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Relevant bibliographies by topics / Cross-sectional scanning tunneling spectroscopy

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Academic literature on the topic 'Cross-sectional scanning tunneling spectroscopy'

Author: Grafiati

Published: 4 June 2021

Last updated: 1 February 2022

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Journal articles on the topic "Cross-sectional scanning tunneling spectroscopy"

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GWO, Shangjr, and Hiroshi TOKUMOTO. "Cross-sectional Scanning Tunneling Microscopy and Spectroscopy of Compound Semiconductor Heterostructures." SHINKU 38, no. 12 (1995): 1009–19. http://dx.doi.org/10.3131/jvsj.38.1009.

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Dong, Y., R. M. Feenstra, M. P. Semtsiv, and W. T. Masselink. "Cross-sectional scanning tunneling microscopy and spectroscopy of InGaP/GaAs heterojunctions." Applied Physics Letters 84, no. 2 (January 12, 2004): 227–29. http://dx.doi.org/10.1063/1.1638637.

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Teuschler, Thomas, Martin Hundhausen, and Lothar Ley. "Cross-sectional scanning-tunneling-spectroscopy of a-Si:H pn-doping superlattices." Superlattices and Microstructures 16, no. 3 (January 1994): 271–74. http://dx.doi.org/10.1016/s0749-6036(09)80013-x.

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Gwo, S., A. R. Smith, K. ‐J Chao, C. K. Shih, K. Sadra, and B. G. Streetman. "Cross‐sectional scanning tunneling microscopy and spectroscopy of passivated III–V heterostructures." Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 12, no. 4 (July 1994): 2005–8. http://dx.doi.org/10.1116/1.578997.

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Cobley, R. J., K. S. Teng, T. G. G. Maffeïs, and S. P. Wilks. "Cross-sectional scanning tunneling microscopy and spectroscopy of strain in buried heterostructure lasers." Surface Science 600, no. 14 (July 2006): 2857–59. http://dx.doi.org/10.1016/j.susc.2006.05.024.

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Wang, Aaron, and TeYu Chien. "Perspectives of cross-sectional scanning tunneling microscopy and spectroscopy for complex oxide physics." Physics Letters A 382, no. 11 (March 2018): 739–48. http://dx.doi.org/10.1016/j.physleta.2018.01.016.

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Thibado, Paul M. "Cross-sectional scanning tunneling spectroscopy of cleaved, silicon-based metal–oxide–semiconductor junctions." Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 14, no. 3 (May 1996): 1607. http://dx.doi.org/10.1116/1.589199.

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Feenstra, R. M., E. T. Yu, J. M. Woodall, P. D. Kirchner, C. L. Lin, and G. D. Pettit. "Cross‐sectional imaging and spectroscopy of GaAs doping superlattices by scanning tunneling microscopy." Applied Physics Letters 61, no. 7 (August 17, 1992): 795–97. http://dx.doi.org/10.1063/1.107804.

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Eisele, H., S. Borisova, L. Ivanova, M. Dähne, and Ph Ebert. "Cross-sectional scanning tunneling microscopy and spectroscopy of nonpolar GaN(11¯00) surfaces." Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena 28, no. 4 (July 2010): C5G11—C5G18. http://dx.doi.org/10.1116/1.3456166.

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Kawasaki, Jason K., Rainer Timm, Trevor E. Buehl, Edvin Lundgren, Anders Mikkelsen, Arthur C. Gossard, and Chris J. Palmstrøm. "Cross-sectional scanning tunneling microscopy and spectroscopy of semimetallic ErAs nanostructures embedded in GaAs." Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena 29, no. 3 (May 2011): 03C104. http://dx.doi.org/10.1116/1.3547713.

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Dissertations / Theses on the topic "Cross-sectional scanning tunneling spectroscopy"

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Kersell, Heath R. "Alternative Excitation Methods in Scanning Tunneling Microscopy." Ohio University / OhioLINK, 2015. http://rave.ohiolink.edu/etdc/view?acc_num=ohiou1449074449.

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Rybank, Stavros. "Cross-sectional scanning tunneling microscopy investigations of InGaSb/GaAs/GaP(001) nanostructures." Thesis, KTH, Tillämpad fysik, 2015. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-177995.

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Reuterskiöld, Hedlund Carl, and Jokumsen Christopher Ernerheim. "Cross-Sectional Scanning Tunneling Microscopy Studies of In 1-xGax Sb/InAs Quantum Dots." Thesis, KTH, Skolan för informations- och kommunikationsteknik (ICT), 2012. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-101481.

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This thesis focuses on the characterization of In 0,4 Ga 0,6 Sb/InAs and InSb/InAs quantum dots using Cross-Sectional Scanning Tunneling Microscopy (X-STM). Quantum dots (QDs) are small and spatially confined semiconductor nanostructures with a size-dependent band gap. This property makes them very attractive for devices such as sensors, solar cells and lasers. The QDs analyzed in this thesis were grown using Metal-Organic Vapor Phase Epitaxy (MOVPE) and are meant to be utilized in long wavelength infrared (LWIR) (~8μm) detectors. To study buried QDs by X-STM, the sample has to be cleaved and measured in Ultra High Vacuum (UHV). In order to do this, a cleaving apparatus was built and installed on an STM system. A sample preparation methodology was worked out in order to make the samples ready for cleaving. An easy method for finding the QDs with the X-STM was also developed. Measurements resulted in a number of atomically resolved images, revealing the QD layer morphology. Furthermore, larger images were captured in order to study growth defects. Because of the high dot density, at low resolution the QDs were perceived as quantum wells. It was only at atomic resolution that QDs could be resolved. The observed dot sizes ranged between ~3 nm (InSb) and ~8 nm (In 0,4 Ga 0,6 Sb) in diameter.

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Akanuma, Y., I. Yamakawa, Y. Sakuma, T. Usuki, and A. Nakamura. "Sharp Interfacial Structure of InAs/InP Quantum Dots Grown by a Double-Cap Method: A Cross-Sectional Scanning Tunneling Microscopy Study." American Institite of Physics, 2007. http://hdl.handle.net/2237/12037.

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Lin, Yiping, and 林怡萍. "Theoretical Analysis of Cross-Sectional Scanning Tunneling Spectroscopy." Thesis, 1997. http://ndltd.ncl.edu.tw/handle/07826811475460555102.

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碩士
國立清華大學
物理學系
85
In this thesis we model cross-sectional scanning tunneling spectroscopy studies of semiconductor superlattice electronic structures by computing tunneling current-voltage characteristics from calculated superlattice layer-local density of states. We demonstrate our approach for a type-II InAs/GaSb superlattice, and compare it with known experimental data.

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Iffländer, Tim. "Electronic and Magnetic Properties of the Fe/GaAs(110) Interface." Doctoral thesis, 2015. http://hdl.handle.net/11858/00-1735-0000-0028-86DE-A.

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Yang, Shu-Ju, and 楊淑如. "cross-sectional scanning tunneling microscopy studies of polar surfaces of SrTiO3." Thesis, 2012. http://ndltd.ncl.edu.tw/handle/80380827508670097195.

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碩士
國立臺灣大學
物理學研究所
100
Aside from the bulk properties, interesting phenomena can be revealed in thin films of perovskite oxides, such as magnetoelectric switching effects in multiferroic BiFeO3 (BFO) films. Certain interesting perovskite surfaces (e.g., BFO(111)) normally pre- pared by methods such as pulsed laser deposition, but with a resulting morphology unsuitable for STM studies, can be made accessible by crystal cleavage. Instead of taking bottom-up way to get a surface, in this work, using the common substrate as our model system, we demonstrate the first observation of (110) polar surfaces of fractured Nb-doped SrTiO3 (Nb:STO) utilizing cross-sectional scanning tunneling microscopy (XSTM) at room temperature. A rich variety of surface morphologies have been observevd, but few are well characterised. Terraced STO(110) surfaces with two unit-cell height could be found by in situ cleaving. Comparing the results of atomically flat terraces with STO(100) non-polar surfaces, indicates the existence of polar instability on fractured STO(110) surfaces, in agreement with theoretical predictions. Future advances in understanding these surfaces will be accompanied by fracturing at low temperature.

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Book chapters on the topic "Cross-sectional scanning tunneling spectroscopy"

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Garleff, J. K., J. M. Ulloa, and P. M. Koenraad. "Semiconductors Studied by Cross-sectional Scanning Tunneling Microscopy." In Scanning Probe Microscopy in Nanoscience and Nanotechnology 2, 321–53. Berlin, Heidelberg: Springer Berlin Heidelberg, 2010. http://dx.doi.org/10.1007/978-3-642-10497-8_11.

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Dähne, Mario, and Holger Eisele. "Cross-sectional Scanning Tunneling Microscopy at InAs Quantum Dots." In Nano-Optoelectronics, 117–33. Berlin, Heidelberg: Springer Berlin Heidelberg, 2002. http://dx.doi.org/10.1007/978-3-642-56149-8_5.

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Johnson, M. B., U. Maier, H. P. Meier, H. Salemink, E. T. Yu, and S. S. Iyer. "Atomic-Scale View of Epitaxial Layers with Cross-Sectional Scanning Tunneling Microscopy." In Semiconductor Interfaces at the Sub-Nanometer Scale, 207–16. Dordrecht: Springer Netherlands, 1993. http://dx.doi.org/10.1007/978-94-011-2034-0_22.

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Tsuruoka, T., R. Tanimoto, N. Tachikawa, S. Ushioda, F. Matsukura, and H. Ohno. "Cross-sectional scanning tunneling microscope (STM) study of Mn-doped GaAs layers." In Springer Proceedings in Physics, 244–45. Berlin, Heidelberg: Springer Berlin Heidelberg, 2001. http://dx.doi.org/10.1007/978-3-642-59484-7_110.

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Feenstra, R. M., A. Vaterlaus, E. T. Yu, P. D. Kirchner, C. L. Lin, J. M. Woodall, and G. D. Pettit. "Cross-Sectional Scanning Tunneling Microscopy of GaAs Doping Superlattices: Pinned vs. Unpinned Surfaces." In Semiconductor Interfaces at the Sub-Nanometer Scale, 127–37. Dordrecht: Springer Netherlands, 1993. http://dx.doi.org/10.1007/978-94-011-2034-0_14.

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Steinshnider, Jeremy D., Michael B. Weimer, and Mark C. Hanna. "Cross-Sectional Scanning Tunneling Microscopy as a Probe of Local Order in Semiconductor Alloys." In Spontaneous Ordering in Semiconductor Alloys, 273–82. Boston, MA: Springer US, 2002. http://dx.doi.org/10.1007/978-1-4615-0631-7_10.

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Goldman, R. S. "Heterointerfaces: Characterization by Cross-sectional Scanning Tunneling Microscopy." In Encyclopedia of Materials: Science and Technology, 3752–60. Elsevier, 2001. http://dx.doi.org/10.1016/b0-08-043152-6/00670-7.

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Conference papers on the topic "Cross-sectional scanning tunneling spectroscopy"

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Offermans, P. "Digital Alloy InGaAs/InAlAs Laser Structures Studied by Cross-Sectional Scanning Tunneling Micropscopy." In SCANNING TUNNELING MICROSCOPY/SPECTROSCOPY AND RELATED TECHNIQUES: 12th International Conference STM'03. AIP, 2003. http://dx.doi.org/10.1063/1.1639768.

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Yakunin, A. M. "Imaging of the (Mn2+3d5 + Hole) Complex in GaAs by Cross-Sectional Scanning Tunneling Microscopy." In SCANNING TUNNELING MICROSCOPY/SPECTROSCOPY AND RELATED TECHNIQUES: 12th International Conference STM'03. AIP, 2003. http://dx.doi.org/10.1063/1.1639764.

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Suzuki, K., K. Kanisawa, K. Onomitsu, and K. Muraki. "Cross-sectional Low-temperature Scanning Tunneling Spectroscopy of a p-n Junction and an Inversion Layer in InAs." In 2009 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 2009. http://dx.doi.org/10.7567/ssdm.2009.k-5-4.

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Harnett, C. K., S. Evoy, H. G. Craighead, K. Pond, J. Kim, and A. Gossard. "Cross-sectional scanning tunneling microscopy of InGaAs quantum dots." In Technical Digest Summaries of papers presented at the Conference on Lasers and Electro-Optics Conference Edition. 1998 Technical Digest Series, Vol.6. IEEE, 1998. http://dx.doi.org/10.1109/cleo.1998.676123.

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Chien, TeYu, Nathan P. Guisinger, and John W. Freeland. "Cross-sectional scanning tunneling microscopy for complex oxide interfaces." In SPIE OPTO, edited by Ferechteh H. Teherani, David C. Look, and David J. Rogers. SPIE, 2011. http://dx.doi.org/10.1117/12.879329.

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Barzen, S., and A. C. Gallagher. "Profiling of cross-sectional a-Si:H solar cells using a scanning tunneling microscope." In National center for photovoltaics (NCPV) 15th program review meeting. AIP, 1999. http://dx.doi.org/10.1063/1.57975.

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NOZAKI, S., A. KOIZUMI, K. UCHIDA, and H. ONO. "InGaP/GaAs HETEROINTERFACES STUDIED BY CROSS-SECTIONAL SCANNING TUNNELING MICROSCOPY AND THEIR IMPACT ON THE DEVICE CHARACTERISTICS." In Proceedings of the International Conference on Nanomeeting 2009. WORLD SCIENTIFIC, 2009. http://dx.doi.org/10.1142/9789814280365_0003.

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Yamakawa, I., Y. Akanuma, W. S. Lee, T. Ujihara, Y. Takeda, and A. Nakamura. "Composition Profile of MOVPE Grown InP/InGaAs/InP Quantum Well Structures Studied by Cross-Sectional Scanning Tunneling Microscopy." In PHYSICS OF SEMICONDUCTORS: 28th International Conference on the Physics of Semiconductors - ICPS 2006. AIP, 2007. http://dx.doi.org/10.1063/1.2729798.

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Akanuma, Y., I. Yamakawa, Y. Sakuma, T. Usuki, and A. Nakamura. "Sharp Interfacial Structure of InAs/InP Quantum Dots Grown by a Double-Cap Method: A Cross-Sectional Scanning Tunneling Microscopy Study." In PHYSICS OF SEMICONDUCTORS: 28th International Conference on the Physics of Semiconductors - ICPS 2006. AIP, 2007. http://dx.doi.org/10.1063/1.2729793.

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Drevniok, Benedict, St John Dixon-Warren, Oskar Amster, Stuart L. Friedman, and Yongliang Yang. "Extending Electrical Scanning Probe Microscopy Measurements of Semiconductor Devices Using Microwave Impedance Microscopy." In ISTFA 2015. ASM International, 2015. http://dx.doi.org/10.31399/asm.cp.istfa2015p0082.

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Abstract Scanning microwave impedance microscopy was used to analyze a CMOS image sensor sample to reveal details of the dopant profiling in planar and cross-sectional samples. Sitespecific capacitance-voltage spectroscopy was performed on different regions of the samples.

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Reports on the topic "Cross-sectional scanning tunneling spectroscopy"

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Zheng, J. F., E. R. Weber, and M. B. Salmeron. Atomic scale interface structure of In{sub 0.2}Ga{sub 0.8}As/GaAs strained layers studied by cross-sectional scanning tunneling microscopy. Office of Scientific and Technical Information (OSTI), November 1993. http://dx.doi.org/10.2172/106626.

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