Academic literature on the topic 'CMOS image sensor module'

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Journal articles on the topic "CMOS image sensor module"

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Xu, Lei, and Wei Lu. "Research on Video Information Acquisition Module of OV7620." Advanced Materials Research 216 (March 2011): 29–33. http://dx.doi.org/10.4028/www.scientific.net/amr.216.29.

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In order to meet real-time and quick requirements for video information acquiring and processing, this paper introduces a hardware platform based on Altera's Cyclone series EP1C12Q240C8, to descript the driving timing for CMOS image sensor OV7620 with Verilog HDL language to acquire video information. The system uses SCCB programming model, establishes communication between FPGA chip and CMOS image sensor to achieve the control and acquisition of the signal. In order to achieve operational requirements in different environments and needs, the corresponding registers and the controller are set within CMOS image sensor. Experimental results show that the control of the CMOS image sensor OV7620 flexibly provides a stable and reliable source of raw information for video monitor, industrial applications such as on-site monitoring.
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Kim, Bioh, Thorsten Matthias, Gerald Kreindl, Viorel Dragoi, Markus Wimplinger, and Paul Lindner. "Advances in Wafer Level Processing and Integration for CIS Module Manufacturing." International Symposium on Microelectronics 2010, no. 1 (2010): 000378–84. http://dx.doi.org/10.4071/isom-2010-wa1-paper5.

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This article presents the advances in wafer-level processing and integration techniques for CMOS image sensor module manufacturing. CMOS image sensors gave birth to the low-cost, high-volume camera phone market and are being adopted for various high-end applications. The backside illumination technique has significant advantages over the front-side illumination due to separation of the optical path from the metal interconnects. Wafer bonding plays a key role in manufacturing backside illuminated sensors. The cost-effective integration of miniaturized cameras in various handheld devices becomes realized through the introduction of CMOS image sensor modules or camera modules manufactured with wafer-level processing and integration techniques. We developed various technologies enabling wafer-level processing and integration, such as (a) wafer-to-wafer permanent bonding with oxide or polymer layers for manufacturing backside illuminated sensor wafers, (b) wafer-level lens molding and stacking based on UV imprint lithography for making wafer-level optics, (c) conformal coating of various photoresists within high aspect ratio through-silicon vias, and (d) advanced backside lithography for various metallization processes in wafer-level packaging. Those techniques pave the way to the future growth of the digital imaging industry by improving the electrical and optical aspects of devices as well as the module manufacturability.
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Okada, Kei, Takeshi Morishita, Marika Hayashi, Masayuki Inaba, and Hirochika Inoue. "Design and Development of a Small Stereovision Sensor Module for Small Self-Contained Autonomous Robots." Journal of Robotics and Mechatronics 17, no. 3 (2005): 248–54. http://dx.doi.org/10.20965/jrm.2005.p0248.

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We designed a small stereovision (SSV) sensor module for easily adding visual functions to a small robot and enabling their use. The SSV sensor module concept includes 1) a vision sensor module containing a camera and a visual processor and 2) connecting to a robot system through general-purpose interface. This design enables the use of visual functions as ordinary sensors such, as touch or ultra-sonic sensors, by simply connecting a general-purpose interface port such as an IO port or serial connector. We developed a prototype module with small CMOS image sensors for a mobile phone and a 16 bit microprocessor. The 30×40mm prototype is small enough to attach even to palm-top robots. Our module demonstrates image processing including binarization, color extraction and labeling, and template matching. We developed self-contained robots, including a 2DOF head robot, a humanoid robot, and a palm-top robot, and realized vision-based autonomous behavior.
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Chungyong, Kim, and Kim Gyu-Sik. "Analog CMOS Image Sensor based Radon Counter." International Journal of Trend in Scientific Research and Development 2, no. 2 (2018): 54–59. https://doi.org/10.31142/ijtsrd8330.

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Radon is an invisible, odorless, and chemically inactive radioactive gas produced by the decay of uranium ore. Various types of equipment and components have been proposed for use in effective radon detection. In this paper, we describe a radon detector that uses an analog CMOS image sensor module. Based on our studies, we believe that this system would be helpful in protecting many people from the dangers associated with radon exposure. Chungyong Kim | Gyu-Sik Kim "Analog CMOS Image Sensor-based Radon Counter" Published in International Journal of Trend in Scientific Research and Development (ijtsrd), ISSN: 2456-6470, Volume-2 | Issue-2 , February 2018, URL: https://www.ijtsrd.com/papers/ijtsrd8330.pdf
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Katayan, Riyas, Shwe Sin Win, Rui Qi Lim, and Kripesh Vaidyanathan. "Wireless Imaging Module Assembly and Integration for Capsule Endoscopic Applications." Advanced Materials Research 254 (May 2011): 62–65. http://dx.doi.org/10.4028/www.scientific.net/amr.254.62.

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Various breakthroughs have being made recently in Capsule endoscopy (CE). As the technology gets more matured with more clinical acceptance rate, it’s time to explore the best way for fabricating, packaging and integrating the CE. This paper will present the development of a compact high resolution image module with a VGA CMOS sensor and in house RF-Baseband IC chip for capsule endoscopic applications. The complete module, inclusive of lens, measures 11.5 mm in diameter by 28 mm in length have being able to design, fabricate and assemble. 640x260 CMOS sensor, 0201 capacitors, resistors and LEDs, are assembled onto a rigid-flex PCB with processes such as reflow heating and auto highly accurate pick and place die placement. The optical imaging module is interfaced with a RF communication unit, consisting of a base-band IC and antenna, to enable wireless transmission of dynamic image data to an external data processing and visualization unit. Animal trials produces ex-vivo GI tissue images of superior quality in terms of color saturation, contrast and resolution compared with currently available commercial capsule imaging devices.
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Park, Min-Chul, Kyung-Joo Cheoi, and Takayuki Hamamoto. "A CMOS Digital Image Sensor with a Feature-Driven Attention Module." KIPS Transactions:PartB 15B, no. 3 (2008): 189–96. http://dx.doi.org/10.3745/kipstb.2008.15-b.3.189.

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Xia, Peng, Wei Dong Hao, and Xiao Yu. "Robot System to Detect Line Based on ARM9." Applied Mechanics and Materials 16-19 (October 2009): 905–9. http://dx.doi.org/10.4028/www.scientific.net/amm.16-19.905.

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In this paper, a new system of visual detect line robot based on CMOS image sensor was designed. Meanwhile a new technology to detect line was proposed and designed. The system includes nuclear module, image collecting module, robot orientation module, electromotor drive module, man-computer interaction module and power supply module. The principle, function and implementation of every module were introduced in detail. Results of experiments show that the system has not only strong real-time capability and high accuracy, but also outstanding stabilization.
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Becker, Gabor Szedo, and Róbert Lovas. "Uniformity Correction of CMOS Image Sensor Modules for Machine Vision Cameras." Sensors 22, no. 24 (2022): 9733. http://dx.doi.org/10.3390/s22249733.

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Flat-field correction (FFC) is commonly used in image signal processing (ISP) to improve the uniformity of image sensor pixels. Image sensor nonuniformity and lens system characteristics have been known to be temperature-dependent. Some machine vision applications, such as visual odometry and single-pixel airborne object tracking, are extremely sensitive to pixel-to-pixel sensitivity variations. Numerous cameras, especially in the fields of infrared imaging and staring cameras, use multiple calibration images to correct for nonuniformities. This paper characterizes the temperature and analog gain dependence of the dark signal nonuniformity (DSNU) and photoresponse nonuniformity (PRNU) of two contemporary global shutter CMOS image sensors for machine vision applications. An optimized hardware architecture is proposed to compensate for nonuniformities, with optional parametric lens shading correction (LSC). Three different performance configurations are outlined for different application areas, costs, and power requirements. For most commercial applications, the correction of LSC suffices. For both DSNU and PRNU, compensation with one or multiple calibration images, captured at different gain and temperature settings are considered. For more demanding applications, the effectiveness, external memory bandwidth, power consumption, implementation, and calibration complexity, as well as the camera manufacturability of different nonuniformity correction approaches were compared.
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Chambion, Bertrand, G. Moulin, S. Caplet, et al. "Curved CMOS Image Sensors: Packaging Issues, Applications and Roadmaps." Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2017, DPC (2017): 1–33. http://dx.doi.org/10.4071/2017dpc-tp3_presentation1.

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Since few years, there has been an increasing interest and demand in flexible electronics. Standard imaging system consists of an optical module (set of lenses) and an image sensor. For wide field of view applications, and due to the curved shape of lenses and mirrors, the flat image after being propagated through the optical system is not flat but curved, i.e. the off-axis light focuses in a curved manner. This problem is called Petzval Field Curvature Aberration (Petzval FCA). It is generally fixed by additional complex lenses to “flatten” the image plane. We propose another approach with a hemispherical curved sensor technology. It allows eliminating FCA directly at the sensor level and thus makes it possible to drastically simplify, and hence miniaturize, the optical system architecture. First, a brief state of the art on curved detectors will be detailed for different application fields. Bendable capacities of hydrid detectors (included interconnection layer) were fully investigated and tested in the past [1, 2]. Moreover, a hemi-spherically curved visible image sensor with better optical characteristics (image quality) was realized and patented by Sony Company in 2014 [3]. Recently, a tunable curving packaging technology, with new optical functions possibilities has been presented in Electronic Component and Technology Conference 2016 [4]. Then, CEA-LETI curving technologies will be explained to address fixed and tunable curvature packaging applications, included modeling and technical process steps. Characterization of curved sensors prototypes have been performed to understand mechanical and electro-optical bending limits and will be also presented in the paper. Based on an existing fisheye flat sensor optical design, a curved focal plane will be described, showing that it's possible to simplify the standard system from 14 lenses (11 types of optical glass) with 2 aspheric lenses, to only 9 lenses (−35%), 3 types of optical glasses, without aspheric surfaces. The benefits of a curved sensor will be summarized into two categories: those related to the optical system design and those related to the quality of images produced by a camera with curved sensor. Optical system:» Miniaturization of optical devices (volume, weight);» Simplification of the lenses alignment process (due to reduced number of lenses);» Suppression of aspheric lenses;» Wide field of view enhancement. Image quality:» More homogeneous image quality (reduced image noise);» Similar or improved resolution and higher sensitivity;» Corrected distortion occurring along the image edges. Finally, curved CMOS image sensor roadmaps and perspectives will be discussed: from a market point of view, application field surveys have been done on mass market applications (mobile, consumer…), photography, automotive… From a technical aspect, a curving technologies roadmap will be proposed, leaded by applications needs, on single chip, collective, and wafer level processes.
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Yamawaki, Akira, and Serikawa Seiichi. "A Wearable Supporting System for Visually Impaired People in Operating Capacitive Touchscreen." Applied Mechanics and Materials 103 (September 2011): 687–94. http://dx.doi.org/10.4028/www.scientific.net/amm.103.687.

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We propose a wearable supporting system with a CMOS image sensor for the visually impaired people in operating capacitive touchscreen. This system attaches the CMOS image sensor without a lens to the tip of the middle finger. The icons and buttons displayed on the touchscreen are replaced to the color barcodes. Touching the surface of the touchscreen with the CMOS image sensor directly, the color barcode is detected and decoded. The decoded results are returned to the user by some interaction like audio. Then, the user touches the button area around the color barcode by the forefinger to operate the target device. This system can provide very easy and natural way for operating the touchscreen to the visually impaired people who usually recognize the materials by the finger. Any mechanical modification of the target device is not needed. The modification can be made by changing its software program. Since the color barcode is sensed by the image sensor without any lens touching the surface of the touchscreen, each bar in the color barcode should be blurred. So, we develop an easy and simple image processing to handle such problem. We design it as the hardware module to achieve the high performance and low-power wearable device. A prototype hardware using an FPGA shows the hardware size, the performance and the actual demonstration.
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Dissertations / Theses on the topic "CMOS image sensor module"

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Wodnicki, Robert. "A CMOS foveated image sensor." Thesis, McGill University, 1996. http://digitool.Library.McGill.CA:80/R/?func=dbin-jump-full&object_id=23759.

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The foveated or log-polar mapping is a biologically motivated image transformation with the potential for realizing efficient real-time vision sensors. By using space-variant sampling, the foveation process compresses the data in the perceived scene, thereby producing a significant reduction in subsequent image processing computations. These savings make foveated image sensors attractive for use on autonomous mobile robots with limited available computing power. When fabricated in standard Complimentary Metal Oxide Semiconductor (CMOS) technology, foveated sensors benefit from the integration of image sensing and processing functions on one substrate, yielding a further reduction in power consumption and system mass. In this thesis, the design, implementation and test of a CMOS foveated image sensor are examined in detail. A new representation of the foveated mapping, called the hybrid model, is introduced to facilitate design of the sensor using a standard CMOS process. The imager is based on the archetypal CMOS Passive Pixel Sensor (PPS). A study of this technology is undertaken, including an investigation of some non-ideal effects. A detailed explanation of the design of the prototype CMOS foveated sensor is presented. Issues related to the use of a standard CMOS process are examined, and the development of a software tool for automatic layout generation explained. The theoretical discussion is followed by a presentation of a comprehensive analysis of the fabricated prototype. With the help of experimental results, including sample images, noise performance, maximum frame rate and power consumption, the merits of the fabricated prototype are demonstrated, and its potential for use as a mobile robot vision sensor investigated.
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Benyhesan, Mohammad Kassim. "Current-mode CMOS hybrid image sensor." Thesis, University of Missouri - Kansas City, 2013. http://pqdtopen.proquest.com/#viewpdf?dispub=1540634.

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<p> Digital imaging is growing rapidly making Complimentary Metal-Oxide-Semi conductor (CMOS) image sensor-based cameras indispensable in many modern life devices like cell phones, surveillance devices, personal computers, and tablets. For various purposes wireless portable image systems are widely deployed in many indoor and outdoor places such as hospitals, urban areas, streets, highways, forests, mountains, and towers. However, the increased demand on high-resolution image sensors and improved processing features is expected to increase the power consumption of the CMOS sensor-based camera systems. Increased power consumption translates into a reduced battery life-time. The increased power consumption might not be a problem if there is access to a nearby charging station. On the other hand, the problem arises if the image sensor is located in widely spread areas, unfavorable to human intervention, and difficult to reach. Given the limitation of energy sources available for wireless CMOS image sensor, an energy harvesting technique presents a viable solution to extend the sensor life-time. Energy can be harvested from the sun light or the artificial light surrounding the sensor itself. </p><p> In this thesis, we propose a current-mode CMOS hybrid image sensor capable of energy harvesting and image capture. The proposed sensor is based on a hybrid pixel that can be programmed to perform the task of an image sensor and the task of a solar cell to harvest energy. The basic idea is to design a pixel that can be configured to exploit its internal photodiode to perform two functions: image sensing and energy harvesting. As a proof of concept a 40 &times; 40 array of hybrid pixels has been designed and fabricated in a standard 0.5 <i>&micro;m</i> CMOS process. Measurement results show that up to 39 <i>&micro;W</i> of power can be harvested from the array under 130 Klux condition with an energy efficiency of 220 nJ /pixel /frame. The proposed image sensor is a current-mode image sensor which has several advantages over the voltage-mode. The most important advantages of using current-mode technique are: reduced power consumption of the chip, ease of arithmetic operations implementation, simplification of the circuit design and hence reduced layout complexity.</p>
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Cheng, Hsiu-Yu. "Wide dynamic range CMOS image sensor." Thesis, University of Oxford, 2009. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.547452.

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Das, Dipayan. "Wide dynamic range CMOS image sensor." Thesis, University of Oxford, 2011. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.572608.

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• Abstract Integrated digital imaging systems are widely used in consumer electronics today. Current digital image sensors have a linear respeiiSt. The limited dynamic range of linear digital image sensors results in saturation when the input dynamic range of the scene is larger than that of the camera. This limitation could be overcome using pixels with an output that is proportional to the logarithm of the detected photocurrent. Conventional CMOS pixels with a logarithmic response, using a transistor operating in the sub-threshold region, are capable of capturing wide dynamic range scenes with more than six decades of illumination intensity. But these pixels suffer from fixed pattern noise, slow response and low sensitivity. A five transistor (5T) pixel circuit for a standard 0.35-fLm CMOS process which integrates the photocurrent linearly and capable of a logarithmic response is described in the thesis. A key component of the 5T pixel is a time-dependent reference voltage. This voltage is applied to the gate of one of the transistors inside each pixel in the array for the duration of the exposure to generate a logarithmic response. A model derived to generate the reference voltage is described. Improvements were made to the reference voltage model to take into consideration the non-ideal effects such as charge feedthrough and threshold voltage variations. A potential problem associated with successfully tonemapping low photo currents with the 5T pixel has been described and a method to calculate the optimal value of reference current Iret proposed. This was shown to lead to an optimum photoresponse. Measurement results from fabricated 1-D and 2-D arrays of 5T pixels are presented and analysed. An overall DR of 97-dB (almost 5 decades) has been achieved from 100 mlux to 6.7 Klux. The slope of the logarithmic photoresponse was shown to be adjustable and controlled by the slope parameter S in the reference voltage model. A large output swing of over 1 V due to the large photoresponse slope in the logarithmic region results in greater signal-to-noise ratio compared to the conventional logarithmic pixel based on the subthreshold transistor operation (60 m V/decade). Digital and analogue reference voltage generating techniques are described with circuits implemented in 0.35-fLm CM OS process. Finally, a 5T NMOS pixel that is capable of WDR imaging with superior low-light performance (23 mlux) and greater DR (1l0-dB) than the 5T PMOS pixel is described. [ a
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Guo, Xiaochuan. "A time-base asynchronous readout cmos image sensor." [Gainesville, Fla.] : University of Florida, 2002. http://purl.fcla.edu/fcla/etd/UFE0000540.

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Pattnaik, Abhijeet. "DESIGN OF A CMOS BASED IMAGE SENSOR USING COMPRESSIVE IMAGE SENSING." OpenSIUC, 2021. https://opensiuc.lib.siu.edu/theses/2868.

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This work optimizes a CMOS image pixel sensor circuit for being used in a compressive sensing (CS) image sensor. The CS image sensor sums neighbor pixel outputs and hence reduces analog to digital conversions. Efforts are also made to improve the circuit that performs such pixel summation. With the optimized design, a CMOS image sensor circuit with a compression ratio of 4 is designed using a 130 nm CMOS technology from Global foundries. The design pixel sensor has a 256X256 pixel array. Simulation shows that the developed image sensors can achieve peak signal to noise ratio (PSNR) of 28 dB and 37.8 dB for benchmark images Cameraman and Lenna, respectively.
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Saffih, Fayçal. "Foveated Sampling Architectures for CMOS Image Sensors." Thesis, University of Waterloo, 2005. http://hdl.handle.net/10012/820.

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Electronic imaging technologies are faced with the challenge of power consumption when transmitting large amounts of image data from the acquisition imager to the display or processing devices. This is especially a concern for portable applications, and becomes more prominent in increasingly high-resolution, high-frame rate imagers. Therefore, new sampling techniques are needed to minimize transmitted data, while maximizing the conveyed image information. <br /><br /> From this point of view, two approaches have been proposed and implemented in this thesis: <ol> <li> A system-level approach, in which the classical 1D row sampling CMOS imager is modified to a 2D ring sampling pyramidal architecture, using the same standard three transistor (3T) active pixel sensor (APS). </li> <li> A device-level approach, in which the classical orthogonal architecture has been preserved while altering the APS device structure, to design an expandable multiresolution image sensor. </li> </ol> A new scanning scheme has been suggested for the pyramidal image sensor, resulting in an intrascene foveated dynamic range (FDR) similar in profile to that of the human eye. In this scheme, the inner rings of the imager have a higher dynamic range than the outer rings. The pyramidal imager transmits the sampled image through 8 parallel output channels, allowing higher frame rates. The human eye is known to have less sensitivity to oblique contrast. Using this fact on the typical oblique distribution of fixed pattern noise, we demonstrate lower perception of this noise than the orthogonal FPN distribution of classical CMOS imagers. <br /><br /> The multiresolution image sensor principle is based on averaging regions of low interest from frame-sampled image kernels. One pixel is read from each kernel while keeping pixels in the region of interest at their high resolution. This significantly reduces the transferred data and increases the frame rate. Such architecture allows for programmability and expandability of multiresolution imaging applications.
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Wang, Ching-Chun 1969. "A study of CMOS technologies for image sensor applications." Thesis, Massachusetts Institute of Technology, 2001. http://hdl.handle.net/1721.1/8214.

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Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2001.<br>Includes bibliographical references (p. 179-183).<br>CMOS (Complementary Metal-Oxide-Silicon) imager technology, as compared with mature CCD (Charge-Coupled Device) imager technology, has the advantages of higher circuit integration, lower power consumption, and potentially lower price. The advantages make this technology competent for the next-generation solid-state imaging applications. However, CMOS processes are originally developed for high-performance digital circuits. Fabricating high-quality embedded image sensors with CMOS technologies is not a straightforward task. This motivates the study of CMOS technologies for imaging applications presented in this thesis. The major content of this study can be partitioned into four parts: (a) A two-stage characterization methodology is developed for sensor optimization, including the characterization of large-area photodiodes and comparative analyses on small-dimension sensor arrays with various pixel structures, junction types of the sensors, and other process-related conditions. (b) The mechanism of hot-carrier induced excess minority carriers occurred at the in-pixel transistors is identified and investigated. The influence of the excess carriers on imager performance is analyzed. Suggestions on the pixel design are provided. (c) Signal cross-talk between adjacent pixels is quantified and studied using a sensor array with a specially designed metal shield pattern, which exposes the center pixel and covers the others. The influence of cross-talk on color imager performance is analyzed. Process and layout improvements on cross-talk are also proposed. (d) The trend of pixel size reduction is investigated from the perspective of the achievable optical lens resolution. Using the modulation transfer function (MTF) as an index, optical simulations are performed to examine the relation between the lens resolution and the lens complexity.<br>by Ching-Chun Wang.<br>Ph.D.
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Pour, Golsa Moayeri. "A Hybrid CMOS Image Sensor with Energy Harvesting Capability." Thesis, Purdue University, 2015. http://pqdtopen.proquest.com/#viewpdf?dispub=3734524.

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<p> During the past decades fast progress in CMOS fabrication technology has driven the miniaturization of electronic circuits. Every 2 to 3 years a new technology node has been introduced that reduced the sizes of all features in a circuit by 0.7, resulting in a reduction of the circuit area by half. This scaling has resulted in huge cost reduction for electronic circuits, reduced power consumption and increased circuit speed. The rapid cost and area reduction has stimulated new applications for CMOS circuits and the integration of more functionality on the same die. In recent years self-powered electronic circuits are investigated by integrating energy harvesting devices into electronic circuits such as for example solar cells. Such self powered electronic circuits are of interest for autonomous sensor applications.</p><p> In this thesis a 64 x 64 CMOS pixel analyzed array with solar energy harvesting functionality has been designed, simulated and fabricated. The substrate-well photodiodes within each pixel are used for light sensing and as solar cells. For such a hybrid pixel design the traditional active pixel design was modified in order to be able to bias the fundamental pn-junctions as required by the momentary operation mode. In order to be able to charge a battery, the voltage produced by the pn-junctions in energy harvesting mode had to be boosted up. For this purpose a DC-DC power converter was implemented into the circuit. Low-power design techniques were used in the circuit design phase using Cadence software for the design and simulation. The final pixel array was fabricated in a 0.5 &mu;m CMOS process.</p><p> A printed circuit board hosting an FPGA and supporting circuitry was designed and fabricated to test the fabricated CMOS microchip. A system-level model was also developed to gain a deeper insight into the trade off between energy harvesting and frame rate. It was found out that, under sunny outdoor condition, the energy harvesting pixel array can power itself up if the frame rate is reduced to 0.5 frames/s.</p>
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Chen, Shoushun. "Time domain CMOS image sensor : from photodetection to on-chip image processing /." View abstract or full-text, 2007. http://library.ust.hk/cgi/db/thesis.pl?ECED%202007%20CHEN.

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Books on the topic "CMOS image sensor module"

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Gakkai, Eizō Jōhō Media, ed. CMOS imēji sensa: CMOS image sensor. Koronasha, 2012.

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Sarkar, Mukul, and Albert Theuwissen. A Biologically Inspired CMOS Image Sensor. Springer Berlin Heidelberg, 2013. http://dx.doi.org/10.1007/978-3-642-34901-0.

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Sarkar, Mukul, and Albert Theuwissen. Biologically Inspired CMOS Image Sensor. Springer London, Limited, 2012.

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Sarkar, Mukul, and Albert Theuwissen. A Biologically Inspired CMOS Image Sensor. Springer, 2012.

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Sarkar, Mukul, and Albert Theuwissen. A Biologically Inspired CMOS Image Sensor. Springer, 2015.

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Sarkar, Mukul, and Albert Theuwissen. A Biologically Inspired CMOS Image Sensor. Springer, 2012.

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Xin, Qi. A time-to-first-spike CMOS image sensor. 2004.

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Olyaei, Ashkan. VIPRO: Focal-plane CMOS spatially-oversampling computational image sensor. 2006.

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Olyaei, Ashkan. ViPro: Focal-plane CMOS spatially-oversampling computational image sensor. 2006.

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Report on technical guidance for the development of a solid state image sensor for human low vision image warping. National Aeronautics and Space Administration, 1994.

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Book chapters on the topic "CMOS image sensor module"

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Li, Simon, and Yue Fu. "CMOS Image Sensor." In 3D TCAD Simulation for Semiconductor Processes, Devices and Optoelectronics. Springer New York, 2011. http://dx.doi.org/10.1007/978-1-4614-0481-1_9.

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Theuwissen, Albert. "CMOS Image Sensors." In Smart Sensor Systems. John Wiley & Sons, Ltd, 2014. http://dx.doi.org/10.1002/9781118701508.ch7.

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Tejas, R., Pavan Macherla, and N. Shylashree. "Image Sensor—CCD and CMOS." In Lecture Notes in Electrical Engineering. Springer Nature Singapore, 2022. http://dx.doi.org/10.1007/978-981-19-1906-0_40.

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Sarkar, Mukul, and Albert Theuwissen. "Navigation Using CMOS Polarization Sensor." In A Biologically Inspired CMOS Image Sensor. Springer Berlin Heidelberg, 2013. http://dx.doi.org/10.1007/978-3-642-34901-0_6.

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Park, JongHo. "CMOS Image Sensor for Smart Cameras." In KAIST Research Series. Springer Netherlands, 2015. http://dx.doi.org/10.1007/978-94-017-9987-4_1.

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Sarkar, Mukul, and Albert Theuwissen. "Design of a CMOS Image Sensor." In A Biologically Inspired CMOS Image Sensor. Springer Berlin Heidelberg, 2013. http://dx.doi.org/10.1007/978-3-642-34901-0_3.

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Sarkar, Mukul, and Albert Theuwissen. "Design of a CMOS Polarization Sensor." In A Biologically Inspired CMOS Image Sensor. Springer Berlin Heidelberg, 2013. http://dx.doi.org/10.1007/978-3-642-34901-0_4.

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Sarkar, Mukul, and Albert Theuwissen. "Material Classification Using CMOS Polarization Sensor." In A Biologically Inspired CMOS Image Sensor. Springer Berlin Heidelberg, 2013. http://dx.doi.org/10.1007/978-3-642-34901-0_5.

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Patel, Dhvani R., Brijesh N. Shah, and Karan Jasani. "CMOS Image Sensor Parameter Configuration Using LabVIEW." In Proceedings of the International Conference on Intelligent Systems and Signal Processing. Springer Singapore, 2018. http://dx.doi.org/10.1007/978-981-10-6977-2_9.

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Sarkar, Mukul, and Albert Theuwissen. "Introduction." In A Biologically Inspired CMOS Image Sensor. Springer Berlin Heidelberg, 2013. http://dx.doi.org/10.1007/978-3-642-34901-0_1.

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Conference papers on the topic "CMOS image sensor module"

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Weppe, Olivier, Jérôme Chossat, Thibaut Marty, Jean-Christophe Prévotet, and Maxime Pelcat. "Streamlined Models of CMOS Image Sensors Carbon Impacts." In 2024 27th Euromicro Conference on Digital System Design (DSD). IEEE, 2024. http://dx.doi.org/10.1109/dsd64264.2024.00041.

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Han, Changzhong, Ningmei Yu, Nan Lv, Hejiu Zhang, Mingxin Wu, and Miaomiao Cao. "Blurred Image Restoration CMOS Image Sensor Circuit Design." In 2024 9th International Conference on Integrated Circuits and Microsystems (ICICM). IEEE, 2024. https://doi.org/10.1109/icicm63644.2024.10814316.

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Xu, Shou-long, and Shu-liang Zou. "Video Monitoring System Availability in Radiation Accident Condition." In 2016 24th International Conference on Nuclear Engineering. American Society of Mechanical Engineers, 2016. http://dx.doi.org/10.1115/icone24-60848.

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Study of availability in radiation environment is presented for video monitoring system. Testing experiment has been completed by seven kinds of Image sensor module which includes three kinds of digital image sensor module and four kinds of analog image sensor module. Radiation accident condition was simulated by γ-ray ionizing radiation environment where the dose rate at 16.63Gy/h 20.20Gy/h and 58.30Gy/h. Availability has been studied by analyzing real time monitoring image quality parameters captured in γ-ray exposure environment. The primary image quality parameters include average gray level of the dark image and synthetic brightness of the color image. The most suitable image sensor module has been selected by image quality parameters for comparison before and after irradiation. Experimental results show that, digital camera has minimum background noise. The radiation resistance of CMOS image sensors is better than CCD image sensors. Therefore, digital video monitoring system with CMOS image sensor has the best image quality parameters and slightest effect in γ-ray ionizing radiation environment where the dose rate is less than 58.30Gy/h. Meanwhile, adequate light could reduce noise interference reduced by γ-ray for all types of video monitoring system. However, digital signal processing integrated circuit board has been destroyed when the accumulated dose reach to 88.40Gy, but the CMOS image sensor integrated circuit board has normal working parameters. As a conclusion, digital video monitoring system with CMOS image sensor could be used for real-time monitoring in radiation accident condition, but the digital signal processing integrated circuit board needs to be hardened by radiation hardened technology.
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Huang, Mark, Huisheng Han, Huabin Wu, Chuangwen Huang, and Weiqing Zhang. "Development on Super-thin & High-Pixel CMOS Image Sensor Module." In 2018 19th International Conference on Electronic Packaging Technology (ICEPT). IEEE, 2018. http://dx.doi.org/10.1109/icept.2018.8480525.

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Park, Hye Yeon, Sang-In Bae, Yunki Lee, et al. "New module and sensor optic design to reduce petal flare in CMOS image sensor." In 2023 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 2023. http://dx.doi.org/10.7567/ssdm.2023.f-4-02.

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Lopes, Tiago M. de F., Victor R. R. de Oliveira, Fernanda D. V. R. Oliveira, and Jose Gabriel R. C. Gomes. "Event-Based CMOS Image Sensor with Shared DVS Module for Pixel Area Reduction." In 2020 33rd Symposium on Integrated Circuits and Systems Design (SBCCI). IEEE, 2020. http://dx.doi.org/10.1109/sbcci50935.2020.9189911.

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Onodera, Yukito, Daisuke Hisano, Kazuki Maruta, and Yu Nakayama. "First Demonstration of 512-Color Shift Keying Signal Demodulation Using Neural Equalization for Optical Camera Communication." In Optical Fiber Communication Conference. Optica Publishing Group, 2023. http://dx.doi.org/10.1364/ofc.2023.th3h.7.

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This paper experimentally demonstrates 512 color shift keying (CSK) signal transmission for optical camera communication (OCC). We achieved error-free operation with a CMOS image sensor module and a multi-label classification neural network-based equalizer.
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Rentschler, Mark E., Ben S. Terry, and Austin D. Ruppert. "A Laparoscopic Camera-Enabled Cannula Port." In ASME 2009 Summer Bioengineering Conference. American Society of Mechanical Engineers, 2009. http://dx.doi.org/10.1115/sbc2009-204598.

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This project is exploring a potential new approach in providing visual feedback during minimally invasive surgery (MIS) that involves integrating a CMOS camera imager and lens into a traditional cannula entry port. Initial research has focused on developing this device for abdominal surgery (laparoscopy). Such a device can provide vision assistance without positioning and orientation constraints associated with current laparoscopes. Patients who undergo laparoscopic surgery experience less pain, shorter hospital stays, and a more rapid return to normal activities compared to patients who undergo conventional surgery. The benefits of laparoscopic surgery, however, are generally restricted to patients undergoing less complex procedures. The primary reason for limited application of laparoscopy to more complex procedures is two-fold. The first drawback is the limitation of the laparoscope to view all aspects of the abdominal cavity including looking back towards the entry site. Secondly, to view the video image from the scope the surgeon must turn focus away from the patient and towards a recorded video image on a monitor placed away from the patient. These constraints impose severe perception and orientation limitations that degrade surgical task performance. The long-term goal of this project is to develop a camera and sensor module that can be placed within traditional trocar ports for insertion, and that deploy outward from the cannula port after insertion. This approach will allow these ports to still be utilized by all traditional laparoscopic surgical tools, while potentially removing the need for the laparoscope. In addition, a small LCD display is placed at the port’s proximal end restore natural perception and orientation for the surgical team.
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Lareou, A., J. Dillon, and G. Martini. "Advanced Reconnaissance Image Sensor Module." In 31st Annual Technical Symposium, edited by Paul A. Henkel, Francis R. LaGesse, and Wayne W. Schurter. SPIE, 1988. http://dx.doi.org/10.1117/12.942271.

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Saffih, Faycal. "Multi-resolution CMOS image sensor." In Opto-Canada: SPIE Regional Meeting on Optoelectronics, Photonics, and Imaging, edited by John C. Armitage. SPIE, 2017. http://dx.doi.org/10.1117/12.2283948.

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