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Dissertations / Theses on the topic 'Copper Ruthenium Oxides'

Author: Grafiati

Published: 4 June 2021

Last updated: 7 February 2022

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1

Venkataraman, Shyam S. "Electrodeposition of Copper on Ruthenium Oxides and Bimetallic Corrosion of Copper/Ruthenium in Polyphenolic Antioxidants." Thesis, University of North Texas, 2007. https://digital.library.unt.edu/ark:/67531/metadc3908/.

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Copper (Cu) electrodeposition on ruthenium (Ru) oxides was studied due to important implications in semiconductor industry. Ruthenium, proposed as the copper diffusion barrier/liner material, has higher oxygen affinity to form different oxides. Three different oxides (the native oxide, reversible oxide, and irreversible oxide) were studied. Native oxide can be formed on exposing Ru in atmosphere. The reversible and irreversible oxides can be formed by applying electrochemical potential. Investigation of Cu under potential deposition on these oxides indicates the similarity between native and r

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2

Venkataraman, Shyam S. Chyan Oliver Ming-Ren. "Electrodeposition of copper on ruthenium oxides and bimetallic corrosion of copper/ruthenium in polyphenolic antioxidants." [Denton, Tex.] : University of North Texas, 2007. http://digital.library.unt.edu/permalink/meta-dc-3908.

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3

Yu, Kyle K. Chyan Oliver Ming-Ren. "Study of copper electrodeposition on ruthenium oxide surfaces and bimetallic corrosion of copper/ruthenium in gallic acid solution." [Denton, Tex.] : University of North Texas, 2007. http://digital.library.unt.edu/permalink/meta-dc-3897.

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4

Yu, Kyle K. "Study of Copper Electrodeposition on Ruthenium Oxide Surfaces and Bimetallic Corrosion of Copper/Ruthenium in Gallic Acid Solution." Thesis, University of North Texas, 2007. https://digital.library.unt.edu/ark:/67531/metadc3897/.

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Ruthenium, proposed as a new candidate of diffusion barrier, has three different kinds of oxides, which are native oxide, electrochemical reversible oxide and electrochemical irreversible oxide. Native oxide was formed by naturally exposed to air. Electrochemical reversible oxide was formed at lower anodic potential region, and irreversible oxides were formed at higher anodic potential region. In this study, we were focusing on the effect of copper electrodeposition on each type of oxides. From decreased charge of anodic stripping peaks and underpotential deposition (UPD) waves in cyclic volta

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5

Wang, Chang-Sheng. "Selective catalytic C(sp²)–H and C(sp³)–H bond functionalizations for the synthesis of phosphorus and nitrogen containing molecules." Thesis, Rennes 1, 2018. http://www.theses.fr/2018REN1S106/document.

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Dans la thèse de doctorat, nous avons développé une approche efficace pour la modification rapide d'oxydes d'arylphosphines via la fonctionnalisation de liaisons C-H en position ortho du groupement P=O catalysée par le ruthénium (II) en présence des alcènes. Intéressement, l'ajustement du pH du milieu réactionnel permet de contrôler la sélectivité de la réaction à savoir alkylation or oléfination. La réduction des oxydes de phosphines fonctionnalisées permet la formation d'arylphosphines portant un carboxylate flexible. Dans le second objectif, un couplage C(sp3)–H /N-H oxydatif catalysé par l

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6

Huang, Long. "Copper Electrodeposition on Iridium, Ruthenium and Its Conductive Oxide Substrate." Thesis, University of North Texas, 2003. https://digital.library.unt.edu/ark:/67531/metadc4416/.

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The aim of this thesis was to investigate the physical and electrochemical properties of sub monolayer and monolayer of copper deposition on the polycrystalline iridium, ruthenium and its conductive oxide. The electrochemical methods cyclic voltammetry (CV) and chronocoulometry were used to study the under potential deposition. The electrochemical methods to oxidize the ruthenium metal are presented, and the electrochemical properties of the oxide ruthenium are studied. The full range of CV is presented in this thesis, and the distances between the stripping bulk peak and stripping UPD p

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7

Zhang, Yibin. "Study of Ruthenium and Ruthenium Oxide's Electrochemical Properties and Application as a Copper Diffusion Barrier." Thesis, University of North Texas, 2005. https://digital.library.unt.edu/ark:/67531/metadc4825/.

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As a very promising material of copper diffusion barrier for next generation microelectronics, Ru has already obtained a considerable attention recently. In this dissertation, we investigated ruthenium and ruthenium oxide electrochemical properties and the application as a copper diffusion barrier. Cu under potential deposition (UPD) on the RuOx formed electrochemically was first observed. Strong binding interaction, manifesting by the observed Cu UPD process, exists between Cu and Ru as well as its conductive ruthenium oxide. Since UPD can be conformally formed on the electrode surface, whic

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8

Dhakal, Dileep. "Growth Monitoring of Ultrathin Copper and Copper Oxide Films Deposited by Atomic Layer Deposition." Doctoral thesis, Universitätsbibliothek Chemnitz, 2017. http://nbn-resolving.de/urn:nbn:de:bsz:ch1-qucosa-229808.

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Atomic layer deposition (ALD) of copper films is getting enormous interest. Ultrathin Cu films are applied as the seed layer for electrochemical deposition (ECD) of copper in interconnect circuits and as the non-magnetic material for the realization of giant magnetoresistance (GMR) sensors. Particularly, Co/Cu multi-layered structures require sub 4.0 nm copper film thickness for obtaining strong GMR effects. The physical vapor deposition process for the deposition of the copper seed layers are prone to non-conformal coating and poor step coverage on side-walls and bottoms of trenches and vias,

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9

Kurnaz, Emine. "Epoxidation Reactions Of Small Alkenes On Catalytic Surfaces." Master's thesis, METU, 2011. http://etd.lib.metu.edu.tr/upload/12613918/index.pdf.

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Propylene epoxidation reaction was investigated on catalytic surfaces of chlorinated copper(I) oxide and ruthenium(IV) oxide using periodic density functional theory (DFT). Cu2O(001) and (110) surface of RuO2 was selected to generate chlorinated surfaces to be used in the study. Besides epoxidation, other reactions that compete with epoxidation were also studied such as formations of allyl-radical, acrolein, acetone on chlorinated Cu2O(001) and formations of propionaldehyde, allyl-radical and acetone on chlorinated RuO2(110) surface. Path of each reaction was determined by CI-NEB method and tr

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10

Waechtler, Thomas, Steffen Oswald, Nina Roth, Heinrich Lang, Stefan E. Schulz, and Thomas Gessner. "ALD of Copper and Copper Oxide Thin Films For Applications in Metallization Systems of ULSI Devices." Universitätsbibliothek Chemnitz, 2008. http://nbn-resolving.de/urn:nbn:de:bsz:ch1-200800914.

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<p> As a possible alternative for growing seed layers required for electrochemical Cu deposition of metallization systems in ULSI circuits, the atomic layer deposition (ALD) of Cu is under consideration. To avoid drawbacks related to plasma-enhanced ALD (PEALD), thermal growth of Cu has been proposed by two-step processes forming copper oxide films by ALD which are subsequently reduced. </p> <p> This talk, given at the 8th International Conference on Atomic Layer Deposition (ALD 2008), held in Bruges, Belgium from 29 June to 2 July 2008, summarizes the results of thermal ALD experi

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11

Waechtler, Thomas, Steffen Schulze, Lutz Hofmann, et al. "Detailed Study of Copper Oxide ALD on SiO2, TaN, and Ru." Universitätsbibliothek Chemnitz, 2009. http://nbn-resolving.de/urn:nbn:de:bsz:ch1-200901295.

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Copper films with a thickness in the nanometer range are required as seed layers for the electrochemical Cu deposition to form multilevel interconnects in ultralarge-scale integrated (ULSI) electronic devices. Continuously shrinking device dimensions and increasing aspect ratios of the dual-damascene structures in the copper-based metallization schemes put ever more stringent requirements on the films with respect to their conformality in nanostructures and thickness homogeneity across large wafers. Due to its intrinsic self-limiting film growth characteristic, atomic layer deposition (ALD) a

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12

Wächtler, Thomas. "Thin Films of Copper Oxide and Copper Grown by Atomic Layer Deposition for Applications in Metallization Systems of Microelectronic Devices." Doctoral thesis, Universitätsbibliothek Chemnitz, 2010. http://nbn-resolving.de/urn:nbn:de:bsz:ch1-201000725.

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Copper-based multi-level metallization systems in today’s ultralarge-scale integrated electronic circuits require the fabrication of diffusion barriers and conductive seed layers for the electrochemical metal deposition. Such films of only several nanometers in thickness have to be deposited void-free and conformal in patterned dielectrics. The envisaged further reduction of the geometric dimensions of the interconnect system calls for coating techniques that circumvent the drawbacks of the well-established physical vapor deposition. The atomic layer deposition method (ALD) allows depositing f

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13

Waechtler, Thomas, Shao-Feng Ding, Lutz Hofmann, et al. "ALD-grown seed layers for electrochemical copper deposition integrated with different diffusion barrier systems." Universitätsbibliothek Chemnitz, 2011. http://nbn-resolving.de/urn:nbn:de:bsz:ch1-qucosa-68040.

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The deposition of Cu seed layers for electrochemical Cu deposition (ECD) via atomic layer deposition (ALD) of copper oxide and subsequent thermal reduction at temperatures between 110 and 120°C was studied on different diffusion barrier systems. While optimization of the process is required on TaN with respect to reduction and plating, promising results were obtained on blanket PVD Ru. The plating results on layers of ALD Cu with underlying Ru even outperformed the ones achieved on PVD Cu seed layers with respect to morphology and resistivity. Applying the processes to via and line patterns ga

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14

Wächtler, Thomas. "Thin Films of Copper Oxide and Copper Grown by Atomic Layer Deposition for Applications in Metallization Systems of Microelectronic Devices." Doctoral thesis, Universitätsverlag der Technischen Universität Chemnitz, 2009. https://monarch.qucosa.de/id/qucosa%3A19323.

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Copper-based multi-level metallization systems in today’s ultralarge-scale integrated electronic circuits require the fabrication of diffusion barriers and conductive seed layers for the electrochemical metal deposition. Such films of only several nanometers in thickness have to be deposited void-free and conformal in patterned dielectrics. The envisaged further reduction of the geometric dimensions of the interconnect system calls for coating techniques that circumvent the drawbacks of the well-established physical vapor deposition. The atomic layer deposition method (ALD) allows depositing

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15

Waechtler, Thomas, Steffen Oswald, Nina Roth, et al. "Copper Oxide Films Grown by Atomic Layer Deposition from Bis(tri-n-butylphosphane)copper(I)acetylacetonate on Ta, TaN, Ru, and SiO2." Universitätsbibliothek Chemnitz, 2009. http://nbn-resolving.de/urn:nbn:de:bsz:ch1-200900734.

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The thermal atomic layer deposition (ALD) of copper oxide films from the non-fluorinated yet liquid precursor bis(tri-n-butylphosphane)copper(I)acetylacetonate, [(<sup>n</sup>Bu<sub>3</sub>P)<sub>2</sub>Cu(acac)], and wet O<sub>2</sub> on Ta, TaN, Ru and SiO<sub>2</sub> substrates at temperatures of < 160°C is reported. Typical temperature-independent growth was observed at least up to 125°C with a growth-per-cycle of ~ 0.1 Å for the metallic substrates and an ALD window extending down to 100°C for Ru. On SiO<sub>2</sub> and TaN the ALD window was observed between 110 and

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16

Mueller, Steve, Thomas Waechtler, Lutz Hofmann, et al. "Thermal ALD of Cu via Reduction of CuxO films for the Advanced Metallization in Spintronic and ULSI Interconnect Systems." Universitätsbibliothek Chemnitz, 2012. http://nbn-resolving.de/urn:nbn:de:bsz:ch1-qucosa-84003.

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In this work, an approach for copper atomic layer deposition (ALD) via reduction of CuxO films was investigated regarding applications in ULSI interconnects, like Cu seed layers directly grown on diffusion barriers (e. g. TaN) or possible liner materials (e. g. Ru or Ni) as well as non-ferromagnetic spacer layers between ferromagnetic films in GMR sensor elements, like Ni or Co. The thermal CuxO ALD process is based on the Cu (I) β-diketonate precursor [(nBu3P)2Cu(acac)] and a mixture of water vapor and oxygen ("wet O2") as co-reactant at temperatures between 100 and 130 °C. Highly efficient c

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17

Mueller, Steve, Thomas Waechtler, Lutz Hofmann, et al. "Thermal ALD of Cu via Reduction of CuxO films for the Advanced Metallization in Spintronic and ULSI Interconnect Systems." Technische Universität Chemnitz, 2011. https://monarch.qucosa.de/id/qucosa%3A19675.

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In this work, an approach for copper atomic layer deposition (ALD) via reduction of CuxO films was investigated regarding applications in ULSI interconnects, like Cu seed layers directly grown on diffusion barriers (e. g. TaN) or possible liner materials (e. g. Ru or Ni) as well as non-ferromagnetic spacer layers between ferromagnetic films in GMR sensor elements, like Ni or Co. The thermal CuxO ALD process is based on the Cu (I) β-diketonate precursor [(nBu3P)2Cu(acac)] and a mixture of water vapor and oxygen ("wet O2") as co-reactant at temperatures between 100 and 130 °C. Highly efficient c

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18

JULISTIAN, ADE, and 艾思天. "HYDROTHERMAL SYNTHESIS OF COPPER/RUTHENIUM OXIDES AND MULTI-WALLED CARBON NANOTUBE NANOCOMPOSITES FOR SUPERIOR HYBRID CAPACITOR ELECTRODES." Thesis, 2018. http://ndltd.ncl.edu.tw/handle/ycs92m.

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碩士<br>國立勤益科技大學<br>化工與材料工程系<br>106<br>As for the increasing demands of environmentally friendly and fast charge/discharge energy storage device, supercapacitor (SC) technologies have been attracting increasing research interests. Among all the supercapacitor technologies, hybrid capacitor gives the most possibility for high power and high energy densities. Hybrid capacitor electrode can be made by a combination of metal oxides and carbon materials. The aim of hybrid combination is to build a supercapacitor with high specific capacitance, power density, energy density, and long cycle life. In t

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19

Dhakal, Dileep. "Growth Monitoring of Ultrathin Copper and Copper Oxide Films Deposited by Atomic Layer Deposition." Doctoral thesis, 2016. https://monarch.qucosa.de/id/qucosa%3A19801.

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Atomic layer deposition (ALD) of copper films is getting enormous interest. Ultrathin Cu films are applied as the seed layer for electrochemical deposition (ECD) of copper in interconnect circuits and as the non-magnetic material for the realization of giant magnetoresistance (GMR) sensors. Particularly, Co/Cu multi-layered structures require sub 4.0 nm copper film thickness for obtaining strong GMR effects. The physical vapor deposition process for the deposition of the copper seed layers are prone to non-conformal coating and poor step coverage on side-walls and bottoms of trenches and vias,

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20

Li, Sheh-Hung, and 李世鴻. "The Characterization and Electrocatalytic Properties of Mixed-valent Osmium Oxide /Hexachloroplantinate / Platinum Film and Ruthenium Oxide / Hexachloroiridate / Platinum Film and Copper Hexacyanoferrate / Platinum Film Modified Electrodes." Thesis, 2006. http://ndltd.ncl.edu.tw/handle/9es38y.

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碩士<br>國立臺北科技大學<br>化學工程所<br>94<br>Osmium oxide/hexachloroplatinate (OsPtCl6), osmium oxide and platinum mixed films have been prepared using repetitive cyclic voltammetry. The deposition process and the films'' electrocatalytic properties have been investigated. The cyclic voltammograms recorded the deposition of the mixed osmium hexachloroplatinate (OsPtCl6), osmium oxide and platinum films directly from the mixing of Os3+ and PtCl62– ions from the acidic aqueous solutions. The electrochemical quartz crystal microbalance, cyclic voltammetry, and SEM were used to study the growth mechanism of t

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