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Dissertations / Theses on the topic 'Copper Precursors'

Author: Grafiati

Published: 3 June 2025

Last updated: 31 July 2025

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1

Norman, John A. T., Melanie Perez, Stefan E. Schulz, and Thomas Waechtler. "New Precursors for CVD Copper Metallization." Universitätsbibliothek Chemnitz, 2008. http://nbn-resolving.de/urn:nbn:de:bsz:ch1-200801346.

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A novel CVD copper process is described using two new copper CVD precursors, KI3 and KI5, for the fabrication of IC or TSV (Through Silicon Via) copper interconnects. The highly conformal CVD copper can provide seed layers for subsequent copper electroplating or can be used to directly fabricate the interconnect in one step. These new precursors are thermally stable yet chemically reactive under CVD conditions, growing copper films of exceptionally high purity at high growth rates. Their thermal stability can allow for elevated evaporation temperatures to generate the high precurso

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2

Rickerby, Jenny. "Polymeric precursors for inkjet printing copper." Thesis, Imperial College London, 2003. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.405841.

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3

Kamada, Rui. "Copper(indium,gallium)selenide film formation from selenization of mixed metal/metal-selenide precursors." Access to citation, abstract and download form provided by ProQuest Information and Learning Company; downloadable PDF file, 226 p, 2009. http://proquest.umi.com/pqdweb?did=1654501631&sid=4&Fmt=2&clientId=8331&RQT=309&VName=PQD.

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4

Nix, R. M. "Rare-earth - copper alloys as catalyst precursors in the synthesis of methanol." Thesis, University of Cambridge, 1987. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.235010.

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A wide range of surface sensitive techniques (AES, LEED, A^, XPS, UPS and TDS) have been employed to study ultralhin films of copper with neodymium and the intimate interaction of neodymium oxide with a copper surface. This has involved the evaporation of the rare earth onto well defined surfaces of single crystal copper - Cu(100) and Cu(lll) -under ultrahigh vacuum conditions. Such systems may serve as a model for the fundamental processes occurring at the surface of methanol synthesis catalysts derived from intermetallic compounds of copper and rare earth metals. The work aims to characteris

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5

Coventry, David N. "Tertiary-phosphine gold(I) and copper(I) complexes : precursors for metal deposition." Thesis, University of Edinburgh, 2002. http://hdl.handle.net/1842/12017.

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Tertiary-phosphine stabilised gold and copper complexes have been prepared with the intention to deposit elemental metal from solution. These complexes were intended to be delivered as a component of an ink on to a suitable substrate by an ink-jet printing process. Testing the compatibility of these complexes with ink-jet technology has been undertaken by Avecia and Seiko-Epson (this project's industrial sponsors). Four methyl(tertiary-phosphine)gold(I) complexes with a general molecular formula, [R<sub>3</sub>PAuCH<sub>3</sub>] (R = Ph, Ph-<i>p</i>-F, Ph-<i>p</i>-OMe and Me) were prepared by

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6

Rosenberg, Chico L. "Novel precursors for chemical vapour deposition of the metals copper, nickel and cobalt." Thesis, Imperial College London, 2003. http://hdl.handle.net/10044/1/11893.

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7

Kotze, Hendrik de Vries. "Immobilized diimine complexes of palladium and copper as catalyst precursors for oxidation reactions." Thesis, Stellenbosch : University of Stellenbosch, 2011. http://hdl.handle.net/10019.1/6721.

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Thesis (MSc)--University of Stellenbosch, 2011.<br>ENGLISH ABSTRACT: In this thesis the synthesis of a wide range of model and siloxane functionalized N-(n-propyl)-1-(2-pyridyl and quinolyl)-imine ligands (L1-L6) are described. Functionalized ligands (L4-L6) were obtained by the reaction of the pyridyl and quinolyl aldehydes with 3-aminopropyltriethoxysilane. Model ligands were characterized by FT-IR and 1H NMR spectroscopy while 13C{1H} NMR spectroscopy was additionally used for functional ligand characterization. Functionalized complexes of both Pd(II) and Cu(I) were found to be more t

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8

Waechtler, Thomas, Yingzhong Shen, Alexander Jakob, et al. "Evaluation of Phosphite and Phosphane Stabilized Copper(I) Trifluoroacetates as Precursors for the Metal-Organic Chemical Vapor Deposition of Copper." Universitätsbibliothek Chemnitz, 2006. http://nbn-resolving.de/urn:nbn:de:swb:ch1-200600315.

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Copper has become the material of choice for metallization of high-performance ultra-large scale integrated circuits. As the feature size is continuously decreasing, metal-organic chemical vapor deposition (MOCVD) appears promising for depositing the Cu seed layer required for electroplating, as well as for filling entire interconnect structures. In this work, four novel organophosphane and organophosphite Cu(I) trifluoroacetates were studied as precursors for Cu MOCVD. Details are reported on CVD results obtained with Tris(tri-n-butylphosphane)copper(I)trifluoroacetate, (<sup>n</s

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9

Ryu, Jae-Yong. "Dioxin formation on copper (II) chloride from chlorinated phenol, dibenzo-p-dioxin and dibenzofuran precursors." Diss., Georgia Institute of Technology, 2002. http://hdl.handle.net/1853/19050.

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10

Plappert, Elisabeth-Charlotte. "Synthesis and characterization of copper and titanium compounds and their application as precursors in chemical vapor deposition /." [S.l.] : [s.n.], 1995. http://e-collection.ethbib.ethz.ch/show?type=diss&nr=10996.

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11

Khan, Imran. "Fundamental studies of surface enhanced resonanace raman scattering and the preparation and photodegradation of photolabile copper phthalocyanine pigment precursors." Thesis, University of Strathclyde, 2003. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.275124.

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12

Lima, Maria Jos? Santos. "S?ntese e caracteriza??o de TaC e ?xido misto de t?ntalo e cobre nanoestruturados a partir do precursor ox?lico de t?ntalo atrav?s de rea??es g?s-s?lido e s?lido-s?lido a baixa temperatura." Universidade Federal do Rio Grande do Norte, 2013. http://repositorio.ufrn.br:8080/jspui/handle/123456789/12797.

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Made available in DSpace on 2014-12-17T14:07:09Z (GMT). No. of bitstreams: 1 Maria JSL_DISSERT.pdf: 2126864 bytes, checksum: 5f05e8062e1e0a0ae6a41666703f3c86 (MD5) Previous issue date: 2013-06-20<br>Coordena??o de Aperfei?oamento de Pessoal de N?vel Superior<br>The research and development of nanostructured materials have been growing significantly in the last years. These materials have properties that were significantly modified as compared to conventional materials due to the extremely small dimensions of the crystallites. The tantalum carbide (TaC) is an extremely hard material that has

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13

Araujo, Vinícius Dantas de. "Síntese e caracterização de nanopartículas de Ce(1-x)CuxO2 e Ce(1-y)CoyO2: obtenção de hidrogênio através da reforma a vapor de etanol e oxidação preferencial de monóxido de carbono." Universidade de São Paulo, 2013. http://www.teses.usp.br/teses/disponiveis/18/18158/tde-28112013-100629/.

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Os materiais nanoestruturados vêm sendo extensivamente estudados, não somente pelas novas propriedades e suas possíveis aplicações tecnológicas, mas também pela busca de uma melhor compreensão dos aspectos físicos e químicos causados por suas reduzidas dimensões. A céria (CeO2) tem despertado grande interesse nas últimas décadas, pois tem papel vital em tecnologias emergentes para aplicações em setores que vão desde a área ambiental através do desenvolvimento de novos catalisadores, passando pela área energética com o desenvolvimento de células de combustível em estado sólido e em novas tecnol

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14

Fitzsimons, Nuala Patricia. "Copper hydride as a precursor for supported copper catalysts." Thesis, University of Cambridge, 1992. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.281998.

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15

Young, Valerie Lynne Vandigrifft. "The chemistry of metalorganic chemical vapor deposition from a copper alkoxide precursor." Diss., This resource online, 1992. http://scholar.lib.vt.edu/theses/available/etd-06062008-170227/.

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16

Sousa, Marco António Neves de. "Estudo de Cu2ZnSnS4 obtido através de precursores metálicos e binários." Master's thesis, Universidade de Aveiro, 2012. http://hdl.handle.net/10773/11002.

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Mestrado em Engenharia Física<br>presente dissertação tem como objetivo o estudo, de filmes finos de (CZTS) a partir de precursores elementares e binários. O trabalho aqui apresentado encontra-se dividido em duas partes. Na primeira parte foram crescidos nas mesmas condições dois filmes de CZTS com precursores elementares (cobre, , zinco, e estanho, ) e sulfurizados num forno tubular. Posteriormente foram analisados, morfológica e estruturalmente, tendo-se verificado a existência de CZTS e de fases secundarias. Concluiu-se que os filmes são idênticos pelo que o processo de produção é reprodutí

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17

Klein, Juliane. "Amyloid precursor protein (APP) and copper homeostasis in the human neuroblastoma cell line SH-SY5Y." Thesis, University of Newcastle upon Tyne, 2011. http://hdl.handle.net/10443/1201.

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Alzheimer’s disease (AD) is characterised by cerebellar accumulation and aggregation of amyloid beta (Aβ), a cleavage product of the transmembrane amyloid precursor protein (APP). APP contains a range of functional domains in its large extracellular portion, among which are two copper-binding motifs and one zinc-binding motif. The copper-binding motifs are present in the amino-terminal region of APP and within the Aβ region of the protein and readily reduce Cu(II) to Cu(I), thus APP and its cleavage products are linked to copper metabolism and have been hypothesised to participate in cellular

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18

Ribeiro, Danniely de Melo. "SrSnO3: Cu obtido pelo método dos precursores poliméricos, para a redução catalítica de NO com CO." Universidade Federal da Paraíba, 2011. http://tede.biblioteca.ufpb.br:8080/handle/tede/7065.

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Made available in DSpace on 2015-05-14T13:21:14Z (GMT). No. of bitstreams: 1 arquivototal.pdf: 3299520 bytes, checksum: 187bb191b68b3815838de32a36c06f36 (MD5) Previous issue date: 2011-12-09<br>Coordenação de Aperfeiçoamento de Pessoal de Nível Superior - CAPES<br>Strontium stannate (SrSnO3) is a perovskita with orthorhombic structure (Pbnm), which has been extensively studied due to its potential technological applications, such as: thermally stable capacitors, sensors for various gases, including CO, NOx, Cl2, H2 and humidity. Nowadays, it has been studied as a promising material to be u

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19

Wächtler, Thomas. "Thin Films of Copper Oxide and Copper Grown by Atomic Layer Deposition for Applications in Metallization Systems of Microelectronic Devices." Doctoral thesis, Universitätsbibliothek Chemnitz, 2010. http://nbn-resolving.de/urn:nbn:de:bsz:ch1-201000725.

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Copper-based multi-level metallization systems in today’s ultralarge-scale integrated electronic circuits require the fabrication of diffusion barriers and conductive seed layers for the electrochemical metal deposition. Such films of only several nanometers in thickness have to be deposited void-free and conformal in patterned dielectrics. The envisaged further reduction of the geometric dimensions of the interconnect system calls for coating techniques that circumvent the drawbacks of the well-established physical vapor deposition. The atomic layer deposition method (ALD) allows depositing f

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20

Pires, Heber Silas. "Síntese e caracterização de precursores e magnetos moleculares contendo ligantes do tipo oxamato." Universidade Federal de Juiz de Fora (UFJF), 2008. https://repositorio.ufjf.br/jspui/handle/ufjf/5547.

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Wächtler, Thomas. "Thin Films of Copper Oxide and Copper Grown by Atomic Layer Deposition for Applications in Metallization Systems of Microelectronic Devices." Doctoral thesis, Universitätsverlag der Technischen Universität Chemnitz, 2009. https://monarch.qucosa.de/id/qucosa%3A19323.

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Copper-based multi-level metallization systems in today’s ultralarge-scale integrated electronic circuits require the fabrication of diffusion barriers and conductive seed layers for the electrochemical metal deposition. Such films of only several nanometers in thickness have to be deposited void-free and conformal in patterned dielectrics. The envisaged further reduction of the geometric dimensions of the interconnect system calls for coating techniques that circumvent the drawbacks of the well-established physical vapor deposition. The atomic layer deposition method (ALD) allows depositing

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22

Dhakal, Dileep, Thomas Waechtler, Schulz Stefan E, Robert Mothes, Heinrich Lang, and Thomas Gessner. "In-situ XPS Investigation of the Surface Chemistry of a Cu(I) Beta-Diketonate Precursor and the ALD of Cu2O." Universitätsbibliothek Chemnitz, 2014. http://nbn-resolving.de/urn:nbn:de:bsz:ch1-qucosa-147534.

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This poster was presented in the Materials for Advanced Metallization (MAM) 2014 Conference in Chemnitz, Germany. Abstract: Atomic Layer Deposition (ALD) has emerged as an ubiquitous method for the deposition of conformal and homogeneous ultra-thin films on complex topographies and large substrates in microelectronics. Electrochemical deposition (ECD) is the first choice for the deposition of copper (Cu) into the trenches and vias of the interconnect system for ULSI circuits. The ECD of Cu necessitates an electrically conductive seed layer for filling the interconnect structures. ALD is now c

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23

Kováčová, Silvia. "Příprava vodivých struktur bezproudovým pokovením vytištěného prekurzoru." Master's thesis, Vysoké učení technické v Brně. Fakulta chemická, 2021. http://www.nusl.cz/ntk/nusl-449338.

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The subject of this diploma thesis is the preparation of conductive structures by electroless plating of an extruded precursor. The experimental part deals with the preparation of standard patterns based on the length of immersion time in a coppering bath. The precursor layers were applied with Fujifilm Dimatix to various receiver substrates. The individual substrates with the precursor layer were immersed in the copper solution within different time intervals. The structure of the layers of grown copper and their thickness was characterized by a profilometer.

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24

Dhakal, Dileep, Thomas Waechtler, Schulz Stefan E, et al. "Surface chemistry of a Cu(I) beta-diketonate precursor and the atomic layer deposition of Cu2O on SiO2 studied by x-ray photoelectron spectroscopy." Universitätsbibliothek Chemnitz, 2014. http://scitation.aip.org/content/avs/journal/jvsta/32/4/10.1116/1.4878815?aemail=author.

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This article has been published online on 21st May 2014, in Journal of Vacuum Science & Technology A: Vac (Vol.32, Issue 4): http://scitation.aip.org/content/avs/journal/jvsta/32/4/10.1116/1.4878815?aemail=author DOI: 10.1116/1.4878815 This article may be accessed via the issue's table of contents at this link: http://scitation.aip.org/content/avs/journal/jvsta/32/4?aemail=author The surface chemistry of the bis(tri-n-butylphosphane) copper(I) acetylacetonate, [(nBu3P)2Cu(acac)], and the thermal atomic layer deposition (ALD) of Cu2O using this Cu precursor as reactant and wet oxygen as co-

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25

El, Hadigui Saïd. "Etude physico-chimique de ceramiques fines (mgtio : :(3), mgtio::(4), yba::(2)cu::(3)o::(x)) prepares par decomposition de precurseurs organometalliques." Université Louis Pasteur (Strasbourg) (1971-2008), 1988. http://www.theses.fr/1988STR13075.

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Les 3 methodes de synthese exposees permettent d'abaisser les temperatures de formation des materiaux et d'ameliorer leurs qualites microstructurales. Pour les titanates de mg, l'augmentation de la reactivite des poudres a basse temperature a permis de mettre en evidence la formation intermediaire de phases metastables. On a etabli une correlation etroite entre la granularite des poudres et leur bonne densification lors du frittage. Pour le supraconducteur yba::(2)cu::(3)o::(x), la synthese par voie carboxylique permet d'abaisser la temperature de reaction et de conduire a des poudres peu aggl

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26

Mohammedi, Ourida. "Catalyse de cetonisation des olefines terminales par des complexes du rhodium ou du palladium associes a differents cocatalyseurs systemes homogenes-systemes heterogenes." Paris 6, 1987. http://www.theses.fr/1987PA066532.

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Developpement et comparaison de plusieurs voies de cetonisation. Modulation de la selectivite par modification des ligands ancillaires du palladium. Influence du solvant (alcoolique ou aprotique) sur la selectivite et l'activite du catalyseur. Recherche des intermediaires de reaction

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27

Labrize, Florence. "Nouveaux précurseurs volatils de l'oxyde supraconducteur YBa2Cu3O(7-x) pour le procédé M. O. C. V. D : synthèse et caractérisation de fluoroalcoxydes, (beta)-dicétonates et (beta)-dicétonatoalcoxydes homo et hétérométalliques de l'yttrium, du baryum et du cuivre." Grenoble INPG, 1996. http://www.theses.fr/1996INPG0015.

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La m. O. C. V. D. D'yba#2cu#3o#7#-#x necessite la synthese de precurseurs volatils et stables thermiquement, probleme crucial dans le cas du baryum, le tetramethylheptanedionate de baruym actuellement utilise presente une instabilite thermique entrainant des problemes de reproductibilite des depots. Afin d'ameliorer la volatilite des precurseurs du baryum, plusieurs voies ont ete explorees. La saturation de la sphere de coordination du ba(thd)#2 par l'action de bases de lewis bidentes a conduit a des adduits ba(thd)#2l#x#y, dont ba(thd)#2(hochmech#2nme#2)#2 et ba(thd)#2(tmeda)#2, caracterises

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28

Galindo, Virginie. "Synthèse par MOCVD (conventionnelle et à injection), caractérisations structurale et physique de films supraconducteurs d'YBa2Cu3O(7-(delta)) et de multicouches YBa2Cu3O(7-(delta))/PrBa2Cu3O(7-(delta)." Grenoble INPG, 1998. http://www.theses.fr/1998INPG0167.

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Deux types de reacteurs de depot chimique en phase vapeur ont ete utilises pour la realisation de films minces d'yba#2cu#3o#7## et prba#2cu#3o#7# ## #, ainsi que de multicouches alternant ces deux composes. La source du premier reacteur est constituee de quatre fours contenant chacun un des precurseurs organometallique (m-tetramethyl-heptane-dionate) sous forme de poudre. La source du second reacteur est constituee d'un reservoir contenant un melange liquide solvant - precurseur, sous pression, a temperature ambiante, relie a une micro-vanne ou injecteur. Cette derniere source permet de contro

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29

Wu, Liang-Wei, and 吳亮威. "Synthesis of Copper Nanoparticles by Using Copper Isostearate as Precursors and Preparation of Copper Inks." Thesis, 2017. http://ndltd.ncl.edu.tw/handle/qt2q7y.

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30

Fu, Ying-Hui, and 傅瑛惠. "The effect of precursors on copper nanocatalyst prepared with polyol process for VOC oxidation." Thesis, 2007. http://ndltd.ncl.edu.tw/handle/50224878176965670978.

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碩士<br>國立中興大學<br>環境工程學系所<br>95<br>Accompany the higher environmental consciousness, the environmental legislation get better exact in our country.For the past few years, Taiwan government has focused on the emission of inorganic pollutants and target pollutants in improving air quality. At present we targetted on the emission of volatile organic compounds and stink pollutants. A catalytic incinerator is one of the best skills in control of VOCs. This study is maily focuses on the preparation of catalyst by polyol process with different precursors. The polyol process is a easy method to operate,

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31

Lin, Rong Jing, and 林容靖. "Copper-Catalyzed Oxidative Povarov Reactions and Synthesis of Novel Precursors of Silicon Nitride Film." Thesis, 2015. http://ndltd.ncl.edu.tw/handle/35354503763208539699.

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碩士<br>國立清華大學<br>化學系<br>103<br>Abstract This thesis is divided into two sections, the first chapter is copper-catalyzed Povarov reaction between N-alkyl N-methylaniline and saturated heterocyclic ring. The second chapter explores synthesis the novel precursors and then uses atomic layer deposition technology to grow silicon nitride film. Chapter 1 We develop Cu-catalyzed oxidative Povarov reactions between N-alkyl N-methylanilines and saturated oxa- or thiacycles with tert-butyl hydroperoxide (TBHP). Importantly, these reactions do not involve [4π] or [2π] motifs as the initial reage

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Guy, Kathryn Ann. "Palladium-copper-polyvinylpyrrolidone colloids : catalysts and catalyst precursors for nitrate reduction and related reactions /." 2008. http://gateway.proquest.com/openurl?url_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:dissertation&res_dat=xri:pqdiss&rft_dat=xri:pqdiss:3337754.

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Thesis (Ph. D.)--University of Illinois at Urbana-Champaign, 2008.<br>Source: Dissertation Abstracts International, Volume: 69-11, Section: B, page: 6789. Adviser: John R. Shapley. Includes bibliographical references. Available on microfilm from Pro Quest Information and Learning.

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Desmet, Mieke. "The preparation of carbene complexes from azolyl- and thienyllithium precursors." Thesis, 2012. http://hdl.handle.net/10210/6083.

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Ph.D.<br>This study comprises the preparation and characterization of new carbene complexes of iron, molybdenum, gold, copper and silver from azolyl and thienyl precursors. In addition, the syntheses of aminoacyl chelate and metallacyclic iron compounds as well as unique 6-membered dimeric and 18-membered trimeric thienyl gold compounds are reported. Furthermore, di(vinyl)carbene complexes, which are not yet known for gold and which are very rare for most other metals, are also described. In contrast to most other carbene complexes that result from precursors in which the heteroatom is situate

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34

Kuo, Wen-Chieh, та 郭文傑. "Investigation of Ligand Surface Chemistry: Implications for the Use of β-Diketonate Copper(I) Complexes as Precursors for Copper Thin-film Growth". Thesis, 2002. http://ndltd.ncl.edu.tw/handle/33430945007801439098.

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碩士<br>國立中山大學<br>化學系研究所<br>90<br>Two most useful families of copper CVD precursors that have been utilized widely are the Cu(I) and Cu(II) β-diketone complexes. The Cu(II)precursors require the use of an external reducing agent such as hydrogen to deposit copper films, i.e. CuII(β-diketonate)2 + H2 → Cu0+2 β-diketonate. The Cu(I) precursors deposit pure copper films without the use of an external agent via a disproportionation reaction that produces a Cu(II)β-diketonate in conjunction with other organic byproducts, i.e. 2CuI(β-diketonate)L → Cu0+ CuII(β-diketonate)2+2L where L is a typical Lewi

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Sibokoza, Simon Bonginkosi. "Synthesis and characterization of cobalt and copper sulfide nanoparticles with reproducible stoichiometry using sulfur containing single-source precursors." Thesis, 2012. http://hdl.handle.net/10352/267.

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M.Tech. (Chemistry, Faculty of Applied and Computer Science), Vaal University of Technology.<br>Complexes of alkyldithiocarbamate and thiuram have been extensively explored for various applications in the medical field. Thiuram and dithiocarbamate ligands were used to prepared complexes of cobalt and copper. The high abundance of sulfur in these ligands has resulted to be the preferred complexes for the synthesis of metal sulfide nanoparticles. All the prepared complexes were characterized using techniques such as IR and 1HNMR spectroscopy, elemental analysis, and thermogravimetric analysis. A

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Hou, Hong Chang, and 侯宏昌. "Chemistry of (B-diketonate)(7-substituted-norbornadiene) copper(I) compounds and their application as chemical vapor deposition precursors." Thesis, 1994. http://ndltd.ncl.edu.tw/handle/85625712322828976442.

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Chen, Yi-Shou, and 陳宜秀. "Chemical Vapor Deposition of Graphene on Copper with Methanol Precursor." Thesis, 2014. http://ndltd.ncl.edu.tw/handle/64y322.

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碩士<br>國立高雄應用科技大學<br>化學工程與材料工程系博碩士班<br>102<br>In this study, the chemical vapor deposition was used to synthesize graphene. The methanol was used as carbon precursor. Either a copper foil or a copper thin film was chosed as a catalyst substrate. The parameters such as pre-treatment gas flow, the H2 flow rate, growth temperature, growth time, or the effect of pretreatment copper were systematical investigated. The Xray diffraction, optical microscope and scanning electronic microscope were used to examine the structure of the copper substrate and the formation of graphene. The guality and the th

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Huang, Ing-Jye, and 黃英傑. "The Reaction Mechanism Study of Ligand of Copper Precursor Adsorption on Si(100)." Thesis, 2001. http://ndltd.ncl.edu.tw/handle/10565254827387372695.

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碩士<br>國立臺灣大學<br>化學研究所<br>89<br>Adsorption and decomposition of tert-butylacetoacetate(tBAA) on Si(100) have been investigated using static secondary ion mass spectrometry (SSIMS) and temperature-programmed desorption(TPD). At low exposure(＜4.2L), all tBAA molecules dissociate readily upon adsorption on the surface at temperature as low as-170oC. but, we found that tBAA may adsorb molecularly on Si(100) at exposures of more than 4.2L, as indicated by could prove the m/e 158 singal appears as the highest mass in the SIMS spectrum at an exposure of 4.2L. So a tBAA exposure of 4.0L will thus be ar

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Tseng, Chih-Yuan, and 曾志遠. "Two-Step Growth of MOCVD Copper Using Cu(hfac)2 as the Precursor." Thesis, 2002. http://ndltd.ncl.edu.tw/handle/67277989140551696758.

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碩士<br>國立臺灣科技大學<br>化學工程系<br>90<br>The purpose of this paper is to investigate the two-step growth of MOCVD copper using Cu(hfac)2 as the precursor. In the first step, we pre-deposit Cu2O films with water as the additive because precursor’s partial pressure is unstable during deposition without water additive. In contrast to H2, H atoms which are produced due to dehydrogenation reaction of ethanol alcohol can be used to reduce Cu2O films at lower temperatures and enhance the reaction rate .The Cu atom in Cu2O films(24％) is the catalyst. The mixture of ethanol alcohol and water can be

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Kasman. "The growth of graphene/graphite thin film allotropes on copper substrates." Thesis, 2014. http://hdl.handle.net/1959.13/1047598.

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Research Doctorate - Doctor of Philosophy (PhD)<br>Graphene, a monolayer of graphite, has drawn a great deal of attention for organic electronic applications. Excellent optical transmittance combined with its extraordinary electrical properties makes it an attractive material for using as a transparent, conductive electrode in the fabrication of organic solar cells (OSCs). To bring graphene to mass production, synthesis methods are required for its growth as a large-area film. Chemical vapour deposition (CVD) is a novel technique proposed to produce high quality, large-area graphene films. Rec

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Chen, Gene, and 陳昭慶. "A Study on the MOCVD Copper Films using (hfac)CuI(COD) as the Precursor." Thesis, 2009. http://ndltd.ncl.edu.tw/handle/27326631557598785316.

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博士<br>國立臺灣科技大學<br>化學工程系<br>97<br>The feasibility of using a metal-organic chemical vapor deposition (MOCVD) technique with hexafluoroacetylacetonate-copper(I)- cycloocta-1,5-diene (hfac)CuI(COD) as a precursor to achieve the deposition of a thin and conformal copper film was examined. Self-synthesis of [(hfac)CuI(COD)] and characterization with H1-Nuclear Magnetic Resonance Spectrometer (H1-NMR) and Fourier-Transform Infrared Absorption Spectrophotometer (FTIR)、differential scanning calorimetry (DSC) where performed and (hfac)CuI(COD) was confirmed to be the product. The kinetics of disproport

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Kuo, Wei-Hsuan, and 郭瑋軒. "The Synthesis of MOCVD Precursor CuII(OCHMeCH2NEt2)2 and Growth of Copper Thin Films." Thesis, 2006. http://ndltd.ncl.edu.tw/handle/b44e9r.

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碩士<br>國立臺灣科技大學<br>化學工程系<br>94<br>The volatile copper(II) complex CuII(OCHMeCH2NEt2)2 was synthesized. By the use of this CuII(OCHMeCH2NEt2)2 as a MOCVD precursor, highly conductive, conformal, continuous, nonporous, and pure copper thin films were deposited at various deposition temperatures and deposition times in this study. The successful synthesis and purity of volatile copper(II) complex CuII(OCHMeCH2NEt2)2 were characterized by FTIR. The thermal stability and decomposition temperature found by TGA made the compound a great precursor for Cu CVD. A highly conductive, conformal, continuous,

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Lee, Ming-da, and 李明達. "The Synthesis of MOCVD Precursor CuII(OCHMeCH2NEt2)2 and Study on Material Properties of Copper Films." Thesis, 2007. http://ndltd.ncl.edu.tw/handle/c65vw6.

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碩士<br>國立臺灣科技大學<br>化學工程系<br>95<br>The volatile copper(II) complex CuII(OCHMeCH2NEt2)2 was synthesized. By the use of this CuII(OCHMeCH2NEt2)2 as a MOCVD precursor, highly conductive, conformal, continuous, nonporous, and pure copper thin films were deposited with various deposition temperatures and deposition times. In addition, the kinetic data of MOCVD Cu thin films as a function of deposition temperature and precursor partial pressure were investigated in this study. According to experimental results, a copper thin film obtained at 210℃ and a deposition time of 6 minutes had the lowest resis

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Chang, Sung Chi, and 張松吉. "The Synthesis of MOCVD Precursor (hfac)Cu(COD) and the Initial Growth of Copper Thin Films." Thesis, 2001. http://ndltd.ncl.edu.tw/handle/81018319076126449527.

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碩士<br>國立臺灣科技大學<br>化學工程系<br>89<br>The volatile copper(I) complex (β-diketonate)CuI(COD) whereβ-diketonate = hexafluoroacetylacetonate(hfac), and COD = 1, 5-clcyooctandine has been successfully prepared in high yield. This species has been characterized by H1-NMR and FTIR to ensure its high purity. The thermal stability found by DSC and TGA makes the compound a great precursor for Cu CVD. A highly conductive copper film can be deposited conformally, continuously, nonporously, and purely by the disproportionation reaction of (hfac)CuI(COD) at proper deposition temperature, precursor pa

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Wu, Bo-Yu, and 吳柏諭. "Kinetics study and material analysis of metalorganic chemical vapor deposition copper films-Precursor: (hfac)CuI(COD)." Thesis, 2006. http://ndltd.ncl.edu.tw/handle/ygbv29.

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碩士<br>國立臺灣科技大學<br>化學工程系<br>94<br>Growth kinetics and material analysis of copper films with metalorganic chemical vapor deposition (MOCVD) reaction system using hexafluoroacetonate-Cu(I)-1,5-cyclooctadiene (hfac)CuI(COD) as the precursor was studied. In this study, the kinetic data of MOCVD Cu thin films as a function of deposition temperature and partial pressure of precursor were investigated. In addition, the effect of different deposition temperatures on the surface morphology、crystal structure、microstructure and film electricity was discussed. It was found that the growth rate of copper

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Chou, Wei-Chi, and 周偉吉. "The Initial and Two-Step Growth of MOCVD Copper Using (hfac)Cu(COD) as the Precursor." Thesis, 2002. http://ndltd.ncl.edu.tw/handle/09964445462519256275.

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碩士<br>國立臺灣科技大學<br>化學工程系<br>90<br>Copper films were directly deposited on TaN surface by MOCVD。A highly conductive and pure copper film can be deposited conformally、continuously、and nonporously at 190℃for 9 min。 Instead SEM，the porousity and continuity of copper films can be determined by sheet resistance and reflectivity measurements，which provide noble methodologies for the end-point detection of seed layer deposition。 During the nucleation stage of copper films，the formation of more copper nuclei can produce copper films with smaller grains。Thus，we investigated the two-

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Kang, Ting-wei, and 康庭瑋. "Fabrication of Thin Film CIGS Solar Cells from Aqueous Slurry Based on Copper Indium Gallium Selenite Precursor." Thesis, 2010. http://ndltd.ncl.edu.tw/handle/54172330224339784308.

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碩士<br>國立臺灣科技大學<br>化學工程系<br>98<br>We try to develop a process to fabrication of thin film CIGS solar cells from aqueous slurry based on copper indium gallium selenite (CIGSO) precursor. The study consists of four major parts. The first part is to synthesize the CIGSO precursor with amorphous structure in large quantity use microwave-assisted hydrothermal route. Through a bigger reactor, we increased the production efficiently by adjusting the output power, reaction time and temperature. The developed method is considered to be a high potential for further applications. The issues associated wit

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Chih-Fang, Tsai, and 蔡智帆. "The Synthesis of MOCVD Precursor Cu(hfac)2 and the Two-Step Growth of Copper Thin Films." Thesis, 2001. http://ndltd.ncl.edu.tw/handle/95810016199271440469.

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碩士<br>國立臺灣科技大學<br>化學工程系<br>89<br>The purpose of this paper was to investigate the use of Copper(II) hexaflouroacetatc；Cu(hfac)2 as a precursor to deposit copper films. Synthesis of Cu(hfac)2 and characterization with 1H-MNR、FTIR、DSC、TGA where performed and Cu(hfac)2 was confirmed to be the product. To deposit highly dense、continuous and reflective pure copper films a two-step growth method is performed. First, we predeposit dense and continuous Cu2O films on TaN substrate at 300℃. After that Cu2O is reduced to pure Cu by annealing in H2 ambient at low temperature (＜400℃).We also use

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Hosseini, Layla. "Synthesis of mesoporous silica particles using an asymmetric precursor: application to heavy metal removal." Thesis, 2020. http://hdl.handle.net/1959.13/1419587.

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Research Doctorate - Doctor of Philosophy (PhD)<br>Porous materials have a significant role in a number of different aspects of technology and science because many biological and industrial processes can occur in the confined geometry of their pores. Amongst these type of materials, the porous silica nanoparticles, in which silica is the main building block, are of considerable interest as silica itself is chemically inert, thermally stable, harmless and inexpensive. Altering the conditions of the synthesis results in changes in the product’s properties, and therefore its potential application

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Chan, Yao-Chung, and 詹耀中. "The Development of Copper Indium Gallium Diselenide Thin Film Solar Cell Absorber Fabricated by Alloy Precursor Stacked Layers Selenization Process." Thesis, 2007. http://ndltd.ncl.edu.tw/handle/43115310746917912408.

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碩士<br>逢甲大學<br>材料科學所<br>95<br>The research uses alloy target for innovative process which can simplify the process control. It combines sputtering CIG thin film precursor layer and evaporation selenium layer, and deposit CIGS solar cell thin film absorber on Mo back contact layer. Sputtering CIG precursor layer in room and high temperature are Cu7In3 and Cu16In9 structures with gallium substituent. As temperature rises up, a relatively In-rich Cu11In9 phase will be in appearance. The analysis of SEM surface morphology figures that these In-rich and Cu-rich phases present obviously different gra

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