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Journal articles on the topic 'Circuit device'

Author: Grafiati

Published: 28 May 2022

Last updated: 30 July 2025

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1

Lee, Changhoon, Changwoo Han, and Changhwan Shin. "Inverter design with positive feedback field-effect transistors." Semiconductor Science and Technology 37, no. 3 (2022): 035014. http://dx.doi.org/10.1088/1361-6641/ac41e5.

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Abstract As the physical size of semiconductor devices continues to be aggressively scaled down, feedback field-effect transistors (FBFET) with a positive feedback mechanism among a few promising steep switching devices have received attention as next-generation switching devices. Conventional FBFETs have been studied to explore their device performance. However, this has been restricted to the case of single FBFET; basic circuit designs with FBFETs have not been investigated extensively. In this work, we propose an inverter circuit design with silicon-on-insulator (SOI) FBFETs; we verified th

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2

Wang, Lu, Hongyu Zhu, Ze Zuo, and Dianzhong Wen. "Full-function logic circuit based on egg albumen resistive memory." Applied Physics Letters 121, no. 24 (2022): 243505. http://dx.doi.org/10.1063/5.0124826.

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The logic gate is the basic unit of a digital circuit structure. The operation, memory, I/O, and other reading and writing functions of computer systems require logic circuits. Logic gates based on resistive memory can make existing integrated circuits denser, smaller, faster, and use fewer devices. In this paper, Al/polymethyl methacrylate (PMMA)/egg albumen (EA):Au nanoparticles/PMMA/Al multilayer biological resistive random access memory was prepared based on the natural biological material—egg albumen (EA). The device has bipolar switching behavior, a higher switching current ratio, a lowe

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3

Li, Bo, and Guoyong Shi. "A Native SPICE Implementation of Memristor Models for Simulation of Neuromorphic Analog Signal Processing Circuits." ACM Transactions on Design Automation of Electronic Systems 27, no. 1 (2022): 1–24. http://dx.doi.org/10.1145/3474364.

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Since the memristor emerged as a programmable analog storage device, it has stimulated research on the design of analog/mixed-signal circuits with the memristor as the enabler of in-memory computation. Due to the difficulty in evaluating the circuit-level nonidealities of both memristors and CMOS devices, SPICE-accuracy simulation tools are necessary for perfecting the art of neuromorphic analog/mixed-signal circuit design. This article is dedicated to a native SPICE implementation of the memristor device models published in the open literature and develops case studies of applying such a circ

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4

Біліщук В.Б., Середюк О.Є.,, Витвицька Л.А., and Боднар Р.Т. "ADVANTAGES OF VIRTUAL MODELING FOR THE DEVELOPMENT OF MEASURING DEVICES." Перспективні технології та прилади, no. 22 (September 8, 2023): 6–11. http://dx.doi.org/10.36910/10.36910/6775-2313-5352-2023-22-01.

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The relevance of using virtual modeling of devices for engineering design is considered. An analysis of the publication on the application of computerized design technologies in the processes of device development was made. The possibilities and ways of using computer modeling in the process of developing devices in the Proteus Design and SolidWorks software environments are indicated. In the Proteus Design software environment, you can simulate the operation of electrical circuits containing programmable devices: microcontrollers and microprocessors, as well as design a printed circuit board.

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Shkirdov, R. V., and Y. V. Zhukova. "Identification device circuit." ТЕНДЕНЦИИ РАЗВИТИЯ НАУКИ И ОБРАЗОВАНИЯ 79, no. 5 (2021): 142–45. http://dx.doi.org/10.18411/trnio-11-2021-222.

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This article deals with the description of the developed identification device circuit based on logical devices. The circuit under consideration can find its application in large warehouses to facilitate the task of finding the right products.

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Ni, Haiyan, Jianping Hu, Xuqiang Zhang, and Haotian Zhu. "The Optimizations of Dual-Threshold Independent-Gate FinFETs and Low-Power Circuit Designs." Journal of Circuits, Systems and Computers 29, no. 07 (2019): 2050114. http://dx.doi.org/10.1142/s0218126620501145.

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In this paper, a method of optimizing dual-threshold independent-gate FinFET devices is discussed, and the optimal circuit design is carried out by using these optimized devices. Dual-threshold independent-gate FinFETs include low threshold devices and high threshold devices. The low threshold device is equivalent to two merging parallel short-gate devices and high threshold device is equivalent to two merging series SG devices. We optimize the device mainly by selecting the appropriate gate work function, gate oxide thickness, silicon body thickness and so on. Our optimization is based on the

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Furutani, Katsushi, and Taizo Makino. "Influence of Matrix Circuit Switching Device Junction Capacitance on Piezoelectric Actuator Drive Performance." International Journal of Automation Technology 3, no. 3 (2009): 313–18. http://dx.doi.org/10.20965/ijat.2009.p0313.

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Piezoelectric actuators are widely used as fine-motion actuators for positioning devices. Current pulse driving reduces displacement hysteresis, and the drive circuit provides current pulses considered constant charge pulses to the piezoelectric actuator. The circuit for devices with multiple degrees of freedom using multiple piezoelectric actuators should be simple. Matrix circuits are used to drive liquid crystal displays to reduce the number of drive-circuit control signals and components. A group of 2 × 2 piezoelectric actuators was driven alternately using a 4-switch matrix circuit, and t

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8

Harirajkumar, J., and R. Shivakumar. "Enhancing Analog Performance in Nanometer FinFET Technology: Bridging the Device-Circuit Co-Design Gap for Low-Power Applications." Journal of Nanoelectronics and Optoelectronics 19, no. 12 (2024): 1277–87. https://doi.org/10.1166/jno.2024.3692.

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In modern electronics and communication systems, the major driving force have been primarily based on down-scaling the minimum transistor size according to Moore0 s law. Furthermore, the efforts to overcome limitations of planar technology have led to development of non-traditional architecture such as Fin shaped Field Effect Transistor (FinFET) and other Multigate devices to achieve compactness. A FinFET, self-aligned process is more resilient to short channel effects in nanometer technology node. In addition to the non-planar nature of multi-gate devices, several technology integration chall

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9

Li, Shuo, Nan Pan, Sen Gao, and Lei Li. "Three State Output Module and Digital Switch Circuit Based on Threshold Memristor." Journal of Physics: Conference Series 2395, no. 1 (2022): 012021. http://dx.doi.org/10.1088/1742-6596/2395/1/012021.

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Abstract A memristor is a new electronic device with small volumes and small fluctuations. As a two-terminal device, it is mainly characterized by non-volatility and nanoscale characteristic size. Memristors can also calculate and store at the same time, which has a broad application prospect in logic circuits. Traditional integrated circuit technology has been very mature. And CMOS technology has almost reached the limit of physical size. Compared with traditional circuit components, memristor devices are compatible with CMOS circuits with their fast computing speed, low power consumption, an

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10

Gan, Kwang Jow, Zheng Jie Jiang, Cher Shiung Tsai, et al. "Design of NDR-Based Oscillators Suitable for the Nano-Based BiCMOS Technique." Applied Mechanics and Materials 328 (June 2013): 669–73. http://dx.doi.org/10.4028/www.scientific.net/amm.328.669.

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We present three oscillator designs using the negative-differential-resistance (NDR) circuit which is composed of several Si-based metal-oxide-semiconductor field-effect transistor (MOS) devices and one SiGe-based heterojunction bipolar transistor (HBT) devices. These oscillator circuits are composed of the NDR circuit, resistor, inductor, and capacitor. The oscillation frequencies are about several GHz based on the HSPICE simulation results. The circuits are designed using a standard 0.18 μm BiCMOS technique. Because our circuits are mainly made of a BiCMOS-NDR circuit that is different from

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11

Ruan, Zihan. "Reasons and solutions for device mismatch and structural mismatch in electronic circuits." Applied and Computational Engineering 101, no. 1 (2024): 207–12. http://dx.doi.org/10.54254/2755-2721/101/20241045.

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Abstract. Integrated circuits have become one of the most popular industries in recent years, and more and more fields are interacting with it. With the passage of time, various new circuit designs have been created, and layout designs continue to advance. People are increasingly concerned about the accuracy and stability of devices, and the use of devices is also increasing. Circuit mismatch is starting to be a concern. This article based on three levels, discussed the most basic device-level resistor and capacitor mismatches at first, then talked about the circuit structures that improve the

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Bosneaga, V., and V. Suslov. "Investigation of Symmetrical Modes of Operation and Calculation of the Installed Capacity of Phase-Shifting Transformer, Based on Hexagon Connection." Problemele energeticii regionale 4, no. 48 (2020): 11–22. https://doi.org/10.5281/zenodo.4316631.

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The scope of the work is to study the steady-state symmetrical load modes of operation of a new promising phase-regulating transformer circuit. This allows obtaining the value of the designed capacity of device. The device is based on a three-phase transformer windings connection into hexagon circuit, equipped with additional three phase regulating autotransformer, connected to hexagon circuit in a special manner. Besides, it should be equipped with semi-conductor switching keys, which give the possibility to control fast transition processes. The proposed circuit gives the possibility to roun

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13

Kushwah, Ravindra Singh, and Shyam Akashe. "FinFET Based Tunable Analog Circuit: Design and Analysis at 45 nm Technology." Chinese Journal of Engineering 2013 (October 24, 2013): 1–8. http://dx.doi.org/10.1155/2013/165945.

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We included a designing of low power tunable analog circuits built using independently driven FinFETs devices, where the controlling of the back gate provide the output on the front gate. We show that this could be an effective solution to conveniently tune the output of bulk CMOS analog circuits particularly for Schmitt trigger and operational transconductance amplifier circuits. FinFET devices can be used to increase the performance by reducing the leakage current and power dissipation, because front and back gates both are independently controlled. FinFET device has a higher controllability

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14

Dasgupta, Samudra, and Travis S. Humble. "Characterizing the Reproducibility of Noisy Quantum Circuits." Entropy 24, no. 2 (2022): 244. http://dx.doi.org/10.3390/e24020244.

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The ability of a quantum computer to reproduce or replicate the results of a quantum circuit is a key concern for verifying and validating applications of quantum computing. Statistical variations in circuit outcomes that arise from ill-characterized fluctuations in device noise may lead to computational errors and irreproducible results. While device characterization offers a direct assessment of noise, an outstanding concern is how such metrics bound the reproducibility of a given quantum circuit. Here, we first directly assess the reproducibility of a noisy quantum circuit, in terms of the

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15

Pacheco-Sanchez, Anibal, J. Noé Ramos-Silva, Nikolaos Mavredakis, Eloy Ramírez-García, and David Jiménez. "High-Data-Rate Modulators Based on Graphene Transistors: Device Circuit Co-Design Proposals." Electronics 13, no. 20 (2024): 4022. http://dx.doi.org/10.3390/electronics13204022.

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The multifunctionality feature of graphene field-effect transistors (GFETs) is exploited here to design circuit building blocks of high-data-rate modulators by using a physics-based compact model. Educated device performance projections are obtained with the experimentally calibrated model and used to choose an appropriate improved feasible GFET for these applications. Phase-shift and frequency-shift keying (PSK and FSK) modulation schemes are obtained with 0.6 GHz GFET-based multifunctional circuits used alternatively in different operation modes: inverting and in-phase amplification and freq

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OYA, TAKAHIDE, IKUKO N. MOTOIKE, and TETSUYA ASAI. "SINGLE-ELECTRON CIRCUITS PERFORMING DENDRITIC PATTERN FORMATION WITH NATURE-INSPIRED CELLULAR AUTOMATA." International Journal of Bifurcation and Chaos 17, no. 10 (2007): 3651–55. http://dx.doi.org/10.1142/s0218127407019512.

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We propose a novel semiconductor device in which electronic-analogue dendritic trees grow on multilayer single-electron circuits. A simple cellular-automaton circuit was designed for generating dendritic patterns by utilizing the physical properties of single-electron devices, i.e. quantum and thermal effects in tunneling junctions. We demonstrate typical operations of the proposed circuit through extensive numerical simulations.

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17

ZHao, Hong-Quan, and Seiya Kasai. "WPG-Controlled Quantum BDD Circuits with BDD Architecture on GaAs-Based Hexagonal Nanowire Network Structure." Journal of Nanomaterials 2012 (2012): 1–6. http://dx.doi.org/10.1155/2012/726860.

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One-dimensional nanowire quantum devices and basic quantum logic AND and OR unit on hexagonal nanowire units controlled by wrap gate (WPG) were designed and fabricated on GaAs-based one-dimensional electron gas (1-DEG) regular nanowire network with hexagonal topology. These basic quantum logic units worked correctly at 35 K, and clear quantum conductance was achieved on the node device, logic AND circuit unit, and logic OR circuit unit. Binary-decision-diagram- (BDD-) based arithmetic logic unit (ALU) is realized on GaAs-based regular nanowire network with hexagonal topology by the same fabric

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18

Zainal Abidin, A. S., T. B. Sawing, S. Mohamaddan, et al. "Energy Harvesting from Rotating Motion of In-Pipe Robot Cleaning Device." International Journal of Automotive and Mechanical Engineering 16, no. 1 (2019): 6427–36. http://dx.doi.org/10.15282/ijame.16.1.2019.24.0486.

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In-pipe robot (IPR) needs a continuous and constant power supply for its operation. This research is a continuation from the previous IPR: D200 for cleaning operation. The objective of this research is to study the possibility of harvesting electrical energy from IPR and how much electrical output can be generated from the proposed solution. The concept is to re-use kinetic energy from high speed rotation of the IPR cleaning device to be converted into electrical energy which can be used to recharge the main battery. Two types of circuits have been developed namely unregulated charging circuit

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19

SEMENOV, Andriy, Maksym ANDREIENKOV, Anton KHLOBA, Mykhailo SHURKHAL, and Vladyslav OLKHOVYCH. "DEVELOPMENT OF A 150 W LINEAR LABORATORY POWER SUPPLY UNIT." MEASURING AND COMPUTING DEVICES IN TECHNOLOGICAL PROCESSES, no. 1 (March 28, 2024): 166–75. http://dx.doi.org/10.31891/2219-9365-2024-77-21.

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The laboratory power supply is an indispensable device for the manufacture, testing, adjustment and repair of electronic equipment. The object of research is the process of selecting and justifying the device circuit on a modern element base, developing a printed circuit board, manufacturing and testing the created device layout in practice. The toroidal transformer of the required power was also calculated. The test was carried out in the voltage and current stabilization mode, and the data obtained indicate the possibility of further improvement of the device's circuitry. To build a laborato

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20

Swank, Zoe, and Sebastian J. Maerkl. "CFPU: A Cell-Free Processing Unit for High-Throughput, Automated In Vitro Circuit Characterization in Steady-State Conditions." BioDesign Research 2021 (March 17, 2021): 1–11. http://dx.doi.org/10.34133/2021/2968181.

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Forward engineering synthetic circuits are at the core of synthetic biology. Automated solutions will be required to facilitate circuit design and implementation. Circuit design is increasingly being automated with design software, but innovations in experimental automation are lagging behind. Microfluidic technologies made it possible to perform in vitro transcription-translation (tx-tl) reactions with increasing throughput and sophistication, enabling screening and characterization of individual circuit elements and complete circuit designs. Here, we developed an automated microfluidic cell-

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21

Kim, Chul-Min, Hyun-Soo Yoon, Jong-Soo Kim, and Nam-Joon Kim. "Highly Reliable Short-Circuit Protection Circuits for Gallium Nitride High-Electron-Mobility Transistors." Electronics 13, no. 7 (2024): 1203. http://dx.doi.org/10.3390/electronics13071203.

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This paper presents a circuit for detecting and protecting against short circuits in E-mode gallium nitride high-electron-mobility transistors (GaN HEMTs) and analyzes the protection performance of the circuit. GaN HEMTs possess fast switching characteristics that enable high efficiency and power density in power conversion devices. However, these characteristics also pose challenges in protecting against short circuits and overcurrent situations. The proposed method detects short-circuit events by monitoring an instantaneous drop in the DC bus voltage of a circuit with GaN HEMTs applied and u

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Gavrilenkov, Sergey I., Elizaveta O. Petrenko, and Evgeny V. Arbuzov. "A Digital Device for Automatic Checking of Homework Assignments in the Digital Circuits Course." ITM Web of Conferences 35 (2020): 04009. http://dx.doi.org/10.1051/itmconf/20203504009.

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This paper considers a digital device for automatic checking of homework assignments in the digital circuits course. The assignment is to make a digital circuit corresponding to a given logical expression; the circuit is comprised of elementary logic gates. The process of manual testing the built circuit is very labor-intensive because checking a circuit with N inputs variables requires checking the correctness of the output variable for 2N cases. We propose automating this pro-cess with a special digital device. The device is comprised of a microcontroller connected to the circuit tested. The

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Batygin, Yuriy, Tetyana Gavrilova, Svitlana Shinderuk, and Evgeniy Chaplygin. "THE RESONANT AMPLIFIER OF THE ACTIVE ELECTRICAL POWER WITH ADDITIONAL VOLTAGE SOURCE. SUGGESTIONS, ANALYSIS, NUMERICAL ESTIMATES." Bulletin of the National Technical University «KhPI» Series: New solutions in modern technologies, no. 3(17) (October 5, 2023): 3–10. http://dx.doi.org/10.20998/2413-4295.2023.03.01.

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The problem of increasing energy saving in industry leads to the need to develop new technical devices. The paper presents and analyzes the circuit of the resonance amplifier of active electric power, evaluates the characteristics of electromagnetic processes for the fundamental substantiation of the operation of real devices based on this circuit. Mathematical analysis of electromagnetic processes taking place was carried out using strict methods of the theory of electric circuits. The advantages of this scheme in comparison with similar previous proposals are shown. The device includes four

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Kamioka, J., R. Matsuda, R. Mizokuchi, J. Yoneda, and T. Kodera. "Evaluation of a physically defined silicon quantum dot for design of matching circuit for RF reflectometry charge sensing." AIP Advances 13, no. 3 (2023): 035219. http://dx.doi.org/10.1063/5.0141092.

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This paper reports on the extraction of the equivalent circuit model parameters of a physically defined silicon quantum dot at a cryogenic temperature and design of the impedance matching circuits to improve the performance of a charge sensor for radio-frequency (RF) reflectometry. The I-V characteristics and the S-parameters of the quantum dot device are measured around a Coulomb peak at 4.2 K. The measured results are modeled by an RC parallel circuit, and the model parameters for the quantum dot device were obtained. We consider three impedance matching circuits for RF reflectometry of a qu

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Riquelme, Juan, and Ioannis Vourkas. "A Star Network of Bipolar Memristive Devices Enables Sensing and Temporal Computing." Sensors 24, no. 2 (2024): 512. http://dx.doi.org/10.3390/s24020512.

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Temporal (race) computing schemes rely on temporal memories, where information is represented with the timing of signal edges. Standard digital circuit techniques can be used to capture the relative timing characteristics of signal edges. However, the properties of emerging device technologies could be particularly exploited for more efficient circuit implementations. Specifically, the collective dynamics of networks of memristive devices could be leveraged to facilitate time-domain computations in emerging memristive memories. To this end, this work studies the star interconnect configuration

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Aeloiza, Eddy, Arun Kadavelugu, Pietro Cairoli, and Rostan Rodrigues. "An Experimental Demonstration of Short Circuit Protection of SiC Devices." Materials Science Forum 924 (June 2018): 818–21. http://dx.doi.org/10.4028/www.scientific.net/msf.924.818.

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An experimental demonstration of an effective short circuit protection scheme for SiC MOSFETs is presented in this paper. Measurements of the static characteristics of the SiC device before and after the short circuit events were obtained to evince that the device remained in good health. An ultra-fast short circuit protection scheme is implemented given the observed lower short-circuit withstand of present SiC devices. It is shown that the integrity of the SiC device was protected after one-hundred short circuit events.

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Shi, Yiqun, Yunpeng Li, Meng Li, Xin Xu, Hao Zhu, and Qingqing Sun. "Frequent Power-Up-and-Down-Induced Degradation of Device and Bandgap Voltage Reference in 14-nm FinFET Technology." Electronics 13, no. 17 (2024): 3506. http://dx.doi.org/10.3390/electronics13173506.

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The need for low power consumption in highly integrated systems-on-chip (SoCs), such as IoT-based smoke detection systems, has made frequent power-ups and power-downs a common practice. Although the device performance degradation caused by such frequent power-ups and power-downs is ignored in most circuit studies, in high-precision bandgap voltage references, the degradation of particular devices can result in a reference voltage shift. This work investigates the effects of frequent power-ups and power-downs on a simple bandgap reference circuit and demonstrates that the effects are real and n

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Liu, Zheng. "Analysis and research of EMI filter based on SiC power device." Applied and Computational Engineering 4, no. 1 (2023): 32–37. http://dx.doi.org/10.54254/2755-2721/4/20230341.

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The new electronic devices represented by SiC have brought new opportunities to improve the efficiency and power density of the drive circuit system. However, the complex circuit drive system using the new electronic devices still faces many challenges to give full play to its advantages. This paper focuses on the electromagnetic interference of drive circuit. Research on Filter Circuit, through in-depth study of the filter circuit, several second-order active circuits are proposed to filter the signal interference of the conduction path. Finally, an adjustable quality factor bandstop circuit

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Liu, Xi Gao, Zhi Min Liu, Jin Tao Zhang, et al. "Design of Frequency Selection Circuit of Advanced Detector Receiving Device in Coal Mine Roadway." Applied Mechanics and Materials 740 (March 2015): 507–10. http://dx.doi.org/10.4028/www.scientific.net/amm.740.507.

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Coal mine roadway advanced detector, including the transmitting and receiving devices, is a kind of geophysical instrument used in coal mine roadway advanced detection based on the dynamic and directional electric field excitation method. The transmitting device emits dual frequency modulated square wave current into the excavation face and the receiving device receives potential difference of coal and rock medium generated by induced polarization, of which the frequency selection circuit is to filter the interference of the harmonics of the signal and other frequency components. The paper der

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Oh, Seokjin, Jiyong An, Seungmyeong Cho, Rina Yoon, and Kyeong-Sik Min. "Memristor Crossbar Circuits Implementing Equilibrium Propagation for On-Device Learning." Micromachines 14, no. 7 (2023): 1367. http://dx.doi.org/10.3390/mi14071367.

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Equilibrium propagation (EP) has been proposed recently as a new neural network training algorithm based on a local learning concept, where only local information is used to calculate the weight update of the neural network. Despite the advantages of local learning, numerical iteration for solving the EP dynamic equations makes the EP algorithm less practical for realizing edge intelligence hardware. Some analog circuits have been suggested to solve the EP dynamic equations physically, not numerically, using the original EP algorithm. However, there are still a few problems in terms of circuit

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Filipova-Petrakieva, S. K., and Y. M. Shopov. "Electrical Device Protection from Overvoltage in a DC Power Supply Network: Fast-acting Protection, Realized by an “Artificial” Short Circuit in the Input of the Protected Device." Engineering, Technology & Applied Science Research 10, no. 1 (2020): 5314–19. http://dx.doi.org/10.48084/etasr.3316.

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In the present paper a protective device based on the so-called “artificial” short circuit in the input of the network, is proposed. To ensure the necessary time for switching on the protection, the increased power supply voltage is delayed to reach in the input of the protected device by additional inductance L, which is connected in series to the power supply. As a result of this forced short circuit, the DC-power supply is switched off by a standard protective circuit-breaker. The short circuit is realized by a fast-acting semi-conductor device (e.g. diac + thyristor, etc.). The controlling

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Islam, Ishraq, Vinayak Jha, Sneha Thomas, et al. "Quantum Circuit Synthesis Using Fuzzy-Logic-Assisted Genetic Algorithms." Algorithms 18, no. 4 (2025): 178. https://doi.org/10.3390/a18040178.

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Quantum algorithms will likely play a key role in future high-performance-computing (HPC) environments. These algorithms are typically expressed as quantum circuits composed of arbitrary gates or as unitary matrices. Executing these on physical devices, however, requires translation to device-compatible circuits, in a process called quantum compilation or circuit synthesis, since these devices support a limited number of native gates. Moreover, these devices typically have specific qubit topologies, which constrain how and where gates can be applied. Consequently, logical qubits in input circu

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Touloupas, Konstantinos, and Paul Peter Sotiriadis. "Mixed-Variable Bayesian Optimization for Analog Circuit Sizing through Device Representation Learning." Electronics 11, no. 19 (2022): 3127. http://dx.doi.org/10.3390/electronics11193127.

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In this work, a deep representation learning method is proposed to build continuous-valued representations of individual integrated circuit (IC) devices. These representations are used to render mixed-variable analog circuit sizing problems as continuous ones and to apply a low-budget black box Bayesian optimization (BO) variant to solve them. By transforming the initial search spaces into continuous-valued ones, the BO’s Gaussian process models (GPs), which typically operate on real-valued spaces, can be used to guide the optimization search towards the global optimum. The proposed Device Rep

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Mishra, Brijendra, Vivek Singh Kushwah, and Rishi Sharma. "MODELING OF HYBRID MOS FOR THE IMPLEMENTATION OF SWITCHED CAPACITOR FILTER USING SINGLE ELECTRON TRANSISTOR." International Journal of Engineering Technologies and Management Research 5, no. 2 (2020): 294–300. http://dx.doi.org/10.29121/ijetmr.v5.i2.2018.659.

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In digital integrated circuit architectures, transistors serve as circuit switches to charge and discharge capacitors to the required logic voltage levels. A transistor is a three terminal semiconductor device used to amplify and switch electronic signals and electrical power. It has been observed that the Scaling down of electronic device sizes has been the fundamental strategy for improving the performance of ultra-large-scale integrated circuits (ULSIs). Metaloxide-semiconductor field-effect transistors (MOSFETs) have been the most prevalent electron devices for ULSI applications. A better

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Brijendra, Mishra *1, Singh Kushwah 1. Vivek, and Sharma 2. Rishi. "MODELING OF HYBRID MOS FOR THE IMPLEMENTATION OF SWITCHED CAPACITOR FILTER USING SINGLE ELECTRON TRANSISTOR." International Journal of Engineering Technologies and Management Research 5, no. 2 (SE) (2018): 294–300. https://doi.org/10.5281/zenodo.1247477.

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In digital integrated circuit architectures, transistors serve as circuit switches to charge and discharge capacitors to the required logic voltage levels. A transistor is a three terminal semiconductor device used to amplify and switch electronic signals and electrical power. It has been observed that the Scaling down of electronic device sizes has been the fundamental strategy for improving the performance of ultra-large-scale integrated circuits (ULSIs). Metaloxide-semiconductor field-effect transistors (MOSFETs) have been the most prevalent electron devices for ULSI applications. A better

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36

Zhu, Zihan. "Analysis of short-circuit behavior and failure modes in SiC power devices." Applied and Computational Engineering 11, no. 1 (2023): 236–41. http://dx.doi.org/10.54254/2755-2721/11/20230244.

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This essay presents the advantages of SiC power devices, while the short-circuit characteristics limit their development. The device short-circuit will seriously affect the efficiency of the use of the period. When a load short circuit occurs, both ends of the power MOSFET device will be directly connected to the high bus voltage; therefore, the short circuit process poses a great challenge to the device's ability to withstand high voltage, high current, and high junction temperature simultaneously. In this thesis, the short-circuit process of SiC power devices is investigated by designing a d

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Mohan, S., J. P. Sun, P. Mazumder, and G. I. Haddad. "Device and circuit simulation of quantum electronic devices." IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems 14, no. 6 (1995): 653–62. http://dx.doi.org/10.1109/43.387727.

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Shah, Arati Kumari, Kannan Udaya Mohanan, Jisun Park, Hyungsoon Shin, Eou-Sik Cho, and Seongjae Cho. "An Area-Efficient Integrate-and-Fire Neuron Circuit with Enhanced Robustness against Synapse Variability in Hardware Neural Network." IET Circuits, Devices & Systems 2023 (December 26, 2023): 1–10. http://dx.doi.org/10.1049/2023/1052063.

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Neuron circuits are the fundamental building blocks in the modern neuromorphic system. Designing compact and low-power neuron circuits can significantly improve the overall area and energy efficiencies of a neuromorphic chip architecture. Here, practical neuron circuits must overcome the variations arising from nonideal behaviors of synaptic devices, such as stuck-at-fault and conductance deviation. In this study, a compact leaky integrate-and-fire neuron circuit has been designed, with resilience to synaptic device state variations, for hardware implementation of spiking neural networks (SNNs

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Filipova-Petrakieva, S. K., and Y. M. Shopov. "Electrical Device Protection from Overvoltage in a DC Power Supply Network: Fast-acting Protection, Realized by an "Artificial" Short Circuit in the Input of the Protected Device." Engineering, Technology & Applied Science Research 10, no. 1 (2020): 5314–19. https://doi.org/10.5281/zenodo.3659650.

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In the present paper a protective device based on the so-called “artificial” short circuit in the input of the network, is proposed. To ensure the necessary time for switching on the protection, the increased power supply voltage is delayed to reach in the input of the protected device by additional inductance L, which is connected in series to the power supply. As a result of this forced short circuit, the DC-power supply is switched off by a standard protective circuit-breaker. The short circuit is realized by a fast-acting semi-conductor device (e.g. diac + thyristor, etc.). The

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Foss, R. C., and A. L. Silburt. "The interface between device and circuit design." Canadian Journal of Physics 63, no. 6 (1985): 699–701. http://dx.doi.org/10.1139/p85-108.

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A proper understanding of transistor and other circuit-element behavior is critical in the design process of integrated circuits intended for high-volume production or exacting performance standards. Models of such elements are a key ingredient in the circuit-simulation task, which provides design-verification feedback to chip designers. Failures in this process can have costly consequences. Much of the effort put into modelling work contributes very little to real needs as practical failures are usually at the much more gross level of user input or program-coding problems.

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Huang, Yinghao. "Study on short circuit effect of silicon carbide power devices." Applied and Computational Engineering 9, no. 1 (2023): 34–42. http://dx.doi.org/10.54254/2755-2721/9/20230027.

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SiC can provide better material properties when the performance of Si - based power devices is almost developed to the limit. But compared with Si material, the reliability of SiC device is poor under ultimate stress. The short circuit capability of SiC MOSFET has been the main area of attention in this papers study. Through the analysis of SiC MOSFET short-circuit capability, it is mainly represented by the time that the device can withstand short-circuit stress and the time it takes for the device to be safely turned off in the event of a short circuit fault. Secondly, the detection circuit

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FOSSUM, JERRY G. "A SIMULATION-BASED PREVIEW OF EXTREMELY SCALED DOUBLE-GATE CMOS DEVICES AND CIRCUITS." International Journal of High Speed Electronics and Systems 12, no. 02 (2002): 563–72. http://dx.doi.org/10.1142/s0129156402001460.

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This paper gives a simulation-based preview of device-design issues and performance of extremely scaled DG CMOS. A suite of simulation tools, including a 2D numerical device simulator, a 1D numerical Poisson-Schrödinger solver, and a generic, physics/process-based DG MOSFET compact model in Spice, is applied to both asymmetrical-and symmetrical-gate DG CMOS devices and circuits to provide physical insight at the device and circuit levels. The results give added motivation as well as preliminary guidance for the development of DG CMOS.

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Ha, Yejin, Hyungsoon Shin, Wookyung Sun, and Jisun Park. "Circuit Optimization Method to Reduce Disturbances in Poly-Si 1T-DRAM." Micromachines 12, no. 10 (2021): 1209. http://dx.doi.org/10.3390/mi12101209.

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A capacitorless one-transistor dynamic random-access memory device (1T-DRAM) is proposed to resolve the scaling problem in conventional one-transistor one-capacitor random-access memory (1T-1C-DRAM). Most studies on 1T-DRAM focus on device-level operation to replace 1T-1C-DRAM. To utilize 1T-DRAM as a memory device, we must understand its circuit-level operation, in addition to its device-level operation. Therefore, we studied the memory performance depending on device location in an array circuit and the circuit configuration by using the 1T-DRAM structure reported in the literature. The simu

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Gostimirovic, Dusan, and Richard Soref. "An Integrated Optical Circuit Architecture for Inverse-Designed Silicon Photonic Components." Sensors 23, no. 2 (2023): 626. http://dx.doi.org/10.3390/s23020626.

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In this work, we demonstrate a compact toolkit of inverse-designed, topologically optimized silicon photonic devices that are arranged in a “plug-and-play” fashion to realize many different photonic integrated circuits, both passive and active, each with a small footprint. The silicon-on-insulator 1550-nm toolkit contains a 2 × 2 3-dB splitter/combiner, a 2 × 2 waveguide crossover, and a 2 × 2 all-forward add–drop resonator. The resonator can become a 2 × 2 electro-optical crossbar switch by means of the thermo-optical effect, phase-change cladding, or free-carrier injection. For each of the t

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Takemae, Yoshihir, Tomio Nakano, Masao Nakano, and Kimiaki Sato. "4903111 Integrated circuit device." Microelectronics Reliability 31, no. 1 (1991): v. http://dx.doi.org/10.1016/0026-2714(91)90484-o.

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Seon, Yoongeun, Jeesoo Chang, Changhyun Yoo, and Jongwook Jeon. "Device and Circuit Exploration of Multi-Nanosheet Transistor for Sub-3 nm Technology Node." Electronics 10, no. 2 (2021): 180. http://dx.doi.org/10.3390/electronics10020180.

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A multi-nanosheet field-effect transistor (mNS-FET) device was developed to maximize gate controllability while making the channel in the form of a sheet. The mNS-FET has superior gate controllability for the stacked channels; consequently, it can significantly reduce the short-channel effect (SCE); however, punch-through inevitably occurs in the bottom channel portion that is not surrounded by gates, resulting in a large leakage current. Moreover, as the size of the semiconductor device decreases to several nanometers, the influence of the parasitic resistance and parasitic capacitance increa

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Yusuf, S. D., V. Omojorla, I. Umar, and A. Z. Loko. "Implementation of a 220v Ac Overload and High Voltage Monitor Alert System with Auto Shut Down." International Journal of Engineering and Modern Technology 8, no. 5 (2023): 32–40. http://dx.doi.org/10.56201/ijssmr.v8.no1.2022.pg32.40.

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The electricity supply in Nigeria is usually associated with voltage fluctuation that causes damage to connected loads. In this study, implementation of a 220V AC overload and high voltage monitor alert system with auto shutdown was carried out using an ATMega328p microcontroller. The circuit was simulated in Proteus Ver8.12 using Arduino software with C++ programing language. A prototype was constructed on a Vero board and tested for continuity and power ON. Performance analysis with 50 trials (25- high voltage, 25- overload) was used to calculate sensitivity and accuracy. Result shows good c

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Musale, Prajakta P., Sandesh S. Rathod, Roshan J. Bhangare Tejas R. Runwal, Mehul R. Raut, and Rutuja A. Sarode. "Short Circuit Indicator." IOSR Journal of Electrical and Electronics Engineering 19, no. 6 (2024): 07–09. http://dx.doi.org/10.9790/0853-1906010709.

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This application introduces the short-circuit indicator, an important protection against electrical hazards in residential, commercial and industrial environments. This device continuously monitors the voltage in the circuit and acts as an alert sentry against dangerous surges. By using a preset threshold, the signal can distinguish between normal voltage fluctuations and short-circuit characteristic spikes. By detecting a jump, the register takes immediate action to prevent losses. It disconnects the circuit quickly, efficiently disconnecting abnormal electrical currents, and protects the con

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Okude, Satoshi, Kazushisa Itoi, Masahiro Okamoto, Nobuki Ueta, and Osamu Nakao. "Active and Passive Devices Embedded in Laminate-Based Multilayer Board." Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2012, DPC (2012): 001253–83. http://dx.doi.org/10.4071/2012dpc-tp44.

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We have developed active and passive devices embedded multilayer board utilizing our laminate-based WLCSP embedding technology. The proposed embedded board is realized by laminating plural circuit formed polyimide films together by adhesive with thin devices being arranged in between those polyimide layers. The electrical connection via has a filled via structure composed of the alloy forming conductive paste which ensures high reliable connection. The embedded active device is WLCSP which has no solder bump on its pads therefore the thickness of the die is reduced to 80 microns. The embedded

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Kh Abduraimov, E., and D. Kh Khalmanov. "Invention of a contactless voltage relay with an adjustable reset ratio." Journal of Physics: Conference Series 2373, no. 7 (2022): 072010. http://dx.doi.org/10.1088/1742-6596/2373/7/072010.

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Abstract The purpose of this article is to apply the relay effect observed in semiconductor circuits to create a contactless relay voltage with an adjustable return coefficient, connected in one device sensitivity to the input voltage and switching of powerful loads to high currents. A dynamic circuit is investigated, consisting of an adjustable semiconductor, in series with a parallel circuit of a capacitor and a resistor, which is one of the parts of the proposed relay device with a sinusoidal frequency of voltage fluctuations on the load. To study the operating modes and analyze the device

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