Relevant bibliographies by topics / CNTFET's

Contents

  1. Journal articles
  2. Dissertations / Theses
  3. Books
  4. Book chapters
  5. Conference papers
  6. Reports

Academic literature on the topic 'CNTFET's'

Author: Grafiati
Published: 5 June 2025
Last updated: 2 August 2025

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Journal articles on the topic "CNTFET's"

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Neetu, Sardana, and L.K.Ragha Professor. "CARBON NANO TUBE FIELD EFFECT TRANSISTOR:A REVIEW." INTERNATIONAL JOURNAL OF ENGINEERING SCIENCES & RESEARCH TECHNOLOGY 5, no. 4 (2016): 861–68. https://doi.org/10.5281/zenodo.50424.

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Carbon Nano Tube Field Effect Transistor (CNTFET) has various extraordinary electrical and mechanical properties and due to this CNTFET is turning out to be the forefront material for future electronics. In this paper, the review of CNTFETs is presented. MOSFET technology has limited scope  for further enhancement. With a motivation to find alternatives, we explore the domain of CNTFETs. The structure, operation and the various performance parameters have been discussed. The effect of threshold voltage, temperature, channel length,delay and power consumption for both CNTFETs and MOSFET de
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Tripathi, Shailendra Kumar, Sarfraz Hussain, Raj Kumar, and Sourabh Sahu. "Design and Analysis of Digitally Tunable Transconductance Amplifier (DTTA) Using CNTFETs." Scientific World Journal 2024 (May 23, 2024): 1–6. http://dx.doi.org/10.1155/2024/2003437.

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Carbon nanotube-FETs (CNTFETs) have become a potential challenger because of their exceptional electrical properties and compatibility with conventional CMOS technology. The design and study of digitally tunable transconductance amplifiers (DTTAs) using CNTFETs are the main topics of this work. By utilizing the special characteristics of CNTFETs, the suggested DTTA design makes transconductance tunable, providing a versatile method of adjusting amplifier settings without requiring modifications to the hardware architecture. This study provides a complete description of the CNTFET modeling tech
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Cho, Geunho. "A Study on the Design Method of Hybrid MOSFET-CNTFET Based SRAM – A Secondary Publication." Journal of Electronic Research and Application 8, no. 1 (2024): 106–12. http://dx.doi.org/10.26689/jera.v8i1.6115.

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More than 10,000 carbon nanotube field-effect transistors (CNTFETs) have been successfully integratedinto one semiconductor chip using conventional semiconductor design procedures and manufacturing processes. Thesetransistors offer advantages such as high carrier mobility, large saturation velocity, low intrinsic capacitance, flexibility, andtransparency. The three-dimensional multilayer structure of the CNTFET semiconductor chip, along with ongoing researchin CNTFET manufacturing processes, increases the potential for creating a hybrid MOSFET-CNTFET semiconductorchip. This chip combines conve
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Kimbrough, Joevonte, Lauren Williams, Qunying Yuan, and Zhigang Xiao. "Dielectrophoresis-Based Positioning of Carbon Nanotubes for Wafer-Scale Fabrication of Carbon Nanotube Devices." Micromachines 12, no. 1 (2020): 12. http://dx.doi.org/10.3390/mi12010012.

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In this paper, we report the wafer-scale fabrication of carbon nanotube field-effect transistors (CNTFETs) with the dielectrophoresis (DEP) method. Semiconducting carbon nanotubes (CNTs) were positioned as the active channel material in the fabrication of carbon nanotube field-effect transistors (CNTFETs) with dielectrophoresis (DEP). The drain-source current (IDS) was measured as a function of the drain-source voltage (VDS) and gate-source voltage (VGS) from each CNTFET on the fabricated wafer. The IDS on/off ratio was derived for each CNTFET. It was found that 87% of the fabricated CNTFETs w
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GUO, JING, SIYURANGA O. KOSWATTA, NEOPHYTOS NEOPHYTOU, and MARK LUNDSTROM. "CARBON NANOTUBE FIELD-EFFECT TRANSISTORS." International Journal of High Speed Electronics and Systems 16, no. 04 (2006): 897–912. http://dx.doi.org/10.1142/s0129156406004077.

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This paper discusses the device physics of carbon nanotube field-effect transistors (CNTFETs). After reviewing the status of device technology, we use results of our numerical simulations to discuss the physics of CNTFETs emphasizing the similarities and differences with traditional FETs. The discussion shows that our understanding of CNTFET device physics has matured to the point where experiments can be explained and device designs optimized. The paper concludes with some thoughts on challenges and opportunities for CNTFET electronics.
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Cho, Gookbin, Eva Grinenval, Jean-Christophe P. Gabriel, and Bérengère Lebental. "Intense pH Sensitivity Modulation in Carbon Nanotube-Based Field-Effect Transistor by Non-Covalent Polyfluorene Functionalization." Nanomaterials 13, no. 7 (2023): 1157. http://dx.doi.org/10.3390/nano13071157.

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We compare the pH sensing performance of non-functionalized carbon nanotubes (CNT) field-effect transistors (p-CNTFET) and CNTFET functionalized with a conjugated polyfluorene polymer (labeled FF-UR) bearing urea-based moieties (f-CNTFET). The devices are electrolyte-gated, PMMA-passivated, 5 µm-channel FETs with unsorted, inkjet-printed single-walled CNT. In phosphate (PBS) and borate (BBS) buffer solutions, the p-CNTFETs exhibit a p-type operation while f-CNTFETs exhibit p-type behavior in BBS and ambipolarity in PBS. The sensitivity to pH is evaluated by measuring the drain current at a gat
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Park, Junsung, Xueqing Liu, Trond Ytterdal, and Michael Shur. "Carbon Nanotube Detectors and Spectrometers for the Terahertz Range." Crystals 10, no. 7 (2020): 601. http://dx.doi.org/10.3390/cryst10070601.

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We present the compact unified charge control model (UCCM) for carbon nanotube field-effect transistors (CNTFETs) to enable the accurate simulation of the DC characteristics and plasmonic terahertz (THz) response in the CNTFETs. Accounting for the ambipolar nature of the carrier transport (n-type and p-type conductivity at positive and negative gate biases, respectively), we use n-type and p-type CNTFET non-linear equivalent circuits connected in parallel, representing the ambipolar conduction in the CNTFETs. This allows us to present a realistic non-linear model that is valid across the entir
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Crippa, Paolo, Giorgio Biagetti, Claudio Turchetti, et al. "A High-Gain CNTFET-Based LNA Developed Using a Compact Design-Oriented Device Model." Electronics 10, no. 22 (2021): 2835. http://dx.doi.org/10.3390/electronics10222835.

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Recently, carbon nanotube field-effect transistors (CNTFETs) have attracted wide attention as promising candidates for components in the next generation of electronic devices. In particular CNTFET-based RF devices and circuits show superior performance to those built with silicon FETs since they are able to obtain higher power-gain and cut-off frequency at lower power dissipation. The aim of this paper is to present a compact, design-oriented model of CNTFETs that is able to ease the development of a complete amplifier. As a case study, the detailed design of a high-gain CNTFET-based broadband
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Ding, Hongyu, Jiangwei Cui, Qiwen Zheng, et al. "Effect of Trapped Charge Induced by Total Ionizing Dose Radiation on the Top-Gate Carbon Nanotube Field Effect Transistors." Electronics 12, no. 4 (2023): 1000. http://dx.doi.org/10.3390/electronics12041000.

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The excellent performance and radiation-hardness potential of carbon nanotube (CNT) field effect transistors (CNTFETs) have attracted wide attention. However, top-gate structure CNTFETs, which are often used to make high-performance devices, have not been studied enough. In this paper, the total ionizing dose (TID) effect of the top-gate structure CNTFETs and the influence of the substrate on top-gate during irradiation are studied. The parameter degradation caused by the irradiation- and radiation-damage mechanisms of the top-gate P-type CNTFET were obtained by performing a Co-60 γ-ray irradi
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Kasthuri, Bha J.K., Prasath T.V. Sudharshana, M. V. T. Ashray, and Ayush Nautiyal. "Design of Low Power Ambipolar CNTFET-Based Digital Adders." International Journal of Microsystems and IoT 2, no. 12 (2024): 1422–29. https://doi.org/10.5281/zenodo.15089726.

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This device having an intrinsic channel and Schottky barrier contacts have been taken into consideration because of the ongoing downscaling of MOSFETs. These transistors are ambipolar, which means that depending on the biasing circumstances, they can operate as either n-type or p-type devices. Due to their unique property of controlled polarity, Carbon Nanotube Field Effect Transistors (CNTFETs) are widely regarded as a possible candidate for future nanoscale transistor devices. As a result, ambipolarity gates based on CNTFETs require far fewer transistors in their circuit architecture than un
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Dissertations / Theses on the topic "CNTFET's"

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Fediai, Artem, Dmitry A. Ryndyk, Gotthard Seifert, et al. "Towards an optimal contact metal for CNTFETs." Royal Society of Chemistry, 2016. https://tud.qucosa.de/id/qucosa%3A30077.

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Downscaling of the contact length Lc of a side-contacted carbon nanotube field-effect transistor (CNTFET) is challenging because of the rapidly increasing contact resistance as Lc falls below 20–50 nm. If in agreement with existing experimental results, theoretical work might answer the question, which metals yield the lowest CNT–metal contact resistance and what physical mechanisms govern the geometry dependence of the contact resistance. However, at the scale of 10 nm, parameter-free models of electron transport become computationally prohibitively expensive. In our work we used a dedicated
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Fediai, Artem, Dmitry A. Ryndyk, Gotthard Seifert, et al. "Towards an optimal contact metal for CNTFETs." Saechsische Landesbibliothek- Staats- und Universitaetsbibliothek Dresden, 2017. http://nbn-resolving.de/urn:nbn:de:bsz:14-qucosa-216371.

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Downscaling of the contact length Lc of a side-contacted carbon nanotube field-effect transistor (CNTFET) is challenging because of the rapidly increasing contact resistance as Lc falls below 20–50 nm. If in agreement with existing experimental results, theoretical work might answer the question, which metals yield the lowest CNT–metal contact resistance and what physical mechanisms govern the geometry dependence of the contact resistance. However, at the scale of 10 nm, parameter-free models of electron transport become computationally prohibitively expensive. In our work we used a dedicated
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Villamizar, Gallardo Raquel Amanda. "Biosensors based on carbon nanotube field effect transistors (cntfets) for detecting pathogenic microorganisms." Doctoral thesis, Universitat Rovira i Virgili, 2009. http://hdl.handle.net/10803/9037.

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Microorganisms are present in a variety of sources, including food, water, animals, environment as well as the human body. They can be harmless or harmful. The latter is also called pathogenic and their detection is extremely important due to health and safety reasons. <br/> <br/>It is well known that food contaminated with bacteria can produce a number of foodborne diseases. As a consequence, thousands of euros are invested each year in medical treatments trying to keep the population healthy. There are more than 250 known foodborne diseases. For example, outbreaks of salmonellosis have
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Dang, Trong Trinh. "Portes logiques à base de CNTFETs : dispersion des caractéristiques et tolérance aux défauts." Grenoble INPG, 2008. http://www.theses.fr/2008INPG0081.

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Parmi les nouveaux nano-dispositifs, les CNTFETs sont des candidats prometteurs. Mais les circuits à base de nanotubes auront une probabilité élevée de défectuosité lors de la fabrication et une assez grande dispersion des caractéristiques. Dans ce contexte, cette thèse étudie l'implantation de portes logiques élémentaires à base de CNTFETs. Une comparaison précise de plusieurs structures logiques montre les avantages de la structure complémentaire pour les applications futures. L'influence des variations paramétriques sur les caractéristiques des CNTFETs et des portes logiques complémentaires
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Moroguma, Alex Yuzo. "Projeto de circuitos RF em tecnologia CNTFET para padrão Bluetooth." reponame:Repositório Institucional da UnB, 2014. http://repositorio.unb.br/handle/10482/16932.

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Dissertação (mestrado)—Universidade de Brasília, Faculdade de Tecnologia, Departamento de Engenharia Elétrica, 2013.<br>Submitted by Ana Cristina Barbosa da Silva (annabds@hotmail.com) on 2014-10-31T15:36:45Z No. of bitstreams: 1 2014_AlexYuzoMoroguma.pdf: 1600794 bytes, checksum: ab86f2dd5113052e628c14e73aca6d39 (MD5)<br>Approved for entry into archive by Patrícia Nunes da Silva(patricia@bce.unb.br) on 2014-11-19T10:54:29Z (GMT) No. of bitstreams: 1 2014_AlexYuzoMoroguma.pdf: 1600794 bytes, checksum: ab86f2dd5113052e628c14e73aca6d39 (MD5)<br>Made available in DSpace on 2014-11-19T10:54:29Z (G
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Heitz, Jérôme. "Etude, modélisation et conception d'un multicapteur chimique à base de CNTFET." Thesis, Strasbourg, 2013. http://www.theses.fr/2013STRAD031/document.

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Depuis quelques années, les explosifs artisanaux à base de peroxyde sont fréquemment utilisés dans les actes de terrorisme. Leur simplicité de conception ne les rend pas moins inoffensifs car ils sont tout aussi puissants que ceux à base de TNT (trinitrotoluène). Au regard des enjeux majeurs de la sécurité globale et en particulier de la protection du citoyen, il devient nécessaire de bénéficier d'instruments de détection fiables. C'est dans ce cadre que s'inscrit ce travail de thèse qui vise à développer un capteur intégré, sensible et sélectif aux traces d'explosifs, notamment ceux à base de
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Liu, Junchen. "Architectures reconfigurables à base de CNTFET (carbon nanotube field effect transistor) double grille." Ecully, Ecole centrale de Lyon, 2008. http://www.theses.fr/2008ECDL0027.

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La poursuite de la loi de Moore nécessite l'exploration et l'utilisation de composants nouveaux pouvant compléter ou remplacer le transistor CMOS dans les systèmes sur puce dans les années à venir. Dans ce contexte, l'émergence de nanocomposants offre l'opportunité d'inventer de nouvelles structures de circuit, d'élaborer des techniques non-conventionnelles de conception et par conséquent de repenser le paradigme de conception des architectures. Le principal objectif de cette thèse est de proposer de nouvelles structures de circuits (portes logiques élémentaires et reconfigurables) exploitant
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HOFFA, JOEL L. "Simulation of Carbon Nanotube Based Field Effect Transistors." University of Cincinnati / OhioLINK, 2007. http://rave.ohiolink.edu/etdc/view?acc_num=ucin1179851272.

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Souza, Jair Fernandes de. "Desenvolvimento de materiais e métodos de fabricação de sensores químicos/bioquímicos baseados em silício e nanoestruturas de carbono (ISFET, CNTFET e GraFET) = Development of materials and methods of fabrication of chemical/biochemical sensors based on silicon and carbon nanostructures (ISFET, CNTFET and GraFET)." [s.n.], 2012. http://repositorio.unicamp.br/jspui/handle/REPOSIP/261064.

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Orientadores: Peter Jürgen Tatsch, José Alexandre Diniz<br>Tese (doutorado) - Universidade Estadual de Campinas, Faculdade de Engenharia Elétrica e de Computação<br>Made available in DSpace on 2018-08-21T00:22:30Z (GMT). No. of bitstreams: 1 Souza_JairFernandesde_D.pdf: 13128989 bytes, checksum: 25325c1093f208d379ae77adc08c90ff (MD5) Previous issue date: 2012<br>Resumo: Este trabalho teve como objetivo o desenvolvimento de materiais e métodos avançados de fabricação de sensores químicos/bioquímicos. Utilizando equipamentos disponíveis no Centro de Componentes Semicondutores da UNICAMP, foram
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Pacheco-Sánchez, Aníbal Uriel. "Determination of key device parameters for short- and long-channel Schottky-type carbon nanotube field-effect transistors." TUD Press, 2018. https://tud.qucosa.de/id/qucosa%3A38272.

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The Schottky barrier, contact resistance and carrier mobility in carbon nanotube (CNT) field-effect transistors (FETs) are discussed in detail in this thesis. Novel extraction methods and definitions are proposed for these parameters. A technology comparison with other emerging transistor technologies and a performance projection study are also presented. A Schottky barrier height extraction method for CNTFETs considering one-dimensional (1D) conditions is developed. The methodology is applied to simulation and experimental data of CNTFETs feasible for manufacturing. Y-function-based methods (
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Books on the topic "CNTFET's"

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Singh, Amandeep, Balwinder Raj, and Mamta Khosla. Major Applications of Carbon Nanotube Field-Effect Transistors (CNTFET). IGI Global, 2019.

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Singh, Amandeep, Balwinder Raj, and Mamta Khosla. Major Applications of Carbon Nanotube Field-Effect Transistors (CNTFET). IGI Global, 2019.

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Singh, Amandeep, Balwinder Raj, and Mamta Khosla. Major Applications of Carbon Nanotube Field-Effect Transistors (CNTFET). IGI Global, 2020.

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Singh, Amandeep, Balwinder Raj, and Mamta Khosla. Major Applications of Carbon Nanotube Field-Effect Transistors (CNTFET). IGI Global, 2019.

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Singh, Amandeep, Balwinder Raj, and Mamta Khosla. Major Applications of Carbon Nanotube Field-Effect Transistors (CNTFET). IGI Global, 2019.

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Book chapters on the topic "CNTFET's"

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Tomar, Shubham, and Rutu Parekh. "Phase Frequency Detector Using CNTFET." In Sustainable Technology and Advanced Computing in Electrical Engineering. Springer Nature Singapore, 2022. http://dx.doi.org/10.1007/978-981-19-4364-5_62.

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Chen, Changxin, and Yafei Zhang. "Nanowelded Multichannel Carbon-Nanotube Field-Effect Transistors (MC-CNTFETs)." In Nanowelded Carbon Nanotubes. Springer Berlin Heidelberg, 2009. http://dx.doi.org/10.1007/978-3-642-01499-4_5.

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Sridharan, K., B. Srinivasu, and Vikramkumar Pudi. "Basics of CNTFET and Ternary Logic." In Carbon Nanostructures. Springer International Publishing, 2020. http://dx.doi.org/10.1007/978-3-030-50699-5_2.

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Sharma, Abhinav, Adarsh Kumar, and Suresh C. Sharma. "Effect of Process Parameters on CNTFET." In Lecture Notes in Mechanical Engineering. Springer Nature Singapore, 2022. http://dx.doi.org/10.1007/978-981-16-9523-0_44.

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S., Rajendra Prasad, B. K. Madhavi, and K. Lal Kishore. "Low Leakage-Power SRAM Cell Design Using CNTFETs at 32nm Technology." In Lecture Notes of the Institute for Computer Sciences, Social Informatics and Telecommunications Engineering. Springer Berlin Heidelberg, 2012. http://dx.doi.org/10.1007/978-3-642-35615-5_24.

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Sridharan, K., B. Srinivasu, and Vikramkumar Pudi. "CNTFET-Based Circuits for Basic Logic Elements." In Carbon Nanostructures. Springer International Publishing, 2020. http://dx.doi.org/10.1007/978-3-030-50699-5_3.

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Sridharan, K., B. Srinivasu, and Vikramkumar Pudi. "CNTFET-Based Design of a Ternary Multiplier." In Carbon Nanostructures. Springer International Publishing, 2020. http://dx.doi.org/10.1007/978-3-030-50699-5_6.

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Bala, Shashi, and Mamta Khosla. "Analysis of CNTFET for SRAM Cell Design." In Nanoscale Devices. CRC Press, 2018. http://dx.doi.org/10.1201/9781315163116-10.

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Yasir, Mohd, and Naushad Alam. "CNTFET-Based Universal Filter Using DO-CCII." In Lecture Notes in Electrical Engineering. Springer Nature Singapore, 2023. http://dx.doi.org/10.1007/978-981-99-0055-8_5.

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Prasad, Vikash, and Debaprasad Das. "Design of Ternary Content-Addressable Memory Using CNTFET." In Advances in Intelligent Systems and Computing. Springer Singapore, 2020. http://dx.doi.org/10.1007/978-981-15-7834-2_80.

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Conference papers on the topic "CNTFET's"

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Musala, Sarada, P. Sai Krishna Reddy, Gudivada Apurupa, et al. "Approximate Full Adders Design for Energy Efficiency using CNTFETs." In 2024 International Conference on Applied Electronics (AE). IEEE, 2024. http://dx.doi.org/10.1109/ae61743.2024.10710233.

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Sreekanth, D. Madhu, S. Rambabu, V. Sankarnath, and S. Mohammad Eliyas. "FS-GDI Technology-Based High-Performance Adder using CNTFETs." In 2024 IEEE 2nd International Conference on Innovations in High Speed Communication and Signal Processing (IHCSP). IEEE, 2024. https://doi.org/10.1109/ihcsp63227.2024.10959770.

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Zhan, Rui, Bin Zhou, Zilin Teng, Yiheng Xue, Panpan Zhang, and Jianhua Jiang. "A Physics-Based Compact Model for Ambipolar Schottky-Barrier CNTFETs." In 2025 9th IEEE Electron Devices Technology & Manufacturing Conference (EDTM). IEEE, 2025. https://doi.org/10.1109/edtm61175.2025.11041098.

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Hussain, Syed Ali, P. N. S. B. S. V. Prasad V, and Pradyut K. Sanki. "Design & Implementation of a Hybrid Multiplexer Leveraging Memristor and Cntfets." In 2024 International Conference on Microelectronics (ICM). IEEE, 2024. https://doi.org/10.1109/icm63406.2024.10815743.

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Jaiswal, Shreyanshu, Shashikant P. Patole, Laxmi Kumre, Shivam Verma, Ana Kumar, and Rohit Shrivastava. "Efficient Multiplier design using CNTFET." In 2024 IEEE 2nd International Conference on Innovations in High Speed Communication and Signal Processing (IHCSP). IEEE, 2024. https://doi.org/10.1109/ihcsp63227.2024.10959801.

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Jaber, Ramzi A., Hiba S. Bazzi, Abdallah Kassem, and Ali M. Haidar. "Proposed Two Ternary Decoders Using CNTFET." In 2024 International Conference on Microelectronics (ICM). IEEE, 2024. https://doi.org/10.1109/icm63406.2024.10815865.

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Jolly, Ekta, and Vijay Kumar Sharma. "Unbalanced Ternary Inverter Implementations in CNTFET Technology." In 2024 2nd World Conference on Communication & Computing (WCONF). IEEE, 2024. http://dx.doi.org/10.1109/wconf61366.2024.10692264.

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Nagrale, Vaibhav P., Shashikant P. Patole, Laxmi Kumre, Shivam Verma, Ana Kumar, and Deepak Patidar. "Review: Analysis of Ternary Multiplier using CNTFET." In 2024 IEEE 2nd International Conference on Innovations in High Speed Communication and Signal Processing (IHCSP). IEEE, 2024. https://doi.org/10.1109/ihcsp63227.2024.10959980.

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Сычева, Марина Евгеньевна, and Светлана Анатольевна Микаева. "CARBON TUBE-BASED NANOTRANSISTORS." In Сборник избранных статей по материалам научных конференций ГНИИ "Нацразвитие" (Санкт-Петербург, Май 2021). Crossref, 2021. http://dx.doi.org/10.37539/may191.2021.91.83.045.

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В статье рассмотрены нанотранзисторы и основные свойства нанотрубок. Представлен обзор CNTFET транзисторов и основные особенности технологии их изготовления. Полевые транзисторы из углеродных нанотрубок (CNTFET) являются перспективными наноразмерными устройствами для реализации высокопроизводительных схем с очень плотной и низкой мощностью. Проводящий канал CNTFET представляет собой углеродную нанотрубку. The article deals with nanotransistors and the main properties of nanotubes. An overview of CNTFET transistors and the main features of their manufacturing technology is presented. Carbon nan
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Сычева, Марина Евгеньевна, and Светлана Анатольевна Микаева. "DESIGN FEATURES OF NANOTRANSISTORS BASED ON CARBON TUBES." In Высокие технологии и инновации в науке: сборник избранных статей Международной научной конференции (Санкт-Петербург, Сентябрь 2021). Crossref, 2021. http://dx.doi.org/10.37539/vt193.2021.56.49.003.

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Abstract:
В статье рассмотрены основные типы CNTFET транзисторов, изготовленных на углеродных нанотрубках. Представлена классификация, особенности конструкции и основные этапы технологии изготовления CNTFET транзисторов. Полевые транзисторы из углеродных нанотрубок (CNTFET) являются перспективными наноразмерными устройствами для реализации высокопроизводительных схем с очень плотной и низкой мощностью. The article considers the main types of CNTFET transistors made on carbon nanotubes. The classification, design features and the main stages of the CNTFET transistor manufacturing technology are presented
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Reports on the topic "CNTFET's"

1

Chin, Matthew, and Stephen Kilpatrick. Differential Amplifier Circuits Based on Carbon Nanotube Field Effect Transistors (CNTFETs). Defense Technical Information Center, 2010. http://dx.doi.org/10.21236/ada517899.

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