Relevant bibliographies by topics / COMPOSE GALLIUM

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  1. Journal articles
  2. Dissertations / Theses
  3. Books
  4. Book chapters
  5. Conference papers

Academic literature on the topic 'COMPOSE GALLIUM'

Author: Grafiati
Published: 4 June 2021
Last updated: 18 February 2022

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Journal articles on the topic "COMPOSE GALLIUM"

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Awan, Z. A., Hassan Ullah, Ahsan Ullah, and Afshan Ashraf. "Effective parameters of a metamaterial composed of dielectric coated conducting cylindrical rods." International Journal of Microwave and Wireless Technologies 12, no. 8 (February 19, 2020): 797–808. http://dx.doi.org/10.1017/s1759078720000094.

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AbstractIn the first part, the scattering characteristics of an isolated dielectric coated conducting rod have been investigated. The types of considered coatings for the scattering analysis are realistic materials including barium strontium titanate, magnetodielectric, gallium arsenide, and silicon carbide. It is found that the gallium arsenide coating can be used to significantly reduce the scattering from a thin perfectly electric conducting cylindrical rod at specific observation angles. In the second part, the effective permittivity and permeability of metamaterials composed of two dimensional periodic arrangements of these dielectric coated conducting cylindrical rods have been studied. An increase in the double negative (DNG) bandwidth of a metamaterial composed of barium strontium titanate coated conducting rods has been observed in contrast to the corresponding bandwidth of a metamaterial composed of only barium strontium titanate material rods. Also an additional plasmonic epsilon negative (ENG) bandwidth has been found in case of a metamaterial composed of barium strontium titanate coated conducting rods. It is further studied that the widest ENG, mu negative, and DNG bandwidths exist for a metamaterial composed of gallium arsenide rods.
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Monnens, Wouter, Pin-Cheng Lin, Clio Deferm, Koen Binnemans, and Jan Fransaer. "Electrochemical behavior and electrodeposition of gallium in 1,2-dimethoxyethane-based electrolytes." Physical Chemistry Chemical Physics 23, no. 29 (2021): 15492–502. http://dx.doi.org/10.1039/d1cp01074c.

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The electrodeposition of gallium from GaCl3 in 1,2-dimethoxyethane (DME) is a two-step reduction process, leading to a deposit composed of spherical gallium droplets covered by thin gallium oxide shells.
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Divya. "Graph Theoretical Representation, Analysis and Synthesis of Amorphous Metal Oxide Networks." MRS Advances 2, no. 48 (2017): 2639–44. http://dx.doi.org/10.1557/adv.2017.342.

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ABSTRACTWith the advent of amorphous oxide semiconductors (AOS) like amorphous indium gallium zinc oxide (a-IGZO), the analysis and prediction of amorphous structures has regained importance, more so, since first principles based studies are being increasingly employed to explain device behavior. Negative bias illumination stress in a-IGZO thin film transistors is one such example. However, the amorphous atomic structure is complex and defect or dopant studies require each site to be modeled independently and this leads to significant computational costs. Therefore, a simplification in the representation of the amorphous oxide network is effected so that it may lead to identifying similar atomic sites. The amorphous network is visualized as a network of polyhedra. The polyhedra has at its center a cation with the bonded oxygen atoms at the vertices and it comprises the short range interactions characterized by bond lengths and bond angles. Based on a first principles study of 10 a-IGZO models containing 36 cations each, it was found that the 360 polyhedra of the a-IGZO models can actually be described with only ten polyhedral motifs. These polyhedra are then connected to each other via a shared vertex or an edge; face-sharing was not observed in these models. Graph theory is used to map this network using either a graph of cationic polyhedra as the nodes or a bipartite graph (composed of cations and anions as individual nodes), each of which is described using the respective adjacency matrix. The second nearest interactions are characterized by the degree of each vertex and each atomic site is now characterized by a polyhedron and network metrics; and hence, can be compared with same-element sites. The changes in network itself, are quantified as the composition changes, when varying the ratio of In:Ga:Zn in a-IGZO. For example, the average vertex connectivity of a pair of indium sites reflects on the continuity of overlap between the In-5s orbitals which compose the conduction band minimum in a-IGZO, which, in turn, affects the transport properties of the semiconductor. Thus, the long range interactions of the physical amorphous network are described by the graph metrics. Moreover, evolutionary algorithm in conjunction with this graph theoretic representation can be used to generate new amorphous models. Two parent graph are chosen and then spliced and then bred. The new graph is then reverse-engineered to form an amorphous model which then undergoes ionic and volume relaxation in the framework of density functional theory. The resulting graph is the child and the new amorphous model, with the energy as the fitness criteria.
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Feschotte, P., and K. Yvon. "Etude stoechiometrique des composes intermediaires dans le systeme gallium-magnesium." Journal of the Less Common Metals 158, no. 1 (February 1990): 89–97. http://dx.doi.org/10.1016/0022-5088(90)90434-l.

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Николаев, В. И., А. В. Чикиряка, Л. И. Гузилова, and А. И. Печников. "Микротвердость и трещиностойкость оксида галлия." Письма в журнал технической физики 45, no. 21 (2019): 51. http://dx.doi.org/10.21883/pjtf.2019.21.48476.17991.

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The microhardness and the fracture toughness of two main polytypes of gallium oxide (a metastable α-Ga2O3 and thermodynamically stable high-temperature β-Ga2O3 phase) have been investigated. The measurements were carried out by the Vickers hardness test method. This is the first attempt to compare the mechanical properties of various polytypes of gallium oxide.
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Alvarez-Vera, Manuel, Ana Largo, Sergio Iglesias-Abad, and Jorge Castillo. "Quality of compost obtained from hen manure, with application of beneficial microorganisms." Scientia Agropecuaria 10, no. 3 (September 30, 2019): 353–61. http://dx.doi.org/10.17268/sci.agropecu.2019.03.05.

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LI, JIANYE, XIAOLONG CHEN, GANG ZHANG, and JEONG YONG LEE. "SYNTHESIS AND STRUCTURE OF Ga2O3 NANOSHEETS." Modern Physics Letters B 16, no. 10n11 (May 10, 2002): 409–14. http://dx.doi.org/10.1142/s0217984902003853.

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Monoclinic gallium oxide nanosheets were synthesized on a large scale through a simple gas reaction method. They were characterized by means of X-ray powder diffraction (XRD), field emission scanning electron microscopy (FE-SEM), energy-dispersive X-ray spectroscopy (EDS), high-resolution transmission electron microscopy (HRTEM), and Raman spectroscopy. FE-SEM images showed that the product was mainly composed of nanosheets. XRD, EDS and Raman spectra indicated the nanosheets were a monoclinic gallium oxide structure. An HRTEM lattice image revealed that the nanosheets are nearly uniform in structure and single crystalline.
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Adak, Biplab, Ipsita Chinya, and Shrabanee Sen. "Enhanced dielectric and energy storage performance of surface treated gallium ferrite/polyvinylidene fluoride nanocomposites." RSC Advances 6, no. 107 (2016): 105137–45. http://dx.doi.org/10.1039/c6ra22939e.

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The ceramic–polymer nanocomposites composed of gallium ferrite (GFO) nanoparticles and employing sodium dodecylsulphate (SDS) as surfactant and polyvinylidene fluoride (PVDF) as matrix have been fabricated by solvent casting followed by hot-press technique.
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Warrell, R. P., W. K. Murphy, P. Schulman, P. J. O'Dwyer, and G. Heller. "A randomized double-blind study of gallium nitrate compared with etidronate for acute control of cancer-related hypercalcemia." Journal of Clinical Oncology 9, no. 8 (August 1991): 1467–75. http://dx.doi.org/10.1200/jco.1991.9.8.1467.

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Hypercalcemia is a major source of morbidity and mortality in patients with cancer. Gallium nitrate and the bisphosphonate, etidronate, are new agents that have recently become available for treatment of this disorder. To directly compare therapeutic effectiveness, we conducted a randomized, double-blind, multicenter study of gallium nitrate compared with etidronate for acute control of cancer-related hypercalcemia. Gallium nitrate was administered by continuous intravenous (IV) infusion at a dose of 200 mg/m2/d. Etidronate was administered as a 4-hour IV infusion at a dose of 7.5 mg/kg. Both drugs were given daily for 5 consecutive days. Eligible patients had persistent moderate-to-severe hypercalcemia (total serum calcium [corrected for serum albumin] greater than or equal to 12.0 mg/dL) after 2 days of hospitalization and IV hydration. Seventy-one patients were randomized and treated. Twenty-eight of 34 patients (82%) who received gallium nitrate achieved normocalcemia compared with 16 of 37 patients (43%) who received etidronate (P less than .001). Patients who received etidronate required significantly greater amounts of IV fluids (P = .04) and more hypocalcemic drug treatment (P less than .05) during the poststudy period than patients who received gallium nitrate. Kaplan-Meier analysis showed a significantly longer median duration of normocalcemia for patients treated with gallium nitrate (8 days v 0 days, P = .0005). A significantly higher proportion of patients treated with gallium nitrate developed asymptomatic hypophosphatemia compared with patients treated with etidronate (97% v 43%, P less than .001). We conclude that gallium nitrate is highly effective and superior to etidronate for acute control of moderate-to-severe cancer-related hypercalcemia.
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Xiang, Xiong, Yu Fan, Wei Liu, and Aiwu Fan. "Comparison between thermal resistances of optimized water-based and gallium-based heat sinks using the genetic algorithm." International Journal of Numerical Methods for Heat & Fluid Flow 30, no. 3 (September 23, 2019): 1388–406. http://dx.doi.org/10.1108/hff-07-2019-0590.

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Purpose The purpose of this paper is to compare the thermal resistances between optimized gallium- and water-based heat sinks to show which one is superior. Design/methodology/approach Taking the thermal resistances of heat sinks as the goal function, an optimization process is programmed based on the genetic algorithm. The optimal channel/fin widths and the corresponding thermal resistances of gallium- and water-based heat sinks are obtained and compared with/without a laminar flow constraint. The analytic model and CFD method are applied in different situations to ensure sufficient accuracy. Findings The results show that in the laminar regime, the thermal resistance of optimized gallium-based heat sink is lower than the water-based counterpart in most cases, but the latter becomes better if it is long enough or the channel is sufficient high. Without the laminar constraint, the thermal resistance of the optimized gallium-based heat sink can be decreased by 33-45 per cent compared with the water-based counterparts. It is interesting to find that when the heat sink is long or the channel height is short, the optimal geometry of gallium-based heat sink is a mini gap. Originality/value This paper demonstrates that the cooling performance of gallium-based heat sink can be significantly improved by optimization without the laminar flow constraint.
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Dissertations / Theses on the topic "COMPOSE GALLIUM"

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Brilhault, Annick. "CONTRIBUTION A L'ETUDE DE CERTAINS ELEMENTS DE TRANSITION DANS LES SEMICONDUCTEURS PAR METHODE DE PHOTOCONDUCTIVITE (GaAs:V, Si:Au, Si:Pt)." Toulouse, INSA, 1987. http://www.theses.fr/1987ISAT0027.

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ETUDE DE TROIS ELEMENTS DE TRANSITION DANS LES SEMICONDUCTEURS PAR PHOTOCONDUCTIVITE. 1)GaAs: NOUS PROPOSONS UN NIVEAU SCHEMA D'ENERGIE. UN NIVEAU SIMPLE ACCEPTEUR (V)**(O)/(V)**(-) A E::(C)-0,16 EV ET UN NIVEAU DOUBLE ACCEPTEUR (V)-/(V), A Ec- 0,65 eV. 2)Si:Au NOUS CONFIRMONS LES POSITIONS RESPECTIVES DES NIVEAUX DONNEUR ET ACCEPTEUR LIES A L'OR A Ev + 0,35 eV ET Ev + 0,63 eV. 3)Si:Pt LES EXPERIENCES REALISEES ONT MIS EN EVIDENCE LE NIVEAU ACCEPTEUR (o/-) DU PLATINE SUBSTITUTIONNEL A UNE ENERGIE DE 0,915 eV PAR RAPPORT A LA BANDE DE VALENCE
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GILLMANN, GILBERT. "Dopage plan silicium dans l'arseniure de gallium." Paris 6, 1988. http://www.theses.fr/1988PA066256.

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Apres avoir rappele le principe de la technique de croissance d'epitaxie par jets moleculaires, presentation d'un ensemble de caracterisations magneto-electriques (effet hall a bas champ magnetique, magneto-resistance et effet a fort champ magnetique), mais aussi des resultats purement electriques de c(v). Analyses par spectroscopie de masse d'ions secondes et mesures de double diffraction x. Tres bon accord entre ces resultats experimentaux et les investigations theoriques sur ces structures. Application de la technique a l'elaboration de dopages intenses, de contact ohmiques non allies et de transistors a effet de champ dont le canal est constitue par un dopage plan. Les performances presentees montrent les potentialites des dopages plan dans l'application a des structures de plus en plus sophistiquees
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Gabilliet, Sylvie. "Contribution a la construction d'une installation de croissance hgf : PREMIERS RESULTATS SUR GaAs : Nb." Toulouse, INSA, 1986. http://www.theses.fr/1986ISAT0020.

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CONSTRUCTION D'UNE INSTALLATION DE CROISSANCE DES MONOCRISTAUX EQUIPEE D'UN DISPOSITIF DE DETECTION DES VARIATIONS DE DIAMETRE DE L'AMPOULE D'ELABORATION. ELABORATION DE PETITS MONOCRISTAUX DE GaAs:Nb ET GAAS:PD ET DE MONOCRISTAUX PLUS IMPORTANTS SOUS TENSION DE VAPEUR D'ARSENIC CONTROLEE. CARACTERISATION PAR PHOTOLUMINESCENCE
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Armelles, Gaspar. "Le vanadium dans l'arseniure de gallium : l'or et le platine dans le silicium." Toulouse, INSA, 1986. http://www.theses.fr/1986ISAT0021.

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Etude de la raie de luminescence du vanadium dans l'asga. Le vanadium est dans l'etat v(3+) sur site tetraedrique ga. La transition optique est 3t(2)->3a(2). Dans le cas du platine dans si, mise en evidence de 2 transitions optiques associees respectivement au platine en site interstitiel et subtitutionnel. Mise en evidence des spectres d'absorption associes a l'or et au platine en etat accepteur
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Langot, Pierre. "Etude femtoseconde de la thermalisation des porteurs libres dans l'arseniure de gallium." Palaiseau, Ecole polytechnique, 1996. http://www.theses.fr/1996EPXX0021.

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Ce travail porte sur l'etude des interactions porteur-porteur et porteur-phonon dans l'arseniure de gallium par des techniques pompe-sonde de saturation d'absorption femtoseconde a haute sensibilite. Pour cela, une source femtoseconde a deux couleurs a ete developpee par conversion de frequence non-lineaire des impulsions fournies par un oscillateur femtoseconde a saphir dope titane. Nous avons tout d'abord etudie les mecanismes d'interaction des trous libres dans l'asga. Les mesures realisees sur l'echauffement de trous froids en fonction de la densite de porteurs photo-generes, de leur exces d'energie initial et de la temperature du reseau nous ont permis de mesurer directement le temps d'interaction trou-phonon et d'en deduire le potentiel de deformation optique. Une etude sur le ralentissement de la thermalisation electron-reseau du a la creation d'une population de phonons hors equilibre en centre de zone de brillouin est ensuite presentee. Les differentes mesures que nous avons realisees nous ont permis de demontrer que la thermalisation electrons-reseau aux temps longs est gouvernee par la duree de vie des phonons optiques, en accord avec un modele de simulations numeriques
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EN, NAQADJ EL-MEHDI. "Etude de gaas et gap semi-isolants dopes au vanadium par des techniques de detection thermique et acoustique de la rpe aux basses temperatures." Clermont-Ferrand 2, 1986. http://www.theses.fr/1986CLF21038.

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L'echauffement de l'echantillon du a la resonance est detecte, soit avec un thermometre au carbone, soit avec un microphone. Aux temperatures de l'helium liquide, ces methodes sont sensibles aux ions john teller fortement couples au reseau et donnent des signaux qui ne peuvent etre obtenus par rpe classique. Des systemes de raies intenses mis en evidence dans les deux composes sont crees et amplifies par l'illumination. Les centres responsables sont des centres v**(2+) associes dont l'etat le plus bas est constitue d'au moins trois doublets de kramers
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Blondel, Rodolphe. "PROPRIETES DE TRANSPORT DANS LE SYSTEME GaAs/AlxGa1-xAs." Toulouse, INSA, 1987. http://www.theses.fr/1987ISAT0098.

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DES MESURES DE MAGNETOTRANSPORT A TRES BASSE TEMPERATURE REVELENT LA STRUCTURE DE LA BANDE DE VALENCE PRES DU CENTRE DE ZONE DANS LES HETEROJONCTIONS DE TYPE P. DES MESURES D'EMISSION THERMOIONIQUE SONT REALISEES SUR DES BARRIERES POUR EVALUER LA DISTRIBUTION DE POTENTIEL ENTRE GaAs/AlxGa1-xAs. LE FACTEUR DE LANDE EFFECTIF DANS LE GAZ 2D EST DETERMINE AU MOYEN D'EXPERIENCES DE MAGNETOTRANSPORT A TRES BASSE TEMPERATURE CORRELEES A UN MODELE DE CONDUCTIVITE SOUS CHAMP MAGNETIQUE
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Nogaret, Alain. "Etude comparée du transport par effet tunnel résonnant dans les hétérostructures semiconductrices de type I et II en présence de pression hydrostatique et de fort champ magnétique." Toulouse, INSA, 1993. http://www.theses.fr/1993ISAT0037.

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Nous etudions la combinaison de l'effet tunnel resonnant avec l'effet tunnel interbande dans les heterostructures presentant un alignement de type ii. Dans les heterostructures de type i, la quantification magnetique montre qu'un electron avec une importante energie cinetique transverse conserve son energie plutot que son vecteur d'onde transverse, la pression hydrostatique met en evidence un pic de courant extraordinaire que nous attribuons a la formation de niveaux x lies dans les barrieres alas, le calcul clarifie la contribution des modes de phonons lo locaux au courant vallee. Nous exposons les procedes lithographiques que nous avons mis au point pour elaborer le systeme inas/alsb/gasb. Nous soulignons l'importance du choix de l'energie de fermi dans les electrodes et ses multiples consequences sur la forme des caracteristiques courant-tension des heterostructures de type ii. Nos resultats devoilent les mecanismes physiques responsables du courant resonnant interbande et suggerent l'existence d'une bande interdite d'hybridation due au couplage electron-trou. Nous interpretons l'effet tunnel interbande a travers des sous-bandes de trous par les regles de selection usuelles et observons pour la premiere fois la bistabilite intrinseque dans une structure de type ii. Ces resultats nous amenent a comparer les performances de dispositifs electroniques utilisant soit l'effet tunnel resonnant soit l'effet tunnel resonnant interbande
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Harmand, Jean-Christophe. "Possibilites offertes par l'epitaxie par jets moleculaires dans la croissance d'heterostructures gaas/gaalas pour transistors bipolaires." Paris 7, 1988. http://www.theses.fr/1988PA077072.

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Ce travail concerne la fabrication de couches de semiconducteurs iii-v et la realisation de structures pour transistors bipolaires a heterojonction. Ces structures font appel aux composes gaas, gaalas et gainas elabores par epitaxie par jets moleculaires. On etudie l'influence des conditions de croissance sur les caracteristiques des materiaux et notamment l'evolution des coefficients de collage des elements iii et la pression minimale d'arsenic necessaire a la croissance. On tente de modeliser les resultats experimentaux par une approche thermodynamique de l'epitaxie par jets moleculaires. On analyse les caracteristiques electriques des transistors en regime statique
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BENAKKI, STIET SALIHA. "Resonance paramagnetique electronique des defauts ponctuels intrinseques dans gaas apres une deformation plastique." Université Louis Pasteur (Strasbourg) (1971-2008), 1988. http://www.theses.fr/1988STR13080.

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Presence de plusieurs signaux, dont celui attribue a l'antisite anionique as::(ga), correle au donneur profond el2. Les parametres de ce ernier (constante d'interaction hyperfine a, largeur de raie laplacien de h) sont constants en fonction de la deformation et des traitements thermiques. Ces donnees, ainsi que les resultats obtenus sur gap irradie aux neutrons rapides, sont en faveur de l'attribution du signal observe ici au defaut ternaire as::(ga)v::(a)**(s)v::(ga). Attributions des signaux intenses observes apres les traitements a t>500**(o)c a des porteurs generes par separation spatiale au voisinage des inhomogeneites
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Books on the topic "COMPOSE GALLIUM"

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Günter, Weimann, Rupprecht H. S, and Institute of Physics (Great Britain), eds. Gallium arsenide and related compounds 1993: Proceedings of the Twentieth International Symposium on Gallium Arsenide and Related Compounds, Freiburg, Germany, 29 August-2 September, 1993. Bristol: Institute of Physics Pub., 1994.

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Cobalt in hard metals and cobalt sulfate, gallium arsenide, indium phosphide, and vanadium pentoxide. Lyon, France: International Agency for Research on Cancer, 2006.

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Textor, Mark. The Nature of Enjoyment. Oxford University Press, 2017. http://dx.doi.org/10.1093/oso/9780199685479.003.0012.

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According to Brentano, enjoying an activity is loving or liking it. Brentano’s conception of love and hate is expounded by way of the analogies he draws with positive and negative judgement and I compare Brentano’s view with its main competitors: enjoying is appraisive attention to (Ryle, Gallie), propositional pleasure that something is the case (Feldman), or desire for the occurrence of a sensation (Heathwood). I discuss Hamilton’s Argument from Temporal Direction against the desire view of enjoyment and propose that a modified version of the argument, the Argument from Awareness of Satisfaction, speaks in favour of Brentano’s view of enjoyment.
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(Contributor), WHO, ed. Cobalt in Hard-metals and Cobalt Sulfate, Gallium Arsenide, Indium Phosphide and Vanadium Pentoxide (IARC Monographs). World Health Organisation, 2006.

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Willardson, R. K. Semiconductors and Semimetals: Iii-V Compound Semiconductors Semiconductor Properties of Superionic Materials (Semiconductors and Semimetals). Academic Press, 1988.

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Helliwell, John F., Haifang Huang, and Shun Wang. New Evidence on Trust and Well-Being. Edited by Eric M. Uslaner. Oxford University Press, 2017. http://dx.doi.org/10.1093/oxfordhb/9780190274801.013.9.

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Data from three large international surveys—the Gallup World Poll, the World Values Survey and the European Social Survey—are used to estimate income-equivalent values for social trust, with a likely lower bound equivalent to a doubling of household income. Second, the more detailed and precisely measured trust data in the European Social Survey (ESS) are used to compare the effects of different types of social and political trust. While social trust and trust in police are most important, there are significant additional benefits from trust in three aspects of the institutional environment: the legal system, parliament and politicians. The total well-being value of a trustworthy environment is estimated to be larger than that flowing from social trust alone. Third, the ESS data show that being subject to discrimination, ill-health or unemployment is much less damaging to those living in trustworthy environments. These resilience-increasing features of social trust hence lessen well-being inequality by channeling the largest benefits to those at the low end of the well-being distribution.
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Book chapters on the topic "COMPOSE GALLIUM"

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Toczko, Rafał, and Przemysław Nehring. "THE PELAGIAN CONTROVERSY IN GALLIC MONASTIC HAGIOGRAPHIES COMPOSED WITHIN A CENTURY OF THE CONDEMNATION OF PELAGIUS." In 'Nos sumus tempora', 261–82. Peeters Publishers, 2020. http://dx.doi.org/10.2307/j.ctv1q26x87.17.

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Baldwin, Peter. "How the West Was One." In The Narcissism of Minor Differences. Oxford University Press, 2010. http://dx.doi.org/10.1093/oso/9780195391206.003.0020.

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When Americans Compare Their Country to others, it is almost invariably to find fault with it. Of course, there are tub-thumpers on the right wing, for whom the United States is the greatest nation and comparisons are drawn merely to underline that preeminence. But they are a predictable lot, and intellectually of no consequence. Comparisons with abroad are of little use when preaching to the choir if the choir does not care. Most conservative Americans are too uninterested in Europe to sit still for comparative explanations of U.S. superiority. Mitt Romney got very little traction from attacking French health care and other things Gallic during his abortive run for the Republican nomination in 2007. The vast majority of Americans’ comparisons are undertaken by social scientists with liberal leanings who hope that the United States will some day approximate Europe when it comes to family allowances, universal health insurance, parental leave, and the like. For them, Europe means northern Europe. They either ignore the south or see it too as aspiring to north European status. Stockholm is the mecca toward which the social science faithful pray. Because of their political reform agenda—fervent but unfulfilled—the tone they strike is wistful. Take as a recent example the American Human Development Report, published by a preeminent institution, the Social Science Research Council, and prefaced by multiple well-wishes from the great and the good. It is modeled on the UN’s attempt to sum up economic and human well-being in a single number, to compare nations and progress over time. Its wealth of information lays bare the sometimes dramatic disparities within the United States and shows where it is lagging in relation to peer comparison countries. That is all well and good, and who could fault it? It is when sight is lost of the larger picture that worries begin. Thus, the report presents a chart (Figure 1.2) showing an apparently precipitous decline in America’s human development ranking. The United States stood in second place, after Switzerland, in 1980. This held steady until 1995, when it plummeted over the next 15 years to land at the 12th spot in 2005. America’s numerical score has increased steadily, we are reassured. But the scores of other countries have risen even faster. As a result, the United States has fallen behind its more efficient competitors.
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Conference papers on the topic "COMPOSE GALLIUM"

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Su, Zonghui, Jonathan A. Malen, Jacob H. Melby, and Robert F. Davis. "Thermal Transport in LEDs for Solid State Lighting." In ASME/JSME 2011 8th Thermal Engineering Joint Conference. ASMEDC, 2011. http://dx.doi.org/10.1115/ajtec2011-44107.

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Over 20% of electricity in US is used by lighting. Solid state lighting (SSL) efficiency can theoretically surpass that of incandescent and fluorescent lighting techniques. Nonetheless SSL efficiency is greatly reduced at high temperatures that result from inadequate heat dissipation. SSL requires blue and green light emitting diodes (LEDs) made from Gallium Nitride (GaN) and Indium Gallium Nitride (InGaN) to eventually generate white light. Using an infrared thermal imaging camera, temperatures of working blue and green LEDs with different efficiencies were measured. The results show that higher efficiency LEDs have lower active region temperatures when driven with the same power. Further, they motivate our study of thermal properties of the individual thin films that compose the LEDs, since earlier studies show that conduction is the primary dissipative mechanism for heat in LEDs. Bulk thermal properties are poor estimates of thin film properties due to increased boundary and defect scattering of phonons in the films. By examining real LED structures with the 3-omega technique, thin film thermal conductivities can be measured. For this technique, a thin metal line was fabricated onto a smooth dielectric sample surface. This thin metal line works as both a heater and a thermometer. Benchmark studies on Pyrex 7740 were used to validate our 3-omega setup. Data from real GaN/InGaN LED structures show that the effective thermal conductivities of the AlN buffer layer and multi-quantum-well active region are substantially suppressed relative to their anticipated values based on bulk properties.
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Montague, J. R., D. Seghete, K. A. Bertness, N. A. Sanford, S. A. George, V. M. Bright, and C. T. Rogers. "High-Q, gallium nitride nanowire-ALD composite mechanical resonators." In TRANSDUCERS 2009 - 2009 International Solid-State Sensors, Actuators and Microsystems Conference. IEEE, 2009. http://dx.doi.org/10.1109/sensor.2009.5285813.

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Chao, Paul C. P., Jian-Ruei Chen, Che-Hung Tsai, and Wei-Dar Chen. "Design and Realization of High Resolution (640×480) SWIR Image Acquisition System." In ASME 2013 Conference on Information Storage and Processing Systems. American Society of Mechanical Engineers, 2013. http://dx.doi.org/10.1115/isps2013-2917.

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Imaging technology has been in revolutionary progresses in decades with well-developed semiconductor and memory industries. Silicon sensors are used in most of camera and DV, since silicon is the best material for visible light imaging (wavelength from 400nm∼700nm). Short wave infrared (SWIR) requires indium gallium arsenide (InGaAs), composed of chemical compounds including indium arsenide (InAs) and gallium arsenide (GaAs), to cover SWIR spectrum. Wavelength of typical SWIR is defined between 0.7um and 2.5um; SWIR cameras focus on wavelength between 0.9um∼1.7um (In0.53Ga0.47As). Unlike Mid-Wave IR and Long-Wave IR, SWIR is reflected and absorbed by objects, which advantages SWIR imaging higher resolution due to better contrast. SWIR also has excellent imaging quality in low illumination environment and moon light or star light are good emitters outdoor at night. Another primary characteristic of SWIR is high penetration, providing effective imaging under hazy conditions. An Example for night vision between SWIR.
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Wu, Yucui, Min Zhang, Xiang Xiao, and Shengdong Zhang. "Indium gallium zinc oxide - Carbon nanotube composite thin film transistor." In 2014 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC). IEEE, 2014. http://dx.doi.org/10.1109/edssc.2014.7061216.

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MacDonald, K. F., A. V. Krasavin, and N. I. Zheludev. "Gallium/aluminium nano-composite for nonlinear-optical and plasmonic switching applications." In 2006 Conference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference. IEEE, 2006. http://dx.doi.org/10.1109/cleo.2006.4628938.

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Raman, Siddhartha Raman Sundara, Shanshan Xie, and Jaydeep P.Kulkarni. "Compute-in-eDRAM with Backend Integrated Indium Gallium Zinc Oxide Transistors." In 2021 IEEE International Symposium on Circuits and Systems (ISCAS). IEEE, 2021. http://dx.doi.org/10.1109/iscas51556.2021.9401798.

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Beaudoin, Félix, Philippe Perdu, Romain Desplats, Emmanuel Doche, Alain Wislez, Thomas Beauchêne, Dean Lewis, Dominique Carisetti, David Trémouilles, and Marise Bafleur. "Laser Beam Based ESD Defect Localization in ICs." In ISTFA 2002. ASM International, 2002. http://dx.doi.org/10.31399/asm.cp.istfa2002p0543.

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Abstract The application of laser beam based techniques for ESD defect localization in silicon and gallium arsenide integrated circuits is studied. The Thermal Laser Stimulation technique (OBIRCH, TIVA) is shown to precisely localize electrostatic discharge (ESD) defects under low voltage and current consumption, thus avoiding device or defect degradation upon testing. It is also shown that nonbiased Thermal Laser Stimulation (SEI) tests can localize ESD defects in the silicon substrate. Physical analysis revealed that a thermocouple composed of molten silicon with crystalline silicon generated a Seebeck voltage sufficiently large to be detected. Finally, the pulsed Optical Beam Induced Current technique (OBIC) under no bias condition was evaluated and compared to both biased and nonbiased Thermal Laser Stimulation techniques. It proved to be complementary as it offers a different insight into the ESD induced degradation.
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Jain, Rupal, F. Patrick McCluskey, and Alison B. Flatau. "Packaging of an Iron-Gallium Nanowire Acoustic Sensor for Under-Water Applications." In ASME 2007 InterPACK Conference collocated with the ASME/JSME 2007 Thermal Engineering Heat Transfer Summer Conference. ASMEDC, 2007. http://dx.doi.org/10.1115/ipack2007-33455.

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The nanoacoustic sensor incorporates cilia-like nanowires made of galfenol, a magnetostrictive material, which responds to incoming acoustic waves by changing the magnetic flux flowing through it which is measured by a GMR sensor. A package developed for this sensor should provide a protective environment for these nanowires, while still allowing the sound waves to reach the sensing element with least attenuation. A MEMS package has been designed analogous to the cochlea in a human-ear for the nanowire acoustic sensor. Package materials have been selected for their acoustic performance in water by conducting several experiments to compare their impedance and attenuation characteristics, moisture absorption, and salt permeation properties. The package filled with silicone oil and encapsulated with polydimethylsiloxane (PDMS) is observed to outperform other packages at all frequencies in minimizing attenuation of the acoustic waves at the interface of the package. The process sequence for fabrication of the nanoacoustic sensor is presented along with the preliminary results.
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Trabia, Sarah, Viljar Palmre, and Kwang J. Kim. "Development of self-sensing Ionic Polymer-Metal Composite soft robotic actuator integrated with gallium-indium alloy." In 2015 12th International Conference on Ubiquitous Robots and Ambient Intelligence (URAI). IEEE, 2015. http://dx.doi.org/10.1109/urai.2015.7358910.

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Clarke, Joshua, and Vishnu Baba Sundaresan. "Dynamic Characterization of a Magnetoelectric Cantilever for Actuation and Sensing." In ASME 2010 Conference on Smart Materials, Adaptive Structures and Intelligent Systems. ASMEDC, 2010. http://dx.doi.org/10.1115/smasis2010-3641.

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This article continues our work to develop magnetoelectric materials as self-sensing actuators. Our research is directed at developing a two-segment cantilever device with closed-loop control. The actuator under study is fabricated as a laminated composite of the magnetostrictive material Iron-Gallium (Galfenol) and a Lead-Zirconate-Titanate piezoelectric material (PZT-5H). The mechanical and electrical characteristics of a single-segment cantilever are modeled using the equation of motion developed from variational principles in earlier work and are compared with experimental data from other groups. Additionally, parametric analysis is performed to determine the effect of varying the thickness fraction of the piezoelectric layer on the frequency response characteristics of the actuator. When applied to the dynamic behavior of the actuator, the model predicts behavior that closely resembles experimental results published by other groups. Parametric analysis of the piezoelectric layer thickness fraction indicates that the design of a magnetoelectric cantilever self-sensing actuator can be optimized by varying the thickness fraction.
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