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Dissertations / Theses on the topic 'Compound semiconductor materials'

Author: Grafiati

Published: 4 June 2021

Last updated: 9 February 2022

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1

Seppälä, Anni. "Ion beam channeling studies of compound semiconductor materials." Helsinki : University of Helsinki, 2001. http://ethesis.helsinki.fi/julkaisut/mat/fysii/vk/seppala/.

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2

Williams, Howard R. "Compound semiconductor material manufacture, process improvement." Thesis, University of South Wales, 2002. https://pure.southwales.ac.uk/en/studentthesis/compound-semiconductor-material-manufacture-process-improvement(d0373158-08d9-4332-9278-f5353203dcd0).html.

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IQE (Europe) Ltd. manufactures group III/V compound semiconductor material structures, using the Metal Organic Vapour Phase Epitaxy process. The manufactured ranges of semi-conducting materials are relative to discrete or multi-compound use of Gallium Arsenide or Indium Phosphide [III/V]. For MOVPE to compete in large-scale markets, the manufacturing process requires transformation into a reliable, repeatable production process. This need is identified within the process scrap percentage of the process when benchmarked against the more mature Si-CVD process. With this wide-ranging product base

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3

Liddle, James Alexander. "The investigation of MOCVD layers of compound semiconductors by atom probe." Thesis, University of Oxford, 1989. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.238173.

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4

Yates, Rebecca Frances. "In-situ optical monitoring of compound semiconductor growth by MOCVD." Thesis, University of Salford, 1999. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.301577.

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5

Davies, Ryan Patrick. "Ion implantation of gadolinium in compound semiconductor materials and potential spintronic device applications." [Gainesville, Fla.] : University of Florida, 2009. http://purl.fcla.edu/fcla/etd/UFE0041092.

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6

McAdoo, James Alexander. "Factors affecting carrier transport in ultrafast III-V compound semiconductor based photodiodes." W&M ScholarWorks, 2000. https://scholarworks.wm.edu/etd/1539623974.

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This dissertation describes a comparative study conducted on GaAs MSM photodetectors to assess the importance of surface effects on the optical and frequency response characteristics of MSM photodetectors. MSM photodetectors on III-V compound semiconductors are technologically important because of their applications to fiber optic communication systems. While surface effects have been previously ignored, they must be considered in assessing the ultimate performance limits of such devices, especially if nanoscale MSM photodetectors are to be used. A controlled study was carried out in which hig

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7

Cheng, Cheng-Wei Ph D. Massachusetts Institute of Technology. "In-situ deposition of high-k dielectrics on III-V compound semiconductor in MOCVD system." Thesis, Massachusetts Institute of Technology, 2010. http://hdl.handle.net/1721.1/59216.

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Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Materials Science and Engineering, 2010.<br>Includes bibliographical references (p. 164-168).<br>In situ deposition of high-k materials to passivate the GaAs in metal organic chemical vapor deposition (MOCVD) system was well demonstrated. Both atomic layer deposition (ALD) and chemical vapor deposition (CVD) methods were applied in this research. The CVD aluminum nitride (AIN) was first selected to be in situ deposited on GaAs surface by using trimethlyaluminum(TMA) and dimethylhydrazine (DMHy). However, the frequency dispersion

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8

Gonzalez, Maria. "Electronic Defects of III-V Compound Semiconductor Materials Grown on Metamorphic SiGe Substrates for Photovoltaic Applications." The Ohio State University, 2009. http://rave.ohiolink.edu/etdc/view?acc_num=osu1250703650.

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9

Yong, Foo Nun. "LCD, low-temperature soldering and compound semiconductor : the sources, market, applications and future prospects of indium in Malaysia." Thesis, Massachusetts Institute of Technology, 2006. http://hdl.handle.net/1721.1/37376.

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Thesis (M. Eng.)--Massachusetts Institute of Technology, Dept. of Materials Science and Engineering, 2006.<br>Includes bibliographical references (leaves 88-89).<br>Indium is a minor but very valuable metal. Decreasing supplies of indium from refining and increasing demands from LCD, low-temperature soldering and compound semiconductors have stimulated the indium price increase dramatically. Traditionally, indium is refined as a by-product of zinc refining. However, this type of indium extraction method is expected to last for the next 10-20 years and this opens a window to extract indium from

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10

Katsube, Ryoji. "Investigation on properties of zinc phosphide related materials and interfaces for optoelectronic devices." Kyoto University, 2018. http://hdl.handle.net/2433/232037.

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11

Krishnamurthy, Nicole Andrea. "Mixed material integration for high speed applications." Diss., Georgia Institute of Technology, 1998. http://hdl.handle.net/1853/14684.

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12

Sedhain, Ashok. "Optical properties of ALN and deep UV photonic structures studied by photoluminescence." Diss., Kansas State University, 2011. http://hdl.handle.net/2097/8522.

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Doctor of Philosophy<br>Department of Physics<br>Jingyu Lin<br>Time-resolved deep ultraviolet (DUV) Photoluminescence (PL) spectroscopy system has been employed to systematically monitor crystalline quality, identify the defects and impurities, and investigate the light emission mechanism in III-nitride semiconducting materials and photonic structures. A time correlated single photon counting system and streak camera with corresponding time resolutions of 20 and 2 ps, respectively, were utilized to study the carrier excitation and recombination dynamics. A closed cycle He-flow cryogenic system

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13

Ellin, Hannah Catherine. "Aspects of wave interactions in photorefractive materials." Thesis, University of Oxford, 1994. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.296992.

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14

Lui, Mei-ki Pattie. "Acceptor defects in P-type gallium antimonide materials." Click to view the E-thesis via HKUTO, 2005. http://sunzi.lib.hku.hk/hkuto/record/B31648368.

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15

Lui, Mei-ki Pattie, and 雷美琪. "Acceptor defects in P-type gallium antimonide materials." Thesis, The University of Hong Kong (Pokfulam, Hong Kong), 2005. http://hub.hku.hk/bib/B31648368.

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16

Shojaei, Borzoyeh. "Antimonide-Based Compound Semiconductors for Quantum Computing." Thesis, University of California, Santa Barbara, 2017. http://pqdtopen.proquest.com/#viewpdf?dispub=10195560.

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<p> Quantum information science has made significant progress over the last several decades, but the eventual form a quantum computer will take has yet to be determined. Several physical systems have been shown to operate as quantum bits, or qubits, but each faces a central challenge: the qubit must be sufficiently isolated from its environment to maintain quantum coherence while simultaneously having sufficient coupling to the environment to allow quantum mechanical interactions for manipulation and measurement. An approach to achieve these conflicting requirements is to create qubits that ar

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17

Stark, Thomas S. "Picosecond Dynamics of Free-Carrier Populations, Space-Charge Fields, and Photorefractive Nonlinearities in Zincblende Semiconductors." Thesis, University of North Texas, 1999. https://digital.library.unt.edu/ark:/67531/metadc2202/.

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Generally, nonlinear optics studies investigate optically-induced changes in refraction or absorption, and their application to spectroscopy or device fabrication. The photorefractive effect is a nonlinear optical effect that occurs in solids, where transport of an optically-induced free-carrier population results in an internal space-charge field, which produces an index change via the linear electrooptic effect. The photorefractive effect has been widely studied for a variety of materials and device applications, mainly because it allows large index changes to be generated with laser beams h

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18

Theys, Bertrand. "Photoelectrochimie du seleniure d'indium." Paris 7, 1987. http://www.theses.fr/1987PA077165.

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19

Hoshino, Isako. "Hyperthermal molecular beam dry etching of III-V compound semiconductors." Thesis, Massachusetts Institute of Technology, 1997. http://hdl.handle.net/1721.1/43365.

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20

Ruterana, Pierre. "Structure des interfaces, etude par microscopie electronique en transmission, application : materiaux semiconduteurs iii-v et multicouches pour optiques dans le domaine des rayons x mous." Caen, 1987. http://www.theses.fr/1987CAEN2032.

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Nous avons surtout utilise le mode "haute resolution" sur un microscope a 200kv. La resolution obtenue etait de 2. 4 a. La technique de peparation d'echantillons que nous avons mise au point pour l'etude du procede de passivation (si::(3)n::(4)/gaas) nous a permis de caracteriser dans de tres bonnes conditions les multicouches pour rayons x mous et les heterostructures de croissance epitaxiale. Ce travail fut un suivi des procedes en conjugaison avec d'autres techniques de caracterisation. La comparaison des resultats de ces diverses techniques nous a permis d'apprehender la chimie et la physi

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21

Botha, Lindsay. "Towards the development of InAs/GaInSb strained-layer superlattices for infrared detection." Thesis, Nelson Mandela Metropolitan University, 2008. http://hdl.handle.net/10948/713.

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This study focuses on the development of InAs/GaInSb strained-layer superlattice structures by metal organic chemical vapour deposition (MOCVD), and deals with two aspects of the development of InAs/GaInSb SLS’s by MOCVD viz. the deposition of nano-scale (~100 Å) GaInSb layers, and the electrical characterization of unstrained InAs. The first part of this work aims to study the MOCVD growth of GaInSb layers in terms of deposition rate and indium incorporation on the nano-scale. This task is approached by first optimizing the growth of relatively thick (~2 μm) epitaxial films, and then assuming

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22

Miya, Senzo Simo. "Atmospheric pressure metal-organic vapour phase epitaxial growth of InAs/GaSb strained layer superlattices." Thesis, Nelson Mandela Metropolitan University, 2013. http://hdl.handle.net/10948/d1020866.

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The importance of infrared (IR) technology (for detection in the 3-5 μm and 8-14 μm atmospheric windows) has spread from military applications to civilian applications since World War II. The commercial IR detector market in these wavelength ranges is dominated by mercury cadmium telluride (MCT) alloys. The use of these alloys has, however, been faced with technological difficulties. One of the materials that have been tipped to be suitable to replace MCT is InAs/InxGa1-xSb strained layer superlattices (SLS’s). Atmospheric pressure metal-organic vapour phase epitaxy (MOVPE) has been used to gr

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23

Horsburgh, Gordon. "MBE growth and characterisation of II-VI semiconductor materials and devices." Thesis, Heriot-Watt University, 1997. http://hdl.handle.net/10399/1256.

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24

Leung, Yee-pan. "A study on the fabrication and applications of quasi-one-dimensional zinc selenide nanostructures." Click to view the E-thesis via HKUTO, 2007. http://sunzi.lib.hku.hk/hkuto/record/B39848942.

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25

Farhoudi, Mohammad Mehdi. "Studies of structures, transport and magnetic properties of doped novel three-dimensional perovskite compounds." Institute for Superconducting and Electronic Materials - Faculty of Engineering, 2009. http://ro.uow.edu.au/theses/3047.

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Perovskite oxide compounds have generated a great amount of interest over the past twenty years, as they exhibit exotic magnetic, electric, and magnetoelectric properties, which, apart from their intrinsic interest, would have a wide range of applications in industry, with special utilization in the engineering of data storage devices.Starting with a general definition of the perovskite structure of ABO3 materials, the magnetic and transport properties of cobalt and manganese based compounds are reviewed. The objective of this thesis is focused on the investigation of the structures, and the m

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26

Tong, Ka Lap. "Electrical and optical properties of triphenylamine-based compounds and devices." HKBU Institutional Repository, 2006. http://repository.hkbu.edu.hk/etd_ra/718.

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27

HAMID-SAMIMI, MOHAMMAD-HASSAN. "Etude et caracterisation des defauts microscopiques du tellure de cadmium." Strasbourg 1, 1989. http://www.theses.fr/1989STR13009.

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Les niveaux des defauts dans la bande interdite du semiconducteur sont etudies ainsi que les phenomenes de transport et les proprietes optiques. On note des effets remarquables de passivation et de modification des defauts par hydrogenation

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28

Kramer, Illan. "Fabrication and characterization of a hybrid heterojunction composed of N-type silicon and PEDOT:PSS." Thesis, McGill University, 2006. http://digitool.Library.McGill.CA:80/R/?func=dbin-jump-full&object_id=99774.

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A hybrid organic/inorganic heterojunction has been fabricated using an n-type silicon wafer (< 111 >, 3 < ρ < 6 Ω · cm) and a p-type polymer, PEDOT:PSS (ρ = 1 Ω · cm). Standard fabrication techniques such as vacuum deposition and spin coating are required for fabrication and have been employed. I-V characteristics have been measured under both dark and illuminated conditions for different thicknesses of PEDOT:PSS as defined by the spin rate at which the polymer has been spin coated. The data has been analyzed and figures of merit such as series resistance, short circuit current, open circuit v

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29

Ramanujachar, Kartik. "Diffusion studies in InGaAs/GaAs and AIGaAs/GaAs quantum well structures /." *McMaster only, 1998.

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30

Zhao, Yu. "Growth and optical characterization of Sb-based materials on InP for optical telecommunication." Thesis, Rennes, INSA, 2014. http://www.theses.fr/2014ISAR0002/document.

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Ce travail de thèse porte sur la croissance et sur la caractérisation optique de nanostructures à base d’antimoine sur substrats InP, en vue d’applications dans le domaine des télécommunications optiques. La transition inter-sous-bande est un processus ultrarapide qui permet la modulation de la lumière dans les réseaux de télécommunication optique. Durant cette thèse, une absorption inter-sous-bande dans le proche-infrarouge provenant de puits quantiques Ga0.47In0.53As/AlAs0.56Sb0.44 a été observée pour la première fois au laboratoire. Les analyses par microscopie électronique à effet tunnel s

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31

Leung, Yee-pan, and 梁懿斌. "A study on the fabrication and applications of quasi-one-dimensional zinc selenide nanostructures." Thesis, The University of Hong Kong (Pokfulam, Hong Kong), 2007. http://hub.hku.hk/bib/B39848942.

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32

Hardaway, Harvey Royston. "Spectroscopic studies of InAs/InAsSb heterostructure light-emitting diodes for the mid-infrared region." Thesis, Imperial College London, 2000. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.322199.

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33

Gillardin, Gérard. "Mise au point d'un appareillage de photoluminescence a haute resolution spatiale : application a l'etude des semiconducteurs et dispositifs electroniques iii-v." Clermont-Ferrand 2, 1988. http://www.theses.fr/1988CLF2D216.

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Description du dispositif permettant d'analyser des plaques de 2**(") de diametre a 1ok, avec de hautes resolutions laterales (20 et 1mu m), eventuellement a diverses energies. Realisation de cartographies a 300 et 10k: tres bonne correlation entre intensite de photoluminescence et defauts cristallins et chimiques; correspondance avec des mesures de resistivite electrique. Mise au point d'une procedure de qualification de l'homogeneite microscopique de gaas semi-isolant. Possibilite de prevoir la dispersion des tensions de seuil de transistors fet d'apres l'analyse du support de defaut, donc d

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34

Nakatsuka, Shigeru. "Fabrication of bulk crystal and thin film of Ⅱ-Ⅳ-Ⅴ2 type compound semiconductor ZnSnP2 for photovoltaic application." 京都大学 (Kyoto University), 2017. http://hdl.handle.net/2433/225559.

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35

Kaspar, Tiffany C. "Materials and magnetic studies of cobalt-doped anatase titanium dioxide and perovskite strontium titanate as potential dilute magnetic semiconductors /." Thesis, Connect to this title online; UW restricted, 2004. http://hdl.handle.net/1773/9902.

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36

Cherchour, Mustapha. "Etude de la production d'ions hydrogène lents et de leur interaction avec les surfaces clivées de semi-conducteurs (GaAs, InP)." Paris 6, 1986. http://www.theses.fr/1986PA066202.

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Une cellule d'excitation utilisant le bombardement électronique des molécules d'un gaz a été mise au point pour servir de source d'ions dans les études et les traitements de surface de semi-conducteurs sous ultravide. Elle communique avec l'enceinte principale par un trou de petit diamètre et fournit un flux directif d'ions de faible énergie. Cette cellule a été utilisée pour étudier, par spectroscopie de rendement de photoémission au seuil, l'interaction d'ions H2+ avec la surface (110) clivée de GaAs et InP. Un phénomène caractéristique de ces surfaces fortement hydrogénées a permis de mettr

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37

Vaughan, Thomas Alexander. "Magneto-optics of InAs/GaSb heterostructures." Thesis, University of Oxford, 1995. http://ora.ox.ac.uk/objects/uuid:52b3d4c8-04f2-4ee8-b5a5-382934807722.

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The optical properties of InAs/GaSb heterostructures under applied magnetic fields are studied in experimental and theoretical detail. The InAs/GaSb system is a type-II "crossed-gap" system, where the valence band edge of GaSb lies higher in energy than the conduction band edge of InAs. This leads to a region of energy above the InAs conduction band where conduction and hole states mix. Thin-layer superlattices remain semiconducting due to confinement effects, but thick-layer superlattices experience charge transfer which leads to intrinsic carrier densities approaching 10<sup>12</sup> cm<sup>

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38

Kessler, John. "Etude photoelectrochimique des alliages cuin::(1-x)ga::(x)se::(2) : relation entre les proprietesphotovoltaiques des couches minces de cugase::(2) et leur composition." Paris 7, 1988. http://www.theses.fr/1988PA077189.

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L'etude des echantillons massifs de cuin::(1-x)ga::(x)se::(2) de type p permet de mettre au point la solution electrolytique acide en presence du couple redix v**(2+/3+). Etude des positions energetiques des bandes par mesures capacitives. Etude de la variation de la bande interdite en fonction de x et mesure des longueurs de diffusion par l'evolution du photocourant en fonction du potentiel. Etude des proprietes optiques et electroniques des couches minces cugase::(2) de type p en fonction des ecarts a la stoechiometrie

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39

De, Souza Roberto Fernando. "Etude des reactions d'oligomerisation, isomerisation et polymerisation de substrats insatures catalysees par des complexes allyle cationiques du nickel." Toulouse 3, 1987. http://www.theses.fr/1987TOU30152.

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Oligomerisation de l'ethylene. Mecanisme de l'isomerisation des olefines superieures en presence des complexes du titre. Polymerisation catalytique d'autres substrats insatures : styrene, dienes, alcynes. . . La polymerisation du phenylacetylene a ete etudiee en detail car elle conduit a des materiaux semiconducteurs a l'etat non dope

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40

Sugiura, Kenji, Hiromichi Ohta, Shin-ichi Nakagawa, et al. "Anisotropic carrier transport properties in layered cobaltate epitaxial films grown by reactive solid-phase epitaxy." American Institite of Physics, 2009. http://hdl.handle.net/2237/12628.

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41

Lassalle, Francis. "Conception et mise en oeuvre d'un reacteur d'epitaxie gainas/inp par la methode aux hydrures, analyse des conditions de croissance." Clermont-Ferrand 2, 1987. http://www.theses.fr/1987CLF2D193.

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Reacteur permettant la croissance de couches epitaxiques dans le systeme (ga,in,as,p) par transport en phase vapeur et par la methode aux hydrures (ph::(3),ash::(3),h::(2),hcl,in,ga). Sa conception autorise la realisation d'heterostructures a interfaces abruptes en conservant une geometrie de reacteur monochambre. Analyse des conditions de croissance du ternaire gainas sur support inp (100). Mise en evidence de l'effet du non equilibre entre les especes as::(2) et as::(4) sur la presence d'un depot parasite en amont de l'echantillon et sur les caracteristiques du depot. Proposition d'un modele

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42

Anger, Sabrina. "Potential and challenges of compound semiconductor characterization by application of non-contacting characterization techniques." Doctoral thesis, Technische Universitaet Bergakademie Freiberg Universitaetsbibliothek "Georgius Agricola", 2016. http://nbn-resolving.de/urn:nbn:de:bsz:105-qucosa-201487.

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Trotz der im Vergleich zu Silizium überragenden elektronischen Eigenschaften von Verbindungshalbleitern, ist die Leistung der daraus gefertigten elektrischen Bauelemente aufgrund der vorhandenen, die elektronischen Materialeigenschaften beeinflussenden Defekte nach wie vor begrenzt. Die vorliegende Arbeit trägt dazu bei, das bestehende ökonomische Interesse an einem besseren Verständnis der die Bauelementeleistung limitierenden Defekte zu befriedigen, indem sie die Auswirkungen dieser Defekte auf die elektronischen und optischen Materialeigenschaften von Indiumphosphid (InP) und Siliziumkarbid

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43

Lakhdari, Hacène. "Etude par technique spectroscopique de capacite transitoire des defauts a l'interface semiconducteur-isolant." Paris 6, 1988. http://www.theses.fr/1988PA066341.

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Explication du comportement inhabituel de certaines structures mos en dlts (non-saturation du spectre dlts pour un remplissage total de la densite d'etats d'interface) par une interaction par effet tunnel entre les porteurs libres du semiconducteur et les defauts des premieres couches d'oxyde (etats lents). Etude de la degradation des interfaces si-sio::(2) sous injection d'electrons chauds en comparant la cinetique de creation des etats lents et rapides. Etude des defauts induits par plasma ionique reactif

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44

Guergouri, Kamel. "Etude des defauts cristallins et des proprietes physiques associees dans cdte et ses alliages avec znte, mnte." Paris 6, 1987. http://www.theses.fr/1987PA066412.

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Etude de l'amelioration de cdte dans le cadre de la recherche de semiconducteurs de bonne qualite cristalline. Le premier parametre necessaire a cette amelioration et celui de la substitution de cd par zn (impurete isoelectronique et permet la reduction de la densite de dislocations d'un facteur 10. Proposition d'un modele de durcissement d'alliage pour expliquer ce phenomene. Le 2eme parametre concerne la recherche des conditions de croissance optimales

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45

SENCE, MARTINE. "Etude des proprietes optiques du seleniure de cadmium sous hautes intensites d'excitation lumineuse." Université Louis Pasteur (Strasbourg) (1971-2008), 1989. http://www.theses.fr/1989STR13021.

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Etude des caracteristiques du plasma electron-trou. Interpretation des courbes de gain optique obtenues par deux modeles theoriques. Etude des proprietes des biexcitons par melange degenere a quatre ondes et determination de leur energie de liaison (2 mev)

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46

Moudgil, Karttikay. "Design and development of dimeric sandwich compounds as n-dopants for organic electronics." Diss., Georgia Institute of Technology, 2016. http://hdl.handle.net/1853/54958.

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Electrical doping of organic semiconductors with molecular oxidants (p-type) or reductants (n-type) can greatly improve charge injection and conductivity in devices. Simple one electron reductants that are capable of reducing most electron-transport materials will inevitably also be sensitive to reaction with oxygen. Coupling electron transfer step with bond breaking/ making processes in principle can address this problem. The rhodocene dimer and related ruthenium and iridium dimeric sandwich compounds have been discussed as example of such n-dopants, reducing a variety of organic semiconducto

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47

Osman, Sarah Omer Siddig. "Surface roughness of InP after N+2 bombardment : Ion areic dose dependence." Diss., University of Pretoria, 2004. http://hdl.handle.net/2263/24608.

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48

Gourgon, Cécile. "Fabrication et caractérisation optique de fils et boites quantiques CdTe/CdZnTe." Université Joseph Fourier (Grenoble), 1995. http://www.theses.fr/1995GRE10145.

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Un certain nombre de techniques ont ete developpees ces dernieres annees pour fabriquer des nanostructures quantiques, principalement dans le domaine des semiconducteurs iii-v. Nous avons realise des fils et des boites quantiques de semiconducteurs ii-vi, a partir de puits quantiques cdte/cdznte, soit par nanolithographie et gravure de structures 2d, soit directement par epitaxie par jets moleculaires avec une croissance en deux etapes. Les proprietes optiques de ces nanostructures ont ete etudiees en photoluminescence a basse temperature (2k). Dans la premiere approche, les nanostructures ont

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49

Hoffman, Timothy B. "Optimization and characterization of bulk hexagonal boron nitride single crystals grown by the nickel-chromium flux method." Diss., Kansas State University, 2016. http://hdl.handle.net/2097/32797.

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Doctor of Philosophy<br>Department of Chemical Engineering<br>James H. Edgar<br>Hexagonal boron nitride (hBN) is a wide bandgap III-V semiconductor that has seen new interest due to the development of other III-V LED devices and the advent of graphene and other 2-D materials. For device applications, high quality, low defect density materials are needed. Several applications for hBN crystals are being investigated, including as a neutron detector and interference-less infrared-absorbing material. Isotopically enriched crystals were utilized for enhanced propagation of phonon modes. These appli

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50

Lemoine, Pascale. "Combinaisons ternaires soufrées formées par l'europium et un second métal : exemples de dérivés de l'europium à valence mixte; synthèse, structures et propriétés physiques." Paris 6, 1986. http://www.theses.fr/1986PA066416.

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Abstract:

L'études des combinaisons ternaires soufrées formées par l'europium et un second métal conduit dans de nombreux cas a des composes qui ne contiennent que de l'europium divalent, tels que Eu3Sb4S9, EuLn2S4 (Ln: Dy—Lu, Y) et Eu1,1Bi2S4. . Dans ces trois composes Eu (ii) présente un environnement 8-prismatique et le second métal, un environnement octaédrique. Dans Eu3Sb4S9, le doublet 5s2 non-engagé de Sb (iii) crée de larges tunnels au sein de la structure. Les composés EuLn2S4 ont une structure de type CaFe2O4. Le réseau du composé Eu1, 1Bi2S4 contient de larges canaux partiellement occupés par

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