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1

Kubowicz, Richard. "Class-E power amplifier." Thesis, National Library of Canada = Bibliothèque nationale du Canada, 2000. http://www.collectionscanada.ca/obj/s4/f2/dsk1/tape4/PQDD_0017/MQ53437.pdf.

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2

Chan, Chung-Kei Thomas. "CMOS class E power amplifier for mobile communications." Thesis, Imperial College London, 2003. http://hdl.handle.net/10044/1/8524.

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3

Al-Shahrani, Saad Mohammed. "Design of Class-E Radio Frequency Power Amplifier." Diss., Virginia Tech, 2001. http://hdl.handle.net/10919/11116.

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Power amplifiers (PA) are typically the most power-consuming building blocks of RF transceivers. Therefore, the design of a high-efficiency radio frequency power amplifier is the most obvious solution to overcoming the battery lifetime limitation in the portable communication systems. A power amplifier's classes (A, AB, B, C, F, E, etc), and design techniques (Load-pull and large-signal S-parameters techniques) are presented. The design accuracy of class-A power amplifier based on the small-signal S-parameters was investigated, where compression in the power gain was used as an indicator fo
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4

Rahman, Md Rejaur. "Class E GaN Power Amplifier Design for WiMAX Base Stations." Thesis, Université d'Ottawa / University of Ottawa, 2016. http://hdl.handle.net/10393/34231.

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Modern wireless communication systems transmit complex modulated signals with high peak to average ratio in order to deliver high data rates. It demands wide bandwidth and rigorous efficiency performance for power amplifiers. Today’s conventional RF power amplifiers have relatively poor operating efficiency and require more power and area for operation. Therefore, more research on high efficiency power amplifier is crucial to the growth of the wireless industry. Until recent days, WiMAX systems are using technology processes such as Gallium Arsenide (GaAs) and Si LDMOSFET to obtain the perform
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5

Connor, Mark Anthony. "Design of Power-Scalable Gallium Nitride Class E Power Amplifiers." University of Dayton / OhioLINK, 2014. http://rave.ohiolink.edu/etdc/view?acc_num=dayton1405437893.

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6

Song, Ping. "A 1.0-V CMOS class-E power amplifier for bluetooth applications /." View abstract or full-text, 2005. http://library.ust.hk/cgi/db/thesis.pl?ELEC%202005%20SONG.

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7

Book, Stefan. "1kW Class-E solid state power amplifier for cyclotron RF-source." Thesis, Uppsala universitet, FREIA, 2018. http://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-341693.

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This thesis discusses the design, construction and testing of a highefficiency, 100 MHz, 1 kW, Class-E solid state power amplifier. The design was performed with the aid of computer simulations using electronic design software (ADS). The amplifier was constructed around Ampleon's BLF188XR LDMOS transistor in a single ended design. The results for 100 MHz operation show a power added efficiency of 82% at 1200 W pulsed power output. For operation at 102 MHz results show a power added efficiency of 86% at 1050 W pulsed power output. Measurements of the drain- and gate voltage waveforms provide va
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8

Zhao, Chao. "Design fully-integrated dual-band two-stage class-E CMOS PA." Thesis, University of North Texas, 2015. https://digital.library.unt.edu/ark:/67531/metadc804916/.

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In retrospect we can see that from the last century, wireless electronic technology has been in a rapid state of development. With the popularity of wireless communication, the power amplifier demand is rising. In general, magnitude, maximum noise figure, minimum noise figure, efficiency, and output power are important indicators of the amplifier. The IC industry is exploring how to reduce the additional cost and improve the high-frequency performance. Therefore, designing a strong adaptability and high cost performance of the PA has become a priority. As these technologies advance, the power
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9

Demir, Ibrahim. "Cmos Class-e Power Amplifier Modelling And Design Including Channel Resistance Effects." Master's thesis, METU, 2005. http://etd.lib.metu.edu.tr/upload/12605657/index.pdf.

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CMOS is the favorite candidate process for the high integration of the wireless communication IC blocks, RF frontend and digital baseband circuitry. Also the design of the RF power amplifier stage is the one of the most important part of the RF CMOS circuit design. Since high frequency and high power simultaneously exists on this stage, devices works on the limits of the process. Therefore standard device models may not be valid enough for a successful design. In the thesis high frequency passive device and MOS transistor models for the CMOS process searched though the literature and presented
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10

Kutty, Karan. "CLASS-E CASCODE POWER AMPLIFIER ANALYSIS AND DESIGN FOR LONG TERM RELIABILITY." Master's thesis, University of Central Florida, 2010. http://digital.library.ucf.edu/cdm/ref/collection/ETD/id/2703.

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This study investigated the Class-E power amplifier operating at 5.2 GHz. Since the operation of this amplifier applies a lot of stress on the switching transistor, a cascode topology was applied in order to reduce the drain-source voltage stress. Such an amplifier was designed and optimized in order to improve stability, power added efficiency, and matching. A layout for the said design was then created to be fabrication-ready using the TSMC 0.18 um technology. Post-layout simulations were performed in order to realize a more realistic circuit performance with the layout design in mind. Long-
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11

Bozanic, Mladen. "Design methods for integrated switching-mode power amplifiers." Thesis, University of Pretoria, 2011. http://hdl.handle.net/2263/26616.

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While a lot of time and resources have been placed into transceiver design, due to the pace of a conventional engineering design process, the design of a power amplifier is often completed using scattered resources; and not always in a methodological manner, and frequently even by an iterative trial and error process. In this thesis, a research question is posed which enables for the investigation of the possibility of streamlining the design flow for power amplifiers. After thorough theoretical investigation of existing power amplifier design methods and modelling, inductors inevitably used i
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12

Dréan, Sophie. "Oscillateur de puissance en ondes millimétriques." Thesis, Bordeaux 1, 2012. http://www.theses.fr/2012BOR14726/document.

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Ce travail porte sur l'étude d'un oscillateur de puissance contrôlé en tension en ondes millimétriques. L'objectif de la thèse est de concevoir cet oscillateur pour la bande de fréquence utilisée dans les standards IEEE 802.15.3c, IEEE 802.11ad et ECMA TC48, à savoir 56GHz-65GHz. Le principe de l'oscillateur de puissance est développé autour d'un amplificateur de puissance rebouclé pour engendrer un système oscillant. L'amplificateur de puissance développé est un amplicateur à deux étages. Celui de puissance est de classe E et le driver est de classe F. La boucle de retour est basée sur un vec
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13

Smith, Brady Christopher. "MSM photodiode as the switching element in a photoswitch-based class E microwave power amplifier." Diss., Columbia, Mo. : University of Missouri-Columbia, 2008. http://hdl.handle.net/10355/5672.

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Thesis (M.S.)--University of Missouri-Columbia, 2008.<br>The entire dissertation/thesis text is included in the research.pdf file; the official abstract appears in the short.pdf file (which also appears in the research.pdf); a non-technical general description, or public abstract, appears in the public.pdf file. Title from title screen of research.pdf file (viewed on August 14, 2009) Includes bibliographical references.
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14

Riemer, Owen D. "The Theory and Design of Class E Power Amplifiers for Impulse Excitation in Nuclear Magnetic Resonance." Wright State University / OhioLINK, 2021. http://rave.ohiolink.edu/etdc/view?acc_num=wright1625743337280261.

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15

Rashid, S. M. Shahriar. "Design and Heterogeneous Integration of Single and Dual Band Pulse Modulated Class E RF Power Amplifiers." The Ohio State University, 2018. http://rave.ohiolink.edu/etdc/view?acc_num=osu1543505207173487.

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16

Cui, Xian. "Efficient radio frequency power amplifiers for wireless communications." Columbus, Ohio : Ohio State University, 2007. http://rave.ohiolink.edu/etdc/view?acc%5Fnum=osu1195652135.

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17

Juntunen, Eric A. "Low-power, high-efficiency, and high-linearity CMOS millimeter-wave circuits and transceivers for wireless communications." Diss., Georgia Institute of Technology, 2012. http://hdl.handle.net/1853/44703.

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This dissertation presents the design and implementation of circuits and transceivers in CMOS technology to enable many new millimeter-wave applications. A simple approach is presented for accurately modeling the millimeter-wave characteristics of transistors that are not fully captured by contemporary parasitic extraction techniques. Next, the integration of a low-power 60-GHz CMOS on-off keying (OOK) receiver in 90-nm CMOS for use in multi-gigabit per second wireless communications is demonstrated. The use of non-coherent OOK demodulation by a novel demodulator enabled a data throughput of 3
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18

Sowlati, Hashjani Tirdad. "Class E power amplifiers for wireless communications." Thesis, National Library of Canada = Bibliothèque nationale du Canada, 1997. http://www.collectionscanada.ca/obj/s4/f2/dsk2/ftp02/NQ28305.pdf.

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19

Doyama, Jason. "Class E power amplifiers for wireless transceivers." Thesis, National Library of Canada = Bibliothèque nationale du Canada, 1999. http://www.collectionscanada.ca/obj/s4/f2/dsk1/tape8/PQDD_0015/MQ45854.pdf.

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20

Karabegovic, Armin. "Photoswitch-based Class E microwave power amplifer." Diss., Columbia, Mo. : University of Missouri-Columbia, 2007. http://hdl.handle.net/10355/4803.

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Thesis (Ph. D.)--University of Missouri-Columbia, 2007.<br>The entire dissertation/thesis text is included in the research.pdf file; the official abstract appears in the short.pdf file (which also appears in the research.pdf); a non-technical general description, or public abstract, appears in the public.pdf file. Title from title screen of research.pdf file (viewed on February 14, 2008) Vita. Includes bibliographical references.
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21

Hung, Tang Tat 1976. "Class-E power amplifiers and transmitters for RF applications." Thesis, McGill University, 2004. http://digitool.Library.McGill.CA:80/R/?func=dbin-jump-full&object_id=80020.

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This thesis presents the design process of a class E RF power amplifier and a transmitter in a standard CMOS technology. CMOS radio frequency class-E power amplifiers (PA) for GMSK/GFSK modulations have been designed and fabricated using 0.25/0.35mum technologies. The operating frequencies are centered at 1.2GHz and 2.65GHz with 24--26dBm output power. In order to reduce the driving requirement, mode locking techniques are employed for both designs. High efficiency broadband off-chip hybrid ring baluns are used at both input and output for converting signals from single-ended to differe
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22

Wang, Narisi. "X-band class-E power amplifiers with dynamic bias control." Diss., Connect to online resource, 2006. http://gateway.proquest.com/openurl?url_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:dissertation&res_dat=xri:pqdiss&rft_dat=xri:pqdiss:3218998.

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23

Lu, Qing. "Applications of the genetic algorithm optimisation approach in the design of high efficiency microwave class E power amplifiers." Thesis, Northumbria University, 2012. http://nrl.northumbria.ac.uk/13340/.

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In this thesis Genetic Algorithm Optimisation Methods (GA) is studied and for the first time used to design high efficiency microwave class E power amplifiers (PAs) and associated load patch antennas. The difficulties of designing high efficiency PAs is that power transistors are highly non linear and classical design techniques only work for resistive loads. There are currently no high efficient and accurate procedures for design high efficiency PAs. To achieve simplified and accurate design procedure, GA and new design quadratic equations are introduced and applied. The performance analysis
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24

Cambareri, Valerio. "Caratterizzazione e generazione di segnali PWM per amplificatori in classe D ad alta efficienza." Master's thesis, Alma Mater Studiorum - Università di Bologna, 2011. http://amslaurea.unibo.it/2949/.

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The convergence of information technology and consumer electronics towards battery powered portable devices has increased the interest in high efficiency, low dissipation amplifiers. Class D amplifiers are the state of the art in low power consumption and high performance amplification. In this thesis we explore the possibility of exploiting nonlinearities introduced by the PWM modulation, by designing an optimized modulation law which scales its carrier frequency adaptively with the input signal's average power while preserving the SNR, thus reducing power consumption. This is achie
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25

Kurucu, Salur Riza. "A New Design Of Excitation Mechanism To Be Exploited By Modern Rf Excited Co2 Lasers." Master's thesis, METU, 2004. http://etd.lib.metu.edu.tr/upload/12605394/index.pdf.

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On this thesis work, design and construction of an up to date complete RF excitation system was intended. This excitation system is mainly based on highly efficient switching power generators and proper coupling of the power to the object plasma. This new excitation system design should answer the demands of today&#039<br>s progressed CO2 lasers on various power ranges. Though it could be used by a large variety of applications including RF plasma and RF heating, on the first occasion in order to define design considerations, this system is to be exploited by RF excited fast flow and RF excite
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26

Chien, Yuan-Te, and 簡元德. "Research of CMOS Class E Power Amplifier, Adaptive Bias Power Amplifier and Transformer Combined Power Amplifier." Thesis, 2012. http://ndltd.ncl.edu.tw/handle/57723754614600631078.

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碩士<br>國立臺灣大學<br>電信工程學研究所<br>100<br>The growth in wireless communication has strong demands in integrated solution to have faster transmission speed, more distance, and more reliable transmission. Power amplifier is one of the bottlenecks. Traditionally, Ⅲ-Ⅴ high electron mobility transistor, ex. GaAs has the high output power and high power added efficiency. It has certain restrictions and difficulties about using complementary metal-oxide semiconductor to design the power amplifiers. For the reason of system integration and small area to cost down, the fabrication of power amplifiers using co
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Tseng-Hsin, Chiu. "A CMOS 2.4GHz Class-E Power Amplifier." 2003. http://www.cetd.com.tw/ec/thesisdetail.aspx?etdun=U0009-0112200611295360.

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28

Wu, Ja-Dai, and 吳家岱. "RF CMOS Class-E Power Amplifier Design." Thesis, 2007. http://ndltd.ncl.edu.tw/handle/02020170093738417342.

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碩士<br>國立交通大學<br>電子工程系所<br>95<br>An on-chip CMOS Class-E Power Amplifier (PA) implemented in 0.13-�慆 CMOS technology is presented. The Class-E PA includes a Class-F driver and replaces a large RF choke with a small finite dc-feed inductor for on-chip integration. The proposed Class-E PA achieves power added efficiency (PAE) of 48.4 % while delivering 21 dBm output power with the input driving power of -3 dBm at 2.5 GHz. In the design band, 2.3GHz~2.7GHz, PAE is still above 44%. In order to improve the simulation time of RF/Baseband co-simulation the behavior model of proposed PA is presented. T
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29

Chin-Fong, Lin, and 林清風. "Study on Class E RF Power Amplifier." Thesis, 2000. http://ndltd.ncl.edu.tw/handle/44427679986710525653.

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30

Chiu, Tseng-Hsin, and 邱曾鑫. "A CMOS 2.4GHz Class-E Power Amplifier." Thesis, 2003. http://ndltd.ncl.edu.tw/handle/22636927368361578196.

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碩士<br>元智大學<br>電機工程學系<br>91<br>For the last few years, the personal wireless communications system has developed intensively the SOC (system on chip) technologies, and it is becoming clearer that the remarkable amount of growth in the SOC system for the personal wireless communications applications. Now, the overwhelming majority of part element of communication system is implemented in CMOS technology. For this reason, to integrate the whole personal communications system in a chip is very important, and the power amplifier is the key in the integration design. However, the design and implemen
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31

Yu, Hao-Wen, and 俞皓文. "Automatic Matching for Class-E Power Amplifier." Thesis, 2018. http://ndltd.ncl.edu.tw/handle/fg9ckz.

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碩士<br>國立臺北科技大學<br>電子工程系<br>106<br>In this thesis, establishment of Class-E Power Amplifier structure, with MCU detecting parameters in order to finish automatic matching at RLC. To transfer the best power efficiency with traditional Class-E Power Amplifier, it has to go through impedance matching, analysis and design of coupling coil and other complicated calculation, at last, verifying constantly to find the most suitable RLC matching parameters. In the study, using inductive coupling Class-E Power Amplifier to wireless charging. MCU detects efficiency of primary and secondary side, compariso
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32

Rongbang, Song, and 宋榮邦. "The Implementations on Power Amplifier Using Power-Combining Transformer Technique and Broadband Class E Power Amplifiers." Thesis, 2011. http://ndltd.ncl.edu.tw/handle/25858041577326545720.

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碩士<br>國立中央大學<br>電機工程研究所<br>99<br>This thesis studies two categories of power amplifiers which are fully integrated silicon-based power amplifiers using power-combing transformer technique and broadband Class-E power amplifiers. Two Class-E amplifiers were studied in this thesis. The first CMOS broadband Class-E power amplifier was designed by using a negative capacitance to compensate the reactance at the output. The second pHEMT broadband Class-E power amplifier was fulfilled by using dual resonant reactance compensation technique. The measured results are summarized as follow, the CMOS power
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33

Yen, H. L., and 顏宏霖. "Analysis and Application of Class E power Amplifier." Thesis, 2000. http://ndltd.ncl.edu.tw/handle/16465127407515889755.

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碩士<br>國立臺北科技大學<br>機電整合研究所<br>88<br>In this research, we design and analyze a switched Class-E power amplifier, based on standard TSMC 1p4m 0.35 digital CMOS process. Given the design specifications of the Class-E output network (output power, frequency, dc voltage, and loaded Q of the output resonator), passive components of the circuit can be evaluated and based on high frequency and large signal model parameters supplied by CIC. Through analysis and formula derivation, we can obtain related expressions for input power, output power, dc power, power-added efficiency, drain efficiency, and p
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34

Pan, Meng-wei, and 潘孟偉. "Implementations on Fully Integrated Silicon-based Class-E Power Amplifiers and Ka-Band pHEMT Power Amplifier." Thesis, 2010. http://ndltd.ncl.edu.tw/handle/36892139873266514702.

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碩士<br>國立中央大學<br>電機工程研究所<br>98<br>In this thesis, power amplifiers were designed into both silicon-based and pHEMT technologies. Firstly, fully integrated silicon-based high-efficiency Class-E power amplifiers using SiGe and CMOS processes were designed with low-loss impedance matching transformers technique. Secondly, a fully integrated Ka-band pHEMT power amplifier was implemented. The measured results are summarized as below: the CMOS Class-E power amplifier (PA) using transmission line transformer (TLT) technique achieves a power gain of 13.24 dB, an output power at 1-dB gain compression po
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35

Zhuang, Wen-Te, and 莊文德. "A Class E CMOS Power Amplifier for Bluetooth Applications." Thesis, 2004. http://ndltd.ncl.edu.tw/handle/18561983004382088415.

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碩士<br>逢甲大學<br>電子工程所<br>92<br>With recent advance in CMOS process, many essential building blocks for wireless transceivers, such as low-noise amplifier (LNA), mixer, frequency synthesizer, channel selection filter and digital-to-analog converter, have been demonstrated using CMOS technology. However, not much work has been done or reported a CMOS power amplifier (PA) in particular Class E at 2.4GHz. In this thesis, two power amplifiers are designed for Bluetooth application. Each power amplifier includes driver and power stages. The first circuit, its power stage has been implemented in a stan
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Zou, Shan-Ciang, and 鄒善強. "The Theory and Design of Class-E Power Amplifier." Thesis, 2004. http://ndltd.ncl.edu.tw/handle/43662174210355163501.

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碩士<br>國立交通大學<br>電子物理系所<br>92<br>RF power amplifier is at the end of transmitter, and its efficiency will decide the power supply consumption of all systems. In order to satisfy the condition of the CMOS process, we choose in this design the Class E power amplifier for Blue-tooth system. First, in this work, we derive the theory of single-ended power amplifier. Second, we use the fabrication of microwave circuit board to verify the result of theory, and finally adopt the common-gate differential mode Class E power amplifier to be the structure of IC design. In Chapter 3 of this thesis a f
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Yu, Choa-Ho, and 余昭和. "Efficiency Improvement of the Class-AB Power Amplifier adopting Class-E Mode." Thesis, 2006. http://ndltd.ncl.edu.tw/handle/85189969227190403038.

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碩士<br>國立東華大學<br>電機工程學系<br>94<br>This thesis presents an attempt method using a 2.4GHz ISM band of two-stage class-AB power amplifier (PA) WS9901 configured as class-E operation in order to increase the efficiency of the PA. The two-stage class-AB PA (WS9901) can be simulated and modeled using WIN 2um HBT process. The simulated PA module is used to analyze the class-E operation and to improve the efficiency. The implementation of the PCB board adopts a layout circuit from the data sheet. The desired class-E amplifier is slightly modified by using this PCB board. The proposed class-E amplifier a
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Tsou, Wen-An, and 鄒文安. "CMOS Cascode Class E Power Amplifier Design with Linearity Compensation." Thesis, 2010. http://ndltd.ncl.edu.tw/handle/28131528547992525167.

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博士<br>國立交通大學<br>電子研究所<br>98<br>The dissertation presents the design of the cascode Class E power amplifier with AM-AM and AM-PM compensation for polar applications. For integration and reliability analysis in CMOS process, the Class E designed with small dc-feed and using cascode topology has been presented. When the Class E is in supply modulation, the AM-AM and AM-PM distortion is introduced at the RF output signal. This work not only analyzes the cause of the distortion but also presents a compensation technique. When modulating the gate bias voltage of the cascode transistor, the transisto
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Huang, Wei-Zh, and 黃偉誌. "Implementation of Class E Power Amplifier For Magnetic Resonance System." Thesis, 2016. http://ndltd.ncl.edu.tw/handle/33176568580197474643.

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碩士<br>國立中興大學<br>電機工程學系所<br>104<br>This thesis goal is to design the transceiver in wireless power transfer system (WPTs). Transceiver mainly use 13.56 MHz high-power and high-efficiency Class E power amplifiers, which conform A4WP magnetic resonance WPTs standard. First, chapter one is about the simple introduction and the application of WPTs. In chapter two, we will simple present some differences in several types of power amplifier which we commonly used. In chapter three, we focused on the analysis and the discussion in details. By using the theoretical and the mathematical derivation, we c
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40

Faizal, Mohamed, and 穆罕莫德. "Time-domain Modelling & Analysis of Class-E Power Amplifier." Thesis, 2018. http://ndltd.ncl.edu.tw/handle/9abm9v.

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碩士<br>國立交通大學<br>電子研究所<br>107<br>Class-E power amplifers which belong to a class of switching amplifers are among the most efcient of Power Amplifers(PA). And because of their high efciency, they are widely used in RF applications like RADAR, wireless transmission of data, etc.., To design a good Class E PA, it is imperative to understand the reason for losses. And any possible loss that happens in PA is usually due to switching, non-idealities and parasitic components. Keeping this in consideration this thesis will focus on the following : • Derivation of boundary conditions for all currents a
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SUN, YUN-SIANG, and 孫韻翔. "Automatic Matching for Class-E Power Amplifier System and Chip." Thesis, 2019. http://ndltd.ncl.edu.tw/handle/89d5hn.

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碩士<br>國立臺北科技大學<br>電子工程系<br>107<br>This paper uses the traditional class E power amplifier as the infrastructure, with the micro controller Microcontroller model STM32F746G-DISCO. The main function of microcontroller are detecting voltage and controlling capacitance value in RLC circuit to get the most efficiency point in the range of variable capcitance. I make a chip as second side circuit. This chip involve bridge recitier, LDO, SAR ADC, Manchester coding, LC_TANK. The main function of this chip is transfering voltage value to first side by wireless. It can know magnitude of voltage value at
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42

(5931197), Tunir Dey. "Linearizing E- Class Power Amplifier by Using Memoryless Pre-Distortion." Thesis, 2020.

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<div>Radio Frequency Power Amplifiers (PA) are essential components of wireless systems and nonlinear in a permanent way. So, high efficiency and linearity at a time are imperative for power amplifiers. However, it is hard to obtain because high efficiency Power Amplifiers are nonlinear and linear Power Amplifiers have poor efficiency. To meet both linearity and efficiency, the linearization techniques such as Digital Predistortion (DPD) has arrested the most attention in industrial and academic sectors due to provide a compromising data between efficiency and linearity. This thesis proposed o
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43

HUANG, JIAN-HAO, and 黃建豪. "Circuit Design and Implementation of Mega Hertz Class-E Power Amplifier." Thesis, 2017. http://ndltd.ncl.edu.tw/handle/784wcw.

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碩士<br>國立臺南大學<br>電機工程學系碩博士班<br>105<br>Aimed at the RF field application, this thesis studies the mega-hertz circuit design based on the class-E power amplifier. In this circuit, the pulse width modulation is served as the main structure in which an L-C resonant circuit is included for voltage filtering and soft-switching. An impedance-matching circuit is then added between the resonant circuit and load so that the maximum power transfer to the load can be realized. To validate the feasibility, mathematical derivations were made with theoretical simulations and experimental validations. Test res
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Lai, Guan-lun, and 賴冠綸. "Design of Differential Class-E Power Amplifier Using Response Surface Method." Thesis, 2010. http://ndltd.ncl.edu.tw/handle/14966946458004155615.

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碩士<br>逢甲大學<br>電子工程所<br>98<br>In the thesis, a differential class-E power amplifier is designed for using Response Surface Method (RSM) to optimize output power (Pout) and Power Added Efficiency (PAE) of the amplifier and apply to technology of BlueTooth. First stage is CMOS inverter, and second stage is differential amplifier used cascade and self-bias of structure to improve reliability of the circuit in the thesis. Improving reliability can lengthen service life and time that the battery of wireless communication uses. And also, it applies the cross-couple construction to speed up “open” and
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Chen, Sheng Ting, and 陳升亭. "Bias and Supply Modulated CMOS 10 GHz Class-E Power Amplifier." Thesis, 2016. http://ndltd.ncl.edu.tw/handle/37438420231208698472.

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碩士<br>國立清華大學<br>電子工程研究所<br>104<br>Nowadays, polar modulation transmitter is a popular research topic. In this architecture, a RF signal is separated into two parts: its amplitude and phase. The phase component is fed into a power amplifier, and the amplitude component is fed into a control circuit that modulates the supply voltage of the power amplifier accordingly. Thus in a polar modulation system, it is allowed to use a highly non-linear power amplifier such as a class-E amplifier. Compared to ordinary power amplification, this architecture favors both high linearity and power-added-efficie
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Wang, Roger Randolph, and 王磊中. "CMOS Class-E Power Amplifier Design for X-Band EER Transmitter." Thesis, 2008. http://ndltd.ncl.edu.tw/handle/57091639625156808238.

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碩士<br>國立交通大學<br>電子工程系所<br>96<br>A first X-Band fully integrated Class-E power amplifier is proposed in this thesis and fabricated in 0.18-�慆 CMOS technology. Injection locking technique is applied to help the reach of the X-Band operation. Measurement results show that the proposed Class-E power amplifier could achieve 17% power added efficiency (PAE) and delivering an output power of 10.75dBm with gain 20dB at 8.41 GHz. Also, the PAE is over 14% over the frequency range 8.35 GHz to 8.45 GHz. In order to improve the modulation accuracy of the proposed circuit under the EER transmitter, a compe
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游振威. "Design of Cascode Class E Power Amplifier with Harmonic Suppression Technique." Thesis, 2007. http://ndltd.ncl.edu.tw/handle/52708788113819559663.

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碩士<br>國立交通大學<br>電子工程系所<br>96<br>In order to obtain moderate chip area, high output power, and high power efficiency simultaneously, nonlinear Class-E power amplifier should be the best choice. Cascode Class-E PA provides better power-added efficiency (PAE) than any other topologies such as differential, common-gate, or common-source. Although Class-E power amplifiers have high power-added efficiency (PAE), poor harmonic suppression would make the whole communication system with nonlinear power amplifier be out of transmission specification. To conquer the drawback of nonlinear power amplifier,
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葉光益. "Design a Class-E CMOS Power Amplifier with Quarter-Micron Process." Thesis, 2005. http://ndltd.ncl.edu.tw/handle/43894037206914960338.

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碩士<br>明新科技大學<br>電子工程研究所<br>93<br>In radio frequency integrated circuit (RF IC) design, the power amplifier is one of the most important circuits. Its output power and power-added efficiency (PAE) in wireless communication system has the dominant impact, especially in the performance and efficiency of the system. A class-E power amplifier provides the higher PAE and allows the operation of this system in partial non-linearity. Thus, the RF design system obtains the more elasticity. However, the recent 2.4GHz full complementary metal-oxide-semiconductor (CMOS) class-E power amplifier is seldom c
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Huang, Po-Shun, and 黃伯勛. "Research of Fully Integrated High Efficiency Class-E Power Amplifier and 2.4GHz/5GHz Dual Band High Efficiency Power Amplifier." Thesis, 2015. http://ndltd.ncl.edu.tw/handle/12746882457503119161.

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碩士<br>國立臺灣大學<br>電信工程學研究所<br>103<br>With the rapid growth of semiconductor process, demand of integrated circuit and development of wireless communication systems, implementing RF integrated circuit with CMOS process become a new development trend for the industry market. In the transceiver design, most of power consumption is come from power amplifier, thus power amplifier is a key component for RF circuit design. Because of widespread of mobile devices, high efficiency becomes a focus point for power amplifier design. As mentioned above, the design and analysis of high efficiency CMOS power a
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Huang, Cheng-Chieh, and 黃鉦傑. "Study of Application for Class E Power Amplifier in Plasma Cleaning Room." Thesis, 2014. http://ndltd.ncl.edu.tw/handle/ykza52.

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碩士<br>國立高雄應用科技大學<br>電機工程系博碩士班<br>102<br>Base on the resource & energy increasingly shortage on earth, Thereby the environmental consciousness care and electronic technology quick development that forcedly made the Semi-Conduct Wafer and components of PCB will tend to microminiaturization, complication, high density substrate, huge size display of LCD industrial, so that how to raise the yield rate and cleaning level of manufacture process that will be very important study. The plasma process was widely applied on the film growth of different materials and the circuit etching of PCB board and m
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