Relevant bibliographies by topics / Concentration impurete

Contents

  1. Journal articles
  2. Dissertations / Theses
  3. Books
  4. Book chapters
  5. Conference papers
  6. Reports

Academic literature on the topic 'Concentration impurete'

Author: Grafiati
Published: 4 June 2021
Last updated: 9 February 2022

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Journal articles on the topic "Concentration impurete"

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Inoue, Kaihei, Yuki Tokumoto, Kentaro Kutsukake, Yutaka Ohno, and Ichiro Yonenaga. "Growth of Heavily Indium Doped Si Crystals by Co-Doping of Neutral Impurity Carbon or Germanium." Key Engineering Materials 508 (March 2012): 220–23. http://dx.doi.org/10.4028/www.scientific.net/kem.508.220.

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Czochralski Growth of Si Crystals Heavily Doped with in Impurity and Co-Doped with Electrically Neutral Impurity C or Ge Was Conducted in Order to Investigate the Solubility and Ionization Ratio of in in Si for Utilizing in Advanced ULSI and PV Devices. The Carrier Concentrations in the Grown in-Doped and (In+C) and (In+Ge) Co-Doped Crystals Were in a Range of 3.5~6.5 × 1016 Cm-3, much Lower than the Total Concentration of in Impurity due to the Low Ionization Ratio. Sufficient Increase of Carrier Concentrations by Co-Doping of C or Ge Impurity Was Not Detected for their Low Concentrations in the Grown Crystals Investigated.
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Chen, Shih-Jui, Yi-Li Chen, Yu-Jui Chang, Dong-Lin Chuang, Yi-Chun Chen, Hai-Ping Tsui, and Yean-Ren Hwang. "Measurement of Electrical Discharge Machining Oil Quality by Analyzing Variations in the Equivalent Relative Permittivity of the Capacitive Sensor." Sensors 20, no. 21 (November 2, 2020): 6248. http://dx.doi.org/10.3390/s20216248.

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In this study, a concentration monitoring system was successfully developed. A sensor was immersed in electrical discharge machining oil, and the capacitance of the sensor changed as a function of the impurity concentration. Thus, DC voltage variations were produced via a conversion circuit. Carbon black and iron particles with different concentrations were successfully characterized. The capacitance increments were positively correlated with the particle concentration. The linear fitting results based on the impurity concentration were used to express the degree of influence of particles with different weight percentage concentrations on the increase in the overall capacitance value. An equivalent medium theory model was then developed according to the electrical characteristics of the impurities to predict different particle volume percentages.
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Al, E. B., F. Ungan, U. Yesilgul, E. Kasapoglu, H. Sari, and I. Sökmen. "Infrared transitions between hydrogenic states in GaInNAs/GaAs quantum wells." International Journal of Modern Physics B 30, no. 22 (September 6, 2016): 1650139. http://dx.doi.org/10.1142/s0217979216501393.

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The effects of nitrogen and indium concentrations on the [Formula: see text], [Formula: see text], [Formula: see text] and [Formula: see text]-like donor impurity energy states in a single [Formula: see text] quantum well (QW) are investigated by variational approach within the effective mass approximation. The results are presented as a function of the well width and the donor impurity position. It is found that the impurity binding and transition energies depend strongly on the indium concentration while depends weakly on the nitrogen concentration.
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Zhang, Sui-Shuan, Zong-Yan Zhao, and Pei-Zhi Yang. "Analysis of electronic structure and optical properties of N-doped SiO2 based on DFT calculations." Modern Physics Letters B 29, no. 19 (July 20, 2015): 1550100. http://dx.doi.org/10.1142/s0217984915501006.

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The crystal structure, electronic structure and optical properties of N-doped [Formula: see text] with different N impurity concentrations were calculated by density function theory within GGA[Formula: see text]+[Formula: see text]U method. The crystal distortion, impurity formation energy, band gap, band width and optical parameter of N-doped [Formula: see text] are closely related with N impurity concentration. Based on the calculated results, there are three new impurity energy levels emerging in the band gap of N-doped [Formula: see text], which determine the electronic structure and optical properties. The variations of optical properties induced by N doping are predominately determined by the unsaturated impurity states, which are more obvious at higher N impurity concentration. In addition, all the doping effects of N in both [Formula: see text]-quartz [Formula: see text] and [Formula: see text]-quartz [Formula: see text] are very similar. According to these findings, one could understand the relationship between nitrogen concentration and optical parameter of [Formula: see text] materials, and design new optoelectrionic Si–O–N compounds.
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Velichko, O. I. "On concentration dependence of arsenic diffusivity in silicon." International Journal of Computational Materials Science and Engineering 05, no. 01 (March 2016): 1650005. http://dx.doi.org/10.1142/s2047684116500056.

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An analysis of the equations used for modeling thermal arsenic diffusion in silicon has been carried out. It was shown that for arsenic diffusion governed by the vacancy-impurity pairs and the pairs formed due to interaction of impurity atoms with silicon self-interstitials in a neutral charge state, the doping process can be described by the Fick’s second law equation with a single effective diffusion coefficient which takes into account two impurity flows arising due to interaction of arsenic atoms with vacancies and silicon self-interstitials, respectively. Arsenic concentration profiles calculated with the use of the effective diffusivity agree well with experimental data if the maximal impurity concentration is near the intrinsic carrier concentration. On the other hand, for higher impurity concentrations a certain deviation in the local regions of arsenic distribution is observed. The difference from the experiment can occur due to the incorrect use of effective diffusivity for the description of two different impurity flows or due to the formation of nonuniform distributions of neutral vacancies and neutral self-interstitials in heavily doped silicon layers. We also suppose that the migration of nonequilibrium arsenic interstitial atoms makes a significant contribution to the formation of a low concentration region on thermal arsenic diffusion.
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Tanaka, Daiki, Wei Fang Lu, Satoshi Kamiyama, Motoaki Iwaya, Tetsuya Takeuchi, and Isamu Akasaki. "Photoluminescence Characterization of Fluorescent Sic with High Boron and Nitrogen Concentrations." Materials Science Forum 1004 (July 2020): 265–71. http://dx.doi.org/10.4028/www.scientific.net/msf.1004.265.

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The dependence of optical properties on impurity concentrations and excitation power was explored. In particular, it was found that the peak shift of photoluminescence (PL) is proportional to the boron concentration. This might be due to donor–acceptor pair (DAP) recombination via double deep acceptor levels (D-centers), where the occupancy of the D*-center increased with the B concentration, and the recombination via the D*-center for longer wavelengths became dominant. Moreover, the relative constants B and C were calculated by BC model fitting from the internal quantum efficiency (IQE) curve as a function of excitation power. The theoretical extrapolation based on BC model predicted that high impurity concentrations are sufficient to suppress the droop phenomenon of efficiency induced by the increased excitation power.
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Franc, J., H. Elhadidy, V. Babentsov, A. Fauler, and M. Fiederle. "Comparative study of vertical gradient freeze grown CdTe with variable Sn concentration." Journal of Materials Research 21, no. 4 (April 1, 2006): 1025–32. http://dx.doi.org/10.1557/jmr.2006.0117.

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Four CdTe ingots with gradually increased concentration of the Sn impurity have been grown by the vertical gradient freeze method and were characterized with glow discharge mass spectroscopy, photoinduced current transient spectroscopy, resistivity, photoconductivity, and photoluminescence techniques. It was shown that the Sn impurity strongly influences resistivity and photoconductivity of the material. Concentration of Sn must be higher than the total concentration of residual acceptors to reach strong compensation. The middle-gap donor level pins the Fermi-level. Photoconductive high resistivity material can be prepared with Sn concentrations in the melt in the range 1018–1019 cm−3. In total, 6 electron traps and 3 hole traps were identified in the band gap by several complementary techniques.
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Benzaquen, M., D. Walsh, and J. Auclair. "Auto-épitaxie et propriétés d'As–Ga obtenu par épitaxie en phase vapeur à partir de composés organo-métalliques." Canadian Journal of Physics 63, no. 6 (June 1, 1985): 732–35. http://dx.doi.org/10.1139/p85-116.

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Lightly compensated epitactic n-type GaAs is obtained by metal-organic vapour-phase epitaxy (MOVPE) with free-carrier concentration in the low 1015 cm−3 range and with good uniformity of both thickness and impurity concentrations over a 2-in.-diameter area (1 in. = 2.54 cm). Detailed Hall-effect and photoluminescence measurements are reported. At temperatures below 8 K, the conductivity is governed by variable-range hopping, clearly indicating a band of localized donor states. At higher impurity concentrations, a metallic contribution to the conductivity suggests a buildup of extended states near the middle of this band. These results are consistent with the observed photoluminescence.
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Girrens, S. P., and F. W. Smith. "Constituent Diffusion in a Deformable Thermoelastic Solid." Journal of Applied Mechanics 54, no. 2 (June 1, 1987): 441–46. http://dx.doi.org/10.1115/1.3173034.

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Solid mixtures containing initially uniform dilute concentrations of impurity elements may, upon the application of mechanical and thermal loading, develop regions of high impurity concentration that could result in local degradation of material properties. To address these degradation processes, a fully coupled thermomechanical-diffusion theory has been developed to describe the mass transport of mobile constituents driven by gradients in concentration, strain dilatation and temperature in a solid deformable parent material. A finite element code has been assembled to solve plane transient thermomechanical-diffusion problems. The theory presented and the resulting code have been successfully used to model internal hydrogen redistribution in β-phase Ti alloys induced by elastic strain gradients during bending.
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Plukienė, Rita, Elena Lagzdina, Laurynas Juodis, Artūras Plukis, Andrius Puzas, Rasa Gvozdaitė, Vidmantas Remeikis, et al. "Investigation of Impurities of RBMK Graphite by Different Methods." Radiocarbon 60, no. 6 (November 19, 2018): 1861–70. http://dx.doi.org/10.1017/rdc.2018.93.

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ABSTRACTSamples of graphite from a RBMK-1500 reactor at the Ignalina Nuclear Power Plant from different construction elements (stack, sleeve, and bushing) were analyzed by the instrumental neutron activation analysis (INAA) method (LVR-15 experimental reactor of the Research Centre Řež, Ltd.) using the prompt gamma activation analysis (PGAA) method (Heinz Maier-Leibnitz Zentrum) and with an inductively coupled plasma mass spectrometer (ICP-MS) (CPST, Lithuania). These measurements were performed with the aim of obtaining the missing information on the impurity distribution in the RBMK-type nuclear graphite constructions as well as for intercomparison purposes, with the results measured in the graphite sleeve samples previously obtained by INAA & GDMS (Glow Discharge Mass Spectrometry) at CEA Saclay, France, and ICP-MS (CPST, Lithuania) methods. Validation of the ICP-MS method for the nuclear graphite impurity concentration determination was proven. The experimentally obtained RBMK-1500 graphite impurity values in different graphite constructions were compared with other measurements and new limits of the possible maximal concentrations of nuclear RBMK graphite impurity concentrations were obtained.
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Dissertations / Theses on the topic "Concentration impurete"

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Selmani, Larbi. "Etude des défauts électriques associes à l'or et au fer dans le silicium." Lyon 1, 1985. http://www.theses.fr/1985LYO19018.

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Nous avons utilisé la diffusion thermique pour introduire des impuretés métalliques dans le silicium afin d'étudier les défauts électriquement actifs associés à celles-ci. Nous nous sommes particulièrement intéressés à l'or et au fer. La technique de spectroscopie transitoire a été employée comme outil de caractérisation. Nous avons analysé l'influence de la concentration d'or introduite sur les propriétés du centre accepteur (Ec - 0,55 eV) qui lui est associé (énergie d'activation et section efficace de capture). Il en ressort que celui-ci est probablement dû à différents états complexes. Dans le silicium dopé bore ayant subi une diffusion de fer, nous avons identifié trois centres profonds en étroite corrélation avec la vitesse de refroidissement. Le premier H(0,43) n'apparaît que lorsque la trempe est efficace et se transmute au cours du temps. Il est dû au fer en site interstitiel. Les deux autres niveaux H(0,4) et H(0,33) sont présents lorsque l'échantillon subit un refroidissement. Assez lent. Nous démontrons ainsi que les deux niveaux associés au fer dont l'énergie d'activation est située autour de 0,4 eV sont de nature différente.
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Casse, Gianluigi. "The effect of hadron irradiation on the electrical properties of particle detectors made from various silicon materials." Université Joseph Fourier (Grenoble), 1998. http://www.theses.fr/1998GRE10112.

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Les detecteurs au silicium, dont l'utilisation est prevue dans les futures experiences de physique des hautes energies (lhc au cern) devront soutenir un tres haut niveau de radiation. La defaillance des detecteurs plus exposes est attendue apres quelques annees d'operations. Un grand interet est pourtant devolue a l'etude des changements provoques par les radiations dans les detecteurs et a l'amelioration de la resistance aux radiations de ceux-ci. L'introduction d'impuretes dans le cristal de silicium peut influencer la tenue aux radiations. Les impuretes forment des complexes avec les defauts primaires induits par les radiations. Ces complexes peuvent etre electriquement actifs ou inactifs. Dans ce dernier cas, les defauts n'affectent pas les proprietes electriques du detecteur. Une grande concentration d'impuretes qui forment des complexes inactifs peut reduire la vitesse de degradation des detecteurs. Les plus importants parametres electriques qui changent en fonction de la fluence sont la densite effective de dopage, le courant inverse et l'efficacite de collection de charge. Cette these presente une etude detaillee des changements de ces parametres en fonction de la fluence hadronique et du temps apres les irradiations, pour des cristaux de silicium contenant differentes teneurs en impuretes. Le role de l'o, c et sn sur la tenue aux radiations est evalue. L'etude a ete faite en utilisant comme detecteur de simples diodes (p#+-n-n#+). Certains changements des caracteristiques electriques de ces diodes apres des forts niveaux d'irradiation ne peuvent pas etre expliques par la theorie de la jonction p-n d'un semi-conducteur. Un modele de distribution du champ electrique est propose pour expliquer les proprietes de collection de charge des detecteurs irradies.
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Benkherourou, Ouahab. "Conception et mise au point d'un analyseur hemispherique en vue de spectroscopies d'electrons resolues angulairement : caracterisation d'interfaces si/sio::(2) et si/sio::(x)n::(y) obtenues par implantation ionique a faible energie." Université Louis Pasteur (Strasbourg) (1971-2008), 1987. http://www.theses.fr/1987STR13014.

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Dans la region interfaciale, on retrouve toutes les configurations possibles de liaisons autour du tetraedre de si. Les profils de concentration de ces especes different selon que l'on fait l'oxydation ou l'oxynitruration. La distribution de ces especes a l'interface suit le modele theorique r. B. M. (random bonding model). Ce modele permet de comprendre la morphologie de l'interface et donc d'etablir la nature des liaisons chimiques entre les differents atomes (si-o-si et si-n-si)
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Dal'Bo, Frédéric. "Spectroscopie optique d'heterostructures a base de tellurure de cadmium epitaxiees par jets moleculaires." Grenoble 1, 1988. http://www.theses.fr/1988GRE10123.

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La relaxation des contraintes est mise en evidence par une etude spectroscopique des transitions des excitons libres et varie en fonction de l'epaisseur de la couche et de l'orientation du support. Les differences entre les spectres de photoluminescence des materiaux massifs et ceux des couches epitaxiees sont dues aux effets des contraintes, aux defauts cristallins et aux impuretes introduites pendant la croissance. La structure de bande du puits quantique contraint est etudiee par spectroscopie optique. Elle est etudiee en fonction de l'epaisseur du puits
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Fiebig, Anke. "Prediction of crystal morphology for a limited range of impurity concentrations." Aachen Shaker, 2007. http://d-nb.info/988385546/04.

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GERARD, BRUNO. "Luminescence retardee stimulee electriquement dans les sulfures de zinc et de cadmium actives au cuivre, a l'or ou a l'argent et coactives a l'aluminium : application a un imageur mammographique numerique a memoire." Paris 6, 1988. http://www.theses.fr/1988PA066252.

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Etude de la faisabilite de cet imageur utilisant, comme principe d'acquisition de l'image x, l'effet gudden-pohl, phenomene de luminescence retarde stimulee electriquement (lse). Seuls zns et cds dopes par cu, au ou ag donne l'effet lse adequat apres une phase de sensibilisation. Variation de la luminescence en fonction de la dose de rayons x, du champ electrique, de la temperature, du dopage, etc. Modelisation de l'effet lse: l'enregistrement de l'image se fait par piegeage de trous sur des accepteurs dans la couche d'appauvrissement superficielle, la recombinaison radiative se produisant avec ces trous lorsque le champ electrique applique abaisse la barriere de potentiel superficielle. Elaboration d'une maquette en vue du developpement d'un imageur mammographique numerique
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Wang, Tianbo. "Reconstruction of soft X-ray and tungsten concentration profiles in tokamaks using gaussian process tomography." Thesis, Aix-Marseille, 2019. http://www.theses.fr/2019AIXM0182.

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En visant le développement d’une source d’énergie sécurisée et durable, la recherche sur la fusion nucléaire est actuellement concentrée autour de la construction et le fonctionnement du projet international d’ITER. Un des problèmes principaux qui menacent la sécurité et efficacité de fonctionnement de tokamaks, est l’accumulation d’impuretés dans le cœur de plasma, entraînant la dilution de carburant et la perte de puissance. Dans cette thèse, une nouvelle méthode est développée et appliquée pour la reconstruction de la distribution de rayonnement X-mou poloïdal au moyen de Processus Gaussien (GPs), qui fournit d’information d’impureté dans le plasma de tokamak. La méthode est testée sur des données synthétiques et expérimentaux avec comparaison avec succès aux techniques habituelles, au coût de calcul très réduit. La concentration de tungstène est déduits ,et l’approximation de réseau de neurones est étudiées, ouvrant des perspectives pour le contrôle d’impureté dans les tokamaks en temps réel
Aiming at the development of a sustainable and safe energy source, nuclear fusion research is presently largely concentrated around the construction and operation of the international ITER project. One of the primary issues threatening safe and efficient operation of tokamaks, is the accumulation of so-called impurities in the plasma core, causing fuel dilution and radiative power loss. In this doctoral work, a new method has been developed and applied for reconstruction of soft X-ray radiation distribution in poloidal cross-section by means of Gaussian processes (GPs), which can deliver the information about impurity concentrations in tokamak plasmas. The method was tested on synthetic and real data and was found to compare favorably with standard techniques, at greatly reduced computational cost. Concentration of tungsten was also inferred and neural network approximations were investigated, opening perspectives for real-time impurity control in tokamaks
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Fiebig, Anke [Verfasser]. "Prediction of Crystal Morphology for a Limited Range of Impurity Concentrations / Anke Fiebig." Aachen : Shaker, 2008. http://d-nb.info/1162790733/34.

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Dürr, Jérôme. "Contribution à l'étude structurale du système BaBiO3 dopé par du plomb ou par du potassium." Grenoble 1, 1993. http://www.theses.fr/1993GRE10008.

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Le compose babio#3, connu pour ses proprietes supraconductrices lorsqu'on substitue le bismuth par le plomb, a suscite un regain d'interet lorsqu'une temperature supraconductrice de 30 k environ a ete obtenue en le dopant avec du potassium. Nous avons caracterise finement par analyse e. D. X. Des monocristaux prepares soit par flux soit par electrocristallisation. Nous avons montre que dans les deux cas seuls les cristaux faiblement dopes (moins de 10% de potassium) etaient homogenes. Au-dela de ce taux de substitution, ils presentent soit un gradient de composition, soit plusieurs compositions distinctes. Ceci se traduit en general par un elargissement de la transition supraconductrice mesuree en susceptibilite alternative. Nous avons aussi mis en evidence deux nouvelles phases, l'une contenant du sodium, l'autre presentant un rapport (ba+k)/bi different de celui relatif a une phase perovskite. Par ailleurs, nous avons determine par diffraction des rayons x la structure d'un monocristal macle de composition k#0#. #0#2#3ba#0#. #9#9#4bi#0#. #9#7#4o#2#. #9#5. Les meilleurs affinements ont ete obtenus en decrivant la structure dans le groupe d'espace i2/m, comme pour le compose non dope. Nous avons trouve que pour cette faible concentration en potassium les atomes de potassium ne substituaient pas le baryum mais etaient situes sur l'un des deux sites de bismuth. Le meme type d'etude faite sur un monocristal de babio#3 dope au plomb (13%) a montre que la encore c'etait le groupe d'espace i2/m qui permettait la meilleure description de la structure. Enfin, nous avons determine la structure d'une nouvelle phase de type perovskite double, de formule ba#3#. #1#2k#0#. #6#8bi#3#. #4#4na#0#. #7#0o#1#2. La repartition des charges laisse peu d'espoir de rendre ce compose supraconducteur
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Ben, Amor Sami. "MAGNETOTRANSPORT SOUS PRESSION HYDROSTATIQUE DANS LES HETEROSTRUCTURES (A1xGa1-x)0. 48In0. 52As/Ga0. 47In0. 53As et Ga0. 50In0. 50P/GaAs." Toulouse, INSA, 1987. http://www.theses.fr/1987ISAT0013.

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Etude du magnetotransport sous champ intense dans les heterostructures gainas/alinas, gainp/gaas et gainas/algainas, l'application de la pression hydrostatique permettant de varier la structure de bande et la concentration electronique. Description coherente du systeme et de la contribution des differentes couches a la conduction totale dans les systemes a barriere alinas et algainas, basee sur une etude correlee des materiaux massifs et des heterojonctions. Mise en evidence d'un effet de photoconductivite persistante, associe a des defauts d'interface, dans le systeme gainp/gaas; etude de l'interaction electron-phonon comme fonction de la concentration des porteurs
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Books on the topic "Concentration impurete"

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Solymar, L., D. Walsh, and R. R. A. Syms. Semiconductors. Oxford University Press, 2018. http://dx.doi.org/10.1093/oso/9780198829942.003.0008.

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Both intrinsic and extrinsic semiconductors are discussed in terms of their band structure. The acceptor and donor energy levels are introduced. Scattering is discussed, from which the conductivity of semiconductors is derived. Some mathematical relations between electron and hole densities are derived. The mobilities of III–V and II–VI compounds and their dependence on impurity concentrations are discussed. Band structures of real and idealized semiconductors are contrasted. Measurements of semiconductor properties are reviewed. Various possibilities for optical excitation of electrons are discussed. The technology of crystal growth and purification are reviewed, in particular, molecular beam epitaxy and metal-organic chemical vapour deposition.
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Book chapters on the topic "Concentration impurete"

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Morkoç, Hadis. "Determination of Impurity and Carrier Concentrations." In Nitride Semiconductors and Devices, 216–32. Berlin, Heidelberg: Springer Berlin Heidelberg, 1999. http://dx.doi.org/10.1007/978-3-642-58562-3_7.

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Ark, W. F., and T. H. Chen. "Determination of the Impurity Concentration Profile in TNT." In Advances in Analysis and Detection of Explosives, 165–72. Dordrecht: Springer Netherlands, 1993. http://dx.doi.org/10.1007/978-94-017-0639-1_17.

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Meynadier, M. H. "Optical Measurements of Acceptor Concentration Profiles at GaAs/GaAlAs Quantum Well Interfaces." In Properties of Impurity States in Superlattice Semiconductors, 11–18. Boston, MA: Springer US, 1988. http://dx.doi.org/10.1007/978-1-4684-5553-3_2.

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Voronkov, V. V. "Effect of an Impurity on the Nonequilibrium Vacancy Concentration in a Growing Crystal." In Growth of Crystals, 19–29. Boston, MA: Springer US, 1991. http://dx.doi.org/10.1007/978-1-4615-3662-8_2.

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Satoh, Masataka, and Tomoyuki Suzuki. "Impurity Concentration Dependence of Recrystallization Process of Phosphorus Implanted 4H-SiC(11-20)." In Silicon Carbide and Related Materials 2005, 799–802. Stafa: Trans Tech Publications Ltd., 2006. http://dx.doi.org/10.4028/0-87849-425-1.799.

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Toriyama, Toshiyuki, and Susumu Sugiyama. "n-Type β-SiC Piezoresistance Analysis Under High Temperature and High Impurity Concentration." In Transducers ’01 Eurosensors XV, 1386–89. Berlin, Heidelberg: Springer Berlin Heidelberg, 2001. http://dx.doi.org/10.1007/978-3-642-59497-7_327.

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Yoshida, M., S. Tajima, T. Wada, Y. Mizuo, T. Takata, Y. Yaegashi, A. Ichinose, H. Yamauchi, N. Koshizuka, and S. Tanaka. "Possibility of Superconductivity Destruction Caused by Neither the Reduction of Hole Concentration nor Impurity Doping." In Springer Proceedings in Physics, 421–23. Berlin, Heidelberg: Springer Berlin Heidelberg, 1992. http://dx.doi.org/10.1007/978-3-642-77154-5_84.

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Murata, Satoshi, Yoshihiro Nakamura, Tomohiko Maeda, Yoko Shibata, Mina Ikuta, Masaaki Sugiura, Shugo Nitta, et al. "Dependence of DAP Emission Properties on Impurity Concentrations in N-/B-co-doped 6H-SiC." In Materials Science Forum, 335–38. Stafa: Trans Tech Publications Ltd., 2007. http://dx.doi.org/10.4028/0-87849-442-1.335.

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Sigg, H., J. Richter, K. v. Klitzing, and K. Ploog. "Influence of Repulsive Scatterers on the Cyclotron Resonance in Two-Dimensional Electron Systems with Controlled Acceptor Impurity Concentration." In High Magnetic Fields in Semiconductor Physics II, 419–27. Berlin, Heidelberg: Springer Berlin Heidelberg, 1989. http://dx.doi.org/10.1007/978-3-642-83810-1_63.

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Gharzouni, Ameni, Clément Alizé, and Sylvie Rossignol. "Fire Resistant Geopolymers Based on Several Clays Mixtures." In Clay and Clay Minerals [Working Title]. IntechOpen, 2021. http://dx.doi.org/10.5772/intechopen.98566.

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This chapter aims to highlight the effect of clay mixture mineral composition and alkali concentration of potassium alkaline solutions on the thermal behavior of geopolymer materials. For this, three mixtures composed of kaolin (pure, impure kaolin or mixture of both), calcium carbonate, sand and potassium feldspar and three potassium alkaline silicate solutions with different concentrations were used (5, 6 and 7 mol.L−1). At first, the effect of rotary calcination parameters at 750°C such as the dwell time (30, 60, 120 and 180 min) and weight powder (100, 400 and 500 g) was investigated. It was demonstrated that the kaolin dehydroxylation is quasi complete (> 90%) and do not significantly depend on the dwell time and powder weight. Whereas the carbonate decomposition degree increases with the increase of dwell time and the decrease of powder weight but still not complete (<80%). These differences influence the feasibility of consolidated materials. Indeed, a flash setting occurs for samples based mixtures with high calcium carbonate decomposition degree (> 50%) and low wettability values (500 μL/g) for the three used alkaline solutions. The thermal behavior at 1000°C depends on the chemical composition of the aluminosilicate source and the concentration of alkaline solution. A conservation of the compressive strength at 43 MPa after thermal treatment at 1000°C of geopolymers based on mixture of pure and impure kaolin and a low potassium concentration solution (5 mol.L−1) was evidenced.
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Conference papers on the topic "Concentration impurete"

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Cayan, Fatma N., Suryanarayana R. Pakalapati, and Ismail Celik. "A Degradation Model for Degradation of Solid Oxide Fuel Cell Anodes due to Impurities in Coal Syngas." In ASME 2011 9th International Conference on Fuel Cell Science, Engineering and Technology collocated with ASME 2011 5th International Conference on Energy Sustainability. ASMEDC, 2011. http://dx.doi.org/10.1115/fuelcell2011-54613.

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A new phenomenological one-dimensional model is formulated to simulate the typical degradation patterns observed in Solid Oxide Fuel Cell (SOFC) anodes due to coal syngas contaminants such as arsenic (As) and phosphorous (P). The model includes gas phase diffusion and surface diffusion within the anode and the adsorption reactions on the surface of the Ni-YSZ-based anode. Model parameters such as reaction rate constants for the adsorption reactions are obtained through indirect calibration to match the degradation rates reported in the literature for arsine (AsH3), phosphine (PH3) and hydrogen sulfide (H2S) under accelerated testing conditions. Results from the model demonstrate that the deposition of the impurity on the Ni catalyst starts near the fuel channel/anode interface and slowly moves toward the active anode/electrolyte interface as observed in the experiments. Parametric studies performed at different impurity concentrations and operating temperatures show that the coverage rate increases with increasing temperature and impurity concentration, as expected. The calibrated model was then used for prediction of the performance curves at different impurity concentrations and operating temperatures. Good agreement is obtained between the predicted results and the experimental data reported in the literature.
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Cayan, Fatma N., Suryanarayana R. Pakalapati, Francisco Elizalde-Blancas, and Ismail Celik. "A Phenomenological Model for Degradation of Solid Oxide Fuel Cell Anodes Due to Impurities in Coal Syngas." In ASME 2009 7th International Conference on Fuel Cell Science, Engineering and Technology. ASMEDC, 2009. http://dx.doi.org/10.1115/fuelcell2009-85177.

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A new phenomenological one-dimensional model is formulated to simulate the typical degradation patterns observed in Solid Oxide Fuel Cell (SOFC) anodes due to coal syngas contaminants such as arsenic (As) and phosphorous (P). The model includes ordinary gas phase diffusion including Knudsen diffusion and surface diffusion within the anode and the adsorption reactions on the surface of the Ni-YSZ based anode. Model parameters such as reaction rate constants for the adsorption reactions are calibrated to match the degradation rates reported in the literature. Preliminary results from implementation of the model demonstrated that the deposition of the impurity on the Ni catalyst starts near the fuel channel/anode interface and slowly moves toward the active anode/electrolyte interface which is in good agreement with the experimental data. Parametric studies performed at different impurity concentrations, operating temperatures and current densities showed that the coverage rate increases with increasing temperature, impurity concentration and current density, as expected.
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Li, Y., C. Thorn, X. Qian, W. Tang, J. Joshi, J. Stewart, M. Diwan, et al. "Modeling electronegative impurity concentrations in liquid argon detectors." In 2016 IEEE Nuclear Science Symposium, Medical Imaging Conference and Room-Temperature Semiconductor Detector Workshop (NSS/MIC/RTSD). IEEE, 2016. http://dx.doi.org/10.1109/nssmic.2016.8069740.

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Zhu, Jianxin. "Nondestructive measurement for impurity concentration inserted in multilayer inhomogeneous material." In Photonics China '98, edited by BingKun Zhou and Ray T. Chen. SPIE, 1998. http://dx.doi.org/10.1117/12.317980.

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Jie, Bin, and Chih-tang Sah. "Implementin spatial variation of impurity concentration in MOS transistor modeling." In 2006 8th International Conference on Solid-State and Integrated Circuit Technology Proceedings. IEEE, 2006. http://dx.doi.org/10.1109/icsict.2006.306100.

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Abernathy, Cammy R., Mark J. Overberg, John D. Mackenzie, Uwe Hoemmerich, Stephen J. Pearton, R. G. Wilson, and John M. Zavada. "Effect of impurity concentration on 1.54 um emission from GaN:Er." In Symposium on Integrated Optoelectronics, edited by Shibin Jiang. SPIE, 2000. http://dx.doi.org/10.1117/12.382882.

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Zhu, Lin, Jeong Ho You, and Jinghong Chen. "First-Principles Calculations and Molecular Dynamics Simulations on Effect of Hydrogen Impurity in Lead Titanate Films." In ASME 2016 International Mechanical Engineering Congress and Exposition. American Society of Mechanical Engineers, 2016. http://dx.doi.org/10.1115/imece2016-67796.

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Properties of ferroelectric films are highly influenced by inevitable defects, such as hydrogen impurity. This study is focused on theoretical and numerical studies to probe effects of hydrogen contamination on ferroelectric stability in PbTiO3 (PTO) films using the first-principles effective Hamiltonian. First-principles calculations are performed to determine the possible position, formation energy, and mobility of hydrogen impurity atom, and the calculated results are used as inputs to molecular dynamics (MD) simulations in a large system. The hydrogen atom is able to move along the polarization with small energy barriers. The energy difference between a hydrogen contaminated PTO and a pure PTO is considered as an energy penalty term induced by hydrogen contamination and has been added to the effective Hamiltonian. Then, the MD effective Hamiltonian with the energy penalty is employed in MD simulations to investigate the effects of hydrogen contamination on the ferroelectric responses of PTO films with various thicknesses and temperatures. The hysteresis loops are presented and analyzed for PTO films with various concentrations of hydrogen impurities and thicknesses. Hydrogen contamination reduces the remnant polarization, especially for thin films. As the concentration of hydrogen impurities increases, the critical thickness increases. By analyzing the vertical cross section snapshots, it has been found that the hydrogen impurity atoms near interfaces affect the polarization throughout the entire PTO films.
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Jackson, Beulah, and T. Jayanthy. "A novel method for water impurity concentration using microstrip resonator sensor." In 2010 Recent Advances in Space Technology Services and Climate Change (RSTSCC). IEEE, 2010. http://dx.doi.org/10.1109/rstscc.2010.5712872.

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Sen, Arnesh, Aishik Das, and Jayoti Das. "MOSFET GIDL Current Variation with Impurity Doping Concentration – A Novel Approach." In 2019 International Conference on Power Electronics, Control and Automation (ICPECA). IEEE, 2019. http://dx.doi.org/10.1109/icpeca47973.2019.8975525.

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Wu, Fei-Fei, Wenzhen Song, De-chun Li, Jingxuan Yan, Jiaxiong Fang, and Guosen Xu. "Dependence of Fermi level of Hg0.8Cd0.2Te on impurity concentration and temperature." In Aerospace Sensing, edited by Eustace L. Dereniak and Robert E. Sampson. SPIE, 1992. http://dx.doi.org/10.1117/12.137805.

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Reports on the topic "Concentration impurete"

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Pendley, Bradford D., Hector D. Abruna, John D. Norton, Wendy E. Benson, and Henry S. White. Analysis of Voltammetric Half-Wave Potentials in Low Ionic Strength Solutions and Voltammetric Measurement of Ion Impurity Concentrations. Fort Belvoir, VA: Defense Technical Information Center, November 1990. http://dx.doi.org/10.21236/ada229774.

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Pendley, Bradford D., Hector D. Abruna, John D. Norton, Wendy E. Benson, and Henry S. White. Analysis of Voltammetric Half-Wave Potentials in Low Ionic Strength Solutions and Voltammetric Measurement of Ion Impurity Concentrations. Fort Belvoir, VA: Defense Technical Information Center, November 1990. http://dx.doi.org/10.21236/ada229908.

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