Academic literature on the topic 'Couche tampon'
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Journal articles on the topic "Couche tampon"
Brito Lavoura, Rodrigo, Kamille Joana Casagrande, André Vinícius Camargo, and Diego C. S. A. da Silva. "Modelagem dos acessórios de imobilização e mesa de tratamento no Sistema de Planejamento Eclipse." Revista Brasileira de Física Médica 17 (December 7, 2023): 733. http://dx.doi.org/10.29384/rbfm.2023.v17.19849001733.
Full textAdnane, Mohamed, Toufik Sahraoui, Abdelkader Abderrahmane, Saad Hamzaoui, and Denis Chaumont. "Elaboration et caractérisation des matériaux binaires CuxS et Ag2S élaborés par la technique SILAR pour couche tampon de cellule solaire à base de couche absorbante CIS." Journal of Renewable Energies 13, no. 4 (October 25, 2023). http://dx.doi.org/10.54966/jreen.v13i4.228.
Full textSoppo Lobe, C. V., M. G. Emanda Ekoudi, M. Nyangono Ndongo, L. C. Tchuente Kom Kanmogne, J. M. Mbole, A. P. Minyem Ngombi, D. M. Aba’a, et al. "Étude comparative de la biodisponibilité in vitro des génériques et du princeps du Diclofénac comprimés et gélules à libération prolongée disponibles sur le marché de Yaoundé." Journal Africain de Technologie Pharmaceutique et Biopharmacie (JATPB) 2, no. 3 (December 20, 2023). http://dx.doi.org/10.57220/jatpb.v2i3.99.
Full textVan Luyn, Ariella. "Crocodile Hunt." M/C Journal 14, no. 3 (June 25, 2011). http://dx.doi.org/10.5204/mcj.402.
Full textDissertations / Theses on the topic "Couche tampon"
Ayachi, Boubakeur. "Towards full sputtering deposition process for CIGS solar cell fabrication : from single thin film deposition up to device characterization." Thesis, Lille 1, 2016. http://www.theses.fr/2016LIL10150/document.
Full textNowadays, and after more than four decades of research and development of the CIS based technology, a direct competition with silicon technology is still far from being won; however there exists some niche markets where the silicon technology cannot be used (flexible photovoltaic) or less favourable (BIPV). The current fabrication processes are still suffering from some drawbacks: (i) some of the used materials and/or techniques have a large environmental footprint (CBD-CdS/CBD-ZnSxO1-x), (ii) some developed alternatives are expensive (evaporated InxSy), (iii) the used techniques are not easily up scalable (evaporation) or based on the use of toxic atmospheres (Se based). This PhD work presents our strategy in moving towards a full sputtering process and in using only environmentally friendly materials. In this framework, we kept using standard material and process for the deposition of the back contact layer. We developed a new process for the deposition of the absorber layer which is based on pulsed DC-magnetron sputtering at room temperature from a single quaternary target without any additional selenium supply, followed by an annealing under inert atmosphere. We developed a room temperature sputtering process for the deposition of the ZnSxO1-x buffer layer. We also developed our appropriate pulsed DC and RF sputtering processes for the deposition of the window layer. Several characterisation techniques (XRD, SEM, FIB-SEM, EDX, Raman, SIMS, Hall Effect, GDOES, UV-Vis, and I-V) have been used to investigate the effect of deposition conditions on thin films properties as well as to characterize the final solar cells which best efficiency result is slightly under 12%
Laurencic, Christopher. "Cellules solaires en couches minces à base de jonctions Cu(In,Ga)Se2/sulfure d’indium co-évaporé : influence des interfaces sur les performances photovoltaïques." Nantes, 2013. https://archive.bu.univ-nantes.fr/pollux/show/show?id=06809252-165b-4dc9-9bca-8b627e3a3c45.
Full textThis work deals with solar cells having a glass/Mo/Cu(In,Ga)Se2/In2S3/i-ZnO/ZnO:Al structure. In particular the influence of the hetero-interfaces (CIGSe/In2S3 and In2S3/i-ZnO) has been investigated. The impact of the substrate temperature during indium sulfide buffer layer co-evaporation and its thickness has shown the crucial influence the presence of sodium compounds at the In2S3/i-ZnO interface on the optoelectronic behaviour of the solar cells. An operating model of the solar cells based on Cu(In,Ga)Se2 with co-evaporated In2S3 buffer layer has been submitted to explain the obtained results. It suggests that, in the case of this work, the low doping of the buffer layer leads to a p-i-n structure, detrimental for the optoelectronic properties of the solar cell. Simulations have been performed and support this hypothesis. This new interpretation for the behaviour of the electronic junction suggests paths for improvement, specifically by increasing the n-type character of In2S3 based buffer layers, for example, by doping them with tin
El, jouad Zouhair. "Réalisation et caractérisation des cellules photovoltaïques organiques." Thesis, Angers, 2016. http://www.theses.fr/2016ANGE0022/document.
Full textThis thesis concerns elaboration and characterization of classical and inverse organic photovoltaic cells, specifically improving the anodic and cathodic buffer layers. We started by improving the cathode buffer layers with different electron donors: copper phthalocyanine CuPc, subphtalocyanine SubPc and thiophene derivatives (BSTV and BOTV). In the first case of electron donor (CuPc), we highlighted the effect of the thin layer of cesium compound, used as a cathodic buffer layer in inverse cells, on the collection of electrons after heat treatment.We have also shown that the hybrid cathodic buffer layer, Alq3 (9 nm) / Ca (3nm) improves the cell performance whatever the electron donor without annealing. In the case of thiophene derivatives, we have shown how the morphology of the organic layers surface can influence the performance of organic photovoltaic cells. In the case of SubPc used in inverse cells, we studied the effect of the deposition rate of the layer on the morphology of SubPc surface.Regarding the improvement of the anodic buffer layers, we investigated those based on the SubPc and pentathiophene (5T) in classical cells. After optimization of the electron donors thickness, we have shown that the bilayer MoO3 (3 nm) / CuI (1.5 nm) used as an anodic buffer layer, improves cell performances, whatever the electron donor. In the case of SubPc, we obtained a efficiency approaching 5%
Nguyen, Duc-Tuong. "Utilisation d’un oxyde comme couche tampon à l’interface électrode/semi-conducteur organique dans une cellule photovoltaïque." Nantes, 2013. http://archive.bu.univ-nantes.fr/pollux/show.action?id=ee999c44-b1be-41e0-8376-9366df9762a7.
Full textThis work involved the use of an oxide as the buffer layer at the electrode / organic semiconductor interface in a photovoltaic cell in order to increase the efficiency and lifetime. Currently the efficiency of organic solar cells is restricted by the high potential barrier at the electrode / semiconductor contact and inefficiencies in the transport of electric charges to the electrodes. Our study focuses on the optimization of NiO thin films deposited by reactive sputtering DCMS and HIPIMS. We have shown that the discharge conditions such as pressure, power and percentage of reactive gas play an important role on the properties of NiO thin films. The films were well crystallized with a preferential orientation (111) or (200) related to the sub-stoichiometric in oxygen or nickel. The deviation from stoichiometry leads to an increase of the conductivity but also to a decrease of the transmittance. After annealing processing, these films became transparent whatever their initial composition while maintaining a preferred orientation which is representative of their initial oxygen content. For NiO thin films deposited by HIPIMS we have proved that it was possible to precisely control the amount of oxygen in our films by varying the pulse width but also possible to adjust the optical gap from 3. 28 eV up 4. 18 eV. Then we have shown that by introducing a thin layer of NiO at the ITO / Organic semi-conductor interface, the performance and the lifetime of organic solar cells could be improve by 3 and more than 17 times respectively. Finally, we optimized electrical and optical properties of multilayer structures MoO3/Ag/MoO3 that could eventually replace the ITO by a structure MoO3 (20 nm) / Ag (10 nm) / MoO3 (35 nm)
Hildebrandt, Thibaud. "Optimisation des interfaces absorbeur/couche tampon/fenêtre avant dans les cellules solaires à base de Cu(In,Ga)Se2." Thesis, Paris 6, 2014. http://www.theses.fr/2014PA066720.
Full textThe replacement of CdS-based buffer layer in Cu(In,Ga)Se2 solar cells has been one of the main challenges of the research community for the last decade. Today, one of the most promising alternative material is the chemically bath deposited Zn(S,O,OH). Because of its low deposition rate and of metastable behavior, it becomes necessary to proceed to an optimization of experimental conditions and of the various interfaces. The first part of this work has been dedicated to the optimization of the deposition bath thanks to the introduction of new additives. It has been possible to underline the additive effects on both the deposition rate and on the chemical composition of the deposited layers. The second part of this work has been dedicated to the optimization of the (Zn,Mg)O/ZnO:Al window layer. Thanks to an improvement of the sputtering conditions, it has been possible to reduce metastability of the solar cells, and to limit sodium migration up to the Zn(S,O,OH) layer. These optimized conditions combined to the variation of the CIGSe surface composition have allowed us to outperform CdS-based references solar cells
Duszynski, Isabelle. "Réalisation et caractérisation électrique de transistors HEMTs AlInAs/GaInAs de longueur de grille sub-50 nanomètres et de transistors sans couche tampon." Lille 1, 2005. https://pepite-depot.univ-lille.fr/RESTREINT/Th_Num/2005/50376-2005-346.pdf.
Full textAinsi, en augmentant ce rapport à 1,5 (cas des transistors sur barrière fine), on obtient une fréquence ft de 253GHz et une fréquence fmax de 380GHz. La dernière structure, à barrière fine et mixte, nous a permis d'obtenir des fréquences ft de l'ordre de 270GHz rien qu'en augmentant légèrement l'épaisseur de la barrière (puisque la grille a été déposée sur la Couche d'InP). Ces premiers résultats indiquent les potentialités offertes par l'utilisation d'une barrière Schottky mixte. Ces résultats pourraient être améliorés par l'utilisation d'un "double recess", ce qui permettrait de diminuer les zones trop importantes d'extensions de recess, à l'origine de la dégradation des performances fréquentielles de ces composants ultimes. L'amélioration de certains paramètres électriques liée à l'utilisation d'un recess mieux adapté permettrait d'aboutir à une fréquence ft de 520GHz, proche de l'état de l'art. Néanmoins, la réduction des dimensions atteint des limites, c'est pourquoi nous avons envisagé d'étudier des composants en rupture technologique avec les précédents transistors appelés "transistors sans couche tampon". L'idée est de venir supprimer la couche tampon qui est à l'origine d'une augmentation de la conductance de sortie par l'injection de porteurs dans cette couche. La réalisation technologique de ces composants est basée sur la technique de report de substrat, qui a été mise au point et adaptée à la réalisation d'un HEMT sans couche tampon. Les premiers résultats électriques indiquent que la technique de report de substrat affecte peu les caractéristiques de la couche active. Bien que nous ayons réalisé les premiers transistors sans couche tampon de longueur de grille 100nm, les caractéristiques électriques observées ne sont pas celles escomptées. Toutefois l'origine de ces faibles performances a été identifïée, et des solutions d'amélioration sont proposées
Couzinie-Devy, François. "Cellules solaires à base de Cu(In,Ga)Se² : adaptation des propriétés de l'absorbeur à la couche tampon d'(In,Al)²S3 co-évaporée." Nantes, 2009. http://www.theses.fr/2009NANT2114.
Full textStandard Cu(In,Ga)Se2(CGISe) based solar cells have a thin, chemical bath deposited, cadmium sulfide buffer layer. Its replacement by a cadmium-free material deposited by a physical process (PVD) is among the challenges of the research community. In the present work, a dual approach has been followed working on both the properties of a new alternative buffer layer and the optimisation of the CIGSe layer. The new buffer layer investigated belongs to the indium sulfide family : In2-2xA12xS3. It is observed that the partial substitution of indium by aluminium yields a band gap increase of the material mainly affecting the conduction band states. Meanwhile, an accurate tuning of the CIGSe growth parameters allowed the control the films, grains orientation and roughness. This optimisation of the CIGSe led to the reach of national record 18 % efficiency cell. Furthermore, the combination of these progress with the understanding of the In2-2x-A12xS3, films properties makes it possible the realisation of 13 % efficiency devices with a PVD deposited (In,A1)2-S3 buffer layer
OULD, EL MOCTAR CHEIKH. "Elaboration et etude de films de semi-conducteurs ternaires chalcopyrites a large bande interdite cualx 2(x = se, te), en perspective d'application photovoltaique comme couche tampon." Nantes, 1999. http://www.theses.fr/1999NANT2098.
Full textMakha, Mohammed. "Utilisation de diverses électrodes conductrices et transparentes comme anode des cellules photovoltaïques organiques : optimisation de l’interface à l’aide des couches tampons." Angers, 2014. https://tel.archives-ouvertes.fr/tel-01511059.
Full textThe aim of our work was the use of anode buffer layers to improve the performances of organic solar cells based on small molecules such as phtalocyanine, Oligothiophene and triphenylamine. However, the introduction of 3 nm of molybdenum oxide at the interface between the ITO (tin-doped indium ox-ide), used as anode, and the different donors of electron leads to an improvement of charge collection efficiency, therefore, the efficiency of the solar cells. Meanwhile, the replacement of MoO3 by 3 nm of CuI increases the carrier mobility of the conductivity of the organic layers, which consequently improves the density of the short circuit current Jsc. When the hybrid buffer layer MoO3 /CuI is used at the interface ITO/electron donors, best results were obtained irrespective of the electron donor, which can be explained by the double role: MoO3 provides a very good charge collection, and CuI which im-proves Jsc by affecting the growth mode of the organic layers. After validating the applicability of these buffer layers when the ITO was used as anode of the solar cells, other conductive and transparent electrodes such as sputtered aluminum-doped zinc oxide (AZO), tin doped indium oxide (FTO), as well as multi layer structures MoO3/Ag/MoO3 were used as anode. We have shown that these electrodes are considered as an alternative to replace ITO, especially after optimizing their interface with the CuPc used as electron donor using MoO3 , CuI and MoO3 /CuI buffer layers
Lin, Jie. "Etude détaillée des structures cohérentes de la zone tampon de la turbulence de paroi à l'aide de données de PIV stéréoscopique." Ecole Centrale de Lille, 2006. https://pepite-depot.univ-lille.fr/LIBRE/Th_Num/2006/50376-2006-Lin.pdf.
Full textA Stereoscopic PIV experiment, performed on a fully developed turbulent flow along a flat plate at Reθ [thêta] = 7800 and in 10 streamwise-spanwise planes parallel to the wall, has been analyzed in detail. The objectives of the work were to study the characteristics of the turbulent flow in the region 114. 5 ≤ y+ ≤ 48. 0, to observe and quantify the coherent structures (e. G. Steaks, ejections, sweeps and streamwise vortices) and to investigate the spatial relations between them so as to provide an organization model near the wall. The present study began with the selection of the most suitable method for the SPIV processing, which was used to obtain the 2D3C instantaneous velocity fields. Then the basic statistics of the turbulence were analyzed and compared to the results of other studies to validate the database. The two-point spatial correlations were computed to evidence the existence of coherent structures. Following that, these structures were detected by a newly developed method based on pattern recognition and their statistical characteristics were investigated in detail. Finally, the two-point correlations were performed on these structures. The results and this statistical analysis provide information on the flow organization. The present study shows that the wall attached streamwise vortices are centred in the region 20 to 30 wall units. Ejections and sweeps are associated with low and high speed streaks respectively and both are strongly linked to streamwise vortices. The characteristics of these coherent structures are quantified and they depend on wall distance. Moreover, the results support the idea of ‘merging of vortices’
Book chapters on the topic "Couche tampon"
Kumbhare, Rohit, Shivali Nimbalkar, Rupali Chopade, and V. K. Pachghare. "Tamper Detection in MongoDB and CouchDB Database." In Proceeding of International Conference on Computational Science and Applications, 109–17. Singapore: Springer Singapore, 2020. http://dx.doi.org/10.1007/978-981-15-0790-8_12.
Full textChurakova, Anna Alexandrovna, Dmitry Valerievich Gunderov, and Milyausha Rimovna Ibragimova. "Fractographic analysis of the course-grained and ultrafine-grained alloy Ti49.1Ni50.9 at the change of the parameter of the speed sensitivity and the activating volume of deformation." In Application to Journal. Tambov University Reports. Series: Natural and Technical Sciences, 321–25. Publishing House “Derzhavinskiy”, 2018. http://dx.doi.org/10.20310/1810-0198-2018-23-122p-321-325.
Full textConference papers on the topic "Couche tampon"
Dama, Nilesh, and Mehdi Ahmadian. "Discrete Element Modeling of Railway Ballast for Studying Railroad Tamping Operation." In 2020 Joint Rail Conference. American Society of Mechanical Engineers, 2020. http://dx.doi.org/10.1115/jrc2020-8051.
Full textAaron R. Dickinson and Donald M. Johnson. "A Low-Cost Programmable Logic Control (PLC) Trainer for Use in a University Agricultural Electricity Course." In 2005 Tampa, FL July 17-20, 2005. St. Joseph, MI: American Society of Agricultural and Biological Engineers, 2005. http://dx.doi.org/10.13031/2013.19676.
Full textYulianto, Budi, Andyni Khosasih, Evawaty Tanuar, and Yuventia Prisca Diyanti Todalani Kalumbang. "Taman Belajar: Learning Management System (LMS) that Provides Free Massive Open Online Course (MOOC) for School Students." In ICETM'21: 2021 4th International Conference on Education Technology Management. New York, NY, USA: ACM, 2021. http://dx.doi.org/10.1145/3510309.3510318.
Full textГолофаст, Л. А. "PHANAGORIA IN THE 4th – 7th CENTURIES (WRITTEN SOURCES AND ARCHAEOLOGICAL DATA)." In Hypanis. Труды отдела классической археологии ИА РАН. Crossref, 2023. http://dx.doi.org/10.25681/iaras.2021.978-5-94375-350-3.42-57.
Full textReports on the topic "Couche tampon"
Bonner, Stephen Ray, and Dana M. Sandoval. Tamper Indicating Device: Initial Training, Course 50112. Office of Scientific and Technical Information (OSTI), January 2018. http://dx.doi.org/10.2172/1418783.
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