Relevant bibliographies by topics / Copper interconnect systems

Contents

  1. Journal articles
  2. Dissertations / Theses
  3. Book chapters
  4. Conference papers

Academic literature on the topic 'Copper interconnect systems'

Author: Grafiati
Published: 4 June 2021
Last updated: 11 February 2022

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Journal articles on the topic "Copper interconnect systems"

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Mohammed, Ilyas. "Fine Pitch Copper Interconnects for Next Generation Package-on-Package (PoP)." International Symposium on Microelectronics 2012, no. 1 (2012): 001137–42. http://dx.doi.org/10.4071/isom-2012-thp43.

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For low power processors, stacking memory on top offers many advantages such as high performance due to memory-processor interface within package, small footprint and standard assembly. Package-on-package (PoP) is preferred method of stacking as it offers two discrete packages that are tested separately and can be sourced independently. However, current PoP interconnect technologies do not efficiently scale to meet the memory bandwidth requirements for new generations of multi-core applications processors. The current interconnect technologies such as stacking with smaller sized solder balls,
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Das, Debaprasad, and Hafizur Rahaman. "Investigating the Applicability of Graphene Nanoribbon as Signal and Power Interconnects for Nanometer Designs." Journal of Circuits, Systems and Computers 25, no. 02 (2015): 1650001. http://dx.doi.org/10.1142/s0218126616500018.

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In this work, we have investigated the applicability of graphene nanoribbon (GNR) as the interconnects for 16-nm ITRS technology node. GNR is proposed as the possible alternative to the traditional copper (Cu)-based interconnect systems in nanometer regime. In this paper, we have performed important studies on GNR for its applicability as power and signal interconnects. For the application of power interconnects, we have investigated the power supply voltage drop (IR drop) and simultaneous switching noise (SSN) in graphene-based interconnect system. We have performed crosstalk noise and oversh
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Fury, M. A., D. L. Scherber, and M. A. Stell. "Chemical-Mechanical Planarization of Aluminum-Based Alloys for Multilevel Metallization." MRS Bulletin 20, no. 11 (1995): 61–64. http://dx.doi.org/10.1557/s0883769400045607.

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As recently as 1993, the prevailing presumption among the semiconductor technical community was that then-current development efforts associated with aluminum lines and tungsten damascene vias needed to shift rapidly to copper multilevel interconnect schemes. This is exemplified by the June 1993 issue of the MRS Bulletin, which featured copper metallization as its theme. In the intervening years, however, that same technical community revised the Semiconductor Industry Association (SIA) roadmap and placed renewed emphasis on the use of an all-aluminum interconnect scheme. This was done largely
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Zeng, Hao, Chao Lv, Yan Gao, Ting Yi Dong, Yong Hui Wang, and Xing Quan Wang. "Ultrahigh Purity Copper Alloy Target Used Innanoscale ULSI Interconnects." Materials Science Forum 815 (March 2015): 22–29. http://dx.doi.org/10.4028/www.scientific.net/msf.815.22.

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Current ULSI circuits have features with dimensions in the nanoscale region. As the critical dimension shrinks, Cu BEOL systems face reliability impacts. Alloying has been proved to be a promising technique to retard grain boundary electro-migration (EM). In this paper, dilute Cu Alloys such as Cu-Al, Cu-Mn for dual-damascene interconnect applications have been investigated. The alloy chosen principle for nanoscale interconnects has been discussed. The ultrahigh purity copper alloy target properties including purity, alloy composition, grain size and sputtering performance were investigated, t
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Zama, S., D. F. Baldwin, T. Hikami, and H. Murata. "Flip chip interconnect systems using copper wire stud bump and lead free solder." IEEE Transactions on Electronics Packaging Manufacturing 24, no. 4 (2001): 261–68. http://dx.doi.org/10.1109/6104.980034.

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Flinn, Paul A. "Measurement and interpretation of stress in copper films as a function of thermal history." Journal of Materials Research 6, no. 7 (1991): 1498–501. http://dx.doi.org/10.1557/jmr.1991.1498.

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Since copper has some advantages relative to aluminum as an interconnection material, it is appropriate to investigate its mechanical properties in order to be prepared in advance for possible problems, such as the cracks and voids that have plagued aluminum interconnect systems. A model previously used to interpret the behavior of aluminum films proves to be, with minor modification, also applicable to copper. Although the thermal expansion of copper is closer to that of silicon and, consequently, the thermally induced strains are smaller, the much larger elastic modulus of copper results in
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Wang, Shi-Qing. "Barriers Against Copper Diffusion into Silicon and Drift Through Silicon Dioxide." MRS Bulletin 19, no. 8 (1994): 30–40. http://dx.doi.org/10.1557/s0883769400047710.

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The Semiconductor Industry Association (SIA) roadmap calls for the incorporation of Cu plugs (vias) integrated with interconnects in 1997. Copper is being evaluated for ULSI metallization because of its lower bulk electrical resistivity and its superior resistance to electromigration and stress voiding as compared to commonly used aluminum and its alloys. One of the major drawbacks of Cu is its fast diffusion in Si and drift in SiO2-based dielectrics, resulting in the deterioration of devices at low temperatures. Hence a diffusion barrier is necessary between Cu and Si or SiO2. Figure 1 is a c
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Aubel, Oliver, Eberhard Bugiel, Dietmar Krüger, Wolfgang Hasse, and Martina Hommel. "Investigation of the influence of thermal treatment on interconnect-barrier interfaces in copper metallization systems." Microelectronics Reliability 46, no. 5-6 (2006): 768–73. http://dx.doi.org/10.1016/j.microrel.2005.10.010.

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Ghannam, Ayad, Alessandro Magnani, David Bourrier, and Thierry Parra. "Wafer Level 3D System Integration using a Novel 3D-RDL Technology." International Symposium on Microelectronics 2015, no. 1 (2015): 000092–97. http://dx.doi.org/10.4071/isom-2015-tp36.

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A new wafer-level 3D system integration process that relies on a novel multi-level 3D redistribution layer technology (3D-RDL) to interconnect chips together as well as to the substrate was developed. The 3D-RDL technology is based on a single electroplating step that allows routing high density, auto-adaptive vertical copper interconnects (20 μm Line/Space “L/S”) at the edge of known-good dies as well as redistribution layer on top of the die and the substrate. Furthermore, this technology enables 3D interconnection of stacked dies using a single 3D-RDL layer. Additionally, high performance 3
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Olivas, Richard, Rudy Salas, Dan Muse, et al. "Structural Electronics through Additive Manufacturing and Micro-Dispensing." International Symposium on Microelectronics 2010, no. 1 (2010): 000940–46. http://dx.doi.org/10.4071/isom-2010-tha5-paper6.

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Implementing electronics systems that are conformal with curved and complex surfaces is difficult if not impossible with traditional fabrication techniques, which require stiff, two dimensional printed circuit boards (PCB). Flexible copper based fabrication is currently available commercially providing conformance, but not simultaneously stiffness. Consequently, these systems are susceptible to reliability problems if bent or stretched repeatedly. The integration of Additive Manufacturing (AM) combined with Direct Print (DP) micro-dispensing can provide shapes of arbitrary and complex form whi
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Dissertations / Theses on the topic "Copper interconnect systems"

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Waechtler, Thomas, Shao-Feng Ding, Lutz Hofmann, et al. "ALD-grown seed layers for electrochemical copper deposition integrated with different diffusion barrier systems." Universitätsbibliothek Chemnitz, 2011. http://nbn-resolving.de/urn:nbn:de:bsz:ch1-qucosa-68040.

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The deposition of Cu seed layers for electrochemical Cu deposition (ECD) via atomic layer deposition (ALD) of copper oxide and subsequent thermal reduction at temperatures between 110 and 120°C was studied on different diffusion barrier systems. While optimization of the process is required on TaN with respect to reduction and plating, promising results were obtained on blanket PVD Ru. The plating results on layers of ALD Cu with underlying Ru even outperformed the ones achieved on PVD Cu seed layers with respect to morphology and resistivity. Applying the processes to via and line patterns ga
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Mueller, Steve, Thomas Waechtler, Lutz Hofmann, et al. "Thermal ALD of Cu via Reduction of CuxO films for the Advanced Metallization in Spintronic and ULSI Interconnect Systems." Universitätsbibliothek Chemnitz, 2012. http://nbn-resolving.de/urn:nbn:de:bsz:ch1-qucosa-84003.

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In this work, an approach for copper atomic layer deposition (ALD) via reduction of CuxO films was investigated regarding applications in ULSI interconnects, like Cu seed layers directly grown on diffusion barriers (e. g. TaN) or possible liner materials (e. g. Ru or Ni) as well as non-ferromagnetic spacer layers between ferromagnetic films in GMR sensor elements, like Ni or Co. The thermal CuxO ALD process is based on the Cu (I) β-diketonate precursor [(nBu3P)2Cu(acac)] and a mixture of water vapor and oxygen ("wet O2") as co-reactant at temperatures between 100 and 130 °C. Highly efficient c
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Mueller, Steve, Thomas Waechtler, Lutz Hofmann, et al. "Thermal ALD of Cu via Reduction of CuxO films for the Advanced Metallization in Spintronic and ULSI Interconnect Systems." Technische Universität Chemnitz, 2011. https://monarch.qucosa.de/id/qucosa%3A19675.

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In this work, an approach for copper atomic layer deposition (ALD) via reduction of CuxO films was investigated regarding applications in ULSI interconnects, like Cu seed layers directly grown on diffusion barriers (e. g. TaN) or possible liner materials (e. g. Ru or Ni) as well as non-ferromagnetic spacer layers between ferromagnetic films in GMR sensor elements, like Ni or Co. The thermal CuxO ALD process is based on the Cu (I) β-diketonate precursor [(nBu3P)2Cu(acac)] and a mixture of water vapor and oxygen ("wet O2") as co-reactant at temperatures between 100 and 130 °C. Highly efficient c
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Bashir, Muhammad Muqarrab. "Modeling reliability in copper/low-k interconnects and variability in cmos." Diss., Georgia Institute of Technology, 2011. http://hdl.handle.net/1853/41092.

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The impact of physical design characteristics on backend dielectric reliability was modeled. The impact of different interconnect geometries on backend low-k time dependent dielectric breakdown was reported and modeled. Physical design parameters that are crucial to backend dielectric reliability were identified. A methodology was proposed for determining chip reliability but combining the insights gathered by modeling the impact of physical design on backend dielectric breakdown. A methodology to model variation in device parameters and characteristics was proposed. New methods of electric
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Li, Kecheng. "Direct Liquid Evaporation Chemical Vapor Deposition(DLE-CVD) of Nickel, Manganese and Copper-Based Thin Films for Interconnects in Three-Dimensional Microelectronic Systems." Thesis, Harvard University, 2016. http://nrs.harvard.edu/urn-3:HUL.InstRepos:33493366.

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Electrical interconnects are an intrinsic part of any electronic system. These interconnects have to perform reliably under a wide range of environmental conditions and survive stresses induced from thermal, mechanical, corrosive and electrical factors. Semiconductor technology is predominantly planar in nature, posing a severe limitation to the degree of device integrations into systems such as micro-processors or memories. 3D transistor FinFET (Fin type Field Effect Transistors) has been used by Intel since the advent of its 22 nm technology node, and has now advanced further down to 14 nm.
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Baum, Mario. "Strukturierungs- und Aufbautechnologien von 3-dimensional integrierten fluidischen Mikrosystemen." Doctoral thesis, Universitätsbibliothek Chemnitz, 2016. http://nbn-resolving.de/urn:nbn:de:bsz:ch1-qucosa-161996.

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Die vorliegende Arbeit beschreibt die Übertragung der aus der Siliziumtechnologie bekannten Präzision der Strukturierung und die Zuverlässigkeit der Verbindungstechnologie auf andere Materialien wie Kupfer und PMMA. Diese Untersuchung ist auf die Entwicklung der Teiltechnologien Strukturierung und Integration fokussiert und konzentriert sich insbesondere auf die Kombination von Mikrostrukturierung und dreidimensionalen Aufbautechniken einschließlich vertikaler fluidischer Durchkontaktierungen bei den Materialien Silizium, Kupfer und Kunststoff (PMMA). Eine begleitende Charakterisierung und mes
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Baum, Mario. "Strukturierungs- und Aufbautechnologien von 3-dimensional integrierten fluidischen Mikrosystemen." Doctoral thesis, Universitätsverlag der Technischen Universität Chemnitz, 2014. https://monarch.qucosa.de/id/qucosa%3A20212.

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Die vorliegende Arbeit beschreibt die Übertragung der aus der Siliziumtechnologie bekannten Präzision der Strukturierung und die Zuverlässigkeit der Verbindungstechnologie auf andere Materialien wie Kupfer und PMMA. Diese Untersuchung ist auf die Entwicklung der Teiltechnologien Strukturierung und Integration fokussiert und konzentriert sich insbesondere auf die Kombination von Mikrostrukturierung und dreidimensionalen Aufbautechniken einschließlich vertikaler fluidischer Durchkontaktierungen bei den Materialien Silizium, Kupfer und Kunststoff (PMMA). Eine begleitende Charakterisierung und mes
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Henderson, Lucas Benjamin. "Deposition and properties of Co- and Ru-based ultra-thin films." 2009. http://hdl.handle.net/2152/7836.

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Future copper interconnect systems will require replacement of the materials that currently comprise both the liner layer(s) and the capping layer. Ruthenium has previously been considered as a material that could function as a single material liner, however its poor ability to prevent copper diffusion makes it incompatible with liner requirements. A recently described chemical vapor deposition route to amorphous ruthenium-phosphorus alloy films could correct this problem by eliminating the grain boundaries found in pure ruthenium films. Bias-temperature stressing of capacitor structures using
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Book chapters on the topic "Copper interconnect systems"

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Tan, Sheldon, Mehdi Tahoori, Taeyoung Kim, Shengcheng Wang, Zeyu Sun, and Saman Kiamehr. "Fast EM Immortality Analysis for Multi-Segment Copper Interconnect Wires." In Long-Term Reliability of Nanometer VLSI Systems. Springer International Publishing, 2019. http://dx.doi.org/10.1007/978-3-030-26172-6_4.

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Arti Joshi and Gaurav Soni. "A Comparative Analysis of Copper and Carbon Nanotubes-Based Global Interconnects in 32 nm Technology." In Advances in Intelligent Systems and Computing. Springer Singapore, 2016. http://dx.doi.org/10.1007/978-981-10-0448-3_35.

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Kumar, Raj, and Shashi Bala. "Bundled SWCNT for Global VLSI Interconnects." In Advances in Computer and Electrical Engineering. IGI Global, 2020. http://dx.doi.org/10.4018/978-1-7998-1393-4.ch008.

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Carbon nanotube (CNT) has been declared the most attractive and suitable material for VLSI sub-micron technology. Because of CNT's phenomenal physical, electrical, and mechanical properties, it is more advantageous than copper interconnect material. In this chapter, RLC equivalent model of bundled single-wall CNT (SWCNT) is presented by using driver-interconnect-load (DIL) system with CMOS driver. The crosstalk delay is calculated for two-line bus architecture made of two parallel lines (i.e., upper as aggressor and lower as victim). From the simulation, it has been observed that crosstalk delay increases with increase in interconnect length and transition time, whereas it decreases with increased spacing between the lines (aggressor and victim). However, crosstalk delay decreases as the number of tubes in a bundle increases.
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Umachandran, Krishnan, Igor Jurčić, Valentina Della Corte, and Debra Sharon Ferdinand-James. "Industry 4.0." In Advances in Civil and Industrial Engineering. IGI Global, 2019. http://dx.doi.org/10.4018/978-1-5225-6207-8.ch006.

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Industry 4.0 can be considered the 21st century's industrial revolution and will soon be the new form of manufacturing delight. The definitive customer would experience manufacturing requests determined by artificial intelligence, machine learning, and automated technologies linked with data science support for gauging customer necessities. Phenomenally, Industry 4.0 is rapidly changing the firm's management and organizational systems, and competencies, as well as making its environment much more explored, even if more complexed than in the past. This new industrial revolution would possess systems with transformative technologies for managing interconnected systems between its physical assets and computational capabilities. Such enterprises would require skilled workforce to improve and operate advanced manufacturing tools and systems, and investigate the machine data, clients, and global capitals, resulting in an escalating need for trained employees proficient in cross-functional capacities and with competencies to cope new processes and IT systems.
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Conference papers on the topic "Copper interconnect systems"

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Gambino, J. P. "Copper interconnect technology for the 22 nm node." In 2011 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA). IEEE, 2011. http://dx.doi.org/10.1109/vtsa.2011.5872228.

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Shen, Y. L. "Modeling of Thermo-Mechanical Stresses in Copper Interconnect/Low-k Dielectric Systems." In ASME 2005 Pacific Rim Technical Conference and Exhibition on Integration and Packaging of MEMS, NEMS, and Electronic Systems collocated with the ASME 2005 Heat Transfer Summer Conference. ASMEDC, 2005. http://dx.doi.org/10.1115/ipack2005-73450.

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Systematic finite element analyses are carried out to model the thermomechanical stresses in on-chip copper interconnect systems. Constitutive behavior of encapsulated copper films, determined by experimentally measuring the stress-temperature response during thermal cycling, is used in the model for predicting stresses in copper interconnect/low-k dielectric structures. Various combinations of oxide and polymer-based low-k dielectric schemes are considered. The evolution of stresses and deformation pattern in the dual-damascene copper, barrier layers, and the dielectrics is seen to have direc
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Shealy, D. L., H. T. Tohver, D. A. Hill, et al. "Physical Properties Of Ceramic-Glass-Copper Micro-Interconnect Systems For VLSI/VHSIC Packaging Applications." In 1988 Los Angeles Symposium--O-E/LASE '88, edited by Carl A. Kukkonen. SPIE, 1988. http://dx.doi.org/10.1117/12.943947.

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Lall, Pradeep, Shantanu Deshpande, and Luu Nguyen. "Copper, Silver, and PCC Wirebonds Reliability in Automotive Underhood Environments." In ASME 2018 International Technical Conference and Exhibition on Packaging and Integration of Electronic and Photonic Microsystems. American Society of Mechanical Engineers, 2018. http://dx.doi.org/10.1115/ipack2018-8358.

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Wire bonding is popular first-level interconnect method used in the semiconductor device packaging. Gold (Ag) wire is often used in high-reliability applications. Typical wire diameters vary between 0.8mil to 2mil. Recent increases in the gold-price have motivated the industry to search for alternate materials candidates for use in wirebonding. Three of the leading candidates are Silver (Ag), Copper (Cu), and Palladium Coated Copper (PCC). The new material candidates are inexpensive in comparison with gold and may have better electrical, and thermal properties, which is advantageous for fine p
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Roy, Nilabh, Obehi Dibua, Chee Seng Foong, and Michael Cullinan. "Preliminary Results on the Fabrication of Interconnect Structures Using Microscale Selective Laser Sintering." In ASME 2017 International Technical Conference and Exhibition on Packaging and Integration of Electronic and Photonic Microsystems collocated with the ASME 2017 Conference on Information Storage and Processing Systems. American Society of Mechanical Engineers, 2017. http://dx.doi.org/10.1115/ipack2017-74173.

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The ability to create 3D ICs can significantly increase transistor packing density, reduce chip area and power dissipation leading to possibilities of large-scale on-chip integration of different systems. A promising process for this application is the microscale additive manufacturing (AM) of 3D interconnect structures and capability of writing 3D metal structures with feature sizes of approximately 1 μm on a variety of substrates. Current microscale AM techniques are limited in their capabilities to produce 3D conductive interconnect structures. This paper presents the design and development
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Maeda, Koji, Shoji Yamamoto, Naohiro Kohmu, Kei Nishimura, and Izumi Fukasaku. "An Active-Copper-Cable with Continuous-Time-Linear-Equalizer IC for 30-AWG 7-meters Reach Interconnect of 400-Gbit/s QSFP-DD." In 2019 IEEE Asia Pacific Conference on Circuits and Systems (APCCAS). IEEE, 2019. http://dx.doi.org/10.1109/apccas47518.2019.8953149.

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Lall, Pradeep, Ryan Lowe, Jeff Suhling, and Kai Goebel. "Prognostication Based on Resistance-Spectroscopy for High Reliability Electronics Under Shock-Impact." In ASME 2009 International Mechanical Engineering Congress and Exposition. ASMEDC, 2009. http://dx.doi.org/10.1115/imece2009-13351.

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Leading indicators of failure have been developed based on high-frequency characteristics, and system-transfer function derived from resistance spectroscopy measurements during shock and vibration. The technique is intended for condition monitoring in high reliability applications where the knowledge of impending failure is critical and the risks in terms of loss-of-functionality are too high to bear. Previously, resistance spectroscopy measurements [Constable 1992, Lizzul 1994, Prassana 1995] have been used during thermal cycling tests to monitor damage progression due to thermo-mechanical st
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Lall, Pradeep, Ryan Lowe, Jeff Suhling, and Kai Goebel. "Leading-Indicators Based on Impedance Spectroscopy for Prognostication of Electronics Under Shock and Vibration Loads." In ASME 2009 InterPACK Conference collocated with the ASME 2009 Summer Heat Transfer Conference and the ASME 2009 3rd International Conference on Energy Sustainability. ASMEDC, 2009. http://dx.doi.org/10.1115/interpack2009-89308.

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Leading indicators of failure have been developed based on high-frequency characteristics, and system-transfer function derived from resistance spectroscopy measurements during shock and vibration. The technique is intended for condition monitoring in high reliability applications where the knowledge of impending failure is critical and the risks in terms of loss-of-functionality are too high to bear. Previously, resistance spectroscopy measurements [Constable 1992, Lizzul 1994, Prassana 1995] have been used during thermal cycling tests to monitor damage progression due to thermo-mechanical st
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Roberts, Jordan C., Mohammad Motalab, Safina Hussain, Jeffrey C. Suhling, Richard C. Jaeger, and Pradeep Lall. "Characterization of Die Stresses in CBGA Packages due to Component Assembly and Heat Sink Clamping." In ASME 2011 Pacific Rim Technical Conference and Exhibition on Packaging and Integration of Electronic and Photonic Systems. ASMEDC, 2011. http://dx.doi.org/10.1115/ipack2011-52185.

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Microprocessor packaging in modern workstations and servers often consists of one or more large flip chip die that are mounted to a high performance ceramic chip carrier. The final assembly configuration features a complex stack up of flip chip area array solder interconnects, underfill, ceramic substrate, lid, heat sink, thermal interface materials, second level CBGA solder joints, organic PCB, etc., so that a very complicated set of loads is transmitted to the microprocessor chip. Several trends in the evolution of this packaging architecture have exacerbated die stress levels including the
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Lall, Pradeep, Sandeep Shantaram, Arjun Angral, Mandar Kulkarni, and Jeff Suhling. "Damage Accumulation and Life-Prediction Models for SnAgCu Leadfree Electronics Under Shock-Impact." In ASME 2009 InterPACK Conference collocated with the ASME 2009 Summer Heat Transfer Conference and the ASME 2009 3rd International Conference on Energy Sustainability. ASMEDC, 2009. http://dx.doi.org/10.1115/interpack2009-89307.

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Relative damage-index based on the leadfree interconnect transient strain history from digital image correlation, explicit finite-elements, cohesive-zone elements, and component’s survivability envelope has been developed for life-prediction of two-leadfree electronic alloy systems. Life prediction of pristine and thermally-aged assemblies, have been investigated. Solder alloy system studied include Sn1Ag0.5Cu, and 96.5Sn3.5Ag. Transient strains during the shock-impact have been measured using digital image correlation in conjunction with high-speed cameras operating at 50,000 fps. Both the bo
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