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Journal articles on the topic 'CNTFET's'

Author: Grafiati

Published: 5 June 2025

Last updated: 2 August 2025

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1

Neetu, Sardana, and L.K.Ragha Professor. "CARBON NANO TUBE FIELD EFFECT TRANSISTOR:A REVIEW." INTERNATIONAL JOURNAL OF ENGINEERING SCIENCES & RESEARCH TECHNOLOGY 5, no. 4 (2016): 861–68. https://doi.org/10.5281/zenodo.50424.

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Carbon Nano Tube Field Effect Transistor (CNTFET) has various extraordinary electrical and mechanical properties and due to this CNTFET is turning out to be the forefront material for future electronics. In this paper, the review of CNTFETs is presented. MOSFET technology has limited scope  for further enhancement. With a motivation to find alternatives, we explore the domain of CNTFETs. The structure, operation and the various performance parameters have been discussed. The effect of threshold voltage, temperature, channel length,delay and power consumption for both CNTFETs and MOSFET de

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2

Tripathi, Shailendra Kumar, Sarfraz Hussain, Raj Kumar, and Sourabh Sahu. "Design and Analysis of Digitally Tunable Transconductance Amplifier (DTTA) Using CNTFETs." Scientific World Journal 2024 (May 23, 2024): 1–6. http://dx.doi.org/10.1155/2024/2003437.

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Carbon nanotube-FETs (CNTFETs) have become a potential challenger because of their exceptional electrical properties and compatibility with conventional CMOS technology. The design and study of digitally tunable transconductance amplifiers (DTTAs) using CNTFETs are the main topics of this work. By utilizing the special characteristics of CNTFETs, the suggested DTTA design makes transconductance tunable, providing a versatile method of adjusting amplifier settings without requiring modifications to the hardware architecture. This study provides a complete description of the CNTFET modeling tech

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3

Cho, Geunho. "A Study on the Design Method of Hybrid MOSFET-CNTFET Based SRAM – A Secondary Publication." Journal of Electronic Research and Application 8, no. 1 (2024): 106–12. http://dx.doi.org/10.26689/jera.v8i1.6115.

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More than 10,000 carbon nanotube field-effect transistors (CNTFETs) have been successfully integratedinto one semiconductor chip using conventional semiconductor design procedures and manufacturing processes. Thesetransistors offer advantages such as high carrier mobility, large saturation velocity, low intrinsic capacitance, flexibility, andtransparency. The three-dimensional multilayer structure of the CNTFET semiconductor chip, along with ongoing researchin CNTFET manufacturing processes, increases the potential for creating a hybrid MOSFET-CNTFET semiconductorchip. This chip combines conve

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4

Kimbrough, Joevonte, Lauren Williams, Qunying Yuan, and Zhigang Xiao. "Dielectrophoresis-Based Positioning of Carbon Nanotubes for Wafer-Scale Fabrication of Carbon Nanotube Devices." Micromachines 12, no. 1 (2020): 12. http://dx.doi.org/10.3390/mi12010012.

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In this paper, we report the wafer-scale fabrication of carbon nanotube field-effect transistors (CNTFETs) with the dielectrophoresis (DEP) method. Semiconducting carbon nanotubes (CNTs) were positioned as the active channel material in the fabrication of carbon nanotube field-effect transistors (CNTFETs) with dielectrophoresis (DEP). The drain-source current (IDS) was measured as a function of the drain-source voltage (VDS) and gate-source voltage (VGS) from each CNTFET on the fabricated wafer. The IDS on/off ratio was derived for each CNTFET. It was found that 87% of the fabricated CNTFETs w

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5

GUO, JING, SIYURANGA O. KOSWATTA, NEOPHYTOS NEOPHYTOU, and MARK LUNDSTROM. "CARBON NANOTUBE FIELD-EFFECT TRANSISTORS." International Journal of High Speed Electronics and Systems 16, no. 04 (2006): 897–912. http://dx.doi.org/10.1142/s0129156406004077.

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This paper discusses the device physics of carbon nanotube field-effect transistors (CNTFETs). After reviewing the status of device technology, we use results of our numerical simulations to discuss the physics of CNTFETs emphasizing the similarities and differences with traditional FETs. The discussion shows that our understanding of CNTFET device physics has matured to the point where experiments can be explained and device designs optimized. The paper concludes with some thoughts on challenges and opportunities for CNTFET electronics.

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6

Cho, Gookbin, Eva Grinenval, Jean-Christophe P. Gabriel, and Bérengère Lebental. "Intense pH Sensitivity Modulation in Carbon Nanotube-Based Field-Effect Transistor by Non-Covalent Polyfluorene Functionalization." Nanomaterials 13, no. 7 (2023): 1157. http://dx.doi.org/10.3390/nano13071157.

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We compare the pH sensing performance of non-functionalized carbon nanotubes (CNT) field-effect transistors (p-CNTFET) and CNTFET functionalized with a conjugated polyfluorene polymer (labeled FF-UR) bearing urea-based moieties (f-CNTFET). The devices are electrolyte-gated, PMMA-passivated, 5 µm-channel FETs with unsorted, inkjet-printed single-walled CNT. In phosphate (PBS) and borate (BBS) buffer solutions, the p-CNTFETs exhibit a p-type operation while f-CNTFETs exhibit p-type behavior in BBS and ambipolarity in PBS. The sensitivity to pH is evaluated by measuring the drain current at a gat

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7

Park, Junsung, Xueqing Liu, Trond Ytterdal, and Michael Shur. "Carbon Nanotube Detectors and Spectrometers for the Terahertz Range." Crystals 10, no. 7 (2020): 601. http://dx.doi.org/10.3390/cryst10070601.

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We present the compact unified charge control model (UCCM) for carbon nanotube field-effect transistors (CNTFETs) to enable the accurate simulation of the DC characteristics and plasmonic terahertz (THz) response in the CNTFETs. Accounting for the ambipolar nature of the carrier transport (n-type and p-type conductivity at positive and negative gate biases, respectively), we use n-type and p-type CNTFET non-linear equivalent circuits connected in parallel, representing the ambipolar conduction in the CNTFETs. This allows us to present a realistic non-linear model that is valid across the entir

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8

Crippa, Paolo, Giorgio Biagetti, Claudio Turchetti, et al. "A High-Gain CNTFET-Based LNA Developed Using a Compact Design-Oriented Device Model." Electronics 10, no. 22 (2021): 2835. http://dx.doi.org/10.3390/electronics10222835.

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Recently, carbon nanotube field-effect transistors (CNTFETs) have attracted wide attention as promising candidates for components in the next generation of electronic devices. In particular CNTFET-based RF devices and circuits show superior performance to those built with silicon FETs since they are able to obtain higher power-gain and cut-off frequency at lower power dissipation. The aim of this paper is to present a compact, design-oriented model of CNTFETs that is able to ease the development of a complete amplifier. As a case study, the detailed design of a high-gain CNTFET-based broadband

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9

Ding, Hongyu, Jiangwei Cui, Qiwen Zheng, et al. "Effect of Trapped Charge Induced by Total Ionizing Dose Radiation on the Top-Gate Carbon Nanotube Field Effect Transistors." Electronics 12, no. 4 (2023): 1000. http://dx.doi.org/10.3390/electronics12041000.

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The excellent performance and radiation-hardness potential of carbon nanotube (CNT) field effect transistors (CNTFETs) have attracted wide attention. However, top-gate structure CNTFETs, which are often used to make high-performance devices, have not been studied enough. In this paper, the total ionizing dose (TID) effect of the top-gate structure CNTFETs and the influence of the substrate on top-gate during irradiation are studied. The parameter degradation caused by the irradiation- and radiation-damage mechanisms of the top-gate P-type CNTFET were obtained by performing a Co-60 γ-ray irradi

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10

Kasthuri, Bha J.K., Prasath T.V. Sudharshana, M. V. T. Ashray, and Ayush Nautiyal. "Design of Low Power Ambipolar CNTFET-Based Digital Adders." International Journal of Microsystems and IoT 2, no. 12 (2024): 1422–29. https://doi.org/10.5281/zenodo.15089726.

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This device having an intrinsic channel and Schottky barrier contacts have been taken into consideration because of the ongoing downscaling of MOSFETs. These transistors are ambipolar, which means that depending on the biasing circumstances, they can operate as either n-type or p-type devices. Due to their unique property of controlled polarity, Carbon Nanotube Field Effect Transistors (CNTFETs) are widely regarded as a possible candidate for future nanoscale transistor devices. As a result, ambipolarity gates based on CNTFETs require far fewer transistors in their circuit architecture than un

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11

Zhang, Ji, Sheng Chang, Hao Wang, Jin He, and Qi Jun Huang. "Artificial Neural Network Based CNTFETs Modeling." Applied Mechanics and Materials 667 (October 2014): 390–95. http://dx.doi.org/10.4028/www.scientific.net/amm.667.390.

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Based on artificial neural network (ANN), a new method of modeling carbon nanotube field effect transistors (CNTFETs) is developed. This paper presents two ANN CNTFET models, including P-type CNTFET (PCNTFET) and N-type CNTFET (NCNTFET). In order to describe the devices more accurately, a segmentation voltage of the voltage between gate and source is defined for each type of CNTFET to segment the workspace of CNTFET. With the smooth connection by a quasi-Fermi function for, the two segmented networks of CNTFET are integrated into a whole device model and implemented by Verilog-A. To validate t

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12

Y., Mallikarjuna Rao. "Analysis of Ternary logic arithmetic circuits." Research and Applications: Emerging Technologies 5, no. 2 (2023): 7–13. https://doi.org/10.5281/zenodo.8012935.

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<em>Complementary metal oxide semiconductor (CMOS) technology has facing a problems when down scaling a device. However, CMOS have the limitations in lower technology,</em> <em>to avoid the drawbacks of CMOS researchers have introduced the carbon nan-tube FETS (CNTFETs).</em><em> CNTFETs have the flexibility to</em> <em>change</em> <em>the</em> <em>threshold</em> <em>voltage</em> <em>of the device </em><em>by</em> <em>changing the device</em> <em>dimensions </em>   <em>such as length and width. Hence this property of the CNTFET is useful for designing of multi-valued logic</em>

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13

Zahoor, Furqan, Fawnizu Azmadi Hussin, Farooq Ahmad Khanday, Mohamad Radzi Ahmad, and Illani Mohd Nawi. "Ternary Arithmetic Logic Unit Design Utilizing Carbon Nanotube Field Effect Transistor (CNTFET) and Resistive Random Access Memory (RRAM)." Micromachines 12, no. 11 (2021): 1288. http://dx.doi.org/10.3390/mi12111288.

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Due to the difficulties associated with scaling of silicon transistors, various technologies beyond binary logic processing are actively being investigated. Ternary logic circuit implementation with carbon nanotube field effect transistors (CNTFETs) and resistive random access memory (RRAM) integration is considered as a possible technology option. CNTFETs are currently being preferred for implementing ternary circuits due to their desirable multiple threshold voltage and geometry-dependent properties, whereas the RRAM is used due to its multilevel cell capability which enables storage of mult

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14

Prasad, Vikash, and Debaprasad Das. "A Review on MOSFET-Like CNTFETs." Science & Technology Journal 4, no. 2 (2016): 124–29. http://dx.doi.org/10.22232/stj.2016.04.02.06.

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Carbon Nanotube Field Effect Transistor (CNTFET) is one of the promising devices for future nanoscale technologies. In this paper, we have studied the drain characteristics of MOSFET-like CNTFETs for different device parameters like, channel length, diameter of CNT, and number of tubes. It is shown that these device parameters can be used to make important design decisions while designing nanoelectronic circuits. A buffer and ring oscillator circuits are designed using the MOSFET-like CNTFET and propagation delay, power, and power-delay-product (PDP) values are calculated and compared with the

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15

Hamieh, S. "Improving the RF Performance of Carbon Nanotube Field Effect Transistor." Journal of Nanomaterials 2012 (2012): 1–7. http://dx.doi.org/10.1155/2012/724121.

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Compact model of single-walled semiconducting carbon nanotube field-effect transistors (CNTFETs) implementing the calculation of energy conduction subband minima under VHDLAMS simulator is used to explore the high-frequency performance potential of CNTFET. The cutoff frequency expected for a MOSFET-like CNTFET is well below the performance limit, due to the large parasitic capacitance between electrodes. We show that using an array of parallel nanotubes as the transistor channel combined in a finger geometry to produce a single transistor significantly reduces the parasitic capacitance per tub

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16

Zhou, Bin, Rui Zhan, Zilin Teng, et al. "Analytical Capacitance Model for Carbon Nanotube Field-Effect Transistors Including Interface-Trap Effects." Nanomaterials 15, no. 8 (2025): 604. https://doi.org/10.3390/nano15080604.

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The creation of carbon nanotubes has sparked a paradigm shift in the post-silicon era because of their decent electronic and optical properties. However, interface traps pose an obstacle in the realization of high-performance carbon nanotube field-effect transistors (CNTFETs). Herein, we systematically investigate the C−V characteristics of CNTFETs and propose a small-signal equivalent model to decouple the effects arising from interface traps. Moreover, intrinsic parameters associated with interface traps can be feasibly extracted using this approach. An analytical capacitance model is furthe

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17

., Gudala Konica, and Sreenivasulu Mamilla . "Design and Analysis of CMOS and CNTFET based Ternary Operators for Scrambling." Volume 4,Issue 5,2018 4, no. 5 (2019): 575–79. http://dx.doi.org/10.30799/jnst.187.18040530.

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As silicon technology scales down, it is a dominant choice to have high-performance digital circuits. As researchers investigated for high-performance digital circuits for future generations, Carbon Nanotube Field Effect Transistors (CNTFETs) is considered as the most promising technology due to their excellent current driving capability and proved to be an alternative to conventional CMOS technology. A CNTFET based energy efficient ternary operators are proposed for scrambling applications. The transistor-level implementations of operators namely Scrambling Operator1 (SOP1), Scrambling Operat

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18

SundaramK, Mohana, P. Prakash, S. Angalaeswari, T. Deepa, L. Natrayan, and Prabhu Paramasivam. "Influence of Process Parameter on Carbon Nanotube Field Effect Transistor Using Response Surface Methodology." Journal of Nanomaterials 2021 (December 15, 2021): 1–9. http://dx.doi.org/10.1155/2021/7739359.

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Carbon nanotube field-effect transistor (CNTFET) is a good option to replace silicon for low power consumption application. Recent research shows that CN-FET thermal and electrical properties alter with length, diameter, and gate parameters. Optimization of CNTFET design parameters helps control some of the factors. Double gate and cylindrical gate layouts are introduced to overcome these facts. Carbon nanotubes have an intercapacitance between them that increases as their diameter increases. Total capacitance and inductance of CNTFETs increase with nanotube count. In order to reduce the volta

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19

Dudina, Alexandra, Urs Frey, and Andreas Hierlemann. "Carbon-Nanotube-Based Monolithic CMOS Platform for Electrochemical Detection of Neurotransmitter Glutamate." Sensors 19, no. 14 (2019): 3080. http://dx.doi.org/10.3390/s19143080.

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We present a monolithic biosensor platform, based on carbon-nanotube field-effect transistors (CNTFETs), for the detection of the neurotransmitter glutamate. We used an array of 9′216 CNTFET devices with 96 integrated readout and amplification channels that was realized in complementary metal-oxide semiconductor technology (CMOS). The detection principle is based on amperometry, where electrochemically active hydrogen peroxide, a product of the enzymatic reaction of the target analyte and an enzyme that was covalently bonded to the CNTFET, modulated the conductance of the CNTFET-based sensors.

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20

Marani, R., and A. G. Perri. "Study of CNTFETs as Memory Devices." ECS Journal of Solid State Science and Technology 11, no. 3 (2022): 031001. http://dx.doi.org/10.1149/2162-8777/ac5846.

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In this paper we propose a procedure for the study of CNTFETs as memory devices. In particular we analyze the design of a 6-T SRAM, in order to evaluate the writing and reading times, in single and double supplies, the static noise margin, the static power consumption and the power-delay product. For these goals, we use a CNTFET model, already proposed by us. Then we apply the same procedure using the Stanford model in order to compare the obtained results. At last we apply the proposed analysis for the design of a 6-T SRAM in CMOS technology, showing the improvements obtained with CNTFET tech

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21

Gelao, Gennaro, Roberto Marani, and Anna Gina Perri. "Analysis and design of current mode logic based on CNTFET." AIMS Materials Science 10, no. 6 (2023): 965–80. http://dx.doi.org/10.3934/matersci.2023052.

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<abstract> <p>In this letter we present a current mode gate based on differential pair as an application of carbon nanotube field effect transistors (CNTFETs). The proposed circuit has two output logic gates: one is NAND, and the other is AND. To simplify the circuit realization we use all CNTFETs of the same type, all with the same lengths and carbon nanotube symmetry indices (n, m). Complex circuits could be obtained in current mode replicating the differential pair CNTFET along the current path. The proposed procedure allows simulation of transfer characteristics from voltage in

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22

Dinh, Hien Sy, Tuan Tran Anh Thi, and Luong Thi Nguyen. "SIMULATING CHARACTERISTICS OF CARBON NANOTUBE FIELD- EFFECT TRANSISTOR (CNTFET)." Science and Technology Development Journal 13, no. 2 (2010): 15–27. http://dx.doi.org/10.32508/stdj.v13i2.2123.

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We provide a model of coaxial CNTFET, using single wall nanotube. These devices would exhibit wrap-around gates that maximize capacitive coupling between the gate electrode and the nanotube channel. The results of simulations of I-V characteristics for CNTFETs are presented. Here we use non-equilibrium Green’s function (NEGF) to perform simulation for CNTFET. This simulator also includes a graphic user interface (GUI) of Matlab that enables parameter entry, calculation control, display of calculation results. In this work, we review the capabilities of the simulator, summarize the theoretical

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23

Falaschetti, Laura, Davide Mencarelli, Nicola Pelagalli, et al. "A Compact and Robust Technique for the Modeling and Parameter Extraction of Carbon Nanotube Field Effect Transistors." Electronics 9, no. 12 (2020): 2199. http://dx.doi.org/10.3390/electronics9122199.

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Carbon nanotubes field-effect transistors (CNTFETs) have been recently studied with great interest due to the intriguing properties of the material that, in turn, lead to remarkable properties of the charge transport of the device channel. Downstream of the full-wave simulations, the construction of equivalent device models becomes the basic step for the advanced design of high-performance CNTFET-based nanoelectronics circuits and systems. In this contribution, we introduce a strategy for deriving a compact model for a CNTFET that is based on the full-wave simulation of the 3D geometry by usin

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24

FAEZ, RAHIM, and SEYED EBRAHIM HOSSEINI. "NOVEL STRUCTURES FOR CARBON NANOTUBE FIELD EFFECT TRANSISTORS." International Journal of Modern Physics B 23, no. 19 (2009): 3871–80. http://dx.doi.org/10.1142/s0217979209052911.

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A carbon nanotube field effect transistor (CNTFET) has been studied based on the Schrödinger–Poisson formalism. To improve the saturation range in the output characteristics, new structures for CNTFETs are proposed. These structures are simulated and compared with the conventional structure. Simulations show that these structures have a wider output saturation range. With this, larger drain-source voltage (Vds) can be used, which results in higher output power. In the digital circuits, higher Vds increases noise immunity.

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25

M. F. Abdul Hadi, H. Hussin, and Y. Abd. Wahab. "Implementation of Taguchi Method in Improving the Logic Gates Performance based on Carbon Nanotube Field Effect Transistor Technology." International Journal of Nanoelectronics and Materials (IJNeaM) 16, DECEMBER (2023): 323–32. http://dx.doi.org/10.58915/ijneam.v16idecember.414.

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The International Roadmap for Device and Systems (IRDS) 2022 has emphasized the potential of CNTFETs to replace CMOS technology. Therefore, the substitution of silicon with carbon nanotubes (CNTs) has the potential to open new possibilities for the semiconductor industry, due to their compact size and superior electrical properties. Thus, this project utilized Cadence Virtuoso software to develop an optimized CNTFET design using Taguchi method. In this design, the Taguchi method was implemented to determine the best combination of design parameter and material for optimum CNTFET performance. T

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Rahman, Fahim, Prodyut Das, Md Forhad Hossain, Sazzaduzzaman Khan, and Rajib Chowdhury. "Design and Performance Evaluation of a 10GHz 32nm-CNTFET IR-UWB Transmitter for Inter-Chip Wireless Communication." Advanced Materials Research 646 (January 2013): 228–34. http://dx.doi.org/10.4028/www.scientific.net/amr.646.228.

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In this paper, we have presented the design and performance evaluation of a 10GHz 32nm-CNTFET IR-UWB transmitter for inter-chip wireless transmission. We have designed the transmitter using a VCO-based high speed clock generator and a positive and a negative monocycle Gaussian pulse generator. RF compatible Carbon Nano-Tube Field Effect Transistors (CNTFETs) have been used as the building blocks of the oscillator and the logic gates. The final design has resulted to a 7-channel-SWNT CNTFET-based transmitter for optimum 10GHz data rate with a promising 650mV pulse amplitude and only 1.069mW pow

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27

Naderi, Ali, S. Mohammad Noorbakhsh, and Hossein Elahipanah. "Temperature Dependence of Electrical Characteristics of Carbon Nanotube Field-Effect Transistors: A Quantum Simulation Study." Journal of Nanomaterials 2012 (2012): 1–7. http://dx.doi.org/10.1155/2012/532625.

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By developing a two-dimensional (2D) full quantum simulation, the attributes of carbon nanotube field-effect transistors (CNTFETs) in different temperatures have been comprehensively investigated. Simulations have been performed by employing the self-consistent solution of 2D Poisson-Schrödinger equations within the nonequilibrium Green's function (NEGF) formalism. Principal characteristics of CNTFETs such as current capability, drain conductance, transconductance, and subthreshold swing (SS) have been investigated. Simulation results present that as temperature raises from 250 to 500 K, the d

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28

JAMALABADI, ZAHRA, PARVIZ KESHAVARZI, and ALI NADERI. "SDC-CNTFET: STEPWISE DOPING CHANNEL DESIGN IN CARBON NANOTUBE FIELD EFFECT TRANSISTORS FOR IMPROVING SHORT CHANNEL EFFECTS IMMUNITY." International Journal of Modern Physics B 28, no. 07 (2014): 1450048. http://dx.doi.org/10.1142/s0217979214500489.

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A novel carbon nanotube field-effect transistor with stepwise doping profile channel (SDC-CNTFET) is introduced for short-channel effects (SCEs) improvement. In SDC-CNTFET, the channel is divided into five sections of equal length. Impurity concentration was reduced from 0.8 nm-1 to zero from the source side to the drain side of the channel, with stepwise profile. The devices have been simulated by the self-consistent solution of two-dimensional (2D) Poisson–Schrödinger equations, within the nonequilibrium Green's function (NEGF) formalism. We demonstrate that the proposed structure for CNTFET

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Reddy Eamani, Ramakrishna, Vinodhkumar Nallathambi, and Sasikumar Asaithambi. "A low-power high speed full adder cell using carbon nanotube field effect transistors." Indonesian Journal of Electrical Engineering and Computer Science 31, no. 1 (2023): 134. http://dx.doi.org/10.11591/ijeecs.v31.i1.pp134-142.

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The adder circuit is basic component of arithmetic logic design and that is the most important block of processor architecture. Moreover, power consumption is the main concern for real-time digital systems. In recent times, carbon nanotube field effect transistors (CNTFET) used for arithmetic circuit designs with high performance. A creative substitute for highspeed, less power, and small size in area designs is the CNTFET. This paper presents 1- bit full adder with CNTFETs for low power and high performance. Using the computer aided design (CAD) tool the proposed 1-bit full adder design model

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RamakrishnaReddy, Eamani, Nallathambi Vinodhkumar, and Asaithambi Sasikumar. "A low-power high speed full adder cell using carbon nanotube field effect transistors." A low-power high speed full adder cell using carbon nanotube field effect transistors 31, no. 1 (2023): 134–42. https://doi.org/10.11591/ijeecs.v31.i1.pp134-142.

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The adder circuit is basic component of arithmetic logic design and that is the most important block of processor architecture. Moreover, power consumption is the main concern for real-time digital systems. In recent times, carbon nanotube field effect transistors (CNTFET) used for arithmetic circuit designs with high performance. A creative substitute for highspeed, less power, and small size in area designs is the CNTFET. This paper presents 1- bit full adder with CNTFETs for low power and high performance. Using the computer aided design (CAD) tool the proposed 1-bit full adder design model

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31

Pradeep, Singh Yadav, Chandrakar Chinmay, and Kumar Sahu Anil. "Design and analysis of ternary delay flip-flop implemented with carbon nanotube field effect transistor." i-manager’s Journal on Electronics Engineering 13, no. 3 (2023): 1. http://dx.doi.org/10.26634/jele.13.3.19808.

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Flip-flops serve as fundamental memory storage elements in digital circuits, and their efficiency significantly affects overall circuit performance. The aim of this study is to create a D flip-flop based on ternary logic and evaluate its performance in comparison to flip-flops that have already been designed. The proposed D flip-flop design leverages Carbon Nanotube Field Effect Transistors (CNTFETs). CNTFETs offer unique properties that can enhance the speed and power efficiency of flip-flop design. To evaluate the performance of the proposed design, it was simulated using the HSPICE simulato

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32

Yao, Xuesong, Yalei Zhang, Wanlin Jin, Youfan Hu, and Yue Cui. "Carbon Nanotube Field-Effect Transistor-Based Chemical and Biological Sensors." Sensors 21, no. 3 (2021): 995. http://dx.doi.org/10.3390/s21030995.

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Chemical and biological sensors have attracted great interest due to their importance in applications of healthcare, food quality monitoring, environmental monitoring, etc. Carbon nanotube (CNT)-based field-effect transistors (FETs) are novel sensing device configurations and are very promising for their potential to drive many technological advancements in this field due to the extraordinary electrical properties of CNTs. This review focuses on the implementation of CNT-based FETs (CNTFETs) in chemical and biological sensors. It begins with the introduction of properties, and surface function

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Zahoor, Furqan, Fawnizu Azmadi Hussin, Farooq Ahmad Khanday, et al. "Carbon Nanotube Field Effect Transistor (CNTFET) and Resistive Random Access Memory (RRAM) Based Ternary Combinational Logic Circuits." Electronics 10, no. 1 (2021): 79. http://dx.doi.org/10.3390/electronics10010079.

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The capability of multiple valued logic (MVL) circuits to achieve higher storage density when compared to that of existing binary circuits is highly impressive. Recently, MVL circuits have attracted significant attention for the design of digital systems. Carbon nanotube field effect transistors (CNTFETs) have shown great promise for design of MVL based circuits, due to the fact that the scalable threshold voltage of CNTFETs can be utilized easily for the multiple voltage designs. In addition, resistive random access memory (RRAM) is also a feasible option for the design of MVL circuits, owing

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Shahangian, Maryam, Seied Ali Hosseini, and Reza Faghih Mirzaee. "A Universal Method for Designing Multi-Digit Ternary to Binary Converter Using CNTFET." Journal of Circuits, Systems and Computers 29, no. 12 (2020): 2050196. http://dx.doi.org/10.1142/s0218126620501960.

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Ternary logic can reduce the number of interconnections, chip area and power dissipation. In addition, one of the important features of carbon nanotube field effect transistors (CNTFETs) is the capability of adjusting threshold voltage. As a result, the design complexity of ternary circuits can be decreased. The structure of a mixed radix system which is based on multi-valued and binary logic is more appropriate compared to only multiple-valued logic (MVL). Therefore, ternary-to-binary and binary-to-ternary converters are the essential components for the ternary signaling on the bus and the bi

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Huang, Wentao, and Lan Chen. "A Compact Model of Carbon Nanotube Field-Effect Transistors for Various Sizes with Bipolar Characteristics." Electronics 13, no. 7 (2024): 1355. http://dx.doi.org/10.3390/electronics13071355.

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Carbon nanotubes have excellent electrical properties and can be used as a new generation of semiconductor materials. This paper presents a compact model for carbon nanotube field-effect transistors (CNTFETs). The model uses a semi-empirical approach to model the current–voltage properties of CNTFETs with gate lengths exceeding 100 nm. This study introduces an innovative approach by proposing physical parametric reference lengths (Lref), which facilitate the integration of devices of varying sizes into a unified modeling framework. Furthermore, this paper develops models for the bipolar proper

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Marani, R., and A. G. Perri. "Analysis of Noise in Current Mirror Circuits Based on CNTFET and MOSFET." ECS Journal of Solid State Science and Technology 11, no. 3 (2022): 031006. http://dx.doi.org/10.1149/2162-8777/ac5eb1.

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In this paper we present a comparative analysis of noise performance of Carbon Nanotube Field Effect Transistors (CNTFETs) and MOSFET, through the design of two circuits: a basic current mirror and self-bias current mirror, each time with different current values. For this aim we use a semi-empirical compact CNTFET model, already proposed by us, including noise source contributions, and the BSIM4 model for MOS device. Then we analyze and discuss the spectral density of output noise current, comparing the two considered technology. The software used is Advanced Design System (ADS), compatible w

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Haq, Shams ul, Erfan Abbasian, Tabassum Khurshid, Shaik Javid Basha, and Vijay Kumar Sharma. "Design analysis of a low-power, high-speed 8 T SRAM cell using dual-threshold CNTFETs." Physica Scripta 99, no. 8 (2024): 085237. http://dx.doi.org/10.1088/1402-4896/ad61ca.

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Abstract Recently, carbon nanotube field-effect transistors (CNTFETs) have garnered significant attention from VLSI engineers due to their exceptional electrical properties. This paper proposes a novel high-speed, low-power eight-transistor (8 T) static random-access memory (SRAM) cell based on 32-nm CNTFET technology. The SRAM cell was simulated using the HSPICE tool with a VDD of 0.9 V. The high-speed and low-power characteristics of the SRAM design are attributed to the high subthreshold slope and high carrier mobility of metal-oxide-semiconductor field-effect transistor (MOSFET)-like CNTFE

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Fooladvand, Hamed, Karim Abbasian, and Hamed Baghban. "Multiplexor 4 x 1 de alto rendimiento basado en un transistor de efecto de campo de nanotubos de carbono de pared simple con lógica de transistor de paso similar a CMOS." Revista Ingeniería UC 27, no. 3 (2020): 294–303. http://dx.doi.org/10.54139/revinguc.v27i3.149.

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En los últimos años, según muchos estudios, el transistor de efecto de campo de nanotubos de carbono (CNTFET)mostró un alto rendimiento en muchos circuitos lógicos debido a sus propiedades y en comparación con otros homólogos desilicio. Sin embargo, garantizar estos beneﬁcios sigue siendo un desafío para la aplicación de circuitos integrados a nanoescala.Debido a sus excelentes características eléctricas y mecánicas, CNTFET es uno de los sustitutos más prometedores de latecnología de transistores de efecto de campo semiconductores de óxido metálico (MOSFET). Aunque estas característicasson ade

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Naderi, Ali. "Numerical study of carbon nanotube field effect transistors in presence of carbon–carbon third nearest neighbor interactions." International Journal of Modern Physics B 28, no. 24 (2014): 1450167. http://dx.doi.org/10.1142/s0217979214501677.

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In this paper, for the first time, we have used a more precise Hamiltonian matrix based on first nearest neighbor (1NN) and third nearest neighbor (3NN) carbon–carbon interactions to simulate carbon nanotube field effect transistors (CNTFETs). By taking the interactions with more distant neighbors into account, an improvement in tight-binding picture is gained. A self-consistent solution of Schrodinger equation based on nonequilibrium Green's function (NEGF) formalism coupled to a two-dimensional Poisson's equation for treating the electrostatics of the device has been employed to simulate CNT

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Haq, Shams Ul, Maedeh Orouji, Tabassum Khurshid, and Erfan Abbasian. "An efficient design methodology for a tri-state multiplier circuit in carbon nanotube technology." Physica Scripta 100, no. 1 (2024): 015008. https://doi.org/10.1088/1402-4896/ad9646.

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Abstract This study delves into the computational aspects of ternary logic and the use of carbon nanotube field-effect transistors (CNTFETs) to develop an energy-efficient and robust ternary multiplier (TMUL). Leveraging the exceptional qualities of CNTFETs, such as balanced electron and hole mobility and easy modulation of threshold voltage, the research aims to achieve the desired designs. An innovative design method is employed, recommending a reduced count of logic gates for achieving necessary logic levels. These gates are then utilized to manage the activation and deactivation of the pri

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Farmer, Damon B. "Metallization considerations for carbon nanotube device optimization." Journal of Applied Physics 132, no. 10 (2022): 104301. http://dx.doi.org/10.1063/5.0098970.

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As a one-dimensional structure with atomically thin sidewalls, charge transport in carbon nanotubes can be regarded as a surface phenomenon. As such, perturbations from the surrounding environment can have a dramatic impact on transport and consequently on the device behavior of carbon nanotube field-effect transistors (CNTFETs). Importantly, this includes effects from device fabrication processes like contact metallization. With this as motivation, several aspects of contact metallization are investigated herein. First, it is found that ON current in n-type CNTFETs is enhanced to the level of

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LI, HONG, QING ZHANG, and JINGQI LI. "CHARGE STORAGE IN CARBON NANOTUBE FIELD-EFFECT TRANSISTORS." International Journal of Nanoscience 05, no. 04n05 (2006): 553–57. http://dx.doi.org/10.1142/s0219581x06004784.

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Very significant hysteresis characteristics are found in single wall carbon nanotubes field-effect transistors (CNTFET) fabricated using AC dielectrophoresis method. The CNTFETs show ambipolar characteristics. Two clear hysteresis loops are observed when the gate voltage is forward and backward swept. The hysteresis characteristics are studied from room temperature down to 16 K. It is found that the hysteresis loops become smaller as temperature is decreased. We suggested that the hysteresis is caused by charge trapping in foreign species covering the single wall carbon nanotube. It is more di

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Yasir, Mohd, and Naushad Alam. "Design of CNTFET-Based CCII Using gm/ID Technique for Low-Voltage and Low-Power Applications." Journal of Circuits, Systems and Computers 29, no. 09 (2019): 2050143. http://dx.doi.org/10.1142/s0218126620501431.

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This paper introduces for the first time all the steps required in the optimal design of carbon nanotube field-effect transistor (CNTFET)-based second generation current conveyor (CCII) using transconductance-to-drain current ratio ([Formula: see text]) technique for low-voltage (LV) and low-power (LP) applications. The [Formula: see text] technique is a well-established methodology for CMOS analog IC design. However, the difference between CMOS and CNTFET is that CMOS has continuous width while the width of CNTFET is discrete and depends on different parameters like the number of tubes, pitch

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Houda, Ghabri, Ben Issa Dalenda, and Samet Hekmet. "New Optimized Reconfigurable ALU Design Based on DG-CNTFET Nanotechnology." International Journal of Reconfigurable and Embedded Systems 7, no. 3 (2020): 195–202. https://doi.org/10.5281/zenodo.3894321.

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The heart of the microprocessor and responsible for the execution of logical and arithmetic operations, the arithmetic and logical unit is constantly optimized. The performance is improved to allow the development of more powerful and smaller circuits. This paper describes simple ALU but contains the essentials functions. It is a reconfigurable ALU based on double-gate carbon nanotube field effect transistor (DG-CNTFETs). This transistor has an interesting property, it can switch from p- to n- type behavior and viceversa dynamically. This opens the opportunity for building novel and complex fu

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Houda, Ghabri, Ben Issa Dalenda, and Samet Hekmet. "New Optimized Reconfigurable ALU Design Based on DG-CNTFET Nanotechnology." International Journal of Reconfigurable and Embedded Systems 7, no. 3 (2018): 195–202. https://doi.org/10.11591/ijres.v7.i3.pp195-202.

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The heart of the microprocessor and responsible for the execution of logical and arithmetic operations, the arithmetic and logical unit is constantly optimized. The performance is improved to allow the development of more powerful and smaller circuits. This paper describes simple ALU but contains the essentials functions. It is a reconfigurable ALU based on double-gate carbon nanotube field effect transistor (DG-CNTFETs). This transistor has an interesting property, it can switch from p- to n- type behavior and viceversa dynamically. This opens the opportunity for building novel and complex fu

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Nandhaiahgari, Dinesh Kumar, Prasad Somineni Rajendra, and Raja Kumari CH. "Design and analysis of different full adder cells using new technologies." International Journal of Reconfigurable and Embedded Systems 9, no. 2 (2020): 116–24. https://doi.org/10.11591/ijres.v9.i2.pp116-124.

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CMOS transistors are most widely used for the design of computerized circuits, when scaling down the nanometer technology these devices faces the short channel effects and causes I-V characteristics to depart from the traditional MOSFETs, So the researchers have developed the other transistors technologies like CNTFET and GNRFET. Carbon nanotube field effect transistor is one of the optimistic technologies and it is a three terminal transistor similar to MOSFET. The semiconducting channel between the two terminals called source and drain comprises of the nano tube which is made of carbon. Grap

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Saini, Jitendra Kumar, Avireni Srinivasulu, and Renu Kumawat. "High-Performance Low-Power 5:2 Compressor With 30 CNTFETs Using 32 nm Technology." International Journal of Sensors, Wireless Communications and Control 9, no. 4 (2019): 462–67. http://dx.doi.org/10.2174/2210327909666190206144601.

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Background: The advent of High Performance Computing (HPC) applications and big data applications has made it imparitive to develop hardware that can match the computing demands. In such high performance systems, the high speed multipliers are the most sought after components. A compressor is an important part of the multiplier; it plays a vital role in the performance of multiplier, also it contributes to the efficiency enhancement of an arithmetic circuit. The 5:2 compressor circuit design proposed here improves overall performance and efficiency of the arithmetic circuits in terms of power

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Arul, P., and K. Helen Prabha. "A Comprehensive Analysis of Short Channel Effects on Carbon Nano Tube Field Effect Transistors." Journal of Nanoelectronics and Optoelectronics 16, no. 12 (2021): 1905–12. http://dx.doi.org/10.1166/jno.2021.3144.

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As the direction of World health organization (WHO) report the diseases like male infertility, brain tumor, hearing impairment, fetus issues, effect on eyes and other various parts of the human body caused by harmful radiations released by portable electronic devices. To reduce radiation and size, a deep scaling has been applied on MOSFETs. Due to this aggressive scaling MOSFET devices are affected by Short Channel Effects (SCE) in Nanometer regime (<10 nm). The Short Channel Effects Such as Subthreshold Swing (SS), Drain Induced barrier Lowering (DIBL) and threshold voltage roll-off (VT),

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Ghabri, Houda, Dalenda Ben Issa, and Hekmet Samet. "New Optimized Reconfigurable ALU Design Based on DG-CNTFET Nanotechnology." International Journal of Reconfigurable and Embedded Systems (IJRES) 7, no. 3 (2019): 189. http://dx.doi.org/10.11591/ijres.v7.i3.pp189-196.

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<p>The heart of the microprocessor and responsible for the execution of logical and arithmetic operations, the arithmetic and logical unit is constantly optimized. The performance is improved to allow the development of more powerful and smaller circuits. This paper describes simple ALU but contains the essentials functions. It is a reconfigurable ALU based on double-gate carbon nanotube field effect transistor (DG-CNTFETs). This transistor has an interesting property, it can switch from p- to n- type behavior and vice-versa dynamically. This opens the opportunity for building novel and

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50

Ghabri, Houda, Dalenda Ben Issa, and Hekmet Samet. "New Optimized Reconfigurable ALU Design Based on DG-CNTFET Nanotechnology." International Journal of Reconfigurable and Embedded Systems (IJRES) 7, no. 3 (2019): 195. http://dx.doi.org/10.11591/ijres.v7.i3.pp195-202.

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<p>The heart of the microprocessor and responsible for the execution of logical and arithmetic operations, the arithmetic and logical unit is constantly optimized. The performance is improved to allow the development of more powerful and smaller circuits. This paper describes simple ALU but contains the essentials functions. It is a reconfigurable ALU based on double-gate carbon nanotube field effect transistor (DG-CNTFETs). This transistor has an interesting property, it can switch from p- to n- type behavior and vice-versa dynamically. This opens the opportunity for building novel and

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