Relevant bibliographies by topics / Couloir de mobilité

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  1. Journal articles
  2. Dissertations / Theses
  3. Book chapters
  4. Conference papers

Academic literature on the topic 'Couloir de mobilité'

Author: Grafiati
Published: 25 May 2024
Last updated: 31 July 2025

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Journal articles on the topic "Couloir de mobilité"

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Bovey, Laurent. "De la classe spéciale à la classe régulière." Revue suisse de pédagogie spécialisée 14, no. 01 (2024): 13–19. http://dx.doi.org/10.57161/r2024-01-03.

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Depuis une vingtaine d’années en Suisse, le « taux de séparation scolaire », c’est-à-dire le nombre d’élèves scolarisés en classe spéciale ou en établissement de pédagogie spécialisée, ne cesse de diminuer. Une partie des classes spéciales ont fermé et les élèves ont été réintégrés en classe régulière. Une autre partie de ces classes ont été transformées en dispositifs plus flexibles favorisant une plus grande mobilité des élèves. Deux recherches menées auprès d’élèves bénéficiant de mesures de pédagogie spécialisée dans le canton de Vaud montrent qu’une partie de ces élèves restent dans les f
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Scalettaris, Giulia. "L’impact de la crise de 2015 sur la mobilité des Afghans à travers l’Europe." Mondes & Migrations 1348 (2025): 55–62. https://doi.org/10.4000/13lne.

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L’année 2015 marque un tournant dans la mobilité de demandeurs d’asile et réfugiés au sein de l’Europe, en matière de volume des arrivées, de reconfiguration des routes et de direction des flux. L’analyse des premières données statistiques et ethnographiques du projet AMORE (Afghan Europeans. The Invention of a Mobility Regime) portant sur les circulations des populations afghanes en Europe permet d’identifier l’existence de « couloirs migratoires » tout en invitant à prendre des précautions dans l’interprétation des statistiques.
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Nagy, Raluca. "Tourisme et migration dans le Maramureş." Ethnologies 31, no. 1 (2009): 111–26. http://dx.doi.org/10.7202/038502ar.

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Dans cet article nous entreprenons de souligner la liaison entre deux formes de mobilité, tourisme rural et migration de travail, à travers quelques points d’articulation. Dans le cas du Maramureş, une région du nord de la Roumanie, on se trouve devant deux types de « couloirs de mobilité », vers et à partir de la région. Ces couloirs se superposent au niveau des pratiques autant qu’au niveau des réseaux et des ressources. Les cinq points plus concrets qu’on va aborder ici sont la circulation de l’argent, le rôle des médiateurs culturels des migrants, la question du confort et la façon d’inves
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Potbhare, Siddharth, Gary Pennington, Neil Goldsman, et al. "Using a First Principles Coulomb Scattering Mobility Model for 4H-SiC MOSFET Device Simulation." Materials Science Forum 527-529 (October 2006): 1321–24. http://dx.doi.org/10.4028/www.scientific.net/msf.527-529.1321.

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A physics based device simulator for detailed numerical analysis of 4H-SiC MOSFETs with an advanced mobility model that accounts for the effects of bulk and surface phonons, surface roughness and Coulomb scattering by occupied interface traps and fixed oxide charges, has been developed. A first principles quasi-2D Coulomb scattering mobility model specifically for SiC MOSFETs has been formulated. Using this, we have been able to extract the interface trap density of states profile for 4H-SiC MOSFETs and have shown that at room temperature, Coulomb scattering controls the total mobility close t
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Pérez-Tomás, Amador, Michael R. Jennings, Philip A. Mawby, et al. "SiC MOSFET Channel Mobility Dependence on Substrate Doping and Temperature Considering High Density of Interface Traps." Materials Science Forum 556-557 (September 2007): 835–38. http://dx.doi.org/10.4028/www.scientific.net/msf.556-557.835.

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In prior work we have proposed a mobility model for describing the mobility degradation observed in SiC MOSFET devices, suitable for being implemented into a commercial simulator, including Coulomb scattering effects at interface traps. In this paper, the effect of temperature and doping on the channel mobility has been modelled. The computation results suggest that the Coulomb scattering at charged interface traps is the dominant degradation mechanism. Simulations also show that a temperature increase implies an improvement in field-effect mobility since the inversion channel concentration in
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Ji, Qizheng, Jun Liu, Ming Yang, et al. "Influence of Proton Irradiation Energy on Gate–Channel Low-Field Electron Mobility in AlGaN/GaN HEMTs." Electronics 12, no. 6 (2023): 1473. http://dx.doi.org/10.3390/electronics12061473.

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AlGaN/GaN high-electron-mobility transistors (HEMTs) with two different gate–drain distances (30 μm and 10 μm) were exposed to 1 MeV, 0.6 MeV, and 0.4 MeV protons at a fluence of 2.16 × 1012 cm−2. The gate–channel electron density and low-field mobility were obtained by measuring the capacitance–voltage characteristics and current–voltage characteristics. After proton irradiation, the gate–channel low-field electron mobility of the AlGaN/GaN HEMT with a 30 μm gate–drain distance increases and that with a 10 μm gate–drain distance decreases. It is studied and found that the mobility behavior is
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Pérez-Tomás, Amador, Miquel Vellvehi, Narcis Mestres, José Millan, P. Vennegues, and J. Stoemenos. "Modelling of the Anomalous Field-Effect Mobility Peak of O-Ta2Si/4H-SiC High-k MOSFETs Measured in Strong Inversion." Materials Science Forum 527-529 (October 2006): 1059–62. http://dx.doi.org/10.4028/www.scientific.net/msf.527-529.1059.

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A high field-effect mobility peak (50 cm2/Vs) has been extracted in (0001) Si face 4HSiC MOSFETs with oxidized Ta2Si (O-Ta2Si) high-k dielectric (k~20) as gate insulator, with their gates in the strong inversion regime. The interface state density (Dit) has not been particularly reduced in O-Ta2Si capacitors. This anomalous mobility enhancement is explained in terms of Coulomb scattering reduction and quantified using a physical model based on the Lombardi mobility model. The anomalous mobility increase is closely related to the leakage current, and also to the gate breakdown mechanism. We pro
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Chen, W. P. N., Pin Su, and K. I. Goto. "Investigation of Coulomb Mobility in Nanoscale Strained PMOSFETs." IEEE Transactions on Nanotechnology 7, no. 5 (2008): 538–43. http://dx.doi.org/10.1109/tnano.2008.2004771.

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Driussi, Francesco, and David Esseni. "Simulation Study of Coulomb Mobility in Strained Silicon." IEEE Transactions on Electron Devices 56, no. 9 (2009): 2052–59. http://dx.doi.org/10.1109/ted.2009.2026394.

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Walczak, Jakub, and Bogdan Majkusiak. "Scattering mechanisms in MOS/SOI devices with ultrathin semiconductor layers." Journal of Telecommunications and Information Technology, no. 1 (March 30, 2004): 39–49. http://dx.doi.org/10.26636/jtit.2004.1.230.

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Main scattering mechanisms affecting electron transport in MOS/SOI devices are considered within the quantum-mechanical approach. Electron mobility components (i.e., phonon, Coulomb and interface roughness limited mobilities) are calculated for ultrathin symmetrical DG SOI transistor, employing the relaxation time approximation, and the effective electron mobility is obtained showing possible mobility increase relative to the conventional MOSFET in the range of the active semiconductor layer thickness of about 3 nm.
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Dissertations / Theses on the topic "Couloir de mobilité"

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Cortina, Mélanie. "Fostering synergy between public transportation and autonomous mobility on demand : the prospects of regulation." Electronic Thesis or Diss., Vaulx-en-Velin, École nationale des travaux publics de l’État, 2023. http://www.theses.fr/2023ENTP0010.

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Grâce à son aptitude à répondre à une demande asymétrique de manière efficace et son coût d'exploitation réduit, la mobilité autonome à la demande (MAD) pourrait permettre de diminuer l'empreinte carbone du système de transport urbain tout en maintenant sa performance. Mais pour éviter l'augmentation du nombre de kilomètres parcourus, la MAD doit fonctionner en synergie avec les transports en commun (TC), plus efficaces pour dégager des économies d'échelle. Or la coopération entre MAD privée et TC n'est pas garantie comme en témoigne l'exemple des Uber. Cette thèse cherche donc à explorer la q
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Potbhare, Siddharth. "Characterization of 4H-SiC MOSFETs using first principles coulomb scattering mobility modeling and device simulation." College Park, Md. : University of Maryland, 2005. http://hdl.handle.net/1903/3347.

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Thesis (M.S.) -- University of Maryland, College Park, 2005.<br>Thesis research directed by: Dept. of Electrical and Computer Engineering. Title from t.p. of PDF. Includes bibliographical references. Published by UMI Dissertation Services, Ann Arbor, Mich. Also available in paper.
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Devogelaere, Jonathan. "Les couleurs du mobilier d'apparat en bronze dans le monde gréco-romain, du IIe siècle avant notre ère au IIe siècle de notre ère : de la caractérisation technique aux valeurs symboliques." Thesis, Aix-Marseille, 2018. http://www.theses.fr/2018AIXM0602.

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Ma thèse a pour objet l’étude des couleurs du mobilier d’apparat en bronze dans le monde gréco-romain, produit entre le IIe s. av. n. è. et le IIe s. de n. è. en Méditerranée. Elle place au cœur de sa démarche historique la caractérisation des couleurs, leur analyse technique et l’étude de leurs valeurs symboliques, associées à des contextes de production et de réception précis. Redonner en effet aux couleurs toute leur place dans l’ameublement de luxe en bronze, en conduire l’étude typologique, iconographique et technique, les replacer dans leur contexte de réception permet de comprendre non
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Liu, Liu. "Corridors urbains et Transit Oriented Development : Enseignements d’une modélisation intégrée des transports et de l’usage du sol appliquée à la métropole lilloise." Thesis, Lille 1, 2016. http://www.theses.fr/2016LIL10117/document.

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La mobilité des personnes dépend à la fois de l’offre de service de transports, et de l’organisation de notre espace de vie. Nos choix de localisation de résidence, de travail, ainsi que nos choix de déplacement et d’itinéraire dépendent de nos budgets monétaires, temporels et de nos préférences. L’organisation de notre espace de vie a donc de fortes répercussions sur les consommations d’espace et d’énergie. Peut-on concevoir notre espace de vie en 2040 sous une forme plus sobre ? Pour parvenir à un nouvel équilibre, nous proposons, sur le terrain de l’agglomération lilloise, d’appliquer le co
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Cassilde, Stéphanie. "Choix rationnel, langage et représentations des inégalités et des discriminations. Une étude des déclarations de couleurs de peau dans le Brésil contemporain." Phd thesis, Université d'Auvergne - Clermont-Ferrand I, 2012. http://tel.archives-ouvertes.fr/tel-00713948.

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Au Brésil les déclarations de couleurs de peau sont influencées par les caractéristiques socioéconomiques des personnes. Pour appréhender ce phénomène, nous avons réalisé une enquête de terrain de neuf mois (2006-2007) dans deux entreprises de la ville de São Paulo. En liant économie et sociologie, nous identifions les motivations et mécanismes à l'oeuvre lors d'une déclaration de couleur de peau, en appréhendant la mosaïque brésilienne des couleurs de peau dans sa globalité. Nous soulignons la fluidité de la définition des catégories et des processus de catégorisation. La cor [couleur] devien
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Wu, Chih-Jung, and 吳致融. "Investigation of Remote Coulomb Scattering Induced Mobility Degradation in Advanced VLSI Devices." Thesis, 2007. http://ndltd.ncl.edu.tw/handle/46699028835799800777.

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碩士<br>國立交通大學<br>電子工程系所<br>95<br>Abstract. The remote Coulomb scattering (RCS) induced mobility degradation in advanced VLSI devices is investigated. Mobility degradation in HK dielectric MOSFETs is observed. By two-frequency charge pumping method, we show that the mobility degradation is caused from the HK bulk traps. An analytical equation for RCS mobility is calculated to simulate the RCS effect. By using SONOS FN programming, we confirm that the mobility will by reduced by RCS. Our result shows that mobility will be severely limited by RCS as interfacial oxide thickness (IOT) scaling. Try
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Book chapters on the topic "Couloir de mobilité"

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Potbhare, S., Gary Pennington, Neil Goldsman, et al. "Using a First Principles Coulomb Scattering Mobility Model for 4H-SiC MOSFET Device Simulation." In Silicon Carbide and Related Materials 2005. Trans Tech Publications Ltd., 2006. http://dx.doi.org/10.4028/0-87849-425-1.1321.

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Bonnefoy, Baptiste. "Chapitre IV. Les officiers de couleur : mobilité sociale, mobilité spatiale." In Au-delà de la couleur. Presses universitaires de Rennes, 2022. http://dx.doi.org/10.4000/books.pur.164481.

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Bilbro, Jeffrey. "Fidelity." In Virtues of Renewal. University Press of Kentucky, 2018. http://dx.doi.org/10.5810/kentucky/9780813176406.003.0007.

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Our economy rewards those who are rootless; the well-paid Creative Class that Richard Florida celebrates thrives on geographic hyper-mobility. Yet such mobility encourages us to invest not in communities, but in our own résumés and careers, and it becomes tempting to leave behind our mistakes and the places they’ve damaged. Berry’s practice of careful revision, particularly evident in his early novels Nathan Coulter and A Place on Earth, demonstrates a patient faithfulness to develop his imaginative vision. In the case of Nathan Coulter, this entails reimagining the death of Nathan’s grandfath
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Singleton, John. "Inhomogeneous and hot carrier distributions in semiconductors." In Band Theory and Electronic Properties of Solids. Oxford University PressOxford, 2001. http://dx.doi.org/10.1093/oso/9780198506454.003.0012.

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Abstract In a conventional metal such as Cu, an abnormal distribution of electronic charge will vanish very quickly indeed (in less than about 1 picosec). The reason for this rapid dispersion is of course the strong Coulomb forces between 158 electrons spaced by distances ˜ 0.3 nm and the electrons’ high mobility. However, in semiconductors, we have the possibility of the simultaneous existence of holes and electrons (see Section 9.3.1). If we inject an excess of minority carriers (say holes) into a semiconductor, then the majority carriers (say electrons) will move to the region containing th
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Ghosh, Rahul, Tanmoy Majumder, Abhishek Bhattacharjee, and Rupanjal Debbarma. "FinFET Advancements and Challenges: A State-of-the-Art Review." In Nanoelectronics Devices: Design, Materials, and Applications (Part I). BENTHAM SCIENCE PUBLISHERS, 2023. http://dx.doi.org/10.2174/9789815136623123010011.

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A review of the electrical and physical characteristics of FinFETs is presented here. This work focuses on the latest structures of FinFET according to its classifications and three-dimensional schematics. Through studying the output I-V characteristics, the transfer characteristics, and the subthreshold current in the FinFET channel, the electrical characteristics of FinFETs have been analyzed. Considerations were made of coulomb, phonon, and surface roughness scattering to examine effective charge carrier mobility in the FinFET channel. Lastly, in this chapter, the impact of the Fin layer sh
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Sri, G. V. Keerthi, Venkataramana Veeramsetty, and D. M. Vinod Kumar. "Next-Generation Battery Monitoring Using AI for Sustainable Electric Mobility." In Driving Innovation at the Intersection of Renewable Energy and the Internet of Vehicles. IGI Global, 2025. https://doi.org/10.4018/979-8-3373-3321-2.ch007.

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The surge in electric vehicle (EV) use has increased the need for efficient battery management systems, focusing on State of Health (SOH) monitoring for safety, longevity, and performance. Traditional SOH estimation methods like Coulomb counting, EIS, and Kalman filtering face limitations in accuracy and real-time applicability. AI-based approaches, including Machine Learning models like linear regression, SVR, and random forests, and Deep Learning techniques such as RNNs, LSTMs, and CNNs, offer improved precision in capturing battery degradation. Real-world datasets such as CALCE, NASA, Oxfor
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Baker, Jack R., Jeffrey Bilbro, and Wendell Berry. "Introduction." In Wendell Berry and Higher Education. University Press of Kentucky, 2017. http://dx.doi.org/10.5810/kentucky/9780813169026.003.0001.

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An education for health begins by forming the imaginations and affections of students so that rather than desiring upward mobility, they can imagine healthy, placed lives. The introduction starts with a reading of Hannah Coulter, whose title character describes her fear that she has failed to tell the right stories to her children, thus inadvertently contributing to their desire for upward mobility at the cost of healthy communities. Because our affections have such far-reaching influence—shaping the questions we ask and the ways we arrange knowledge—Berry focuses on the conflicting internal d
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Graf, William L. "Fluvial Sediment, Forms, and Processes." In Plutonium and the Rio Grande. Oxford University Press, 1995. http://dx.doi.org/10.1093/oso/9780195089332.003.0009.

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Although there are numerous aspects of sediment that might be considered in conjunction with questions related to plutonium transport and storage in rivers, particle size is the critical characteristic. Information on the size distribution of particles in sedimentary deposits connects plutonium, sediment, and river processes. An explanation of the geography of plutonium in the regional river system requires knowledge of particle sizes, the distribution of those particle sizes, and their potential mobility in the regional canyons, rivers, and reservoirs. Some general data concerning the size ch
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Conference papers on the topic "Couloir de mobilité"

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Xu, Haoyu, Jing Zhang, Shuhua Wei, Xiaolei Wang, and Wenwu Wang. "Electron Mobility Degradation Due to Remote Coulomb Scattering in Ge MOSFET." In 2016 International Conference on Computer Science and Electronic Technology. Atlantis Press, 2016. http://dx.doi.org/10.2991/cset-16.2016.72.

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Driussi, Francesco, and David Esseni. "Revised analysis of Coulomb scattering limited mobility in biaxially strained silicon MOSFETs." In 2009 Proceedings of the European Solid State Device Research Conference (ESSDERC). IEEE, 2009. http://dx.doi.org/10.1109/essderc.2009.5331465.

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Kumar, Raman, MD SAIF AHMAD, Krishna Challa, Ashish Ranjan, and Madhuri Bayya. "Precise and Robust SoC Estimation Using Adaptive Filters-Based Techniques for Electric Trucks." In 11th SAEINDIA International Mobility Conference (SIIMC 2024). SAE International, 2024. https://doi.org/10.4271/2024-28-0152.

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&lt;div class="section abstract"&gt;&lt;div class="htmlview paragraph"&gt;The traction for zero emission vehicles in the transportation industry is creating a focus on Battery Electric vehicles (BEV) as one of the potential alternate powertrain sources. To operate BEV safely and efficiently battery operating conditions and health is of utmost importance.&lt;/div&gt;&lt;div class="htmlview paragraph"&gt;Battery management system (BMS) controller is needed for optimized and safe operation of high voltage (HV) battery. For correct behavior of BMS, accuracy of state of charge (SoC) estimation is i
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Weber, Olivier, and Shin-ichi Takagi. "New Findings on Coulomb Scattering Mobility in Strained-Si nFETs and its Physical Understanding." In 2007 IEEE Symposium on VLSI Technology. IEEE, 2007. http://dx.doi.org/10.1109/vlsit.2007.4339755.

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Zhao, Yi, Mitsuru Takenaka, and Shinichi Takagi. "Comprehensive understanding of surface roughness and Coulomb scattering mobility in biaxially-strained Si MOSFETs." In 2008 IEEE International Electron Devices Meeting (IEDM). IEEE, 2008. http://dx.doi.org/10.1109/iedm.2008.4796755.

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N. Chen, W. P., P. Su, and K. Goto. "A Comprehensive Study of Coulomb Scattering Mobility in Short-Channel Process-Induced Strain NMOSFETs." In 2008 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 2008. http://dx.doi.org/10.7567/ssdm.2008.b-6-4.

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Yang, J., Z. Xia, G. Du, X. Liu, R. Han, and J. Kang. "Coulomb Scattering induced mobility degradation in Ultrathin-body SOI MOSFETs with high-k gate stack." In 2006 8th International Conference on Solid-State and Integrated Circuit Technology Proceedings. IEEE, 2006. http://dx.doi.org/10.1109/icsict.2006.306146.

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Takahashi, N., A. Aki, T. Ukai, Y. Nakajima, T. Maekawa, and T. Hanajiri. "Electrophoretic mobility and resultant zeta potential of an individual cell analyzed by electrophoretic coulter method." In 2009 International Semiconductor Device Research Symposium (ISDRS 2009). IEEE, 2009. http://dx.doi.org/10.1109/isdrs.2009.5378234.

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Oka, Hiroshi, Takumi Inaba, Shota Iizuka, Hidehiro Asai, Kimihiko Kato, and Takahiro Mori. "Effect of Conduction Band Edge States on Coulomb-Limiting Electron Mobility in Cryogenic MOSFET Operation." In 2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits). IEEE, 2022. http://dx.doi.org/10.1109/vlsitechnologyandcir46769.2022.9830505.

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Zhang, Xianle, Pengying Chang, Gang Du, and Xiaoyan Liu. "Impacts of Remote Coulomb Scattering on Hole Mobility in Si p-MOSFFETs at Cryogenic Temperatures." In 2019 Silicon Nanoelectronics Workshop (SNW). IEEE, 2019. http://dx.doi.org/10.23919/snw.2019.8782899.

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