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Dissertations / Theses on the topic 'Copper vapour'

Author: Grafiati

Published: 4 June 2021

Last updated: 5 February 2022

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1

Lewis, R. R. "Mechanisms of copper vapour lasers." Thesis, University of Oxford, 1985. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.233563.

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2

Marshall, Graham David. "Kinetically enhanced copper vapour lasers." Thesis, University of Oxford, 2002. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.270222.

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3

Wadsworth, W. J. "Copper vapour laser pumped TI:sapphire lasers." Thesis, University of Oxford, 1997. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.389029.

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4

Kapitan, Daniel. "Laser ablation with copper vapour lasers." Thesis, University of Oxford, 1999. https://ora.ox.ac.uk/objects/uuid:a1dc1a3b-602a-4ebb-abe2-734e8e11f15a.

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The use of copper vapour lasers for laser ablation in laser materials processing applications is studied. To this purpose, the generation of near diffraction-limited beam quality output from a single medium-scale oscillator is demonstrated via matching the total buffer gas pressure to the specific electrical input power loading and the degree of insulation of the plasma tube. The design and characterisation of a Master-Oscillator Power-Amplifier system based on a smallbore oscillator is also described, focusing on pulse stretching techniques to provide efficient seeding required for producing

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5

Clark, Graeme Lawrence. "Studies of copper and gold vapour lasers." Thesis, University of St Andrews, 1988. http://hdl.handle.net/10023/13803.

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The work described in this thesis covers various aspects of pulsed copper and gold vapour lasers. The work is divided into four main parts : a computer model of the kinetics of the copper vapour laser discharge; construction and characterization of a copper vapour laser and a gold vapour laser system (to be used for photodynamic cancer treatment); analysis of the thermal processes occurring in the various forms of thermal insulation used in these lasers; and studies of the use of metal walls to confine a discharge plasma. The results of this work were combined in the design of the first copper

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6

Hogan, Geoff P. "A study of the kinetics of copper vapour lasers." Thesis, University of Oxford, 1993. https://ora.ox.ac.uk/objects/uuid:174eb6ce-3576-49c1-add4-5e1b0d2e1571.

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A 42 mm bore, 40 W copper vapour laser (CVL) has been set up in a test rig in order to measure the values of many of the parameters of the laser as a function of time in the laser pulse-delay cycle, and of radial position in the plasma tube, while at all times running under standard operating conditions. In this way it has been possible to obtain the world's first truly comprehensive parameter map of the CVL in which all of the measurements have been performed upon the same device, operating under identical conditions and with all times accurately referenced to a datum. It is intended that thi

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7

Fallberg, Anna. "Chemical Vapour Deposition of Undoped and Oxygen Doped Copper (I) Nitride." Doctoral thesis, Uppsala universitet, Institutionen för materialkemi, 2010. http://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-110533.

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In science and technology there is a steadily increased demand of new materials and new materials production processes since they create new application areas as well as improved production technology and economy. This thesis includes development and studies of a chemical vapour deposition (CVD) process for growth of thin films of the metastable material copper nitride, Cu3N, which is a semiconductor and decomposes at around 300 oC. The combination of these properties opens for a variety of applications ranging from solar cells to sensor and information technology. The CVD process developed is

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8

Lewis, Amanda. "Fundamental studies of the chemical vapour deposition of graphene on copper." Thesis, University of Manchester, 2014. https://www.research.manchester.ac.uk/portal/en/theses/fundamental-studies-of-the-chemical-vapour-deposition-of-graphene-on-copper(f85feb54-5994-4201-b400-c622f4d7b216).html.

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The chemical vapour deposition (CVD) of graphene is the most promising route for production of large-area graphene films. However there are still major challenges faced by the field, including control of the graphene coverage, quality, and the number of layers. These challenges can be overcome by developing a fundamental understanding of the graphene growth process. This thesis contributes to the growing body of work on graphene CVD by uniquely exploring the gas phase chemistry and fluid flow in the hot-wall graphene CVD reactor. Firstly the reported parameter space for the hot-wall CVD of gra

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9

Boreland, Matt School of Electrical Engineering UNSW. "Laser Crystallisation of Silicon for Photovoltaic Applications using Copper Vapour Lasers." Awarded by:University of New South Wales. School of Electrical Engineering, 1999. http://handle.unsw.edu.au/1959.4/17190.

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Thin film silicon on low temperature glass substrates is currently seen as the best path toreduce the $/W cost of photovoltaic (PV) modules. However, producing thin film polysilicon, on glass, is an ongoing research challenge. Laser crystallisation of a-Si is one of the possible methods. Typically excimer (XMR) lasers are used for laser crystallisation. This thesis introduces the copper vapour laser (CVL) as a viable alternative for thin film photovoltaic applications. The CVL, like the XMR, is a high powered, pulsed laser. However, the CVL has higher pulse rates (4-20kHz), better beam qualit

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10

Boreland, Matt. "Laser crystallisation of silicon for photovoltaic applications using copper vapour lasers." [Sydney : University of New South Wales], 1999. http://www.library.unsw.edu.au/~thesis/adt-NUN/public/adt-NUN1999.0055/index.html.

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11

Knowles, Martyn R. H. "Solid state devices for frequency conversion of Copper Vapour Laser radiation." Thesis, University of Oxford, 1994. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.240635.

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12

Rosenberg, Chico L. "Novel precursors for chemical vapour deposition of the metals copper, nickel and cobalt." Thesis, Imperial College London, 2003. http://hdl.handle.net/10044/1/11893.

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13

McGonigle, A. J. S. "Tunable UV lasers." Thesis, University of Oxford, 2000. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.343230.

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14

Perkins, Neil. "Reactivity of Pd single crystal, alloy and model catalyst surfaces." Thesis, University of Reading, 2001. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.369758.

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15

Cox, Jennifer Jane. "Structure of organic molecular thin films vapour deposited on III-V semiconductor surfaces." Thesis, Imperial College London, 1999. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.327025.

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16

Nuesca, Guillermo M. "Surface and Interfacial Studies of Metal-Organic Chemical Vapor Deposition of Copper." Thesis, University of North Texas, 1997. https://digital.library.unt.edu/ark:/67531/metadc278058/.

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The nucleation and successful growth of copper (Cu) thin films on diffusion barrier/adhesion promoter substrates during metal-organic chemical vapor deposition (MOCVD) are strongly dependent on the initial Cu precursor-substrate chemistry and surface conditions such as organic contamination and oxidation. This research focuses on the interactions of bis(1,1,1,5,5,5-hexafluoroacetylacetonato)copper(II), [Cu(hfac)2], with polycrystalline tantalum (Ta) and polycrystalline as well as epitaxial titanium nitride (TiN) substrates during Cu MOCVD, under ultra-high vacuum (UHV) conditions and low subst

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17

Procházka, Pavel. "Příprava grafenu metodou CVD." Master's thesis, Vysoké učení technické v Brně. Fakulta strojního inženýrství, 2012. http://www.nusl.cz/ntk/nusl-230205.

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This diploma thesis is mainly focused on the fabrication of graphene layers on the copper foil by the Chemical Vapor Deposition (CVD). For this purpose the high-temperature chamber for the production of the graphene was completed and fully automated. The production of the high area graphene on the copper foil was experimentally achieved. The Raman microscopy and X-ray photoelectron spectroscopy measurements proved that the produced graphene is mostly a monolayer. Graphene layer was transferred on non-conductive substrate.

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18

Welton, Theresa E. (Theresa Eilene). "The Metal-Organic Chemical Vapor Deposition of Cu(II)-bishexafluoroacetylacetonate on a Tungsten Substrate." Thesis, University of North Texas, 1992. https://digital.library.unt.edu/ark:/67531/metadc500726/.

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Evidence is reported for the formation of carbon-containing contamination products at the copper-tungsten (Cu-W) interface during the metal organic chemical vapor deposition (MOCVD) of copper on tungsten. Cu(II)bishexafluoroacetylacetonate [Cu(hfac)_2] was physisorbed onto lightly oxidized tungsten (WO_x) at 115K, under ultra-high vacuum conditions, and then annealed sequentially to higher temperatures. Copper reduction was observed by 320K. Carbonaceous and carbidic contamination of the WO_x surface was observed, even after sample warming to 625K in UHV. The results indicate that low temperat

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19

Smith, Thomas. "Studies of p-type semiconductor photoelectrodes for tandem solar cells." Thesis, Loughborough University, 2014. https://dspace.lboro.ac.uk/2134/14522.

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Photoelectrodes and photovoltaic devices have been prepared via multiple thin film deposition methods. Aerosol assisted chemical vapour deposition (AACVD), electrodeposition (ED), chemical bath deposition (CBD) and doctor blade technique (DB) have been used to deposit binary and ternary metal oxide films on FTO glass substrates. The prepared thin films were characterised by a combination of SEM (Scanning Electron Microscopy), powder X-ray diffraction, mechanical strength tests and photochemical measurements. Nickel oxide (NiO) thin films prepared by AACVD were determined to have good mechanica

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20

Krishnan, Vidya. "Electroless deposition of copper for microelectronic applications." Thesis, Georgia Institute of Technology, 2000. http://hdl.handle.net/1853/11752.

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21

Stephens, Alan Thomas. "Chemical vapor deposition reactor design and process optimization for the deposition of copper thin films /." Online version of thesis, 1994. http://hdl.handle.net/1850/11578.

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22

Grant, Ann W. "Surface studies of model catalysts using metal atoms and particles on ZnO(0001)-Zn and -O and TiO₂(110) /." Thesis, Connect to this title online; UW restricted, 2001. http://hdl.handle.net/1773/8499.

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23

Young, Valerie Lynne Vandigrifft. "The chemistry of metalorganic chemical vapor deposition from a copper alkoxide precursor." Diss., This resource online, 1992. http://scholar.lib.vt.edu/theses/available/etd-06062008-170227/.

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24

Mohsin, Ali. "Graphene synthesis and characterization on copper." Thesis, University of Iowa, 2012. https://ir.uiowa.edu/etd/3354.

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Graphene, two dimensional sheet of carbon atoms has recently gained attention as some of its properties are promising for electronics applications e.g. higher mobility that translates to higher operating frequency for devices geared towards radio frequency applications. Excellent optical transmittance combined with its semi metallic behavior makes it an important material for transparent contacts in solar cells. To bring graphene to the production level, synthesis methods are needed for its growth on wafer scale. It has been shown that chemical vapor deposition (CVD) is one of the techniques t

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25

Chiang, Tony Ping-chen. "Surface kinetic study of ion induced chemical vapor deposition of copper." Thesis, Massachusetts Institute of Technology, 1996. http://hdl.handle.net/1721.1/9869.

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Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Materials Science and Engineering, 1996.<br>Includes bibliographical references (leaves 158-162).<br>by Tony Ping-chen Chiang.<br>Ph.D.

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26

Sutcliffe, Ronald David. "Aluminum and Copper Chemical Vapor Deposition on Fluoropolymer Dielectrics and Subsequent Interfacial Interactions." Thesis, University of North Texas, 1997. https://digital.library.unt.edu/ark:/67531/metadc279304/.

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27

Au, Yeung Billy. "Chemical Vapor Deposition of Thin Film Materials for Copper Interconnects in Microelectronics." Thesis, Harvard University, 2012. http://dissertations.umi.com/gsas.harvard:10227.

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The packing density of microelectronic devices has increased exponentially over the past four decades. Continuous enhancements in device performance and functionality have been achieved by the introduction of new materials and fabrication techniques. This thesis summarizes the thin film materials and metallization processes by chemical vapor deposition (CVD) developed during my graduate study with Professor Gordon at Harvard University. These materials and processes have the potential to build future generations of microelectronic devices with higher speeds and longer lifetimes. Manganese Sili

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28

Fang, Wenjing Ph D. Massachusetts Institute of Technology. "Bilayer graphene growth by low pressure chemical vapor deposition on copper foil." Thesis, Massachusetts Institute of Technology, 2012. http://hdl.handle.net/1721.1/75656.

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Thesis (S.M.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2012.<br>Cataloged from PDF version of thesis.<br>Includes bibliographical references (p. 49-51).<br>Successfully integrating graphene in standard processes for applications in electronics relies on the synthesis of high-quality films. In this work we study Low Pressure Chemical Vapor Deposition (LPCVD) growth of bilayer graphene on the outside surface of copper enclosures. The effect of several parameters on bilayer growth rate and domain size was investigated and high-coverage bilayers

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29

Waechtler, Thomas, Yingzhong Shen, Alexander Jakob, et al. "Evaluation of Phosphite and Phosphane Stabilized Copper(I) Trifluoroacetates as Precursors for the Metal-Organic Chemical Vapor Deposition of Copper." Universitätsbibliothek Chemnitz, 2006. http://nbn-resolving.de/urn:nbn:de:swb:ch1-200600315.

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Copper has become the material of choice for metallization of high-performance ultra-large scale integrated circuits. As the feature size is continuously decreasing, metal-organic chemical vapor deposition (MOCVD) appears promising for depositing the Cu seed layer required for electroplating, as well as for filling entire interconnect structures. In this work, four novel organophosphane and organophosphite Cu(I) trifluoroacetates were studied as precursors for Cu MOCVD. Details are reported on CVD results obtained with Tris(tri-n-butylphosphane)copper(I)trifluoroacetate, (<sup>n</s

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30

Kim, Dojun. "Chemical vapor deposition of tungsten-based diffusion barrier thin films for copper metallization." [Gainesville, Fla.] : University of Florida, 2009. http://purl.fcla.edu/fcla/etd/UFE0041042.

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31

Norman, John A. T., Melanie Perez, Stefan E. Schulz, and Thomas Waechtler. "New Precursors for CVD Copper Metallization." Universitätsbibliothek Chemnitz, 2008. http://nbn-resolving.de/urn:nbn:de:bsz:ch1-200801346.

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A novel CVD copper process is described using two new copper CVD precursors, KI3 and KI5, for the fabrication of IC or TSV (Through Silicon Via) copper interconnects. The highly conformal CVD copper can provide seed layers for subsequent copper electroplating or can be used to directly fabricate the interconnect in one step. These new precursors are thermally stable yet chemically reactive under CVD conditions, growing copper films of exceptionally high purity at high growth rates. Their thermal stability can allow for elevated evaporation temperatures to generate the high precurso

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32

Ross, Francis L. (Francis LaFayette) 1968. "Nano-cellular microstructure evolution in ion-induced chemical vapor deposition (II-CVD) of copper." Thesis, Massachusetts Institute of Technology, 2003. http://hdl.handle.net/1721.1/29971.

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Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Materials Science and Engineering, 2003.<br>Includes bibliographical references (p. 179-181).<br>A systematic investigation of the microstructure produced in ion-induced chemical vapor deposition (11-CVD) of copper from copper(I)hexafluoroacetylacetonatevinyltrimethylsilane (Cu(I)hfacVTMS) gas precursor is reported. II-CVD involves the ion-driven decomposition of Cu(l)hfacVTMS and subsequent deposition of copper films at ambient temperature. The thin films were grown with the aid of a broad beam Kaufman source in a "multibeam app

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33

Chaitoglou, Stefanos. "Growth Study and Characterization of Single Layer Graphene Structures Deposited on Copper Substrate by Chemical Vapor Deposition." Doctoral thesis, Universitat de Barcelona, 2016. http://hdl.handle.net/10803/400402.

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Graphene was first isolated from graphite using the method called the tape by scientists at the University of Manchester (Andre Geim, Konstantin Novoselov); such work was later awarded the Nobel Prize in Physics (2010) highlighting its innovative contribution. Still, the method of the tape or mechanical exfoliation can not provide larger domains graphene some hundred micrometers. different technologies that could promote the synthesis of continuous layers of graphene large area in order to boost the potential for large-scale applications were needed. Synthesis chemical vapor deposition (CVD) o

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34

Han, Jaesung. "Combined experimental and modelling studies of laser assisted chemical vapor deposition of copper and aluminum." Thesis, Massachusetts Institute of Technology, 1993. http://hdl.handle.net/1721.1/12494.

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35

Mukati, Kapil. "An alternative structure for next generation regulatory controllers and scale-up of copper(indium gallium)selenide thin film co-evaporative physical vapor deposition process." Access to citation, abstract and download form provided by ProQuest Information and Learning Company; downloadable PDF file, 311 p, 2007. http://proquest.umi.com/pqdweb?did=1397912441&sid=12&Fmt=2&clientId=8331&RQT=309&VName=PQD.

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Thesis (Ph.D.)--University of Delaware, 2007.<br>Principal faculty advisor: Babatunde Ogunnaike, Dept. of Chemical Engineering, and Robert W. Birkmire, Dept. of Materials Science & Engineering. Includes bibliographical references.

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36

Fiuza, Junior Raildo Alves. "Hidrogenólise do glicerol sobre catalisadores de cobre e cromo." reponame:Repositório Institucional da UFBA, 2012. http://www.repositorio.ufba.br/ri/handle/ri/11729.

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113 f.<br>Submitted by Ana Hilda Fonseca (anahilda@ufba.br) on 2013-04-05T17:38:46Z No. of bitstreams: 1 Dissertação_Raildo Alves Fiuza Junior.pdf: 4123130 bytes, checksum: 5d64b18d9c873984e7609ecb4496b552 (MD5)<br>Approved for entry into archive by Ana Hilda Fonseca(anahilda@ufba.br) on 2013-06-06T15:04:38Z (GMT) No. of bitstreams: 1 Dissertação_Raildo Alves Fiuza Junior.pdf: 4123130 bytes, checksum: 5d64b18d9c873984e7609ecb4496b552 (MD5)<br>Made available in DSpace on 2013-06-06T15:04:38Z (GMT). No. of bitstreams: 1 Dissertação_Raildo Alves Fiuza Junior.pdf: 4123130 bytes, checksum: 5d64b18d

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37

Olsson, Adam. "Graphene Growth through Chemical Vapor Deposition - Optimization of Growth and Transfer Parameters." Thesis, Umeå universitet, Institutionen för fysik, 2017. http://urn.kb.se/resolve?urn=urn:nbn:se:umu:diva-137546.

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The goal of this thesis work is to investigate the possibility to grow graphene by Chemical Vapor Deposition (CVD) on copper foil with acetylene as a precursor and varigon (5\% H$_2$ in Ar) as a carrier gas. The possibility of nitrogen doping by ammonia treatment during the growth process is also investigated. The possibility of graphene transfer, with the use of Poly(Methyl Metacrylate) (PMMA), from the copper onto another target substrate, Flourine doped Tin Oxide (FTO), is also explored. The main technique of characterization of the grown and transfered graphene is Raman spectroscopy, a gre

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38

Butterfield, Martin Thomas. "Surface structure of ultrathin metal films deposited on copper single crystals." Thesis, Loughborough University, 2000. https://dspace.lboro.ac.uk/2134/33132.

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Ultrathin films of Cobalt, Iron and Manganese have been thennally evaporated onto an fcc Copper (111) single crystal substrate and investigated using a variety of surface structural teclmiques. The small lattice mismatch between these metals and the Cu (111) substrate make them an ideal candidate for the study of the phenomena of pseudomorphic film growth. This is important for the understanding of the close relationship between film structure and magnetic properties. Growing films with the structure of their substrate rather than their bulk phase may provide an opportunity to grow materials w

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39

Liao, Wen, Daniel Bost, and John G. Ekerdt. "Growth of Ultra-thin Ruthenium and Ruthenium Alloy Films for Copper Barriers." Universitätsbibliothek Chemnitz, 2016. http://nbn-resolving.de/urn:nbn:de:bsz:ch1-qucosa-207151.

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We report approaches to grow ultrathin Ru films for application as a seed layer and Cu diffusion barrier. For chemical vapor deposition (CVD) with Ru3(CO)12 we show the role surface hydroxyl groups have in nucleating the Ru islands that grow into a continuous film in a Volmer-Weber process, and how the nucleation density can be increased by applying a CO or NH3 overpressure. Thinner continuous films evolve in the presence of a CO overpressure. We report an optimun ammonia overpressure for Ru nucleation and that leads to deposition of smoother Ru thin films. Finally, we report a comparison of a

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40

Plappert, Elisabeth-Charlotte. "Synthesis and characterization of copper and titanium compounds and their application as precursors in chemical vapor deposition /." [S.l.] : [s.n.], 1995. http://e-collection.ethbib.ethz.ch/show?type=diss&nr=10996.

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41

Bekdüz, Bilge [Verfasser], and Gerd [Akademischer Betreuer] Bacher. "Thermal and Plasma Enhanced Chemical Vapor Deposition of Graphene on Copper and Germanium / Bilge Bekdüz ; Betreuer: Gerd Bacher." Duisburg, 2020. http://d-nb.info/121603883X/34.

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42

Xiao, Zhifeng 1966. "Experimental and theoretical studies of the solubility of copper in liquid and vapor in the system NaC1-HC1-HO." Thesis, McGill University, 1999. http://digitool.Library.McGill.CA:80/R/?func=dbin-jump-full&object_id=36733.

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Copper solubility in water vapor and liquid was measured in the HCl-NaCl-H 2O system at temperatures up to 400°C and vapor-saturated pressure by two series of experiments. The thermodynamic data from these experiments were then applied to model the genesis of volcanogenic massive sulfide deposits and the partitioning of copper between vapor and liquid.<br>The solubility of copper in liquid was measured in vapor-saturated aqueous HCl/NaCl solutions at temperatures ranging from 40 to 300°C, total chloride concentrations from 0.01 to 1 m, and pH from 0 to 3.5. Copper was found to dissolve primari

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43

Eddy, Steven Kyle. "Chemical Vapor Deposition Based Synthesis of Graphene for Corrosion Mitigation of Copper and Fabrication of Extended Fullerene-Based Structures." Thesis, The University of Arizona, 2014. http://hdl.handle.net/10150/320065.

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44

Lassègue, Pierre. "Oxydation en lit fluidisé et dépôt de métaux par CVD en lit fluidisé sur nanotubes de carbone multi-parois - Application à l'industrie aéronautique." Thesis, Toulouse, INPT, 2016. http://www.theses.fr/2016INPT0132.

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Cette thèse s’inscrit dans le cadre du développement de nouveaux matériaux composites multifonctionnels, permettant de remplacer l’aluminium en tant qu’élément constituant le packaging de l’électronique embarquée dans les avions, afin de rendre ces derniers plus légers. L’association d’un polymère mécaniquement résistant avec des nano-charges conductrices est une alternative prometteuse. Cette thèse concerne l’étude du procédé de Dépôt Chimique à partir d’une phase Vapeur (CVD) en lit fluidisé pour déposer des métaux conducteurs, tels que le fer et le cuivre, à la surface de nanotubes de carbo

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45

Xiao, Zhifeng. "Experimental and theoretical studies of the solubility of copper in liquid and vapor in the system NaCl-HCl-H¦2O." Thesis, National Library of Canada = Bibliothèque nationale du Canada, 1999. http://www.collectionscanada.ca/obj/s4/f2/dsk1/tape4/PQDD_0033/NQ64695.pdf.

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46

Thompson, John O. 1962. "The importance of elemental stacking order and layer thickness in controlling the formation kinetics of copper indium diselenide." Thesis, University of Oregon, 2007. http://hdl.handle.net/1794/6197.

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xiii, 84 p. ; ill.<br>This dissertation describes the deposition and characterization of an amorphous thin film with a composition near that of CuInSe 2 (CIS). The creation of an amorphous intermediate leads to a crystalline film at low annealing temperatures. Thin films were deposited from elemental sources in a custom built high vacuum chamber. Copper-selenium and indium-selenium binary layered samples were investigated to identify interfacial reactions that would form undesired binary intermediate compounds resulting in the need for high temperature annealing. Although the indium-seleni

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47

Li, Kecheng. "Direct Liquid Evaporation Chemical Vapor Deposition(DLE-CVD) of Nickel, Manganese and Copper-Based Thin Films for Interconnects in Three-Dimensional Microelectronic Systems." Thesis, Harvard University, 2016. http://nrs.harvard.edu/urn-3:HUL.InstRepos:33493366.

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Electrical interconnects are an intrinsic part of any electronic system. These interconnects have to perform reliably under a wide range of environmental conditions and survive stresses induced from thermal, mechanical, corrosive and electrical factors. Semiconductor technology is predominantly planar in nature, posing a severe limitation to the degree of device integrations into systems such as micro-processors or memories. 3D transistor FinFET (Fin type Field Effect Transistors) has been used by Intel since the advent of its 22 nm technology node, and has now advanced further down to 14 nm.

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48

Courrege, Maeva. "Caractérisation des interactions plasma/parois dans un disjoncteur haute tension." Thesis, Toulouse 3, 2017. http://www.theses.fr/2017TOU30162/document.

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Les disjoncteurs à haute tension, présents dans le réseau électrique, permettent d'assurer en toute sécurité la distribution de l'électricité. Lorsqu'un défaut est détecté, ou lors d'une intervention de maintenance, l'ouverture des contacts électriques au sein du disjoncteur entraine l'apparition d'un arc électrique à ses bornes. La protection et la coupure ne seront effectives que lorsque l'arc électrique aura été coupé. De nombreux paramètres, géométriques et physiques entrent en jeu dans la capacité de coupure d'un disjoncteur. L'objectif de ces travaux de thèse consistait à analyser l'impa

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49

Waechtler, Thomas, Steffen Oswald, Nina Roth, et al. "Copper Oxide Films Grown by Atomic Layer Deposition from Bis(tri-n-butylphosphane)copper(I)acetylacetonate on Ta, TaN, Ru, and SiO2." Universitätsbibliothek Chemnitz, 2009. http://nbn-resolving.de/urn:nbn:de:bsz:ch1-200900734.

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Abstract:

The thermal atomic layer deposition (ALD) of copper oxide films from the non-fluorinated yet liquid precursor bis(tri-n-butylphosphane)copper(I)acetylacetonate, [(<sup>n</sup>Bu<sub>3</sub>P)<sub>2</sub>Cu(acac)], and wet O<sub>2</sub> on Ta, TaN, Ru and SiO<sub>2</sub> substrates at temperatures of < 160°C is reported. Typical temperature-independent growth was observed at least up to 125°C with a growth-per-cycle of ~ 0.1 Å for the metallic substrates and an ALD window extending down to 100°C for Ru. On SiO<sub>2</sub> and TaN the ALD window was observed between 110 and

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50

Guesmi, Ismaël. "Dépôt de couches minces de cuivre sur substrats polymères de forme complexes par pulvérisation cathodique magnétron avec ionisation de la vapeur." Phd thesis, Université Paris Sud - Paris XI, 2012. http://tel.archives-ouvertes.fr/tel-00703850.

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Abstract:

De nombreuses applications industrielles nécessitent le dépôt de films métalliques à la surface de polymères afin de conférer une fonction de conduction électrique à ces matériaux isolants. Cette étude a été motivée par la volonté de la société Radiall, dont une partie de l'activité concerne la réalisation de connecteurs à haute performance, de remplacer le procédé de métallisation par voie humide par un procédé de dépôt par voie sèche plasma. Le travail présenté ici porte ainsi sur l'étude du procédé de pulvérisation cathodique magnétron avec ionisation de la vapeur par plasma radiofréquence

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