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Journal articles on the topic 'CMOS Temperature Sensor'

Author: Grafiati

Published: 2 June 2025

Last updated: 31 July 2025

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1

Zhang, JianBing, and Zhang Wei. "Design and Implement of High Performance Temperature Sensor Based on Computer." Journal of Nanoelectronics and Optoelectronics 19, no. 10 (2024): 1036–41. http://dx.doi.org/10.1166/jno.2024.3645.

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The sensor system based on computer system has the advantages of low cost and easy expansion. However, real-time clock calibration in computer systems requires high-precision temperature sensors, while heat management applications emphasize ultra-small area and low-voltage operation. Aiming at the above difficulties and challenges, this paper studies the on-chip CMOS temperature sensor in different signal domains of temperature readout circuit. Firstly, several degenerate points in the front-end circuit of BJT temperature sensor using current gain compensation technology are analyzed. Secondly

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2

МАРТИНЮК, ВОЛОДИМИР, та ОЛЕКСАНДР МАЛЮК. "СЕНСОРИ ТЕМПЕРАТУРИ НА БАЗІ CMOS". Herald of Khmelnytskyi National University. Technical sciences 333, № 2 (2024): 380–88. http://dx.doi.org/10.31891/2307-5732-2024-333-2-59.

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The article provides an extensive exploration of the current landscape of CMOS temperature sensor technology, providing insights into various groundbreaking advancements. One notable innovation discussed is the integration of a phase-locked loop (PLL) architecture into temperature sensors, enabling the seamless transmission of temperature data to digital outputs within the frequency domain without the reliance on an external reference source. Furthermore, the article delves into the emergence of energy-efficient temperature sensors and CMOS-based temperature sensors that exploit the thermal de

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3

Shaomin, Ou, and Wei Chenlin. "Design and Implementation of Temperature Sensor Based on Dynamic Current Gain Compensation Technology." Journal of Nanoelectronics and Optoelectronics 18, no. 12 (2023): 1511–16. http://dx.doi.org/10.1166/jno.2023.3512.

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Complementary metal oxide semiconductor (CMOS) temperature sensors are widely used in on-chip systems for their low cost, high integration and low power consumption. A temperature sensor based on parasitic transistor front-end and dynamic current compensation technology is proposed in this paper, which is used to detect temperature in CMOS bipolar junction transistor. In this paper, the parasitic bipolar junction transistor (BJT) device in CMOS process and its temperature sensing principle are introduced, and a temperature sensor based on BJT temperature sensing front-end and dynamic current c

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Wang, Jiayi, Haoyang Li, Weixiao Wang, et al. "A battery-free wireless temperature sensing chipset implemented by 55 and 65 nm CMOS process." Journal of Semiconductors 46, no. 6 (2025): 062202. https://doi.org/10.1088/1674-4926/25010028.

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Abstract In the applications such as food production, the environmental temperature should be measured continuously during the entire process, which requires an ultra-low-power temperature sensor for long-termly monitoring. Conventional temperature sensors trade the measurement accuracy with power consumption. In this work, we present a battery-free wireless temperature sensing chip for long-termly monitoring during food production. A calibrated oscillator-based CMOS temperature sensor is proposed instead of the ADC-based power-hungry circuits in conventional works. In addition, the sensor chi

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OHZONE, T., T. SADAMOTO, T. MORISHITA, K. KOMOKU, T. MATSUDA, and H. IWATA. "A CMOS Temperature Sensor Circuit." IEICE Transactions on Electronics E90-C, no. 4 (2007): 895–902. http://dx.doi.org/10.1093/ietele/e90-c.4.895.

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6

Kumar, Manoj, and Manan Suri. "Hybrid CMOS-PCM temperature sensor." AIP Advances 10, no. 6 (2020): 065205. http://dx.doi.org/10.1063/1.5143127.

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7

Sahafi, Ali, Jafar Sobhi, and Ziaddin Daie Koozehkanani. "Nano Watt CMOS temperature sensor." Analog Integrated Circuits and Signal Processing 75, no. 3 (2013): 343–48. http://dx.doi.org/10.1007/s10470-013-0046-6.

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8

Abarca, Accel, Shuang Xie, Jules Markenhof, and Albert Theuwissen. "Temperature Sensors Integrated into a CMOS Image Sensor." Proceedings 1, no. 4 (2017): 358. http://dx.doi.org/10.3390/proceedings1040358.

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9

Xiong, Qi, Shao Hua Zhou, and Jiang Ping Zeng. "The Analysis of Device Model in CMOS Integrated Temperature Sensor." Advanced Materials Research 986-987 (July 2014): 1600–1605. http://dx.doi.org/10.4028/www.scientific.net/amr.986-987.1600.

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According to the requirement of the CMOS integrated temperature sensor on the device, we analyzed the sub-threshold model of MOS device and the bipolar device under MOS technology. We found the latter is more suitable for a components of CMOS integrated temperature sensor devices. Therefore, we analyzed the influence of the substrate PNP tube’s piezoelectric effect on temperature sensor and compared different types of resistance that lays a theoretical basis for the design of CMOS integrated temperature sensor.

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10

Li, Ang, Haonan Zhao, Yufei Zhou, and Zhenjia Liu. "A Review of CMOS-MEMS Thermal flow Sensor." Applied and Computational Engineering 168, no. 1 (2025): 87–98. https://doi.org/10.54254/2755-2721/2025.24253.

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In Micro-Electro-Mechanical Systems (MEMS) thermal flow sensors, CMOS integration plays a crucial role, especially in enhancing the performance of MEMS thermal flow sensors. This paper reviews the basic principle of CMOS-MEMS thermal flow sensor, introducing three prevalent types. The impact of CMOS integration on sensor performance is introduced, with their advantages highlighted: high integration, low cost, and low energy consumption. Their limitations are also addressed, including Limited material choice, inaccuracy due to heat loss, increased processing complexity and high cost, alongside

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11

Luo, Le. "Design of High Precision Temperature Sensor with Current Gain Compensation Technology for On-Chip Application." Journal of Nanoelectronics and Optoelectronics 18, no. 7 (2023): 789–95. http://dx.doi.org/10.1166/jno.2023.3454.

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The integration of on-chip temperature sensors within various systems, industrial Internet of Things (IoT), and wireless sensor networks is greatly facilitated by their small size, cost-effectiveness, and capability to provide direct digital output. However, the diverse application scenarios pose challenges in designing these sensors. On one hand, real-time clock calibration demands high-precision temperature sensors, while on-chip heat management emphasizes compactness and low-voltage operation. Additionally, streamlining the calibration cost for mass production holds significant practical va

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12

Chen, Chun Chi, Keng Chih Liu, and Shih Hao Lin. "A CMOS Temperature Sensor with a Maximum Accuracy of 1.6 °C after One-Point Calibration." Applied Mechanics and Materials 336-338 (July 2013): 216–20. http://dx.doi.org/10.4028/www.scientific.net/amm.336-338.216.

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This paper presents a time-domain CMOS oscillator-based temperature sensor with one-point calibration for test cost reduction. Compared with the former CMOS sensors with linear delay lines, the proposed work composed of a temperature-to-pulse generator with adjustable time gain and a time-to-digital converter (TDC) can achieve lower circuit complexity and smaller area. A temperature-dependent oscillator for temperature sensing was used to generate the period width proportional to absolute temperature (PTAT). With the help of calibration circuit, an adjustable-gain time amplifier was adopted to

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13

Lewis, Gareth, Patrick Merken, and Marijke Vandewal. "Enhanced Accuracy of CMOS Smart Temperature Sensors by Nonlinear Curvature Correction." Sensors 18, no. 12 (2018): 4087. http://dx.doi.org/10.3390/s18124087.

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In this paper, we demonstrate an improvement in the accuracy of a low-cost smart temperature sensor, by measurement of the nonlinear curvature correction at multiple temperature references. The sensors were positioned inside a climate chamber and connected outside to a micro-controller via a network cable. The chamber temperature was increased systematically over a wide range from −20 °C to 55 °C. A set of calibration curves was produced from the best fitting second-order polynomial curves for the offset in temperature between the sensor and reference. An improvement in accuracy of ±0.15 °C is

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14

Yi, Shu Chung. "A Low Power CMOS Temperature Sensor." Applied Mechanics and Materials 284-287 (January 2013): 1729–33. http://dx.doi.org/10.4028/www.scientific.net/amm.284-287.1729.

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This Paper Proposed a Low-power Smart Temperature Sensor. the Sensor Consisted of a PTAT Circuit, and a Ring Oscillator. the Current of the PTAT Circuit Was Used to Drive the Ring Oscillator which Generates a Temperature Related Signal. the Sensor Was Implemented by the TSMC CMOS 0.35 µm 2P4M Digital Process. the Core Aµµrea Is only 1105.59 µm2. the Power Consumption Is aboutµ 159.15 nw. the Linearity between the Output Frequency and Temperature Is Marked by R-square Rule. the Value of the Linearity Is 0.991 during the Temperature Range. the Proposed Sensor Required only One Supply Voltage. th

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15

Rose, Shane, and Mark Hahn. "A High Temperature, Frequency Output Silicon Temperature Sensor." Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2013, HITEN (2013): 000160–63. http://dx.doi.org/10.4071/hiten-ta19.

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Precision high temperature sensors often require temperature compensation. Quartzdyne pressure transducers use a temperature sensitive quartz crystal for compensation. In an effort to shrink transducer packaging, and increase reliability; a prototype frequency output temperature sensor was designed using a 0.8um silicon bulk CMOS process. The 250°C operational sensor is based on a PTAT current generator. The design uses high temperature design techniques that were proven reliable in prior Quartzdyne ASIC's. The output frequency is 34kHz at 30°C, with a sensitivity of 100Hz/°C and achievable ac

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16

Krummenacher, P., and H. Oguey. "Smart temperature sensor in CMOS technology." Sensors and Actuators A: Physical 22, no. 1-3 (1990): 636–38. http://dx.doi.org/10.1016/0924-4247(89)80048-2.

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17

Popovic Renella, Dragana, Thomas Kaltenbacher, Sasa Spasic, et al. "Revealing the potential of a new 3D Hall sensor in advanced inspection robotics." Acta IMEKO 13, no. 4 (2024): 1–5. https://doi.org/10.21014/actaimeko.v13i4.1752.

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This paper presents a novel CMOS magnetic field sensor designed for the simultaneous measurement of all three magnetic field components (Bx, By, and Bz) at a single location. The sensor incorporates three sets of mutually orthogonal horizontal and vertical Hall-effect elements, each equipped with dedicated biasing circuits and amplifiers. With a compact field-sensitive volume of only 100 x 100 x 10 μm³, the 3D sensor achieves exceptional spatial resolution. Leveraging CMOS technology ensures precise angular accuracy and orthogonality of the three measurement axes. Additionally, the sensor util

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18

Santos, Patrick M., Davies W. L. Monteiro, and Luciana P. Salles. "Current-Mode Self-Amplified CMOS Sensor Intended for 2D Temperature Microgradients Measurement and Imaging." Sensors 20, no. 18 (2020): 5111. http://dx.doi.org/10.3390/s20185111.

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This paper presents the design of a current-mode CMOS self-amplified imager operating in dark conditions, for thermal imaging, which provides an innovative solution for precision thermal contact mapping. Possible applications of this imager range from 3D CMOS integrated circuits to the study of in-vivo biological samples. It can provide a thermal map, static or dynamic, for the measurement of temperature microgradients. Some adaptations are required for the optimization of this self-amplified image sensor since it responds exclusively to the dark currents of the photodiodes throughout the arra

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19

Fan, Hua, Huichao Yue, Jiangmin Mao, et al. "Modelling and fabrication of wide temperature range Al_0.24Ga_0.76As/GaAs Hall magnetic sensors." Journal of Semiconductors 43, no. 3 (2022): 034101. http://dx.doi.org/10.1088/1674-4926/43/3/034101.

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Abstract Silicon Hall-effect sensors have been widely used in industry and research fields due to their straightforward fabrication process and CMOS compatibility. However, as their material property limitations, technicians usually implement complex CMOS circuits to improve the sensors’ performance including temperature drift and offset compensation for fitting tough situation, but it is no doubt that it increases the design complexity and the sensor area. Gallium arsenide (GaAs) is a superior material of Hall-effect device because of its large mobility and stable temperature characteristics.

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20

Aparicio, Hernán, та Pablo Ituero. "A 900 μm2 BiCMOS Temperature Sensor for Dynamic Thermal Management". Sensors 20, № 13 (2020): 3725. http://dx.doi.org/10.3390/s20133725.

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The extreme miniaturization of electronic technologies has turned varying and unpredictable temperatures into a first-class concern for high performance processors which mitigate the problem employing dynamic thermal managements control systems. In order to monitor the thermal profile of the chip, these systems require a collection of on-chip temperature sensors with strict demands in terms of area and power overhead. This paper introduces a sensor topology specially tailored for these requirements. Targeting the 40 nm CMOS technology node, the proposed sensor uses both bipolar and CMOS transi

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21

Liang, Wenbin, Zhenzhen Luo, Xian Yu, and Xiaoyan Chen. "Design of Low Power Temperature Sensor Based on 180 nm Complementary Metal Oxide Semiconductor Technology." Journal of Nanoelectronics and Optoelectronics 18, no. 5 (2023): 551–57. http://dx.doi.org/10.1166/jno.2023.3422.

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CMOS temperature sensor is widely used in power monitoring system, power consumption is an important index. The digital filter power consumption is one of the main sources of the temperature sensor power consumption, and limiting the Digital filter power consumption becomes an important method to realize the low power consumption of the temperature sensor. Based on this, a low power digital filter for CMOS temperature sensors is designed, and a precision adaptive digital filter is proposed, the filter is cascaded by a recursive CIC filter and a FIR filter based on a shift adder, the order of C

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22

Choi, Jin-Ho. "Design of CMOS Temperature Sensor Using Ring Oscillator." Journal of the Korea Institute of Information and Communication Engineering 19, no. 9 (2015): 2081–86. http://dx.doi.org/10.6109/jkiice.2015.19.9.2081.

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23

Deluca, Marco, Robert Wimmer-Teubenbacher, Lisa Mitterhuber, et al. "In-Situ Temperature Measurement on CMOS Integrated Micro-Hotplates for Gas Sensing Devices." Sensors 19, no. 3 (2019): 672. http://dx.doi.org/10.3390/s19030672.

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Metal oxide gas sensors generally need to be operated at elevated temperatures, up to and above 400 °C. Following the need for miniaturization of gas sensors and implementation into smart devices such as smartphones or wireless sensor nodes, recently complementary metal-oxide-semiconductor (CMOS) process-based micro electromechanical system (MEMS) platforms (micro-hotplates, µhps) have been developed to provide Joule heating of metal oxide sensing structures on the microscale. Heating precision and possible spatial temperature distributions over the µhp are key issues potentially affecting the

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24

Agung, Setiabudi, Tamura Hiroki, and Tanno Koichi. "CMOS Temperature Sensor with Programmable Temperature Range for Biomedical Applications." International Journal of Electrical and Computer Engineering (IJECE) 8, no. 2 (2018): 946–53. https://doi.org/10.11591/ijece.v8i2.pp946-953.

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A CMOS temperature sensor circuit with programmable temperature range is proposed for biomedical applications. The proposed circuit consists of temperature sensor core circuit and programmable temperature range digital interface circuit. Both circuits are able to be operated at 1.0 V. The proposed temperature sensor circuit is operated in weak inversion region of MOSFETs. The proposed digital interface circuit converts current into time using Current-to-Time Converter (ITC) and converts time to digital data using counter. Temperature range can be programmed by adjusting pulse width of the trig

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25

Abarca, Accel, and Albert Theuwissen. "A CMOS Image Sensor Dark Current Compensation Using In-Pixel Temperature Sensors." Sensors 23, no. 22 (2023): 9109. http://dx.doi.org/10.3390/s23229109.

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This paper presents a novel technique for dark current compensation of a CMOS image sensor (CIS) by using in-pixel temperature sensors (IPTSs) over a temperature range from −40 °C to 90 °C. The IPTS makes use of the 4T pixel as a temperature sensor. Thus, the 4T pixel has a double functionality, either as a pixel or as a temperature sensor. Therefore, the dark current compensation can be carried out locally by generating an artificial dark reference frame from the temperature measurements of the IPTSs and the temperature behavior of the dark current (previously calibrated). The artificial dark

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26

Peng, Hua. "High performance low power CMOS temperature sensor." Journal of Computational Methods in Sciences and Engineering 23, no. 6 (2023): 3447–60. http://dx.doi.org/10.3233/jcm-237012.

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A temperature sensor based on the combination of a temperature variable oscillator and a linear controlled oscillator is proposed, which can realize temperature detection through the characteristic of frequency changing with temperature. The changing frequency is generated by the two oscillators, and by adjusting the frequency linear change, the linearity of the sensor is also increased. Through the frequency digitizer, the digital signal can be output. Compensation through a process compensator improves the accuracy of the sensor after a single point correction. After conducting tests on 15 e

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27

Bakker, A., and J. H. Huijsing. "Micropower CMOS temperature sensor with digital output." IEEE Journal of Solid-State Circuits 31, no. 7 (1996): 933–37. http://dx.doi.org/10.1109/4.508205.

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28

Kocer, F., and M. P. Flynn. "An RF-powered, wireless CMOS temperature sensor." IEEE Sensors Journal 6, no. 3 (2006): 557–64. http://dx.doi.org/10.1109/jsen.2006.874457.

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29

Kappert, Holger, Sebastian Braun, Norbert Kordas, et al. "A High Temperature SOI-CMOS Chipset Focusing Sensor Electronics for Operating Temperatures up to 300 °C." Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2021, HiTEC (2021): 000018–24. http://dx.doi.org/10.4071/2380-4491.2021.hitec.000018.

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Abstract Sensors are key elements for capturing environmental properties and are increasingly important in the industry for the intelligent control of industrial processes. While in many everyday objects highly integrated sensor systems are already state of the art, the situation in an industrial environment is clearly different. Frequently the use of sensor systems is impossible, because the extreme ambient conditions of industrial processes like high operating temperatures or strong mechanical load do not allow a reliable operation of sensitive electronic components. Fraunhofer is running th

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30

Kappert, Holger, Sebastian Braun, Norbert Kordas, et al. "A High Temperature SOI-CMOS Chipset Focusing Sensor Electronics for Operating Temperatures up to 300°C." Journal of Microelectronics and Electronic Packaging 19, no. 1 (2022): 1–7. http://dx.doi.org/10.4071/imaps.1547377.

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Abstract Sensors are the key elements for capturing environmental properties and are increasingly important in the industry for the intelligent control of industrial processes. While in many everyday objects highly integrated sensor systems are already state of the art, the situation in an industrial environment is clearly different. Frequently, the use of sensor systems is impossible, because the extreme ambient conditions of industrial processes like high operating temperatures or strong mechanical load do not allow the reliable operation of sensitive electronic components. Fraunhofer is run

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31

Passos, Fábio, Gabriel Santos та Marcelino Bicho dos Santos. "A ±0.15 °C (3σ) Inaccuracy CMOS Smart Temperature Sensor from 40 °C to 125 °C with a 10 ms Conversion Time-Leveraging an Adaptative Decimation Filter in 65 nm CMOS Technology". Electronics 13, № 14 (2024): 2823. http://dx.doi.org/10.3390/electronics13142823.

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This paper presents the design and implementation of a highly accurate smart temperature sensor designed in 65 nm CMOS technology. The sensor exhibits a ±0.15 °C (3σ) error across a wide temperature range from −40 °C to 125 °C, catering to diverse application needs. Leveraging advanced CMOS technology, the sensor employs an adaptive decimation filter that allows us to control the conversion time, ensuring that the accuracy of the conversion is maintained even in challenging conditions. The proposed sensor architecture integrates advanced techniques for temperature sensing for improved accuracy

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32

Setiabudi, Agung, Hiroki Tamura, and Koichi Tanno. "CMOS Temperature Sensor with Programmable Temperature Range for Biomedical Applications." International Journal of Electrical and Computer Engineering (IJECE) 8, no. 2 (2018): 946. http://dx.doi.org/10.11591/ijece.v8i2.pp946-953.

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<div class="page" title="Page 1"><div class="layoutArea"><div class="column"><p class="p1"><span class="s1">A CMOS temperature sensor circuit with programmable temperature range is proposed for biomedical applications. The proposed circuit consists of temperature sensor core circuit and programmable temperature range digital interface circuit. Both circuits are able to be operated at 1.0 V. The proposed temperature sensor circuit is operated in weak inversion region of MOSFETs. The proposed digital interface circuit converts current into time using Current-to-Time

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33

Li, Jing, Yuyu Lin, Siyuan Ye, Kejun Wu, Ning Ning, and Qi Yu. "A CMOS-Thyristor Based Temperature Sensor with +0.37 °C/−0.32 °C Inaccuracy." Micromachines 11, no. 2 (2020): 124. http://dx.doi.org/10.3390/mi11020124.

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This paper describes a voltage controlled oscillator (VCO) based temperature sensor. The VCOs are composed of complementary metal–oxide–semiconductor (CMOS) thyristor with the advantage of low power consumption. The period of the VCO is temperature dependent and is function of the transistors’ threshold voltage and bias current. To obtain linear temperature characteristics, this paper constructed the period ratio between two different-type VCOs. The period ratio is independent of the temperature characteristics from current source, which makes the bias current generator simplified. The tempera

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34

Lee, Ya-Chu, Ping-Lin Yang, Chun-I. Chang, and Weileun Fang. "Design and Fabrication of MOS Type Gas Sensor with Vertically Integrated Heater Using CMOS-MEMS Technology." Proceedings 2, no. 13 (2018): 772. http://dx.doi.org/10.3390/proceedings2130772.

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This study implements the metal-oxide-semiconductor (MOS) type gas sensor using the TSMC 0.35 μm 2P4M process. The gas concentration is detected based on the resistance change measured by the proposed sensor. This design has three merits: (1) low-cost post-CMOS process using metal/oxide wet etching, (2) composite sensing material based on ZnO-SnO2 coating on the CMOS-MEMS structure, (3) vertical integration of heater and ZnO-SnO2 gas-sensing films using CMOS-MEMS and drop casting technologies. Proposed design significantly increase the sensitivity at the high operating temperature. In summary,

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Lee, Che Yang, and Mat Jubadi Warsuzarina. "CMOS based thermal detector for processor." Indonesian Journal of Electrical Engineering and Computer Science (IJEECS) 18, no. 1 (2020): 276–83. https://doi.org/10.11591/ijeecs.v18.i1.pp276-283.

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This project proposed a design of low power CMOS-based thermal detector which can detect the temperature of processor such as in Central Processing Unit. By re-designing temperature detector circuit using CMOS technology, the reduction in power consumption and area size of the thermal detector can be obtained. In this paper, the design of thermal detector consists of temperature sensing core, amplifier, and Analog to Digital Converter (ADC), respectively. The sensor was designed using 0.13 µm CMOS technology and operates by sensing the temperature of processor and produced a digital outp

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36

Ma, Hong Yu, Qin Gan Huang, and Ming Qin. "Design and Simulation of a Micromachined CMOS Temperature Sensor." Advanced Materials Research 60-61 (January 2009): 334–38. http://dx.doi.org/10.4028/www.scientific.net/amr.60-61.334.

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A design and simulation of a fully CMOS compatible micromachined multilayer cantilevers-based environmental thermometer are presented. The operation principle of the structure is depending on the mismatch effect of thermal expansion coefficient and the piezoresistive effect of polysilicon in CMOS process. Upon temperature variation, the deformation of the multilayer cantilever resulted from the large thermal expansion coefficient mismatch of different materials can be sensed and translated to an electrical voltage output by using a symmetric piezoresistive Wheatstone bridge. The mechanical cha

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Xie, Shuang, and Albert Theuwissen. "Compensation for Process and Temperature Dependency in a CMOS Image Sensor." Sensors 19, no. 4 (2019): 870. http://dx.doi.org/10.3390/s19040870.

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This paper analyzes and compensates for process and temperature dependency among a (Complementary Metal Oxide Semiconductor) CMOS image sensor (CIS) array. Both the analysis and compensation are supported with experimental results on the CIS’s dark current, dark signal non-uniformity (DSNU), and conversion gain (CG). To model and to compensate for process variations, process sensors based on pixel source follower (SF)’s transconductance gm,SF have been proposed to model and to be compared against the measurement results of SF gain ASF. In addition, ASF’s thermal dependency has been analyzed in

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Szermer, Michał, Mariusz Jankowski, and Marcin Janicki. "Design, Fabrication, and Characterization of a PTAT Sensor Using CMOS Technology." Electronics 13, no. 2 (2024): 429. http://dx.doi.org/10.3390/electronics13020429.

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This paper presents the design of an integrated temperature sensor. The sensor was manufactured using the 3 µm CMOS technology. The proportional to absolute temperature sensor output signal was produced by two MOS transistors with biasing and buffering circuits. The sensor output voltage was linearly proportional to the absolute temperature in a wide range of temperature values. The measurement results coincide very well with the results of the process corner analysis. Certain non-linearities occurring at high temperature values are investigated in this paper in more detail. Additionally, the

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Lin, Dong-Long, Ching-Chun Wang, and Chia-Ling Wei. "Quantified Temperature Effect in a CMOS Image Sensor." IEEE Transactions on Electron Devices 57, no. 2 (2010): 422–28. http://dx.doi.org/10.1109/ted.2009.2037389.

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40

Zito, Fabio, Fabio Aquilino, Letizia Fragomeni, Massimo Merenda, and Francesco G. Della Corte. "CMOS wireless temperature sensor with integrated radiating element." Sensors and Actuators A: Physical 158, no. 2 (2010): 169–75. http://dx.doi.org/10.1016/j.sna.2009.12.014.

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41

Crepaldi, Paulo Cesar, Tales Cleber Pimenta, and Robson Luiz Moreno. "A CMOS low-voltage low-power temperature sensor." Microelectronics Journal 41, no. 9 (2010): 594–600. http://dx.doi.org/10.1016/j.mejo.2010.06.004.

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42

Li, Jiang, Xu Weisheng, and Yu Youlin. "Accurate operation of a CMOS integrated temperature sensor." Microelectronics Journal 41, no. 12 (2010): 897–905. http://dx.doi.org/10.1016/j.mejo.2010.08.001.

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43

Miao, Jinghong, and Jiaqi Li. "A high stable on-chip CMOS temperature sensor." IOSR Journal of Electrical and Electronics Engineering 12, no. 01 (2017): 35–38. http://dx.doi.org/10.9790/1676-1201043538.

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44

Hung, Chung-Chih, and Hsing-Chien Chu. "A Current-Mode Dual-Slope CMOS Temperature Sensor." IEEE Sensors Journal 16, no. 7 (2016): 1898–907. http://dx.doi.org/10.1109/jsen.2015.2511075.

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Chouhan, Shailesh Singh, and Kari Halonen. "A 40 nW CMOS-Based Temperature Sensor with Calibration Free Inaccuracy within ±0.6 ∘C." Electronics 8, no. 11 (2019): 1275. http://dx.doi.org/10.3390/electronics8111275.

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In this study, a temperature equivalent voltage signal was obtained by subtracting output voltages received from two individual temperature sensors. These sensors work in the subthreshold region and generate the output voltage signals that are proportional and complementary to the temperature. Over the temperature range of −40 ∘C to +85 ∘C without using any calibration method, absolute temperature inaccuracy less than ±0.6 ∘C was attained from the measurement of five prototypes of the proposed temperature sensor. The implementation was done in a standard 0.18 μ m CMOS technology with a total a

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Huang, Chun An, and Chih Hsiung Shen. "Highly Sensitive Infrared Temperature Sensor for CMOS Compatible Thermopiles." Materials Science Forum 505-507 (January 2006): 73–78. http://dx.doi.org/10.4028/www.scientific.net/msf.505-507.73.

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A high-sensitivity infrared detector requires small thermal capacitance and small thermal conductance to maximize the temperature change and signal induced by incident IR radiation. The suspended structure of infrared sensors provides ideal, thermally isolated, structures for support of the thin film detector. A new idea of improving CMOS thermopile performance is introduced to reduce the thermal conductance by dividing the thermocouple into several segments, which greatly increase the heat flow barrier. Then, adjacent segments are connected by a minimum width of alumina wire, which change the

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Abarca, Accel, та Albert Theuwissen. "In-Pixel Temperature Sensors with an Accuracy of ±0.25 °C, a 3σ Variation of ±0.7 °C in the Spatial Domain and a 3σ Variation of ±1 °C in the Temporal Domain". Micromachines 11, № 7 (2020): 665. http://dx.doi.org/10.3390/mi11070665.

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This article presents in-pixel (of a CMOS image sensor (CIS)) temperature sensors with improved accuracy in the spatial and the temporal domain. The goal of the temperature sensors is to be used to compensate for dark (current) fixed pattern noise (FPN) during the exposure of the CIS. The temperature sensors are based on substrate parasitic bipolar junction transistor (BJT) and on the nMOS source follower of the pixel. The accuracy of these temperature sensors has been improved in the analog domain by using dynamic element matching (DEM), a temperature independent bias current based on a bandg

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Fischer, Roland, Heinrich Ditler, Michael Görtz, and Wilfried Mokwa. "Fabrication and Characterization of Bending- Independent Capacitive CMOS Pressure Sensor Stacks." Current Directions in Biomedical Engineering 4, no. 1 (2018): 595–98. http://dx.doi.org/10.1515/cdbme-2018-0143.

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AbstractArtificial limbs, equipped with miniaturized tactile sensors, can handle objects with more dexterousness. Next to detecting forces, the sensor devices are also able to measure temperature. With this additional information, the touched objects can be better characterized. As such sensors, active CMOS-based capacitive pressure sensors are used in this work. The Sensors are thinned to 20-30 μm target thickness to make them bendable. One challenge of such thin sensors is the strong dependence of the output signal upon bending. To compensate this dependency, two sensors were mounted back to

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Yang, Wenxuan, Wenchang Li, Huaxiang Lu, Jian Liu, and Tianyi Zhang. "Dynamic Compensation Method for Humidity Sensors Based on Temperature and Humidity Decoupling." Sensors 22, no. 19 (2022): 7229. http://dx.doi.org/10.3390/s22197229.

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Currently, integrated humidity sensors with fast-response time are widely needed. The most commonly used polyimide capacitive humidity sensor has a long response time, which is difficult to meet the need for a fast response. Most studies focusing on technology and materials have a high cost and are difficult to ensure compatability with the CMOS process. The dynamic compensation method can shorten the response time by only adding digital circuits or software processing. However, conventional compensation technology is not suitable for humidity sensors due to temperature coupling. This paper pr

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Rahul, Kumar Raj, Nikhat Anjum, and Vijay Nath. "A 406.08pW CMOS Temperature Sensor with Sensing Range of -20℃ to 100℃." International Journal of Microsystems and IoT 3, no. 1 (2025): 1480–86. https://doi.org/10.5281/zenodo.15471848.

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This proposed article introduces a design for a low-energy temperature sensor that removes the need for bipolar junction transistors (BJTs). As an alternative, the sensor leverages the temperature dependence of MOSFETs' threshold voltage, simplifying the circuit layout and decreasing power consumption. The proposed sensor structure uses five transistors running inside the subthreshold region, ensuring ultra-low energy operation. The design has been extensively simulated and demonstrated using the Cadence simulation environment with the gpdk 90nm CMOS generation library. The circuit o

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