Journal articles: 'Coupling spin-valley'

1

Morpurgo, Alberto F. "Gate control of spin-valley coupling." Nature Physics 9, no. 9 (July 28, 2013): 532–33. http://dx.doi.org/10.1038/nphys2706.

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Ji, Yanli, Xiaocha Wang, and Wenbo Mi. "Spin–orbit coupling induced spin polarized valley states in SrRuO3/BiIrO3 heterostructures." Physical Chemistry Chemical Physics 20, no. 38 (2018): 24768–74. http://dx.doi.org/10.1039/c8cp04336a.

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The valley polarization in SrRuO₃ and BiIrO₃ can be achieved with spin–orbit coupling, and tuning the Fermi level to the VBM can induce longitudinal transport with both spin and valley polarizations in SrRuO₃.

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3

Mekonnen, Sintayehu, and Pooran Singh. "Dopant Introduced Valley Polarization, Spin, and Valley Hall Conductivity in Doped Monolayer MoS2." Advances in Condensed Matter Physics 2018 (August 1, 2018): 1–7. http://dx.doi.org/10.1155/2018/1303816.

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We study valley polarization, spin, and valley Hall conductivity in doped monolayer MoS2 considering dopant introduced magnetic exchange field using low energy effective Hamiltonian. We found that dopant introduced magnetic exchange field breaks the time inversion symmetry and decouples the energetically degenerated valleys into nondegenerate. Moreover, the calculated result reveals that, at low temperature, in insulating regime, anomalous Hall conductivity in a single valley and the total valley Hall conductivity are quantized, whereas the total spin Hall conductivity vanishes identically. We also found that the strength of the spin-orbit coupling together with the exchange field determines the valley polarization, which in turn controls valley and spin Hall conductivity in doped monolayer MoS2 system. The spin Hall and valley Hall conductivity is dissipationless in the absence of any external magnetic field. Therefore, our results are crucial to generate low power electronics devices.

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Ai, Haoqiang, Di Liu, Jiazhong Geng, Shuangpeng Wang, Kin Ho Lo, and Hui Pan. "Theoretical evidence of the spin–valley coupling and valley polarization in two-dimensional MoSi2X4 (X = N, P, and As)." Physical Chemistry Chemical Physics 23, no. 4 (2021): 3144–51. http://dx.doi.org/10.1039/d0cp05926a.

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Li, Shuo, Junjie He, Lukáš Grajciar, and Petr Nachtigall. "Intrinsic valley polarization in 2D magnetic MXenes: surface engineering induced spin-valley coupling." Journal of Materials Chemistry C 9, no. 34 (2021): 11132–41. http://dx.doi.org/10.1039/d1tc02837e.

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Ildarabadi, Fereshte, and Rouhollah Farghadan. "Fully spin-valley-polarized current induced by electric field in zigzag stanene and germanene nanoribbons." Physical Chemistry Chemical Physics 23, no. 10 (2021): 6084–90. http://dx.doi.org/10.1039/d0cp05951j.

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Fully spin-valley-polarized current can be produced in zigzag stanene and germanene nanoribbons with large intrinsic spin–orbit coupling, considering the electron–electron interaction (U) and the external electric field (E_z) at room temperature.

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7

Chen, Liang. "Hall effects in monolayer MoS2 with spin-orbit coupling under the shining of a circularly polarized light." Modern Physics Letters B 34, no. 16 (March 31, 2020): 2050181. http://dx.doi.org/10.1142/s021798492050181x.

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In this paper, we study Hall effects of the monolayer MoS2 with Rashba and Ising spin-orbit coupling (SOC) under the application of a circularly polarized light. The Chern number and spin textures at high frequency regime are studied based on the Floquet theory. We found that the SOCs induced valley Hall effect. The sign of Chern numbers at high frequency regime can be reversed by engineering interplay between Ising SOC and light intensity. The system undergoes a topological phase transition from valley Hall state to anomalous Hall state. By analyzing the spin texture, we study the origin of the Hall effects.

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Shen, K., J. Y. Fu, and M. W. Wu. "Spin–orbit coupling and -factor of -valley in cubic GaN." Solid State Communications 151, no. 24 (December 2011): 1924–26. http://dx.doi.org/10.1016/j.ssc.2011.09.019.

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9

Gong, Su-Hyun, Filippo Alpeggiani, Beniamino Sciacca, Erik C. Garnett, and L. Kuipers. "Nanoscale chiral valley-photon interface through optical spin-orbit coupling." Science 359, no. 6374 (January 25, 2018): 443–47. http://dx.doi.org/10.1126/science.aan8010.

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10

WANG, W., M. H. ZHANG, H. LI, and J. CHENG. "TIGHT-BINDING BAND STRUCTURE AND SPIN-ORBIT SPLITTING FOR BULK InP." Modern Physics Letters B 24, no. 28 (November 10, 2010): 2815–20. http://dx.doi.org/10.1142/s0217984910025073.

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The band structure of InP is excellently produced using sp3d5s* tight-binding model. The spin-orbit splitting in the whole Brillouin zone derived from the InP Γ-valley of the lowest electronic subband, heavy hole, light hole and split-off hole is calculated. Considering the hot electron effect, the cases of L and X-valleys for the lowest electronic subband are also discussed. We then further present the electron spin-orbit coupling coefficient around the corresponding valley bottom. Our results should provide a promising direction for future research on spintronics.

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11

Ye, P., R. Y. Yuan, X. Zhao, and Y. Guo. "Electric controlled spin and valley transport of massive electrons in graphene with spin-orbit coupling." Journal of Applied Physics 121, no. 14 (April 14, 2017): 144302. http://dx.doi.org/10.1063/1.4980109.

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12

Glazov, M. M., and E. L. Ivchenko. "Valley Orientation of Electrons and Excitons in Atomically Thin Transition Metal Dichalcogenide Monolayers (Brief Review)." JETP Letters 113, no. 1 (January 2021): 7–17. http://dx.doi.org/10.1134/s0021364021010033.

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The main aspects of physical phenomena associated with the optical orientation of the spin and valley degrees of freedom in transition metal dichalcogenide monolayers and in van der Waals heterostructures based on them have been briefly reviewed. Owing to features of the band structure and spin–orbit coupling in such systems, circularly polarized light induces optical transitions in different valleys K+ and K– of the Brillouin zone; consequently, the optical orientation of charge carriers and excitons is accompanied by their valley polarization. The main features of the band structure of transition metal dichalcogenide monolayers, excitonic effects, and results of theoretical studies of the valley orientation of excitons and electrons at one-photon absorption have been reported. The linear–circular dichroism and valley orientation of free charge carriers and excitons at multiphoton absorption have been studied. Effects associated with the trigonal symmetry of monolayers, including the inversion of valley polarization at two-photon transitions and the second harmonic generation, have been discussed. The considered theoretical models have been illustrated by experimental data.

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13

Chen, Peigang, Tsz Wing Lo, Yulong Fan, Shubo Wang, Haitao Huang, and Dangyuan Lei. "Chiral Coupling of Valley Excitons and Light through Photonic Spin–Orbit Interactions." Advanced Optical Materials 8, no. 5 (November 20, 2019): 1901233. http://dx.doi.org/10.1002/adom.201901233.

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14

Bussolotti, Fabio, Zheng Zhang, Hiroyo Kawai, and Kuan Eng Johnson Goh. "A Lab-scale Spin and Angular Resolved Photoemission Spectroscopy Capability for 2D Valleytronics." MRS Advances 2, no. 29 (December 19, 2016): 1527–32. http://dx.doi.org/10.1557/adv.2016.626.

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ABSTRACTWe report on the establishment of a new lab-scale experimental capability for Spin and Angular Resolved Photoemission Spectroscopy (SARPES) for the study of valleytronics related materials. The ARPES capabilities of the system were demonstrated by measurement on gold [Au(111)] and molybdenum disulphide (MoS2) single crystals and the full functionality of the spin detector was also verified. Experimental results are compared with theoretical modeling by ab-initio band structure calculations. We discuss the potential scope of measurement that this experimental setup affords for investigating spin-related properties (e.g. spin-orbit coupling, valley transport, etc.) in layered materials.

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15

Vosoughi-nia, Sakineh, Gholamreza Rashedi, Yaser Hajati, and Hai Li. "Perfect valley and spin polarizations in a superlattice of ferromagnetic gapped graphene with spin-orbit coupling." Journal of Magnetism and Magnetic Materials 488 (October 2019): 165329. http://dx.doi.org/10.1016/j.jmmm.2019.165329.

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16

Yarmohammadi, Mohsen. "The effect of Rashba spin–orbit coupling on the spin- and valley-dependent electronic heat capacity of silicene." RSC Advances 7, no. 18 (2017): 10650–59. http://dx.doi.org/10.1039/c6ra26339a.

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In this work, we have investigated the effect of an electric field and Rashba spin–orbit coupling on the electronic band structure and electronic heat capacity of a ferromagnetic silicene material in three phases at Dirac points.

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17

Zhang, Kai, Lu Wang, and Xiaojun Wu. "Spin polarization and tunable valley degeneracy in a MoS2 monolayer via proximity coupling to a Cr2O3 substrate." Nanoscale 11, no. 41 (2019): 19536–42. http://dx.doi.org/10.1039/c9nr05698j.

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A first-principles study demonstrates that spin polarization and tunable valley degeneracy can be induced in the MoS₂ monolayer on a Cr₂O₃ substrate via the magnetic proximity effect.

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18

Hsu, Wei-Ting, Bo-Han Lin, Li-Syuan Lu, Ming-Hao Lee, Ming-Wen Chu, Lain-Jong Li, Wang Yao, Wen-Hao Chang, and Chih-Kang Shih. "Tailoring excitonic states of van der Waals bilayers through stacking configuration, band alignment, and valley spin." Science Advances 5, no. 12 (December 20, 2019): eaax7407. http://dx.doi.org/10.1126/sciadv.aax7407.

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Excitons in monolayer semiconductors have a large optical transition dipole for strong coupling with light. Interlayer excitons in heterobilayers feature a large electric dipole that enables strong coupling with an electric field and exciton-exciton interaction at the cost of a small optical dipole. We demonstrate the ability to create a new class of excitons in hetero- and homobilayers that combines advantages of monolayer and interlayer excitons, i.e., featuring both large optical and electric dipoles. These excitons consist of an electron confined in an individual layer, and a hole extended in both layers, where the carrier-species–dependent layer hybridization can be controlled through rotational, translational, band offset, and valley-spin degrees of freedom. We observe different species of layer-hybridized valley excitons, which can be used for realizing strongly interacting polaritonic gases and optical quantum controls of bidirectional interlayer carrier transfer.

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19

Chervy, Thibault, Stefano Azzini, Etienne Lorchat, Shaojun Wang, Yuri Gorodetski, James A. Hutchison, Stéphane Berciaud, Thomas W. Ebbesen, and Cyriaque Genet. "Room Temperature Chiral Coupling of Valley Excitons with Spin-Momentum Locked Surface Plasmons." ACS Photonics 5, no. 4 (January 25, 2018): 1281–87. http://dx.doi.org/10.1021/acsphotonics.7b01032.

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20

Hanbicki, A. T., K. M. McCreary, G. Kioseoglou, M. Currie, C. S. Hellberg, A. L. Friedman, and B. T. Jonker. "High room temperature optical polarization due to spin-valley coupling in monolayer WS2." AIP Advances 6, no. 5 (May 2016): 055804. http://dx.doi.org/10.1063/1.4942797.

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21

Pei, Qi, Xiaocha Wang, Jijun Zou, and Wenbo Mi. "Half-metallicity and spin-valley coupling in 5d transition metal substituted monolayer MnPSe3." Journal of Materials Chemistry C 6, no. 30 (2018): 8092–98. http://dx.doi.org/10.1039/c8tc02443j.

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22

Lin, Liangxu, Yaoxian Xu, Shaowei Zhang, Ian M. Ross, Albert C. M. Ong, and Dan A. Allwood. "Fabrication of Luminescent Monolayered Tungsten Dichalcogenides Quantum Dots with Giant Spin-Valley Coupling." ACS Nano 7, no. 9 (September 3, 2013): 8214–23. http://dx.doi.org/10.1021/nn403682r.

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23

Sun, Jia-Tao, Zhengfei Wang, S. Meng, Shixuan Du, F. Liu, and H.-J. Gao. "Spin-polarized valley Hall effect in ultrathin silicon nanomembrane via interlayer antiferromagnetic coupling." 2D Materials 3, no. 3 (September 14, 2016): 035026. http://dx.doi.org/10.1088/2053-1583/3/3/035026.

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24

Lin, Yifeng, Changcheng Zhang, Lixiu Guan, Zhipeng Sun, and Junguang Tao. "The Magnetic Proximity Effect Induced Large Valley Splitting in 2D InSe/FeI2 Heterostructures." Nanomaterials 10, no. 9 (August 21, 2020): 1642. http://dx.doi.org/10.3390/nano10091642.

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The manipulation of valley splitting has potential applications in valleytronics, which lacks in pristine two-dimensional (2D) InSe. Here, we demonstrate that valley physics in InSe can be activated via the magnetic proximity effect exerted by ferromagnetic FeI2 substrate with spin-orbit coupling. The valley splitting energy can reach 48 meV, corresponding to a magnetic exchange field of ~800 T. The system also presents magnetic anisotropy behavior with its easy magnetization axis tunable from in-plane to out-of-plane by the stacking configurations and biaxial tensile strain. The d-orbital-resolved magnetic anisotropic energy contributions indicate that the tensile strain effect arises from the increase of hybridization between minority Fe dxy and dx2−y2 states. Our results reveal that the magnetic proximity effect is an effective approach to stimulate the valley properties in InSe to extend its spintronic applications, which is expected to be feasible in other group-III monochalcogenides.

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25

Hasanirok, Kobra, and Hakimeh Mohammadpour. "The role of Rashba spin-orbit coupling in valley-dependent transport of Dirac fermions." Physica B: Condensed Matter 504 (January 2017): 52–57. http://dx.doi.org/10.1016/j.physb.2016.09.004.

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26

Zhu, Bairen, Hualing Zeng, Junfeng Dai, and Xiaodong Cui. "The Study of Spin-Valley Coupling in Atomically Thin Group VI Transition Metal Dichalcogenides." Advanced Materials 26, no. 31 (April 6, 2014): 5504–7. http://dx.doi.org/10.1002/adma.201305367.

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27

Zhang, Kaiyu, Lin Fu, Weili Zhang, Hongzhe Pan, Yuanyuan Sun, Chuannan Ge, Youwei Du, and Nujiang Tang. "Ultrasmall and Monolayered Tungsten Dichalcogenide Quantum Dots with Giant Spin–Valley Coupling and Purple Luminescence." ACS Omega 3, no. 9 (September 28, 2018): 12188–94. http://dx.doi.org/10.1021/acsomega.8b01125.

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28

Ezhevskii, Alexander A., Sergey A. Popkov, Andrey V. Soukhorukov, Davud V. Guseinov, Anton A. Konakov, Nikolay V. Abrosimov, and Helge Riemann. "Monoisotopic ²⁸Si in Spin Resonance Spectroscopy of Electrons Localized on Shallow Donors." Solid State Phenomena 205-206 (October 2013): 191–200. http://dx.doi.org/10.4028/www.scientific.net/ssp.205-206.191.

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The inverted structure of the 1s ground state of lithium in silicon provides a unique opportunity to study inter-valley spin-orbit interactions of donor electrons. A study of lithium doped silicon enriched in the 28Si isotope with a low oxygen content (N 21014 cm3) has demonstrated at low temperatures (T = 3.8 K) a family of electron spin resonance (ESR) spectra with anisotropic g factors associated with Li donor centres. The spectra were investigated without and with application of external stress to the sample and their g factors were found to be less then 2.000. The analysis of experimental data and numerical simulation of the spectra and their angular dependencies in the second order perturbation theory assuming the splitting of states due to internal strains in the crystal is larger than the Zeeman and spin-orbit splitting have shown that the spectrum, having g tensor components corresponding to the tetragonal symmetry, consists of two lines belonging to the triplet state T2, and the other two lines in the spectrum have an angular dependence behaviour of the doublet states E. The ratio of the inter-valley spin-orbit coupling λ and λ' to the Δ parameters, characterizing the splitting of the states under internal strains have been defined. From the dependencies of the triplet ESR lines intensity on the compressive stress of the crystal along the [11 it was obtained the value of the internal strains, which allowed to determine the parameters of the spin-orbit coupling λ and λ'. Their values were found to be three orders of magnitude smaller than were obtained earlier for Li spectra with g > 2. Since experimentally observed Δ value was of the order of the Zeeman splitting parameter the spectra were analyzed using the full matrix of the spin Hamiltonian for the fivefold degenerate ground state. We found that angular dependencies of the spectra observed for the triplet and doublet states with g < 2 are well described by the solutions of the spin Hamiltonian with parameters λ and λ' obtained from our experimental data. At the same time, we are not able to find solutions that satisfy the data obtained for the spectra with g > 2.000 in previous studies.

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29

Yang, Mou, Rui-Qiang Wang, and Yan-Kui Bai. "Valley detection using a graphene gradual pn junction with spin–orbit coupling: An analytical conductance calculation." Physics Letters A 379, no. 30-31 (September 2015): 1732–36. http://dx.doi.org/10.1016/j.physleta.2015.04.043.

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30

Goswami, Partha. "Optical properties of uniaxially strained graphene on transition metal dichalcogenide substrate." International Journal of Modern Physics B 32, no. 13 (May 11, 2018): 1850164. http://dx.doi.org/10.1142/s0217979218501643.

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The uniaxially strained graphene monolayer on transition metal dichalcogenide (GrTMD) substrate, constituting a van der Waals heterostructure (vdWH), is found to possess unusual intra-band plasmon dispersion ([Formula: see text]) with stronger incarceration compared to that of a standalone, doped graphene for finite doping in the long wavelength limit. The intra-band absorbance of GrTMD is found to be an increasing (decreasing) function of the strain field (frequency) at a given frequency (strain field). It is also observed that whereas the strain field is responsible for the valley polarization, a Rashba coupling-dependent pseudo Zeeman term arising due to the interplay of substrate-induced interactions is found to bring about the spin degeneracy lifting and the gate voltage tunable spin polarization. The latter turns out to be inversely proportional to the square root of the carrier concentration.

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31

Mao, Xiujuan, Jia Li, Congcong Li, Ze Liu, Sukai Teng, Xiuting Xu, Yang Liu, and Fuxing Yin. "Biaxial strain induced band transition and valley–spin coupling in the ferromagnetic semiconducting WSe2/1T-FeCl2 heterostructure." Journal of Materials Chemistry C 7, no. 30 (2019): 9398–405. http://dx.doi.org/10.1039/c9tc01988j.

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32

Dou, Kaiying, Yandong Ma, Rui Peng, Wenhui Du, Baibiao Huang, and Ying Dai. "Promising valleytronic materials with strong spin-valley coupling in two-dimensional MN2X2 (M = Mo, W; X = F, H)." Applied Physics Letters 117, no. 17 (October 26, 2020): 172405. http://dx.doi.org/10.1063/5.0026033.

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33

Zhao, X. N., W. Xu, Y. M. Xiao, and B. Van Duppen. "Spin polarization in monolayer MoS2 in the presence of proximity-induced interactions." International Journal of Modern Physics C 31, no. 10 (September 9, 2020): 2050143. http://dx.doi.org/10.1142/s0129183120501430.

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When monolayer (ML) MoS2 is placed on a substrate, the proximity-induced interactions such as the Rashba spin-orbit coupling (RSOC) and exchange interaction (EI) can be introduced. Thus, the electronic system can behave like a spintronic device. In this study, we present a theoretical study on how the presence of the RSCO and EI can lead to the band splitting, the lifting of the valley degeneracy and to the spin polarization in [Formula: see text]- and [Formula: see text]-type ML MoS2. We find that the maxima of the in-plane spin orientation in the conduction and valence bands in ML MoS2 depend on the Rashba parameter and the effective Zeeman field factor. At a fixed Rashba parameter, the minima of the split conduction band and the maxima of the split valence band along with the spin polarization in ML MoS2 can be tuned effectively by varying the effective Zeeman field factor. On the basis that the EI can be induced by placing the ML MoS2 on a ferromagnetic substrate or by magnetic doping in ML MoS2, we predict that the interesting spintronic effects can be observed in [Formula: see text]- and [Formula: see text]-type ML MoS2. This work can be helpful to gain an in-depth understanding of the basic physical properties of ML MoS2 for application in advanced electronic and optoelectronic devices.

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Khan, M. A., and Michael N. Leuenberger. "Optoelectronics with single layer group-VIB transition metal dichalcogenides." Nanophotonics 7, no. 10 (September 15, 2018): 1589–600. http://dx.doi.org/10.1515/nanoph-2018-0041.

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AbstractThe discovery of two-dimensional (2D) materials has opened up new frontiers and challenges for exploring fundamental research. Recently, single-layer (SL) transition metal dichalcogenides (TMDCs) have emerged as candidate materials for electronic and optoelectronic applications. In contrast to graphene, SL TMDCs have sizable band gaps that change from indirect to direct in SLs, which is useful in making thinner and more efficient electronic devices, such as transistors, photodetectors, and electroluminescent devices. In addition, SL TMDCs show strong spin-orbit coupling effects at the valence band edges, giving rise to the observation of valley-selective optical excitations. Here, we review the basic electronic and optical properties of pure and defected group-VIB SL TMDCs, with emphasis on the strong excitonic effects and their prospect for future optoelectronic devices.

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35

Hoi, Bui Dinh, Mohsen Yarmohammadi, and Houshang Araghi Kazzaz. "Spin- and valley-dependent electronic band structure and electronic heat capacity of ferromagnetic silicene in the presence of strain, exchange field and Rashba spin-orbit coupling." Journal of Magnetism and Magnetic Materials 439 (October 2017): 203–12. http://dx.doi.org/10.1016/j.jmmm.2017.04.092.

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36

Masuda, Hidetoshi, Hideaki Sakai, Masashi Tokunaga, Yuichi Yamasaki, Atsushi Miyake, Junichi Shiogai, Shintaro Nakamura, et al. "Quantum Hall effect in a bulk antiferromagnet EuMnBi2 with magnetically confined two-dimensional Dirac fermions." Science Advances 2, no. 1 (January 2016): e1501117. http://dx.doi.org/10.1126/sciadv.1501117.

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For the innovation of spintronic technologies, Dirac materials, in which low-energy excitation is described as relativistic Dirac fermions, are one of the most promising systems because of the fascinating magnetotransport associated with extremely high mobility. To incorporate Dirac fermions into spintronic applications, their quantum transport phenomena are desired to be manipulated to a large extent by magnetic order in a solid. We report a bulk half-integer quantum Hall effect in a layered antiferromagnet EuMnBi2, in which field-controllable Eu magnetic order significantly suppresses the interlayer coupling between the Bi layers with Dirac fermions. In addition to the high mobility of more than 10,000 cm2/V s, Landau level splittings presumably due to the lifting of spin and valley degeneracy are noticeable even in a bulk magnet. These results will pave a route to the engineering of magnetically functionalized Dirac materials.

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37

Mirzaei, M., T. Vazifehshenas, T. Salavati-fard, M. Farmanbar, and B. Tanatar. "Many-body effects due to the electron–electron interaction in silicene under an applied exchange field: The case of valley–spin coupling." Journal of Applied Physics 127, no. 5 (February 7, 2020): 054305. http://dx.doi.org/10.1063/1.5116786.

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38

Jadczak, Joanna, Joanna Kutrowska-Girzycka, Janina J. Schindler, Joerg Debus, Kenji Watanabe, Takashi Taniguchi, Ching-Hwa Ho, and Leszek Bryja. "Investigations of Electron-Electron and Interlayer Electron-Phonon Coupling in van der Waals hBN/WSe2/hBN Heterostructures by Photoluminescence Excitation Experiments." Materials 14, no. 2 (January 15, 2021): 399. http://dx.doi.org/10.3390/ma14020399.

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Monolayers of transition metal dichalcogenides (TMDs) with their unique physical properties are very promising for future applications in novel electronic devices. In TMDs monolayers, strong and opposite spin splittings of the energy gaps at the K points allow for exciting carriers with various combinations of valley and spin indices using circularly polarized light, which can further be used in spintronics and valleytronics. The physical properties of van der Waals heterostructures composed of TMDs monolayers and hexagonal boron nitride (hBN) layers significantly depend on different kinds of interactions. Here, we report on observing both a strong increase in the emission intensity as well as a preservation of the helicity of the excitation light in the emission from hBN/WSe2/hBN heterostructures related to interlayer electron-phonon coupling. In combined low-temperature (T = 7 K) reflectivity contrast and photoluminescence excitation experiments, we find that the increase in the emission intensity is attributed to a double resonance, where the laser excitation and the combined Raman mode A′1 (WSe2) + ZO (hBN) are in resonance with the excited (2s) and ground (1s) states of the A exciton in a WSe2 monolayer. In reference to the 2s state, our interpretation is in contrast with previous reports, in which this state has been attributed to the hybrid exciton state existing only in the hBN-encapsulated WSe2 monolayer. Moreover, we observe that the electron-phonon coupling also enhances the helicity preservation of the exciting light in the emission of all observed excitonic complexes. The highest helicity preservation of more than 60% is obtained in the emission of the neutral biexciton and negatively charged exciton (trion) in its triplet state. Additionally, to the best of our knowledge, the strongly intensified emission of the neutral biexciton XX0 at double resonance condition is observed for the first time.

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39

Goswami, Partha. "Fermions on the low-buckled honey-comb structured lattice plane and classical Casimir–Polder force." International Journal of Modern Physics B 30, no. 16 (June 23, 2016): 1650087. http://dx.doi.org/10.1142/s0217979216500879.

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We start with the well-known expression for the vacuum polarization and suitably modify it for 2[Formula: see text]1-dimensional spin–orbit coupled (SOC) fermions on the low-buckled honey-comb structured lattice plane described by the low-energy Liu–Yao–Feng–Ezawa (LYFE) model Hamiltonian involving the Dirac matrices in the chiral representation obeying the Clifford algebra. The silicene and germanene fit this description suitably. They have the Dirac cones similar to those of graphene and SOC is much stronger. The system could be normal or ferromagnetic in nature. The silicene turns into the latter type if there is exchange field arising due to the proximity coupling to a ferromagnet (FM) such as depositing Fe atoms to the silicene surface. For the silicene, we find that the many-body effects considerably change the bare Coulomb potential by way of the dependence of the Coulomb propagator on the real-spin, iso-spin and the potential due to an electric field applied perpendicular to the silicene plane. The computation aspect of the Casimir–Polder force (CPF) needs to be investigated in this paper. An important quantity in this process is the dielectric response function (DRF) of the material. The plasmon branch was obtained by finding the zeros of DRF in the long-wavelength limit. This leads to the plasmon frequencies. We find that the collective charge excitations at zero doping, i.e., intrinsic plasmons, in this system, are absent in the Dirac limit. The valley-spin-split intrinsic plasmons, however, come into being in the case of the massive Dirac particles with characteristic frequency close to 10 THz. Our scheme to calculate the Casimir–Polder interaction (CPI) of a micro-particle with a sheet involves replacing the dielectric constant of the sample in the CPI expression obtained on the basis of the Lifshitz theory by the static DRF obtained using the expressions for the polarization function we started with. Though the approach replaces a macroscopic constant by a microscopic quantity, it has the distinct advantage of the many-body effect inclusion seamlessly. We find the result that for the nontrivial susceptibility and polarizability values of the sheet and micro-particle, respectively, there is crossover between attractive and repulsive behavior. The transition depends only on these response functions apart from the ratio of the film thickness and the micro-particle separation ([Formula: see text]/[Formula: see text]) and temperature. Furthermore, there is a longitudinal electric field induced topological insulator (TI) to spin-valley-polarized metal (SVPM) transition in silicene, which is also referred to as the topological phase transition (TPT). The low-energy SVP carriers at TPT possess gapless (massless) and gapped (massive) energy spectra close to the two nodal points in the Brillouin zone with maximum spin-polarization. We find that the magnitude of the CPF at a given ratio of the film thickness and the separation between the micro-particle and the film are greater at TPT than at the TI and trivial insulator phases.

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40

Zou, Jianfei, Yinghan Yuan, and Jing Kang. "Spin and spin-valley Hall effects in a honeycomb lattice with antiferromagnetism and spin-orbit couplings." Physics Letters A 383, no. 25 (September 2019): 3162–66. http://dx.doi.org/10.1016/j.physleta.2019.07.001.

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41

Kondo, Masaki, Masayuki Ochi, Tatsuhiro Kojima, Ryosuke Kurihara, Daiki Sekine, Masakazu Matsubara, Atsushi Miyake, et al. "Tunable spin-valley coupling in layered polar Dirac metals." Communications Materials 2, no. 1 (May 14, 2021). http://dx.doi.org/10.1038/s43246-021-00152-z.

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AbstractIn non-centrosymmetric metals, spin-orbit coupling induces momentum-dependent spin polarization at the Fermi surfaces. This is exemplified by the valley-contrasting spin polarization in monolayer transition metal dichalcogenides with in-plane inversion asymmetry. However, the valley configuration of massive Dirac fermions in transition metal dichalcogenides is fixed by the graphene-like structure, which limits the variety of spin-valley coupling. Here, we show that the layered polar metal BaMnX2 (X = Bi, Sb) hosts tunable spin-valley-coupled Dirac fermions, which originate from the distorted X square net with in-plane lattice polarization. We found that BaMnBi2 has approximately one-tenth the lattice distortion of BaMnSb2, from which a different configuration of spin-polarized Dirac valleys is theoretically predicted. This was experimentally observed as a clear difference in the Shubnikov-de Haas oscillation at high fields between the two materials. The chemically tunable spin-valley coupling in BaMnX2 makes it a promising material for various spin-valleytronic devices.

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42

Wu, Qing-Ping, Zheng-Fang Liu, Ai-Xi Chen, Xian-Bo Xiao, and Zhi-Min Liu. "Full Valley and Spin Polarizations in Strained Graphene with Rashba Spin Orbit Coupling and Magnetic Barrier." Scientific Reports 6, no. 1 (February 22, 2016). http://dx.doi.org/10.1038/srep21590.

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Abstract We propose a graphene-based full valley- and spin-polarization device based on strained graphene with Rashba spin orbit coupling and magnetic barrier. The underlying mechanism is the coexistence of the valley and single spin band gaps in a certain Fermi energy. By aligning the Fermi energy in the valley and single spin band gaps, remarkable valley- and spin-polarization currents can be accessed.

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43

Banszerus, L., S. Möller, C. Steiner, E. Icking, S. Trellenkamp, F. Lentz, K. Watanabe, T. Taniguchi, C. Volk, and C. Stampfer. "Spin-valley coupling in single-electron bilayer graphene quantum dots." Nature Communications 12, no. 1 (September 2, 2021). http://dx.doi.org/10.1038/s41467-021-25498-3.

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AbstractUnderstanding how the electron spin is coupled to orbital degrees of freedom, such as a valley degree of freedom in solid-state systems, is central to applications in spin-based electronics and quantum computation. Recent developments in the preparation of electrostatically-confined quantum dots in gapped bilayer graphene (BLG) enable to study the low-energy single-electron spectra in BLG quantum dots, which is crucial for potential spin and spin-valley qubit operations. Here, we present the observation of the spin-valley coupling in bilayer graphene quantum dots in the single-electron regime. By making use of highly-tunable double quantum dot devices we achieve an energy resolution allowing us to resolve the lifting of the fourfold spin and valley degeneracy by a Kane-Mele type spin-orbit coupling of ≈ 60 μeV. Furthermore, we find an upper limit of a potentially disorder-induced mixing of the $$K$$ K and $$K^{\prime}$$ K ′ states below 20 μeV.

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44

Qu, Jinfeng, Xiangyang Peng, Di Xiao, and Jianxin Zhong. "Giant spin splitting, strong valley selective circular dichroism and valley-spin coupling induced in silicene." Physical Review B 94, no. 7 (August 15, 2016). http://dx.doi.org/10.1103/physrevb.94.075418.

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Sattari, Farhad, and Soghra Mirershadi. "Effect of the strain on spin-valley transport properties in MoS2 superlattice." Scientific Reports 11, no. 1 (September 2, 2021). http://dx.doi.org/10.1038/s41598-021-97189-4.

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AbstractThe effect of the strain on the spin and valley dependent transport properties, including the conductance and polarization, through a monolayer MoS2 superlattice under Rashba spin–orbit coupling is theoretically investigated. It is found that the conductance strongly depends on the spin and valley degrees of freedom, and spin-inversion can be achieved by MoS2 superlattice. Also, the spin and valley dependent conductance in a monolayer MoS2 superlattice can be efficiently adjusted via strain and the number of the superlattice barriers. Moreover, it is demonstrated that both the magnitude and sign of the spin and valley polarization depend on the strain strength, the number of barriers, and electrostatic barrier height. Both full spin and valley polarized current (with 100% or − 100% efficiency) can be realized in a MoS2 superlattice under strain.

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46

Li, Rui, Jiawei Jiang, Wenbo Mi, and Haili Bai. "Room temperature spontaneous valley polarization in two-dimensional FeClBr monolayer." Nanoscale, 2021. http://dx.doi.org/10.1039/d1nr04063d.

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47

Tian, Hongyu, ChongDan Ren, Benhu Zhou, Shaoyin Zhang, Weitao Lu, Yunfang Li, and Jing Liu. "Controllable Valley Polarization Using Silicene Double Line Defects Due to Rashba Spin-Orbit Coupling." Nanoscale Research Letters 14, no. 1 (November 27, 2019). http://dx.doi.org/10.1186/s11671-019-3196-3.

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AbstractWe theoretically investigate the valley polarization in silicene with two parallel line defects due to Rashba spin-orbit coupling (RSOC). It is found that as long as RSOC exceeds the intrinsic spin-orbit coupling (SOC), the transmission coefficients of the two valleys oscillate with the same periodicity and intensity, which consists of wide transmission peaks and zero-transmission plateaus. However, in the presence of a perpendicular electric field, the oscillation periodicity of the first valley increases, whereas that of the second valley shortens, generating the corresponding wide peak-zero plateau regions, where perfect valley polarization can be achieved. Moreover, the valley polarizability can be changed from 1 to −1 by controlling the strength of the electric field. Our findings establish a different route for generating valley-polarized current by purely electrical means and open the door for interesting applications of semiconductor valleytronics.

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48

"(Invited) Spin-Valley Coupling in Monolayer Transition Metal Dichalcogenides." ECS Meeting Abstracts, 2016. http://dx.doi.org/10.1149/ma2016-01/26/1317.

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49

Cui, Qirui, Yingmei Zhu, Jinghua Liang, Ping Cui, and Hongxin Yang. "Spin-valley coupling in a two-dimensional VSi2N4 monolayer." Physical Review B 103, no. 8 (February 15, 2021). http://dx.doi.org/10.1103/physrevb.103.085421.

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50

Dau, Minh Tuan, Céline Vergnaud, Alain Marty, Cyrille Beigné, Serge Gambarelli, Vincent Maurel, Timotée Journot, et al. "The valley Nernst effect in WSe2." Nature Communications 10, no. 1 (December 2019). http://dx.doi.org/10.1038/s41467-019-13590-8.

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AbstractThe Hall effect can be extended by inducing a temperature gradient in lieu of electric field that is known as the Nernst (-Ettingshausen) effect. The recently discovered spin Nernst effect in heavy metals continues to enrich the picture of Nernst effect-related phenomena. However, the collection would not be complete without mentioning the valley degree of freedom benchmarked by the valley Hall effect. Here we show the experimental evidence of its missing counterpart, the valley Nernst effect. Using millimeter-sized WSe$${}_{2}$$2 mono-multi-layers and the ferromagnetic resonance-spin pumping technique, we are able to apply a temperature gradient by off-centering the sample in the radio frequency cavity and address a single valley through spin-valley coupling. The combination of a temperature gradient and the valley polarization leads to the valley Nernst effect in WSe$${}_{2}$$2 that we detect electrically at room temperature. The valley Nernst coefficient is in good agreement with the predicted value.

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Journal articles on the topic 'Coupling spin-valley'

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