Academic literature on the topic 'Class-E power amplifier'

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Journal articles on the topic "Class-E power amplifier"

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Nadir, Z., and F. Touati. "Class-E Amplifier Design Improvements for GSM Frequencies." Journal of Engineering Research [TJER] 7, no. 2 (2011): 74. http://dx.doi.org/10.24200/tjer.vol8iss1pp74-82.

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Efficient power amplifiers are essential in portable battery-operated systems such as mobile phones. Also, the power amplifier (PA) is the most power-consuming building block in the transmitter of a portable system. This paper investigates how the efficiency of the power amplifier (which is beneficial for multiple applications in communcation sector) can be improved by increasing the efficiency of switching mode class E power amplifiers for frequencies of 900 MHz and 1800 MHz. The paper tackles modeling, design improvements and verification through simulation for higher efficiencies. This is t
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Modzelewski, Juliusz, and Mirosław Mikołajewski. "High-Frequency Power Amplitude Modulators with Class-E Tuned Amplifiers." Journal of Telecommunications and Information Technology, no. 4 (June 26, 2023): 79–86. http://dx.doi.org/10.26636/jtit.2008.4.903.

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A high-frequency power amplifier used in a drain amplitude modulator must have linear dependence of output HF voltage Vo versus its supply voltage VDD. This condition essential for obtaining low-level envelope distortions is met by a theoretical class-E amplifier with a linear shunt capacitance of the switch. In this paper the influence of non-linear output capacitance of the transistor in the class-E amplifier on its Vo(VDD) characteristic is analyzed using PSPICE simulations of the amplifiers operating at frequencies 0.5 MHz, 5 MHz and 7 MHz. These simulations have proven that distortions of
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Ortega-Gonzalez, F. J. "High Power Wideband Class-E Power Amplifier." IEEE Microwave and Wireless Components Letters 20, no. 10 (2010): 569–71. http://dx.doi.org/10.1109/lmwc.2010.2064760.

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Ozen, Mustafa, Rik Jos, and Christian Fager. "Continuous Class-E Power Amplifier Modes." IEEE Transactions on Circuits and Systems II: Express Briefs 59, no. 11 (2012): 731–35. http://dx.doi.org/10.1109/tcsii.2012.2228392.

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Dat, Vuong, The Son Tran, Phan Thi Lan Anh, Dang Quang Hien, and Nguyen Trang. "Analysis and design of class-E power amplifier considering MOSFET nonlinear capacitance." International Journal of Power Electronics and Drive Systems (IJPEDS) 13, no. 1 (2022): 23–29. https://doi.org/10.11591/ijpeds.v13.i1.pp23-29.

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Class-E power amplifiers are integrated into many applications because their simple design and high performance. The efficiency of the power amplifier is significantly impacted by the nonlinear characteristic of the switching device, which is not analyzed clearly in theory. The nonlinear drain-to-source parasitic capacitance of the power transistor and the linear external capacitance are both contributed to the optimum conditions for obtaining the exact shunt capacitance. In this paper, a high-efficiency class-E power amplifier with shunt capacitance is designed with the consideration of both
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Lee, Dongho. "Second Harmonic Frequency Adjustment Strategy for Class-E Amplifier Design." International Journal of Electrical and Electronics Research 11, no. 3 (2023): 658–61. http://dx.doi.org/10.37391/ijeer.110303.

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Class-E amplifiers are a type of switching amplifiers with an efficiency that approaches 100%. The harmonic frequency is very important in the design of Class-E amplifiers. In this study, the second harmonic frequency is considered in the design of a Class-E amplifier. The Class-E amplifier has been fabricated on FR4 and has demonstrated a power-added efficiency (PAE) of 74.5% at 1.01 GHz. This result shows that the termination of the second-harmonic output is essential for switching amplifiers.
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Vuong, Dat, Tran The Son, Anh Phan Thi Lan, Hien Dang Quang, and Trang Nguyen. "Analysis and design of class-E power amplifier considering MOSFET nonlinear capacitance." International Journal of Power Electronics and Drive Systems (IJPEDS) 13, no. 1 (2022): 23. http://dx.doi.org/10.11591/ijpeds.v13.i1.pp23-29.

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Class-E power amplifiers are integrated into many applications because their simple design and high performance. The efficiency of the power amplifier is significantly impacted by the nonlinear characteristic of the switching device, which is not analyzed clearly in theory. The nonlinear drain-to-source parasitic capacitance of the power transistor and the linear external capacitance are both contributed to the optimum conditions for obtaining the exact shunt capacitance. In this paper, a high-efficiency class-E power amplifier with shunt capacitance is designed with the consideration of both
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Mikolajewski, Miroslaw. "A Transformer Class E Amplifier." Archives of Electrical Engineering 63, no. 4 (2014): 621–33. http://dx.doi.org/10.2478/aee-2014-0043.

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Abstract In a high-efficiency Class E ZVS resonant amplifier a matching and isolation transformer can replace some or even all inductive components of the amplifier thus simplifying the circuit and reducing its cost. In the paper a theoretical analysis, a design example and its experimental verification for a transformer Class E amplifier are presented. In the experimental amplifier with a transformer as the only inductive component in the circuit high efficiency ηMAX = 0.95 was achieved for supply voltage VI = 36 V, maximum output power POMAX = 100 W and the switching frequency f = 300 kHz. M
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Wei, Cai1 Jian Xu 2. and Liang Huang3. "LOW POWER SI CLASS E POWER AMPLIFIER AND RF SWITCH FOR HEALTH CARE." Informatics Engineering, an International Journal (IEIJ) 04, dec (2016): 01–08. https://doi.org/10.5121/ieij.2016.4402.

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This research was to design a 2.4 GHz class E Power Amplifier (PA) for health care, with 0.18um Semiconductor Manufacturing International Corporation CMOS technology by using Cadence software. And also RF switch was designed at cadence software with power Jazz 180nm SOI process. The ultimate goal for such application is to reach high performance and low cost, and between high performance and low power consumption design. This paper introduces the design of a 2.4GHz class E power amplifier and RF switch design. PA consists of cascade stage with negative capacitance. This power amplifier can tra
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Anand, Dr Priyanka. "Designing CMOS based Class E Power Amplifier." International Journal for Research in Applied Science and Engineering Technology 7, no. 8 (2019): 889–97. http://dx.doi.org/10.22214/ijraset.2019.8131.

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Dissertations / Theses on the topic "Class-E power amplifier"

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Kubowicz, Richard. "Class-E power amplifier." Thesis, National Library of Canada = Bibliothèque nationale du Canada, 2000. http://www.collectionscanada.ca/obj/s4/f2/dsk1/tape4/PQDD_0017/MQ53437.pdf.

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Chan, Chung-Kei Thomas. "CMOS class E power amplifier for mobile communications." Thesis, Imperial College London, 2003. http://hdl.handle.net/10044/1/8524.

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Al-Shahrani, Saad Mohammed. "Design of Class-E Radio Frequency Power Amplifier." Diss., Virginia Tech, 2001. http://hdl.handle.net/10919/11116.

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Power amplifiers (PA) are typically the most power-consuming building blocks of RF transceivers. Therefore, the design of a high-efficiency radio frequency power amplifier is the most obvious solution to overcoming the battery lifetime limitation in the portable communication systems. A power amplifier's classes (A, AB, B, C, F, E, etc), and design techniques (Load-pull and large-signal S-parameters techniques) are presented. The design accuracy of class-A power amplifier based on the small-signal S-parameters was investigated, where compression in the power gain was used as an indicator fo
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Rahman, Md Rejaur. "Class E GaN Power Amplifier Design for WiMAX Base Stations." Thesis, Université d'Ottawa / University of Ottawa, 2016. http://hdl.handle.net/10393/34231.

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Modern wireless communication systems transmit complex modulated signals with high peak to average ratio in order to deliver high data rates. It demands wide bandwidth and rigorous efficiency performance for power amplifiers. Today’s conventional RF power amplifiers have relatively poor operating efficiency and require more power and area for operation. Therefore, more research on high efficiency power amplifier is crucial to the growth of the wireless industry. Until recent days, WiMAX systems are using technology processes such as Gallium Arsenide (GaAs) and Si LDMOSFET to obtain the perform
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Connor, Mark Anthony. "Design of Power-Scalable Gallium Nitride Class E Power Amplifiers." University of Dayton / OhioLINK, 2014. http://rave.ohiolink.edu/etdc/view?acc_num=dayton1405437893.

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Song, Ping. "A 1.0-V CMOS class-E power amplifier for bluetooth applications /." View abstract or full-text, 2005. http://library.ust.hk/cgi/db/thesis.pl?ELEC%202005%20SONG.

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Book, Stefan. "1kW Class-E solid state power amplifier for cyclotron RF-source." Thesis, Uppsala universitet, FREIA, 2018. http://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-341693.

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This thesis discusses the design, construction and testing of a highefficiency, 100 MHz, 1 kW, Class-E solid state power amplifier. The design was performed with the aid of computer simulations using electronic design software (ADS). The amplifier was constructed around Ampleon's BLF188XR LDMOS transistor in a single ended design. The results for 100 MHz operation show a power added efficiency of 82% at 1200 W pulsed power output. For operation at 102 MHz results show a power added efficiency of 86% at 1050 W pulsed power output. Measurements of the drain- and gate voltage waveforms provide va
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Zhao, Chao. "Design fully-integrated dual-band two-stage class-E CMOS PA." Thesis, University of North Texas, 2015. https://digital.library.unt.edu/ark:/67531/metadc804916/.

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In retrospect we can see that from the last century, wireless electronic technology has been in a rapid state of development. With the popularity of wireless communication, the power amplifier demand is rising. In general, magnitude, maximum noise figure, minimum noise figure, efficiency, and output power are important indicators of the amplifier. The IC industry is exploring how to reduce the additional cost and improve the high-frequency performance. Therefore, designing a strong adaptability and high cost performance of the PA has become a priority. As these technologies advance, the power
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Demir, Ibrahim. "Cmos Class-e Power Amplifier Modelling And Design Including Channel Resistance Effects." Master's thesis, METU, 2005. http://etd.lib.metu.edu.tr/upload/12605657/index.pdf.

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CMOS is the favorite candidate process for the high integration of the wireless communication IC blocks, RF frontend and digital baseband circuitry. Also the design of the RF power amplifier stage is the one of the most important part of the RF CMOS circuit design. Since high frequency and high power simultaneously exists on this stage, devices works on the limits of the process. Therefore standard device models may not be valid enough for a successful design. In the thesis high frequency passive device and MOS transistor models for the CMOS process searched though the literature and presented
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Kutty, Karan. "CLASS-E CASCODE POWER AMPLIFIER ANALYSIS AND DESIGN FOR LONG TERM RELIABILITY." Master's thesis, University of Central Florida, 2010. http://digital.library.ucf.edu/cdm/ref/collection/ETD/id/2703.

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This study investigated the Class-E power amplifier operating at 5.2 GHz. Since the operation of this amplifier applies a lot of stress on the switching transistor, a cascode topology was applied in order to reduce the drain-source voltage stress. Such an amplifier was designed and optimized in order to improve stability, power added efficiency, and matching. A layout for the said design was then created to be fabrication-ready using the TSMC 0.18 um technology. Post-layout simulations were performed in order to realize a more realistic circuit performance with the layout design in mind. Long-
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Books on the topic "Class-E power amplifier"

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Kubowicz, Richard. Class-E power amplifier. National Library of Canada, 2000.

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Hashjani, Tirdad Sowlati. Class E power amplifiers for wireless communications. National Library of Canada = Bibliothèque nationale du Canada, 1997.

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Doyama, Jason. Class E power amplifiers for wireless transceivers. National Library of Canada, 1999.

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Book chapters on the topic "Class-E power amplifier"

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Pan, Lin, Xiaoran Li, and Gang Dong. "Medium Power Class-E Amplifier Design." In Lecture Notes in Electrical Engineering. Springer Nature Singapore, 2022. http://dx.doi.org/10.1007/978-981-19-3387-5_94.

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Narayan, Jay Prakash, Anamika Das, and Ananyo Bhattacharya. "Class-E Power Amplifier-Based Wireless Power Transfer System." In Recent Advances in Power Electronics and Drives. Springer Nature Singapore, 2022. http://dx.doi.org/10.1007/978-981-16-9239-0_29.

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Singh, Jyoti, Megha Agarwal, Vinita Mardi, et al. "Design of Ultra-Low-Power CMOS Class E Power Amplifier." In Proceedings of the International Conference on Microelectronics, Computing & Communication Systems. Springer Singapore, 2017. http://dx.doi.org/10.1007/978-981-10-5565-2_28.

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Ananda, M., and A. B. Kalpana. "An Efficient MOS Class-E Power Amplifier for Wireless LAN Applications." In Lecture Notes in Electrical Engineering. Springer Singapore, 2017. http://dx.doi.org/10.1007/978-981-10-4765-7_19.

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Zhou, Qiang, and Ruikun Mai. "Design of Wireless Power Transfer System for Mobile Devices Based on Class E Amplifier." In Lecture Notes in Electrical Engineering. Springer Nature Singapore, 2024. http://dx.doi.org/10.1007/978-981-97-0873-4_16.

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Sunitha, Archana, and Bhaskar Manickam. "A 2.4 GHz High Efficiency Capacitive Cross Coupled Common Gate Class-E Differential Power Amplifier." In Communications in Computer and Information Science. Springer Singapore, 2019. http://dx.doi.org/10.1007/978-981-32-9767-8_2.

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Chen, Zelin, Dingyuan Tang, Zhiqiang Li, and Wei Zhou. "A 6.78 MHz Class-E Amplifier Based Capacitive Power Transfer System with Approximate Constant Current Output Characteristic." In Lecture Notes in Electrical Engineering. Springer Nature Singapore, 2024. http://dx.doi.org/10.1007/978-981-97-0873-4_11.

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Sokal, Nathan O. "Class-E High-Efficiency RF/Microwave Power Amplifiers: Principles of Operation, Design Procedures, and Experimental Verification." In Analog Circuit Design. Springer US, 2003. http://dx.doi.org/10.1007/0-306-47950-8_14.

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"Class E Zero-Current Switching RF Power Amplifier." In RF Power Amplifiers. John Wiley & Sons, Ltd, 2014. http://dx.doi.org/10.1002/9781118844373.ch6.

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DE LA CRUZ-ESCOBAR, Jorge, Alejandro ALBERTO-SERRANO, Jorge Edmundo MASTACHE-MASTACHE, and Jesús NAMIGTLE-JIMENEZ. "Design and Implement of a Class E Source for possible sputtering application and dielectric barrier discharge." In Engineering and Architecture in the northern part of the State of Mexico. ECORFAN, 2023. http://dx.doi.org/10.35429/h.2023.5.18.28.

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In the following work, a class E voltage amplifier is presented, it can generate an electric arc, thus producing a dielectric barrier discharge (DBD). The design and assembly of this class E amplifier involves a proper selection of high-speed switching components, this amplifier topology was used due to its ability to maintain the transistors in an ideal switching state, thus reducing power losses during on and off transitions, as well as the losses that are due to dissipation. To be used to generate a dielectric barrier discharge, we rely on software model simulations and measurable experimen
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Conference papers on the topic "Class-E power amplifier"

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Aditya, Kunwar, Sushan Pradhan, and Amrit Raj. "Class-E Power Amplifier Design for Wireless Power Transfer." In 2024 IEEE 3rd International Conference on Electrical Power and Energy Systems (ICEPES). IEEE, 2024. http://dx.doi.org/10.1109/icepes60647.2024.10653495.

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Cai, Weizhe, Sheng Luo, Chenyang Xia, et al. "Research on UAV Wireless Power Transfer System Based on Class-E Power Amplifier." In 2024 2nd Power Electronics and Power System Conference (PEPSC). IEEE, 2024. https://doi.org/10.1109/pepsc63375.2024.10823617.

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Kiri, Akito, Kouta Ohara, Yoshihiro Tomita, Seiji Shukuri, Takeshi Yasukouchi, and Tadashi Suetsugu. "Class D and class E selectable power amplifier." In INTELEC 2009 - 2009 International Telecommunications Energy Conference. IEEE, 2009. http://dx.doi.org/10.1109/intlec.2009.5351909.

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Karabegovic, Armin, and Robert M. O'Connell. "Photoswitch-Controlled Class E RF Power Amplifier." In 2006 Twenty-Seventh International Power Modulator Symposium. IEEE, 2006. http://dx.doi.org/10.1109/modsym.2006.365204.

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Franco, Marc, and Allen Katz. "Class-E Silicon Carbide VHF Power Amplifier." In 2007 IEEE/MTT-S International Microwave Symposium. IEEE, 2007. http://dx.doi.org/10.1109/mwsym.2007.380207.

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Mueller, O. M., K. Park, W. A. Edelstein, C. Park, S. S. Bayya, and R. L. Snyder. "A cryogenic class-E RF power amplifier." In Superconductivity and its applications. AIP, 1992. http://dx.doi.org/10.1063/1.43597.

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Santana, Diogo B., Hamilton Klimach, Eric Fabris, and Sergio Bampi. "CMOS RF class-E power amplifier with power control." In 2016 IEEE 7th Latin American Symposium on Circuits & Systems (LASCAS). IEEE, 2016. http://dx.doi.org/10.1109/lascas.2016.7451087.

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He Songbai, Wang Huadong, You Fei, Liao Jichang, and Liu Meirui. "Designing high-efficiency class-E LDMOS power amplifier." In 2007 5th International Conference on Communications, Circuits and Systems. IEEE, 2007. http://dx.doi.org/10.1109/icccas.2007.6250715.

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Kizilbey, N., and O. Kizilbey. "A novel inverse class E power amplifier topology." In 2013 21st Signal Processing and Communications Applications Conference (SIU). IEEE, 2013. http://dx.doi.org/10.1109/siu.2013.6531167.

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Keskin, Nurcan, and Huaping Liu. "Complementary Class-E amplifier for wireless power transfer." In 2015 IEEE 65th Electronic Components and Technology Conference (ECTC). IEEE, 2015. http://dx.doi.org/10.1109/ectc.2015.7159914.

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Reports on the topic "Class-E power amplifier"

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Rutledge, David. High-Efficiency, Class-E RF Power Amplifiers. Defense Technical Information Center, 2001. http://dx.doi.org/10.21236/ada393787.

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