Relevant bibliographies by topics / Circuit device

Contents

  1. Journal articles
  2. Dissertations / Theses
  3. Books
  4. Book chapters
  5. Conference papers
  6. Reports

Academic literature on the topic 'Circuit device'

Author: Grafiati
Published: 28 May 2022
Last updated: 30 July 2025

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Journal articles on the topic "Circuit device"

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Lee, Changhoon, Changwoo Han, and Changhwan Shin. "Inverter design with positive feedback field-effect transistors." Semiconductor Science and Technology 37, no. 3 (2022): 035014. http://dx.doi.org/10.1088/1361-6641/ac41e5.

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Abstract As the physical size of semiconductor devices continues to be aggressively scaled down, feedback field-effect transistors (FBFET) with a positive feedback mechanism among a few promising steep switching devices have received attention as next-generation switching devices. Conventional FBFETs have been studied to explore their device performance. However, this has been restricted to the case of single FBFET; basic circuit designs with FBFETs have not been investigated extensively. In this work, we propose an inverter circuit design with silicon-on-insulator (SOI) FBFETs; we verified th
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Wang, Lu, Hongyu Zhu, Ze Zuo, and Dianzhong Wen. "Full-function logic circuit based on egg albumen resistive memory." Applied Physics Letters 121, no. 24 (2022): 243505. http://dx.doi.org/10.1063/5.0124826.

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The logic gate is the basic unit of a digital circuit structure. The operation, memory, I/O, and other reading and writing functions of computer systems require logic circuits. Logic gates based on resistive memory can make existing integrated circuits denser, smaller, faster, and use fewer devices. In this paper, Al/polymethyl methacrylate (PMMA)/egg albumen (EA):Au nanoparticles/PMMA/Al multilayer biological resistive random access memory was prepared based on the natural biological material—egg albumen (EA). The device has bipolar switching behavior, a higher switching current ratio, a lowe
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Li, Bo, and Guoyong Shi. "A Native SPICE Implementation of Memristor Models for Simulation of Neuromorphic Analog Signal Processing Circuits." ACM Transactions on Design Automation of Electronic Systems 27, no. 1 (2022): 1–24. http://dx.doi.org/10.1145/3474364.

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Since the memristor emerged as a programmable analog storage device, it has stimulated research on the design of analog/mixed-signal circuits with the memristor as the enabler of in-memory computation. Due to the difficulty in evaluating the circuit-level nonidealities of both memristors and CMOS devices, SPICE-accuracy simulation tools are necessary for perfecting the art of neuromorphic analog/mixed-signal circuit design. This article is dedicated to a native SPICE implementation of the memristor device models published in the open literature and develops case studies of applying such a circ
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Біліщук В.Б., Середюк О.Є.,, Витвицька Л.А., and Боднар Р.Т. "ADVANTAGES OF VIRTUAL MODELING FOR THE DEVELOPMENT OF MEASURING DEVICES." Перспективні технології та прилади, no. 22 (September 8, 2023): 6–11. http://dx.doi.org/10.36910/10.36910/6775-2313-5352-2023-22-01.

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The relevance of using virtual modeling of devices for engineering design is considered. An analysis of the publication on the application of computerized design technologies in the processes of device development was made. The possibilities and ways of using computer modeling in the process of developing devices in the Proteus Design and SolidWorks software environments are indicated. In the Proteus Design software environment, you can simulate the operation of electrical circuits containing programmable devices: microcontrollers and microprocessors, as well as design a printed circuit board.
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Shkirdov, R. V., and Y. V. Zhukova. "Identification device circuit." ТЕНДЕНЦИИ РАЗВИТИЯ НАУКИ И ОБРАЗОВАНИЯ 79, no. 5 (2021): 142–45. http://dx.doi.org/10.18411/trnio-11-2021-222.

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This article deals with the description of the developed identification device circuit based on logical devices. The circuit under consideration can find its application in large warehouses to facilitate the task of finding the right products.
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Ni, Haiyan, Jianping Hu, Xuqiang Zhang, and Haotian Zhu. "The Optimizations of Dual-Threshold Independent-Gate FinFETs and Low-Power Circuit Designs." Journal of Circuits, Systems and Computers 29, no. 07 (2019): 2050114. http://dx.doi.org/10.1142/s0218126620501145.

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In this paper, a method of optimizing dual-threshold independent-gate FinFET devices is discussed, and the optimal circuit design is carried out by using these optimized devices. Dual-threshold independent-gate FinFETs include low threshold devices and high threshold devices. The low threshold device is equivalent to two merging parallel short-gate devices and high threshold device is equivalent to two merging series SG devices. We optimize the device mainly by selecting the appropriate gate work function, gate oxide thickness, silicon body thickness and so on. Our optimization is based on the
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Furutani, Katsushi, and Taizo Makino. "Influence of Matrix Circuit Switching Device Junction Capacitance on Piezoelectric Actuator Drive Performance." International Journal of Automation Technology 3, no. 3 (2009): 313–18. http://dx.doi.org/10.20965/ijat.2009.p0313.

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Piezoelectric actuators are widely used as fine-motion actuators for positioning devices. Current pulse driving reduces displacement hysteresis, and the drive circuit provides current pulses considered constant charge pulses to the piezoelectric actuator. The circuit for devices with multiple degrees of freedom using multiple piezoelectric actuators should be simple. Matrix circuits are used to drive liquid crystal displays to reduce the number of drive-circuit control signals and components. A group of 2 × 2 piezoelectric actuators was driven alternately using a 4-switch matrix circuit, and t
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Harirajkumar, J., and R. Shivakumar. "Enhancing Analog Performance in Nanometer FinFET Technology: Bridging the Device-Circuit Co-Design Gap for Low-Power Applications." Journal of Nanoelectronics and Optoelectronics 19, no. 12 (2024): 1277–87. https://doi.org/10.1166/jno.2024.3692.

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In modern electronics and communication systems, the major driving force have been primarily based on down-scaling the minimum transistor size according to Moore0 s law. Furthermore, the efforts to overcome limitations of planar technology have led to development of non-traditional architecture such as Fin shaped Field Effect Transistor (FinFET) and other Multigate devices to achieve compactness. A FinFET, self-aligned process is more resilient to short channel effects in nanometer technology node. In addition to the non-planar nature of multi-gate devices, several technology integration chall
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Li, Shuo, Nan Pan, Sen Gao, and Lei Li. "Three State Output Module and Digital Switch Circuit Based on Threshold Memristor." Journal of Physics: Conference Series 2395, no. 1 (2022): 012021. http://dx.doi.org/10.1088/1742-6596/2395/1/012021.

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Abstract A memristor is a new electronic device with small volumes and small fluctuations. As a two-terminal device, it is mainly characterized by non-volatility and nanoscale characteristic size. Memristors can also calculate and store at the same time, which has a broad application prospect in logic circuits. Traditional integrated circuit technology has been very mature. And CMOS technology has almost reached the limit of physical size. Compared with traditional circuit components, memristor devices are compatible with CMOS circuits with their fast computing speed, low power consumption, an
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Gan, Kwang Jow, Zheng Jie Jiang, Cher Shiung Tsai, et al. "Design of NDR-Based Oscillators Suitable for the Nano-Based BiCMOS Technique." Applied Mechanics and Materials 328 (June 2013): 669–73. http://dx.doi.org/10.4028/www.scientific.net/amm.328.669.

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We present three oscillator designs using the negative-differential-resistance (NDR) circuit which is composed of several Si-based metal-oxide-semiconductor field-effect transistor (MOS) devices and one SiGe-based heterojunction bipolar transistor (HBT) devices. These oscillator circuits are composed of the NDR circuit, resistor, inductor, and capacitor. The oscillation frequencies are about several GHz based on the HSPICE simulation results. The circuits are designed using a standard 0.18 μm BiCMOS technique. Because our circuits are mainly made of a BiCMOS-NDR circuit that is different from
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Dissertations / Theses on the topic "Circuit device"

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Umoh, Ime J. "Graphene FET circuit-level device modelling." Thesis, University of Southampton, 2014. https://eprints.soton.ac.uk/369980/.

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This thesis presents models for a graphene based field effect transistor (GFET). The graphene material has been widely studied since its synthesis in 2004 and the material holds promise for the next generation electronic applications. Therefore, there is a need to model its device characteristics. In this respect the contributions presented here are, firstly, a SPICE-compatible model for both dual gate and single gate graphene transistors. The derivation of the carrier transport of both hole and electron conduction results in a set of analytical equations. These derivations cover the three ide
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Xiao, Yang. "Circuit optimisation using device layout motifs." Thesis, University of York, 2015. http://etheses.whiterose.ac.uk/9464/.

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Circuit designers face great challenges as CMOS devices continue to scale to nano dimensions, in particular, stochastic variability caused by the physical properties of transistors. Stochastic variability is an undesired and uncertain component caused by fundamental phenomena associated with device structure evolution, which cannot be avoided during the manufacturing process. In order to examine the problem of variability at atomic levels, the 'Motif' concept, defined as a set of repeating patterns of fundamental geometrical forms used as design units, is proposed to capture the presence of st
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Rakheja, Shaloo. "Interconnects for post-CMOS devices: physical limits and device and circuit implications." Diss., Georgia Institute of Technology, 2012. http://hdl.handle.net/1853/45866.

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The objective of this dissertation is to classify the opportunities, advantages, and limits of novel interconnects for post-CMOS logic that can augment or eventually replace the CMOS logic. Post-CMOS devices are envisaged on the idea of using state variables other than the electron charge to store and manipulate information. In the first component of the thesis, a comprehensive analysis of the performance and the energy dissipation of novel logic based on various state variables is conducted, and it is demonstrated that the interconnects will continue to be a major challenge even for post-CMOS
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Odame, Kofi. "Exploiting device nonlinearity in analog circuit design." Diss., Atlanta, Ga. : Georgia Institute of Technology, 2008. http://hdl.handle.net/1853/29751.

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Thesis (Ph.D)--Electrical and Computer Engineering, Georgia Institute of Technology, 2009.<br>Committee Chair: Hasler, Paul; Committee Member: Anderson, David; Committee Member: Butera, Robert; Committee Member: Minch, Bradley; Committee Member: Taylor, David. Part of the SMARTech Electronic Thesis and Dissertation Collection.
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Hu, Bo. "Model compiler driven device modeling and circuit simulation /." Thesis, Connect to this title online; UW restricted, 2006. http://hdl.handle.net/1773/6054.

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Yu, Chuanzhao. "STUDY OF NANOSCALE CMOS DEVICE AND CIRCUIT RELIABILITY." Doctoral diss., University of Central Florida, 2006. http://digital.library.ucf.edu/cdm/ref/collection/ETD/id/3551.

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The development of semiconductor technology has led to the significant scaling of the transistor dimensions -The transistor gate length drops down to tens of nanometers and the gate oxide thickness to 1 nm. In the future several years, the deep submicron devices will dominate the semiconductor industry for the high transistor density and the corresponding performance enhancement. For these devices, the reliability issues are the first concern for the commercialization. The major reliability issues caused by voltage and/or temperature stress are gate oxide breakdown (BD), hot carrier effects (H
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DI, GIACOMO Valeria. "ELECTRON DEVICE NONLINEAR MODELLING FOR MICROWAVE CIRCUIT DESIGN." Doctoral thesis, Università degli studi di Ferrara, 2009. http://hdl.handle.net/11392/2389216.

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The electron device modelling is a research topic of great relevance, since the performances required to devices are continuously increasing in terms of frequency, power and linearity: new technologies are affirming themselves, bringing new challenges for the modelling community. In addition, the use of monolithic microwave integrated circuits (MMIC) is also increasing, making necessary the availability, in the circuit design phase, of models which are computationally efficient and at the same more and more accurate. The importance of modelling is even more evident by thinking at the wid
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Feng, Hong. "Impact of atomistic device variability on analogue circuit design." Thesis, University of Glasgow, 2011. http://theses.gla.ac.uk/3074/.

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Scaling of complementary metal-oxide-semiconductor (CMOS) technology has benefited the semiconductor industry for almost half a century. For CMOS devices with a physical gate-length in the sub-100 nm range, extreme device variability is introduced and has become a major stumbling block for next generation analogue circuit design. Both opportunities and challenges have therefore confronted analogue circuit designers. Small geometry device can enable high-speed analogue circuit designs, such as data conversion interfaces that can work in the radio frequency range. These designs can be co-integra
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Yakopcic, Chris. "Memristor Device Modeling and Circuit Design for Read Out Integrated Circuits, Memory Architectures, and Neuromorphic Systems." University of Dayton / OhioLINK, 2014. http://rave.ohiolink.edu/etdc/view?acc_num=dayton1398725462.

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Litsios, James. "A modeling language for mixed circuit and semiconductor device simulation /." [S.l.] : [s.n.], 1996. http://e-collection.ethbib.ethz.ch/show?type=diss&nr=11412.

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Books on the topic "Circuit device"

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1954-, Rohdin Hans, ed. High-speed heterostructure devices: From device concepts to circuit modeling. Cambridge University Press, 2002.

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Gao, Jianjun. Optoelectronic Integrated Circuit Design and Device Modeling. John Wiley & Sons, Ltd, 2010. http://dx.doi.org/10.1002/9780470827369.

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Gao, Jianjun. Optoelectronic integrated circuit design and device modeling. Wiley, 2011.

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Trond, Ytterdal, and Shur Michael, eds. Introduction to device modeling and circuit simulation. Wiley, 1998.

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Tayal, Shubham, Billel Smaani, Shiromani Balmukund Rahi, Samir Labiod, and Zeinab Ramezani. Device Circuit Co-Design Issues in FETs. CRC Press, 2023. http://dx.doi.org/10.1201/9781003359234.

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J, Mergens Markus P. On-chip ESD protection in integrated circuits: Device physics, modeling, circuit simulation. Hartung-Gorre, 2001.

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Ytterdal, Trond, Yuhua Cheng, and Tor A. Fjeldly. Device Modeling for Analog and RF CMOS Circuit Design. John Wiley & Sons, Ltd, 2003. http://dx.doi.org/10.1002/0470863803.

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Balestra, Francis, and Gérard Ghibaudo, eds. Device and Circuit Cryogenic Operation for Low Temperature Electronics. Springer US, 2001. http://dx.doi.org/10.1007/978-1-4757-3318-1.

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Semenov, Oleg, Hossein Sarbishaei, and Manoj Sachdev. ESD Protection Device and Circuit Design for Advanced CMOS Technologies. Springer Netherlands, 2008. http://dx.doi.org/10.1007/978-1-4020-8301-3.

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Litsios, James. A modeling language for mixed circuit and semiconductor device simulation. Hartung-Gorre, 1996.

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Book chapters on the topic "Circuit device"

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Iezekiel, Stavros. "Equivalent Circuit Modelling." In Compound Semiconductor Device Modelling. Springer London, 1993. http://dx.doi.org/10.1007/978-1-4471-2048-3_8.

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Embabi, Sherif H. K., Abdellatif Bellaouar, and Mohamed I. Elmasry. "Device Modeling." In Digital BiCMOS Integrated Circuit Design. Springer US, 1993. http://dx.doi.org/10.1007/978-1-4615-3174-6_4.

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Bittner, Kai, Hans Georg Brachtendorf, Wim Schoenmaker, Christian Strohm, and Caren Tischendorf. "Coupled Circuit Device Simulation." In Scientific Computing in Electrical Engineering. Springer International Publishing, 2018. http://dx.doi.org/10.1007/978-3-319-75538-0_7.

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Howes, Michael J. "High Frequency Equivalent Circuit Models." In Semiconductor Device Modelling. Springer London, 1989. http://dx.doi.org/10.1007/978-1-4471-1033-0_10.

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Gu, Richard X., Khaled M. Sharaf, and Mohamed I. Elmasry. "Device Modeling." In High-Performance Digital VLSI Circuit Design. Springer US, 1996. http://dx.doi.org/10.1007/978-1-4615-2297-3_3.

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Embabi, Sherif H. K., Abdellatif Bellaouar, and Mohamed I. Elmasry. "Device Design Considerations." In Digital BiCMOS Integrated Circuit Design. Springer US, 1993. http://dx.doi.org/10.1007/978-1-4615-3174-6_3.

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Harrold, Christopher. "Advanced Circuit Components." In Practical Smart Device Design and Construction. Apress, 2020. http://dx.doi.org/10.1007/978-1-4842-5614-5_5.

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Harrold, Christopher. "Circuit Building Lab." In Practical Smart Device Design and Construction. Apress, 2020. http://dx.doi.org/10.1007/978-1-4842-5614-5_6.

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Clarke, Margaret E. "Equivalent Circuit Models for Silicon Devices." In Semiconductor Device Modelling. Springer London, 1989. http://dx.doi.org/10.1007/978-1-4471-1033-0_9.

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Gu, Richard X., Khaled M. Sharaf, and Mohamed I. Elmasry. "Device Design Considerations." In High-Performance Digital VLSI Circuit Design. Springer US, 1996. http://dx.doi.org/10.1007/978-1-4615-2297-3_2.

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Conference papers on the topic "Circuit device"

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Rai, Madhvendra, Abhijit Pethe, and Adrija Ghosh. "Simulation of a-IGZO TFT Device Using Finite Element Method." In 2025 Devices for Integrated Circuit (DevIC). IEEE, 2025. https://doi.org/10.1109/devic63749.2025.11012492.

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Kumar, Mukesh, Chhavi Rani, Anant Bharti, et al. "Investigation of FinFET in terms of Device Design, Performance, and its Challenges." In 2025 Devices for Integrated Circuit (DevIC). IEEE, 2025. https://doi.org/10.1109/devic63749.2025.11012504.

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Prajapati, Shivani, Priyanka Tripathi, and Koushik Dutta. "Parametric Optimization of Verilog-A code for Double-PHL of RRAM Device in a Step-by-Step Approach." In 2025 Devices for Integrated Circuit (DevIC). IEEE, 2025. https://doi.org/10.1109/devic63749.2025.11012324.

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Agarwal, Deergha, Zuber M. Patel, and Kirti Inamdar. "A 2.5 W Class-F Power Amplifier using Balanced Stub Harmonics on 150 nm GaN HEMT device for 5G Applications." In 2025 Devices for Integrated Circuit (DevIC). IEEE, 2025. https://doi.org/10.1109/devic63749.2025.11012296.

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Stephan, K. D. "New device/circuit integration." In IEEE Antennas and Propagation Society International Symposium 1992 Digest. IEEE, 1992. http://dx.doi.org/10.1109/aps.1992.221649.

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Gao, D. S., A. T. Yang, S. M. Kang, R. P. Bryan, M. E. Givens, and J. J. Coleman. "A Quantum-Well Laser Model for Circuit Simulation." In Numerical Simulation and Analysis in Guided-Wave Optics and Opto-Electronics. Optica Publishing Group, 1989. http://dx.doi.org/10.1364/gwoe.1989.sa5.

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Circuit simulation models for optical devices are much needed to analyze optical interconnects and properties of optoelectronic integrated circuits. [1] The issue of modeling semiconductor lasers has been addressed by several authors. Previously reported laser models have been mainly for conventional double heterostructure lasers. [2,3,4] However, few adequate models exist for quantum-well lasers. In fact, previous laser models developed for particular device design often fail when the device parameters are changed.
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Zahir, A., S. A. A. Zaidi, A. Pulimeno, et al. "Molecular transistor circuits: From device model to circuit simulation." In 2014 IEEE/ACM International Symposium on Nanoscale Architectures (NANOARCH). IEEE, 2014. http://dx.doi.org/10.1109/nanoarch.2014.6880492.

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Gupta, Mridula. "GaN HEMT Device Model Development for Implementation of Different Circuit." In 16th International Seminar On Power Semiconductors. Czech Technical University in Prague, 2023. http://dx.doi.org/10.14311/isps.2023.004.

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GaN HEMT devices (with different dimensions) have been investigated using 16- and 22-element smallsignal equivalent circuit Model. The percentage error is estimated to show the difference in extracted parameters using 16- and 22-element small-signal equivalent circuit model which assist in choosing the accurate small-signal model for large gate periphery GaN HEMTs. For device’s low power operation linear models are sufficient. In order to achieve higher certainty for high power applications, the nonlinear behaviour of the device must be considered. While generating the large-signal device mode
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Albert, D. E., L. Fischer, and S. Beck. "Nanoelectronic Analog Circuit PFA – The Return of Circuit Level Probing." In ISTFA 2012. ASM International, 2012. http://dx.doi.org/10.31399/asm.cp.istfa2012p0077.

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Abstract Circuit level probing is testing, measuring, or characterizing the operation of an electronic circuit. It reveals the true operation of a circuit, and takes the next step beyond electrical engineering design and circuit simulation. This paper presents the return of circuit level probing in nanoelectronics by means of SEM based nanoprobing. It provides information on the process of characterizing resistance matching, diode matching, Op Amp offset matching, and mirrored current. Circuit level probing, using a SEM based nanoprober, identified the problem to be poor matching between the c
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Axelrad, V., H. Hayashi, and I. Kurachi. "Physical circuit-device simulation of ESD and power devices." In 2011 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD). IEEE, 2011. http://dx.doi.org/10.1109/sispad.2011.6035079.

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Reports on the topic "Circuit device"

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KEITER, ERIC R., SCOTT A. HUTCHINSON, ROBERT J. HOEKSTRA, ERIC LAMONT RANKIN, THOMAS V. RUSSO, and LON J. WATERS. Computational Algorithms for Device-Circuit Coupling. Office of Scientific and Technical Information (OSTI), 2003. http://dx.doi.org/10.2172/808615.

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Meza, J. C., and J. F. Grcar. DANCIR (Device and Circuit Simulator): A three-dimensional steady-state semiconductor device simulator. Office of Scientific and Technical Information (OSTI), 1990. http://dx.doi.org/10.2172/7020231.

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Tow Leong, Tiang, Mohd Saufi Ahmad, Ang Qian Yee, et al. HANDBOOK OF ELECTRICAL SYSTEM DESIGN FOR NON-DOMESTIC BUILDING. Penerbit Universiti Malaysia Perlis, 2023. http://dx.doi.org/10.58915/techrpt2023.001.

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This technical report presents the electrical system installation design for development of a factory with 1 storey and 2 storey of offices. Firstly, the general methodology of designing the electrical system are elaborated in this report. As overall, the methodologies in designing the components of the electrical system are explained and elaborated, which included: (a) load and maximum demand estimation; (b) miniature circuit breaker (MCB) selection; (c) moulded case circuit breaker (MCCB) selection; (d) air circuit breaker (ACB) selection, (e) residual current device (RCD) selection; (f) pro
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Yunovich. L52265 User Manual for Electrical Isolation Devices. Pipeline Research Council International, Inc. (PRCI), 2004. http://dx.doi.org/10.55274/r0010183.

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There is no specific guidance available on the use of electrical isolation devices and how to protect against faults. Because of this, the practice of isolation is varied, which at times may lead to a possible loss of pipeline integrity or electrical safety hazards. Electrically isolating devices are common in cathodically protected piping systems. They can be used to electrically isolate the pipeline from terminal facilities and pumping systems, to divide the pipeline into sections for individual CP, or to manage stray current interference. NACE International defines these devices as an Elect
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Butler, Kathryn M. Computational model of dissipation of oxygen from an outward leak of a closed-circuit breathing device. National Institute of Standards and Technology, 2007. http://dx.doi.org/10.6028/nist.tn.1484.

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Weinschenk, Craig, Daniel Madrzykowski, and Paul Courtney. Impact of Flashover Fire Conditions on Exposed Energized Electrical Cords and Cables. UL Firefighter Safety Research Institute, 2019. http://dx.doi.org/10.54206/102376/hdmn5904.

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A set of experiments was conducted to expose different types of energized electrical cords for lamps, office equipment, and appliances to a developing room fire exposure. All of the cords were positioned on the floor and arranged in a manner to receive a similar thermal exposure. Six types of cords commonly used as power supply cords, extension cords, and as part of residential electrical wiring systems were chosen for the experiments. The non-metallic sheathed cables (NMB) typically found in residential electrical branch wiring were included to provide a link to previous research. The basic t
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Kolodzey, James. Device Technologies for Semiconductor Spintronic Circuits. Defense Technical Information Center, 2012. http://dx.doi.org/10.21236/ada560241.

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Richter, Shachar E. Molecular-Based Devices and Circuits. Defense Technical Information Center, 2008. http://dx.doi.org/10.21236/ada524520.

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Allen, J. Conversion of Algorithms to Custom Integrated Circuit Devices. Defense Technical Information Center, 1985. http://dx.doi.org/10.21236/ada151288.

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Averin, D. V. Semiconductor Single-Electron Digital Devices and Circuits. Defense Technical Information Center, 1993. http://dx.doi.org/10.21236/ada278338.

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