Relevant bibliographies by topics / CMOS Ring Oscillator

Contents

  1. Journal articles
  2. Dissertations / Theses
  3. Book chapters
  4. Conference papers

Academic literature on the topic 'CMOS Ring Oscillator'

Author: Grafiati
Published: 4 June 2021
Last updated: 6 September 2023

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Journal articles on the topic "CMOS Ring Oscillator"

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Zainol Murad, Sohiful Anuar, Rizalafande Che Ismail, Mohamad Shahimin Mukhzeer, Ahmad Mohd Fairus та Sapawi Rohana. "Development of Varied CMOS Ring Oscillator Topologies in 0.13-μm CMOS Technology". Applied Mechanics and Materials 446-447 (листопад 2013): 882–86. http://dx.doi.org/10.4028/www.scientific.net/amm.446-447.882.

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This paper presents varied CMOS ring oscillator topologies using Silterra 0.13-µm Process. Three topologies of ring oscillators have been designed which is the single-ended ring oscillator, differential ring oscillator and ring oscillator based variable resistor for 2.4 GHz wireless applications. The proposed designs consist of five stages delay cell. The simulation results show that a single-ended ring oscillator obtained the lowest power consumption of 0.41 mW, while differential oscillator achieves phase noise of −64.44 dBc/Hz at 1 MHz offset frequency. However, ring oscillator based variab
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Sharma, Prakash. "Performance Analysis of Ring Oscillators and Current-Starved VCO in 45-nm CMOS Technology." International Journal for Research in Applied Science and Engineering Technology 10, no. 1 (2022): 732–37. http://dx.doi.org/10.22214/ijraset.2022.39908.

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Abstract: This paper presents a relative study among two Ring oscillators architecture (CMOS, NMOS) and current-starved Voltage-controlled oscillator (CS-VCO) on the basis of different parameters like power dissipation ,phase noise etc. All the design has been done in 45- nm CMOS technology node and 2.3 GHz Centre frequency have been taken for the comparison because of their applications in AV Devices and Radio control. An inherent idea of the given performance parameters has been realize by thecomparative study. The comparative data shows that NMOS based Ring oscillator is good option in term
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Pal, Reena, Najbeen Bano, Dr Shiksha Jain, and Er Deepika Verma. "Literature Review on Ring Oscillator for Biomedical Application Using CMOS." International Journal for Research in Applied Science and Engineering Technology 11, no. 5 (2023): 4858–62. http://dx.doi.org/10.22214/ijraset.2023.52724.

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Abstract: In this paper we have been studies on various design techniques of oscillator for biomedical application. The major subject of this research study is oscillators, which are electronic circuits that generate periodic signals with a constant frequency. A comprehensive review of various oscillator topologies and their characteristics, including stability, frequency range, and phase noise, is provided in this article. The project's objective is to review contemporary oscillator design approaches and consider how they might be applied in a variety of sectors, such as instrumentation, cont
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Tlelo-Cuautle, Esteban, Perla Rubi Castañeda-Aviña, Rodolfo Trejo-Guerra, and Victor Hugo Carbajal-Gómez. "Design of a Wide-Band Voltage-Controlled Ring Oscillator Implemented in 180 nm CMOS Technology." Electronics 8, no. 10 (2019): 1156. http://dx.doi.org/10.3390/electronics8101156.

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The design of a wide-band voltage-controlled oscillator (VCO) modified as a VCO with programmable tail currents is introduced herein. The VCO is implemented by using CMOS current-mode logic stages, which are based on differential pairs that are connected in a ring topology. SPICE simulation results show that the VCO operates within the frequency ranges of 2.65–5.65 GHz, and when it is modified, the VCO with programmable tail currents operates between 1.38 GHz and 4.72 GHz. The design of the CMOS differential stage is detailed along with the symbolic approximation of its dominant pole, which is
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Jankovic, N. D., and V. Brajovic. "Light-sensitive CMOS ring oscillator." Electronics Letters 36, no. 15 (2000): 1281. http://dx.doi.org/10.1049/el:20000922.

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Biabanifard, Sadegh, S. Mehdi Hosseini Largani, and Shahrouz Asadi. "Combined skewed CMOS Ring Oscillator." Electrical & Computer Engineering: An International Journal 4, no. 2 (2015): 1–14. http://dx.doi.org/10.14810/ecij.2015.4201.

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Loong Teo, Julius Han, Noor Alia Nor Hashim, Azrul Ghazali, and Fazrena Azlee Hamid. "Ring oscillator physically unclonable function using sequential ring oscillator pairs for more challenge-response-pairs." Indonesian Journal of Electrical Engineering and Computer Science 13, no. 3 (2019): 892. http://dx.doi.org/10.11591/ijeecs.v13.i3.pp892-901.

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<span>The ring oscillator physically unclonable function (ROPUF) is one of the several types of PUF that has great potential to be used for security purposes. An alternative ROPUF design is proposed with two major differences. Firstly, the memristor is included in the ring oscillators as it is claimed to produce a more random oscillation frequency. Other reasons are its memory-like properties and variable memristance, relative compatibility with CMOS, and small size. Secondly, a different method of generating the response is implemented whereby a sequence of selection of ring oscillator
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Prinzie, Jeffrey, and Valentijn De Smedt. "Single Event Transients in CMOS Ring Oscillators." Electronics 8, no. 6 (2019): 618. http://dx.doi.org/10.3390/electronics8060618.

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In this paper, a time-variant analysis is made on Single-Event Transients (SETs) in integrated CMOS ring oscillators. The Impulse Sensitive Function (ISF) of the oscillator is used to analyze the impact of the relative moment when a particle hits the circuit. The analysis is based on simulations and verified experimentally with a Two-Photon Absorption (TPA) laser setup. The experiments are done using a 65 nm CMOS test chip.
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Lee, Wang-Hoon, Bon-Ju Gu, Yoshio Nishida, Hidekuni Takao, Kazuaki Sawada, and Makoto Ishida. "Oscillation-controlled CMOS ring oscillator for wireless sensor systems." Microelectronics Journal 41, no. 12 (2010): 815–19. http://dx.doi.org/10.1016/j.mejo.2010.07.002.

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Liu, Rui Hong, and Chih Hsiung Shen. "A High Resolution Vernier Ring Oscillator with Ultra-Low Temperature Drift." Advanced Materials Research 542-543 (June 2012): 795–99. http://dx.doi.org/10.4028/www.scientific.net/amr.542-543.795.

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Nowadays, the precise measurement of the time interval between two events with very fine timing resolution is common challenge in the test and measurement instrumentation. This paper present a new high resolution vernier ring oscillator(VRO), which can measures the clock jitter as the operation temperature rises.The goal of this work focuses on the design of a TDC of temperature stable oscillator and we propose an ultra-low temperature drift of a differential delay cell oscillator based on a proportional to absolute temperature(PTAT) compensation methodology. It is very desirable to have a sin
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Dissertations / Theses on the topic "CMOS Ring Oscillator"

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Lang, Radek. "Vysokofrekvenční oscilátor v technologii CMOS." Master's thesis, Vysoké učení technické v Brně. Fakulta elektrotechniky a komunikačních technologií, 2015. http://www.nusl.cz/ntk/nusl-221110.

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This project focus to desing an on-chip oscillator in function as a clock generator. Frequency stability of the oscillator is affected by supply voltage, temperature and process variations. The aim is to propose a clock generator with sufficient frequency stability, low power consumption and a small chip area. This work deals with the types of oscillators and their basic building blocks suitable for our application. It also deals with the study and design options of temperature and process compensation circuit generating the current control, which provides the frequency stabilization of the ou
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Gomez, gomez Ricardo. "Design of innovative solutions to improve the variability and reliability of CMOS circuits on thin film technologies." Thesis, Université Grenoble Alpes, 2020. http://www.theses.fr/2020GRALT023.

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La sensibilité accrue aux variations des procedés de fabrication, de tension, de température et de vieillissement (PVTA) dans les nœuds technologiques avancés d'integration est responsable d'une dégradation significative des spécifications des circuits integrés lors de la fabrication à grand volume. Celle-ci est devenue une préoccupation croissante dans la conception de circuits numériques, qui doit faire face aux exigences de plus en plus strictes des applications modernes en termes d'efficacité énergétique, de fiabilité et de sécurité. Dans ce travail de thèse, les techniques de surveillance
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Wang, Lu. "Automatic synthesis of CMOS ring oscillators." Related electronic resource: Current Research at SU : database of SU dissertations, recent titles available full text, 2006. http://proquest.umi.com/login?COPT=REJTPTU0NWQmSU5UPTAmVkVSPTI=&clientId=3739.

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Ndiaye, Cheikh. "Etude de la fiabilité de type negative bias temperature instability (NBTI) et par porteurs chauds (HC) dans les filières CMOS 28nm et 14nm FDSOI." Thesis, Aix-Marseille, 2017. http://www.theses.fr/2017AIXM0182/document.

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L’avantage de cette architecture FDSOI par rapport à l’architecture Si-bulk est qu’elle possède une face arrière qui peut être utilisée comme une deuxième grille permettant de moduler la tension de seuil Vth du transistor. Pour améliorer les performances des transistors canal p (PMOS), du Germanium est introduit dans le canal (SiGe) et au niveau des sources/drain pour la technologie 14nm FDSOI. Par ailleurs, la réduction de la géométrie des transistors à ces dimensions nanométriques fait apparaître des effets de design physique qui impactent à la fois les performances et la fiabilité des trans
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Eken, Yalcin Alper. "High frequency voltage controlled ring oscillators in standard CMOS." Diss., Georgia Institute of Technology, 2004. http://hdl.handle.net/1853/8064.

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Eken, Yalçin Alper. "High frequency voltage controlled ring oscillators in standard CMOS." Available online, Georgia Institute of Technology, 2004:, 2003. http://etd.gatech.edu/theses/available/etd-06072004-131133/unrestricted/eken%5Fyalcin%5Fa%5F200405%5Fphd.pdf.

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Pereira, Marcos Vinicius Alves [UNESP]. "Projeto de um oscilador controlado por corrente com configuração em anel, tecnologia CMOS e melhoria no ruído de fase." Universidade Estadual Paulista (UNESP), 2010. http://hdl.handle.net/11449/87034.

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Made available in DSpace on 2014-06-11T19:22:31Z (GMT). No. of bitstreams: 0 Previous issue date: 2010-08-30Bitstream added on 2014-06-13T19:27:59Z : No. of bitstreams: 1 pereira_mva_me_ilha.pdf: 1675496 bytes, checksum: e8bfb14cdd90155eb3c43096d4c160df (MD5)<br>Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)<br>Este trabalho apresenta um Oscilador Controlado por Corrente (CCO) com configuração em anel usando tecnologia CMOS, com melhorias na faixa de operação e ruído de fase. O oscilador proposto tem uma faixa de oscilação de 0,0989 GHz a 1,2 GHz com uma corrente de con
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Pereira, Marcos Vinicius Alves. "Projeto de um oscilador controlado por corrente com configuração em anel, tecnologia CMOS e melhoria no ruído de fase /." Ilha Solteira : [s.n.], 2010. http://hdl.handle.net/11449/87034.

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Orientador: Nobuo Oki<br>Banca: Carlos Antonio Alves<br>Banca: Fabiano Fruett<br>Resumo: Este trabalho apresenta um Oscilador Controlado por Corrente (CCO) com configuração em anel usando tecnologia CMOS, com melhorias na faixa de operação e ruído de fase. O oscilador proposto tem uma faixa de oscilação de 0,0989 GHz a 1,2 GHz com uma corrente de controle com um intervalo de 0,1 mA a 3 mA com uma potência dissipada de 11,8 mW. A arquitetura apresenta uma melhoria na fase de ruído de -7 dBc / Hz em relação a um oscilador em anel de três estágios (VCO), também apresentado neste trabalho. A estru
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Ciou, Jhong-Min, and 邱忠民. "Design and Implementation of RF CMOS Ring Oscillator." Thesis, 2008. http://ndltd.ncl.edu.tw/handle/82253945308267541992.

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碩士<br>雲林科技大學<br>電子與資訊工程研究所<br>96<br>This paper presents the design of RF CMOS ring oscillator. It adopts dual-differential delay cell of the three-stage ring oscillator. The internal structure uses dual-differential delay cell. The negative skewed delay path is directly connected to the output of the same stage, and utilizes dual-delay path techniques to obtain a wide tuning range. Voltage controlled ring oscillator is fabricated in a TSMC 0.35 Mixed-Signal 2P4M CMOS technology. After layout the controlled voltage is 1.2V~3.3V, resulting in oscillation frequency ranges of 2.15GHz~0.957GHz, an
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Ho, Kuan-Hsuan, and 何寬烜. "Frequency Synthesizer Using A CMOS Ring Oscillator Architecture." Thesis, 2009. http://ndltd.ncl.edu.tw/handle/36151794829030302601.

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碩士<br>國立中興大學<br>電機工程學系所<br>97<br>This paper presents the design for a frequency synthesizer applied to the electronic system. The voltage controlled oscillator is ring oscillator architecture, and the circuit operation frequency achieves 400MHz based on a TSMC 0.35um 2P4M manufacturing process. The chip area is 0.16mm2.The power consumption is approximately 23mW.When the Vcontrol voltage is 3.3V, the phase noise is -95.96dBc/Hz@1MHz.When the oscillation frequency is 400MHz, the phase noise is -95.88dBc/Hz@1MHz.
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Book chapters on the topic "CMOS Ring Oscillator"

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Dai, Liang, and Ramesh Harjani. "Universal Model for Ring Oscillator Phase Noise." In Design of High-Performance CMOS Voltage-Controlled Oscillators. Springer US, 2003. http://dx.doi.org/10.1007/978-1-4615-1145-8_5.

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Günther, Michael. "A Refined PDAE Network Model for a CMOS Ring Oscillator." In Modeling, Simulation, and Optimization of Integrated Circuits. Birkhäuser Basel, 2003. http://dx.doi.org/10.1007/978-3-0348-8065-7_13.

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Santiccioli, Alessio. "Inductorless Frequency Synthesizers for Low-Cost Wireless." In Special Topics in Information Technology. Springer International Publishing, 2021. http://dx.doi.org/10.1007/978-3-030-62476-7_4.

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AbstractThe quest for ubiquitous wireless connectivity, drives an increasing demand for compact and efficient means of frequency generation. Conventional synthesizer options, however, generally trade one requirement for the other, achieving either excellent levels of efficiency by leveraging LC-oscillators, or a very compact area by relying on ring-oscillators. This chapter describes a recently introduced class of inductorless frequency synthesizers, based on the periodic realignment of a ring-oscillator, that have the potential to break this tradeoff. After analyzing their jitter-power product, the conditions that ensure optimum performance are derived and a novel digital-to-time converter range-reduction technique is introduced, to enable low-jitter and low-power fractional-N frequency synthesis. A prototype, which implements the proposed design guidelines and techniques, has been fabricated in 65 nm CMOS. It occupies a core area of 0:0275 mm$$^{2}$$ 2 and covers the 1:6-to-3:0 GHz range, achieving an absolute rms jitter (integrated from 30 kHz-to-30 MHz) of 397 fs at 2:5 mW power. With a corresponding jitter-power figure-of-merit of −244 dB in the fractional-N mode, the prototype outperforms prior state-of-the-art inductorless frequency synthesizers.
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Hoang, Van-Phuc, Quang Phuong Nguyen, Van Trung Nguyen, Thanh Trung Nguyen, and Xuan Nam Tran. "A Design of CMOS PUF Based on Ring Oscillator and Time-to-Digital Converter." In Lecture Notes of the Institute for Computer Sciences, Social Informatics and Telecommunications Engineering. Springer International Publishing, 2021. http://dx.doi.org/10.1007/978-3-030-77424-0_19.

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Bhushan, Manjul, and Mark B. Ketchen. "Ring Oscillators." In Microelectronic Test Structures for CMOS Technology. Springer New York, 2011. http://dx.doi.org/10.1007/978-1-4419-9377-9_6.

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Raman, Ashish, Vikas Kumar Malav, Ravi Ranjan, and R. K. Sarin. "A Low-Power Hybrid VS-CNTFET-CMOS Ring Voltage-Controlled Oscillator Using Current Starved Power Switching Technology." In Energy Systems in Electrical Engineering. Springer Singapore, 2020. http://dx.doi.org/10.1007/978-981-15-7937-0_10.

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Radic, Jelena, Alena Djugova, Laszlo Nagy, Mirjana Videnovic-Misic, and Ljiljana D. Zivanov. "Comparison of Feedback Influence on Ring Oscillator Performance for IR-UWB Pulse Generator in 0.13 μm and 0.18 μm CMOS Technologies." In IFIP Advances in Information and Communication Technology. Springer Berlin Heidelberg, 2013. http://dx.doi.org/10.1007/978-3-642-37291-9_65.

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Dai, Liang, and Ramesh Harjani. "New Ring VCO Design." In Design of High-Performance CMOS Voltage-Controlled Oscillators. Springer US, 2003. http://dx.doi.org/10.1007/978-1-4615-1145-8_6.

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Dhruba Ghosh, Malay Ranjan Tripathy, and Sujata Pandey. "Design of CMOS Ring Oscillators with Low Phase Noise and Power Dissipation for Data Transmission in RF Range." In Proceedings of the International Conference on Recent Cognizance in Wireless Communication & Image Processing. Springer India, 2016. http://dx.doi.org/10.1007/978-81-322-2638-3_19.

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"Design of Inverter-Based Ring Oscillators." In Design of CMOS Phase-Locked Loops. Cambridge University Press, 2020. http://dx.doi.org/10.1017/9781108626200.004.

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Conference papers on the topic "CMOS Ring Oscillator"

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Tiwari, Kriti, and Abhishek Kumar. "11GHz CMOS ring oscillator." In 2015 International Conference on Computing, Communication & Automation (ICCCA). IEEE, 2015. http://dx.doi.org/10.1109/ccaa.2015.7148572.

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Mahato, Ajay Kumar, and Anu Samanta. "Temperature stabilized CMOS ring oscillator." In 2013 IEEE International Conference in MOOC, Innovation and Technology in Education (MITE). IEEE, 2013. http://dx.doi.org/10.1109/mite.2013.6756333.

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Shima, Takeshi. "CMOS ring oscillator array with braided connections." In 2011 IEEE 9th International New Circuits and Systems Conference (NEWCAS). IEEE, 2011. http://dx.doi.org/10.1109/newcas.2011.5981277.

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Mahato, Ajay Kumar. "Ultra low frequency CMOS ring oscillator design." In 2014 Recent Advances in Engineering and Computational Sciences (RAECS). IEEE, 2014. http://dx.doi.org/10.1109/raecs.2014.6799627.

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Rout, Prakash Kumar, and Debiprasad Priyabrata Acharya. "Design of CMOS ring oscillator using CMODE." In 2011 International Conference on Energy, Automation, and Signal (ICEAS). IEEE, 2011. http://dx.doi.org/10.1109/iceas.2011.6147142.

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Luo, Chao, Tengteng Lu, Zhen Li та ін. "0.18μm CMOS Ring Oscillator at Liquid Helium Temperature". У 2019 IEEE 3rd International Conference on Circuits, Systems and Devices (ICCSD). IEEE, 2019. http://dx.doi.org/10.1109/iccsd.2019.8843292.

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Harb, Shadi M. S., and William Eisenstadt. "A supply-insensitive self-regulating CMOS ring oscillator." In 2015 International SoC Design Conference (ISOCC). IEEE, 2015. http://dx.doi.org/10.1109/isocc.2015.7401652.

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Chan, Victor, Dallas Lea, Marc Bergendahl, et al. "Ring oscillator yield learning methodologies for CMOS technology research." In 2018 29th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC). IEEE, 2018. http://dx.doi.org/10.1109/asmc.2018.8373160.

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Parvizi, Mahdi, Amir Khodabakhsh, and A. Nabavi. "Low-power high-tuning range CMOS ring oscillator VCOs." In 2008 IEEE International Conference on Semiconductor Electronics (ICSE). IEEE, 2008. http://dx.doi.org/10.1109/smelec.2008.4770273.

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Tan Lu, Weijie Zhu, Wanjing Zhu, and Jianguo Ma. "Investigating a novel CMOS ring oscillator with LC-feedbacks." In 2010 IEEE International Conference of Electron Devices and Solid- State Circuits (EDSSC). IEEE, 2010. http://dx.doi.org/10.1109/edssc.2010.5713682.

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