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Journal articles on the topic 'Circuits RF BiCMOS'

Author: Grafiati

Published: 4 June 2021

Last updated: 1 February 2022

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1

Mai, A., I. Garcia Lopez, P. Rito, et al. "High-Speed SiGe BiCMOS Technologies and Circuits." International Journal of High Speed Electronics and Systems 26, no. 01n02 (2017): 1740002. http://dx.doi.org/10.1142/s012915641740002x.

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This work reports on the development of SiGe-BiCMOS technologies for mm-wave and THz high frequency applications. We present state-of-the-art performances for different SiGe heterojunction bipolar transistor (SiGe-HBT) developments as well as the evolution of complex BiCMOS technologies. With respect to different technology generations of high-speed SiGe-BiCMOS processes at IHP we discuss selected device modifications of the SiGe-HBT to achieve high frequency performances of a complex BiCMOS technology towards the 0.5 THz regime. We show the difference of high-frequency performance difference

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2

Kazior, Thomas E. "Beyond CMOS: heterogeneous integration of III–V devices, RF MEMS and other dissimilar materials/devices with Si CMOS to create intelligent microsystems." Philosophical Transactions of the Royal Society A: Mathematical, Physical and Engineering Sciences 372, no. 2012 (2014): 20130105. http://dx.doi.org/10.1098/rsta.2013.0105.

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Advances in silicon technology continue to revolutionize micro-/nano-electronics. However, Si cannot do everything, and devices/components based on other materials systems are required. What is the best way to integrate these dissimilar materials and to enhance the capabilities of Si, thereby continuing the micro-/nano-electronics revolution? In this paper, I review different approaches to heterogeneously integrate dissimilar materials with Si complementary metal oxide semiconductor (CMOS) technology. In particular, I summarize results on the successful integration of III–V electronic devices

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3

Lahbib, Imene, Mohamed Aziz Doukkali, Philippe Descamps, Patrice Gamand, Christophe Kelma, and Olivier Tesson. "Design and characterization of an integrated microwave generator for BIST applications." International Journal of Microwave and Wireless Technologies 6, no. 2 (2014): 195–200. http://dx.doi.org/10.1017/s1759078714000105.

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This paper presents a circuit architecture for a new integrated on chip test method for microwave circuits. The proposed built-in-self-test (BIST) cell targets a direct low-cost measurement technique of the gain and the 1 dB input compression point (CP1) of a K-band satellite receiver in the 18–22 GHz frequency bandwidth. A signal generator at the radiofrequency (RF) front end input of the device under test (DUT) has been integrated on the same chip. To inject this RF signal, a loopback technique has been used and the design has been accommodated for it. This paper focuses on the design of the

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4

Mesadri, Conrado K., Aziz Doukkali, Philippe Descamps, and Christophe Kelma. "A new methodology for optimal RF DFT sensor design." International Journal of Microwave and Wireless Technologies 4, no. 5 (2012): 515–21. http://dx.doi.org/10.1017/s1759078712000499.

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In this paper, a new methodology to compare the robustness of sensor structures employed in radiofrequency design for test (RF DFT) architectures for RF integrated circuits (ICs) is proposed. First, the yield loss and defect level of the test technique is evaluated using a statistical model of the Circuit under Test (obtained through non-parametric statistics and copula theory). Then, by carrying out the dispersion analysis of the sensor architecture, a figure of merit is established. This methodology reduces the number of iterations in the design flow of RF DFT sensors and makes it possible t

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5

Carpenter, Sona, Zhongxia Simon He, and Herbert Zirath. "Multi-functional D-bandI/Qmodulator/demodulator MMICs in SiGe BiCMOS technology." International Journal of Microwave and Wireless Technologies 10, no. 5-6 (2018): 596–604. http://dx.doi.org/10.1017/s1759078718000338.

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AbstractThis paper presents the design and characterization of a D-band (110–170 GHz) monolithic microwave integrated direct carrier quadrature modulator and demodulator circuits with on-chip quadrature local oscillator (LO) phase shifter and radio frequency (RF) balun fabricated in a 130 nm SiGe BiCMOS process withft/fmaxof 250 GHz/400 GHz. These circuits are suitable for low-power ultra-high-speed wireless communication and can be used in both homodyne and heterodyne architectures. In single-sideband operation, the modulator demonstrates a maximum conversion gain of 9.8 dB with 3-dB RF bandw

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6

Watanabe, Glenn, Jeff Ortiz, and Rick Holbrook. "High performance rf front end circuits using SiGe:C BiCMOS+copper technologies." Applied Surface Science 224, no. 1-4 (2004): 405–9. http://dx.doi.org/10.1016/j.apsusc.2003.08.074.

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7

Vashchenko, V., A. Concannon, M. ter Beek, and P. Hopper. "LVTSCR structures for latch-up free ESD protection of BiCMOS RF circuits." Microelectronics Reliability 43, no. 1 (2003): 61–69. http://dx.doi.org/10.1016/s0026-2714(02)00125-7.

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8

Ker, Ming-Dou, Yuan-Wen Hsiao, and Woei-Lin Wu. "ESD-Protection Design With Extra Low-Leakage-Current Diode String for RF Circuits in SiGe BiCMOS Process." IEEE Transactions on Device and Materials Reliability 6, no. 4 (2006): 517–27. http://dx.doi.org/10.1109/tdmr.2006.883153.

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9

Nam, I., and Kwyro Lee. "High-performance RF mixer and operational amplifier BiCMOS circuits using parasitic vertical bipolar transistor in CMOS technology." IEEE Journal of Solid-State Circuits 40, no. 2 (2005): 392–402. http://dx.doi.org/10.1109/jssc.2004.840982.

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10

Lahbib, Insaf, Sidina Wane, Aziz Doukkali, et al. "Reliability analysis of BiCMOS SiGe:C technology under aggressive conditions for emerging RF and mm-wave applications: proposal of reliability-aware circuit design methodology." International Journal of Microwave and Wireless Technologies 10, no. 5-6 (2018): 690–99. http://dx.doi.org/10.1017/s1759078718000624.

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AbstractIn this contribution, the impact of extreme environmental conditions in terms of energy-level radiation of protons on silicon–germanium (SiGe)-integrated circuits is experimentally studied. Canonical representative structures including linear (passive interconnects/antennas) and non-linear (low-noise amplifiers) are used as carriers for assessing the impact of aggressive stress conditions on their performances. Perspectives for holistic modeling and characterization approaches accounting for various interaction mechanisms (substrate resistivity variations, couplings/interferences, drif

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11

Voldman, Steven H., Susan E. Strang, and Donald Jordan. "An automated design system methodology and strategy for electrostatic discharge protection circuits in RF CMOS and BiCMOS silicon germanium technology." Journal of Electrostatics 59, no. 3-4 (2003): 257–83. http://dx.doi.org/10.1016/s0304-3886(03)00105-0.

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12

Racanelli, M., and P. Kempf. "SiGe BiCMOS Technology for RF Circuit Applications." IEEE Transactions on Electron Devices 52, no. 7 (2005): 1259–70. http://dx.doi.org/10.1109/ted.2005.850696.

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13

Torres Matabosch, Núria, Fabio Coccetti, Mehmet Kaynak, Beatrice Espana, Bernd Tillack, and Jean-Louis Cazaux. "Equivalent circuit model of reliable RF-MEMS switches for component synthesis, fabrication process characterization and failure analysis." International Journal of Microwave and Wireless Technologies 6, no. 1 (2013): 73–81. http://dx.doi.org/10.1017/s1759078713000871.

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An accurate and very large band (30–110 GHZ) lumped element equivalent circuit model of capacitive RF-MEMS components based on a standard 250 nm BiCMOS technology is presented. This model is able to predict the effect of the fabrication process dispersion, synthesize new components and monitor the failure mechanisms. Moreover, a reliability study is performed in order to define a screening criterion (VPOUT > 36 V and |VPIN − VPOUT| ≤ 1) based on which a selection of the devices with optimal performance in terms of RF and lifetime performance can be made. Finally, a very quick effective tech

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14

del Pino, J., Sunil L. Khemchandani, D. Galante-Sempere, and C. Luján-Martínez. "A Compact Size Wideband RF-VGA Based on Second Generation Controlled Current Conveyors." Electronics 9, no. 10 (2020): 1600. http://dx.doi.org/10.3390/electronics9101600.

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This paper presents a methodology to design a wideband radio frequency variable gain amplifier (RF-VGA) in a low-cost SiGe BiCMOS 0.35 μm process. The circuit uses two Class A amplifiers based on second-generation controlled current conveyors (CCCII). The main feature of this circuit is the wideband input match along with a reduced NF (5.5–9.6 dB) and, to the authors’ knowledge, the lowest die footprint reported (62 × 44 μm2 area). The implementation of the RF-VGA based on CCCII allows a wideband input match without the need of passive elements. Due to the nature of the circuit, when the gain

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15

Karthaus, Udo, Stephan Ahles, Ahmed Elmaghraby, and Horst Wagner. "A 2-bit, 3.1 GS/s, band-pass DSM receiver for active antenna systems." International Journal of Microwave and Wireless Technologies 5, no. 3 (2013): 329–34. http://dx.doi.org/10.1017/s1759078713000305.

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This paper presents a radio frequency (RF) continuous-time band-pass delta sigma modulator (CT BP DSM) receiver realized in a 180 nm SiGe BiCMOS technology. It also provides an introduction to active antenna systems (AAS) for cellular infrastructure base stations, which is the target application for this RF integrated circuit (IC). The internal quantizer and feedback digital to analog converter (DAC) resolution of the CT BP DSM is 2 bit. Without applying DAC linearization techniques such as trimming or dynamic element matching being utilized, measured performance parameters include an SNR and

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16

Xiang, Yong, Yan Bin Luo, Ren Jie Zhou, and Cheng Yan Ma. "A Low Noise Amplifier with 1.1dB Noise Figure and +17dBm OIP3 for GPS RF Receivers." Applied Mechanics and Materials 336-338 (July 2013): 1490–95. http://dx.doi.org/10.4028/www.scientific.net/amm.336-338.1490.

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A 1.575GHz SiGe HBT(heterojunction bipolar transistor) low-noise-amplifier(LNA) optimized for Global Positioning System(GPS) L1-band applications was presented. The designed LNA employed a common-emitter topology with inductive emitter degeneration to simultaneously achieve low noise figure and input impedance matching. A resistor-bias-feed circuit with a feedback resistor was designed for the LNA input transistor to improve the gain compression and linearity performance. The LNA was fabricated in a commercial 0.18µm SiGe BiCMOS process. The LNA achieves a noise figure of 1.1dB, a power gain o

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17

Deen, M. J., та Z. X. Yan. "Unique dc characteristics of a new gated lateral pnp bipolar junction transistor (BJT) using 0.8 μm BiCMOS technology". Canadian Journal of Physics 74, S1 (1996): 189–94. http://dx.doi.org/10.1139/p96-857.

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In this paper, the detailed device dc performance of a gated lateral pnp (LPNP) device that has five terminals, collector C, base B, emitter E, gate G, and substrate S, and is fabricated in a 0.8 μm BiCMOS technology is described. Because this gated LPNP has two inputs and one output, it shows unique dc characteristics of variable current gain, βF, of 102 ~ 104 with VG variations of 0.4 to – 0.4 V; variable transconductance, gM, which increases 3 ~ 10 times as VE increases from 0.4 to 0.7 V. Based on these unique features, this new device is attractive for some analog circuit applications; for

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18

Heredia, Julio, Miquel Ribó, Lluís Pradell, et al. "Miniature Switchable Millimeter-Wave BiCMOS Low-Noise Amplifier at 120/140 GHz Using an HBT Switch." Micromachines 10, no. 10 (2019): 632. http://dx.doi.org/10.3390/mi10100632.

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A 120–140 GHz frequency-switchable, very compact low-noise amplifier (LNA) fabricated in a 0.13 µm SiGe:C BiCMOS technology is proposed. A single radio-frequency (RF) switch composed of three parallel hetero junction bipolar transistors (HBTs) in a common-collector configuration and a multimodal three-line microstrip structure in the input matching network are used to obtain a LNA chip of miniaturized size. A systematic design procedure is applied to obtain a perfectly balanced gain and noise figure in both frequency states (120 GHz and 140 GHz). The measured gain and noise figure are 14.2/14.

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19

Pratt, C. A., J. A. Buford, and J. L. Smith. "Adaptive control for backward quadrupedal walking V. Mutable activation of bifunctional thigh muscles." Journal of Neurophysiology 75, no. 2 (1996): 832–42. http://dx.doi.org/10.1152/jn.1996.75.2.832.

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1. In this, the fifth article in a series to assess changes in posture, hindlimb dynamics, and muscle synergies associated with backward (BWD) quadrupedal walking, we compared the recruitment of three biarticular muscles of the cat's anterior thigh (anterior sartorius, SAa; medial sartorius, SAm; rectus femoris, RF) for forward (FWD) and BWD treadmill walking. Electromyography (EMG) records from these muscles, along with those of two muscles (semitendinosus, ST; anterior biceps femoris, ABF) studied previously in this series, were synchronized with kinematic data digitized from high-speed cine

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20

Tartarin, J. G., G. Cibiel, A. Monroy, V. Le Goascoz, and J. Graffeuil. "Optimizing SiGe HBTs technology using small-signal and high frequency noise device's modeling." MRS Proceedings 809 (2004). http://dx.doi.org/10.1557/proc-809-b6.2.

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ABSTRACTThe rapid expansion of SiGe technologies during the last decade essentially due to civil telecommunication's applications have led Si/SiGe based heterojunction bipolar transistors (HBTs) to excellent performance levels, allowing high frequency low noise circuit designs such as linear low noise amplifiers( RF noise) or also low-phase noise oscillators (LF noise). Among these technologies, the SiGe BiCMOS one integrates digital and RF functions on the same chip. Fast improvements of the technological process have been performed thanks to large efforts allowed to characterization and mode

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21

Mende, Ralph. "Highly Integrated Radar Sensor-on-Chip." Frequenz 66, no. 5-6 (2012). http://dx.doi.org/10.1515/freq-2012-0031.

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AbstractA highly integrated 24 GHz radar sensor is presented, based on a Radio Frequency Integrated Circuit (RFIC) which was specifically developed for a Frequency Modulated Shift Keying (FMSK) based Radar system design. Antenna, waveform, the Radio Frequency (RF) and Digital Signal Processor (DSP) module, the software design, cost and performance aspects will be described. The significant technical and economical advantages of the implemented Silicon-Germanium (SiGe) Bipolar CMOS (BiCMOS) transceiver are demonstrated. Some automotive and other applications based on this technology and new rad

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22

Freeman, G., K. Schonenberg, D. Ahlgren, et al. "Toward RF System-Level Integration: Process Integration Issues in Sige BICMOS." MRS Proceedings 533 (1998). http://dx.doi.org/10.1557/proc-533-19.

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AbstractThe SiGe HBT, integrated with CMOS devices on the same chip, will be the first integrated device combination to realize the long-standing technology goal of fabricating RF systems on a chip. It has been demonstrated that the HBT device can replace the standard GaAs front-end of RF systems and take advantage of the reduced cost available from Si technologies in 200–300mm wafers. However, the SiGe HBT can only be part of a large-scale RF system on a chip when, in the same technology, NFETs and PFETs are provided for low power, low frequency digital logic, and a suite of resistors, capaci

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