Relevant bibliographies by topics / Compound semiconductor materials

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  1. Journal articles
  2. Dissertations / Theses
  3. Books
  4. Book chapters
  5. Conference papers
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Academic literature on the topic 'Compound semiconductor materials'

Author: Grafiati
Published: 4 June 2021
Last updated: 9 February 2022

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Journal articles on the topic "Compound semiconductor materials"

1

Masumoto, Katashi. "Compound semiconductor materials." Bulletin of the Japan Institute of Metals 26, no. 7 (1987): 734–38. http://dx.doi.org/10.2320/materia1962.26.734.

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Palmstrøm, Chris. "Epitaxial Heusler Alloys: New Materials for Semiconductor Spintronics." MRS Bulletin 28, no. 10 (2003): 725–28. http://dx.doi.org/10.1557/mrs2003.213.

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AbstractFerromagnetic materials that have Curie temperatures above room temperature, crystal structures and lattice matching compatible with compound semiconductors, and high spin polarizations show great promise for integration with semiconductor spintronics. Heusler alloys have crystal structures (fcc) and lattice parameters similar to many compound semiconductors, high spin polarization at the Fermi level, and high Curie temperatures. These properties make them particularly attractive for injectors and detectors of spin-polarized currents. This review discusses the progress and issues relat
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Gunshor, Robert L., and Arto V. Nurmikko. "II-VI Blue-Green Laser Diodes: A Frontier of Materials Research." MRS Bulletin 20, no. 7 (1995): 15–19. http://dx.doi.org/10.1557/s088376940003712x.

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The current interest in the wide bandgap II-VI semiconductor compounds can be traced back to the initial developments in semiconductor optoelectronic device physics that occurred in the early 1960s. The II-VI semiconductors were the object of intense research in both industrial and university laboratories for many years. The motivation for their exploration was the expectation that, possessing direct bandgaps from infrared to ultraviolet, the wide bandgap II-VI compound semiconductors could be the basis for a variety of efficient light-emitting devices spanning the entire range of the visible
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Liu, Zhaojun, Tongde Huang, Qiang Li, Xing Lu, and Xinbo Zou. "Compound Semiconductor Materials and Devices." Synthesis Lectures on Emerging Engineering Technologies 2, no. 3 (2016): 1–73. http://dx.doi.org/10.2200/s00695ed1v01y201601eet003.

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Strandjord, Andrew, Thorsten Teutsch, Axel Scheffler, et al. "Wafer Level Packaging of Compound Semiconductors." Journal of Microelectronics and Electronic Packaging 7, no. 3 (2010): 152–59. http://dx.doi.org/10.4071/imaps.263.

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The microelectronics industry has implemented a number of different wafer level packaging (WLP) technologies for high volume manufacturing, including: UBM deposition, solder bumping, wafer thinning, and dicing. These technologies were successfully developed and implemented at a number of contract manufacturing companies, and then licensed to many of the semiconductor manufacturers and foundries. The largest production volumes for these technologies are for silicon-based semiconductors. Continuous improvements and modifications to these WLP processes have made them compatible with the changes o
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Murakami, Masanori, Yasuo Koide, Miki Moriyama, and Susumu Tsukimoto. "Development of Electrode Materials for Semiconductor Devices." Materials Science Forum 475-479 (January 2005): 1705–14. http://dx.doi.org/10.4028/www.scientific.net/msf.475-479.1705.

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Recent strong demands for optoelectronic communication and portable telephones have encouraged engineers to develop optoelectronic devices, microwave devices, and high-speed devices using heterostructural compound semiconductors. Although the compound crystal growth techniques had reached at a level to control the compositional stoichiometry and crystal defects on a nearly atomic scale by the advanced techniques such as molecular beam epitaxy and metal organic chemical vapor deposition techniques, development of ohmic contact materials (which play a key role to inject external electric current
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Mashimo, Tsutomo. "Atomic-Scale Materials Processing under Strong Gravitational Field." Defect and Diffusion Forum 323-325 (April 2012): 517–22. http://dx.doi.org/10.4028/www.scientific.net/ddf.323-325.517.

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A strong gravitational field causes the changes in composition and structure through sedimentation or displacement of atoms in multi-component condensed matter. We have developed a high-temperature ultracentrifuge to generate a strong acceleration field of even over 1 million (1x106) G, and, for the first time succeeded in realizing the sedimentation of the constitutive solute atoms and aeven isotope atoms in solids or liquids. The changes in composition and crystalline state of various alloys, polymers, and other substances have been investigated. Recently, we started the experiments on compo
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Otoki, Yohei, and Hiroyuki Kamogawa. "Compound Semiconductor Materials for Microwave Devises." IEEJ Transactions on Electronics, Information and Systems 124, no. 2 (2004): 270–76. http://dx.doi.org/10.1541/ieejeiss.124.270.

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Lester, S. D., and B. G. Streetman. "Materials issues underlying compound semiconductor devices." Superlattices and Microstructures 2, no. 1 (1986): 33–40. http://dx.doi.org/10.1016/0749-6036(86)90150-3.

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Yonenaga, Ichiro, Koji Sumino, Gunzo Izawa, Hisao Watanabe, and Junji Matsui. "Mechanical property and dislocation dynamics of GaAsP alloy semiconductor." Journal of Materials Research 4, no. 2 (1989): 361–65. http://dx.doi.org/10.1557/jmr.1989.0361.

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The mechanical behavior of GaAsP alloy semiconductor was investigated by means of compressive deformation and compared with those of GaAs and GaP. The nature of collective motion of dislocations during deformation was determined by strain-rate cycling tests. The dynamic characteristics of dislocations in GaAsP were found to be similar to those in elemental and compound semiconductors such as Si, Ge, GaAs, and GaP. An alloy semiconductor has a component of the flow stress that is temperature-insensitive and is absent in compound semiconductors.
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Dissertations / Theses on the topic "Compound semiconductor materials"

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Seppälä, Anni. "Ion beam channeling studies of compound semiconductor materials." Helsinki : University of Helsinki, 2001. http://ethesis.helsinki.fi/julkaisut/mat/fysii/vk/seppala/.

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Williams, Howard R. "Compound semiconductor material manufacture, process improvement." Thesis, University of South Wales, 2002. https://pure.southwales.ac.uk/en/studentthesis/compound-semiconductor-material-manufacture-process-improvement(d0373158-08d9-4332-9278-f5353203dcd0).html.

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IQE (Europe) Ltd. manufactures group III/V compound semiconductor material structures, using the Metal Organic Vapour Phase Epitaxy process. The manufactured ranges of semi-conducting materials are relative to discrete or multi-compound use of Gallium Arsenide or Indium Phosphide [III/V]. For MOVPE to compete in large-scale markets, the manufacturing process requires transformation into a reliable, repeatable production process. This need is identified within the process scrap percentage of the process when benchmarked against the more mature Si-CVD process. With this wide-ranging product base
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Liddle, James Alexander. "The investigation of MOCVD layers of compound semiconductors by atom probe." Thesis, University of Oxford, 1989. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.238173.

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Yates, Rebecca Frances. "In-situ optical monitoring of compound semiconductor growth by MOCVD." Thesis, University of Salford, 1999. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.301577.

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Davies, Ryan Patrick. "Ion implantation of gadolinium in compound semiconductor materials and potential spintronic device applications." [Gainesville, Fla.] : University of Florida, 2009. http://purl.fcla.edu/fcla/etd/UFE0041092.

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McAdoo, James Alexander. "Factors affecting carrier transport in ultrafast III-V compound semiconductor based photodiodes." W&M ScholarWorks, 2000. https://scholarworks.wm.edu/etd/1539623974.

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This dissertation describes a comparative study conducted on GaAs MSM photodetectors to assess the importance of surface effects on the optical and frequency response characteristics of MSM photodetectors. MSM photodetectors on III-V compound semiconductors are technologically important because of their applications to fiber optic communication systems. While surface effects have been previously ignored, they must be considered in assessing the ultimate performance limits of such devices, especially if nanoscale MSM photodetectors are to be used. A controlled study was carried out in which hig
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Cheng, Cheng-Wei Ph D. Massachusetts Institute of Technology. "In-situ deposition of high-k dielectrics on III-V compound semiconductor in MOCVD system." Thesis, Massachusetts Institute of Technology, 2010. http://hdl.handle.net/1721.1/59216.

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Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Materials Science and Engineering, 2010.<br>Includes bibliographical references (p. 164-168).<br>In situ deposition of high-k materials to passivate the GaAs in metal organic chemical vapor deposition (MOCVD) system was well demonstrated. Both atomic layer deposition (ALD) and chemical vapor deposition (CVD) methods were applied in this research. The CVD aluminum nitride (AIN) was first selected to be in situ deposited on GaAs surface by using trimethlyaluminum(TMA) and dimethylhydrazine (DMHy). However, the frequency dispersion
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Gonzalez, Maria. "Electronic Defects of III-V Compound Semiconductor Materials Grown on Metamorphic SiGe Substrates for Photovoltaic Applications." The Ohio State University, 2009. http://rave.ohiolink.edu/etdc/view?acc_num=osu1250703650.

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Yong, Foo Nun. "LCD, low-temperature soldering and compound semiconductor : the sources, market, applications and future prospects of indium in Malaysia." Thesis, Massachusetts Institute of Technology, 2006. http://hdl.handle.net/1721.1/37376.

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Thesis (M. Eng.)--Massachusetts Institute of Technology, Dept. of Materials Science and Engineering, 2006.<br>Includes bibliographical references (leaves 88-89).<br>Indium is a minor but very valuable metal. Decreasing supplies of indium from refining and increasing demands from LCD, low-temperature soldering and compound semiconductors have stimulated the indium price increase dramatically. Traditionally, indium is refined as a by-product of zinc refining. However, this type of indium extraction method is expected to last for the next 10-20 years and this opens a window to extract indium from
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Katsube, Ryoji. "Investigation on properties of zinc phosphide related materials and interfaces for optoelectronic devices." Kyoto University, 2018. http://hdl.handle.net/2433/232037.

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Books on the topic "Compound semiconductor materials"

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Compound semiconductor bulk materials and characterizations. World Scientific, 2012.

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Compound semiconductor bulk materials and characterizations. World Scientific, 2007.

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Wu, Shiming. Compound semiconductor materials: Technology, development, and market trends. Business Communications Co. Inc, 2005.

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A, Jackson Kenneth. Compound semiconductor devices: Structures and processing. Wiley-VCH, 1998.

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Compound semiconductor radiation detectors. Taylor & Francis, 2012.

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State-of-the-Art Program on Compound Semiconductors (47th 2007 Washington, DC). State-of-the-Art Program on Compound Semiconductorss 47 (SOTAPOCS 47) and Wide Bandgap Semiconductor Materials and Devices 8. Edited by Wang J, Electrochemical Society Meeting, Electrochemical Society. Electronics and Photonics Division., Electrochemical Society. Luminescence and Display Materials Division., Electrochemical Society Sensor Division, and Symposium on Wide Bandgap Semiconductor Materials and Devices (8th : 2007 : Washington, DC). Electrochemical Society, 2007.

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State-of-the-Art, Program on Compound Semiconductors (47th 2007 Washington DC). State-of-the-Art Program on Compound Semiconductorss 47 (SOTAPOCS 47) and Wide Bandgap Semiconductor Materials and Devices 8. Electrochemical Society, 2007.

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State-of-the-Art Program on Compound Semiconductors (47th 2007 Washington, DC). State-of-the-Art Program on Compound Semiconductorss 47 (SOTAPOCS 47) and Wide Bandgap Semiconductor Materials and Devices 8. Edited by Wang J, Electrochemical Society Meeting, Electrochemical Society. Electronics and Photonics Division., Electrochemical Society. Luminescence and Display Materials Division., Electrochemical Society Sensor Division, and Symposium on Wide Bandgap Semiconductor Materials and Devices (8th : 2007 : Washington, DC). Electrochemical Society, 2007.

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State-of-the-Art Program on Compound Semiconductors (47th 2007 Washington, DC). State-of-the-Art Program on Compound Semiconductorss 47 (SOTAPOCS 47) and Wide Bandgap Semiconductor Materials and Devices 8. Edited by Wang J, Electrochemical Society Meeting, Electrochemical Society. Electronics and Photonics Division., Electrochemical Society. Luminescence and Display Materials Division., Electrochemical Society Sensor Division, and Symposium on Wide Bandgap Semiconductor Materials and Devices (8th : 2007 : Washington, DC). Electrochemical Society, 2007.

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Symposium on Nondestructive Wafer Characterization for Compound Semiconductor Materials (1995 Reno, Nevada). Proceedings of the Symposium on Nondestructive Wafer Characterization for Compound Materials and the twenty-second State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XXII). Electrochemical Society, 1995.

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Book chapters on the topic "Compound semiconductor materials"

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Nishizawa, Jun-ichi. "Stoichiometry Control of Compound Semiconductor Crystals." In Solid State Materials. Springer Berlin Heidelberg, 1991. http://dx.doi.org/10.1007/978-3-662-09935-3_19.

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Turner, J. A. "Technologies for High-Speed Compound Semiconductor ICs." In Electronic Materials. Springer US, 1991. http://dx.doi.org/10.1007/978-1-4615-3818-9_14.

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Singh, Amita, and Ajay Singh. "CHAPTER 2. Compound Semiconductor Solar Cells." In Solar Energy Capture Materials. Royal Society of Chemistry, 2019. http://dx.doi.org/10.1039/9781788013512-00056.

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Komori, Shinji, and Yushi Sakamoto. "Development Trend of Epoxy Molding Compound for Encapsulating Semiconductor Chips." In Materials for Advanced Packaging. Springer US, 2009. http://dx.doi.org/10.1007/978-0-387-78219-5_10.

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Buckley, Denis N., Elizabeth Harvey, and Sung-Nee G. Chu. "Growth of Anodic Films on Compound Semiconductor Electrodes: InP in Aqueous (NH4)2S." In Nanostructured Materials. Springer Vienna, 2002. http://dx.doi.org/10.1007/978-3-7091-6740-3_4.

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Sasajima, Hideaki, Itaru Watanabe, Makoto Takamoto, et al. "New Development Trend of Epoxy Molding Compound for Encapsulating Semiconductor Chips." In Materials for Advanced Packaging. Springer International Publishing, 2016. http://dx.doi.org/10.1007/978-3-319-45098-8_9.

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Cho, A. Y. "Recent Developments in III-V Compound Semiconductor Materials and Devices." In Proceedings of the 17th International Conference on the Physics of Semiconductors. Springer New York, 1985. http://dx.doi.org/10.1007/978-1-4615-7682-2_345.

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Otsuji, Taiichi, Victor Ryzhii, Stephane Boubanga Tombet, et al. "Terahertz Wave Generation Using Graphene and Compound Semiconductor Nano-Heterostructures." In Nanoscale Materials and Devices for Electronics, Photonics and Solar Energy. Springer International Publishing, 2015. http://dx.doi.org/10.1007/978-3-319-18633-7_7.

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Xu, B., Z. G. Wang, Y. H. Chen, P. Jin, X. L. Ye, and Feng Qi Liu. "Controlled Growth of III-V Compound Semiconductor Nano-Structures and Their Application in Quantum-Devices." In Materials Science Forum. Trans Tech Publications Ltd., 2005. http://dx.doi.org/10.4028/0-87849-960-1.1783.

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Piccirillo, A., and P. E. Bagnoli. "Electrical Characteristics of PECVD Silicon Nitride / Compound Semiconductor Interfaces for Optoelectronic Device Passivation." In Crucial Issues in Semiconductor Materials and Processing Technologies. Springer Netherlands, 1992. http://dx.doi.org/10.1007/978-94-011-2714-1_9.

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Conference papers on the topic "Compound semiconductor materials"

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Joyce, H. J., S. Paiman, Q. Gao, et al. "III-V compound semiconductor nanowires." In 2009 IEEE Nanotechnology Materials and Devices Conference (NMDC). IEEE, 2009. http://dx.doi.org/10.1109/nmdc.2009.5167572.

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Iino, Hiroaki. "Liquid Crystals as Polycrystalline Materials for Organic Thin Film Transistors." In 2019 Compound Semiconductor Week (CSW). IEEE, 2019. http://dx.doi.org/10.1109/iciprm.2019.8819026.

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He, Xing, Yoshiki Yamaguchi, Toshiro Kaneko, and Toshiaki Kato. "Fabrication of Transparent Solar Cell with Atomically Thin Layered Materials." In 2019 Compound Semiconductor Week (CSW). IEEE, 2019. http://dx.doi.org/10.1109/iciprm.2019.8819224.

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Stillman, G. E., S. S. Bose, and A. P. Curtis. "Photoluminescence characterization of compound semiconductor optoelectronic materials." In Advanced processing and characterization technologies. AIP, 1991. http://dx.doi.org/10.1063/1.40661.

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Nakano, Masaki, and Yoshihiro Iwasa. "Emergent transport phenomena in MBE-grown 2D materials and their heterostructures." In 2019 Compound Semiconductor Week (CSW). IEEE, 2019. http://dx.doi.org/10.1109/iciprm.2019.8819228.

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Fu, Kai, Houqiang Fu, Hanxiao Liu, et al. "1.2 kV regrown GaN vertical p-n power diodes with ultra low leakage using advanced materials engineering." In 2019 Compound Semiconductor Week (CSW). IEEE, 2019. http://dx.doi.org/10.1109/iciprm.2019.8819081.

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Ye, Peide D. "Device Perspective on 2D Materials." In 2014 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS). IEEE, 2014. http://dx.doi.org/10.1109/csics.2014.6978548.

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Fukui, Takashi, Eiji Nakai, MuYi Chen, and Katsuhiro Tomioka. "III-V Compound Semiconductor Nanowire Solar Cells." In Optical Nanostructures and Advanced Materials for Photovoltaics. OSA, 2014. http://dx.doi.org/10.1364/pv.2014.pw3c.2.

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Rosker, Mark J., Viktoria Greanya, and Tsu-Hsi Chang. "The DARPA COmpound Semiconductor Materials On Silicon (COSMOS) Program." In 2008 IEEE Compound Semiconductor Integrated Circuits Symposium (CSICS). IEEE, 2008. http://dx.doi.org/10.1109/csics.2008.6.

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Sandhu, Rajinder, Vincent Gambin, Benjamin Poust, et al. "Diamond Materials for GaN HEMT near Junction Heat Removal." In 2012 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS). IEEE, 2012. http://dx.doi.org/10.1109/csics.2012.6340119.

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Reports on the topic "Compound semiconductor materials"

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Twist, James R. Contributive Research in Compound Semiconductor Material and Related Devices. Defense Technical Information Center, 1988. http://dx.doi.org/10.21236/ada202586.

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