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Journal articles on the topic 'CIGS solar cells'

Author: Grafiati

Published: 4 June 2021

Last updated: 19 February 2022

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1

Wada, T., Y. Hashimoto, S. Nishiwaki, T. Satoh, S. Hayashi, T. Negami, and H. Miyake. "High-efficiency CIGS solar cells with modified CIGS surface." Solar Energy Materials and Solar Cells 67, no. 1-4 (March 2001): 305–10. http://dx.doi.org/10.1016/s0927-0248(00)00296-8.

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2

Sajadnia, Mohsen, Sajjad Dehghani, Zahra Noraeepoor, and Mohammad Hossein Sheikhi. "Highly improvement in efficiency of Cu(In,Ga)Se2 thin film solar cells." World Journal of Engineering 17, no. 4 (June 6, 2020): 527–33. http://dx.doi.org/10.1108/wje-02-2020-0068.

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Purpose The purpose of this study is to design and optimize copper indium gallium selenide (CIGS) thin film solar cells. Design/methodology/approach A novel bi-layer CIGS thin film solar cell based on SnS is designed. To improve the performance of the CIGS based thin film solar cell a tin sulfide (SnS) layer is added to the structure, as back surface field and second absorbing layer. Defect recombination centers have a significant effect on the performance of CIGS solar cells by changing recombination rate and charge density. Therefore, performance of the proposed structure is investigated in two stages successively, considering typical and maximum reported trap density for both CIGS and SnS. To achieve valid results, the authors use previously reported experimental parameters in the simulations. Findings First by considering the typical reported trap density for both SnS and CIGS, high efficiency of 36%, was obtained. Afterward maximum reported trap densities of 1 × 1019 and 5.6 × 1015 cm−3 were considered for SnS and CIGS, respectively. The efficiency of the optimized cell is 27.17% which is achieved in CIGS and SnS thicknesses of cell are 0.3 and 0.1 µm, respectively. Therefore, even in this case, the obtained efficiency is well greater than previous structures while the absorbing layer thickness is low. Originality/value Having results similar to practical CIGS solar cells, the impact of the defects of SnS and CIGS layers was investigated. It was found that affixing SnS between CIGS and Mo layers causes a significant improvement in the efficiency of CIGS thin-film solar cell.

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3

Han, Ming Yu, Yu Dong Feng, Yi Wang, Zhi Min Wang, Hu Wang, Kai Zhao, Xiao Mei Su, Miao Yang, and Xue Lei Li. "Development of Manufacturing CIGS Thin Film Solar Cells Deposited on Polyimide." Applied Mechanics and Materials 700 (December 2014): 161–69. http://dx.doi.org/10.4028/www.scientific.net/amm.700.161.

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CIGS thin film solar cells on polyimide substrate was a significant developmental direction of solar cells and fabricating high quality CIGS thin film in low temperature was its pivotal technology. The development of manufacturing the CIGS thin film solar cells on polyimide substrate in low temperature was described. The specific principle, manufacturing technique and application prospect were also involved. The problem should be solved in the future progress of CIGS thin film on polyimide substrate was illustrated.

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4

Huang, Chia-Hua, Wen-Jie Chuang, Chun-Ping Lin, Yueh-Lin Jan, and Yu-Chiu Shih. "Deposition Technologies of High-Efficiency CIGS Solar Cells: Development of Two-Step and Co-Evaporation Processes." Crystals 8, no. 7 (July 18, 2018): 296. http://dx.doi.org/10.3390/cryst8070296.

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The two-step process including the deposition of the metal precursors followed by heating the metal precursors in a vacuum environment of Se overpressure was employed for the preparation of Cu(In,Ga)Se2 (CIGS) films. The CIGS films selenized at the relatively high Se flow rate of 25 Å/s exhibited improved surface morphologies. The correlations among the two-step process parameters, film properties, and cell performance were studied. With the given selenization conditions, the efficiency of 12.5% for the fabricated CIGS solar cells was achieved. The features of co-evaporation processes including the single-stage, bi-layer, and three-stage process were discussed. The characteristics of the co-evaporated CIGS solar cells were presented. Not only the surface morphologies but also the grading bandgap structures were crucial to the improvement of the open-circuit voltage of the CIGS solar cells. Efficiencies of over 17% for the co-evaporated CIGS solar cells have been achieved. Furthermore, the critical factors and the mechanisms governing the performance of the CIGS solar cells were addressed.

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5

Ullah, Hanif, Bernabé Marí, and Hai Ning Cui. "Investigation on the Effect of Gallium on the Efficiency of CIGS Solar Cells through Dedicated Software." Applied Mechanics and Materials 448-453 (October 2013): 1497–501. http://dx.doi.org/10.4028/www.scientific.net/amm.448-453.1497.

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This work reports on the analysis of thin-film copperindiumgalliumdiselenide (CIGS) solar cells by using Solar Cell Capacitance Simulator software (SCAPS). We have modeled a PV device, which consists in a CIGS absorber, a CdS buffer and a ZnO window layer. We have studied the behavior of CIGS absorber as a function of Gallium content by simulating the behavior of CIGS solar cells versus the Ga content in the absorber layer.

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6

Ong, Kam Hoe, Ramasamy Agileswari, Biancamaria Maniscalco, Panagiota Arnou, Chakrabarty Chandan Kumar, Jake W. Bowers, and Marayati Bte Marsadek. "Review on Substrate and Molybdenum Back Contact in CIGS Thin Film Solar Cell." International Journal of Photoenergy 2018 (September 12, 2018): 1–14. http://dx.doi.org/10.1155/2018/9106269.

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Copper Indium Gallium Selenide- (CIGS-) based solar cells have become one of the most promising candidates among the thin film technologies for solar power generation. The current record efficiency of CIGS has reached 22.6% which is comparable to the crystalline silicon- (c-Si-) based solar cells. However, material properties and efficiency on small area devices are crucial aspects to be considered before manufacturing into large scale. The process for each layer of the CIGS solar cells, including the type of substrate used and deposition condition for the molybdenum back contact, will give a direct impact to the efficiency of the fabricated device. In this paper, brief introduction on the production, efficiency, etc. of a-Si, CdTe, and CIGS thin film solar cells and c-Si solar cells are first reviewed, followed by the recent progress of substrates. Different deposition techniques’ influence on the properties of molybdenum back contact for CIGS are discussed. Then, the formation and thickness influence factors of the interfacial MoSe2 layer are reviewed; its role in forming ohmic contact, possible detrimental effects, and characterization of the barrier layers are specified. Scale-up challenges/issues of CIGS module production are also presented to give an insight into commercializing CIGS solar cells.

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7

Pethuraja, Gopal G., Roger E. Welser, John W. Zeller, Yash R. Puri, Ashok K. Sood, Harry Efstathiadis, Pradeep Haldar, and Jennifer L. Harvey. "Advanced Flexible CIGS Solar Cells Enhanced by Broadband Nanostructured Antireflection Coatings." MRS Proceedings 1771 (2015): 145–50. http://dx.doi.org/10.1557/opl.2015.589.

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ABSTRACTFlexible copper indium gallium diselenide (CIGS) solar cells on lightweight substrates can deliver high specific powers. Flexible lightweight CIGS solar cells are also primary candidates for building-integrated panels. In all applications, CIGS cells can greatly benefit from the application of broadband and wide-angle AR coating technology. The AR coatings can significantly improve the transmittance of light over the entire CIGS absorption band spectrum. Increased short-circuit current has been observed after integrating AR coated films onto baseline solar panels. NREL’s System Advisor Model (SAM) has predicted up to 14% higher annual power output on AR integrated vertical or building-integrated panels. The combination of lightweight flexible substrates and advanced device designs employing nanostructured optical coatings together have the potential to achieve flexible CIGS modules with enhanced efficiencies and specific power.

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8

Chen, Sheng-Hui, Wei-Ting Lin, Shih-Hao Chan, Shao-Ze Tseng, Chien-Cheng Kuo, Sung-Cheng Hu, Wan-Hsuan Peng, and Yung-Tien Lu. "Photoluminescence Analysis of CdS/CIGS Interfaces in CIGS Solar Cells." ECS Journal of Solid State Science and Technology 4, no. 9 (2015): P347—P350. http://dx.doi.org/10.1149/2.0041509jss.

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9

Kawakita, Shirou, Mitsuru Imaizumi, Shogo Ishizuka, Hajime Shibata, Shigeru Niki, Shuichi Okuda, and Hiroaki Kusawake. "Characterization of Electron-Induced Defects in Cu (In, Ga) Se2 Thin-Film Solar Cells using Electroluminescence." MRS Proceedings 1538 (2013): 27–32. http://dx.doi.org/10.1557/opl.2013.981.

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ABSTRACTCIGS solar cells were irradiated with 250 keV electrons, which can create only Cu-related defects in the cell, to reveal the radiation defect. The EL image of CIGS solar cells before electron irradiation at 120 K described small grains, thought to be those of the CIGS. After 250 keV electron irradiation of the CIGS cell, the cell was uniformly illuminated compared to before the electron irradiation and the observed grains were unclear. In addition, the EL intensity rose with increasing electron fluence, meaning the change in EL efficiency may be attributable to the decreased likelihood of non-irradiative recombination in intrinsic defects due to electron-induced defects. Since the light soaking effect for CIGS solar cells is reported the same phenomena, the 250 keV electron radiation effects for CIGS solar cells might be equivalent to the effect.

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10

Decock, Koen, Johan Lauwaert, and Marc Burgelman. "Characterization of graded CIGS solar cells." Energy Procedia 2, no. 1 (August 2010): 49–54. http://dx.doi.org/10.1016/j.egypro.2010.07.009.

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11

Park, Chan Hyeon, Jun Yong Kim, Shi-Joon Sung, Dae-Hwan Kim, and Yun Seon Do. "Design of Grating Al2O3 Passivation Structure Optimized for High-Efficiency Cu(In,Ga)Se2 Solar Cells." Sensors 21, no. 14 (July 16, 2021): 4849. http://dx.doi.org/10.3390/s21144849.

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In this paper, we propose an optimized structure of thin Cu(In,Ga)Se2 (CIGS) solar cells with a grating aluminum oxide (Al2O3) passivation layer (GAPL) providing nano-sized contact openings in order to improve power conversion efficiency using optoelectrical simulations. Al2O3 is used as a rear surface passivation material to reduce carrier recombination and improve reflectivity at a rear surface for high efficiency in thin CIGS solar cells. To realize high efficiency for thin CIGS solar cells, the optimized structure was designed by manipulating two structural factors: the contact opening width (COW) and the pitch of the GAPL. Compared with an unpassivated thin CIGS solar cell, the efficiency was improved up to 20.38% when the pitch of the GAPL was 7.5–12.5 μm. Furthermore, the efficiency was improved as the COW of the GAPL was decreased. The maximum efficiency value occurred when the COW was 100 nm because of the effective carrier recombination inhibition and high reflectivity of the Al2O3 insulator passivation with local contacts. These results indicate that the designed structure has optimized structural points for high-efficiency thin CIGS solar cells. Therefore, the photovoltaic (PV) generator and sensor designers can achieve the higher performance of photosensitive thin CIGS solar cells by considering these results.

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12

Olejníček, J., S. A. Darveau, C. L. Exstrom, Rodney J. Soukup, Ned J. Ianno, C. A. Kamler, and James Huguenin-Love. "Problems with Synthesis of Chalcopyrite CuIn_1-xB_xSe₂." Materials Science Forum 609 (January 2009): 33–36. http://dx.doi.org/10.4028/www.scientific.net/msf.609.33.

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Thin films of CuIn1-xBxSe2 (CIBS) as absorption layer in single-junction solar cells can potentially grant a higher band gap in comparison with other studied chalcopyrite materials like CuIn1-xGaxSe2 (CIGS) and CuIn1-xAlxSe2 (CIAS). The higher band gap near optimum value ~ 1.4 eV can help to achieve higher efficiency (today 19.5% for CuIn0.74Ga0.26Se2). In this paper are described first results of experiments with effort to produce CIBS films by selenization of CuInB precursor alloy in Se vapors. Resulting material was analyzed by Raman spectroscopy, X-ray diffraction, and Auger electron spectroscopy. Measurements show that formation of CIBS layer is complicated by forming of pure CuInSe2 layer with unwanted Cu2-xSe phases and by accumulation boron near to the substrate.

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13

Singh, Udai P., and Surya P. Patra. "Progress in Polycrystalline Thin-Film Cu(In,Ga)Se2Solar Cells." International Journal of Photoenergy 2010 (2010): 1–19. http://dx.doi.org/10.1155/2010/468147.

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For some time, the chalcopyrite semiconductor CuInSe2and its alloy with Ga and/or S [Cu(InGa)Se2or Cu(InGa)(Se,S)2], commonly referred as CIGS, have been leading thin-film material candidates for incorporation in high-efficiency photovoltaic devices. CuInSe2-based solar cells have shown long-term stability and the highest conversion efficiencies among all thin-film solar cells, reaching 20%. A variety of methods have been reported to prepare CIGS thin film. Efficiency of solar cells depends upon the various deposition methods as they control optoelectronic properties of the layers and interfaces. CIGS thin film grown on glass or flexible (metal foil, polyimide) substrates require p-type absorber layers of optimum optoelectronic properties and n-type wideband gap partner layers to form the p-n junction. Transparent conducting oxide and specific metal layers are used for front and back contacts. Progress made in the field of CIGS solar cell in recent years has been reviewed.

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14

Kim, Ye-Chan, Ho-Jung Jeong, Sung-Tae Kim, Young Hyun Song, Bo Young Kim, Jae Pil Kim, Bong Kyun Kang, Ju-Hyung Yun, and Jae-Hyung Jang. "Luminescent down-shifting CsPbBr3 perovskite nanocrystals for flexible Cu(In,Ga)Se2 solar cells." Nanoscale 12, no. 2 (2020): 558–62. http://dx.doi.org/10.1039/c9nr06041c.

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To overcome the parasitic absorption of UV light in the transparent conductive oxide layer of flexible CIGS solar cells, a CsPbBr₃ perovskite nanocrystal based luminescent down-shifting layer was integrated on flexible CIGS solar cells.

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15

Ahn, Byung Tae, Liudmila Larina, Ki Hwan Kim, and Soong Ji Ahn. "Development of new buffer layers for Cu(In,Ga)Se2 solar cells." Pure and Applied Chemistry 80, no. 10 (January 1, 2008): 2091–102. http://dx.doi.org/10.1351/pac200880102091.

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Recent progress in the field of Cu(In,Ga)Se2 (CIGS) thin film solar cell technology is briefly reviewed. New wide-bandgap Inx(OOH,S)y and ZnSx(OH)yOz buffers for CIGS solar cells have been developed. Advances have been made in the film deposition by the growth process optimization that allows the control of film properties at the micro- and nanolevels. To improve the CIGS cell junction characteristics, we have provided the integration of the developed Cd-free films with a very thin CdS film. Transmittances of the developed buffers were greatly increased compared to the standard CdS. Inx(OOH,S)y buffer has been applied to low-bandgap CIGS devices which have shown poor photovoltaic properties. The experimental results obtained suggest that low efficiency can be explained by unfavorable conduction band alignment at the Inx(OOH,S)y/CIGS heterojunction. The application of a wide-gap Cu(In,Ga)(Se,S)2 absorber for device fabrication yields the conversion efficiency of 12.55 %. As a result, the Inx(OOH,S)y buffer is promising for wide-bandgap Cu(In,Ga)(Se,S)2 solar cells, however, its exploration for low-bandgap CIGS devices will not allow a high conversion efficiency. The role played by interdiffusion at the double-buffer/CIGS heterojunction and its impact on the electronic structure and device performance has also been discussed.

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16

Lee, Gyeongjun, Jiyong Kim, Sungchul Kim, and Jungho Kim. "Effect of the Incoherent Encapsulation Layer and Oblique Sunlight Incidence on the Optical and Current-Voltage Characteristics of Surface-Textured Cu(In,Ga)Se2 Solar Cells Based on the Angle-Dependent Equispaced Thickness Averaging Method." Applied Sciences 11, no. 5 (February 27, 2021): 2121. http://dx.doi.org/10.3390/app11052121.

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In general, the optical and electrical characteristics of Cu(In,Ga)Se2 (CIGS) solar cells have been studied under the condition that sunlight is normally incident from the air to the CIGS solar cell having no thick front encapsulation layers. To obtain the calculation results in a realistic module application, we calculate the optical and current–voltage (J–V) characteristics of surface-textured CIGS solar cells by simultaneously considering the thick front encapsulation layers and oblique sunlight incidence. Using the proposed angle-dependent equispaced thickness averaging method (ADETAM), we incoherently model two successive front encapsulation layers of a cover glass layer and an ethylene vinyl acetate (EVA) layer, whose respective thicknesses are greater than the coherence length of sunlight (~0.6 μm). The angular dependences of reflectance spectrum and J–V curves are calculated and compared in a surface-textured CIGS solar cell with and without the inclusion of the two front encapsulation layers. We show that the optical absorption improvement of the surface-textured CIGS solar cell over the planar CIGS solar cell can be over-predicted when the thick front encapsulation layers are not considered in the optical modeling.

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17

Parisi, Antonino, Riccardo Pernice, Vincenzo Rocca, Luciano Curcio, Salvatore Stivala, Alfonso C. Cino, Giovanni Cipriani, et al. "Graded Carrier Concentration Absorber Profile for High Efficiency CIGS Solar Cells." International Journal of Photoenergy 2015 (2015): 1–9. http://dx.doi.org/10.1155/2015/410549.

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We demonstrate an innovative CIGS-based solar cells model with a graded doping concentration absorber profile, capable of achieving high efficiency values. In detail, we start with an in-depth discussion concerning the parametrical study of conventional CIGS solar cells structures. We have used the wxAMPS software in order to numerically simulate cell electrical behaviour. By means of simulations, we have studied the variation of relevant physical and chemical parameters—characteristic of such devices—with changing energy gap and doping density of the absorber layer. Our results show that, in uniform CIGS cell, the efficiency, the open circuit voltage, and short circuit current heavily depend on CIGS band gap. Our numerical analysis highlights that the band gap value of 1.40 eV is optimal, but both the presence of Molybdenum back contact and the high carrier recombination near the junction noticeably reduce the crucial electrical parameters. For the above-mentioned reasons, we have demonstrated that the efficiency obtained by conventional CIGS cells is lower if compared to the values reached by our proposed graded carrier concentration profile structures (up to 21%).

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18

Zhou, Jixiang, and Changyu Li. "Research on Copper Indium Gallium Selenide (CIGS) Thin-Film Solar Cells." E3S Web of Conferences 267 (2021): 02031. http://dx.doi.org/10.1051/e3sconf/202126702031.

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As a new-style solar cell, copper indium gallium selenide (CIGS) thin-film solar cell owns excellent characteristics of solar energy absorption, and it is one of the widely used thin-film solar cells. This paper mainly focuses on the research progress of this type of solar cell. Firstly, its theoretical principles are briefly described. Then, its cell materials, configuration and fabrication procedure are introduced. Subsequently, the remarkable research work about CIGS solar cell are reviewed. Finally, its commercial status is illustrated, followed by the critical issues and future perspectives.

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19

Sharma, K., B. L. Williams, A. Mittal, H. C. M. Knoops, B. J. Kniknie, N. J. Bakker, W. M. M. Kessels, R. E. I. Schropp, and M. Creatore. "Expanding Thermal Plasma Chemical Vapour Deposition of ZnO:Al Layers for CIGS Solar Cells." International Journal of Photoenergy 2014 (July 6, 2014): 1–9. http://dx.doi.org/10.1155/2014/253140.

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Aluminium-doped zinc oxide (ZnO:Al) grown by expanding thermal plasma chemical vapour deposition (ETP-CVD) has demonstrated excellent electrical and optical properties, which make it an attractive candidate as a transparent conductive oxide for photovoltaic applications. However, when depositing ZnO:Al on CIGS solar cell stacks, one should be aware that high substrate temperature processing (i.e., >200°C) can damage the crucial underlying layers/interfaces (such as CIGS/CdS and CdS/i-ZnO). In this paper, the potential of adopting ETP-CVD ZnO:Al in CIGS solar cells is assessed: the effect of substrate temperature during film deposition on both the electrical properties of the ZnO:Al and the eventual performance of the CIGS solar cells was investigated. For ZnO:Al films grown using the high thermal budget (HTB) condition, lower resistivities, ρ, were achievable (~5 × 10−4 Ω·cm) than those grown using the low thermal budget (LTB) conditions (~2 × 10−3 Ω·cm), whereas higher CIGS conversion efficiencies were obtained for the LTB condition (up to 10.9%) than for the HTB condition (up to 9.0%). Whereas such temperature-dependence of CIGS device parameters has previously been linked with chemical migration between individual layers, we demonstrate that in this case it is primarily attributed to the prevalence of shunt currents.

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20

Ramanujam, Jeyakumar, and Udai P. Singh. "Copper indium gallium selenide based solar cells – a review." Energy & Environmental Science 10, no. 6 (2017): 1306–19. http://dx.doi.org/10.1039/c7ee00826k.

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21

C. B., Isabela, Ricardo A. Marques Lameirinhas, João Paulo N. Torres, and Carlos A. F. Fernandes. "Comparative study of the copper indium gallium selenide (CIGS) solar cell with other solar technologies." Sustainable Energy & Fuels 5, no. 8 (2021): 2273–83. http://dx.doi.org/10.1039/d0se01717e.

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A comparative study among photovoltaic technologies: (1) comparison of CIGS technology with others: theoretical, experimental and simulations; (2) optical simulations for CIGS, c-Si and perovskite cells; (3) study of the impact of the gallium and indium on the absorption.

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22

Saji, Viswanathan S., Sang-Min Lee, and Chi-Woo Lee. "CIGS Thin Film Solar Cells by Electrodeposition." Journal of the Korean Electrochemical Society 14, no. 2 (May 31, 2011): 61–70. http://dx.doi.org/10.5229/jkes.2011.14.2.061.

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23

Lin, Leqi, and Nuggehalli M. Ravindra. "CIGS and perovskite solar cells – an overview." Emerging Materials Research 9, no. 3 (September 1, 2020): 812–24. http://dx.doi.org/10.1680/jemmr.20.00124.

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24

Powalla, M., and B. Dimmler. "Scaling up issues of CIGS solar cells." Thin Solid Films 361-362 (February 2000): 540–46. http://dx.doi.org/10.1016/s0040-6090(99)00849-4.

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25

Ćwil, Michał, Małgorzata Igalson, Paweł Zabierowski, Chrystian A. Kaufmann, and Axel Neisser. "Capacitance profiling in the CIGS solar cells." Thin Solid Films 515, no. 15 (May 2007): 6229–32. http://dx.doi.org/10.1016/j.tsf.2006.12.102.

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26

Fraga, D., T. Stoyanova Lyubenova, R. Martí, I. Calvet, E. Barrachina, and J. B. Carda. "Ecologic ceramic substrates for CIGS solar cells." Ceramics International 42, no. 6 (May 2016): 7148–54. http://dx.doi.org/10.1016/j.ceramint.2016.01.104.

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27

Ngoy, Kitalu Ricin, Abhay Kumar Singh, and Tien-Chien Jen. "Impact of doping concentration, thickness, and band-gap on individual layer efficiency of CIGS solar cell." Functional Materials Letters 14, no. 05 (May 25, 2021): 2151022. http://dx.doi.org/10.1142/s179360472151022x.

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An investigation with the individual layer physical property of the CIGS solar cells is a significant parameter to design and fabricate highly efficient devices. Therefore, this work demonstrates the thickness and carrier concentrations doping dependence simulations using SCAPS 1D software. The optimized CIGS solar cells different layer properties such as short-circuit current density ([Formula: see text], open-circuit voltage ([Formula: see text], Fill Factor (FF) and conversion efficiency ([Formula: see text] with varying thickness and doped concentration are presented. This optimized layer by layer simulation work would be useful to build a suitable CIGS solar cell structure. This simulation investigation showed that an optimal CIGS device structure can be fabricated possessing the configuration of a window layer ZnO : Al thickness 0.02 [Formula: see text]m, ZnO layer thickness 0.01 [Formula: see text] m with [Formula: see text] = 10[Formula: see text] cm[Formula: see text] and [Formula: see text] = 10[Formula: see text] cm[Formula: see text], a CdS buffer layer thickness 0.01 [Formula: see text]m with [Formula: see text] = 10[Formula: see text] cm[Formula: see text] and absorber layer CIGS in the thickness range of 1–4 [Formula: see text]m with the doping level range [Formula: see text] = 10[Formula: see text]–10[Formula: see text] cm[Formula: see text], along with the optimal CIGS energy bandgap range of 1.3–1.45 eV. According to optimized simulation results, a CIGS solar cell device can possess electric efficiency 26.61%, FF 82.96%, current density of 38.21 mA/cm2 with the open circuit voltage 0.7977 eV. Hence, these optimized simulation findings could be helpful to provide a path to design and fabricate highly efficient CIGS solar cells devices.

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Han, Qifeng, Yao-Tsung Hsieh, Lei Meng, Jyh-Lih Wu, Pengyu Sun, En-Ping Yao, Sheng-Yung Chang, et al. "High-performance perovskite/Cu(In,Ga)Se2 monolithic tandem solar cells." Science 361, no. 6405 (August 30, 2018): 904–8. http://dx.doi.org/10.1126/science.aat5055.

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The combination of hybrid perovskite and Cu(In,Ga)Se2 (CIGS) has the potential for realizing high-efficiency thin-film tandem solar cells because of the complementary tunable bandgaps and excellent photovoltaic properties of these materials. In tandem solar device architectures, the interconnecting layer plays a critical role in determining the overall cell performance, requiring both an effective electrical connection and high optical transparency. We used nanoscale interface engineering of the CIGS surface and a heavily doped poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine] (PTAA) hole transport layer between the subcells that preserves open-circuit voltage and enhances both the fill factor and short-circuit current. A monolithic perovskite/CIGS tandem solar cell achieved a 22.43% efficiency, and unencapsulated devices under ambient conditions maintained 88% of their initial efficiency after 500 hours of aging under continuous 1-sun illumination.

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29

Vermang, Bart, Aniket Mule, Nikhil Gampa, Sylvester Sahayaraj, Samaneh Ranjbar, Guy Brammertz, Marc Meuris, and Jef Poortmans. "Progress in Cleaning and Wet Processing for Kesterite Thin Film Solar Cells." Solid State Phenomena 255 (September 2016): 348–53. http://dx.doi.org/10.4028/www.scientific.net/ssp.255.348.

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Copper indium gallium selenide/sulfide (CIGS) and copper zinc tin selenide/sulfide (CZTS) are two thin film photovoltaic materials with many similar properties. Therefore, three new processing steps – which are well-known to be beneficial for CIGS solar cell processing – are developed, optimized and implemented in CZTS solar cells. For all these novel processing steps an increase in minority carrier lifetime and cell conversion efficiency is measured, as compared to standard CZTS processing. The scientific explanation of these effects is very similar to its CIGS equivalent: the incorporation of alkali metals, ammonium sulfide surface cleaning, and Al2O3 surface passivation leads to electrical enhancement of the CZTS bulk, front surface and reduced front interface recombination, respectively.

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Zhang, Fengyan, Chivin Sun, Cyril Bajracharya, Rene G. Rodriguez, and Joshua J. Pak. "Fabrication and Characterization of Thin Film Solar Cell Made from CuIn0.75Ga0.25S2Wurtzite Nanoparticles." Journal of Nanomaterials 2013 (2013): 1–5. http://dx.doi.org/10.1155/2013/320375.

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CuIn0.75Ga0.25S2(CIGS) thin film solar cells have been successfully fabricated using CIGS Wurtzite phase nanoparticles for the first time. The structure of the cell is Glass/Mo/CIGS/CdS/ZnO/ZnO:Al/Ag. The light absorption layer is made from CIGS Wurtzite phase nanoparticles that are formed from single-source precursors through a microwave irradiation. The Wurtzite phase nanoparticles were converted to Chalcopyrite phase film through a single-step annealing process in the presence of argon and sulfur at 450°C. The solar cell made from Wurtzite phase nanoparticles showed 1.6% efficiency and 0.42 fill factor.

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Sakdanuphab, Rachsak, Sojiphong Chatraphorn, and Kajornyod Yoodee. "The Advantages of Ga-Graded Obtained by Growth Profile Modification and Na Incorporation on Cu(In,Ga)Se₂ Solar Cells." Advanced Materials Research 936 (June 2014): 633–38. http://dx.doi.org/10.4028/www.scientific.net/amr.936.633.

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Cu (In,Ga)Se2 (CIGS) compound is a p-type semiconductor that has been used as light absorber layer in high efficiency thin film solar cell. The CIGS compound can be adjusted the band gap energy by varying the ratio of [Ga]/([In]+[Ga]) ratio (x). From theoretical and simulation, it was found that band gap grading in CIGS thin films showed the advantages to increase the efficiency of solar cells. Generally, the band gap grading can be done by the growth of non homogeneous x-ratio in depth of CIGS thin films. In this work, we develop two approaches to create band gap grading in CIGS thin films; (1) modifying the growth profile and (2) using Na incorporation in the growth process. The effects of Ga-graded would be revealed and compared with homogeneous CIGS thin films. CIGS thin films were grown on soda-lime glass and Al2O3 coated soda-lime glass substrates by molecular beam deposition method. The growth process was based on 2-stage and 3-stage growth profiles. The as grown films were characterized for their structural property, chemical composition and optical transmission as well as solar cell performance. The Auger electron spectroscopy in depth profiles revealed the variation of x-ratio increasing from the surface toward the back contact in CIGS films with our modified growth profile and Na incorporation. This result indicated Ga-graded in CIGS thin films. The structural property of Ga-graded CIGS films showed the (112) preferred orientation of the chalcopyrite structure with a broad asymmetric spectrum related to the inhomogeneous structure. The optical transmission measurements of the Ga-graded CIGS film showed the broad transition near the absorption edge indicating the effect of the band gap grading as a result of the variation in depth of the Ga-content. From I-V measurements, the solar cell efficiencies significantly increase due to the advantages of Ga-graded constitute.

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Alhammadi, Salh, Hyeonwook Park, and Woo Kyoung Kim. "Optimization of Intrinsic ZnO Thickness in Cu(In,Ga)Se2-Based Thin Film Solar Cells." Materials 12, no. 9 (April 26, 2019): 1365. http://dx.doi.org/10.3390/ma12091365.

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The typical structure of high efficiency Cu(InGa)Se2 (CIGS)-based thin film solar cells is substrate/Mo/CIGS/CdS/i-ZnO/ZnO:Al(AZO) where the sun light comes through the transparent conducting oxide (i.e., i-ZnO/AZO) side. In this study, the thickness of an intrinsic zinc oxide (i-ZnO) layer was optimized by considering the surface roughness of CIGS light absorbers. The i-ZnO layers with different thicknesses from 30 to 170 nm were deposited via sputtering. The optical properties, microstructures, and morphologies of the i-ZnO thin films with different thicknesses were characterized, and their effects on the CIGS solar cell device properties were explored. Two types of CIGS absorbers prepared by three-stage co-evaporation and two-step sulfurization after the selenization (SAS) processes showed a difference in the preferred crystal orientation, morphology, and surface roughness. During the subsequent post-processing for the fabrication of the glass/Mo/CIGS/CdS/i-ZnO/AZO device, the change in the i-ZnO thickness influenced the performance of the CIGS devices. For the three-stage co-evaporated CIGS cell, the increase in the thickness of the i-ZnO layer from 30 to 90 nm improved the shunt resistance (RSH), open circuit voltage, and fill factor (FF), as well as the conversion efficiency (10.1% to 11.8%). A further increas of the i-ZnO thickness to 170 nm, deteriorated the device performance parameters, which suggests that 90 nm is close to the optimum thickness of i-ZnO. Conversely, the device with a two-step SAS processed CIGS absorber showed smaller values of the overall RSH (130–371 Ω cm2) than that of the device with a three-stage co-evaporated CIGS absorber (530–1127 Ω cm2) ranging from 30 nm to 170 nm of i-ZnO thickness. Therefore, the value of the shunt resistance was monotonically increased with the i-ZnO thickness ranging from 30 to 170 nm, which improved the FF and conversion efficiency (6.96% to 8.87%).

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Chae, Sang Youn, Se Jin Park, Oh-Shim Joo, Byoung Koun Min, and Yun Jeong Hwang. "Spontaneous solar water splitting by DSSC/CIGS tandem solar cells." Solar Energy 135 (October 2016): 821–26. http://dx.doi.org/10.1016/j.solener.2016.06.058.

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Nishimura, Takahito, Yoshiaki Hirai, Yasuyoshi Kurokawa, and Akira Yamada. "Theoretical and experimental investigation of the recombination reduction at surface and grain boundaries in Cu(In,Ga)Se2 solar cells by valence band control." MRS Proceedings 1771 (2015): 125–31. http://dx.doi.org/10.1557/opl.2015.387.

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ABSTRACTWe carried out theoretical calculation for Cu(In,Ga)Se2 (CIGS) solar cells with energy bandgap of 1.4 eV assuming formation of a Cu-poor layer on the surface of CIGS films. This calculation result revealed that formation of a thinner Cu-poor layer such as a few nanometers leads to improvement of the solar cells performance. This is because interfacial recombination was suppressed due to repelling holes from the interface by valence band offset (ΔEV). Next, we investigated composition distribution in the cross section of CIGS solar cells with Ga contents of 30% and 70% by transmission electron microscopy (TEM) and energy dispersive X-ray analysis (EDX). It was revealed that the Cu-poor layer was formed on the surface and at the grain boundary (GB) in the case of conversion efficiency (η) of 17.3%, although it was not formed in the case of lower η of 13.8% for a Ga content of 30%. These results indicate that formation of the Cu-poor layer contributed to improvement of cell performance by suppression of carrier recombination. Moreover, it was also confirmed that although the Cu-poor layer was observed on the surface, it was not observed at the GB in the case of CIGS solar cells with a Ga content of 70% which had η of 12.7%. It is thought that the effect of repelling holes by ΔEV is not obtained at the GB and the solar cell performance in the Ga content of 70% is lower than that in the Ga content of 30%. Thus, we suggest importance of the Cu-poor layer at the GB for high efficiency of CIGS solar cells with high Ga contents.

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Shahriar, Ahnaf, Saif Hasnath, and Md Aminul Islam. "Effects of Operating Temperature on the Performance of c-Si, a-Si:H, CIGS, and CdTe/CdS Based Solar Cells." EDU Journal of Computer and Electrical Engineering 1, no. 1 (August 20, 2020): 31–37. http://dx.doi.org/10.46603/ejcee.v1i1.21.

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Solar photovoltaic technology is one of the most promising, economical and green technologies to harvest energy with the least effect on the environment. Crystalline silicon (c-Si), amorphous silicon (a-Si), CIGS, CdTe/CdS etc., are dominating the PV market. Operating temperature plays an important role in the performance of solar cells. A comparative investigation on the effect of operating temperature on the market available solar cells is very important in choosing the better PV technology in high-temperature applications. In this study, the performances of different solar cell technologies, namely crystalline silicon (c-Si), amorphous silicon (a-Si), CIGS, and CdTe/CdS based solar cells, have been investigated under different operating temperature by using SCAPS-1D simulation software. All parameter of a solar cell for different technology has been studied under the varying operation temperature ranging from 25 ºC to 70 ºC and the rate of change of them has been recorded. It has been found that the Voc and Pmax degrade significantly and Isc increases slightly with an increase in temperature. The temperature coefficients of Pmax for c-Si, a-Si, CdTe and CIGS have been found as -0.0724/K, -0.0362/K, -0.0112/K and -0.0663/K, respectively. On the other hand, c-Si and CIGS technologies show better quantum efficiency behaviour in both room and high operating temperatures.

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Fianti, Fianti, Badrul Munir, Kyoo Ho Kim, and Mohammad Ikhlasul Amal. "Current State: The Development of Thin Film Solar Cells Based on Kesteritee Compound." Journal Of Natural Sciences And Mathematics Research 2, no. 1 (August 23, 2017): 99. http://dx.doi.org/10.21580/jnsmr.2016.1.1.1641.

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<div style="text-align: justify;">Thin film solar cell experience fast development, especially for thin film solar cell CdTe and Cu(In,Ga)Se2 (CIGS). However, the usage of rare element in the nature such as In, Te, and Ga and toxic such as Cd give limitation in the future development and production growth in big scale. Development of other alternative compound with maintain the profit of electronic and optic character which get from CIGS chalcopyrite compound will be explain. Compound of Cu2ZnSnSe4 (CZTSe) is downward compound from CIGS with substitute the In and Ga element with Zn and Sn. The compound kesterite structure can be modified with variation of chalcogen element to get wanted character in solar cell application. Efficiency record of photovoltaic devices conversion used this compound or downward reach 9.7%.©2016 JNSMR UIN Walisongo. All rights reserved.</div>

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37

Lee, Solhee, Soohyun Bae, Se Jin Park, Jihye Gwak, JaeHo Yun, Yoonmook Kang, Donghwan Kim, Young-Joo Eo, and Hae-Seok Lee. "Characterization of Potential-Induced Degradation and Recovery in CIGS Solar Cells." Energies 14, no. 15 (July 30, 2021): 4628. http://dx.doi.org/10.3390/en14154628.

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The potential-induced degradation (PID) mechanism in Cu(In,Ga)(Se,S)2 (CIGS) thin-film solar cells, which are alternative energy sources with a high efficiency (>23%) and upscaling possibilities, remains unclear. Therefore, the cause of PID in CIGS solar cells was investigated in this study at the cell level. First, an appropriate PID experiment structure at the cell level was determined. Subsequently, PID and recovery tests were conducted to confirm the PID phenomenon. Light current–voltage (I–V), dark I–V, and external quantum efficiency (EQE) analyses were conducted to determine changes in the cell characteristics. In addition, capacitance–voltage (C–V) measurements were carried out to determine the doping concentration and width of the space charge region (SCR). Based on the results, the causes of PID and recovery of CIGS solar cells were explored, and it was found that PID occurs due to changes in the bulk doping concentration and built-in potential at the junction. Furthermore, by distinguishing the effects of temperature and voltage, it was found that PID phenomena occurred when potential difference was involved.

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38

Wuerz, R., A. Eicke, M. Frankenfeld, F. Kessler, M. Powalla, P. Rogin, and O. Yazdani-Assl. "CIGS thin-film solar cells on steel substrates." Thin Solid Films 517, no. 7 (February 2009): 2415–18. http://dx.doi.org/10.1016/j.tsf.2008.11.016.

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39

Negami, T., T. Satoh, Y. Hashimoto, S. Shimakawa, S. Hayashi, M. Muro, H. Inoue, and M. Kitagawa. "Production technology for CIGS thin film solar cells." Thin Solid Films 403-404 (February 2002): 197–203. http://dx.doi.org/10.1016/s0040-6090(01)01524-3.

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Kessler, F., D. Herrmann, and M. Powalla. "Approaches to flexible CIGS thin-film solar cells." Thin Solid Films 480-481 (June 2005): 491–98. http://dx.doi.org/10.1016/j.tsf.2004.11.063.

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41

Guchhait, Asim, Herlina Arianita Dewi, Shin Woei Leow, Hao Wang, Guifang Han, Firdaus Bin Suhaimi, Subodh Mhaisalkar, Lydia Helena Wong, and Nripan Mathews. "Over 20% Efficient CIGS–Perovskite Tandem Solar Cells." ACS Energy Letters 2, no. 4 (March 15, 2017): 807–12. http://dx.doi.org/10.1021/acsenergylett.7b00187.

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Boukortt, Nour El I., Salvatore Patanè, and Yaser M. Abdulraheem. "Numerical investigation of CIGS thin-film solar cells." Solar Energy 204 (July 2020): 440–47. http://dx.doi.org/10.1016/j.solener.2020.05.021.

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Bhattacharya, R. N., Y. Kim, S. Yoon, and M. Jeon. "(Invited) Electrodeposited CIS and CIGS-based Solar Cells." ECS Transactions 50, no. 40 (April 1, 2013): 23–30. http://dx.doi.org/10.1149/05040.0023ecst.

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Fraga, D., E. Barrachina, I. Calvet, T. Stoyanova, and J. B. Carda. "Developing CIGS solar cells on glass-ceramic substrates." Materials Letters 221 (June 2018): 104–6. http://dx.doi.org/10.1016/j.matlet.2018.03.111.

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Schock, Hans-Werner, and Rommel Noufi. "CIGS-based solar cells for the next millennium." Progress in Photovoltaics: Research and Applications 8, no. 1 (January 2000): 151–60. http://dx.doi.org/10.1002/(sici)1099-159x(200001/02)8:1<151::aid-pip302>3.0.co;2-q.

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Rezaei, Nasim, Olindo Isabella, Paul Procel, Zeger Vroon, and Miro Zeman. "Optical study of back-contacted CIGS solar cells." Optics Express 27, no. 8 (February 20, 2019): A269. http://dx.doi.org/10.1364/oe.27.00a269.

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47

Benmir, A., and M. S. Aida. "Analytical Modeling and Simulation of CIGS Solar Cells." Energy Procedia 36 (2013): 618–27. http://dx.doi.org/10.1016/j.egypro.2013.07.071.

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48

da Cunha, António F., F. Kurdzesau, and Pedro M. P. Salomé. "Cu(In,Ga)Se₂ Prepared by a 2 and 3-Stage Hybrid RF-Magnetron Sputtering and Se Evaporation Method: Properties and Solar Cell Performance." Materials Science Forum 514-516 (May 2006): 93–97. http://dx.doi.org/10.4028/www.scientific.net/msf.514-516.93.

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The potential of RF-magnetron sputtering to achieve high quality Cu(In,Ga)Se2 (CIGS) thin films and efficient solar cells with the goal of using a single technique for all solar cell processing steps is explored. The end point detection method was adapted to RF-magnetron deposition of CIGS in two- or three stages sputtering process. It allows the control of the final composition of the deposited layers in a reproducible way. The influence of substrate temperature and Ar pressure during the deposition on the surface and crossectional morphology of CIGS films was studied for two and three-stage sputtering process sequence. The solar cells prepared with films deposited by two-stage sputtering nave showed a better performance with maximum efficiency above 8 %.

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Lin, Wei-Ting, Shih-Hao Chan, Shao-Ze Tseng, Jhih-Jian He, Sheng-Hui Chen, Ruei-Fu Shih, Chien-Wei Tseng, et al. "Manipulation of MoSe2Films on CuIn(Ga)Se2Solar Cells during Rapid Thermal Process." International Journal of Photoenergy 2014 (2014): 1–5. http://dx.doi.org/10.1155/2014/253285.

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In this study, the CuIn(Ga)Se2(CIGS) crystalline quality and MoSe2thickness of films produced by the rapid thermal selenization process under various selenization pressures were investigated. When the selenization pressure increased from 48 Pa to 1.45 × 104 Pa, the CIGS films were smooth and uniform with large crystals of varying sizes. However, the MoSe2thicknesses increased from 50 nm to 2,109 nm, which created increased contact resistivity for the CIGS/MoSe2/Mo structures. The efficiency of CIGS solar cells could be increased from 1.43% to 4.62% due to improvement in the CIGS crystalline quality with increasing selenization pressure from 48 Pa to 1.02 × 103 Pa. In addition, the CIGS crystalline quality and MoSe2thickness were modified by the pressure released valve (PRV) selenization process method. The crystalline qualities of the CIGS films were similarly affected by the selenization pressure at 1.02 × 103 Pa in the PRV selenization method and the MoSe2thicknesses were reduced from 1,219 nm to 703 nm. A higher efficiency of 5.2% was achieved with the thinner MoSe2obtained by using the PRV selenization method.

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Rajan, Grace, Krishna Aryal, Shankar Karki, Puruswottam Aryal, Robert W. Collins, and Sylvain Marsillac. "Characterization and Analysis of Ultrathin CIGS Films and Solar Cells Deposited by 3-Stage Process." Journal of Spectroscopy 2018 (2018): 1–9. http://dx.doi.org/10.1155/2018/8527491.

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In view of the large-scale utilization of Cu(In,Ga)Se2 (CIGS) solar cells for photovoltaic application, it is of interest not only to enhance the conversion efficiency but also to reduce the thickness of the CIGS absorber layer in order to reduce the cost and improve the solar cell manufacturing throughput. In situ and real-time spectroscopic ellipsometry (RTSE) has been used conjointly with ex situ characterizations to understand the properties of ultrathin CIGS films. This enables monitoring the growth process, analyzing the optical properties of the CIGS films during deposition, and extracting composition, film thickness, grain size, and surface roughness which can be corroborated with ex situ measurements. The fabricated devices were characterized using current voltage and quantum efficiency measurements and modeled using a 1-dimensional solar cell device simulator. An analysis of the diode parameters indicates that the efficiency of the thinnest cells was restricted not only by limited light absorption, as expected, but also by a low fill factor and open-circuit voltage, explained by an increased series resistance, reverse saturation current, and diode quality factor, associated with an increased trap density.

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