL) measurements, where the PL intensity was about 20 times stronger for a structure passivated with 25 nm Al2O3 compared to an unpassivated structure. The strong PL intensity for all passivated devices suggests that both the chemical and field effect passivation were active, also for the passivated as-deposited CIGS absorbers.
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Malm, Ulf. "Modelling and Degradation Characteristics of Thin-film CIGS Solar Cells." Doctoral thesis, Uppsala University, Solid State Electronics, 2008. http://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-9291.

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Thin-film solar cells based around the absorber material CuIn1-xGaxSe2 (CIGS) are studied with respect to their stability characteristics, and different ways of modelling device operation are investigated. Two ways of modelling spatial inhomogeneities are detailed, one fully numerical and one hybrid model. In the numerical model, thin-film solar cells with randomized parameter variations are simulated showing how the voltage decreases with increasing material inhomogeneities.

With the hybrid model, an analytical model for the p-n junction action is used as a boundary condition to a numerical model of the steady state electrical conduction in the front contact layers. This also allows for input of inhomogeneous material parameters, but on a macroscopic scale. The simpler approach, compared to the numerical model, enables simulations of complete cells. Effects of material inhomogeneities, shunt defects and grid geometry are simulated.

The stability of CIGS solar cells with varying absorber thickness, varying buffer layer material and CIGS from two different deposition systems are subjected to damp heat treatment. During this accelerated ageing test the cells are monitored using characterization methods including J-V, QE, C-V and J(V)T. The degradation studies show that the typical VOC decrease experienced by CIGS cells subjected to damp heat is most likely an effect in the bulk of the absorber material.

When cells encapsulated with EVA are subjected to the same damp heat treatment, the effect on the voltage is considerably reduced. In this situation the EVA is saturated with moisture, representing a worst case scenario for a module in operation. Consequently, real-life modules will not suffer extensively from the VOC degradation effect, common in unprotected CIGS devices.

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Motahari, Sara. "Surface Passivation of CIGS Solar Cells by Atomic Layer Deposition." Thesis, KTH, Kraft- och värmeteknologi, 2013. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-127430.

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Thin film solar cells, such as Cu(In,Ga)Se2, have a large potential for cost reductions, due to their reduced material consumption. However, the lack in commercial success of thin film solar cells can be explained by lower efficiency compared to wafer-based solar cells. In this work, we have investigated the aluminum oxide as a passivation layer to reduce recombination losses in Cu(In,Ga)Se2 solar cells to increase their efficiency. Aluminum oxides have been deposited using spatial atomic layer deposition. Blistering caused by post-deposition annealing of thick enough alumina layer was suggested to make randomly arranged point contacts to provide an electrical conduction path through the device. Techniques such as current-voltage measurement, photoluminescence and external quantum efficiency were performed to measure the effectiveness of aluminum oxide as a passivation layer. Very high photoluminescence intensity was obtained for alumina layer between Cu(In,Ga)Se2/CdS hetero-junction after a heat treatment, which shows a reduction of defects at the absorber/buffer layers of the device.
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Kadam, Ankur. "PREPARATION OF EFFICIENT CUIN1-XGAXSE2-YSY/CDS THIN-FILM SOLAR CELLS BY OPTIMIZING THE MOLYBDENUM BACK CONTACT AND USING DIETHYL." Doctoral diss., University of Central Florida, 2006. http://digital.library.ucf.edu/cdm/ref/collection/ETD/id/4230.

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High efficiency CuIn1-xGaxSe2-ySy (CIGSS)/CdS thin-film solar cells were prepared by optimizing the Mo back contact layer and optimizing the parameters for preparing CIGSS absorber layer using diethylselenide as selenium source. The Mo film was sputter deposited on 2.5 cm x 10 cm soda-lime glass using DC magnetron sputtering for studying the adhesion and chemical reactivity with selenium and sulfur containing gas at maximum film growth temperature. Mo being a refractory material develops stresses, nature of which depends on the deposition power and argon pressure. It was found that the deposition sequence with two tensile stressed layers deposited at 200W and 5 x 10-3 Torr argon pressure when sandwiched between three compressively stressed layers deposited at 300 W power and 0.3 x 10-3 Torr argon pressure had the best adhesion, limited reactivity and compact nature. An organo-metallic compound, diethylselenide (DESe) was developed as selenium precursor to prepare CIGSS absorber layers. Metallic precursors Cu-In-Ga layers were annealing in the conventional furnace in the temperature range of 475oC to 515 oC and in the presence of a dilute DESe atmosphere. The films were grown in an indium rich regime. Systematic approaches lead to the optimization of each step involved in the preparation of the absorber layer. Initial experiments were focused on obtaining the range of maximum temperatures required for the growth of the film. The following experiments included optimization of soaking time at maximum temperature, quantity of metallic precursor, and amount of sodium in terms of NaF layer thickness required for selenization. The absorber surface was coated with a 50 to 60 nm thick layer of CdS as hetero-junction partner by chemical bath deposition. A window bi-layer of i:ZnO/ZnO:Al was deposited by RF magnetron sputtering. The thickness of i:ZnO was increased to reduce the shunt resistance to improve open circuit voltage. The cells were completed by depositing a Cr/Ag front contact by thermal evaporation. Efficiencies greater than 13% was achieved on glass substrates. The performance of the cells was co-related with the material properties.
Ph.D.
Department of Mechanical, Materials and Aerospace Engineering;
Engineering and Computer Science
Materials Science and Engineering
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Books on the topic "CIGS solar cells"

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United States. National Aeronautics and Space Administration., ed. Theoretical and experimental research in space photovoltaics: Electrodeposition of CuInxGa₁-xSe₂ (CIGS) thin layers for CdS/CIGS solar cell applications : final report, NASA research grant no. NAG3-1692 for the period January 23, 1995 to April 22, 1995. [Cleveland, Ohio?]: The Center, 1997.

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United States. National Aeronautics and Space Administration., ed. Theoretical and experimental research in space photovoltaics: Electrodeposition of CuInxGa₁-xSe₂ (CIGS) thin layers for CdS/CIGS solar cell applications : final report, NASA research grant no. NAG3-1692 for the period January 23, 1995 to April 22, 1995. [Cleveland, Ohio?]: The Center, 1997.

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Greer, David Martin. Growth and characterization of ZnSe/CIS solar cells. 1994.

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Book chapters on the topic "CIGS solar cells"

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Gilioli, Edmondo, Cristiano Albonetti, Francesco Bissoli, Matteo Bronzoni, Pasquale Ciccarelli, Stefano Rampino, and Roberto Verucchi. "CIGS-Based Flexible Solar Cells." In Factories of the Future, 365–82. Cham: Springer International Publishing, 2019. http://dx.doi.org/10.1007/978-3-319-94358-9_17.

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Cheng, Yu-Wen, Hong-Tao Xue, Fu-Ling Tang, and Jingbo Louise Liu. "First-Principles Simulations for CuInGaSe2 (CIGS) Solar Cells." In Nanostructured Materials for Next-Generation Energy Storage and Conversion, 45–74. Berlin, Heidelberg: Springer Berlin Heidelberg, 2019. http://dx.doi.org/10.1007/978-3-662-59594-7_2.

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Mohan, Raja, and Rini Paulose. "Brief Review on Copper Indium Gallium Diselenide (CIGS) Solar Cells." In Photoenergy and Thin Film Materials, 157–92. Hoboken, NJ, USA: John Wiley & Sons, Inc., 2019. http://dx.doi.org/10.1002/9781119580546.ch4.

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Merad, F., A. Guen-Bouazza, A. A. Kanoun, and A. E. Merad. "Optimization of Ultra-Thin CIGS Based Solar Cells by Adding New Absorber Layers: InGaAs and AlGaAs." In ICREEC 2019, 399–405. Singapore: Springer Singapore, 2020. http://dx.doi.org/10.1007/978-981-15-5444-5_50.

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Kumar, Raushan, Akhilesh Kumar, and Kumar Saurabh. "Numerical Optimization of ZnMgO/CIGS Based Heterojunction Solar Cells via Change of Buffer and BSF Layer." In Lecture Notes on Multidisciplinary Industrial Engineering, 409–19. Cham: Springer International Publishing, 2021. http://dx.doi.org/10.1007/978-3-030-73495-4_28.

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Xu, Jinlong, Joyce Zhang, and Ken Kuang. "Understanding the Influence of Belt Furnace and Firing Parameters on Efficiency of Thin-Film CIGS Solar Cells." In Conveyor Belt Furnace Thermal Processing, 21–26. Cham: Springer International Publishing, 2017. http://dx.doi.org/10.1007/978-3-319-69730-7_3.

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Kim, Ki Hwan, Byung Tae Ahn, Se Han Kwon, Jae Ho Yun, and Kyung Hoon Yoon. "Characterization of Cu(In,Ga)3Se5 Thin Film for Top Cell in CIGS Tandem Solar Cells." In Solid State Phenomena, 959–62. Stafa: Trans Tech Publications Ltd., 2007. http://dx.doi.org/10.4028/3-908451-31-0.959.

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Agnihotri, O. P., R. Thangaraj, S. P. Singh, P. Raja Ram, and A. K. Saxena. "CIS Structured Solar Cells Using Polysilicon." In Physics and Technology of Solar Energy, 101–6. Dordrecht: Springer Netherlands, 1987. http://dx.doi.org/10.1007/978-94-009-3941-7_5.

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Vervaet, A., M. Burgelman, I. Clemminck, and M. Casteleyn. "Screen Printing of CIS Films for CIS-CdS Solar Cells." In Tenth E.C. Photovoltaic Solar Energy Conference, 900–903. Dordrecht: Springer Netherlands, 1991. http://dx.doi.org/10.1007/978-94-011-3622-8_230.

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Boubakeur, M., A. Aissat, and J. P. Vilcot. "Study of Graded Ultrathin CIGS/Si Structure for Solar Cell Applications." In Lecture Notes in Electrical Engineering, 317–24. Singapore: Springer Singapore, 2020. http://dx.doi.org/10.1007/978-981-15-6259-4_33.

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Conference papers on the topic "CIGS solar cells"

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Olsen, L. C., M. E. Gross, G. L. Graff, S. N. Kundu, Xi Chu, and Steve Lin. "Approaches to encapsulation of flexible CIGS cells." In Solar Energy + Applications, edited by Neelkanth G. Dhere. SPIE, 2008. http://dx.doi.org/10.1117/12.796104.

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Zhang, Deming, Jose M. Castro, and Raymond K. Kostuk. "Commercial CIGS Solar Cells for Concentrator Applications." In Optics for Solar Energy. Washington, D.C.: OSA, 2010. http://dx.doi.org/10.1364/ose.2010.swd2.

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Coyle, Dennis J., Holly A. Blaydes, James E. Pickett, Rebecca S. Northey, and James O. Gardner. "Degradation kinetics of CIGS solar cells." In 2009 34th IEEE Photovoltaic Specialists Conference (PVSC). IEEE, 2009. http://dx.doi.org/10.1109/pvsc.2009.5411551.

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Marsillac, Sylvain, Vikash Ranjan, Krishna Aryal, Scott Little, Yunus Erkaya, Grace Rajan, Patrick Boland, et al. "Toward ultra thin CIGS solar cells." In 2012 IEEE 38th Photovoltaic Specialists Conference (PVSC). IEEE, 2012. http://dx.doi.org/10.1109/pvsc.2012.6317878.

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Rockett, A., R. Birkmire, D. Morel, S. Fonash, J.-Y. Hou, M. Marudachalam, J. D’Amico, P. Panse, S. Zafar, and D. J. Schroeder. "Next generation CIGS for solar cells." In Future generation photovoltaic technologies. AIP, 1997. http://dx.doi.org/10.1063/1.53481.

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Jayapayalan, A., H. Sankaranarayanan, M. Shankaradas, P. Panse, R. Narayanaswamy, C. S. Ferekides, and D. L. Morel. "Interface mechanisms in CIGS solar cells." In National center for photovoltaics (NCPV) 15th program review meeting. AIP, 1999. http://dx.doi.org/10.1063/1.57963.

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Rezaei, Nasim, Olindo Isabella, Zeger Vroon, and Miro Zeman. "An optical study of back contacted CIGS solar cells." In Optics for Solar Energy. Washington, D.C.: OSA, 2018. http://dx.doi.org/10.1364/ose.2018.om2d.5.

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Nakagawa, Naoyuki, Soichiro Shibasaki, Hiroki Hiraga, Mutsuki Yamazaki, Kazushige Yamamoto, and Shinya Sakurada. "Feasibility study of homojunction CIGS solar cells." In 2013 IEEE 39th Photovoltaic Specialists Conference (PVSC). IEEE, 2013. http://dx.doi.org/10.1109/pvsc.2013.6744869.

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Xiao, Y. G., Z. Q. Li, M. Lestrade, and Z. M. S. Li. "Modeling study for developing CdZnTe(CdSe)/CIGS tandem solar cells." In SPIE Solar Energy + Technology, edited by Alan E. Delahoy and Louay A. Eldada. SPIE, 2010. http://dx.doi.org/10.1117/12.860958.

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Sundaramoorthy, R., F. J. Pern, and T. Gessert. "Preliminary damp-heat stability studies of encapsulated CIGS solar cells." In SPIE Solar Energy + Technology, edited by Neelkanth G. Dhere, John H. Wohlgemuth, and Kevin Lynn. SPIE, 2010. http://dx.doi.org/10.1117/12.863076.

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Reports on the topic "CIGS solar cells"

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Sites, J. R. Characterization and Analysis of CIGS and CdTE Solar Cells: December 2004 - July 2008. Office of Scientific and Technical Information (OSTI), January 2009. http://dx.doi.org/10.2172/947438.

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Neale, Nathan. Development of Electrodeposited CIGS Solar Cells: Cooperative Research and Development Final Report, CRADA Number CRD-09-357. Office of Scientific and Technical Information (OSTI), September 2016. http://dx.doi.org/10.2172/1326564.

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Kapur, V. K., A. Bansal, O. I. Asenio, M. K. Shigeoka, P. Le, B. Gergen, M. Rasmussen, and R. Zuniga. Lab to Large Scale Transition for Non-Vacuum Thin Film CIGS Solar Cells: Phase II--Annual Technical Report, August 2003-July 2004. Office of Scientific and Technical Information (OSTI), January 2005. http://dx.doi.org/10.2172/15011721.

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Kapur, V. K., A. Bansal, P. Le, O. Asensio, and N. Shigeoka. Lab to Large Scale Transition for Non-Vacuum Thin Film CIGS Solar Cells: Phase I Annual Technical Report, 1 August 2002-31 July 2003. Office of Scientific and Technical Information (OSTI), February 2004. http://dx.doi.org/10.2172/15006756.

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Exstrom, Christopher L. CIBS Solar Cell Development. Office of Scientific and Technical Information (OSTI), October 2008. http://dx.doi.org/10.2172/939114.

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Exstrom, Christopher L., Rodney J. Soukup, and Natale J. Ianno. CIBS Solar Cell Development Final Scientific/Technical Report. Office of Scientific and Technical Information (OSTI), September 2011. http://dx.doi.org/10.2172/1025582.

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Dhere, N. G. CIGSS Thin Film Solar Cells: Final Subcontract Report, 10 October 2001-30 June 2005. Office of Scientific and Technical Information (OSTI), February 2006. http://dx.doi.org/10.2172/876707.

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Dhere, N. G. High Throughput, Low Toxic Processing of Very Thin, High Efficiency CIGSS Solar Cells: Final Report, December 2008. Office of Scientific and Technical Information (OSTI), April 2009. http://dx.doi.org/10.2172/951811.

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Olsen, L. C. Alternative Heterojunction Partners for CIS-Based Solar Cells; Final Report: 1 January 1998--31 August 2001. Office of Scientific and Technical Information (OSTI), January 2003. http://dx.doi.org/10.2172/15003609.

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Marsillac, Sylvain. High throughput CIGS solar cell fabrication via ultra-thin absorber layer with optical confinement and (Cd, CBD)-free heterojunction partner. Office of Scientific and Technical Information (OSTI), November 2015. http://dx.doi.org/10.2172/1263471.

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