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Journal articles on the topic 'CMOS Voltage Reference Bandgap'

Author: Grafiati

Published: 4 June 2021

Last updated: 17 February 2022

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1

Kim, Jae-Bung, and Seong-Ik Cho. "Modified Low-Votlage CMOS Bandgap Voltage Reference with CTAT Compensation." Transactions of The Korean Institute of Electrical Engineers 61, no. 5 (May 1, 2012): 753–56. http://dx.doi.org/10.5370/kiee.2012.61.5.753.

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2

Barteselli, Edoardo, Luca Sant, Richard Gaggl, and Andrea Baschirotto. "Design Techniques for Low-Power and Low-Voltage Bandgaps." Electricity 2, no. 3 (July 26, 2021): 271–84. http://dx.doi.org/10.3390/electricity2030016.

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Reverse bandgaps generate PVT-independent reference voltages by means of the sums of pairs of currents over individual matched resistors: one (CTAT) current is proportional to VEB; the other one (PTAT) is proportional to VT (Thermal voltage). Design guidelines and techniques for a CMOS low-power reverse bandgap reference are presented and discussed in this paper. The paper explains firstly how to design the components of the bandgap branches to minimize circuit current. Secondly, error amplifier topologies are studied in order to reveal the best one, depending on the operation conditions. Finally, a low-voltage bandgap in 65 nm CMOS with 5 ppm/°C, with a DC PSR of −91 dB, with power consumption of 5.2 μW and with an area of 0.0352 mm2 developed with these techniques is presented.

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3

Mitrea, O., C. Popa, A. M. Manolescu, and M. Glesner. "A curvature-corrected CMOS bandgap reference." Advances in Radio Science 1 (May 5, 2005): 181–84. http://dx.doi.org/10.5194/ars-1-181-2003.

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Abstract. This paper presents a CMOS bandgap reference that employs a curvature correction technique for compensating the nonlinear voltage temperature dependence of a diode connected BJT. The proposed circuit cancels the first and the second order terms in the VBE(T ) expansion by using the current of an autopolarizedWidlar source and a small correction current generated by a MOSFET biased in weak inversion. The voltage reference has been fabricated in a 0.35µm 3Metal/2Poly CMOS technology and the chip area is approximately 70µm × 110µm. The measured temperature coefficient is about 10.5 ppm/K over a temperature range of 10– 90°C while the power consumption is less than 1.4mW.

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4

Zhou, Qian Neng, Yun Song Li, Jin Zhao Lin, Hong Juan Li, Chen Li, Yu Pang, Guo Quan Li, Xue Mei Cai, and Qi Li. "A High-Order CMOS Bandgap Voltage Reference." Advanced Materials Research 989-994 (July 2014): 1165–68. http://dx.doi.org/10.4028/www.scientific.net/amr.989-994.1165.

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A high-order bandgap voltage reference (BGR) is designed by adopting a current which is proportional to absolute temperature T1.5. The high-order BGR is analyzed and simulated in SMIC 0.18μm CMOS process. Simulation results show that the designed high-order BGR achieves temperature coefficient of 2.54ppm/°C when temperature ranging from-55°C to 125°C. The high-order BGR at 10Hz, 100Hz, 1kHz, 10kHz and 100kHz achieves, respectively, the power supply rejection ratio of-64.01dB, -64.01dB, -64dB, -63.5dB and-53.2dB. When power supply voltage changes from 1.7V to 2.5V, the output voltage deviation of BGR is only 617.6μV.

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5

Zawawi, Ruhaifi Abdullah, and Othman Sidek. "A new curvature-corrected CMOS bandgap voltage reference." IEICE Electronics Express 9, no. 4 (2012): 240–44. http://dx.doi.org/10.1587/elex.9.240.

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6

Becker-Gomez, A., T. Lakshmi Viswanathan, and T. R. Viswanathan. "A Low-Supply-Voltage CMOS Sub-Bandgap Reference." IEEE Transactions on Circuits and Systems II: Express Briefs 55, no. 7 (July 2008): 609–13. http://dx.doi.org/10.1109/tcsii.2008.921580.

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7

Guang, Yang, Bin Yu, and Huang Hai. "Design of a High Performance CMOS Bandgap Voltage Reference." Advanced Materials Research 981 (July 2014): 90–93. http://dx.doi.org/10.4028/www.scientific.net/amr.981.90.

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Bandgap voltage reference, to provide a temperature and power supply insensitive output voltage, is a very important module in the analog integrated circuits and mixed-signal integrated circuits. In this paper, a high performance CMOS bandgap with low-power consumption has been designed. It can get the PTAT (Proportional to absolute temperature) current, and then get the reference voltage. Based on 0.35μm CMOS process, using HSPICE 2008 software for circuit simulation, the results showed that , when the temperature changes from -40 to 80 °C, the proposed circuit’s reference voltage achieve to 1.2V, temperature coefficient is 3.09ppm/°C. Adopt a series of measures, like ESD protection circuit, in layout design. The ultimately design through the DRC and LVS verification, and the final layout size is 700μm * 560μm.

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8

Zhou, Qian Neng, Rong Xue, Hong Juan Li, Jin Zhao Lin, Yun Song Li, Yu Pang, Qi Li, Guo Quan Li, and Lu Deng. "A Sub-1V High Precision CMOS Bandgap Reference." Applied Mechanics and Materials 427-429 (September 2013): 1097–100. http://dx.doi.org/10.4028/www.scientific.net/amm.427-429.1097.

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In this paper, a low temperature coefficient bandgap voltage (BGR) is designed for A/D converter by adopting piecewise-linear compensation technique. The designed BGR is analyzed and simulated in SMIC 0.18μm CMOS process. Simulation results show that the PSRR of the designed BGR achieves-72.51dB, -72.49dB, and-70.58dB at 10Hz, 100Hz and 1kHz respectively. The designed BGR achieve the temperature coefficient of 1.57 ppm/°C when temperature is in the range from-35°C to 125°C. When power supply voltage VDD changes from 1V to 7V, the deviation of the designed BGR output voltage VREF is only 4.465μV.

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9

Qu, Wei, Li Mei Hou, Xiao Xin Sun, Jing Yu Sun, and Liang Yu Li. "The Design of Bandgap Reference Based on Empyrean Aether Software." Applied Mechanics and Materials 687-691 (November 2014): 3489–93. http://dx.doi.org/10.4028/www.scientific.net/amm.687-691.3489.

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A high-performance bandgap reference voltage source design method is proposed in this paper, according to the shortcomings of traditional bandgap reference voltage source. This method combined CSMC 0.35μm CMOS process with Aether software technology, enabling to improve the bandgap reference source op amp performance and take into account accuracy and stability of the system. From the experimental results: this bandgap reference voltage source output voltage has changed about 63 mV when the temperature varied from to , and the line regulator is 0.4mV/V when the power supply voltage varied from 3.2V to 3.3V. This system has advantages of high accuracy and good stability.

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10

Park, Chang-Bum, and Shin-Il Lim. "A Sub-1V Nanopower CMOS Only Bandgap Voltage Reference." Journal of IKEEE 20, no. 2 (June 30, 2016): 192–95. http://dx.doi.org/10.7471/ikeee.2016.20.2.192.

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11

Ria, Andrea, Alessandro Catania, Paolo Bruschi, and Massimo Piotto. "A Low-Power CMOS Bandgap Voltage Reference for Supply Voltages Down to 0.5 V." Electronics 10, no. 16 (August 8, 2021): 1901. http://dx.doi.org/10.3390/electronics10161901.

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A voltage reference is strictly required for sensor interfaces that need to perform nonratiometric data acquisition. In this work, a voltage reference capable of working with supply voltages down to 0.5 V is presented. The voltage reference was based on a classic CMOS bandgap core, properly modified to be compatible with low-threshold or zero-threshold MOSFETs. The advantages of the proposed circuit are illustrated with theoretical analysis and supported by numerical simulations. The core was combined with a recently proposed switched capacitor, inverter-like integrator implementing offset cancellation and low-frequency noise reduction techniques. Experimental results performed on a prototype designed and fabricated using a commercial 0.18 μm CMOS process are presented. The prototype produces a reference voltage of 220 mV with a temperature sensitivity of 45 ppm/°C across a 10–50 °C temperature range. The proposed voltage reference can be used to source currents up to 100 μA with a quiescent current consumption of only 630 nA.

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12

Lee, Min Chin, and Chi Jing Hu. "A CMOS Bandgap References Voltage Circuit Using Current Conveyor for Power Management Applications." Applied Mechanics and Materials 385-386 (August 2013): 1335–39. http://dx.doi.org/10.4028/www.scientific.net/amm.385-386.1335.

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This paper proposes a low power bandgap reference voltage circuit that provides an output reference voltage close to the bandgap voltage having a low output resistance and allows resistive loading. This proposed circuit is design and implemented using the TSMC 0.18μm 1P6M CMOS process. Simulation and measured results verify that the chip size is with power dissipation about 0.1mW, and the operation temperature range formwith temperature coefficient about . The chip supply voltage can from 1.3 to 1.8V with PSRR about 70 dB, and its output reference voltage can stable on .

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13

Li, Qiang, Xiao Yun Tan, and Guan Shi Wang. "A High-Order Curvature-Compensated Bandgap Voltage Reference for Micro-Gyroscope." Key Engineering Materials 503 (February 2012): 12–17. http://dx.doi.org/10.4028/www.scientific.net/kem.503.12.

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The reference is an important part of the micro-gyroscope system. The precision and stability of the reference directly affect the precision of the micro-gyroscope. Unlike the traditional bandgap reference circuit, a circuit using a temperature-dependent resistor ratio generated by a highly-resistive poly resistor and a diffusion resistor in CMOS technology is proposed in this paper. The complexity of the circuit is greatly reduced. Implemented with the standard 0.5μm CMOS technology and 9V power supply voltage, in the range of -40~120°C, the temperature coefficient of the proposed bandgap voltage reference can achieve to about 1.6 ppm/°C. The PSRR of the circuit is -107dB.

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14

Saponara, Sergio. "Integrated Bandgap Voltage Reference for High Voltage Vehicle Applications." Journal of Circuits, Systems and Computers 24, no. 08 (August 12, 2015): 1550125. http://dx.doi.org/10.1142/s021812661550125x.

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This work presents a bandgap voltage reference (BGR) integrated in 0.25-μm bipolar-CMOS-DMOS (BCD) technology. The BGR circuit generates a reference voltage of 1.22 V. It is able to withstand large supply voltage variations of vehicle applications from 4.5 V, e.g., in case of cranking, up to 60-V, maximum value in case of emerging 48-V battery systems for hybrid and electrical vehicles. The circuit has an embedded high-voltage (HV) pseudo-regulator block that provides a more stable internal supply rail for a cascaded low-voltage bandgap core. HV MOS are used only in the pre-regulator block thus allowing the design of a BGR with compact size. The proposed architecture permits to withstand large input voltage variations with a temperature drift of a hundred of ppm/°C, a line regulation (LR) of few mV/V versus the external supply voltage and a power supply rejection ratio (PSRR) higher than 90 dB.

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15

Zhou, Ze-Kun, Yue Shi, Yao Wang, Nie Li, Zhiping Xiao, Yunkun Wang, Xiaolin Liu, Zhuo Wang, and Bo Zhang. "A Resistorless High-Precision Compensated CMOS Bandgap Voltage Reference." IEEE Transactions on Circuits and Systems I: Regular Papers 66, no. 1 (January 2019): 428–37. http://dx.doi.org/10.1109/tcsi.2018.2857821.

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16

Chahardori, Mohammad, Mojtaba Atarodi, and Mohammad Sharifkhani. "A sub 1V high PSRR CMOS bandgap voltage reference." Microelectronics Journal 42, no. 9 (September 2011): 1057–65. http://dx.doi.org/10.1016/j.mejo.2011.06.010.

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17

Ferro, M., F. Salerno, and R. Castello. "A floating CMOS bandgap voltage reference for differential applications." IEEE Journal of Solid-State Circuits 24, no. 3 (June 1989): 690–97. http://dx.doi.org/10.1109/4.32027.

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18

ZHU, ZHANGMING, WEI WEI, LIANXI LIU, and YINTANG YANG. "A HIGH PRECISION CMOS VOLTAGE REFERENCE WITHOUT RESISTORS." Journal of Circuits, Systems and Computers 21, no. 03 (May 2012): 1250019. http://dx.doi.org/10.1142/s0218126612500193.

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With the application of the voltage divider to the traditional bandgap reference without resistors, a high precision CMOS voltage reference without resistors has been proposed. The temperature coefficient has improved because the divider introduces the temperature compensation. The output reference voltage is 410.39 mV at the room temperature. The temperature coefficient of the voltage reference is 3.02 ppm/°C in the range from -20°C to 120°C. Moreover, the power supply rejection ratio of the voltage reference is -52.6 dB and the power consumption is 5.61 μW.

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19

Sun, Ye Chao, Zhuo Lei Huang, and Wei Bing Wang. "A Bandgap Reference without Passive Components Based on Standard CMOS." Applied Mechanics and Materials 475-476 (December 2013): 1679–84. http://dx.doi.org/10.4028/www.scientific.net/amm.475-476.1679.

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A bandgap reference without passive components based on standard CMOS is proposed. Using an improved inverse-function technique without any curvature-compensated techniques, two reference voltages are got in different temperature ranges. One is 1.56V with a temperature coefficient of 9.2ppm/°C in the range [0, 14 °C at 3.3V supply voltage, and the other is 1.546V with 47ppm/°C in [-25, 15 °C at 3.3V. Its PSRR (power supply rejection ratio) is below-60dB at 10kHz, and it is quite suitable for integration in processing circuits of MEMS (micro-electro-mechanical systems) devices.

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20

Wang, Songlin, Shuang Feng, Hui Wang, Yu Yao, Jinhua Mao, and Xinquan Lai. "A novel high accuracy bandgap reference voltage source." Circuit World 43, no. 4 (November 6, 2017): 141–44. http://dx.doi.org/10.1108/cw-04-2017-0019.

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Purpose This paper aims to design a new bandgap reference circuit with complementary metal–oxide–semiconductor (CMOS) technology. Design/methodology/approach Different from the conventional bandgap reference circuit with operational amplifiers, this design directly connects the two bases of the transistors with both the ends of the resistor. The transistor acts as an amplifier to amplify the change of voltage, which is convenient for the feedback regulation of low dropout regulator (LDO) regulator circuit, at last to realize the temperature control. In addition, introducing the depletion-type metal–oxide–semiconductor transistor and the transistor operating in the saturation region through the connection of the novel circuit structure makes a further improvement on the performance of the whole circuit. Findings This design is base on the 0.18?m process of BCD, and the new bandgap reference circuit is verified. The results show that the circuit design not only is simple and novel but also can effectively improve the performance of the circuit. Bandgap voltage reference is an important module in integrated circuits and electronic systems. To improve the stability and performance of the whole circuit, simple structure of the bandgap reference voltage source is essential for a chip. Originality/value This paper adopts a new circuit structure, which directly connects the two base voltages of the transistors with the resistor. And the transistor acts as an amplifier to amplify the change of voltage, which is convenient for the feedback regulation of LDO regulator circuit, at last to realize the temperature control.

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21

Ytterdal, T. "CMOS bandgap voltage reference circuit for supply voltages down to 0.6 V." Electronics Letters 39, no. 20 (2003): 1427. http://dx.doi.org/10.1049/el:20030937.

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22

Ren, Ming Yuan, and En Ming Zhao. "A Bandgap Reference with Temperature Coefficient of 13.2 ppm/°C." Advanced Materials Research 981 (July 2014): 66–69. http://dx.doi.org/10.4028/www.scientific.net/amr.981.66.

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This paper presents a design and analysis method of a bandgap reference circuit. The Bandgap design is realized through the 0.18um CMOS process. Simulation results show that the bandgap circuit outputs 1.239V in the typical operation condition. The variance rate of output voltage is 0.016mV/°C? with the operating temperature varying from-60°C? to 160°C?. And it is 3.27mV/V with the power supply changes from 1.8V to 3.3V.

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23

Xu, Chen, Xiang Ning Fan, Zai Jun Hua, and Zhou Yu. "Design of a CMOS Voltage-Controlled Ring Oscillator with Bandgap Voltage Reference." Applied Mechanics and Materials 618 (August 2014): 558–62. http://dx.doi.org/10.4028/www.scientific.net/amm.618.558.

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Voltage controlled oscillator has been used in every field of the electronics industry, and plays an indispensable role. In the fractional divider, in order to reduce the product size, voltage controlled ring oscillator is used to meet the design requirements, at the same time as much as possible to reduce the area. The design of wide tuning voltage-controlled ring oscillator was designed with the reference voltage source. This design not only could reduce the error brought by the external voltage reference, and was also very good realization structure innovation in the film. This design used 0.5 μ m CMOS Hua technology. The post simulation results show: when the coarse voltage and fine voltage are respectively 1V and 2V, voltage waveform oscillator output swing is 2.4V; when the coarse voltage and fine voltage are respectively 1.13V and 2V, voltage waveform oscillator output swing is 2.8V; when the coarse voltage and fine voltage are respectively 1.3V and 2V, voltage waveform oscillator output swing is 3V. After simulations, the frequency range of the voltage-controlled ring oscillator adjustment is 100 ~ 200MHz.

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24

Nagulapalli, R., K. Hayatleh, S. Barker, A. A. Tammam, P. Georgiou, and F. J. Lidgey. "A 0.55 V Bandgap Reference with a 59 ppm/°C Temperature Coefficient." Journal of Circuits, Systems and Computers 28, no. 07 (June 27, 2019): 1950120. http://dx.doi.org/10.1142/s0218126619501202.

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This paper presents a novel low power, low voltage CMOS bandgap reference (BGR) that overcomes the problems with the existing BJT-based reference circuits by using a MOS transistor operating in sub-threshold region. A proportional to absolute temperature (PTAT) voltage is generated by exploiting the self-bias cascode branch, while a Complementary to Absolute Temperature (CTAT) voltage is generated by using the threshold voltage of the transistor. The proposed circuit is implemented in 65[Formula: see text]nm CMOS technology. Post-layout simulation results show that the proposed circuit works with a supply voltage of 0.55[Formula: see text]V, and generates a 286[Formula: see text]mV reference voltage with a temperature coefficient of 59[Formula: see text]ppm/∘C. The circuit takes 413[Formula: see text]nA current from 0.55[Formula: see text]V supply and occupies 0.00986[Formula: see text]mm2 of active area.

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25

Ishibe, Eder Issao, and João Navarro. "A CMOS Bandgap Reference Circuit with a Temperature Coefficient Adjustment Block." Journal of Integrated Circuits and Systems 9, no. 1 (December 28, 2014): 16–24. http://dx.doi.org/10.29292/jics.v9i1.385.

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A bandgap reference voltage source with a temperature coefficient adjustment block was proposed. The bandgap topology employs current summation and the circuit was designed through metaheuristic algorithms in a 0.35-mm CMOS technology. Simulations with typical parameters show that the designed circuit has temperature coefficient of 15 ppm/0C, line regulation of 263 ppm/V, and current consumption of 2.71 uA in 1.0 V power supply. An additional 3-bit temperature adjustment block allowed keeping the temperature coefficient values lower than 26.6 ppm/0C for 90% of the circuits, without interfering with the reference voltage output or line regulation values.

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26

Wu, Jin, Ning Qu, Weidong Nie, and Hao Li. "A simple curvature-compensated technique for CMOS bandgap voltage reference." IEICE Electronics Express 8, no. 17 (2011): 1374–79. http://dx.doi.org/10.1587/elex.8.1374.

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27

Liu, Shubin, Zhangming Zhu, Huaxi Gu, Minjie Liu, Lianxi Liu, and Yintang Yang. "A CMOS 4.6ppm/^|^deg;C curvature-compensated bandgap voltage reference." IEICE Electronics Express 9, no. 20 (2012): 1617–23. http://dx.doi.org/10.1587/elex.9.1617.

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28

Bo Wang, Man Kay Law, and Amine Bermak. "A Precision CMOS Voltage Reference Exploiting Silicon Bandgap Narrowing Effect." IEEE Transactions on Electron Devices 62, no. 7 (July 2015): 2128–35. http://dx.doi.org/10.1109/ted.2015.2434495.

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29

Lei, Jianming, Zhen Wang, and Xiaolong Wang. "A 68-nW novel CMOS sub-bandgap voltage reference circuit." Microelectronics Journal 89 (July 2019): 37–40. http://dx.doi.org/10.1016/j.mejo.2019.05.006.

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30

Ming, Xin, Ying-qian Ma, Ze-kun Zhou, and Bo Zhang. "A High-Precision Compensated CMOS Bandgap Voltage Reference Without Resistors." IEEE Transactions on Circuits and Systems II: Express Briefs 57, no. 10 (October 2010): 767–71. http://dx.doi.org/10.1109/tcsii.2010.2067770.

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31

Liao, Jun, Yiqiang Zhao, and Junfeng Geng. "A sub-1 V high-precision CMOS bandgap voltage reference." Journal of Semiconductors 33, no. 2 (February 2012): 025014. http://dx.doi.org/10.1088/1674-4926/33/2/025014.

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32

Kim, Kwang-Hyun, Gyu-Seong Cho, and Young-Hee Kim. "A CMOS Bandgap Reference Voltage Generator for a CMOS Active Pixel Sensor Imager." Transactions on Electrical and Electronic Materials 5, no. 2 (April 1, 2004): 71–75. http://dx.doi.org/10.4313/teem.2004.5.2.071.

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33

SLAMTI, Anass, Youness MEHDAOUI, Driss CHENOUNI, and Zakia LAKHLIAI. "A sub-1V high PSRR OpAmp based β-multiplier CMOS bandgap voltage reference with resistive division." Indonesian Journal of Electrical Engineering and Computer Science 15, no. 1 (July 1, 2019): 155. http://dx.doi.org/10.11591/ijeecs.v15.i1.pp155-167.

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<span lang="EN-US">A sub-1V opamp based β-multiplier CMOS bandgap voltage reference (BGVR) with high power supply rejection ratio (PSRR) and low temperature coefficient (TC) is proposed in this paper. A current mode regulator scheme is inserted to isolate the supply voltage of the operational amplifier (opamp) and the supply voltage of the BGVR core from the supply voltage source in order to reduce ripple sensitivity and to achieve a high PSRR. The proposed circuit is designed and simulated in 0.18-μm standard CMOS technology. The proposed voltage reference delivers an output voltage of 634.6mV at 27°C. Tthe measurement temperature coefficient is 22,3ppm/°C over temperature range -40°C to 140°C, power supply rejection ratio is -93dB at 10kHz and -71dB at 1MHz and a line regulation of 104μV/V is achieved over supply voltage range 1.2V to 1.8V. The layout area of the proposed circuit is 0.0337mm<sup>2</sup>. The proposed sub-1V bandgap voltage reference can be used as an internal voltage reference in low power LDO regulators and switching regulators.</span>

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34

Zawawi, Ruhaifi Bin Abdullah, Wajahat H. Abbasi, Seung-Hwan Kim, Hojong Choi, and Jungsuk Kim. "Wide-Supply-Voltage-Range CMOS Bandgap Reference for In Vivo Wireless Power Telemetry." Energies 13, no. 11 (June 10, 2020): 2986. http://dx.doi.org/10.3390/en13112986.

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The robustness of the reference circuit in a wide range of supply voltages is crucial in implanted devices. Conventional reference circuits have demonstrated a weak performance over wide supply ranges. Channel-length modulation in the transistors causes the circuit to be sensitive to power supply variation. To solve this inherent problem, this paper proposes a new output-voltage-line-regulation controller circuit. When a variation occurs in the power supply, the controller promptly responds to the supply deviation and removes unwanted current in the output path of the reference circuit. The proposed circuit was implemented in a 0.35-μm SK Hynix CMOS standard process. The experimental results demonstrated that the proposed reference circuit could generate a reference voltage of 0.895 V under a power supply voltage of 3.3 V, line regulation of 1.85 mV/V in the supply range of 2.3 to 5 V, maximum power supply rejection ratio (PSRR) of −54 dB, and temperature coefficient of 11.9 ppm/°C in the temperature range of 25 to 100 °C.

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35

Lee, Min Chin, Ming Chia Hsie, and Chi Jing Hu. "Implementation of Low Bandgap Reference Voltage Circuit for Power Management Applications." Advanced Materials Research 562-564 (August 2012): 1517–21. http://dx.doi.org/10.4028/www.scientific.net/amr.562-564.1517.

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This paper proposes a low bandgap reference voltage circuit with low temperature coefficient and independent of suply voltage for applications to power management IC. This proposed circuit is design and implemented using the TSMC 0.35μm CMOS 2P4M process. Based on simulated and measured results , the chip size is 20.6000.680mm with power dissipation about 3.3mW, and the operation temperature range form 0Cto 100C with temperature coefficient about 9.29/ppmC. The chip suply voltage can from 2.9V to 3.3V with PSRR about 44.2 dB, and its output reference voltage can stable at 0.65V.

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36

Cho, Seong-Ik, Hang-Geun Jeong, Hong-Kyu Shin, and Young-Hee Kim. "A CMOS bandgap reference voltage generator with reduced voltage variation and BJT area." Current Applied Physics 7, no. 1 (January 2007): 92–95. http://dx.doi.org/10.1016/j.cap.2006.02.008.

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37

Hu, Jinlong, Huachao Xu, Yuanzhi Zhang, Jie Sun, Tao Du, Chao Lu, and Guofeng Li. "A 1.2 V supply 0.58 ppm/°C CMOS bandgap voltage reference." IEICE Electronics Express 15, no. 16 (2018): 20180521. http://dx.doi.org/10.1587/elex.15.20180521.

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38

Bohannon, Eric, Clyde Washburn, and P. R. Mukund. "An ultra-thin oxide sub-1 V CMOS bandgap voltage reference." International Journal of Circuit Theory and Applications 42, no. 8 (January 3, 2013): 842–57. http://dx.doi.org/10.1002/cta.1892.

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39

Shen, Hongwei, Yubo Wang, Xiaoke Tang, Dejian Li, and Xi Feng. "An ultralow-power CMOS bandgap voltage reference with N+ doped PMOS." Microelectronics Journal 114 (August 2021): 105157. http://dx.doi.org/10.1016/j.mejo.2021.105157.

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40

CHEN, JUN-DA, and CHENG-KAI YE. "DESIGN OF A CMOS BANDGAP REFERENCE CIRCUIT WITH A WIDE TEMPERATURE RANGE, HIGH PRECISION AND LOW TEMPERATURE COEFFICIENT." Journal of Circuits, Systems and Computers 23, no. 08 (June 18, 2014): 1450107. http://dx.doi.org/10.1142/s0218126614501072.

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This paper presents an approach to the design of a high-precision CMOS voltage reference. The proposed circuit is designed for TSMC 0.35 μm standard CMOS process. We design the first-order temperature compensation bandgap voltage reference circuit. The proposed post-simulated circuit delivers an output voltage of 0.596 V and achieves the reported temperature coefficient (TC) of 3.96 ppm/°C within the temperature range from -60°C to 130°C when the supply voltage is 1.8 V. When simulated in a smaller temperature range from -40°C to 80°C, the circuit achieves the lowest reported TC of 2.09 ppm/°C. The reference current is 16.586 μA. This circuit provides good performances in a wide range of temperature with very small TC.

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Huang, Xiao Zong, Lun Cai Liu, Wen Gang Huang, Jun Luo, and Dong Mei Zhu. "An Integrated Ramp Generator for PWM Voltage Regulators." Applied Mechanics and Materials 644-650 (September 2014): 3682–85. http://dx.doi.org/10.4028/www.scientific.net/amm.644-650.3682.

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An integrated ramp generator is presented in this paper. For traditional implementations, the amplitude clamp is realized with zener diode to limit the output voltage to ±VZ, while the zener diode is not available for standard CMOS process. The transmission gate is utilized to make the output voltage in the determined range. The reference voltage is provided by a bandgap voltage reference with temperature compensation, which guarantees the temperature stabilization of the frequency of the ramp generator. The ramp generator was fabricated in a commercial CMOS process. The frequency of 44kHz is achieved under the power supply of 3.5V, and the frequency variation of 41kH to 46kHz with the power supply of 3.3V to 5V.

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Grella, K., S. Dreiner, A. Schmidt, W. Heiermann, H. Kappert, H. Vogt, and U. Paschen. "High Temperature Characterization up to 450 °C of MOSFETs and basic circuits realized in a Silicon-on-Insulator (SOI) CMOS-Technology." Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2012, HITEC (January 1, 2012): 000227–32. http://dx.doi.org/10.4071/hitec-2012-wp15.

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Standard Bulk-CMOS-technology targets use-temperatures of not more than 175 °C. Silicon-on-Insulator-technologies are commonly used up to 250 °C. In this work we evaluate the limit for electronic circuit function realized in thin film SOI-technologies for even higher temperatures. At Fraunhofer IMS a versatile 1.0 μm SOI-CMOS process based on 200 mm wafers is available. It features three layers of tungsten metalization with excellent reliability concerning electromigration, voltage independent capacitors, various resistors, and single-poly-EEPROMs. We present a study of the temperature dependence of MOSFETs and basic circuits produced in this process. The electrical characteristics of NMOSFET- and PMOSFET-transistors were studied up to 450 °C. In a second step we investigated the functionality of ring oscillators, representing digital circuits, and bandgap references as examples of simple analog components. The frequency and the current consumption of ring oscillators and the output voltage of bandgap references were also characterized up to 450 °C. We found that the ring oscillator still functions at this high temperature with a frequency of about one third of the value at room temperature. The output voltage of the bandgap reference is in the specified range up to 250 °C. The deviations above this temperature are analyzed and measures to improve the circuit are discussed. The acquired data provide an important foundation to extend the application of CMOS-technology to its real maximum temperature limits.

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SHI, L. F., X. MA, G. H. QIN, L. Y. CHENG, and X. Q. LAI. "A WIDE SUPPLY RANGE BANDGAP VOLTAGE REFERENCE WITH CURVATURE COMPENSATION." Journal of Circuits, Systems and Computers 22, no. 01 (January 2013): 1250068. http://dx.doi.org/10.1142/s0218126612500685.

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For the requirement of power management controller chips, a wide supply range bandgap voltage reference circuit is presented. The preregulated circuit based on the regulation characteristic of zener diode extends the supply range and increases power supply rejection ratio (PSRR). Compensated by the base-emitter voltage (V BE ) linearization technique, the temperature stability of the bandgap circuit is improved further. The proposed circuit is implemented in a 0.4 μm bipolar CMOS DMOS (BCD) process and Spice simulation has been done for validation. The results of simulation and test show that the supply range of this circuit can reach 7.2 V to 40 V and 159 μV/V of supply voltage dependence; the temperature coefficient is just 3.5 ppm/°C over a wide temperature of -40°C to 125°C and PSRR is up to -94 dB at 1 kHz. For the perfective performance, this circuit can be used in wide temperature and wide supply range integrated circuit design.

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Chan, Hao-Ping, and Yu-Cherng Hung. "None Operational Amplifier (OPA) Based: Design of Analogous Bandgap Reference Voltage." MATEC Web of Conferences 201 (2018): 02002. http://dx.doi.org/10.1051/matecconf/201820102002.

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By using 0.35-um CMOS process, this work achieves a design of analogous band-gap reference voltage circuit with low temperature coefficient. The proposed circuit operates at 3V and generates a reference current of 44 uA. The HSPICE simulation results show the temperature coefficient of this circuit is 23 ppm/°C at range of -10 °C to 100 °C, and the line regulation (the ratio of output current variation to supply voltage variation) is estimated as 1.95 uA/V from supply voltage variation of 3 V to 5 V. The experimental chip is fabricated and measured. The circuit provides adjustable capability for output voltage among temperature variation of -10 - 100 °C. The chip area is 534 × 695 um2. In this new design, the operational amplifier is not necessary. The chip design effort can be great reduced.

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Ishida, Yosuke, and Toru Tanzawa. "A Fully Integrated AC-DC Converter in 1 V CMOS for Electrostatic Vibration Energy Transducer with an Open Circuit Voltage of 10 V." Electronics 10, no. 10 (May 15, 2021): 1185. http://dx.doi.org/10.3390/electronics10101185.

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This paper proposes an AC-DC converter for electrostatic vibration energy harvesting. The converter is composed of a CMOS full bridge rectifier and a CMOS shunt regulator. Even with 1 V CMOS, the open circuit voltage of the energy transducer can be as high as 10 V and beyond. Bandgap reference (BGR) inputs a regulated voltage, which is controlled by the output voltage of the BGR. Built-in power-on reset is introduced, which can minimize the silicon area and power to function normally found upon start-up. The AC-DC converter was fabricated with a 65 nm low-Vt 1 V CMOS with 0.081 mm2. 1 V regulation was measured successfully at 20–70 °C with a power conversion efficiency of 43%.

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Park, Chang-Bum, Kyung-Chan An, and Shin-Il Lim. "A Sub-1V Full CMOS Bandgap Voltage Reference with a Body Bias." JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE 17, no. 5 (October 31, 2017): 621–26. http://dx.doi.org/10.5573/jsts.2017.17.5.621.

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Jun-An, Zhang, Li Guangjun, Zhang Ruitao, Li Xi, Fu Dongbing, and Yan Bo. "A Bandgap Reference in 65 nm CMOS with Low Threshold Voltage MOSFET." Journal of Nanoelectronics and Optoelectronics 12, no. 12 (December 1, 2017): 1384–90. http://dx.doi.org/10.1166/jno.2017.2137.

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Gomez Caicedo, Jhon Alexander, Oscar E. Mattia, Hamilton Klimach, and Sergio Bampi. "0.75 V supply nanowatt resistorless sub-bandgap curvature-compensated CMOS voltage reference." Analog Integrated Circuits and Signal Processing 88, no. 2 (April 4, 2016): 333–45. http://dx.doi.org/10.1007/s10470-016-0722-4.

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Pan, Min, Jiaye Xie, and Lili Pang. "A 0.7 V 5 nW CMOS sub-bandgap voltage reference without resistors." Analog Integrated Circuits and Signal Processing 104, no. 1 (May 10, 2020): 71–79. http://dx.doi.org/10.1007/s10470-020-01660-7.

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Liu, Xiao Wei, Bing Jun Lv, Peng Fei Wang, Liang Yin, and Na Xu. "A Curvature-Compensated, High Power Supply Rejection CMOS Bandgap Reference for MEMS Micro-Accelerometer." Key Engineering Materials 483 (June 2011): 481–86. http://dx.doi.org/10.4028/www.scientific.net/kem.483.481.

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The reference is an important part in the accelerometer system. With the development of science and technology, the request of the performance of accelerometers is increasingly higher and the precision of reference directly affects the performance of accelerometers. Therefore, a reference voltage applicable to accelerometers is presented based on the analysis of basic principles of conventional bandgap reference (BGR) in this paper. A high-order curvature compensation technique, which uses a temperature dependent resistor ratio generated by a high poly resistor and a nwell resistor, effectively serves to reduce temperature coefficient of proposed reference voltage circuit and to a large extent improve its performance. To achieve a high power supply rejection ratio (PSRR) over a broad frequency range, a pre-regulator is introduced to remain the supply voltage of the core circuit of BGR relatively independent of the global supply voltage. The proposed circuitry is designed in standard 2.0μm CMOS process. The simulated result shows that the average temperature coefficient is less than 2ppm/°C in the temperature range from -40 to 120°C. The improvement on temperature coefficient (TC) is about 10 times reduction compared to the conventional approach. And the PSR at DC frequency and 1kHz achieves -107 and -71dB respectively at 9.0V supply voltage.

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