Relevant bibliographies by topics / CMOS power amplifier

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  1. Journal articles
  2. Dissertations / Theses
  3. Books
  4. Book chapters
  5. Conference papers

Academic literature on the topic 'CMOS power amplifier'

Author: Grafiati
Published: 3 June 2025
Last updated: 23 June 2025

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Journal articles on the topic "CMOS power amplifier"

1

Shukla, Sachchidanand, Syed Shamroz Arshad, Kavita Thakur, and Geetika Srivastava. "Issues and Challenges in Small-Signal Low-Power Amplifiers: A Review." Indian Journal Of Science And Technology 17, no. 36 (2024): 3787–99. http://dx.doi.org/10.17485/ijst/v17i36.2171.

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Background: Contemporary linear electronic circuit designs frequently include small-signal low-power amplifiers as a fundamental building block. These amplifiers are widely used as LNAs (Low Noise Amplifiers) in the pre-amplifier stages of both low-frequency and high-frequency featured electronic circuits. Objectives: To review the recent advances in the design of small-signal low-power amplifiers based on device configuration of BJTs, JFETs and MOSFETs for low (≤1KHz) and high frequencies (≥1MHz) at smaller input voltage (<1 Volt). Methods: The articles published between 2010 to 2024 are shortlisted from IEEE Xplore, Springer, Science Direct Elsevier, Google Scholar, and MDPI databases and the outcomes of the different techniques are compared on various parameters. Findings: It is found that four-stage CMOS amplifier at TSMC 40nm process technology emerges with highest 84.59dB gain, InP (Indium Phosphide) Distributed Amplifier Using 3-D Interdigital Capacitors carries widest bandwidth of 160 GHz, two stage darlington pair amplifier at 0.18μm under dual input and dual output topologies and four stage CMOS amplifier at 40nm technology realizes lower power consumption of 0.5mW and 0.00086 mW respectively. Small Signal Amplifier based on single stage BJT-JFET Sziklai pair operates at lowest frequency of 11.36 Hz, single stage LNA at 180nm CMOS technology using inductive degenerate topology works at very low supply voltage at +0.5V and, recently reported complementary sziklai based small signal amplifier under CC mode works at lowest -15V supply voltage. Novelty: The review proposed on ‘Small Signal Low Power Amplifier’ is first time reported in this paper. Moreover, it discusses low power small signal amplifiers at both low (≤1KHz) and high (≥MHz) frequencies considering gain enhancement technique, power dissipation reduction technique, and noise reduction technique whereas other review papers emphasize on the general discussion of different topologies only at high frequencies. Keywords: Small-Signal Amplifiers, Low Power Amplifiers, BJTs, JFETs, MOSFETs
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Gangadharan, Shaina, Ruqaiya Khanam, and Veeraiyah Thangasamy. "A Study of RF Power Amplifiers for 5G and Future Generation Mobile Communication: Can FinFET Replace CMOS?" International Journal of Experimental Research and Review 46 (December 30, 2024): 222–39. https://doi.org/10.52756/ijerr.2024.v46.018.

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A low-power strategy that can manage analogue, digital, and RF functionalities on a similar chip is crucial for wireless systems. Various difficulties restrict the widespread adoption of CMOS power amplifiers despite the fact that they provide highly integrated, low-cost wireless communication. Some of the main issues with CMOS power amplifiers include non-linearity, low breakdown voltage, a lack of high-voltage capacitors, and incorrect RF models. The RF signal is amplified without distortions using a linear power amplifier (LPA), which is less effective whenever driven by constant voltage. In order to significantly enhance the effectiveness of the power amplifiers, three frequently utilised techniques—Doherty, envelope elimination and restoration (EER), and envelope tracking (ET) techniques are reviewed in this work. Results point towards ET approach as the one that is ideally suited for future mobile communication systems. The essential component of ET systems, the envelope tracking power source, is what determines how effectively the system functions. It also lists the benefits of FinFET technology over CMOS and looks at three well-liked techniques for increasing power amplifier efficiency. Considering the advent of mobile communications systems, the frequency band and peak-to-average power ratio (PAPR) are quickly growing, posing significant design issues. FinFET as an alternative may considerably reduce the chip area.
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Zhao, Wenzhuo. "Comparison Of Three CMOS Amplifiers Used in Communication." Highlights in Science, Engineering and Technology 111 (August 19, 2024): 18–23. http://dx.doi.org/10.54097/pkmmt761.

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With the rapid development of wireless communication technology, the low power consumption, low cost, and high efficiency of wireless communication equipment have become the development trend. Because of the increasing problems caused by power consumption, to meet the needs of people and the market, people should first understand the principle of low-power amplifiers and scientific research results to get inspiration. This paper summarizes the advantages and disadvantages of three kinds of amplifiers and draws some conclusions to better understand the low-power amplifier. Ultra-low power low noise amplifier circuit with high gain and low voltage operating at 5.2GHz. The folded cascade structure and forward substrate bias technology are used to reduce the operating voltage of LNA, and the input impedance matching of the first amplifier is achieved by the source inductance negative feedback technology. The second stage amplifier introduces the transformer negative feedback Transconductance enhancement technique. The second amplifier is 5.8GHz CMOS power amplifier. A computer-aided method for calculating device values in an RC feedback network is used to improve the stability of a power amplifier. The single-ended power amplifier is designed by using Shanghai 0.18μm CMOS technology. The lase one is ultra-low noise, high linear ultra-wideband low noise amplifier circuit operating at 3.1-10.6GHz. It mainly consists of two stages: the first stage is the input matching stage, which adopts the common gate structure to realize the broadband input matching; The second stage is an amplifier stage, which is composed of an improved common source common gate structure.
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Tiwari, Nitendra kumar. "Low Power Reduction Techniques Implementation and Analysis in Sense Amplifier Circuit Configurations." Journal of Futuristic Sciences and Applications 5, no. 2 (2022): 31–37. http://dx.doi.org/10.51976/jfsa.522205.

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MTCMOS (Multi-Threshold CMOS), sleepy stack, sleepy keeper, and footer stack are examples of low power saving techniques incorporated into the core gpdk 90nm technology papers used in the proposed study using Cadence. The main focus of these tests is the power consumption of various sense amplifier circuits. The simulation results show that the charge-transfer sense amplifier uses much less energy than voltage and current sense amplifiers. The present mode detecting amplifier’s power consumption can be decreased by up to 98 percent by using MTCMOS technology.
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Sachchidanand, Shukla, Shamroz Arshad Syed, Thakur Kavita, and Srivastava Geetika. "Issues and Challenges in Small-Signal Low-Power Amplifiers: A Review." Indian Journal of Science and Technology 17, no. 36 (2024): 3787–99. https://doi.org/10.17485/IJST/v17i36.2171.

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Abstract <strong>Background:</strong>&nbsp;Contemporary linear electronic circuit designs frequently include small-signal low-power amplifiers as a fundamental building block. These amplifiers are widely used as LNAs (Low Noise Amplifiers) in the pre-amplifier stages of both low-frequency and high-frequency featured electronic circuits.<strong>&nbsp;Objectives:</strong>&nbsp;To review the recent advances in the design of small-signal low-power amplifiers based on device configuration of BJTs, JFETs and MOSFETs for low (&le;1KHz) and high frequencies (&ge;1MHz) at smaller input voltage (&lt;1 Volt). Methods: The articles published between 2010 to 2024 are shortlisted from IEEE Xplore, Springer, Science Direct Elsevier, Google Scholar, and MDPI databases and the outcomes of the different techniques are compared on various parameters.<strong>&nbsp;Findings:</strong>&nbsp;It is found that four-stage CMOS amplifier at TSMC 40nm process technology emerges with highest 84.59dB gain, InP (Indium Phosphide) Distributed Amplifier Using 3-D Interdigital Capacitors carries widest bandwidth of 160 GHz, two stage darlington pair amplifier at 0.18&mu;m under dual input and dual output topologies and four stage CMOS amplifier at 40nm technology realizes lower power consumption of 0.5mW and 0.00086 mW respectively. Small Signal Amplifier based on single stage BJT-JFET Sziklai pair operates at lowest frequency of 11.36 Hz, single stage LNA at 180nm CMOS technology using inductive degenerate topology works at very low supply voltage at +0.5V and, recently reported complementary sziklai based small signal amplifier under CC mode works at lowest -15V supply voltage.<strong>&nbsp;Novelty:</strong>&nbsp;The review proposed on &lsquo;Small Signal Low Power Amplifier&rsquo; is first time reported in this paper. Moreover, it discusses low power small signal amplifiers at both low (&le;1KHz) and high (&ge;MHz) frequencies considering gain enhancement technique, power dissipation reduction technique, and noise reduction technique whereas other review papers emphasize on the general discussion of different topologies only at high frequencies. <strong>Keywords:</strong> Small-Signal Amplifiers, Low Power Amplifiers, BJTs, JFETs, MOSFETs
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Lee, Milim, Junhyuk Yang, Jaeyong Lee, and Changkun Park. "Design Techniques for Wideband CMOS Power Amplifiers for Wireless Communications." Electronics 13, no. 9 (2024): 1695. http://dx.doi.org/10.3390/electronics13091695.

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In this study, we designed a wideband CMOS power amplifier to support multi-band and multi-standard wireless communications. First, an input matching technique through LC network and a wideband design technique using a low Q-factor transformer were proposed. In addition, a design technique was proposed to improve output matching using RC feedback. To verify the feasibility of the proposed design methodology for wideband CMOS power amplifiers, the designed power amplifier was fabricated using a 180 nm RFCMOS process. The size including all of the matching network and test pads was 1.38 × 0.90 mm2. In addition, the effectiveness of the proposed power amplifier was verified through the measured results using modulated signals of WCDMA, LTE, and 802.11n WLAN.
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Grujic, Dusan, and Lazar Saranovac. "Broadband power amplifier limitations due to package parasitics." Serbian Journal of Electrical Engineering 12, no. 3 (2015): 275–91. http://dx.doi.org/10.2298/sjee1503275g.

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Limitations of CMOS broadband power amplifiers due to package parasitics have been explored in this paper. The constraints of power amplifier matching network, realized as a third-order Chebyshev filter, have been derived, and a new power amplifier design flow has been proposed. As an example of a proposed design flow, an UWB power amplifier has been designed. Transistor level large signal simulation results are in excellent agreement with theoretical predictions.
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Cancelli, Roberto, Gianfranco Avitabile, and Antonello Florio. "Designing and Optimizing a 2.4 GHz Complementary Metal–Oxide-Semiconductor Class-E Power Amplifier Combining Standard and High-Voltage Metal–Oxide-Semiconductor Field-Effect Transistors." Electronics 14, no. 6 (2025): 1135. https://doi.org/10.3390/electronics14061135.

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The advent of CMOS power amplifiers has enabled compact and cost-effective solutions for RF applications. Among the available options, switching amplifiers are the most competitive due to their superior efficiency. In this paper, we present the design of a fully integrated 130 nm CMOS class-E RF power amplifier optimized for 2.4 GHz ISM band operations that is compliant with the Bluetooth Low Energy (BLE) standard. The amplifier is based on a cascode configuration with charging acceleration capacitance and a combination of standard and high-voltage (HV) MOSFETs, ensuring optimal performance while maintaining device reliability. To identify the best configuration for the proposed circuit, we first provide an overview of basic class-E amplifier operations and critically review optimization techniques proposed in the scientific literature. This review is complemented by a numerical analysis of the potential advantages of using a combined standard-HV MOSFET structure. Post-layout simulations with parasitic parameter extraction demonstrated that the amplifier achieves 40.85% Power Added Efficiency and 20.52 dBm output power.
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Ma, Huijia. "CMOS Embedded High-Efficiency Cardiac Pacemakers Design." Highlights in Science, Engineering and Technology 15 (November 26, 2022): 252–60. http://dx.doi.org/10.54097/hset.v15i.2642.

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With the increasing incidence of sudden cardiac death in recent years, the importance of pacemakers has become particularly important. This paper study CMOS circuit design in pacemakers so that they can stay for a long time without charging. Firstly, compared with class A and B amplifier which has low efficiency and high distortion respectively, class AB amplifiers act as a balance between linearity and efficiency, achieving high current drive capability with very low static power consumption. A current mirror based on transduction multiplication to achieve ultra-low current consumption confirms the usefulness of AB amplifiers in pacemakers. This paper design a low power consumption circuit. Firstly, we compare the circuit diagrams of different A, B class amplifiers and analyze their characteristics. Secondly, we analyzed the principle of Class AB amplifier and verified its efficient characteristics. Finally, we studied the effect of this amplifier on a cardiac pacemaker.
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Oki, Daiki, Satoru Kawauchi, Cong Bing Li, et al. "A Power-Efficient Noise Canceling Technique Using Signal-Suppression Feed-Forward for Wideband LNAs." Key Engineering Materials 643 (May 2015): 109–16. http://dx.doi.org/10.4028/www.scientific.net/kem.643.109.

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This paper presents a power-efficient noise-canceling technique based on the feed-forward amplifiers, considering a fundamental tradeoff between noise figure (NF) and power consumption in the design of wide-band amplifiers. By suppressing the input signal of the noise cancellation amplifier, the nonlinear effect on the amplifier can be reduced, as well as the power consumption can be smaller. Furthermore, as a lower gain of the noise-canceling sub-amplifier can be achieved simultaneously, further reduction of the power consumption becomes possible. The verification of the proposed technique is conducted with Spectre simulation using 90nm CMOS process.
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Dissertations / Theses on the topic "CMOS power amplifier"

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Fritzin, Jonas. "Power Amplifier Circuits in CMOS Technologies." Licentiate thesis, Linköping : Department of Electrical Engineering, Linköpings universitet, 2009. http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-21030.

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Aloui, Sofiane. "Design of 60ghz 65nm CMOS power amplifier." Thesis, Bordeaux 1, 2010. http://www.theses.fr/2010BOR14165/document.

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Le développement d'objets communicants dédiés aux applications Wireless Personal Area Network (WPAN) à 60GHz vise des débits de l'ordre du GBit/sec. Pour satisfaire la contrainte de faible coût, la technologie CMOS silicium est la plus adaptée. L'utilisation de cette technologie est un challenge en soi afin de concilier les aspects « pertes &amp; rendement » vis à vis des contraintes de puissance. Le but de la thèse est de concevoir des amplificateurs de puissance opérant à 60GHz avec la technologie CMOS 65nm de STMicroelectronics. Cette démarche est progressive car il convient d'analyser puis d'optimiser les performances des composants passifs et actifs constituant l'amplificateur de puissance à l'aide des logiciels de simulations électromagnétique et microélectronique. Finalement, des amplificateurs de puissance ont été réalisés et leurs performances répondent au cahier des charges initialement défini<br>Telecommunication industry claims for increasing data rate in wireless communication systems. The major demand of high data rate applications concerns a large panel of home multimedia exchanging data especially for the uncompressed HD data transfer. The 7GHz band around 60GHz is free of use and fulfils the short range gigabit communication requirements. CMOS technology is most appropriate since it drives a fast time to market with a low cost for high integration volume. However, the use of CMOS technology is challenging to satisfy loss and performance trade-off under power constraints. This thesis aims at designing power amplifiers operating at 60GHz with 65nm CMOS technology from STMicroelectronics. This approach is progressive because it is necessary to analyze and optimize the performance of passive and active components constituting the power amplifier using electromagnetic and microelectronics software. Finally, power amplifiers have been made. Their performances met specifications originally defined
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Sjöholm, Olof. "Integrated CMOS Doppler Radar : Power Amplifier Mixer." Thesis, Linköpings universitet, Elektroniska Kretsar och System, 2016. http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-129105.

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This thesis is based on a paper by V. Issakov, presented 2009, where a circuit of a merged power amplifier mixer solution was demonstrated. This work takes that solution and simplifies it for the use at a lower frequency. The implementation target is a Doppler radar application in CMOS that can detect humans in a range of 5 to 15 meters. This could be used as a burglar alarm or an automatic light switch. The report will present the background of Issakov’s work, basic theory used and the implementation of the final design. Simulations will show that the solution presented work, with a 15 dB conversion loss. This design performs well compared to reference mixers. With this report it will be shown that it is possible to make a simple and compact Doppler radar system in CMOS.<br>Denna avhandling bygger på en artikel av V. Issakov, presenterad 2009, där en lösning för att sammanslå en effektförstärkare med en mixer till en krets visades. Detta arbete tar denna lösning och förenklar det för användning vid en lägre frekvens. Målet är att implementera en dopplerradar i CMOS som kan detektera människor inom ett avstånd på 5 till 15 meter. Denna radar skulle kunna användas som ett inbrottslarm eller en automatisk strömbrytare. Rapporten kommer att presentera bakgrunden från Issakov’s arbete, grundläggande teori som används och genomförandet av det slutliga kretsschemat. Simuleringar visar att den presenterade lösningen fungerar, med en 15 dB konverteringsförlust. Denna konstruktion presterar väl jämfört med referens mixrar. Med denna rapport visas det att det är möjligt att göra ett enkelt och kompakt dopplerradarsystem i CMOS.
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Lee, Ockgoo. "High efficiency switching CMOS power amplifiers for wireless communications." Diss., Georgia Institute of Technology, 2009. http://hdl.handle.net/1853/37145.

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High-efficiency performance is one of the most important requirements of power amplifiers (PAs) for wireless applications. However, the design of highly efficient CMOS PAs for watt-level applications is a challenging task. This dissertation focuses on the development of the design method for highly efficient CMOS PAs to overcome the fundamental difficulties presented by CMOS technology. In this dissertation, the design method and analysis for a high-power and highefficiency class-E CMOS PA with a fully integrated transformer have been presented. This work is the first effort to set up a comprehensive design methodology for a fully integrated class-E CMOS PA including effects of an integrated transformer, which is very crucial for watt-level power applications. In addition, to improve efficiency of cascode class-E CMOS PAs, a charging acceleration technique is developed. The method accelerates a charging speed to turn off the common-gate device in the off-state, thus reducing the power loss. To demonstrate the proposed cascode class-E PA, a prototype CMOS PA was implemented in a 0.18-μm CMOS process. Measurements show an improvement of approximately 6% in the power added efficiency. The proposed cascode class-E PA structure is suitable for the design of high-efficiency class-E PAs while it reduces the voltage stress across the device.
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Chan, Chung-Kei Thomas. "CMOS class E power amplifier for mobile communications." Thesis, Imperial College London, 2003. http://hdl.handle.net/10044/1/8524.

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Guimarães, Gabriel Teófilo Neves. "CMOS linear RF power amplifier with fully integrated power combining transformer." reponame:Biblioteca Digital de Teses e Dissertações da UFRGS, 2017. http://hdl.handle.net/10183/169084.

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Este trabalho apresenta o projeto de um amplificador de potência (PA) de rádio-frequência (RF) linear em tecnologia complementar metal-oxido silício (CMOS). Nele são analisados os desafios encontrados no projeto de PAs CMOS assim como soluções encontradas no estado-da-arte. Um destes desafios apresentados pela tecnologia é a baixa tensão de alimentação e passivos com alta perda, o que limita a potência de saída e a eficiência possível de ser atingida com métodos tradicionais de projeto de PA e suas redes de transformação de impedância. Este problema é solucionado através do uso de redes de combinação de impedância integradas, como a usada neste trabalho chamada transformador combinador em série (SCT). Os problemas com o uso de tecnologia CMOS se tornam ainda mais críticos para padrões de comunicação que requerem alta linearidade como os usados para redes sem-fio locais (WLAN) ou padrões de telefonia móvel 3G e 4G. Tais protocolos requerem que o PA opere em uma potência menor do que seu ponto de operação ótimo, degradando sua eficiência. Técnicas de linearização como pré-distorção digital são usadas para aumentar a potência média transmitida. Uma ténica analógica de compensação de distorção AM-PM através da linearização da capacitância de porta dos transistores é usada neste trabalho. O processo de projeto é detalhado e evidencia as relações de compromisso em cada passo, particularmente o impacto da terminação de harmônicos e a qualidade dos passivos na rede de transformação de carga. O projeto do SCT é otimizado para sintonia da impedância de modo comum que é usada para terminar o segundo harmonico de tensão do amplificador. O amplificador projetado tem um único estágio devido a área do chip ser limitada a 1:57 x 1:57 mm2, fato que impacta seu desempenho. O PA foi analisado através de simulação numérica sob várias métricas. Ele atinge uma potência máxima de saída de 24:4 dBm com uma eficiência de dreno de 24:53% e Eficiência em adição de potência (PAE) de 22%. O PA possui uma curva de ganho plana em toda faixa ISM de 2.4 GHz, com magnitude de 15:8 0:1dB. O PA tem um ponto de compressão de OP1dB = 20:03 dBm e o sinal tem um defasamento não-linear de = 1:2o até esta potência de saída. Um teste de intermodulação de dois tons com potência 3dB abaixo do OP1dB tem como resultado uma relação entre intermodulação de terceira ordem e fundamental de IMD3 = 24:22 dB, e de quinta ordem inferior e superior e fundamental de IMD5Inferior = 48:16 dB e IMD5Superior = 49:8 dB. Por fim, mostra-se que o PA satisfaz os requerimentos para operar no padrão IEEE 802.11g. Ele atinge uma potência média de saída de 15:4 dBm apresentando uma magnitude do vetor erro (EVM) de 5:43%, ou 25:3 dB e satisfazendo a máscara de saída para todos os canais.<br>This work presents the design of a fully integrated Radio-frequency (RF) linear Power Amplifier( PA) in complementary metal-oxide silicon (CMOS) technology. In this work we analyse the challenges in CMOS PA design as well as the state-of-the-art solutions. One such challenge presented by this technology is the low supply voltage and high-loss passives, which pose severe limits on the output power and efficiency achieved with traditional PA design methods and load impedance transformation networks. This issue is addressed by the use of on-chip, highly efficient power combining networks such as the one in this work: A series combining transformer (SCT). The problem of using CMOS becomes even more critical for recent communications standards that require high transmitter linearity such as the ones used for wireless local area network (WLAN) or 3G and 4G mobile communications. This requirement is such that the PA operate at a high power back-off from its optimum operating point, degrading efficiency. To address this problem linearization techniques such as digital pre-distortion can be used in order to decrease the necessary power back-off. In this work an analog technique of AM-PM distortion compensation is used to linearize the capacitance at the input of the amplifier’s transistors and reduce this type of distortion that severely impacts the error vector magnitude (EVM) of the signal. The design process is detailed and aims to make evident the trade-offs of PA design and particularly the impact of harmonic termination and the quality of passives on the load transformation network, the series combining transformer design is optimized for common-mode impedance tuning used for 2nd harmonic termination. The circuit has only a single amplifying stage due to its area being limited to 1:57 x 1:57 mm2 and the design is very constrained by this fact. The PA simulated performance is analyzed under various metrics. It achieves a simulated maximum output power of 24:4 dBm with a drain efficiency of 24:53% and power added efficiency (PAE) of 22%. The PA has a very flat power gain of 15:8 0:1 dB throughout the 2.4 GHz industrial, scientific and medical (ISM) band and is unconditionally stable with 4:9. The PA has a compression point of OP1dB = 20:03 dBm and the signal has a non-linear phase shift of = 1:2o up to this output power. A two-tone intermodulation test with 3dB back-off from OP1dB has a ratio of third-order intermodulation to fundamental of IMD3 = 24:22 dB, and lower and upper fifth order intermodulation to fundamental of IMD5Lower = 48:16 dB and IMD5Upper = 49:8 dB. Finally the PA is shown to satisfy the requirements for operation within the institute of electrical and electronic engineers (IEEE) 802.11g standard. It achieves an average output power of 15:4 dBm while having an EVM of 5:43% or 25:3 dB while satisfying the output spectrum mask for all channels.
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Jose, Sajay. "Design of RF CMOS Power Amplifier for UWB Applications." Thesis, Virginia Tech, 2004. http://hdl.handle.net/10919/36391.

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Ever since the FCC allocated 7.5 GHz (from 3.1 GHz to 10.6 GHz) for ultra wideband (UWB) technology, interest has been renewed in both academic and industrial circles to exploit this vast spectrum for short range, high data rate wireless applications. The great potential of UWB lies in the fact that it can co-exist with the already licensed spectrum users and can still pave the way for a wide range of applications. However, this wide bandwidth complicates the circuit level implementation of key RF blocks like the power amplifier (PA), transmit/receive switch, low noise amplifier (LNA) and mixers in an UWB transceiver. Though expensive technologies like SiGe or GaAs have been used for transceiver realizations, the ultimate goal is to have a single-chip, low-cost solution which can only be achieved by using CMOS technology. Nevertheless, some of the inherent limitations of CMOS like lower fT of transistors make the design of UWB circuits in CMOS an extremely challenging task. Two proposals- Multi-Band OFDM and Direct-Sequence CDMA have been put before the IEEE 802.15.3a task group to decide on the industry standard for the commercial deployment of this technology. Though the debate on which standard is better has not been resolved, proponents of both the groups have already begun to develop prototypes of their respective proposals. This thesis describes the design of a key RF block in the UWB transceiver - the Power Amplifier. For the first part of this work, a PA suitable for MB-OFDM specifications was designed and fabricated in TSMC 0.18um CMOS technology. The class-AB PA is able to cover the lower UWB frequency band from 3.1 GHz to 4.75 GHz and delivers an output power of -2 dBm at 4 GHz. Simulated results show a gain of 19±2 dB achieved over the entire band and the PA consumes 36.54 mW from a 1.8V supply. In the second part of this work, a PA that meets the DS-CDMA specifications was designed and fabricated. This PA operates in the class-AB regime, delivering an output power of -4.2 dBm with input-1dB compression point at -22 dBm. Complete design and implementation was done using TSMC 0.18um CMOS technology and it consumes a very low power of 25 mW, while realizing a flat gain of 19±1 dB across the whole band of operation. All the above mentioned results are from simulations in SpectreRF and measurements are yet to be taken. Additional features like power ON/OFF scheme and output impedance control has also been incorporated in the design.<br>Master of Science
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Tofte, Røislien Nina. "5.8GHz, 1W high efficiency Power Amplifier in 90nm CMOS." Thesis, Norwegian University of Science and Technology, Department of Electronics and Telecommunications, 2009. http://urn.kb.se/resolve?urn=urn:nbn:no:ntnu:diva-9987.

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<p>PREFACE This master’s thesis was written as the final step towards my master’s degree, and it thereby marks the ending of my time at NTNU. The master’s thesis was developed due to a proposal made by Texas Instruments, under the offered supervision of Oddgeir Fikstvedt. My supervisor at NTNU was Morten Olavsbråten. This report describes the design of a power amplifier in the 90nm CMOS technology. The power amplifier is designed to deliver 1W output power at 5.8GHz with a peak efficiency of 50%. Both the class-E and the inverse class-D amplifier are described and examined, but the final choice in amplifier design is the inverse class-D amplifier. Simulation results on a realistic inverse class-D amplifier model are presented as the final outcome. Trondheim, 2009-07-16 Nina Tofte Røislien ABSTRACT Recently CMOS has been introduced as a technology for RF-front end applications. This results in higher levels of integration, which saves fabrication cost and area. The power amplifier often contributes to the highest power consumption, and the efficiency becomes very important. This master’s thesis handles the design of a CMOS power amplifier at 5.8GHz. The design goals were an output power of 30dBm, a Power Added Efficiency of 50% and a gain of 25dB. The main challenge in the CMOS-technology is the low breakdown voltage. This leads to a higher current and a lower load resistance compared to traditionally used RF-technologies. This makes it harder to design a high efficiency amplifier because of more power loss in the parasitic, and a more complex matching network. Two different amplifiers were investigated, both of the switching type; the class-E amplifier and the inverse class-D amplifier (current mode). The class-E amplifier has been studied by others for this kind of use, and has an advantage because of the load network that is synthesized to give non-overlapping voltage and current, even if the device switching time is appreciable fractions of the ac cycle. One can also utilize the high output capacitance of the CMOS-transistor as part of the load network. The inverse class-D amplifier has an advantage of being differential which provides a higher voltage swing across the load, and thereby a higher load resistance and a lower current compared to the class-E. In contrast with conventional voltage-mode class-D amplifiers, the inverse class-D features “zero voltage switching” which eliminates the output capacitance discharge loss. This output capacitance is also utilized as part of the resonance filter in the load network. No previous work of others that uses the inverse class-D amplifier in a similar configuration (RF, CMOS) was discovered. It was found that the inverse class-D amplifier was the best suited for this application. The load resistance of the class-E amplifier became too low compared to the parasitic losses to achieve the design goals. The ground inductance was also totally destructive for the class-E waveforms because of the single-ended topology. Since the inverse class-D amplifier instantly showed much more promising behavior, no time was used trying to solve this problem. The resulting inverse class-D amplifier design has a peak efficiency of 51%, an output power of 30.04dBm. The gain is 25dB for an output power of 28dBm, but sadly it decreases below the design goal to 20.06dB at the point where Pout=30dBm and PAE=50%. ACKNOWLEDGEMENT I would like to give great thanks to Oddgeir Fikstvedt and Morten Olavsbråten for invaluable support during this time, and for making this thesis possible. I would also like to give great thanks Trond Ytterdal for his help with Cadence, and to Tore Barlindhaug for help with some fatal last minute Cadence problems.</p>
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Ho, Ka Wai. "A 1-V CMOS power amplifier for Bluetooth applications /." View Abstract or Full-Text, 2002. http://library.ust.hk/cgi/db/thesis.pl?ELEC%202002%20HO.

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An, Kyu Hwan. "CMOS RF power amplifiers for mobile wireless communications." Diss., Atlanta, Ga. : Georgia Institute of Technology, 2009. http://hdl.handle.net/1853/31717.

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Thesis (Ph.D)--Electrical and Computer Engineering, Georgia Institute of Technology, 2010.<br>Committee Chair: Laskar, Joy; Committee Member: Cressler, John; Committee Member: Kohl, Paul; Committee Member: Kornegay, Kevin; Committee Member: Tentzeris, Emmanouil. Part of the SMARTech Electronic Thesis and Dissertation Collection.
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Books on the topic "CMOS power amplifier"

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Poon, Alan Siu Kei. A 5.8GHz CMOS power amplifier for short-range wireless system. National Library of Canada, 2003.

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Solar Ruiz, Hector, and Roc Berenguer Pérez. Linear CMOS RF Power Amplifiers. Springer US, 2014. http://dx.doi.org/10.1007/978-1-4614-8657-2.

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Dal Fabbro, Paulo Augusto, and Maher Kayal. Linear CMOS RF Power Amplifiers for Wireless Applications. Springer Netherlands, 2010. http://dx.doi.org/10.1007/978-90-481-9361-5.

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Hella, Mona Mostafa. RF CMOS power amplifiers: Theory, design and implementation. Kluwer Academic Publishers, 2002.

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Hella, Mona Mostafa. RF CMOS power amplifiers: Theory, design, and implementation. Kluwer Academic Publishers, 2002.

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Zhao, Dixian, and Patrick Reynaert. CMOS 60-GHz and E-band Power Amplifiers and Transmitters. Springer International Publishing, 2015. http://dx.doi.org/10.1007/978-3-319-18839-3.

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Fabbro, Paulo Augusto Dal. Linear CMOS RF power amplifiers for wireless applications: Efficiency enhancement and frequency-tunable capability. Springer, 2010.

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Forejt, Brett E. Power amplifier design in digital CMOS processes. 1997.

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RF CMOS Power Amplifiers: Theory, Design and Implementation. Kluwer Academic Publishers, 2002. http://dx.doi.org/10.1007/b117692.

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Hella, Mona M. "Rf Cmos Power Amplifiers: Theory, Design and Implementation". Springer, 2013.

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Book chapters on the topic "CMOS power amplifier"

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Solar Ruiz, Hector, and Roc Berenguer Pérez. "Power Amplifier Design." In Linear CMOS RF Power Amplifiers. Springer US, 2013. http://dx.doi.org/10.1007/978-1-4614-8657-2_6.

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Solar Ruiz, Hector, and Roc Berenguer Pérez. "Power Amplifier Fundamentals: Metrics." In Linear CMOS RF Power Amplifiers. Springer US, 2013. http://dx.doi.org/10.1007/978-1-4614-8657-2_2.

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Solar Ruiz, Hector, and Roc Berenguer Pérez. "Power Amplifier Fundamentals: Classes." In Linear CMOS RF Power Amplifiers. Springer US, 2013. http://dx.doi.org/10.1007/978-1-4614-8657-2_3.

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Yuan, Jiann-Shiun. "Power Amplifier Reliability." In CMOS RF Circuit Design for Reliability and Variability. Springer Singapore, 2016. http://dx.doi.org/10.1007/978-981-10-0884-9_4.

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Yuan, Jiann-Shiun. "Power Amplifier Design for Variability." In CMOS RF Circuit Design for Reliability and Variability. Springer Singapore, 2016. http://dx.doi.org/10.1007/978-981-10-0884-9_8.

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Svelto, Francesco, Enrico Sacchi, Francesco Gatta, Danilo Manstretta, and Rinaldo Castello. "CMOS Low-Noise Amplifier Design." In Low-Power Design Techniques and CAD Tools for Analog and RF Integrated Circuits. Springer US, 2001. http://dx.doi.org/10.1007/0-306-48089-1_11.

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Silveira, Fernando, and Denis Flandre. "Power Optimization in Operational Amplifier Design." In Low Power Analog CMOS for Cardiac Pacemakers. Springer US, 2004. http://dx.doi.org/10.1007/978-1-4757-5683-8_4.

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El-Khatib, Ziad, Leonard MacEachern, and Samy A. Mahmoud. "Modulation Schemes Effect on RF Power Amplifier Nonlinearity and RFPA Linearization Techniques." In Distributed CMOS Bidirectional Amplifiers. Springer New York, 2012. http://dx.doi.org/10.1007/978-1-4614-0272-5_2.

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Singh, Jyoti, Megha Agarwal, Vinita Mardi, et al. "Design of Ultra-Low-Power CMOS Class E Power Amplifier." In Proceedings of the International Conference on Microelectronics, Computing & Communication Systems. Springer Singapore, 2017. http://dx.doi.org/10.1007/978-981-10-5565-2_28.

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Dal Fabbro, Paulo Augusto, and Maher Kayal. "Design of the Dynamic Supply CMOS RF Power Amplifier." In Linear CMOS RF Power Amplifiers for Wireless Applications. Springer Netherlands, 2010. http://dx.doi.org/10.1007/978-90-481-9361-5_3.

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Conference papers on the topic "CMOS power amplifier"

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Singh, Neetesh, Jan Lorenzen, Milan Sinobad, et al. "High power >1.5W tunable laser based on integrated LMA power amplifier." In CLEO: Science and Innovations. Optica Publishing Group, 2024. http://dx.doi.org/10.1364/cleo_si.2024.sm2i.3.

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We demonstrate high power tunable laser using a CMOS-compatible integrated LMA power amplifier. We show amplified power up to 1.5 W from around 100 mW of input seed power in the wavelength window spanning from 1800 to 1900 nm.
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Khan, Muhammad Abdullah, and Renato Negra. "Common-drain CMOS power amplifier: An alternative power amplifier." In 2017 47th European Microwave Conference (EuMC). IEEE, 2017. http://dx.doi.org/10.23919/eumc.2017.8231021.

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Khan, Muhammad Abdullah, and Renato Negra. "Common-drain CMOS power amplifier: An alternative power amplifier." In 2017 12th European Microwave Integrated Circuits Conference (EuMIC). IEEE, 2017. http://dx.doi.org/10.23919/eumic.2017.8230715.

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Huang, Yu-Chun, and Zhi-Ming Lin. "High Power CMOS Power Amplifier for WCDMA." In APCCAS 2006. 2006 IEEE Asia Pacific Conference on Circuits and Systems. IEEE, 2006. http://dx.doi.org/10.1109/apccas.2006.342366.

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Yi Shen, Kim-Fung Tsang, Faan Hei Hung, and Iasonas F. Triantis. "A 2.4 GHz CMOS power amplifier." In 2016 IEEE 25th International Symposium on Industrial Electronics (ISIE). IEEE, 2016. http://dx.doi.org/10.1109/isie.2016.7745057.

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Sapawi, R., S. K. Sahari, and D. N. S. D. A. Salleh. "CMOS Power Amplifier for Broadband Applications." In Proceedings of the International Engineering Conference. Research Publishing Services, 2014. http://dx.doi.org/10.3850/978-981-09-4587-9_p04.

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Fu, Jian, Shilei Hao, Yumei Huang, and Zhiliang Hong. "A 2.4G-Hz CMOS Power Amplifier." In 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT). IEEE, 2010. http://dx.doi.org/10.1109/icsict.2010.5667289.

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Ko, Sangwon, and Jenshan Lin. "A Linearized Cascode CMOS Power Amplifier." In 2006 IEEE Annual Wireless and Microwave Technology Conference. IEEE, 2006. http://dx.doi.org/10.1109/wamicon.2006.351920.

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Singh, Neetesh, Jan Lorenzen, Milan Sinobad, et al. "Watt-Class CMOS-Compatible Power Amplifier." In 2023 Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC). IEEE, 2023. http://dx.doi.org/10.1109/cleo/europe-eqec57999.2023.10231735.

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Yoshida, E., Y. Sakai, K. Oishi, et al. "Envelope Tracking CMOS Power Amplifier with High-speed CMOS Envelope Amplifier for Mobile Handsets." In 2013 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 2013. http://dx.doi.org/10.7567/ssdm.2013.h-6-3.

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