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Relevant bibliographies by topics / Cross-sectional scanning tunneling microscopy

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Academic literature on the topic 'Cross-sectional scanning tunneling microscopy'

Author: Grafiati

Published: 4 June 2021

Last updated: 4 February 2022

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Journal articles on the topic "Cross-sectional scanning tunneling microscopy"

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Yu, Edward T. "Cross-Sectional Scanning Tunneling Microscopy." Chemical Reviews 97, no. 4 (June 1997): 1017–44. http://dx.doi.org/10.1021/cr960084n.

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Yu, Edward T. "Cross-Sectional Scanning Tunneling Microscopy of Semiconductor Heterostructures." MRS Bulletin 22, no. 8 (August 1997): 22–26. http://dx.doi.org/10.1557/s0883769400033765.

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As characteristic dimensions in semiconductor devices continue to shrink and as advanced heterostructure devices increase in prominence, the ability to characterize structure and electronic properties in semiconductor materials and device structures at the atomic to nanometer scales has come to be of outstanding and immediate importance. Phenomena such as atomic-scale roughness of heterojunction interfaces, compositional ordering in semiconductor alloys, discreteness and spatial distribution of dopant atoms, and formation of self-assembled nanoscale structures can exert a profound influence on material properties and device behavior. The relationships between atomic-scale structure, epitaxial growth or processing conditions, and ultimately material properties and device behavior must be understood for realization and effective optimization of a wide range of semiconductor heterostructure and nanoscale devices.Cross-sectional scanning tunneling microscopy (STM) has emerged as a unique and powerful tool in the study of atomic-scale properties in III-V compound semiconductor heterostructures and of nanometer-scale structure and electronic properties in Si micro-electronic devices, offering unique capabilities for characterization that in conjunction with a variety of other, complementary experimental methods are providing new and important insights into material and device properties at the atomic to nanometer scale. In this article, we describe the basic experimental techniques involved in cross-sectional STM and give a few representative applications from our work that illustrate the ability, using cross-sectional STM in conjunction with other experimental techniques, to probe atomic-scale features in the structure of semiconductor heterojunctions and to correlate these features with epitaxial-growth conditions and device behavior.

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Johnson, M. B., and H. W. M. Salemink. "Cross-sectional scanning tunneling microscopy on semiconductor heterostructures." Materials Science and Engineering: B 24, no. 1-3 (May 1994): 213–17. http://dx.doi.org/10.1016/0921-5107(94)90330-1.

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Zuo, S. L., E. T. Yu, A. A. Allerman, and R. M. Biefeld. "Cross-sectional scanning tunneling microscopy of InAsSb/InAsP superlattices." Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 17, no. 4 (1999): 1781. http://dx.doi.org/10.1116/1.590826.

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Cobley, R. J., K. S. Teng, M. R. Brown, and S. P. Wilks. "Cross-sectional scanning tunneling microscopy of biased semiconductor lasers." Journal of Applied Physics 102, no. 2 (July 15, 2007): 024306. http://dx.doi.org/10.1063/1.2757006.

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Vaterlaus, A. "Cross-sectional scanning tunneling microscopy of epitaxial GaAs structures." Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 11, no. 4 (July 1993): 1502. http://dx.doi.org/10.1116/1.586959.

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Garleff, J. K., A. P. Wijnheijmer, and P. M. Koenraad. "Challenges in cross-sectional scanning tunneling microscopy on semiconductors." Semiconductor Science and Technology 26, no. 6 (March 29, 2011): 064001. http://dx.doi.org/10.1088/0268-1242/26/6/064001.

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COBLEY, R. J., K. S. TENG, M. R. BROWN, T. G. G. MAFFEÏS, and S. P. WILKS. "CROSS-SECTIONAL SCANNING TUNNELING MICROSCOPY OF BURIED HETEROSTRUCTURE LASERS." International Journal of Nanoscience 03, no. 04n05 (August 2004): 525–31. http://dx.doi.org/10.1142/s0219581x04002334.

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A single-mode buried heterostructure laser has been imaged using Cross-Sectional Scanning Tunneling Microscopy (X-STM). The problem of positioning the tip on the restricted active region on the (110) face has been overcome using combined Scanning Electron Microscopy (SEM). In order to understand the change in the STM scans when biased, particularly the physical change in surface step defects caused by commercial sample preparation, the experimental setup has been modified to allow the sample to be biased. A simpler double quantum well test structure has been biased and it has been demonstrated that it is possible to continue performing STM whilst the device is powered. The change in the relative contrast across the image has been shown to be unaffected by this external bias for the range scanned, as predicted by a fully-coupled Poison drift–diffusion model calculated using Fermi–Dirac statistics.

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Yu, EdwardT. "Cross-sectional scanning tunneling microscopy of mixed-anion semiconductor heterostructures." Micron 30, no. 1 (February 1999): 51–58. http://dx.doi.org/10.1016/s0968-4328(98)00042-0.

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Eisele, H., O. Flebbe, T. Kalka, C. Preinesberger, F. Heinrichsdorff, A. Krost, D. Bimberg, and M. Dähne-Prietsch. "Cross-sectional scanning-tunneling microscopy of stacked InAs quantum dots." Applied Physics Letters 75, no. 1 (July 5, 1999): 106–8. http://dx.doi.org/10.1063/1.124290.

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Dissertations / Theses on the topic "Cross-sectional scanning tunneling microscopy"

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Rybank, Stavros. "Cross-sectional scanning tunneling microscopy investigations of InGaSb/GaAs/GaP(001) nanostructures." Thesis, KTH, Tillämpad fysik, 2015. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-177995.

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Cobley, R. J. "Cross-sectional scanning tunnelling microscopy of biased laser structures." Thesis, Swansea University, 2006. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.636273.

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This work investigates Cross-Sectional Scanning Tunnelling Microscopy applied to semiconductor laser structures which are biased whilst they are being scanned. Images are presented as a function of sample bias. Increasing the sample bias removes the built-in band bending across the device and causes the horizontal topographic gradient of the scan to change. The p-type side of the sample is held at ground whilst the n-type side is biased. When tunnelling out of a double quantum well structure the topographic height of the n-type side increases by around 0.2nm at 1V. Tunnelling in to the structure, the height decreases by 0.02nm under low tunnelling current conditions. A tunnelling current model is developed which confirms these changes. Tunnelling in to a buried heterostructure device the apparent topographic height of the n-type side is again found to decrease, by over 2nm. Biased-dependent spectroscopic shifts are also observed with this device which are again confirmed by modelling. In both devices the apparent height of the quantum wells is found to increase by a factor of 2.5 to 4 times, at 1V sample bias. This is caused by the effects of tip-induced band bending being altered by the applied bias. An experimental and modelled example of a superlattice structure which displays contrast enhancement through tip-induced band bending is given. Several other device-specific physical and irreversible changes occur as a result of sample bias. These are well-suited to give characterisation information not available from other techniques.

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Reuterskiöld, Hedlund Carl, and Jokumsen Christopher Ernerheim. "Cross-Sectional Scanning Tunneling Microscopy Studies of In 1-xGax Sb/InAs Quantum Dots." Thesis, KTH, Skolan för informations- och kommunikationsteknik (ICT), 2012. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-101481.

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This thesis focuses on the characterization of In 0,4 Ga 0,6 Sb/InAs and InSb/InAs quantum dots using Cross-Sectional Scanning Tunneling Microscopy (X-STM). Quantum dots (QDs) are small and spatially confined semiconductor nanostructures with a size-dependent band gap. This property makes them very attractive for devices such as sensors, solar cells and lasers. The QDs analyzed in this thesis were grown using Metal-Organic Vapor Phase Epitaxy (MOVPE) and are meant to be utilized in long wavelength infrared (LWIR) (~8μm) detectors. To study buried QDs by X-STM, the sample has to be cleaved and measured in Ultra High Vacuum (UHV). In order to do this, a cleaving apparatus was built and installed on an STM system. A sample preparation methodology was worked out in order to make the samples ready for cleaving. An easy method for finding the QDs with the X-STM was also developed. Measurements resulted in a number of atomically resolved images, revealing the QD layer morphology. Furthermore, larger images were captured in order to study growth defects. Because of the high dot density, at low resolution the QDs were perceived as quantum wells. It was only at atomic resolution that QDs could be resolved. The observed dot sizes ranged between ~3 nm (InSb) and ~8 nm (In 0,4 Ga 0,6 Sb) in diameter.

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Kersell, Heath R. "Alternative Excitation Methods in Scanning Tunneling Microscopy." Ohio University / OhioLINK, 2015. http://rave.ohiolink.edu/etdc/view?acc_num=ohiou1449074449.

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Akanuma, Y., I. Yamakawa, Y. Sakuma, T. Usuki, and A. Nakamura. "Sharp Interfacial Structure of InAs/InP Quantum Dots Grown by a Double-Cap Method: A Cross-Sectional Scanning Tunneling Microscopy Study." American Institite of Physics, 2007. http://hdl.handle.net/2237/12037.

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Stohmann, Patrick [Verfasser]. "Investigation of Electron Irradiation-Induced Cross-Linking of p-Terphenyl Thiol Self-Assembled Monolayers on Au(111) by Scanning Tunneling Microscopy / Patrick Stohmann." Bielefeld : Universitätsbibliothek Bielefeld, 2020. http://d-nb.info/1214806562/34.

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Rooney, Aidan. "Characterisation of buried interfaces in van der Waals materials by cross sectional scanning transmission electron microscopy." Thesis, University of Manchester, 2017. https://www.research.manchester.ac.uk/portal/en/theses/characterisation-of-buried-interfaces-in-van-der-waals-materials-by-cross-sectional-scanning-transmission-electron-microscopy(dd5565b9-1709-4d28-b4ce-9cd675fb36eb).html.

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Graphene and other two-dimensional materials can be stacked together to form vander Waals heterostructures: synthetic crystals composed of different atomically thin layers with a bespoke electronic band structure. Structural characterisation of vander Waals heterostructures is difficult using conventional methods as the properties are almost entirely defined by the nature of the buried interfaces between dissimilar crystals. These methods also fall short of resolving the atomic structure of buried defects in van der Waals materials such as graphite. This work demonstrates the refinement and successful application of ion beam specimen preparation to produce cross sectional slices through these unique crystals so that they can be characterised by high resolution scanning transmission electron microscopy (STEM). Cross sectional specimen were prepared using in situ lift-out in a focused ion beam (FIB) dual-beam instrument. The fine polishing steps were optimised to prevent damage to the core of the specimen. High resolution STEM imaging of twin defects in graphene, hexagonal boron ni-tride and MoSe2 revealed that the boundaries are not atomically sharp but extended across many atoms. Advanced processing and analysis of these images uncovered fundamental mechanics which govern their geometry. This technique was further applied to complex transition metal dichalcogenide heterostructures to quantitatively determine the properties of buried interfaces between atomically thin crystals.

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Rosenthal, Paul Arthur. "Characterization of structural and electronic properties of nanoscale semiconductor device structures using cross-sectional scanning probe microscopy /." Diss., Connect to a 24 p. preview or request complete full text in PDF format. Access restricted to UC campuses, 2002. http://wwwlib.umi.com/cr/ucsd/fullcit?p3059906.

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Münnich, Gerhard [Verfasser], and Jascha [Akademischer Betreuer] Repp. "Cross-sectional scanning probe microscopy on GaAs: Tip-induced band bending, buried acceptors and adsorbed molecules / Gerhard Münnich. Betreuer: Jascha Repp." Regensburg : Universitätsbibliothek Regensburg, 2014. http://d-nb.info/1053555601/34.

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Johann, Victoria Anne. "Development and Implementation of an Automated SEM-EDX Routine for Characterizing Respirable Coal Mine Dust." Thesis, Virginia Tech, 2016. http://hdl.handle.net/10919/73367.

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This thesis describes the development and use of a computer-automated microscopy routine for characterization of respirable dust particles from coal mines. Respirable dust in underground coal mining environments has long been known to pose an occupational health hazard for miners. Typically following years of exposure, coal workers' pneumoconiosis (CWP) and silicosis are the most common disease diagnoses. Although dramatic reductions in CWP and silicosis cases were achieved across the US between about 1970-1999 through a combination of regulatory dust exposure limits, improved ventilation and dust abatement practices, a resurgence in disease incidence has been noted more recently – particularly in parts of Appalachia. To shed light on this alarming trend and allow for better understanding of the role of respirable dust in development of disease, more must be learned about the specific characteristics of dust particles and occupational exposures. This work first sought to develop an automated routine for the characterization of respirable dust using scanning electron microscopy with energy dispersive x-ray (SEM-EDX). SEM-EDX is a powerful tool that allows determination of the size, shape, and chemistry of individual particles, but manual operation of the instrument is very time consuming and has the potential to introduce user bias. The automated method developed here provides for much more efficient analysis – with a data capture rate that is typically 25 times faster than that of the manual method on which it was based – and also eliminates bias between users. Moreover, due to its efficiency and broader coverage of a dust sample, it allows for characterization of a larger and more representative number of particles per sample. The routine was verified using respirable dust samples generated from known materials commonly observed in underground coal mines in the central Appalachian region, as well as field samples collected in this region. This effort demonstrated that particles between about 1-9μm were accurately classified with respect to defined chemical categories, and suggested that analysis of 500 particles across a large area of a sample filter generally provides representative results. The automated SEM-EDX routine was then used to characterize a total of 210 respirable dust samples collected in eight Appalachian coal mines. The mines were located in three distinct regions (i.e., northern, mid-central and south-central Appalachia), which differed in terms of primary mining method, coal seam thickness and mining height, and coal and/or rock mineralogy. Results were analyzed to determine whether number distributions of particle size, aspect ratio, and chemistry classification vary between and within distinct mine regions, and by general sampling location categories (i.e., intake, feeder, production, return). Key findings include: 1) Northern Appalachian mines have relatively higher fractions of coal, carbonate, and heavy mineral particles than the two central Appalachian regions, whereas central Appalachian mines have higher fractions of quartz and alumino-silicate particles. 2) Central Appalachian mines tended to have more mine-to-mine variations in size, shape, and chemistry distributions than northern Appalachian mines. 3) With respect to particle size, samples collected in locations in the production and return categories have the highest percentages of very small particles (i.e., 0.94-2.0μm), followed by the feeder and then the intake locations. 4) With respect to particle shape, samples collected in locations in the production and return categories have higher fractions of particles with moderate (i.e., length is 1.5 to 3x width) to relatively high aspect ratios (i.e., length is greater than 3x width) compared to feeder and intake samples. 5) Samples with relatively high fractions of alumino-silicates have higher fractions of particles with moderate aspect ratios than samples with low alumino-silicate fractions. 6) Samples with relatively high fractions of quartz particles have higher fractions of particles with moderate aspect ratios and higher percentages of very small particles than samples with no identified quartz particles. 7) Samples with high fractions of carbonates have higher percentages of particles with relatively low aspect ratios (i.e., length and width are similar) than samples with no identified carbonate particles.
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Book chapters on the topic "Cross-sectional scanning tunneling microscopy"

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Garleff, J. K., J. M. Ulloa, and P. M. Koenraad. "Semiconductors Studied by Cross-sectional Scanning Tunneling Microscopy." In Scanning Probe Microscopy in Nanoscience and Nanotechnology 2, 321–53. Berlin, Heidelberg: Springer Berlin Heidelberg, 2010. http://dx.doi.org/10.1007/978-3-642-10497-8_11.

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Dähne, Mario, and Holger Eisele. "Cross-sectional Scanning Tunneling Microscopy at InAs Quantum Dots." In Nano-Optoelectronics, 117–33. Berlin, Heidelberg: Springer Berlin Heidelberg, 2002. http://dx.doi.org/10.1007/978-3-642-56149-8_5.

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Johnson, M. B., U. Maier, H. P. Meier, H. Salemink, E. T. Yu, and S. S. Iyer. "Atomic-Scale View of Epitaxial Layers with Cross-Sectional Scanning Tunneling Microscopy." In Semiconductor Interfaces at the Sub-Nanometer Scale, 207–16. Dordrecht: Springer Netherlands, 1993. http://dx.doi.org/10.1007/978-94-011-2034-0_22.

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Feenstra, R. M., A. Vaterlaus, E. T. Yu, P. D. Kirchner, C. L. Lin, J. M. Woodall, and G. D. Pettit. "Cross-Sectional Scanning Tunneling Microscopy of GaAs Doping Superlattices: Pinned vs. Unpinned Surfaces." In Semiconductor Interfaces at the Sub-Nanometer Scale, 127–37. Dordrecht: Springer Netherlands, 1993. http://dx.doi.org/10.1007/978-94-011-2034-0_14.

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Steinshnider, Jeremy D., Michael B. Weimer, and Mark C. Hanna. "Cross-Sectional Scanning Tunneling Microscopy as a Probe of Local Order in Semiconductor Alloys." In Spontaneous Ordering in Semiconductor Alloys, 273–82. Boston, MA: Springer US, 2002. http://dx.doi.org/10.1007/978-1-4615-0631-7_10.

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Tsuruoka, T., R. Tanimoto, N. Tachikawa, S. Ushioda, F. Matsukura, and H. Ohno. "Cross-sectional scanning tunneling microscope (STM) study of Mn-doped GaAs layers." In Springer Proceedings in Physics, 244–45. Berlin, Heidelberg: Springer Berlin Heidelberg, 2001. http://dx.doi.org/10.1007/978-3-642-59484-7_110.

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Shimizu, Kenichi, and Tomoaki Mitani. "Application Example 9: Cross-Sectional Examination of a Painted Steel." In New Horizons of Applied Scanning Electron Microscopy, 29–30. Berlin, Heidelberg: Springer Berlin Heidelberg, 2009. http://dx.doi.org/10.1007/978-3-642-03160-1_10.

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Shimizu, Kenichi, and Tomoaki Mitani. "Application Example 29: Cross-Sectional Examination of a Multilayered Glass." In New Horizons of Applied Scanning Electron Microscopy, 123–24. Berlin, Heidelberg: Springer Berlin Heidelberg, 2009. http://dx.doi.org/10.1007/978-3-642-03160-1_30.

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Shimizu, Kenichi, and Tomoaki Mitani. "Application Example 8: Cross-Sectional Examination of a Galvanized Steel." In New Horizons of Applied Scanning Electron Microscopy, 25–27. Berlin, Heidelberg: Springer Berlin Heidelberg, 2009. http://dx.doi.org/10.1007/978-3-642-03160-1_9.

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Shimizu, Kenichi, and Tomoaki Mitani. "Application Example 28: Cross-Sectional Examination of a Flash Memory Device." In New Horizons of Applied Scanning Electron Microscopy, 115–21. Berlin, Heidelberg: Springer Berlin Heidelberg, 2009. http://dx.doi.org/10.1007/978-3-642-03160-1_29.

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Conference papers on the topic "Cross-sectional scanning tunneling microscopy"

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Harnett, C. K., S. Evoy, H. G. Craighead, K. Pond, J. Kim, and A. Gossard. "Cross-sectional scanning tunneling microscopy of InGaAs quantum dots." In Technical Digest Summaries of papers presented at the Conference on Lasers and Electro-Optics Conference Edition. 1998 Technical Digest Series, Vol.6. IEEE, 1998. http://dx.doi.org/10.1109/cleo.1998.676123.

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Chien, TeYu, Nathan P. Guisinger, and John W. Freeland. "Cross-sectional scanning tunneling microscopy for complex oxide interfaces." In SPIE OPTO, edited by Ferechteh H. Teherani, David C. Look, and David J. Rogers. SPIE, 2011. http://dx.doi.org/10.1117/12.879329.

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Offermans, P. "Digital Alloy InGaAs/InAlAs Laser Structures Studied by Cross-Sectional Scanning Tunneling Micropscopy." In SCANNING TUNNELING MICROSCOPY/SPECTROSCOPY AND RELATED TECHNIQUES: 12th International Conference STM'03. AIP, 2003. http://dx.doi.org/10.1063/1.1639768.

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Yakunin, A. M. "Imaging of the (Mn2+3d5 + Hole) Complex in GaAs by Cross-Sectional Scanning Tunneling Microscopy." In SCANNING TUNNELING MICROSCOPY/SPECTROSCOPY AND RELATED TECHNIQUES: 12th International Conference STM'03. AIP, 2003. http://dx.doi.org/10.1063/1.1639764.

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Barzen, S., and A. C. Gallagher. "Profiling of cross-sectional a-Si:H solar cells using a scanning tunneling microscope." In National center for photovoltaics (NCPV) 15th program review meeting. AIP, 1999. http://dx.doi.org/10.1063/1.57975.

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NOZAKI, S., A. KOIZUMI, K. UCHIDA, and H. ONO. "InGaP/GaAs HETEROINTERFACES STUDIED BY CROSS-SECTIONAL SCANNING TUNNELING MICROSCOPY AND THEIR IMPACT ON THE DEVICE CHARACTERISTICS." In Proceedings of the International Conference on Nanomeeting 2009. WORLD SCIENTIFIC, 2009. http://dx.doi.org/10.1142/9789814280365_0003.

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Yamakawa, I., Y. Akanuma, W. S. Lee, T. Ujihara, Y. Takeda, and A. Nakamura. "Composition Profile of MOVPE Grown InP/InGaAs/InP Quantum Well Structures Studied by Cross-Sectional Scanning Tunneling Microscopy." In PHYSICS OF SEMICONDUCTORS: 28th International Conference on the Physics of Semiconductors - ICPS 2006. AIP, 2007. http://dx.doi.org/10.1063/1.2729798.

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Akanuma, Y., I. Yamakawa, Y. Sakuma, T. Usuki, and A. Nakamura. "Sharp Interfacial Structure of InAs/InP Quantum Dots Grown by a Double-Cap Method: A Cross-Sectional Scanning Tunneling Microscopy Study." In PHYSICS OF SEMICONDUCTORS: 28th International Conference on the Physics of Semiconductors - ICPS 2006. AIP, 2007. http://dx.doi.org/10.1063/1.2729793.

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Martyanov, Wjatscheslav, Ryan B. Lewis, Hendrik Janssen, Celina S. Schulze, Pascal Farin, Robert Zielinski, Andrea Lenz, Mario Dähne, Lutz Geelhaar, and Holger Eisele. "Investigation of Bi-induced three-dimensional InAs nanostructures on GaAs (110) by cross-sectional scanning tunnelling microscopy (Conference Presentation)." In Quantum Dots and Nanostructures: Growth, Characterization, and Modeling XVI, edited by Diana L. Huffaker and Holger Eisele. SPIE, 2019. http://dx.doi.org/10.1117/12.2507885.

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Zhao, Z. Y., W. M. Zhang, C. Yi, A. D. Stiff-Roberts, B. J. Rodriguez, and A. P. Baddorf. "Doping Characterization of InAs/GaAs Quantum Dot Heterostructure by Cross-Sectional Scanning Capacitance Microscopy." In LEOS 2007 - IEEE Lasers and Electro-Optics Society Annual Meeting. IEEE, 2007. http://dx.doi.org/10.1109/leos.2007.4382260.

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Reports on the topic "Cross-sectional scanning tunneling microscopy"

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Zheng, J. F., E. R. Weber, and M. B. Salmeron. Atomic scale interface structure of In{sub 0.2}Ga{sub 0.8}As/GaAs strained layers studied by cross-sectional scanning tunneling microscopy. Office of Scientific and Technical Information (OSTI), November 1993. http://dx.doi.org/10.2172/106626.

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Wu, Warren. Final Technical Report for JSEP Fellowship Executive Summary (Gross-Sectional Scanning/Tunneling Microscopy Investigations of Cleaned III-V Heterostructures). Fort Belvoir, VA: Defense Technical Information Center, December 1996. http://dx.doi.org/10.21236/ada319819.

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