Relevant bibliographies by topics / Circuit edit

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  1. Journal articles
  2. Dissertations / Theses
  3. Books
  4. Book chapters
  5. Conference papers

Academic literature on the topic 'Circuit edit'

Author: Grafiati
Published: 4 June 2021
Last updated: 1 February 2022

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Journal articles on the topic "Circuit edit"

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Martínez-Pérez, M. J., J. Sesé, R. Córdoba, F. Luis, D. Drung, and T. Schurig. "Circuit edit of superconducting microcircuits." Superconductor Science and Technology 22, no. 12 (2009): 125020. http://dx.doi.org/10.1088/0953-2048/22/12/125020.

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Katoh, Yusuke, Hironari Yoshiuchi, Yoshio Murata, and Hironori Nakajo. "Scalable Hardware Mechanism for Partitioned Circuits Operation." ECTI Transactions on Computer and Information Technology (ECTI-CIT) 12, no. 2 (2018): 90–97. http://dx.doi.org/10.37936/ecti-cit.2018122.142511.

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For designing hardware with a high-level synthesis tool using a programming language such as C or Java, its large size of logic circuit makes it difficult to implement the design in a single FPGA. In such a case, partitioning the logic circuit and implementing in multiple FPGAs is a commonly used approach.
 We propose the Scalable Hardware Mechanism, which enables the operation of a partitioned circuit to prevent the degradation of clock frequency by minimizing its dependence on the usage and the type of FPGA. Our mechanism provides a reduced delay by the collective signal transmission with the partitioned AES code generation circuit and the character string edit distance calculation circuit as partitioned circuits. The collective signal transmission has attained 1.27 times improvement in the speed for the AES code generation circuit and 3.16 times improvement for the character string edit distance calculation circuit compared with the circuit by the conventional method.
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Wu, Huimeng, David Ferranti, and Lewis Stern. "Precise nanofabrication with multiple ion beams for advanced circuit edit." Microelectronics Reliability 54, no. 9-10 (2014): 1779–84. http://dx.doi.org/10.1016/j.microrel.2014.08.003.

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Tanaka, Hideo, and Chun-Cheng Tsao. "Reliable endpoint technique on Si trenching for backside circuit edit." Microelectronics Reliability 114 (November 2020): 113935. http://dx.doi.org/10.1016/j.microrel.2020.113935.

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Livengood, R., S. Tan, P. Hack, M. Kane, and Y. Greenzweig. "Focused Ion Beam Circuit Edit–A Look into the Past, Present, and Future." Microscopy and Microanalysis 17, S2 (2011): 672–73. http://dx.doi.org/10.1017/s1431927611004235.

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Liu, Kun, Alex Soskov, Larry Scipioni, Neil Bassom, Sybren Sijbrandij, and Gerald Smith. "Electrical breakthrough effect for end pointing in 90 and 45nm node circuit edit." Applied Physics Letters 88, no. 12 (2006): 124104. http://dx.doi.org/10.1063/1.2190710.

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Niles, David W., James Stout, Richard Christensen, and Richard Rodgers. "Permittivity of SiO2 for estimating capacitive delays in focused ion beam circuit edit." Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena 33, no. 1 (2015): 012203. http://dx.doi.org/10.1116/1.4904757.

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Schlangen, R., P. Sadewater, U. Kerst, and C. Boit. "Contact to contacts or silicide by use of backside FIB circuit edit allowing to approach every active circuit node." Microelectronics Reliability 46, no. 9-11 (2006): 1498–503. http://dx.doi.org/10.1016/j.microrel.2006.07.025.

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Boit, C., R. Schlangen, A. Glowacki, et al. "Physical IC debug – backside approach and nanoscale challenge." Advances in Radio Science 6 (May 26, 2008): 265–72. http://dx.doi.org/10.5194/ars-6-265-2008.

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Abstract. Physical analysis for IC functionality in submicron technologies requires access through chip backside. Based upon typical global backside preparation with 50–100 µm moderate silicon thickness remaining, a state of the art of the analysis techniques available for this purpose is presented and evaluated for functional analysis and layout pattern resolution potential. A circuit edit technique valid for nano technology ICs, is also presented that is based upon the formation of local trenches using the bottom of Shallow Trench Isolation (STI) as endpoint for Focused Ion Beam (FIB) milling. As a derivative from this process, a locally ultra thin silicon device can be processed, creating a back surface as work bench for breakthrough applications of nanoscale analysis techniques to a fully functional circuit through chip backside. Several applications demonstrate the power and potential of this new approach.
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Saha, Aloke, Rahul Pal, and Jayanta Ghosh. "Novel Self-Pipelining Approach for Speed-Power Efficient Reliable Binary Multiplication." Micro and Nanosystems 12, no. 3 (2020): 149–58. http://dx.doi.org/10.2174/1876402911666190916155445.

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Background: The present study explores a novel self-pipelining strategy that can enhance speed-power efficiency as well as the reliability of a binary multiplier as compared to state-of-art register and wavepipelining. Method: Proper synchronization with efficient clocking between the subsequent self-pipelining stages has been assured to design a self-pipelined multiplier. Each self-pipelining stage consists of self-latching leaf cells that are designed, optimized and evaluated by TSMC 0.18μm CMOS technology with 1.8V supply rail and at 25°C temperature. The T-Spice transient response and simulated results for the designed circuits are presented. The proposed idea has been applied to design 4-b×4-b self-pipelined Wallace- tree multiplier. The multiplier was validated for all possible test patterns and the transient response was evaluated. The circuit performance in terms of propagation delay, average power and Power-Delay- Product (PDP) is recorded. Next, the decomposition logic is applied to design a higher-order multiplier (i.e., 8-bit×8-bit and 16-bit×16-bit) based on the proposed strategy using 4-bit×4-bit self-pipelined multiplier. The designed multiplier was also validated through extensive TSpice simulation for all the required test patterns using W-Edit and the evaluated performance is presented. All the designs, optimizations and evaluations performed are based on BSIM3 device parameter of TSMC 0.18μm CMOS technology with 1.8V supply rail at 25°C temperature using S-Edit of Tanner EDA. Results: The reliability was investigated of the proposed 4-b×4-b multiplier in the temperature range - 40°C to 100°C for maximum PDP variation. Conclusion: A benchmarking analysis in terms of speed-power performance with recent competitive design reveals preeminence of the proposed technique.
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Dissertations / Theses on the topic "Circuit edit"

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Remes, J. (Janne). "The development of laser chemical vapor deposition and focused ion beam methods for prototype integrated circuit modification." Doctoral thesis, University of Oulu, 2006. http://urn.fi/urn:isbn:9514281403.

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Abstract In this work the LCVD of copper and nickel from the precursor gases Cu(hfac)tmvs and Ni(CO)4 has been investigated. The in-house constructed LCVD system and processes and the practical utilisation of these in prototype integrated circuit edit work are described. The investigated process parameters include laser power, laser scan speed, precursor partial pressure and the effect of H2 and He carrier gases. The deposited metal conductor lines have been examined by LIMA, AFM, FIB secondary electron/ion micrography, and by electrical measurements. Furthermore, the study of experimental FIB circuit edit processes is carried out and discussed with particular emphasis on ion beam induced ESD damages. It is shown how the LCVD and FIB methods can be combined to create a novel method to carry out successfully circuit edit cases where both methods alone will fail. The combined FIB/LCVD- method is shown to be highly complementary and effective in practical circuit edit work in terms of reduced process time and improved yield. Circuit edit cases where both technologies are successfully used in a complementary way are presented. Selected examples of some special circuit edit cases include RF- circuit editing, a high resolution method for FIB-deposited tungsten conductor line resistance reduction and large area EMI shielding of IC surfaces. Based on the research it was possible for a formal workflow for the combined process to be developed and this approach was applied to 132 circuit edit cases with 85% yield. The combined method was applied to 30% of the total number of edit cases. Finally, the developed process and constructed system was commercialized.
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Nateghi, Bahman. "Une methode orientee edif pour la conception des vlsi, et realisation de son systeme de cao." Paris 6, 1988. http://www.theses.fr/1988PA066435.

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Ce memoire traite de la conception assistee par ordinateur dans le domaine des circuits electroniques a haut niveau d'integration, en presentant une methode de conception pour ces circuits, et la chaine d'outils logiciels adaptes a cette methode. La premiere partie critique deux methodologies de conception typiques dans ce domaine. La seconde partie decrit les differentes phases de la methodologie s'inscrivant dans le cadre de la norme edif. La troisieme partie presente plusieurs outils de cao developpes au cours de l'etude, a savoir: une chaine complete d'edition; une chaine complete de verification; un routeur de canal; un routeur global; des post-processeurs de traduction et de visualisation
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Cohen, Philippe. "Realisation dans le cadre d'une methode de conception orientee edif, d'un systeme de cao pour les vlsi." Paris 6, 1988. http://www.theses.fr/1988PA066156.

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Conception assistee par ordinateur dans le domaine des circuits electroniques a haut niveau d'integration en presentant une methode conception de ces circuits integres et la chaine d'outils logiciels adaptes a cette methode
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Ou, Shih-Chieh, and 歐士傑. "Digital Circuit Design of EDFT Algorithm for Power Systems." Thesis, 2003. http://ndltd.ncl.edu.tw/handle/08259057367580024090.

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碩士<br>國立臺灣大學<br>電機工程學研究所<br>91<br>This thesis focuses on the measurement unit of synchronized phasor measurement unit (PMU). PMU is used to measure the phasor and frequency parameters of voltage and current in the power systems. We design digital circuit of basic EDFT algorithm by VHDL and schematic based on FPGA instead of microprocessor in PMU. At first, we divide the mathematical formula of basic EDFT algorithm into several parts in order to set up each module, then we combine every module to complete the design of basic EDFT algorithm digital circuit by the way of bottom-up. Finally, we measure the frequency of test signal, the average error rate of our design is approximately 0.04%, and the processing time is 116.68ns.
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Books on the topic "Circuit edit"

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Physical design of CMOS integrated circuits using L-Edit. PWS Pub. Co., 1995.

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Book chapters on the topic "Circuit edit"

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Shakya, Bicky, Xiaolin Xu, Navid Asadizanjani, Mark Tehranipoor, and Domenic Forte. "Leveraging Circuit Edit for Low-Volume Trusted Nanometer Fabrication." In Security Opportunities in Nano Devices and Emerging Technologies. CRC Press, 2017. http://dx.doi.org/10.1201/9781315265056-13.

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DiBattista, Michael, and TR Lundquist. "Role of Advanced Circuit Edit for First Silicon Debug." In Microelectronics Failure Analysis. ASM International, 2019. http://dx.doi.org/10.31399/asm.tb.mfadr7.t91110351.

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Conference papers on the topic "Circuit edit"

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Jain, R. K., T. Malik, T. R. Lundquist, C. C. Tsao, and W. J. Walecki. "Advanced Fringe Analysis Techniques in Circuit Edit." In ISTFA 2006. ASM International, 2006. http://dx.doi.org/10.31399/asm.cp.istfa2006p0079.

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Abstract Novel Fabry Perot [1] fringe analysis techniques for monitoring the etching process with a coaxial photon-ion column [2] in the Credence OptiFIB are reported. Presently the primary application of these techniques in circuit edit is in trenching either from the front side or from the backside of a device. Optical fringes are observed in reflection geometry through the imaging system when the trench floor is thin and semi-transparent. The observed fringes result from optical interference in the etalon formed between the trench floor (Si in the case of backside trenching) and the circuitry layer beyond the trench floor. In-situ real-time thickness measurements and slope correction techniques are proposed that improve endpoint detection and control planarity of the trench floor. For successful through silicon edits, reliable endpoint detection and co-planarity of a local trench is important. Reliable endpoint detection prevents milling through bulk silicon and damaging active circuitry. Uneven trench floor thickness results in premature endpoint detection with sufficient thickness remaining in only part of the trench area. Good co-planarity of the trench floor also minimizes variability in the aspect ratios of the edit holes, hence increasing success rates in circuit edit.
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Thompson, Mark A., Calvin Chen, Chun-Cheng Tsao, Ming Han, and Hun Lian Tsai. "“On Wafer” Design Validation Through Complementary Dual-Side Circuit Editing using FIB." In ISTFA 2004. ASM International, 2004. http://dx.doi.org/10.31399/asm.cp.istfa2004p0546.

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Abstract We present, a novel solution to focused ion beam (FIB) circuit edit, performed through the back and front surfaces of the same semiconductor device under test (DUT). This complementary dual-side FIB modification was performed at wafer level test, on a wafer piece, utilizing a coaxial photon-ion focused ion beam system. The DUT was found to have excessive Iddq leakage current due to a fault in a tri-state driver circuit, and was determined that two FIB edits were required to validate the proposed correction. Wafer level editing provides a more flexible approach to access the edit sites. We accessed one site via the front side circuitry of the DUT and the other through the backside silicon. A wafer piece was used for this dual-side edit to demonstrate relatively uncomplicated sample preparation for FIB access, and still allow wafer level probing afterward. The silicon was locally thinned by mechanical means over the specific die for backside FIB editing. Following the backside edit, the front side edit was performed, with minimal sample preparation. The modifications were validated following these edits, where Iddq and emission measurement were nominal.
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Malik, Tahir, Rajesh Jain, Ferdi Meijer, and Tim Velthof. "Novel Circuit Edit Solution for Bulk Copper Milling." In ISTFA 2010. ASM International, 2010. http://dx.doi.org/10.31399/asm.cp.istfa2010p0431.

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Abstract Focused Ion Beam (FIB) circuit edit (CE) has been playing a pivotal role in providing insight to ramp-up yield. Numerous IC fabrication processes inherently pose unique challenges to FIB circuit edit approaches. Copper (Cu) has been the material of choice for interconnects as technology features shrink to the 180 nm node and below. Thick copper planes are used for multiple reasons that are mentioned later. Milling through thick copper planes has been tremendously challenging and time consuming during FIB circuit edits. Proposed is a methodology to enhance the bulk Cu removal process at astounding etching rates while maintaining planarity.
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DiBattista, Michael, Martin Parley, Don Lyons, et al. "Circuit Edit Geometric Trends." In ISTFA 2013. ASM International, 2013. http://dx.doi.org/10.31399/asm.cp.istfa2013p0111.

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Abstract Focused ion beam (FIB) tools for backside circuit edit play a major role in the validation of integrated circuit (IC) design modifications. Process scaling is one of many significant challenges, because it reduces the accessible area to modify transistors and IC interconnects in the design. This paper examines the geometries available for FIB nanomachining, via milling/etching, and deposited metal jumpers by analyzing polygon data from computer aided design (CAD) virtual layers gathered across four process technologies, from 180nm down to 28nm. The results of this analysis demonstrate that the combination of silicon nanomachining box length and FIB via box length identifies the most challenging aspects of the FIB edit. The smallest geometries include a 300 nanometer silicon access area with a FIB milled 200 nanometer via inside it. More advanced technology nodes will require the ability to make smaller geometries without the help of integrated design features typically referred to as design for FIB/Debug.
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Jain, R. K., T. Malik, T. R. Lundquist, et al. "Effects of Backside Circuit Edit on Transistor Characteristics." In ISTFA 2007. ASM International, 2007. http://dx.doi.org/10.31399/asm.cp.istfa2007p0029.

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Abstract Backside circuit edit techniques on integrated circuits (ICs) are becoming common due to increase number of metal layers and flip chip type packaging. However, a thorough study of the effects of these modifications has not been published. This in spite of the fact that the IC engineers have sometimes wondered about the effects of backside circuit edit on IC behavior. The IC industry was well aware that modifications can lead to an alteration of the intrinsic behavior of a circuit after a FIB edit [1]. However, because alterations can be controlled [2], they have not stopped the IC industry from using the FIB to successfully reconfigure ICs to produce working “silicon” to prove design and mask changes. Reliability of silicon device structures, transistors and diodes, are investigated by monitoring intrinsic parameters before and after various steps of modification.
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O’Donnell, E., D. Scott, T. Malik, et al. "Advanced Methodologies for Backside Circuit Edit." In ISTFA 2008. ASM International, 2008. http://dx.doi.org/10.31399/asm.cp.istfa2008p0305.

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Abstract Editing inside an integrated circuit (IC) is critical to debug new devices. Current flipchip circuit edit techniques are limited by spot resolution and chemistry constraints of Focused Ion Beam (FIB) systems. The newly proposed technique for circuit edit (CE) employs FIB to contact circuit nodes directly on transistor level, offering a wide range of applications since it allows accessing every signal on a chip. The general functionality and the influence on chip performance are evaluated for an Intel 65nm process technology.
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Kim, Y. J., J. H. Yeo, J. I. Choi, C. S. Kim, and M. M. Jeong. "Effective Backside Circuit Edit Methods for CSP IC." In ISTFA 2018. ASM International, 2018. http://dx.doi.org/10.31399/asm.cp.istfa2018p0219.

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Abstract In the semiconductor chip manufacturing industry, a method of evaluating characteristics by applying a direct circuit edit at an already manufactured chip level is widely used in order to shorten the product development time and release the product to the market in a short time. [1] This is because, when the fab process is performed by modifying the mask to improve the characteristics as in the conventional method, it takes a lot of time and cost for feedback. Feedback of semiconductor characteristics through circuit edit can save 10-20 times in terms of cost and time. As the process becomes more complex and the pattern size becomes smaller, its benefits become even greater. However, when the chip level circuit edit is applied to the Chip Scale Package (CSP) IC, it is very difficult to apply a general method of the frontside circuit edit, so that the success rate of the circuit edit is lowered. In order to solve this problem, a circuit edit method in the backside direction of the chip has been attempted for many years. [2, 3] However, the backside circuit edit (BCE) has more difficulties than the frontside circuit edit. A typical issue is how to uniformly and precisely control and remove the backside Si of the circuit edit area. The following three points should be considered for this. First, the uniformity of the remaining silicon thickness should be high. Second, it is necessary to control the thickness of remaining silicon to an appropriate thickness in the process of removing backside silicon. Third, it is important not to damage the peripheral circuit during etching and deposition. In this paper, we propose a method to increase the backside circuit edit success rate of CSP IC using Al or Cu metal by controlling these three factors effectively.
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Po Fu Chou, Chun Ming Tsai, and Yu Hsiang Shu. "Layout debugging demonstration by FIB circuit edit." In 2010 17th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA 2010). IEEE, 2010. http://dx.doi.org/10.1109/ipfa.2010.5531976.

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Rue, Chad, Randall Shepherd, Roy Hallstein, and Rick Livengood. "Low keV FIB Applications for Circuit Edit." In ISTFA 2007. ASM International, 2007. http://dx.doi.org/10.31399/asm.cp.istfa2007p0312.

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Abstract Focused ion beam (FIB) tools are used to perform "circuit edit," (CE), in which existing integrated circuit devices are modified to create prototype devices that simulate potential mask changes. Although ion milling at low keV is common in TEM sample preparation, the technique has not become commonplace for CE applications. This is because most commercial FIB systems are optimized for either 30 or 50 keV. Recent work in the laboratories of FEI and Intel have attempted to apply low keV FIB processing to cutting small copper lines on advanced IC devices. The majority of this paper focuses on water-assisted, low keV copper etching. Secondary objectives of this work are to raise general awareness among FIB users of the potential benefits of low keV processing, to speculate on the physical mechanisms involved, and to discuss some of the technical difficulties associated with low keV FIB operation.
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Herschbein, Steven B., Carmelo F. Scrudato, George K. Worth, and Edward S. Hermann. "The Challenges of Backside Focused Ion Beam (FIB) Editing in the Presence of Deep Trench Decoupling Capacitors." In ISTFA 2011. ASM International, 2011. http://dx.doi.org/10.31399/asm.cp.istfa2011p0031.

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Abstract For most advanced semiconductor products, Focused Ion Beam (FIB) circuit modification and node access through the backside of the chip is the only viable approach. The high density of interconnect wiring and the presence of C4 solder bumping for chip to module attachment has made complex edits virtually impossible with long standing conventional frontside techniques. Unfortunately, the presence of buried circuit elements on the very latest designs greatly complicates the backside editing formula. The introduction of deep trench capacitors as a distributed circuit element in logic designs has had a profound impact on the established methods of backside FIB chip editing. In many cases wide area preparatory trenching down to the underside of circuitry cannot be done without damage to structures that penetrate the silicon adjacent to active transistors by as much as 10 microns. The decision whether to remove these devices or attempt to work around them requires an analysis of the impact on circuit performance and an assessment of the working space (control of anisotropy of etch, aspect ratio issues, etc.) available for executing the edit. IBM is in the process of developing a new set of procedures for performing FIB backside edits on circuits that incorporate these buried structures.
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