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Journal articles on the topic 'Compound semiconductor materials'

Author: Grafiati

Published: 4 June 2021

Last updated: 9 February 2022

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1

Masumoto, Katashi. "Compound semiconductor materials." Bulletin of the Japan Institute of Metals 26, no. 7 (1987): 734–38. http://dx.doi.org/10.2320/materia1962.26.734.

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2

Palmstrøm, Chris. "Epitaxial Heusler Alloys: New Materials for Semiconductor Spintronics." MRS Bulletin 28, no. 10 (2003): 725–28. http://dx.doi.org/10.1557/mrs2003.213.

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AbstractFerromagnetic materials that have Curie temperatures above room temperature, crystal structures and lattice matching compatible with compound semiconductors, and high spin polarizations show great promise for integration with semiconductor spintronics. Heusler alloys have crystal structures (fcc) and lattice parameters similar to many compound semiconductors, high spin polarization at the Fermi level, and high Curie temperatures. These properties make them particularly attractive for injectors and detectors of spin-polarized currents. This review discusses the progress and issues relat

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3

Gunshor, Robert L., and Arto V. Nurmikko. "II-VI Blue-Green Laser Diodes: A Frontier of Materials Research." MRS Bulletin 20, no. 7 (1995): 15–19. http://dx.doi.org/10.1557/s088376940003712x.

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The current interest in the wide bandgap II-VI semiconductor compounds can be traced back to the initial developments in semiconductor optoelectronic device physics that occurred in the early 1960s. The II-VI semiconductors were the object of intense research in both industrial and university laboratories for many years. The motivation for their exploration was the expectation that, possessing direct bandgaps from infrared to ultraviolet, the wide bandgap II-VI compound semiconductors could be the basis for a variety of efficient light-emitting devices spanning the entire range of the visible

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4

Liu, Zhaojun, Tongde Huang, Qiang Li, Xing Lu, and Xinbo Zou. "Compound Semiconductor Materials and Devices." Synthesis Lectures on Emerging Engineering Technologies 2, no. 3 (2016): 1–73. http://dx.doi.org/10.2200/s00695ed1v01y201601eet003.

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5

Strandjord, Andrew, Thorsten Teutsch, Axel Scheffler, et al. "Wafer Level Packaging of Compound Semiconductors." Journal of Microelectronics and Electronic Packaging 7, no. 3 (2010): 152–59. http://dx.doi.org/10.4071/imaps.263.

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The microelectronics industry has implemented a number of different wafer level packaging (WLP) technologies for high volume manufacturing, including: UBM deposition, solder bumping, wafer thinning, and dicing. These technologies were successfully developed and implemented at a number of contract manufacturing companies, and then licensed to many of the semiconductor manufacturers and foundries. The largest production volumes for these technologies are for silicon-based semiconductors. Continuous improvements and modifications to these WLP processes have made them compatible with the changes o

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6

Murakami, Masanori, Yasuo Koide, Miki Moriyama, and Susumu Tsukimoto. "Development of Electrode Materials for Semiconductor Devices." Materials Science Forum 475-479 (January 2005): 1705–14. http://dx.doi.org/10.4028/www.scientific.net/msf.475-479.1705.

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Recent strong demands for optoelectronic communication and portable telephones have encouraged engineers to develop optoelectronic devices, microwave devices, and high-speed devices using heterostructural compound semiconductors. Although the compound crystal growth techniques had reached at a level to control the compositional stoichiometry and crystal defects on a nearly atomic scale by the advanced techniques such as molecular beam epitaxy and metal organic chemical vapor deposition techniques, development of ohmic contact materials (which play a key role to inject external electric current

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7

Mashimo, Tsutomo. "Atomic-Scale Materials Processing under Strong Gravitational Field." Defect and Diffusion Forum 323-325 (April 2012): 517–22. http://dx.doi.org/10.4028/www.scientific.net/ddf.323-325.517.

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A strong gravitational field causes the changes in composition and structure through sedimentation or displacement of atoms in multi-component condensed matter. We have developed a high-temperature ultracentrifuge to generate a strong acceleration field of even over 1 million (1x106) G, and, for the first time succeeded in realizing the sedimentation of the constitutive solute atoms and aeven isotope atoms in solids or liquids. The changes in composition and crystalline state of various alloys, polymers, and other substances have been investigated. Recently, we started the experiments on compo

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8

Otoki, Yohei, and Hiroyuki Kamogawa. "Compound Semiconductor Materials for Microwave Devises." IEEJ Transactions on Electronics, Information and Systems 124, no. 2 (2004): 270–76. http://dx.doi.org/10.1541/ieejeiss.124.270.

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9

Lester, S. D., and B. G. Streetman. "Materials issues underlying compound semiconductor devices." Superlattices and Microstructures 2, no. 1 (1986): 33–40. http://dx.doi.org/10.1016/0749-6036(86)90150-3.

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10

Yonenaga, Ichiro, Koji Sumino, Gunzo Izawa, Hisao Watanabe, and Junji Matsui. "Mechanical property and dislocation dynamics of GaAsP alloy semiconductor." Journal of Materials Research 4, no. 2 (1989): 361–65. http://dx.doi.org/10.1557/jmr.1989.0361.

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The mechanical behavior of GaAsP alloy semiconductor was investigated by means of compressive deformation and compared with those of GaAs and GaP. The nature of collective motion of dislocations during deformation was determined by strain-rate cycling tests. The dynamic characteristics of dislocations in GaAsP were found to be similar to those in elemental and compound semiconductors such as Si, Ge, GaAs, and GaP. An alloy semiconductor has a component of the flow stress that is temperature-insensitive and is absent in compound semiconductors.

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11

DELGADO, Gerzon E., P. DELGADO-NIÑO, and P. GRIMA-GALLARDO. "CRYSTAL STRUCTURE OF THE QUATERNARY SEMICONDUCTOR COMPOUND CuFeCrSe3." Periódico Tchê Química 16, no. 32 (2019): 848–53. http://dx.doi.org/10.52571/ptq.v16.n32.2019.866_periodico32_pgs_848_853.pdf.

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The compounds with ternary structures of the chalcopyrite family Cu-III-Se2 (III = Al, Ga, In, Cr) form a wide group of semiconductor materials with diverse optical and electrical properties, and the addition of FeSe binary compound produces alloys of the type (Cu-III-Se2)1-x(Fe-Se)x. These types of materials have received increasing attention as promising thermoelectric materials due to their high efficiency, tunable transport properties, high elemental abundance and low toxicity. This work aims to synthesize and characterize structurally a new material belonging to this semiconductor system

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12

Sands, T. "Compound semiconductor contact metallurgy." Materials Science and Engineering: B 1, no. 3-4 (1988): 289–312. http://dx.doi.org/10.1016/0921-5107(88)90010-4.

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13

Chen, Zongbin, Habib Rozale, Yongchun Gao, and Heju Xu. "Strain Control of the Tunable Physical Nature of a Newly Designed Quaternary Spintronic Heusler Compound ScFeRhP." Applied Sciences 8, no. 9 (2018): 1581. http://dx.doi.org/10.3390/app8091581.

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Recently, an increasing number of rare-earth-based equiatomic quaternary compounds have been reported as promising novel spintronic materials. The rare-earth-based equiatomic quaternary compounds can be magnetic semiconductors (MSs), spin-gapless semiconductors (SGSs), and half-metals (HMs). Using first-principle calculations, we investigated the crystal structure, density of states, band structure, and magnetic properties of a new rare-earth-based equiatomic quaternary Heusler (EQH) compound, ScFeRhP. The results demonstrated that ScFeRhP is a HM at its equilibrium lattice constant, with a to

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14

Tokumitsu, Eisuke, and Makoto Konagai. "Development of Contact Materials for Semiconductor Devices. Heavy Doping in III-V Compound Semiconductors." Materia Japan 33, no. 6 (1994): 709–14. http://dx.doi.org/10.2320/materia.33.709.

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15

CHENG, L. J., D. T. H. LIU, and K. L. LUKE. "OPTICAL PROCESSING WITH PHOTOREFRACTIVE COMPOUND SEMICONDUCTORS." Journal of Nonlinear Optical Physics & Materials 01, no. 03 (1992): 609–38. http://dx.doi.org/10.1142/s0218199192000303.

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Photorefractive compound semiconductors are attractive for optical processing because of fast material response, compatibility with semiconductor lasers, and availability of cross polarization diffraction for enhancing signal-to-noise ratio. This paper presents a collection of recent experimental results on optical processing using photorefractive GaAs and InP. The results demonstrate the feasibility of using photorefractive compound semiconductors as dynamic holographic interaction media for optical processing applications.

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16

BOYD, JOSEPH T. "Integrated optics using lll-V compound semiconductor materials." Optics News 14, no. 2 (1988): 15. http://dx.doi.org/10.1364/on.14.2.000015.

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17

Droopad, R., K. Rajagopalan, J. Abrokwah, P. Zurcher, and M. Passlack. "Compound semiconductor MOSFETs." Microelectronic Engineering 84, no. 9-10 (2007): 2138–41. http://dx.doi.org/10.1016/j.mee.2007.04.018.

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18

Rakhymbekov, Aitbai, Aigul Idrisova, Rosa Saduakasova, Gulmira Nurbosynova, and Meruert Turlybekova. "Preparation of a Semiconductor Film with the Aid of a Superionic." Key Engineering Materials 771 (June 2018): 130–35. http://dx.doi.org/10.4028/www.scientific.net/kem.771.130.

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The actuality of the topic chosen by us lies in the fact that the effect of oxygen on the properties of semiconductors has not been studied sufficiently well, mainly because of the imperfections of methods for controlling the oxygen content in semiconductor materials. Almost in all such materials, oxygen is present either as an uncontrolled impurity or as a doping additive, or, in the case of oxide semiconductors, as in our case with a semiconductor film of vanadium dioxide, is part of the compound. The oxygen contained in the semiconductor film significantly affects the property of the materi

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19

HINDMARCH, AIDAN T. "INTERFACE MAGNETISM IN FERROMAGNETIC METAL–COMPOUND SEMICONDUCTOR HYBRID STRUCTURES." SPIN 01, no. 01 (2011): 45–69. http://dx.doi.org/10.1142/s2010324711000069.

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Interfaces between dissimilar materials present a wide range of fascinating physical phenomena. When a nanoscale thin-film of a ferromagnetic metal is deposited in intimate contact with a compound semiconductor, the properties of the interface exhibit a wealth of novel behavior, having immense potential for technological application, and being of great interest from the perspective of fundamental physics. This article presents a review of recent advances in the field of interface magnetism in (001)-oriented ferromagnetic metal/III–V compound semiconductor hybrid structures. Until relatively re

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20

Sánchez-Vergara, Guevara-Martínez, Arreola-Castillo, and Mendoza-Sevilla. "Fabrication of Hybrid Membranes Containing Nylon-11 and Organic Semiconductor Particles with Potential Applications in Molecular Electronics." Polymers 12, no. 1 (2019): 9. http://dx.doi.org/10.3390/polym12010009.

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Chemical degradation is a major disadvantage in the development of organic semiconductors. This work proposes the manufacture and characterization of organic semiconductor membranes in order to prevent semiconductor properties decreasing. Semiconductor membranes consisting of Nylon-11 and particles of π-conjugated molecular semiconductors were manufactured by high-vacuum evaporation followed by thermal relaxation. Initially, and with the aim of obtaining semiconductor particles, bulk heterojunction (BHJ) was carried out using green chemistry techniques between the zinc phthalocyanine (ZnPc) an

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21

Duan, X., and C. M. Lieber. "General Synthesis of Compound Semiconductor Nanowires." Advanced Materials 12, no. 4 (2000): 298–302. http://dx.doi.org/10.1002/(sici)1521-4095(200002)12:4<298::aid-adma298>3.0.co;2-y.

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22

Dubey, Swati, Ayushi Paliwal, and S. Ghosh. "Frohlich Interaction in Compound Semiconductors: A Comparative Study." Advanced Materials Research 1141 (August 2016): 44–50. http://dx.doi.org/10.4028/www.scientific.net/amr.1141.44.

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In polar semiconductor materials, LO phonons produce a macroscopic electric field, which interacts with the electrons. This coupling of long range is known as Frohlich interaction. Due to the interaction of an electron with LO phonons, a quasi-particle is formed known as polaron. The strength of this coupling is expressed by a dimensionless Frohlich coupling constant. Due to the polar coupling to LO phonons, the carriers lose their initial kinetic energy to the lattice by a very efficient relaxation mechanism in III-V bulk semiconductors. Therefore it would be interesting to examine the effect

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23

MEDVEDKIN, G. A., S. I. GOLOSHCHAPOV, V. G. VOEVODIN, et al. "NOVEL SPINTRONIC MATERIALS BASED ON FERROMAGNETIC SEMICONDUCTOR CHALCOPYRITES." International Journal of Nanoscience 03, no. 01n02 (2004): 39–50. http://dx.doi.org/10.1142/s0219581x04001791.

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Ternary diamond-like compounds in II–IV–V2 semiconductor system heavily-doped with transition d-element Mn have been recently prepared. The materials grown in both forms — single crystal layers and polycrystalline bulks — exhibit well defined ferromagnetic hysteresis with a saturation behavior in the magnetization curve up to above room temperature. Curie temperatures are of TC=310 K to 320 K for ( Cd 1-x Mn x) GeP 2 and ( Zn 1-x Mn x) GeP 2 compounds. The chemical states in the bulk of ZnGeP 2: Mn and interface of Mn -doped ferromagnetic layer on ZnGeP 2 (001) crystal, have been clarified by

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24

Schmidt, W. G. "III-V compound semiconductor (001) surfaces." Applied Physics A: Materials Science & Processing 75, no. 1 (2002): 89–99. http://dx.doi.org/10.1007/s003390101058.

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25

Sato, S., Takahiro Ishii, and Hiroshi Miura. "R&D of compound semiconductor materials in Japan energy." Microelectronics Journal 27, no. 4-5 (1996): xv—xx. http://dx.doi.org/10.1016/s0026-2692(96)90007-5.

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26

Ghandhi, Sorab K., and Ishwara B. Bhat. "Organometallic Vapor Phase Epitaxy: Features, Problems, New Approaches." MRS Bulletin 13, no. 11 (1988): 37–44. http://dx.doi.org/10.1557/s0883769400063909.

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Modern compound semiconductor devices are usually fabricated in one or more layers of single-crystal material, which are epitaxially grown on a crystalline substrate. Since most of these semiconductors decompose into their constituent components at high temperature, epitaxial growth in its simplest form can be accomplished by transporting individual components to a heated substrate, where they react to form the compound semiconductor. This is the basis of molecular beam epitaxy (MBE), where the process is carried out in an ultrahigh vacuum environment.Growth of these materials in an atmospheri

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27

Gagnon, Jarod C., Michael Presley, Nam Q. Le, Timothy J. Montalbano, and Steven Storck. "A pathway to compound semiconductor additive manufacturing." MRS Communications 9, no. 3 (2019): 1001–7. http://dx.doi.org/10.1557/mrc.2019.114.

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28

Thomas, Tsai C., and R. Stanley Williams. "Solid phase equilibria in the Au-Ga-As, Au-Ga-Sb, Au-In-As, and Au-In-Sb ternaries." Journal of Materials Research 1, no. 2 (1986): 352–60. http://dx.doi.org/10.1557/jmr.1986.0352.

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The Au-Ga-As, Au-Ga-Sb, Au-In-As, and Au-In-Sb ternaries were surveyed using x-ray powder diffraction to determine which metallic phases exist at equilibrium with the III-V compound semiconductors. In closed, small-volume systems (i.e., formation of gas-phase products was prevented), Au does not react with GaAs but does react with the other III-V's investigated to produce Au-group III intermetallic compounds and another solid phase containing the group V element. However, each semiconductor formed pseudobinary systems with at least two different intermetallic compounds. The bulk phase diagrams

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29

Nishio, Kenya, Suguru Saito, Yoshiya Hagimoto, and Hayato Iwamoto. "Effect of WET treatment on Group III-V Compound Semiconductor Surface." Solid State Phenomena 282 (August 2018): 43–47. http://dx.doi.org/10.4028/www.scientific.net/ssp.282.43.

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In this work, we investigated interfacial properties of InP, which is a typical group III-V compound used for semiconductors, by using a chemical-treated metal oxide semiconductor (MOS) capacitor. The interfacial properties of InP is more affected by interface state density than the surface roughness and is greatly affected by In2O3in particular. Additionally, we evaluated In2O3growth during 24-hour rinsing and air exposure and found that In2O3on an InP surface grows larger during rinsing than during air exposure. To reduce In2O3, the rinse needs to be optimized.

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30

IÑIGUEZ, BENJAMIN, TOR A. FJELDLY, MICHAEL S. SHUR, and TROND YTTERDAL. "SPICE MODELING OF COMPOUND SEMICONDUCTOR DEVICES." International Journal of High Speed Electronics and Systems 09, no. 03 (1998): 725–81. http://dx.doi.org/10.1142/s0129156498000312.

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We review recent advances in the modeling of novel and advanced semiconductor devices, including state-of-the-art MESFET and HFETs, heterodimensional FETs, resonant tunneling devices, and wide-bandgap semiconductor transistors. We emphasize analytical, physics-based modeling incorporating the important effects present in modern day devices, including deep sub-micrometer devices. Such an approach is needed in order to accurately describe and predict both stationary and dynamic device behavior and to make the models suitable for implementation in advanced computer aided design tool including cir

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31

Fantini, Fausto, and Fabrizio Magistrali. "Reliability of compound semiconductor devices." Microelectronics Reliability 32, no. 11 (1992): 1559–69. http://dx.doi.org/10.1016/0026-2714(92)90456-u.

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32

Parsey, John M. "Issues in high-volume compound semiconductor epitaxy." JOM 50, no. 8 (1998): 32–33. http://dx.doi.org/10.1007/s11837-998-0455-7.

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33

Lee, Seung Woo, and Hwa Ki Lee. "Data acquisition system of compound semiconductor fabrication." Journal of Mechanical Science and Technology 21, no. 12 (2007): 2149–58. http://dx.doi.org/10.1007/bf03177475.

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34

Sands, T., E. D. Marshall, and L. C. Wang. "Solid-phase regrowth of compound semiconductors by reaction-driven decomposition of intermediate phases." Journal of Materials Research 3, no. 5 (1988): 914–21. http://dx.doi.org/10.1557/jmr.1988.0914.

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The solid-phase epitaxial regrowth of a III–V compound semiconductor by a two-stage reaction between a two-layer metallization and a compound semiconductor substrate is described. The regrowth process begins with a low-temperature reaction between a metal M (e.g. Ni, Pd, or Pt) and a compound semiconductor substrate, AB, to produce an intermediate M, AB or MB, phase. A subsequent reaction at a higher temperature between an overlayer of Si, Ge, Al, or In and the intermediate phase results in the decomposition of the intermediate phase and the epitaxial regrowth of a layer of the compound semico

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35

McKernan, S. "Application of WACBED to superlattice structures in compound semiconductors." Proceedings, annual meeting, Electron Microscopy Society of America 45 (August 1987): 44–45. http://dx.doi.org/10.1017/s0424820100125257.

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Superlattice structures are now routinely grown in compound semiconductors, with superlattice periodicities ranging from a few angstroms to several hundred angstroms. The structures consist of alternating layers of compound semiconductor which have different chemical composition. The composition of the layers may be chosen to provide a relatively large lattice mismatch for a strained layer superlattice, or to provide lattice matching for good epitactic growth. The chemical difference may be large, as in AIAs/GaAs for example or may be represent only a change in concentration of substitutionall

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36

Katayama-Yoshida, H., K. Sato, T. Fukushima, et al. "Computational Nano-Materials Design for II-VI Compound Semiconductor-Based Spintronics." Journal of the Korean Physical Society 53, no. 1 (2008): 1–12. http://dx.doi.org/10.3938/jkps.53.1.

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37

Chu, S. N. G. "Transmission Electron Microscopy of InP-Based Compound Semiconductor Materials and Devices." Annual Review of Materials Science 20, no. 1 (1990): 339–63. http://dx.doi.org/10.1146/annurev.ms.20.080190.002011.

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38

Ursaki, V. V., I. M. Tiginyanu, L. Sirbu, and M. Enachi. "Luminescent materials based on semiconductor compound templates for random laser applications." physica status solidi (c) 6, no. 5 (2009): 1097–104. http://dx.doi.org/10.1002/pssc.200881146.

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39

Hussain, A., L. H. Yang, Y. B. Zou, et al. "Monte Carlo simulation study of electron yields from compound semiconductor materials." Journal of Applied Physics 128, no. 1 (2020): 015305. http://dx.doi.org/10.1063/5.0012154.

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40

Rachmady, Willy, James Blackwell, Gilbert Dewey, et al. "Surface Preparation and Passivation of III-V Substrates for Future Ultra-High Speed, Low Power Logic Applications." Solid State Phenomena 145-146 (January 2009): 165–67. http://dx.doi.org/10.4028/www.scientific.net/ssp.145-146.165.

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III-V compound semiconductors have been recognized among the potential options for continuing transistor power-performance scaling owing to their ultra high charge carrier mobility. In order to realize their potential in high performance and lower-power digital logic applications, there must be strong gate control and a high Ion-Ioff ratio, achieved by integrating a stable, ultra thin high-K dielectric between the semiconductor and the gate [1, 2]. Unlike Si, which has long benefited from its very stable native oxide, III-V materials suffer from their poor native oxides that cause charge traps

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41

Maeda, Akihiro, Aki Nakauchi, Yusuke Shimizu, et al. "A Windmill-Shaped Molecule with Anthryl Blades to Form Smooth Hole-Transport Layers via a Photoprecursor Approach." Materials 13, no. 10 (2020): 2316. http://dx.doi.org/10.3390/ma13102316.

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Preparation of high-performance organic semiconductor devices requires precise control over the active-layer structure. To this end, we are working on the controlled deposition of small-molecule semiconductors through a photoprecursor approach wherein a soluble precursor compound is processed into a thin-film form and then converted to a target semiconductor by light irradiation. This approach can be applied to layer-by-layer solution deposition, enabling the preparation of p–i–n-type photovoltaic active layers by wet processing. However, molecular design principles are yet to be established t

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42

Fraas, Lewis M. "III-V Materials for Photovoltaic Applications." MRS Bulletin 18, no. 10 (1993): 48–50. http://dx.doi.org/10.1557/s0883769400038306.

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While there are only two group IV semiconductors, Si and Ge, the III-V material system offers a nearly infinite number of single-crystal semiconducting compounds to choose from. For example, there are nine binary compounds resulting from combining the group III elements Al, Ga, or In with the group V elements P, As, or Sb. From this group, high-performance photovoltaic cells have been made from GaAs, GaSb, and InP. Using ternary III-V compounds, high-performance photovoltaic devices have been made with AlGaAs, GalnAs, GaAsP, and InGaP2. All of the above-cited photovoltaic cells have respectabl

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43

Gao, Junning, Yeonbae Lee, Kin Man Yu, Samuel S. Mao, and Wladek Walukiewicz. "Electronically Controlled Chemical Stability of Compound Semiconductor Surfaces." ACS Applied Materials & Interfaces 11, no. 35 (2019): 32543–51. http://dx.doi.org/10.1021/acsami.9b10739.

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44

Dzhagan, V. M., Yu M. Azhniuk, A. G. Milekhin, and D. R. T. Zahn. "Vibrational spectroscopy of compound semiconductor nanocrystals." Journal of Physics D: Applied Physics 51, no. 50 (2018): 503001. http://dx.doi.org/10.1088/1361-6463/aada5c.

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45

Bennett, Brian R., Mario G. Ancona, and J. Brad Boos. "Compound Semiconductors for Low-Power p-Channel Field-Effect Transistors." MRS Bulletin 34, no. 7 (2009): 530–36. http://dx.doi.org/10.1557/mrs2009.141.

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AbstractResearch in n-channel field-effect transistors based upon III–V compound semiconductors has been very productive over the last 30 years, with successful applications in a variety of high-speed analog circuits. For digital applications, complementary circuits are desirable to minimize static power consumption. Hence, p-channel transistors are also needed. Unfortunately, hole mobilities are generally much lower than electron mobilities for III–V compounds. This article reviews the recent work to enhance hole mobilities in antimonide-based quantum wells. Epitaxial heterostructures have be

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46

McGilp, John F. "Alloying and entropy effects in predicting metal/compound–semiconductor interface reactivity." Journal of Materials Research 2, no. 4 (1987): 516–23. http://dx.doi.org/10.1557/jmr.1987.0516.

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A previous bulk thermodynamic model, which used enthalpies of compound and alloy formation to predict metal/compound–semiconductor interface reactivity, is extended to include entropy. It is shown that, for most metals on CdTe, GaAs, GaSe, InP, and MoS2, solid-state reactions are energetically favored up to semiconductor dissociation temperatures and, consequently, entropy effects are minimal. Gold and silver, with their small enthalpies of metal–semiconductor anion compound formation, can be exceptions. Even here, the results for gold/III–V systems favor solid-state reaction at room temperatu

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47

Pugh, John H., and R. Stanley Williams. "Entropy-driven loss of gas phase group V species from gold/III-V compound semiconductor systems." Journal of Materials Research 1, no. 2 (1986): 343–51. http://dx.doi.org/10.1557/jmr.1986.0343.

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Temperature-dependent chemical interactions between Au and nine III-V compound semiconductors (III = Al,Ga,In and V = P,As,Sb) have been calculated using bulk thermodynamic properties. Enthalpic considerations alone are insufficient to predict metal/ compound semiconductor reactivities. The entropy of vaporization of the group V elements is shown to be an extremely important driving force for chemical reactions involving the III-V's, since it enables several endothermic reactions to occur spontaneously under certain temperature and pressure conditions. Plots of either Gibbs' free energies of r

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48

Eom, S. H., D. J. Kim, Y. M. Yu, and Y. D. Choi. "Temperature-dependent absorption edge in AgGaS2 compound semiconductor." Journal of Alloys and Compounds 388, no. 2 (2005): 190–94. http://dx.doi.org/10.1016/j.jallcom.2004.07.031.

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Venkatasubramanian, R. "MBE growth of compound semiconductors: Part I. Stochastic modeling." Journal of Materials Research 7, no. 5 (1992): 1221–34. http://dx.doi.org/10.1557/jmr.1992.1221.

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Abstract:

A stochastic model for the MBE growth kinetic study of compound semiconductors is developed based on the master equation approach, the solid-on-solid restriction, and the quasi-chemical approximation. The developed model is suitable for the zinc blende crystals with 001 as the growth direction. In the modeling, the diamond cubic structure and the two sublattice nature of the zinc blende crystal are taken into account. The stochastic model is extended to compound semiconductor alloys such as GaAlAsSb to make it suitable for the MBE kinetic studies of alloys. Up to four elements with two in each

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Yfanti-Katti, M., F. Prokopos-Chouliaras, K. Milonakou-Koufoudaki, et al. "Production and identification of highly photoconductive CdSe-based hybrid organic-inorganic multi-layer materials." Физика и техника полупроводников 51, no. 12 (2017): 1651. http://dx.doi.org/10.21883/ftp.2017.12.45180.8236.

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Abstract:

Highly photoconductive thin multi-layers of new hybrid organic-inorganic semiconductors have been developed. They result by the combination of an inorganic semiconductor with ferrocene, a commercially available compound, applying the electrodeposition and spin coating techniques, introducing sodium oxalate as an additive in the electrolytic bath. The organic layer of the hybrid system is enveloped between two inorganic layers in a sandwich-like structure. The full characterization of the final products by XRD, SEM-EDAX, band gap and photoelectrochemical cell (PEC) measurements confirmed the de

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