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Dissertations / Theses on the topic 'CNTFET's'

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Published: 5 June 2025
Last updated: 2 August 2025

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1

Fediai, Artem, Dmitry A. Ryndyk, Gotthard Seifert, et al. "Towards an optimal contact metal for CNTFETs." Royal Society of Chemistry, 2016. https://tud.qucosa.de/id/qucosa%3A30077.

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Downscaling of the contact length Lc of a side-contacted carbon nanotube field-effect transistor (CNTFET) is challenging because of the rapidly increasing contact resistance as Lc falls below 20–50 nm. If in agreement with existing experimental results, theoretical work might answer the question, which metals yield the lowest CNT–metal contact resistance and what physical mechanisms govern the geometry dependence of the contact resistance. However, at the scale of 10 nm, parameter-free models of electron transport become computationally prohibitively expensive. In our work we used a dedicated
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2

Fediai, Artem, Dmitry A. Ryndyk, Gotthard Seifert, et al. "Towards an optimal contact metal for CNTFETs." Saechsische Landesbibliothek- Staats- und Universitaetsbibliothek Dresden, 2017. http://nbn-resolving.de/urn:nbn:de:bsz:14-qucosa-216371.

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Downscaling of the contact length Lc of a side-contacted carbon nanotube field-effect transistor (CNTFET) is challenging because of the rapidly increasing contact resistance as Lc falls below 20–50 nm. If in agreement with existing experimental results, theoretical work might answer the question, which metals yield the lowest CNT–metal contact resistance and what physical mechanisms govern the geometry dependence of the contact resistance. However, at the scale of 10 nm, parameter-free models of electron transport become computationally prohibitively expensive. In our work we used a dedicated
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3

Villamizar, Gallardo Raquel Amanda. "Biosensors based on carbon nanotube field effect transistors (cntfets) for detecting pathogenic microorganisms." Doctoral thesis, Universitat Rovira i Virgili, 2009. http://hdl.handle.net/10803/9037.

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Microorganisms are present in a variety of sources, including food, water, animals, environment as well as the human body. They can be harmless or harmful. The latter is also called pathogenic and their detection is extremely important due to health and safety reasons. <br/> <br/>It is well known that food contaminated with bacteria can produce a number of foodborne diseases. As a consequence, thousands of euros are invested each year in medical treatments trying to keep the population healthy. There are more than 250 known foodborne diseases. For example, outbreaks of salmonellosis have
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4

Dang, Trong Trinh. "Portes logiques à base de CNTFETs : dispersion des caractéristiques et tolérance aux défauts." Grenoble INPG, 2008. http://www.theses.fr/2008INPG0081.

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Parmi les nouveaux nano-dispositifs, les CNTFETs sont des candidats prometteurs. Mais les circuits à base de nanotubes auront une probabilité élevée de défectuosité lors de la fabrication et une assez grande dispersion des caractéristiques. Dans ce contexte, cette thèse étudie l'implantation de portes logiques élémentaires à base de CNTFETs. Une comparaison précise de plusieurs structures logiques montre les avantages de la structure complémentaire pour les applications futures. L'influence des variations paramétriques sur les caractéristiques des CNTFETs et des portes logiques complémentaires
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5

Moroguma, Alex Yuzo. "Projeto de circuitos RF em tecnologia CNTFET para padrão Bluetooth." reponame:Repositório Institucional da UnB, 2014. http://repositorio.unb.br/handle/10482/16932.

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Dissertação (mestrado)—Universidade de Brasília, Faculdade de Tecnologia, Departamento de Engenharia Elétrica, 2013.<br>Submitted by Ana Cristina Barbosa da Silva (annabds@hotmail.com) on 2014-10-31T15:36:45Z No. of bitstreams: 1 2014_AlexYuzoMoroguma.pdf: 1600794 bytes, checksum: ab86f2dd5113052e628c14e73aca6d39 (MD5)<br>Approved for entry into archive by Patrícia Nunes da Silva(patricia@bce.unb.br) on 2014-11-19T10:54:29Z (GMT) No. of bitstreams: 1 2014_AlexYuzoMoroguma.pdf: 1600794 bytes, checksum: ab86f2dd5113052e628c14e73aca6d39 (MD5)<br>Made available in DSpace on 2014-11-19T10:54:29Z (G
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6

Heitz, Jérôme. "Etude, modélisation et conception d'un multicapteur chimique à base de CNTFET." Thesis, Strasbourg, 2013. http://www.theses.fr/2013STRAD031/document.

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Depuis quelques années, les explosifs artisanaux à base de peroxyde sont fréquemment utilisés dans les actes de terrorisme. Leur simplicité de conception ne les rend pas moins inoffensifs car ils sont tout aussi puissants que ceux à base de TNT (trinitrotoluène). Au regard des enjeux majeurs de la sécurité globale et en particulier de la protection du citoyen, il devient nécessaire de bénéficier d'instruments de détection fiables. C'est dans ce cadre que s'inscrit ce travail de thèse qui vise à développer un capteur intégré, sensible et sélectif aux traces d'explosifs, notamment ceux à base de
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7

Liu, Junchen. "Architectures reconfigurables à base de CNTFET (carbon nanotube field effect transistor) double grille." Ecully, Ecole centrale de Lyon, 2008. http://www.theses.fr/2008ECDL0027.

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La poursuite de la loi de Moore nécessite l'exploration et l'utilisation de composants nouveaux pouvant compléter ou remplacer le transistor CMOS dans les systèmes sur puce dans les années à venir. Dans ce contexte, l'émergence de nanocomposants offre l'opportunité d'inventer de nouvelles structures de circuit, d'élaborer des techniques non-conventionnelles de conception et par conséquent de repenser le paradigme de conception des architectures. Le principal objectif de cette thèse est de proposer de nouvelles structures de circuits (portes logiques élémentaires et reconfigurables) exploitant
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8

HOFFA, JOEL L. "Simulation of Carbon Nanotube Based Field Effect Transistors." University of Cincinnati / OhioLINK, 2007. http://rave.ohiolink.edu/etdc/view?acc_num=ucin1179851272.

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9

Souza, Jair Fernandes de. "Desenvolvimento de materiais e métodos de fabricação de sensores químicos/bioquímicos baseados em silício e nanoestruturas de carbono (ISFET, CNTFET e GraFET) = Development of materials and methods of fabrication of chemical/biochemical sensors based on silicon and carbon nanostructures (ISFET, CNTFET and GraFET)." [s.n.], 2012. http://repositorio.unicamp.br/jspui/handle/REPOSIP/261064.

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Orientadores: Peter Jürgen Tatsch, José Alexandre Diniz<br>Tese (doutorado) - Universidade Estadual de Campinas, Faculdade de Engenharia Elétrica e de Computação<br>Made available in DSpace on 2018-08-21T00:22:30Z (GMT). No. of bitstreams: 1 Souza_JairFernandesde_D.pdf: 13128989 bytes, checksum: 25325c1093f208d379ae77adc08c90ff (MD5) Previous issue date: 2012<br>Resumo: Este trabalho teve como objetivo o desenvolvimento de materiais e métodos avançados de fabricação de sensores químicos/bioquímicos. Utilizando equipamentos disponíveis no Centro de Componentes Semicondutores da UNICAMP, foram
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10

Pacheco-Sánchez, Aníbal Uriel. "Determination of key device parameters for short- and long-channel Schottky-type carbon nanotube field-effect transistors." TUD Press, 2018. https://tud.qucosa.de/id/qucosa%3A38272.

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The Schottky barrier, contact resistance and carrier mobility in carbon nanotube (CNT) field-effect transistors (FETs) are discussed in detail in this thesis. Novel extraction methods and definitions are proposed for these parameters. A technology comparison with other emerging transistor technologies and a performance projection study are also presented. A Schottky barrier height extraction method for CNTFETs considering one-dimensional (1D) conditions is developed. The methodology is applied to simulation and experimental data of CNTFETs feasible for manufacturing. Y-function-based methods (
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11

Cazin, d'Honincthun Hugues. "Des propriétés de transport des nanotubes de carbone au transistor : étude par simulation Monte Carlo." Paris 11, 2008. http://www.theses.fr/2008PA112014.

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Pour continuer la course à la miniaturisation des composants microélectronique, les nanotubes de carbone (NTC) se présentent comme une alternative potentielle au Silicium en tant que canal de conduction dans les transistors à effet de champ (CNTFET). Afin de comprendre le fonctionnement du CNTFET, ce travail présente un ensemble de simulations physiques de type Monte-Carlo permettant une description fine du transport de charges. Ce travail est basé sur le simulateur particulaire MONACO qui a été adapté aux propriétés spécifiques des NTC. Il commence par une étude détaillée du transport électro
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12

Baldo, Salvatore. "Development and characterization of nanocarbon-based devices for sensing applications." Doctoral thesis, Università di Catania, 2017. http://hdl.handle.net/10761/3750.

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The subject of this PhD thesis has been the development and characterization of nanocarbon-based sensors, with particular attention to the use of easy and cheap methodologies and processes that are required for future large scale production (dielectrophoresis, lift-off, etc..). In the first part of the thesis the development of Carbon nanotubes (CNTs)-based devices for biosensing applications is reported and the tests on protein detection are shown. In the second part the development of Graphene oxide (GO)-based devices is shown and the electrical behavior of the devices is investigated in dif
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13

Liao, Si-Yu. "Caractérisation électrique et électro-optique de transistor à base de nanotube de carbone en vue de leur modélisation compacte." Phd thesis, Université Sciences et Technologies - Bordeaux I, 2011. http://tel.archives-ouvertes.fr/tel-00592479.

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Afin de permettre de développer un modèle de mémoire non-volatile basée sur le transistor à nanotube de carbone à commande optique qui est utilisée dans des circuits électroniques neuromorphiques, il est nécessaire de comprendre les physiques électroniques et optoélectroniques des nanotubes de carbone, en particulier l'origine de l'effet mémoire que présente ces transistors. C'est dans ce contexte général que cette thèse s'intègre. Le travail est mené sur trois plans : * Caractériser électriquement et optoélectroniquement des structures de test des CNTFETs et des OG-CNTFETs. * Développer un mo
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14

Ryu, Hyeyeon. "Integrated Circuits Based on Individual Single-Walled Carbon Nanotube Field-Effect Transistors." Doctoral thesis, Universitätsbibliothek Chemnitz, 2012. http://nbn-resolving.de/urn:nbn:de:bsz:ch1-qucosa-98220.

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This thesis investigates the fabrication and integration of nanoscale field-effect transistors based on individual semiconducting carbon nanotubes. Such devices hold great potential for integrated circuits with large integration densities that can be manufactured on glass or flexible plastic substrates. A process to fabricate arrays of individually addressable carbon-nanotube transistors has been developed, and the electrical characteristics of a large number of transistors has been measured and analyzed. A low-temperature-processed gate dielectric with a thickness of about 6 nm has been devel
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15

Liao, Si-yu. "Caractérisation électrique et électro-optique de transistor à base de nanotube de carbone en vue de leur modélisation compacte." Thesis, Bordeaux 1, 2011. http://www.theses.fr/2011BOR14254/document.

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Afin de permettre de développer un modèle de mémoire non-volatile basée sur le transistor à nanotube de carbone à commande optique qui est utilisée dans des circuits électroniques neuromorphiques, il est nécessaire de comprendre les physiques électroniques et optoélectroniques des nanotubes de carbone, en particulier l’origine de l'effet mémoire que présente ces transistors. C’est dans ce contexte général que cette thèse s'intègre. Le travail est mené sur trois plans :• Caractériser électriquement et optoélectroniquement des structures de test des CNTFETs et des OG-CNTFETs.• Développer un modè
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16

Fuchs, Florian. "Feldeffekttransistoren auf Basis von Kohlenstoffnanoröhrchen: Vergleich zwischen atomistischer Simulation und Bauelementesimulation." Master's thesis, Universitätsbibliothek Chemnitz, 2014. http://nbn-resolving.de/urn:nbn:de:bsz:ch1-qucosa-157276.

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Kohlenstoffnanoröhrchen (CNTs) sind vielversprechende Kandidaten für neuartige nanoelektronische Bauelemente, wie zum Beispiel Transistoren für Hochfrequenzanwendungen. Simulationen CNT-basierter Bauelemente sind dabei unverzichtbar, um deren Anwendungspotential und das Verhalten in Schaltungen zu untersuchen. Die vorliegende Arbeit konzentriert sich auf einen Methodenvergleich zwischen einem atomistischen Ansatz basierend auf dem Nichtgleichgewichts-Green-Funktionen-Formalismus und einem Modell zur numerischen Bauelementesimulation, welches auf der Schrödinger-Gleichung in effektiver-Massen-N
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17

Lai, Chih-Yen, and 賴志彥. "Electrical Properties of Insitu-Growth CNTFET and Spin-Coating CNTFET." Thesis, 2005. http://ndltd.ncl.edu.tw/handle/59132324612657061448.

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18

Pathak, Sandeep. "Size Dependence of Static and Dynamic Properties of Nanobars and Nanotubes." Thesis, 2006. https://etd.iisc.ac.in/handle/2005/3097.

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This thesis aims at investigating size dependence of properties of nanostructures from the point of view of a general scaling theory that smoothly connects properties of the bulk to that of nanostructures. Two different examples of a ``static'' and a ``dynamic'' property are considered in this study. The first example studied is of size dependence of coefficient of thermal expansion (CTE) which a static property of nanostructures. The CTE of nanobars and nanoslabs is studied using equilibrium molecular dynamics and dynamical matrix formulation in an electrically insulating medium. It is found
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19

Pathak, Sandeep. "Size Dependence of Static and Dynamic Properties of Nanobars and Nanotubes." Thesis, 2006. http://hdl.handle.net/2005/3097.

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This thesis aims at investigating size dependence of properties of nanostructures from the point of view of a general scaling theory that smoothly connects properties of the bulk to that of nanostructures. Two different examples of a ``static'' and a ``dynamic'' property are considered in this study. The first example studied is of size dependence of coefficient of thermal expansion (CTE) which a static property of nanostructures. The CTE of nanobars and nanoslabs is studied using equilibrium molecular dynamics and dynamical matrix formulation in an electrically insulating medium. It is found
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20

Dang, T. "Portes logiques à base de CNTFETs – dispersion des caractéristiques et tolérance aux défauts." Phd thesis, 2008. http://tel.archives-ouvertes.fr/tel-00326225.

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Parmi les nouveaux nano-dispositifs, les CNTFETs sont des candidats prometteurs. Mais les circuits à base de nanotubes auront une probabilité élevée de défectuosité lors de la fabrication et une assez grande dispersion des caractéristiques. Dans ce contexte, cette thèse étudie l'implantation de portes logiques élémentaires à base de CNTFETs. Une comparaison précise de plusieurs structures logiques montre les avantages de la structure complémentaire pour les applications futures. L'influence des variations paramétriques sur les caractéristiques des CNTFETs et des portes logiques complémentaires
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21

Shiue, Sheng-ming, and 薛聖銘. "A Study on the Hysteresis effect of CNTFET." Thesis, 2005. http://ndltd.ncl.edu.tw/handle/57072550662648558840.

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碩士<br>國立交通大學<br>電子工程系所<br>93<br>Since carbon nanotube field effect transistor (CNTFET) was demonstrated in 1998, electrical properties of CNTFETs such as mobility, carrier transportation, cut-off frequency, etc., were investigated widely by many researchers. Among these properties, the hysteresis effect of CNTFETs is one of the key points because it affects the device stability. On the other hand, the hysteresis effect reveals the possibility for sensor or memory applications. Since 2002, researchers have two perspectives on the mechanism which causes the hysteresis effect. One is the water mo
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22

ZHAN, JIA-HAN, and 詹家翰. "Design of Content-Addressable Memories Using CNTFET Devices." Thesis, 2017. http://ndltd.ncl.edu.tw/handle/wmgtm9.

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碩士<br>國立彰化師範大學<br>電子工程學系<br>105<br>Content-addressable memory (CAM) compares input search data in parallel against a table of stored data, and then returns the address of the matching data. CAMs can be used in a wide variety of applications which requires high-speed parallel search. As the feature size continues to shrink and the corresponding transistor density increases, the planar MOSFET suffers from the increasing subthreshold and gate leakage currents. Carbon nanotube transistors (CNTFETs) are promising devices to overcome the shortcomings of the traditional planar MOSFETs because CNTFETs
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23

Hsu, Fong-Bin, and 許峰斌. "CNTFET Biosensor Embedded Mask, an Application to Detect Influenza Virus." Thesis, 2013. http://ndltd.ncl.edu.tw/handle/rs9d9f.

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碩士<br>國立臺北科技大學<br>機電整合研究所<br>101<br>Influenza, commonly known as flu, is a highly contagious disease. Evidence supports the transmission of the disease is by direct or indirect contact or by droplet and airborne transmission. Diagnose of influenza infection is made by isolating the virus or detecting it by antigen detection or nucleic acid testing methods. Our innovation is to apply carbon nanotube coated with H1N1 aptamer as a biosensor component and embed it into mask for detection of the influenza virus. Before achieving this goal, we firstly use our biosensor to detect H1N1 contained dropl
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24

Lin, Chan-Ching, and 林展慶. "Electrical Characterization and Processes of CNTFET formed by Spin-Coating CNT." Thesis, 2006. http://ndltd.ncl.edu.tw/handle/75079104145299987511.

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25

Fu, Chong-Hao, and 傅崇豪. "Effects of bending and electron irradiation on electrical characteristics of CNTFET." Thesis, 2007. http://ndltd.ncl.edu.tw/handle/42735612370819569050.

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26

Chen, Yao-Lun, and 陳要綸. "Design of CNTFET Content-Addressable Memories Using Ternary Inverters and Precharge Controllers." Thesis, 2019. http://ndltd.ncl.edu.tw/handle/99yh9m.

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碩士<br>國立彰化師範大學<br>電子工程學系<br>107<br>Content-Addressable Memory (CAM) is a special kind of memory that allows parallel search of data, and it is widely used for pattern recognition, data compression, and network address translation. In recent years, because the characteristic size of the transistor continues to shrink and the corresponding transistor density increases, the conventional planer MOSFET may have problems such as increasing subthreshold and gate leakage currents. This thesis uses a carbon nanotube transistor (CNTFET) to replace the traditional MOSFET, to effectively overcome the shor
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27

Lin, Tsung-Hsuan, and 林琮軒. "CNTFET Biosensor Embedded in the Mask Applied to the Detection of H1N1 Virus." Thesis, 2011. http://ndltd.ncl.edu.tw/handle/aq923q.

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碩士<br>國立臺北科技大學<br>機電整合研究所<br>99<br>As technology advances and the trend of people being more aware of their health becomes more popular, applying high-end technology on biomedical research is the mainstream of scientific research now, with the outlook of a full-dimensional development in the field of biotechnology. Biochip is already acknowledged as revolutionary development in recent biotechnology, as it brings exponential growth in biomedicine, chemistry and environment related fields. The main features of this biosensor is: specificity of analyzed result, high sensitivity, fast analyzing s
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28

Lo, Chien-Wei, and 羅健瑋. "Improved electrical performance of CNTFET by Controlling the Counts of High-Density Horizontally Aligned Array of smei-SWCNTs." Thesis, 2009. http://ndltd.ncl.edu.tw/handle/85814985995746529018.

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29

Lorkowski, Florian. "Implementierung des Drift-Diffusions-Modells zur Berechnung des elektronischen Transportes durch Kohlenstoffnanoröhrchen." 2018. https://monarch.qucosa.de/id/qucosa%3A21313.

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Diese Arbeit beschäftigt sich mit der Entwicklung und Implementierung eines Algorithmus zur Berechnung des diffusiven elektronischen Transportes durch Kohlenstoffnanoröhrchen-Feldeffekttransistoren (CNTFETs) unter Verwendung des Drift-Diffusions-Modells. Als Grundlage dient ein bekannter, eindimensionaler Algorithmus für klassische Halbleiter, durch welchen das elektrostatische Potential im stationären Zustand berechnet werden kann. Dieser Algorithmus wird erweitert, um die geometrischen und physikalischen Besonderheiten von CNTFETs, insbesondere die Quasi-Eindimensionalität, zu berücksichtige
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30

Yasasvi, Raghavendra G. P. "Towards Logic Circuit Applications Using Solution Processed CNTs." Thesis, 2018. https://etd.iisc.ac.in/handle/2005/5271.

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With Silicon transistor technology reaching its practical limits, e orts to replace Si with new materials with better electronic transport properties have gained considerable at- tention. Single-walled carbon nanotubes (CNTs) are one of the promising materials for transistors operating beyond 10 nm node technology because of their excellent electronic, thermal and optical properties. There have been many reports on CNTs for various ap- plications including logic circuits, sensors etc. However, field effect transistors (FET) made of CNTs generally exhibit p-type behaviour. In order to re
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31

Roscher, Willi. "Passivierung von Kohlenstoffnanoröhren-Feldeffekttransistoren mit Hexamethyldisiloxan." 2016. https://monarch.qucosa.de/id/qucosa%3A34365.

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Kohlenstoffnanoröhren (engl. carbon nanotubes) bieten hervorragende elektrische Eigenschaften für neuartige Feldeffekttransistoren (engl. field-effect transistors) auf engstem Raum. Eine Möglichkeit zur Verbesserung der elektrischen Eigenschaften bietet eine geeignete Passivierung mit Hexamethyldisiloxan. In dieser Arbeit werden eine Flüssig- und eine Gasphasenbehandlung von Siliziumoxid-Oberflächen mit Hexamethyldisiloxan untersucht. Die Oberflächen werden dabei in wenigen Minuten hydrophobiert. Nach längeren Behandlungszeiten werden Wasserkontaktwinkel von 95° erreicht, die auch noch nach me
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Tittmann-Otto, Jana. "Improvement of carbon nanotube-based field-effect transistors by cleaning and passivation." 2019. https://monarch.qucosa.de/id/qucosa%3A72449.

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Ever since their discovery in 1991, carbon nanotubes are of great interest to the scientific community due to their outstanding optical, mechanical and electrical properties. Considering their impressive properties, as for instance the high current carrying capability and the possibility of ballistic charge transport, carbon nanotubes are a desired channel material in field-effect transistors, especially with respect to high frequency communication electronics. Thus, many scientific studies on CNT-based field-effect transistors have been published so far. But despite the successful verificatio
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