Academic literature on the topic 'CMOS integrated circuits'

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Journal articles on the topic "CMOS integrated circuits"

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Xu, Haoran, Jianghua Ding, and Jian Dang. "Design and Characteristics of CMOS Inverter based on Multisim and Cadence." Journal of Physics: Conference Series 2108, no. 1 (2021): 012034. http://dx.doi.org/10.1088/1742-6596/2108/1/012034.

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Abstract Known as complementary symmetrical metal oxide semiconductor (cos-mos), complementary metal oxide semiconductor is a metal oxide semiconductor field effect transistor (MOSFET) manufacturing process, which uses complementary and symmetrical pairs of p-type and n-type MOSFETs to realize logic functions. CMOS technology is used to build integrated circuit (IC) chips, including microprocessors, microcontrollers, memory chips (including CMOS BIOS) and other digital logic circuits. CMOS technology is also used in analog circuits, such as image sensors (CMOS sensors), data converters, RF cir
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Kazior, Thomas E. "Beyond CMOS: heterogeneous integration of III–V devices, RF MEMS and other dissimilar materials/devices with Si CMOS to create intelligent microsystems." Philosophical Transactions of the Royal Society A: Mathematical, Physical and Engineering Sciences 372, no. 2012 (2014): 20130105. http://dx.doi.org/10.1098/rsta.2013.0105.

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Advances in silicon technology continue to revolutionize micro-/nano-electronics. However, Si cannot do everything, and devices/components based on other materials systems are required. What is the best way to integrate these dissimilar materials and to enhance the capabilities of Si, thereby continuing the micro-/nano-electronics revolution? In this paper, I review different approaches to heterogeneously integrate dissimilar materials with Si complementary metal oxide semiconductor (CMOS) technology. In particular, I summarize results on the successful integration of III–V electronic devices
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Guang, Yang, Bin Yu, and Huang Hai. "Design of a High Performance CMOS Bandgap Voltage Reference." Advanced Materials Research 981 (July 2014): 90–93. http://dx.doi.org/10.4028/www.scientific.net/amr.981.90.

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Bandgap voltage reference, to provide a temperature and power supply insensitive output voltage, is a very important module in the analog integrated circuits and mixed-signal integrated circuits. In this paper, a high performance CMOS bandgap with low-power consumption has been designed. It can get the PTAT (Proportional to absolute temperature) current, and then get the reference voltage. Based on 0.35μm CMOS process, using HSPICE 2008 software for circuit simulation, the results showed that , when the temperature changes from -40 to 80 °C, the proposed circuit’s reference voltage achieve to
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Patel, Ambresh, and Ritesh Sadiwala. "Performance Analysis of Various Complementary Metaloxide Semiconductor Logics for High Speed Very Large Scale Integration Circuits." SAMRIDDHI : A Journal of Physical Sciences, Engineering and Technology 15, no. 01 (2023): 91–95. http://dx.doi.org/10.18090/10.18090/samriddhi.v15i01.13.

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The demand for VLSI low voltage high-performance low power systems are increasing significantly. Today's deviceapplications necessitate a system that consumes little power and conserves performance. Recent battery-powered lowvoltagedevices optimize power and high-speed constraints. Aside from that, there is a design constraint with burst-modetype integrated circuits for small devices to scale down. Low voltage low power static CMOS logic integrated circuitsoperate at a slower rate and cannot be used in high performance circuits. As a result, dynamic CMOS logic is used inintegrated circuits bec
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Holmes, Jim, A. Matthew Francis, Ian Getreu, Matthew Barlow, Affan Abbasi, and H. Alan Mantooth. "Extended High-Temperature Operation of Silicon Carbide CMOS Circuits for Venus Surface Application." Journal of Microelectronics and Electronic Packaging 13, no. 4 (2016): 143–54. http://dx.doi.org/10.4071/imaps.527.

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In the last decade, significant effort has been expended toward the development of reliable, high-temperature integrated circuits. Designs based on a variety of active semiconductor devices including junction field-effect transistors and metal-oxide-semiconductor (MOS) field-effect transistors have been pursued and demonstrated. More recently, advances in low-power complementary MOS (CMOS) devices have enabled the development of highly integrated digital, analog, and mixed-signal integrated circuits. The results of elevated temperature testing (as high as 500°C) of several building block circu
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WANG, WEIZHI, and DONGMING JIN. "CMOS DESIGN OF ANALOG FUZZY SYSTEM." Journal of Circuits, Systems and Computers 14, no. 06 (2005): 1101–12. http://dx.doi.org/10.1142/s0218126605002830.

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This paper proposes several improved CMOS analog integrated circuits for fuzzy inference system as the general modules, including voltage-mode implementations of minimization circuit, programmable Gaussian-like membership function circuit, and centroid algorithm normalization circuit without using division. A two-input/one-output fuzzy system composed of these circuits is implemented and testified as a nonlinear function approximator. HSPICE simulation results show that the proposed circuits provide characteristics of high operation capacity, simple inference, low power dissipation, and high p
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Kleinfelder, S., F. Bieser, Yandong Chen, et al. "Novel integrated CMOS sensor circuits." IEEE Transactions on Nuclear Science 51, no. 5 (2004): 2328–36. http://dx.doi.org/10.1109/tns.2004.836150.

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Clark, David T., Ewan P. Ramsay, A. E. Murphy, et al. "High Temperature Silicon Carbide CMOS Integrated Circuits." Materials Science Forum 679-680 (March 2011): 726–29. http://dx.doi.org/10.4028/www.scientific.net/msf.679-680.726.

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The wide band-gap of Silicon Carbide (SiC) makes it a material suitable for high temperature integrated circuits [1], potentially operating up to and beyond 450°C. This paper describes the development of a 15V SiC CMOS technology developed to operate at high temperatures, n and p-channel transistor and preliminary circuit performance over temperature achieved in this technology.
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Thompson, R. F., D. T. Clark, A. E. Murphy, et al. "High Temperature Silicon Carbide CMOS Integrated Circuits." Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2011, HITEN (2011): 000115–19. http://dx.doi.org/10.4071/hiten-paper5-dclark.

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The wide band-gap of Silicon Carbide makes it a material suitable for IC's [1] operating up to 450°C. The maximum operating temperature achieved will depend on the transistor technology selected, interconnect metallisation and device packaging. This paper describes transistor and circuit results achieved in SiC CMOS technology, where the major issue addressed is the gate dielectric performance. N and p-channel MOSFET structures have been demonstrated operating at temperatures up to 400°C Test circuits including simple logic cells, ring oscillators, operational amplifiers and gate drive circuit
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ALARCÓN, EDUARD, GERARD VILLAR, and ALBERTO POVEDA. "CMOS INTEGRATED CIRCUIT CONTROLLERS FOR SWITCHING POWER CONVERTERS." Journal of Circuits, Systems and Computers 13, no. 04 (2004): 789–811. http://dx.doi.org/10.1142/s0218126604001714.

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Two case examples of high-speed CMOS microelectronic implementations of high-performance controllers for switching power converters are presented. The design and implementation of a current-programmed controller and a general-purpose feedforward one-cycle controller are described. The integrated circuit controllers attain high-performance by means of using current-mode analog signal processing, hence allowing high switching frequencies that extend the operation margin compared to previous designs. Global layout-extracted transistor-level simulation results for 0.8 μm and 0.35 μm standard CMOS
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Dissertations / Theses on the topic "CMOS integrated circuits"

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Chen, Yonggang Suhling J. C. Jaeger Richard C. "CMOS stress sensor circuits." Auburn, Ala., 2006. http://repo.lib.auburn.edu/2006%20Fall/Dissertations/CHEN_YONGGANG_42.pdf.

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Nissinen, J. (Jan). "Integrated CMOS circuits for laser radar transceivers." Doctoral thesis, Oulun yliopisto, 2011. http://urn.fi/urn:isbn:9789514295454.

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Abstract The main aim of this work was to design CMOS receiver channels for the integrated receiver chip of a pulsed time-of-flight (TOF) laser rangefinder. The chip includes both the receiver channel and the time-to-digital converter (TDC) in a single die, thus increasing the level of integration of the system, with the corresponding advantages of a cheaper price and lower power consumption, for example. Receiver channels with both linear and leading edge timing discriminator schemes were investigated. In general the receiver channel consists of a preamplifier, a postamplifier and a timing co
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Woo, Sang Hyun. "Low noise RF CMOS receiver integrated circuits." Diss., Georgia Institute of Technology, 2012. http://hdl.handle.net/1853/50127.

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The objective of this research is to design and implement low-noise wideband RFIC components with CMOS technology for the direct-conversion architecture. This research proposes noise reduction techniques to improve the thermal noise and flicker noise contribution of a low noise amplifier (LNA) and a mixer. Of these techniques, the LNA is found to reduce noise, boost gain, and consume a relatively low amount of power without sacrificing the wideband and linearity advantages of a conventional common gate (CG) topology. The research concludes by investigating the proposed mixer topology, which se
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Fayed, Ayman Adel. "Adaptive techniques for analog and mixed signal integrated circuits." Connect to this title online, 2004. http://rave.ohiolink.edu/etdc/view?acc%5Fnum=osu1097519730.

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Thesis (Ph. D.)--Ohio State University, 2004.<br>Title from first page of PDF file. Document formatted into pages; contains xix, 232 p.; also includes graphics (some col.). Includes bibliographical references (p. 222-230).
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Rabe, Dirk. "Accurate power analysis of integrated CMOS circuits on gate level." [S.l.] : [s.n.], 2001. http://deposit.ddb.de/cgi-bin/dokserv?idn=962733520.

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SamadiBoroujeni, MohammadReza. "High performance CMOS integrated circuits for optical receivers." [College Station, Tex. : Texas A&M University, 2006. http://hdl.handle.net/1969.1/ETD-TAMU-1108.

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Fan, Xinyue. "Intra-gate fault diagnosis of CMOS integrated circuits." Thesis, University of Oxford, 2006. http://ora.ox.ac.uk/objects/uuid:0cd2ed35-1e98-427e-a402-a27fd50752d1.

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Knowing the root cause of why an Integrated Circuit (1C) device fails to function properly is the key to provide the corrective measures to increase the yield and shorten the time to market. In recent years, electrical fault diagnosis method has received growing attention due to the effective and indispensable guiding role it plays in modern fault localization practice when physical measures are more and more confined by the shrinking feature size and condensed internal structure. While most of the fault diagnosis tools are based on gate level fault models, many faults are actually at the tran
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Smith, Anthony V. W. "Implementation of neural networks as CMOS integrated circuits." Thesis, University of Edinburgh, 1988. http://hdl.handle.net/1842/11408.

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This thesis describes research into the VLSI implementation of neural networks. A novel approach is detailed, which uses streams of pulses to signal neural states and chopping clocks to perform multiplication on these streams of pulses. Practical results, using custom VLSI devices, are presented. A second approach uses reduced precision arithmetic as the basis of a digital neural simulator and shows how this arithmetic technique can be used to solve neural problems. Simulation results confirm the viability of this method.
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Bhattacharya, Ritabrata. "Programmable and broadband CMOS radio frequency integrated circuits." Thesis, IIT Delhi, 2016. http://eprint.iitd.ac.in:80//handle/2074/8188.

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Neto, Murillo Fraguas Franco. "Técnica para o projeto de um amplificador operacional folded cascode, classe AB, em tecnologia CMOS." Universidade de São Paulo, 2006. http://www.teses.usp.br/teses/disponiveis/3/3140/tde-05092006-152855/.

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A tendência mundial em torno de sistemas SoC – System on Chip – baseados em processo CMOS – Complementary Metal Oxide Semiconductor – digital, apresenta cada vez mais desafios aos projetistas de circuitos integrados. Em especial se observa que enquanto os projetistas de circuitos digitais podem contar com bibliotecas cada vez mais completas de células digitais semi-prontas e ferramentas cada vez mais poderosas para o aprimoramento do projeto, os projetistas analógicos não contam com tais facilidades, sendo necessário realizar o projeto de novas células analógicas para cada especificação recebi
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Books on the topic "CMOS integrated circuits"

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Ingels, Mark, and Michiel Steyaert. Integrated CMOS Circuits for Optical Communications. Springer Berlin Heidelberg, 2004. http://dx.doi.org/10.1007/978-3-662-07926-3.

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Ingels, Mark. Integrated CMOS Circuits for Optical Communications. Springer Berlin Heidelberg, 2004.

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1959-, Steyaert Michiel, ed. Integrated CMOS circuits for optical communication. Springer-Verlag, 2003.

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Yusuf, Leblebici, ed. CMOS digital integrated circuits: Analysis and design. 3rd ed. McGraw-Hill, 2003.

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Kang, Sung-Mo. CMOS digital integrated circuits: Analysis and design. McGraw-Hill, 1996.

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Kang, Sung-Mo. CMOS digital integrated circuits: Analysis and design. 2nd ed. McGraw-Hill, 1999.

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Yusuf, Leblebici, ed. CMOS digital integrated circuits: Analysis and design. 2nd ed. McGraw-Hill, 1998.

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1964-, Soudris Dimitrios, Piguet Christian, and Goutis Costas, eds. Designing CMOS circuits for low power. Kluwer Academic Publishers, 2002.

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Sheng-Fu, Hsu, ed. Transient-induced latchup in CMOS integrated circuits. Wiley, 2009.

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Ding, Yongwang. High-linearity CMOS RF front-end circuits. Springer, 2004.

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Book chapters on the topic "CMOS integrated circuits"

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Chan, Mansun. "Stacked CMOS Technologies." In Integrated Circuits and Systems. Springer US, 2008. http://dx.doi.org/10.1007/978-0-387-76534-1_3.

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Likhareu, Konstantin K. "Integrated Circuits Beyond CMOS." In Nanoelectronics and Photonics. Springer New York, 2008. http://dx.doi.org/10.1007/978-0-387-76499-3_2.

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Ingels, Mark, and Michiel Steyaert. "Integrated CMOS Optical Receivers." In Integrated CMOS Circuits for Optical Communications. Springer Berlin Heidelberg, 2004. http://dx.doi.org/10.1007/978-3-662-07926-3_3.

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Stan, M. R., G. S. Rose, and M. M. Ziegler. "Hybrid CMOS/Molecular Integrated Circuits." In Into the Nano Era. Springer Berlin Heidelberg, 2009. http://dx.doi.org/10.1007/978-3-540-74559-4_10.

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Cao, Yu. "Predictive Technology Model of Conventional CMOS Devices." In Integrated Circuits and Systems. Springer US, 2011. http://dx.doi.org/10.1007/978-1-4614-0445-3_2.

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Cao, Yu. "Predictive Technology Model of Enhanced CMOS Devices." In Integrated Circuits and Systems. Springer US, 2011. http://dx.doi.org/10.1007/978-1-4614-0445-3_3.

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Cao, Yu. "Statistical Extraction and Modeling of CMOS Variability." In Integrated Circuits and Systems. Springer US, 2011. http://dx.doi.org/10.1007/978-1-4614-0445-3_4.

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Ingels, Mark, and Michiel Steyaert. "The CMOS Optical Receiver." In Integrated CMOS Circuits for Optical Communications. Springer Berlin Heidelberg, 2004. http://dx.doi.org/10.1007/978-3-662-07926-3_2.

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Lee, Hakho, Donhee Ham, and Robert M. Westervelt. "CMOS/Microfluidic Hybrid Systems." In Series on Integrated Circuits and Systems. Springer US, 2007. http://dx.doi.org/10.1007/978-0-387-68913-5_4.

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Goll, Bernhard, and Horst Zimmermann. "Clocked Nanometer CMOS Comparators." In Integrated Circuits for Analog Signal Processing. Springer New York, 2012. http://dx.doi.org/10.1007/978-1-4614-1383-7_8.

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Conference papers on the topic "CMOS integrated circuits"

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Schröter, Philipp, and Frank Klotz. "RF Coupling in CMOS Analog Integrated Circuits." In 2010_EMC-Europe_Wroclaw. IEEE, 2010. https://doi.org/10.23919/emc.2010.10826331.

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Demoulin, B., C. Lardé, and P. Degauque. "Interference Effects in CMOS and TTL Integrated Circuits." In 8th International Zurich Symposium and Technical Exhibition on Electromagnetic Compatibility. IEEE, 1989. https://doi.org/10.23919/emc.1989.10779078.

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Yang, Guangcanlan, Yu Guo, and Hong X. Tang. "Low Loss ScAlN-on-Insulator Photonic Integrated Circuits." In CLEO: Science and Innovations. Optica Publishing Group, 2024. http://dx.doi.org/10.1364/cleo_si.2024.stu4e.2.

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ScAlN has recently emerged as a promising CMOS-compatible material for nonlinear photonics applications, but its exploitation has been limited by its growth on suitable substrates to allow efficient waveguiding. Here, we report a low loss ScAlN-on-insulator photonic circuit enabled by flip-chip bonding.
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Guo, Jyh-Chyurn, and Jyun-Rong Ou. "The Impact of Nanoscale CMOS Devices Scaling and Variations on mm-Wave CMOS Performance." In 2024 19th European Microwave Integrated Circuits Conference (EuMIC). IEEE, 2024. http://dx.doi.org/10.23919/eumic61603.2024.10732380.

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Chernyadiev, Alexander V., Dmytro B. But, Cezary Kołaciński, Kęstutis Ikamas, Wojciech Knap, and Alvydas Lisauskas. "CMOS-integrated terahertz dielectric near-field sensor." In 2024 19th European Microwave Integrated Circuits Conference (EuMIC). IEEE, 2024. http://dx.doi.org/10.23919/eumic61603.2024.10732200.

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Beppu, Shun, Toshiaki Abe, Sho Okii, et al. "A 258-to-280-GHz 100-Gb/s CMOS Transmitter Element in 40-nm CMOS." In 2024 19th European Microwave Integrated Circuits Conference (EuMIC). IEEE, 2024. http://dx.doi.org/10.23919/eumic61603.2024.10732376.

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Ram, Rajeev J. "CMOS Photonic Integrated Circuits." In Optical Fiber Communication Conference. OSA, 2012. http://dx.doi.org/10.1364/ofc.2012.om2e.1.

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Lee, Thomas H. "Terahertz CMOS integrated circuits." In 2014 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT). IEEE, 2014. http://dx.doi.org/10.1109/rfit.2014.6933268.

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Bermak, Amine, and Saqib Mohamad. "CMOS Integrated Circuits for DNA Sensing." In Qatar Foundation Annual Research Conference Proceedings. Hamad bin Khalifa University Press (HBKU Press), 2016. http://dx.doi.org/10.5339/qfarc.2016.hbpp2783.

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Shim, D., C. Mao, R. Han, et al. "Paths to terahertz CMOS integrated circuits." In 2009 IEEE Custom Integrated Circuits Conference (CICC). IEEE, 2009. http://dx.doi.org/10.1109/cicc.2009.5280752.

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Reports on the topic "CMOS integrated circuits"

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Resnick, Douglas, and Konstantin Likharev. Hybrid CMOS/Nanodevice Integrated Circuits Design and Fabrication. Defense Technical Information Center, 2008. http://dx.doi.org/10.21236/ada487894.

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Nuckolls, L. CMOS ASIC (application specific integrated circuit). Office of Scientific and Technical Information (OSTI), 1989. http://dx.doi.org/10.2172/5551185.

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Lim, Chee. High-performance Input/Output Circuit for CMOS Integrated Circuit Interface. Portland State University Library, 2000. http://dx.doi.org/10.15760/etd.7186.

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