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Relevant bibliographies by topics / Circuit device / Dissertations / Theses

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Dissertations / Theses on the topic 'Circuit device'

Author: Grafiati

Published: 28 May 2022

Last updated: 30 July 2025

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1

Umoh, Ime J. "Graphene FET circuit-level device modelling." Thesis, University of Southampton, 2014. https://eprints.soton.ac.uk/369980/.

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This thesis presents models for a graphene based field effect transistor (GFET). The graphene material has been widely studied since its synthesis in 2004 and the material holds promise for the next generation electronic applications. Therefore, there is a need to model its device characteristics. In this respect the contributions presented here are, firstly, a SPICE-compatible model for both dual gate and single gate graphene transistors. The derivation of the carrier transport of both hole and electron conduction results in a set of analytical equations. These derivations cover the three ide

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2

Xiao, Yang. "Circuit optimisation using device layout motifs." Thesis, University of York, 2015. http://etheses.whiterose.ac.uk/9464/.

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Circuit designers face great challenges as CMOS devices continue to scale to nano dimensions, in particular, stochastic variability caused by the physical properties of transistors. Stochastic variability is an undesired and uncertain component caused by fundamental phenomena associated with device structure evolution, which cannot be avoided during the manufacturing process. In order to examine the problem of variability at atomic levels, the 'Motif' concept, defined as a set of repeating patterns of fundamental geometrical forms used as design units, is proposed to capture the presence of st

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3

Rakheja, Shaloo. "Interconnects for post-CMOS devices: physical limits and device and circuit implications." Diss., Georgia Institute of Technology, 2012. http://hdl.handle.net/1853/45866.

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The objective of this dissertation is to classify the opportunities, advantages, and limits of novel interconnects for post-CMOS logic that can augment or eventually replace the CMOS logic. Post-CMOS devices are envisaged on the idea of using state variables other than the electron charge to store and manipulate information. In the first component of the thesis, a comprehensive analysis of the performance and the energy dissipation of novel logic based on various state variables is conducted, and it is demonstrated that the interconnects will continue to be a major challenge even for post-CMOS

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4

Odame, Kofi. "Exploiting device nonlinearity in analog circuit design." Diss., Atlanta, Ga. : Georgia Institute of Technology, 2008. http://hdl.handle.net/1853/29751.

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Thesis (Ph.D)--Electrical and Computer Engineering, Georgia Institute of Technology, 2009.<br>Committee Chair: Hasler, Paul; Committee Member: Anderson, David; Committee Member: Butera, Robert; Committee Member: Minch, Bradley; Committee Member: Taylor, David. Part of the SMARTech Electronic Thesis and Dissertation Collection.

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5

Hu, Bo. "Model compiler driven device modeling and circuit simulation /." Thesis, Connect to this title online; UW restricted, 2006. http://hdl.handle.net/1773/6054.

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6

Yu, Chuanzhao. "STUDY OF NANOSCALE CMOS DEVICE AND CIRCUIT RELIABILITY." Doctoral diss., University of Central Florida, 2006. http://digital.library.ucf.edu/cdm/ref/collection/ETD/id/3551.

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The development of semiconductor technology has led to the significant scaling of the transistor dimensions -The transistor gate length drops down to tens of nanometers and the gate oxide thickness to 1 nm. In the future several years, the deep submicron devices will dominate the semiconductor industry for the high transistor density and the corresponding performance enhancement. For these devices, the reliability issues are the first concern for the commercialization. The major reliability issues caused by voltage and/or temperature stress are gate oxide breakdown (BD), hot carrier effects (H

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7

DI, GIACOMO Valeria. "ELECTRON DEVICE NONLINEAR MODELLING FOR MICROWAVE CIRCUIT DESIGN." Doctoral thesis, Università degli studi di Ferrara, 2009. http://hdl.handle.net/11392/2389216.

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The electron device modelling is a research topic of great relevance, since the performances required to devices are continuously increasing in terms of frequency, power and linearity: new technologies are affirming themselves, bringing new challenges for the modelling community. In addition, the use of monolithic microwave integrated circuits (MMIC) is also increasing, making necessary the availability, in the circuit design phase, of models which are computationally efficient and at the same more and more accurate. The importance of modelling is even more evident by thinking at the wid

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8

Feng, Hong. "Impact of atomistic device variability on analogue circuit design." Thesis, University of Glasgow, 2011. http://theses.gla.ac.uk/3074/.

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Scaling of complementary metal-oxide-semiconductor (CMOS) technology has benefited the semiconductor industry for almost half a century. For CMOS devices with a physical gate-length in the sub-100 nm range, extreme device variability is introduced and has become a major stumbling block for next generation analogue circuit design. Both opportunities and challenges have therefore confronted analogue circuit designers. Small geometry device can enable high-speed analogue circuit designs, such as data conversion interfaces that can work in the radio frequency range. These designs can be co-integra

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9

Yakopcic, Chris. "Memristor Device Modeling and Circuit Design for Read Out Integrated Circuits, Memory Architectures, and Neuromorphic Systems." University of Dayton / OhioLINK, 2014. http://rave.ohiolink.edu/etdc/view?acc_num=dayton1398725462.

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10

Litsios, James. "A modeling language for mixed circuit and semiconductor device simulation /." [S.l.] : [s.n.], 1996. http://e-collection.ethbib.ethz.ch/show?type=diss&nr=11412.

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11

Lim, T. C. "Device and circuit simulation of nanoscale double gate SOI transistors." Thesis, Queen's University Belfast, 2008. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.484976.

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This thesis addresses the design and application of a state-of-the-art nano-scaled Undoped-Thinned Body (UTE) Double Gate Silicon-On-Insulator (DGSOI) for digital and RF applications using TCAD. A novel structure ofooSOI, which focuses on the source/drain extension regions, has been proposed. The research covers the characterizations, optimisations and application of this nano-scaled ooSOI incorporating gate underlap concept by way ofanalytical investigations, numerical device simulations and circuit simulations. MixedMode simulator; a sub-module from ATLAS Silvaco' allows the effect of signif

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12

Abuelmaatti, Ali. "RF techniques for IEEE 802.15.4 : circuit design and device modelling." Thesis, University of Glasgow, 2008. http://theses.gla.ac.uk/243/.

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The RF circuitry in the physical layer of any wireless communication node is arguably its most important part. The front-end radio is the hardware that enables communication by transmitting and receiving information. Without a robust and high performance front-end, all other higher layers of signal processing and data handling in a wireless network are irrelevant. This thesis investigates the radio circuitry of wireless-networked nodes, and introduces several proposals for improvement. As an emerging market, analysis starts by examining available and ratified network standards suitable for low

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13

ZAHIR, ALI. "Molecular FET: From Device Modeling to Circuit Design and Simulation." Doctoral thesis, Politecnico di Torino, 2015. http://hdl.handle.net/11583/2598379.

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Molecular devices can play an important role in emerging future nanoelectronics with advantages in terms of functional density and integration. Recently, molecular electronics has gained a great interest from both theoretical and applied electronics point of view. The research has focused on the better understanding of basic transport properties of these devices. A lot of work has been going on in the development of designs based on molecular devices. the analysis of molecular structures involving the integration of many transistors is limited by the lack of an accurate and computationally eff

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14

Lau, Mark C. "Small Signal Equivalent Circuit Extraction From A Gallium Arsenide MESFET Device." Thesis, Virginia Tech, 1997. http://hdl.handle.net/10919/36952.

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The development of microwave Gallium Arsenide Metal Semiconductor Field Effect Transistor (MESFET) devices has enabled the miniaturization of pagers, cellular phones, and other electronic devices. With these MESFET devices comes the need to model them. This thesis extracts a small signal equivalent circuit model from a Gallium Arsenide MESFET device. The approach taken in this thesis is to use measured S- parameters to extract a small signal equivalent circuit model by optimization. Small signal models and S-parameters are explained. The Simplex Method is used to optimize the smal

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15

Diestelhorst, Ryan M. "Silicon-germanium BiCMOS device and circuit design for extreme environment applications." Thesis, Atlanta, Ga. : Georgia Institute of Technology, 2009. http://hdl.handle.net/1853/28180.

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Thesis (M. S.)--Electrical and Computer Engineering, Georgia Institute of Technology, 2009.<br>Committee Chair: Cressler, John; Committee Member: Papapolymerou, John; Committee Member: Ralph, Stephen.

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16

Kanhaiya, Pritpal. "Three-dimensional device and circuit architectures : new systems with new nanotechnologies." Thesis, Massachusetts Institute of Technology, 2019. https://hdl.handle.net/1721.1/122552.

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Thesis: S.M., Massachusetts Institute of Technology, Department of Electrical Engineering and Computer Science, 2019<br>Cataloged from PDF version of thesis.<br>Includes bibliographical references (pages 35-39).<br>Physical scaling of silicon-based field-effect transistors (FETs) has been a major driving force to improve computing energy efficiency (quantified by the energy-delay product, EDP, the product of energy consumption and circuit delay) for decades. However, continued silicon scaling is becoming increasingly challenging. This is motivating the search for beyond-silicon nanotechnologie

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17

Tan, Michael Loong Peng. "Device and circuit-level models for carbon nanotube and graphene nanoribbon transistors." Thesis, University of Cambridge, 2011. https://www.repository.cam.ac.uk/handle/1810/245117.

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Metal-oxide semiconductor field-effect transistor (MOSFET) scaling throughout the years has enabled us to pack million of MOS transistors on a single chip to keep in pace with Moore’s Law. After forty years of advances in integrated circuit (IC) technology, the scaling of silicon (Si) MOSFET has entered the nanometer dimension with the introduction of 90 nm high volume manufacturing in 2004. The latest technological advancement has led to a low power, high-density and high-speed generation of processor. Nevertheless, the scaling of the Si MOSFET below 22 nm may soon meet its’ fundamental physi

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18

Weisz, Mario. "Electrothermal device-to-circuit interactions for half THz SiGe∶C HBT technologies." Thesis, Bordeaux 1, 2013. http://www.theses.fr/2013BOR14909/document.

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Ce travail concerne les transistors bipolaires à hétérogène TBH SiGe. En particulier, l'auto-échauffement des transistors unitaires et le couplage thermique avec leurs plus proches voisins périphériques sont caractérisés et modélisés. La rétroaction électrothermique intra- et inter-transistor est largement étudiée. En outre, l’impact des effets thermiques sur la performance de deux circuits analogiques est évalué. L'effet d'autoéchauffement est évalué par des mesures à basse fréquence et des mesures impulsionnelles DC et AC. L'auto-échauffement est diminué de manière significative en utilisant

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19

Worthington, Emma. "Piezoelectric energy harvesting : enhancing power output by device optimisation and circuit techniques." Thesis, Cranfield University, 2010. http://dspace.lib.cranfield.ac.uk/handle/1826/4579.

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Energy harvesting; that is, harvesting small amounts of energy from environmental sources such as solar, air flow or vibrations using small-scale (≈1cm 3 ) devices, offers the prospect of powering portable electronic devices such as GPS receivers and mobile phones, and sensing devices used in remote applications: wireless sensor nodes, without the use of batteries. Numerous studies have shown that power densities of energy harvesting devices can be hundreds of µW; however the literature also reveals that power requirements of many electronic devices are in the mW range. Therefore, a key challe

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20

Ayob, Masri. "Optimisation of surface mount device placement machine in printed circuit board assembly." Thesis, University of Nottingham, 2005. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.415021.

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21

Gebara, Edward. "Temperature dependent RF and optical device characterization and its application to circuit design." Diss., Georgia Institute of Technology, 2003. http://hdl.handle.net/1853/15760.

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22

Blanchard, Roxann Russell. "Recovered energy logic--device optimization for circuit implementation in silicon and heterostructure technologies." Thesis, Massachusetts Institute of Technology, 1994. http://hdl.handle.net/1721.1/34066.

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Thesis (M.S.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 1994.<br>Includes bibliographical references (p. 91-93).<br>by Roxann Russell Blanchard.<br>M.S.

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23

Quinn, Michael Joseph. "New physical polysilicon thin-film transistor models for device characterisation and circuit design." Thesis, University of Cambridge, 1996. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.627621.

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24

Wan, Bo. "MCAST : automatic device modeling in model compiler for efficient and accurate circuit simulation /." Thesis, Connect to this title online; UW restricted, 2004. http://hdl.handle.net/1773/5959.

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25

MEHDY, MALIK ASHTER. "Simulation and Modeling of Silicon Based Emerging Nanodevices: From Device to Circuit Level." Doctoral thesis, Politecnico di Torino, 2018. http://hdl.handle.net/11583/2711314.

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Nanostructure based devices are very promising candidates for the emerging nanotechnologies with advantage in terms of power consumption and functional density. Nanowire Field Effect Transistor (NWFET) and Single Electron Transistor (SET) are the focus of this work. The serious challenges faced by the MOSFET due to scaling limits can be solved by these devices. NWFET provides better gate control and overcomes the short channel effects. SET operates in the quantum confinement regime where the basic operation of MOSFET becomes a challenge. SET works better when the dimensions are small en

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26

Ramasamy, Lakshminarayanan. "First Order Mobility Independent ASIC for a Point-of-Care In-Vitro Diagnostic Device." University of Cincinnati / OhioLINK, 2012. http://rave.ohiolink.edu/etdc/view?acc_num=ucin1326296847.

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27

Lee, Seung Bae. "An inductively powered multichannel wireless implantable neural recording system (WINeR)." Diss., Georgia Institute of Technology, 2014. http://hdl.handle.net/1853/54009.

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A multi-channel wireless implantable neural recording (WINeR) system for electrophysiology and behavioral neuroscience research applications was proposed. The system is composed of two units: a system-on-a-chip (SoC) transmitter (Tx) unit and a receiver (Rx) unit. In the Tx unit, the outputs are combined with marker signals and modulated into pulse widths after the neural signals are amplified and filtered by an array of low-noise amplifiers (LNA). The next step involves time-division multiplexing (TDM) of pulse-width modulation (PWM) signals. The TDM-PWM signal drives RF transmitter block and

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28

Izzard, Martin John. "The poly-crystalline silicon thin-film transistor as a circuit device in display applications." Thesis, University of Cambridge, 1990. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.358657.

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29

Deng, Jie. "Device modeling and circuit performance evaluation for nanoscale devices : silicon technology beyond 45 nm node and carbon nanotube field effect transistors /." May be available electronically:, 2007. http://proquest.umi.com/login?COPT=REJTPTU1MTUmSU5UPTAmVkVSPTI=&clientId=12498.

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30

Moen, Kurt Andrew. "Predictive modeling of device and circuit reliability in highly scaled CMOS and SiGe BiCMOS technology." Diss., Georgia Institute of Technology, 2012. http://hdl.handle.net/1853/44700.

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The advent of high-frequency silicon-based technologies has enabled the design of mixed-signal circuits that incorporate analog, RF, and digital circuit components to build cost-effective system-on-a-chip solutions. Emerging applications provide great incentive for continued scaling of transistor performance, requiring careful attention to mismatch, noise, and reliability concerns. If these mixed-signal technologies are to be employed within space-based electronic systems, they must also demonstrate reliability in radiation-rich environments. SiGe BiCMOS technology in particular is positioned

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31

Liu, Yi. "STUDY OF OXIDE BREAKDOWN, HOT CARRIER AND NBTI EFFECTS ON MOS DEVICE AND CIRCUIT RELIABILITY." Doctoral diss., University of Central Florida, 2005. http://digital.library.ucf.edu/cdm/ref/collection/ETD/id/3550.

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As CMOS device sizes shrink, the channel electric field becomes higher and the hot carrier (HC) effect becomes more significant. When the oxide is scaled down to less than 3 nm, gate oxide breakdown (BD) often takes place. As a result, oxide trapping and interface generation cause long term performance drift and related reliability problems in devices and circuits. The RF front-end circuits include low noise amplifier (LNA), local oscillator (LO) and mixer. It is desirable for a LNA to achieve high gain with low noise figure, a LO to generate low noise signal with sufficient output power, wide

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32

Chen, Hsiao-chin, and 陳筱青. "RF Device Modeling and Circuit Design." Thesis, 2000. http://ndltd.ncl.edu.tw/handle/00858776513167054401.

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碩士<br>國立臺灣大學<br>電機工程學研究所<br>88<br>A novel theory based on dual-feedback circuit methodology is proposed to explain the kink phenomenon of transistor scattering parameter S22. Our results show that the output impedance of all transistors exhibited as a series RC circuit at low frequencies and a parallel RC circuit at high frequencies. It is this inherent ambivalent characteristic of the output impedance that caused the appearance of kink phenomenon of S22 in a Smith chart. Our model not only could predict the behavior of S22 but also could calculate all the S parameters accurately. A simple met

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33

Variar, Harsha B. "Device-Circuit Reliability Co-Design in High voltage and Power devices." Thesis, 2022. https://etd.iisc.ac.in/handle/2005/5875.

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For the last four decades, silicon CMOS technology has captured a significant share in IC, smart power IC, SoC, and the power device market. But there is aggressive research on other materials such as graphene & similar 2D materials and wideband gap materials. But, several aspects, including the fabrication process to improve device performance [7,9,12,13], understanding the device reliability physics [8,10,11], interconnection and packaging, need to be matured before these compound materials take the limelight. Besides these, a fab set-up for large scale production requires high NRE capital.

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34

Teng, Chin-Lin, and 鄧欽霖. "An Equivalent Circuit Approach to Mixed-level Device and Circuit Simulation." Thesis, 1997. http://ndltd.ncl.edu.tw/handle/46304652823872387492.

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碩士<br>國立中央大學<br>電機工程學系<br>85<br>This thesis presents an equivalent circuit approach for one-and two-dimensional numerical mixed-level device and circuit simulation. In such an equivalent circuit approach, Poisson's andContinuity equations are formulated into a subcircuit format suitablefor general circuit simulators. Different from conventional approaches,our approach is conceptually simple and the extension of this model tothree-dimensional semiconductor simulation is just straightforward.

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35

Lin, Abatie Wei-Cheng, and 林韋丞. "Device Degradation Modeling and Circuit Reliability Evaluation for CMOS Radio Frequency Integrated Circuit." Thesis, 2005. http://ndltd.ncl.edu.tw/handle/29172193201442715691.

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博士<br>國立清華大學<br>電子工程研究所<br>93<br>Recently, CMOS device cutoff frequency and maximum oscillation frequency rise to Giga hertz due to the aggressively scaling of semiconductor technologies. Therefore, the highly integrated circuits combing both analog and digital circuits become possible. With the increasing complexity in circuit functionalities, circuit reliability testing and evaluation can be no longer following the conventional method. Conventional reliability assurances through the setting a safe operation region by device lifetime projection is insufficient to meet the demand of today’s IC

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36

Dudar, Taras. "Algorithms and simulators for coupled device/circuit simulation." Thesis, 2002. http://hdl.handle.net/1957/31850.

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Algorithms and simulators comprised of SPICE3 as a circuit level simulator and two device simulators EOFLOW and PROPHET for accurate simulation of new types of devices are presented in this thesis. An integration of EOFLOW with SPICE3 creates a capability for efficient simulation of a system containing interconnected electroosmotic flow channels together with control electronics. Using this simulator, an accurate simulation of a complex interconnection of channels has been performed. In addition, various flow control schemes have been evaluated for their effectiveness. Coupling of PROPHET and

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37

Hong, Guo-Chin, and 洪國欽. "Development of Template Circuit and 2D Device Simulator." Thesis, 2006. http://ndltd.ncl.edu.tw/handle/rt7kpv.

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碩士<br>國立中央大學<br>電機工程研究所<br>94<br>In this thesis, we develop two template simulators. First simulator is the template transient circuit simulator (TR_CKT). It includes many circuit elements. The user can use TR_CKT for circuit application. Second simulator is the template transient device simulator (TR_DEV2D). The principle of the TR_DEV2D is to formulate Poisson’s and continuity equations into the equivalent-circuit model. It can be used to simulate the semiconductor device and mixed-level application. We have developed the format of input files for the two simulators. The user can follow the

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38

Wang, Ming-Fa, and 王明發. "Circuit Analysis and Implementation of Mobile Handset Device." Thesis, 2011. http://ndltd.ncl.edu.tw/handle/xf2wp4.

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碩士<br>國立臺北科技大學<br>電腦與通訊研究所<br>99<br>This thesis specifies the suggestions for integrations of mobile headset device, it also includes the test specifications and placements of main components, and analyzes the layout rules for baseband, RF, audio, and antenna. The present mobile headset devices are mostly composed of the four parts above. Because of the current trend appears that the wireless charging is booming quickly, the researches of wireless charging are also written in the thesis. The every part of the above hardware circuits decides the success or failure for a complete product. Theref

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39

TSENG, HSIEN-CHEN, and 曾献程. "Implementation of A Track Circuit Information Display Device." Thesis, 2017. http://ndltd.ncl.edu.tw/handle/96v98t.

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碩士<br>國立高雄第一科技大學<br>電子工程系碩士在職專班<br>105<br>This study is to develop a dedicated monitoring equipment to be mounted on various devices and pathways. The development process includes drive circuit design, signal analysis, analysis, restoration, etc. The signal was transformed by computer programs and human-machine interface platform and then analyzed by analytic software to obtain the information about railroad electricity circuit and responding equipment. Therefore, these signals can be read and analyzed in the equipment room of traffic signs without staff on site to inspect the railroad electri

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Ming-Hsin, Yu. "Strain-enhanced Device and Circuit for Optical Communication System." 2005. http://www.cetd.com.tw/ec/thesisdetail.aspx?etdun=U0001-2407200516001400.

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41

Wang, Binan. "Device characterization and analog circuit design for heterojunction FETs." Thesis, 1993. http://hdl.handle.net/1957/37049.

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Present day data processing technology requires very high speed signal processing and data conversion rates. Traditionally, these circuits have been implemented in silicon MOS technology, whose high speed performance is limited, due to inherent material properties. Though relatively immature compared to silicon technology, GaAs integrated circuit technology appears to be a potential vehicle for realizing high-speed circuits because of its high electron mobility and low parasitic capacitance. One major drawback of GaAs technology has been the lack of complementary technology in contrast to sili

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Chen, kuan-hao, and 陳冠豪. "High Frequency Deep-Submicron CMOS device and circuit modeling." Thesis, 2000. http://ndltd.ncl.edu.tw/handle/02579999569987998973.

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碩士<br>長庚大學<br>電機工程研究所<br>88<br>As the gate lengths of silicon MOSFET’s become smaller and smaller, The conventional device model is not accurate in the GHz range. Because BSIM3v3 has been widely accepted as a standard CMOS model for low and medium frequency applications, we must find a method to solve this problem. Recent research has proposed a high frequency device model by adding a complicated substrate resistance network and modifying the BSIM3v3 source code. So we study the sensitivities of S-parameter to each model parameter at 1GHz and some guide lines are given for parameter extraction

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43

WEI, WEN-JIE, and 魏文傑. "The ultra high voltage device design and circuit implement." Thesis, 2011. http://ndltd.ncl.edu.tw/handle/p7u6y5.

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碩士<br>萬能科技大學<br>工程科技研究所<br>99<br>This paper is for the purpose of designing an ultrahigh voltage lateral double-diffused metal oxide semiconductor field effect transistor (LDMOSFET). We add a P-top field ring and the different types of interdigitized polysilicon-metal floating field layer in the drift region to effectively reduce the surface field and further enhance the device breakdown voltage. Through the computer simulation, we figure out the breakdown voltage of the device and the optimized process parameters and layout structures. We implement the test device through the 0.8 micron 2P2M

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Yu, Ming-Hsin, and 余名薪. "Strain-enhanced Device and Circuit for Optical Communication System." Thesis, 2005. http://ndltd.ncl.edu.tw/handle/31489836713631147121.

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碩士<br>國立臺灣大學<br>電子工程學研究所<br>93<br>In this thesis, the basic concepts of mechanical/package strain technique and optical communication system are described. Then the focus will be on the construction and performance enhancement of the photo sensing device and analog circuit in the optical communication system receiver front-end. In chapter 3 and chapter 4, a photodetector with NMOS diode structure and a transimpedance amplifier (TIA) adopting NMOSFET active inductor are designed, and through tensile strain, their responsivity and bandwidth can be enhanced respectively. Chapter 5 introduces anot

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Huang, Hong Zheng, and 黃宏政. "Equivalent circuit model of VLSI BJT device in SPICE." Thesis, 1994. http://ndltd.ncl.edu.tw/handle/26331755274986949467.

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46

Hu, Yutao. "Steady-state analysis techniques for coupled device and circuit simulation." Thesis, 2004. http://hdl.handle.net/1957/29869.

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The focus of this work is on the steady-state analysis of RE circuits using a coupled device and circuit simulator. Efficient coupling algorithms for both the time-domain shooting method and the frequency-domain harmonic balance method have been developed. A modified Newton shooting method considerably improves the efficiency and reliability of the time-domain analysis. Three different implementation approaches of the harmonic balance method for coupled device and circuit simulation are investigated and implemented. These include the quasi-static, non-quasi-static, and modified-Volterra-series

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47

Divakar, Kiran. "Circuit design and device modeling of zinc-tin oxide TFTs." Thesis, 2011. http://hdl.handle.net/2152/ETD-UT-2011-05-3702.

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Amorphous Oxide Semiconductors (AOS) are widely being explored in the field of flexible and transparent electronics. In this thesis, solution processed zinc-tin oxide (ZTO) n-channel TFT based circuits are studied. Inverters, single stage amplifiers and ring oscillators are designed, fabricated and tested. 7-stage ring oscillators with output frequencies up to 106kHz and 5-stage ring oscillators with frequencies up to 75kHz are reported. A stable three stage op-amp with a buffered output is designed for a gain of 39.9dB with a unity gain frequency of 27.7kHz. A 7-stage ring oscillator with ou

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Pibultip, Pitak. "Evaluation of device of merit in microwave switching circuit design." Thesis, 1987. http://hdl.handle.net/10945/22782.

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Jhang, Wei-jie, and 張惟傑. "Analyzing Any Nonlinear Device and Circuit By Basic Linear Components." Thesis, 2009. http://ndltd.ncl.edu.tw/handle/79tzf7.

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碩士<br>國立中央大學<br>電機工程研究所<br>97<br>In this thesis, we develop a circuit simulator for nonlinear circuit simulation by using basic linear components. The basic linear components include voltage source, resistor, capacitor, inductor and voltage-control current source. The nonlinear circuit component is substituted by linear circuit component. We move the circuit parameters of non linear device from a function to the main program in order to make our program more readable. The nonlinear circuits include diode, BJT and Differential-amplifier pair. We also compare our simulation results with PSpice.

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Wu, Yang-Zheng, and 吳洋政. "A Differential Capacitive Sensing Circuit for CMOS-MEMS pressure device." Thesis, 2012. http://ndltd.ncl.edu.tw/handle/g66e9x.

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碩士<br>國立臺北科技大學<br>機電整合研究所<br>100<br>In this thesis, a new type of capacitor sensor composed of pressure and CMOS circuitry is proposed. The capacitor variation can be measured directly by means of the sensing circuit, which is composed of an impedance amplifier or a switched-capacitor amplifier. The goal of this sensor is to detect various blood vessel pressures. It also provides an effective way in applications of bio-sensors. Furthermore, an array-typed MEMS-Pressure sensor can be to detect blood vessel pressures in various pressure ranges, and it is desired to become a wearable or implantab

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