Relevant bibliographies by topics / Compact analytical model

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  1. Journal articles

Academic literature on the topic 'Compact analytical model'

Author: Grafiati
Published: 20 April 2024

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Journal articles on the topic "Compact analytical model"

1

Paul, Bipul C., Ryan Tu, Shinobu Fujita, Masaki Okajima, Thomas H. Lee, and Yoshio Nishi. "An Analytical Compact Circuit Model for Nanowire FET." IEEE Transactions on Electron Devices 54, no. 7 (2007): 1637–44. http://dx.doi.org/10.1109/ted.2007.899397.

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2

Banerjee, Ayan, M. K. Jasim, and Anirudh Pradhan. "Analytical model of dark energy stars." Modern Physics Letters A 35, no. 10 (2020): 2050071. http://dx.doi.org/10.1142/s0217732320500716.

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In this paper, we study the structure and stability of compact astrophysical objects which are ruled by the dark energy equation of state (EoS). The existence of dark energy is important for explaining the current accelerated expansion of the universe. Exact solutions to Einstein field equations (EFE) have been found by considering particularized metric potential, Finch and Skea ansatz. 1 The obtained solutions are relevant to the explanation of compact fluid sphere. Further, we have observed at the junction interface that the interior solution is matched with the Schwarzschild’s exterior vacu
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3

Verma, Yogesh Kumar, Varun Mishra, and Santosh Kumar Gupta. "A Physics-Based Analytical Model for MgZnO/ZnO HEMT." Journal of Circuits, Systems and Computers 29, no. 01 (2019): 2050009. http://dx.doi.org/10.1142/s0218126620500097.

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In this paper, a physics-based compact model is developed for novel MgZnO/ZnO high-electron-mobility transistor (HEMT). Poisson’s equation coupled with 1D Schrödinger equation is solved self-consistently in the triangular quantum well to derive an expression of two-dimensional electron gas (2DEG) density with respect to gate voltage at the heterointerface of barrier (MgZnO) and buffer (ZnO) layers. A compact mathematical framework has been devised further for the first time for ZnO-based HEMT to the best of our knowledge using the expression of 2DEG density to compute surface potential, gate c
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4

Baskey, Lipi, Shyam Das, and Farook Rahaman. "An analytical anisotropic compact stellar model of embedding class I." Modern Physics Letters A 36, no. 05 (2021): 2150028. http://dx.doi.org/10.1142/s0217732321500280.

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A class of solutions of Einstein field equations satisfying Karmarkar embedding condition is presented which could describe static, spherical fluid configurations, and could serve as models for compact stars. The fluid under consideration has unequal principal stresses i.e. fluid is locally anisotropic. A certain physically motivated geometry of metric potential has been chosen and codependency of the metric potentials outlines the formation of the model. The exterior spacetime is assumed as described by the exterior Schwarzschild solution. The smooth matching of the interior to the exterior S
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5

Pavanello, Marcelo Antonio, Renan Trevisoli, Rodrigo Trevisoli Doria, and Michelly de Souza. "Static and dynamic compact analytical model for junctionless nanowire transistors." Journal of Physics: Condensed Matter 30, no. 33 (2018): 334002. http://dx.doi.org/10.1088/1361-648x/aad34f.

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6

Naeve, T., M. Hohenbild, and P. Seegebrecht. "A new analytical compact model for two-dimensional finger photodiodes." Solid-State Electronics 52, no. 2 (2008): 299–304. http://dx.doi.org/10.1016/j.sse.2007.09.008.

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7

Balaguer, M., B. Iñiguez, and J. B. Roldán. "An analytical compact model for Schottky-barrier double gate MOSFETs." Solid-State Electronics 64, no. 1 (2011): 78–84. http://dx.doi.org/10.1016/j.sse.2011.06.045.

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8

Mantelli, M. B. H., and M. M. Yovanovich. "Compact analytical model for overall thermal resistance of bolted joints." International Journal of Heat and Mass Transfer 41, no. 10 (1998): 1255–66. http://dx.doi.org/10.1016/s0017-9310(97)00204-4.

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9

Inokawa, H., and Y. Takahashi. "A compact analytical model for asymmetric single-electron tunneling transistors." IEEE Transactions on Electron Devices 50, no. 2 (2003): 455–61. http://dx.doi.org/10.1109/ted.2002.808554.

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10

Jia, Yonghao, Yuehang Xu, Zhang Wen, Yunqiu Wu, and Yongxin Guo. "Analytical Gate Capacitance Models for Large-Signal Compact Model of AlGaN/GaN HEMTs." IEEE Transactions on Electron Devices 66, no. 1 (2019): 357–63. http://dx.doi.org/10.1109/ted.2018.2881255.

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