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Journal articles on the topic 'Class-E power amplifier'

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1

Nadir, Z., and F. Touati. "Class-E Amplifier Design Improvements for GSM Frequencies." Journal of Engineering Research [TJER] 7, no. 2 (2011): 74. http://dx.doi.org/10.24200/tjer.vol8iss1pp74-82.

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Efficient power amplifiers are essential in portable battery-operated systems such as mobile phones. Also, the power amplifier (PA) is the most power-consuming building block in the transmitter of a portable system. This paper investigates how the efficiency of the power amplifier (which is beneficial for multiple applications in communcation sector) can be improved by increasing the efficiency of switching mode class E power amplifiers for frequencies of 900 MHz and 1800 MHz. The paper tackles modeling, design improvements and verification through simulation for higher efficiencies. This is t
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2

Modzelewski, Juliusz, and Mirosław Mikołajewski. "High-Frequency Power Amplitude Modulators with Class-E Tuned Amplifiers." Journal of Telecommunications and Information Technology, no. 4 (June 26, 2023): 79–86. http://dx.doi.org/10.26636/jtit.2008.4.903.

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A high-frequency power amplifier used in a drain amplitude modulator must have linear dependence of output HF voltage Vo versus its supply voltage VDD. This condition essential for obtaining low-level envelope distortions is met by a theoretical class-E amplifier with a linear shunt capacitance of the switch. In this paper the influence of non-linear output capacitance of the transistor in the class-E amplifier on its Vo(VDD) characteristic is analyzed using PSPICE simulations of the amplifiers operating at frequencies 0.5 MHz, 5 MHz and 7 MHz. These simulations have proven that distortions of
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3

Ortega-Gonzalez, F. J. "High Power Wideband Class-E Power Amplifier." IEEE Microwave and Wireless Components Letters 20, no. 10 (2010): 569–71. http://dx.doi.org/10.1109/lmwc.2010.2064760.

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4

Ozen, Mustafa, Rik Jos, and Christian Fager. "Continuous Class-E Power Amplifier Modes." IEEE Transactions on Circuits and Systems II: Express Briefs 59, no. 11 (2012): 731–35. http://dx.doi.org/10.1109/tcsii.2012.2228392.

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5

Dat, Vuong, The Son Tran, Phan Thi Lan Anh, Dang Quang Hien, and Nguyen Trang. "Analysis and design of class-E power amplifier considering MOSFET nonlinear capacitance." International Journal of Power Electronics and Drive Systems (IJPEDS) 13, no. 1 (2022): 23–29. https://doi.org/10.11591/ijpeds.v13.i1.pp23-29.

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Class-E power amplifiers are integrated into many applications because their simple design and high performance. The efficiency of the power amplifier is significantly impacted by the nonlinear characteristic of the switching device, which is not analyzed clearly in theory. The nonlinear drain-to-source parasitic capacitance of the power transistor and the linear external capacitance are both contributed to the optimum conditions for obtaining the exact shunt capacitance. In this paper, a high-efficiency class-E power amplifier with shunt capacitance is designed with the consideration of both
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6

Lee, Dongho. "Second Harmonic Frequency Adjustment Strategy for Class-E Amplifier Design." International Journal of Electrical and Electronics Research 11, no. 3 (2023): 658–61. http://dx.doi.org/10.37391/ijeer.110303.

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Class-E amplifiers are a type of switching amplifiers with an efficiency that approaches 100%. The harmonic frequency is very important in the design of Class-E amplifiers. In this study, the second harmonic frequency is considered in the design of a Class-E amplifier. The Class-E amplifier has been fabricated on FR4 and has demonstrated a power-added efficiency (PAE) of 74.5% at 1.01 GHz. This result shows that the termination of the second-harmonic output is essential for switching amplifiers.
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Vuong, Dat, Tran The Son, Anh Phan Thi Lan, Hien Dang Quang, and Trang Nguyen. "Analysis and design of class-E power amplifier considering MOSFET nonlinear capacitance." International Journal of Power Electronics and Drive Systems (IJPEDS) 13, no. 1 (2022): 23. http://dx.doi.org/10.11591/ijpeds.v13.i1.pp23-29.

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Class-E power amplifiers are integrated into many applications because their simple design and high performance. The efficiency of the power amplifier is significantly impacted by the nonlinear characteristic of the switching device, which is not analyzed clearly in theory. The nonlinear drain-to-source parasitic capacitance of the power transistor and the linear external capacitance are both contributed to the optimum conditions for obtaining the exact shunt capacitance. In this paper, a high-efficiency class-E power amplifier with shunt capacitance is designed with the consideration of both
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8

Mikolajewski, Miroslaw. "A Transformer Class E Amplifier." Archives of Electrical Engineering 63, no. 4 (2014): 621–33. http://dx.doi.org/10.2478/aee-2014-0043.

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Abstract In a high-efficiency Class E ZVS resonant amplifier a matching and isolation transformer can replace some or even all inductive components of the amplifier thus simplifying the circuit and reducing its cost. In the paper a theoretical analysis, a design example and its experimental verification for a transformer Class E amplifier are presented. In the experimental amplifier with a transformer as the only inductive component in the circuit high efficiency ηMAX = 0.95 was achieved for supply voltage VI = 36 V, maximum output power POMAX = 100 W and the switching frequency f = 300 kHz. M
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9

Wei, Cai1 Jian Xu 2. and Liang Huang3. "LOW POWER SI CLASS E POWER AMPLIFIER AND RF SWITCH FOR HEALTH CARE." Informatics Engineering, an International Journal (IEIJ) 04, dec (2016): 01–08. https://doi.org/10.5121/ieij.2016.4402.

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This research was to design a 2.4 GHz class E Power Amplifier (PA) for health care, with 0.18um Semiconductor Manufacturing International Corporation CMOS technology by using Cadence software. And also RF switch was designed at cadence software with power Jazz 180nm SOI process. The ultimate goal for such application is to reach high performance and low cost, and between high performance and low power consumption design. This paper introduces the design of a 2.4GHz class E power amplifier and RF switch design. PA consists of cascade stage with negative capacitance. This power amplifier can tra
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10

Anand, Dr Priyanka. "Designing CMOS based Class E Power Amplifier." International Journal for Research in Applied Science and Engineering Technology 7, no. 8 (2019): 889–97. http://dx.doi.org/10.22214/ijraset.2019.8131.

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11

Du, Jian-Chang, Zhi-Gong Wang, Jian Xu, and Yi-Fan Yang. "A Current-Injection Class-E Power Amplifier." IEEE Microwave and Wireless Components Letters 30, no. 8 (2020): 775–78. http://dx.doi.org/10.1109/lmwc.2020.3000994.

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12

Dehqan, A. R., S. Toofan, and H. Lotfi. "Floating Bulk Cascode Class-E Power Amplifier." IEEE Transactions on Circuits and Systems II: Express Briefs 66, no. 4 (2019): 537–41. http://dx.doi.org/10.1109/tcsii.2018.2867016.

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13

Yousefi, Mousa, Ziaadin Daie Koozehkanani, Jafar Sobhi, Hamid Jangi, and Nasser Nasirezadeh. "Efficiency Analysis of Low Power Class-E Power Amplifier." Modern Applied Science 8, no. 5 (2014): 19. http://dx.doi.org/10.5539/mas.v8n5p19.

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This paper presents an analysis of effect of inductor and switch losses on output power and efficiency of low power class-E power amplifier. This structure is suitable for integrated circuit implementation. Since on chip inductors have large losses than the other elements, the effect of their losses on efficiency has been investigated. Equations for the efficiency have been derived and plotted versus the value of inductors and switch losses. Derived equations are evaluated using MATLAB. Also, Cadence Spectre has been used for schematic simulation. Results show a fair matching between simulated
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14

Jang, Jaemin, Hongtak Lee, Changkun Park, and Songcheol Hong. "A class-E CMOS RF power amplifier with cascaded class-D driver amplifier." Microwave and Optical Technology Letters 50, no. 2 (2008): 470–73. http://dx.doi.org/10.1002/mop.23106.

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15

Choi, Ui-Gyu, and Jong-Ryul Yang. "A 120 W Class-E Power Module with an Adaptive Power Combiner for a 6.78 MHz Wireless Power Transfer System." Energies 11, no. 8 (2018): 2083. http://dx.doi.org/10.3390/en11082083.

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In this article, a highly efficient power module is presented with two class-E power amplifiers and an adaptive power combiner for transmitting output powers >100 W at 6.78 MHz in a wireless power transfer system. The losses caused by the combiners and interstage matching circuits or mismatching between the amplifier, and the combiners can significantly reduce the overall efficiency of the power module. To achieve an efficient combination of the output amplifier signals, the adaptive power combiner is proposed based on the consideration of the optimum load impedance characteristics of the p
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16

Cipriani, Elisa, Paolo Colantonio, Franco Giannini, and Rocco Giofré. "Theory and experimental validation of a Class E PA above theoretical maximum frequency." International Journal of Microwave and Wireless Technologies 1, no. 4 (2009): 293–99. http://dx.doi.org/10.1017/s1759078709990201.

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This paper reports an investigation and a proposed solution to design Class E power amplifiers above the theoretical maximum frequency allowed by the adopted active device. Starting from the traditional time domain analysis, a numerical algorithm has been developed and presented in order to extend Class E feasibility through the optimization of the output voltage waveform. A hybrid Class E amplifier in laterally diffused metal oxide semiconductor (LDMOS) technology has been designed and measured. The final amplifier shows an output power of more than 10 W with an associated efficiency of 49% (
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17

Hamadou, Aissatou. "Implementation of direct current to direct current converter exploiting power amplifier." Annals of Electrical and Electronic Engineering 3, no. 3 (2020): 1–7. http://dx.doi.org/10.21833/aeee.2020.02.002.

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In the last years, RF power amplifiers are taking advantage of the switched dc-dc converters to use them in several architectures that may improve the efficiency of the amplifier, keeping good linearity. In this study a DC-DC power converter design suitable for high-frequency applications by using a class E power amplifier (Inverter), instead of using small battery values choosing Radio Frequency (RF) values and getting high efficiency of output voltage and a maximum of current and voltage values between 0-9 mW of power input in rectifier, the class E power amplifier designed by using GaN HEMT
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18

Hamadou, Aissatou. "Implementation of direct current to direct current converter exploiting power amplifier." Annals of Electrical and Electronic Engineering 3, no. 3 (2020): 1–7. http://dx.doi.org/10.21833/aeee.2020.03.001.

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In the last years, RF power amplifiers are taking advantage of the switched dc-dc converters to use them in several architectures that may improve the efficiency of the amplifier, keeping good linearity. In this study a DC-DC power converter design suitable for high-frequency applications by using a class E power amplifier (Inverter), instead of using small battery values choosing Radio Frequency (RF) values and getting high efficiency of output voltage and a maximum of current and voltage values between 0-9 mW of power input in rectifier, the class E power amplifier designed by using GaN HEMT
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19

Cancelli, Roberto, Gianfranco Avitabile, and Antonello Florio. "Designing and Optimizing a 2.4 GHz Complementary Metal–Oxide-Semiconductor Class-E Power Amplifier Combining Standard and High-Voltage Metal–Oxide-Semiconductor Field-Effect Transistors." Electronics 14, no. 6 (2025): 1135. https://doi.org/10.3390/electronics14061135.

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The advent of CMOS power amplifiers has enabled compact and cost-effective solutions for RF applications. Among the available options, switching amplifiers are the most competitive due to their superior efficiency. In this paper, we present the design of a fully integrated 130 nm CMOS class-E RF power amplifier optimized for 2.4 GHz ISM band operations that is compliant with the Bluetooth Low Energy (BLE) standard. The amplifier is based on a cascode configuration with charging acceleration capacitance and a combination of standard and high-voltage (HV) MOSFETs, ensuring optimal performance wh
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20

Choi, Hojong. "An Inverse Class-E Power Amplifier for Ultrasound Transducer." Sensors 23, no. 7 (2023): 3466. http://dx.doi.org/10.3390/s23073466.

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An inverse Class-E power amplifier was designed for an ultrasound transducer. The proposed inverse Class-E power amplifier can be useful because of the low series inductance values used in the output matching network that helps to reduce signal distortions. Therefore, a newly designed Class-E power amplifier can obtain a proper echo signal quality. The measured output voltage, voltage gain, voltage gain difference, and power efficiency were 50.1 V, 22.871 dB, 0.932 dB, and 55.342%, respectively. This low voltage difference and relatively high efficiency could verify the capability of the ultra
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21

R. Shankar et.al.,, R. Shankar et al ,. "A1GHz Class E Power Amplifier for Wireless Applications." International Journal of Electrical and Electronics Engineering Research 7, no. 4 (2017): 103–10. http://dx.doi.org/10.24247/ijeeeraug201711.

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22

Xu, Jiale, Zikang Tong, and Juan Rivas-Davila. "1 kW MHz Wideband Class E Power Amplifier." IEEE Open Journal of Power Electronics 3 (2022): 84–92. http://dx.doi.org/10.1109/ojpel.2022.3146835.

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23

Thian, Mury, Vincent Fusco, and Peter Gardner. "Power-Combining Class-E Amplifier With Finite Choke." IEEE Transactions on Circuits and Systems I: Regular Papers 58, no. 3 (2011): 451–57. http://dx.doi.org/10.1109/tcsi.2010.2072250.

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24

Singh, Gagan Deep, and Nagarjuna Nallam. "An RF Choke-Less Class E Power Amplifier." IEEE Transactions on Circuits and Systems II: Express Briefs 67, no. 11 (2020): 2422–26. http://dx.doi.org/10.1109/tcsii.2020.2966552.

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25

Mury, Thian, and Vincent F. Fusco. "Sensitivity Characteristics of Inverse Class-E Power Amplifier." IEEE Transactions on Circuits and Systems I: Regular Papers 54, no. 4 (2007): 768–78. http://dx.doi.org/10.1109/tcsi.2006.888763.

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26

Kazimierczuk, M. K., and W. A. Tabisz. "Class C-E high-efficiency tuned power amplifier." IEEE Transactions on Circuits and Systems 36, no. 3 (1989): 421–28. http://dx.doi.org/10.1109/31.17589.

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27

Lin, Chi-Hsien, and Hong-Yeh Chang. "A Broadband Injection-Locking Class-E Power Amplifier." IEEE Transactions on Microwave Theory and Techniques 60, no. 10 (2012): 3232–42. http://dx.doi.org/10.1109/tmtt.2012.2209456.

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28

Ms. Sweta Minj. "Design and Analysis of Class-E Power Amplifier for Wired & Wireless Systems." International Journal of New Practices in Management and Engineering 1, no. 04 (2012): 07–13. http://dx.doi.org/10.17762/ijnpme.v1i04.9.

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In this research article, an advanced class-E Power Amplifier (PA) working at center frequency 1842.5MHz with 75MHz bandwidth is proposed. The class E type power amplifier is premeditated and realized using 0.35µm CMOS technological file in ADS. The proposed class E power amplifier provides low return loss, Signal and Noise Ratio of 47.5dB, low noise figure of 1.434dB and PAE of 69.3%.
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29

Ortega-Gonzalez, Francisco Javier, David Tena-Ramos, Moises Patino-Gomez, Jose Manuel Pardo-Martin, and Diego Madueno-Pulido. "High-Power Wideband $L$-Band Suboptimum Class-E Power Amplifier." IEEE Transactions on Microwave Theory and Techniques 61, no. 10 (2013): 3712–20. http://dx.doi.org/10.1109/tmtt.2013.2279366.

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30

Horzhii, Oleksii, and Oleksandr Sianov. "THE RESEARCH OF CLASS E POWER AMPLIFIER MODEL WITH HIGH EFFICIENCY." Collection of scholarly papers of Dniprovsk State Technical University (Technical Sciences) 2, no. 45 (2024): 125–35. https://doi.org/10.31319/2519-2884.45.2024.14.

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The paper deals with the process of the design procedure and implementation of a modern switch-mode class E power amplifier model that theoretically could give up to 100 % efficiency due to minimizing the power dissipated during the transistor on-off transition, even if the switching time of it takes a significant fraction of the signal period. The primary purpose was designing an effective mathematical model, based on which it can be possible to obtain a practical model of class E amplifier with parameters corresponding with calculated. Mathematical calculations gave us results with an accura
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31

Nam, Sunwoo, Hansik Oh, Sooncheol Bae, Soohyun Bin, Yoonjung Lee, and Youngoo Yang. "Wireless Power Transfer System Using Class E/F3 Power Amplifier with Second Harmonic Reduction." Journal of Korean Institute of Electromagnetic Engineering and Science 34, no. 7 (2023): 514–24. http://dx.doi.org/10.5515/kjkiees.2023.34.7.514.

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32

nabil, soha. "A 3.1-10.6 GHz Hybrid Class-F Class-E Power Amplifier." Journal of Advanced Engineering Trends 43, no. 2 (2024): 1–9. http://dx.doi.org/10.21608/jaet.2022.147046.1213.

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33

Yahya, Salah I., Ban M. Alameri, Mohammad (Behdad) Jamshidi, et al. "A New Design Method for Class-E Power Amplifiers Using Artificial Intelligence Modeling for Wireless Power Transfer Applications." Electronics 11, no. 21 (2022): 3608. http://dx.doi.org/10.3390/electronics11213608.

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This paper presents a new approach to simplify the design of class-E power amplifier (PA) using hybrid artificial neural-optimization network modeling. The class-E PA is designed for wireless power transfer (WPT) applications to be used in biomedical or internet of things (IoT) devices. Artificial neural network (ANN) models are combined with optimization algorithms to support the design of the class-E PA. In several amplifier circuits, the closed form equations cannot be extracted. Hence, the complicated numerical calculations are needed to find the circuit elements values and then to design
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34

Sun, Yanzhou, Jianghua Yu, and Xiaoqian Liu. "Design of class-E power amplifier for capacitive power transfer system." Microelectronics Journal 80 (October 2018): 69–74. http://dx.doi.org/10.1016/j.mejo.2018.08.010.

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35

Wang, Yelin, Suan-Kien Foo, and Qibing He. "Derivation of Closed-Form Design Equations for Idealized Operation of Inverse Class-E Power Amplifiers at Any Duty Ratio." International Journal of Electronics and Telecommunications 61, no. 3 (2015): 281–87. http://dx.doi.org/10.1515/eletel-2015-0037.

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Abstract Complementary to the conventional class-E topology, inverse class-E operation has several advantages over the class-E counterpart, such as lower peak switch voltage and smaller circuit inductance, which are attractive to high power RF design and MMIC implementation. This paper derives the closed-form design equations that can be used to synthesize the idealized operation of inverse class-E power amplifiers at any switch duty ratio. Calculation of the key design parameters, such as the maximum switch voltage and circuit components values, is elaborated and compared with the case of con
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36

Kazimierczuk, M. K. "Class E tuned power amplifier with nonsinusoidal output voltage." IEEE Journal of Solid-State Circuits 21, no. 4 (1986): 575–81. http://dx.doi.org/10.1109/jssc.1986.1052574.

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37

Sowlati, T., Y. Greshishchev, C. Andre, and T. Salama. "1.8 GHz class E power amplifier for wireless communications." Electronics Letters 32, no. 20 (1996): 1846. http://dx.doi.org/10.1049/el:19961262.

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38

Sowlati, T., Y. M. Greshishchev, and C. A. T. Salama. "Phase-correcting feedback system for class E power amplifier." IEEE Journal of Solid-State Circuits 32, no. 4 (1997): 544–49. http://dx.doi.org/10.1109/4.563676.

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39

Islam, Syed S., and A. F. M. Anwar. "High frequency GaN/AlGaN HEMT class-E power amplifier." Solid-State Electronics 46, no. 10 (2002): 1621–25. http://dx.doi.org/10.1016/s0038-1101(02)00115-6.

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40

Li, Kwan-Wai, and Ka-Nang Leung. "A class-E power amplifier for wireless biomedical systems." Analog Integrated Circuits and Signal Processing 75, no. 3 (2013): 525–29. http://dx.doi.org/10.1007/s10470-013-0061-7.

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41

Mikolajewski, Miroslaw. "An Off-Nominal Class E Amplifier—Design Oriented Analysis." Electronics 12, no. 10 (2023): 2203. http://dx.doi.org/10.3390/electronics12102203.

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This paper analyses an off-nominal Class E ZVS amplifier, with an R.F. supply choke and the switch on-duty ratio D = 0.5, to identify conditions for its high-frequency and high-efficiency operation. Simple user-friendly analytical expressions for the essential parameters of the amplifier have been derived and subsequently validated by simulation and experimental results. It has been proven that the off-nominal amplifier can be optimized to outperform the nominal Class E amplifier with respect to crucial parameters such as, e.g., power efficiency or the operating frequency in some applications.
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42

Cao, Tao, Songbai He, and Fei You. "Performance study of an inverse class E power amplifier with series tunable parallel resonant tank." International Journal of Microwave and Wireless Technologies 3, no. 4 (2011): 405–13. http://dx.doi.org/10.1017/s1759078711000250.

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An analysis of operation of a modified inverse class E power amplifier is presented. The proposed amplifier that has a series tunable parallel resonant tank is similar to a hybrid of class F and inverse class E. The principles and design equations required to determine the optimum operation of the amplifier are analyzed in detail. The practical circuit using LDMOS MRF21010 is shown to be able to deliver 40.02 dBm outpout power at 155 MHz. The amplifier achieves power-added efficiency (PAE) of 78.18% and drain efficiency of 78.42%, and exhibits 25.02 dB power gain when operates from a 21 V supp
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43

Siri, Mattison S., and David S. Cochran. "Development of a Design Procedure for Class E Amplifiers." MATEC Web of Conferences 223 (2018): 01016. http://dx.doi.org/10.1051/matecconf/201822301016.

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Here, the step-by-step design procedure for a Class E amplifier is presented. An existing Class E amplifier system is described using a systems architecture approach. The design decomposition for the case study is written so that Physical Solutions (PSs; equivalent to Design Parameters) are in terms of component parameters (such as frequency or capacitance). Coupling issues are found to arise given constraints on transistor use. The design decomposition is altered to reflect the case where an amplifier is required to power a specific load. A discussion of transistor failure enables a design pr
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44

Yi, Yearin, and Jinho Jeong. "13.56 MHz High Efficiency Class E Power Amplifier with Low Drain Voltage." Journal of Korean Institute of Electromagnetic Engineering and Science 26, no. 6 (2015): 593–96. http://dx.doi.org/10.5515/kjkiees.2015.26.6.593.

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45

Wen, Feng, and Rui Li. "Parameter Analysis and Optimization of Class-E Power Amplifier Used in Wireless Power Transfer System." Energies 12, no. 17 (2019): 3240. http://dx.doi.org/10.3390/en12173240.

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In this paper, a steady-state matrix analysis method is introduced to analyze the output characteristics of the class-E power amplifier used in a wireless power transfer (WPT) system, which takes the inductance resistance, on-resistance and leakage current of metal-oxide-semiconductor field effect transistor (MOSFET) into account so that the results can be closer to the actual value. On this basis, the parameters of the class-E power amplifier are optimized, and the output power is improved under the premise of keeping the efficiency unchanged. Finally, the output characteristics of the amplif
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46

Qin, Wei, Yong Tao Li, Ying Jie Li, and Xiao Ping Xu. "High Efficiency 500W RF Generator." Advanced Materials Research 383-390 (November 2011): 1333–36. http://dx.doi.org/10.4028/www.scientific.net/amr.383-390.1333.

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In the previous literature about RF generator, Efficiency of output of RF generator can reach 60-70 percent. In this paper, a new 500W RF generator with high efficiency and high stability is designed and fabricated for plasma applications. The efficiency of a power amplifier in the RF generator is improved by using Class-E amplifier. The Class-E power amplifiers described here is based on a load network synthesized to have a transient response which maximizes power efficiency even if the active device switching times are substantial fractions of the AC cycle. For that circuit, the author measu
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47

Putro, Triswantoro, Arifan Dwiyanto, Dewi Anggraeni, and Setyawan P. Sakti. "Development of RF plasma generator based on Class E Power Amplifier." Journal of Physics: Conference Series 2780, no. 1 (2024): 012032. http://dx.doi.org/10.1088/1742-6596/2780/1/012032.

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Abstract The plasma produced at 2 MHz radio frequency has substantial energy release stability and can be used to modify a material’s surface. The objective of this research is to create a plasma generator operating at a radio frequency of 2 MHz and examine how voltage affects the plasma spectrum that is generated. An AD9833 frequency generator, a class E amplifier, and impedance matching are used in the design of a 2 MHz radio frequency plasma generator as power amplifiers to create plasma. Variations in voltage, gas, and gas flow have been used. The input voltage variations used were 10V and
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48

Ha-Van, Nam, and Chulhun Seo. "Design of high PAE class-E power amplifier for wireless power transmission." IEICE Electronics Express 11, no. 17 (2014): 20140682. http://dx.doi.org/10.1587/elex.11.20140682.

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49

Lim, Sunghun, Sooncheol Bae, Jaehyuk Choi, and Youngoo Yang. "6.78-MHz Class E Power Amplifier with Low Output Power Variation against the Load Impedance Variation." Journal of Korean Institute of Electromagnetic Engineering and Science 33, no. 8 (2022): 599–606. http://dx.doi.org/10.5515/kjkiees.2022.33.8.599.

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50

Ye, Jia Ni, Zachary Nosker, Kazuyuki Wakabayashi, et al. "Architecture of High-Efficiency Digitally-Controlled Class-E Power Amplifier." Key Engineering Materials 497 (December 2011): 273–84. http://dx.doi.org/10.4028/www.scientific.net/kem.497.273.

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This paper describes the analysis and design of digitally-controlled class-E power amplifiers, which are suitable for fine CMOS implementation. Two methods for implementing digitally-controlled class-E(-like) amplifiers have already been proposed: using NMOS switch arrays or digital PWM. In this paper we analyze the operation and efficiency of these methods, and then we propose combining them to achieve higher efficiency.
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