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Journal articles on the topic 'Crystal growth'

Author: Grafiati

Published: 4 June 2021

Last updated: 25 July 2025

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1

Gentile, A. L., and D. F. Elwell. "Crystal Growth." MRS Bulletin 13, no. 10 (1988): 23–28. http://dx.doi.org/10.1557/s0883769400064150.

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Crystal growth is a vital and fundamental part of materials science and engineering, since crystals of suitable size and perfection are required for fundamental data acquisition and for practical devices such as integrated circuits.The word “crystal” comes from the Greek and means “congealed by cold.” The term was originally applied to ice crystals and to crystalline quartz found in such locations as the Alps and thought, at one time, to be some permanently frozen form of water. As a crystallization process, crystal growth extends throughout recorded history—the crystallization of salt from se

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2

Zhou, Wuzong. "Reversed Crystal Growth." Crystals 9, no. 1 (2018): 7. http://dx.doi.org/10.3390/cryst9010007.

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In the last decade, a reversed growth route has been found in many crystal growth processes. In these systems, a single crystal does not develop from a single nucleus. The precursor molecules/ions or nanocrystallites aggregate into some large amorphous or polycrystalline particles. Multiple-nucleation on the surface of the amorphous particles or surface re-crystallization of the polycrystalline particles then takes place, forming a single crystal shell with a regular morphology. Finally, the crystallization extends from the surface to the core to form single crystals. This non-classical crysta

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3

Tian, Ruifeng, Mingyan Pan, Lu Zhang, and Hongji Qi. "Crystal growth and spectral properties of (Yb0.15Lu0.85xY0.85-0.85x)3Al5O12 single crystals." Chinese Optics Letters 20, no. 12 (2022): 121601. http://dx.doi.org/10.3788/col202220.121601.

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4

Nelson, J. "Growth-deviation model to understand the perceived variety of falling snow." Atmospheric Chemistry and Physics Discussions 8, no. 2 (2008): 4407–37. http://dx.doi.org/10.5194/acpd-8-4407-2008.

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Abstract. What is the source of snow-crystal variety? This question is answered using a model of snow-crystal growth in a cloud. In the model, crystals start under various initial cloud-crystal conditions, and then encounter growth perturbations from random air-temperature deviations along simple crystal trajectories. To obtain distributions of these deviations, I analyzed recent high-resolution measurements of cloud updrafts and temperatures. The trajectories and distributions are used to estimate the number of possible snow crystal shapes, to a given viewing resolution, from a range of initi

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5

K., Lilly Mary Eucharista, Krishnan C., and Selvarajan P. "STRUCTURAL, MECHANICAL, OPTICAL, THERMAL, ELECTRICAL STUDIES OF A NONLINEAR OPTICAL SINGLE CRYSTAL: GAMMA GLYCINE USING LITHIUM BROMIDE AS AN ADDITIVE." International Journal of Advanced Trends in Engineering and Technology 2, no. 2 (2017): 60–70. https://doi.org/10.5281/zenodo.846411.

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Single crystals of gamma glycine, an organic nonlinear optical material were grown by slow evaporation method from aqueous solutions of lithium bromide. Good optical quality single crystals were grown within a period of 3 weeks. The grown crystals were colorless and transparent. The solubility of the grown crystals has been estimated for various temperatures. The XRD study reveals that the grown crystal crystallizes in the hexagonal crystal system and corresponding lattice parameters were determined.The reflection planes of the sample were confirmed by the powder X-ray diffraction study and di

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6

Feigelson, Robert S. "Growth of Single Crystal Fibers." MRS Bulletin 13, no. 10 (1988): 47–55. http://dx.doi.org/10.1557/s0883769400064198.

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Single-crystal fibers represent perhaps one of the most underexplored areas of material science. Despite some early interest and excitement 30 years ago, the lack of immediate applications led to a decline in research activity, and until recently, little was known about their growth behavior and properties. During the past few years single-crystal fiber research has been revived and preliminary results have stimulated considerable interest in the scientific community.At present, the most extensive and broadly based single-crystal fiber program is at Stanford University, where the focus has bee

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7

Sato, T., K. Miyagawa, and K. Kanoda. "Electronic crystal growth." Science 357, no. 6358 (2017): 1378–81. http://dx.doi.org/10.1126/science.aal2426.

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Interacting atoms or molecules condense into liquid, and, when cooled further, they form a crystal. The time evolution of the atomic or molecular ordering has been widely studied as a nonequilibrium emergence of order from a supercooled liquid or a glass. Interacting electrons in a variety of correlated electron systems also form crystals, but observing the time evolution of electronic crystallization has been experimentally challenging. Here, working with an organic conductor exhibiting a supercooled charge liquid or charge glass as a metastable state, we observed electronic crystal growth th

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8

Wang, Xu, and Yongmin Zhou. "Research on Single Crystal Preparation via Dynamic Liquid Phase Method." Crystals 13, no. 7 (2023): 1150. http://dx.doi.org/10.3390/cryst13071150.

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Traditional liquid phase methods for growing single crystals are static growth methods, which include seed crystal sedimentation growth and seed crystal clamping growth using seed crystal holders. Single crystals grown via seed crystal sedimentation often have a flat and elongated shape, and the region in contact with the bottom of the container is restricted during growth, resulting in significant defects. Similarly, the seed crystal clamping growth method cannot avoid contact with external objects, leading to abnormal growth at the contact points and along the direction of the seed crystal h

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9

YANG Yao, LI Zaoyang, GAO Junhao, et al. "Effects of crystal rotation on SiC crystal growth by top-seeded solution growth method." Acta Physica Sinica 74, no. 15 (2025): 0. https://doi.org/10.7498/aps.74.20250595.

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The top-seeded solution growth (TSSG) method is a critical technique for growing low-defect and high-quality silicon carbide (SiC) single crystals. A comprehensive numerical analysis model including induction heating, heat and mass transfer was developed for the growth of 6-inch SiC single crystals. The coupling effects of Lorentz force, centrifugal force, thermal buoyancy force and surface tension on the solution flow were considered, and the effects of crystal rotation speed on the velocity field, temperature field, carbon concentration field, crystal growth rate and carbon dissolution and p

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10

Tsuge, Hiroshi, Shinya Sato, Masakazu Katsuno, Tatsuo Fujimoto, and Wataru Ohashi. "Growth of High Quality 4H-SiC Crystals in Controlled Temperature Distributions of Seed Crystals." Materials Science Forum 717-720 (May 2012): 13–16. http://dx.doi.org/10.4028/www.scientific.net/msf.717-720.13.

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Large diameter 4H-SiC single crystal wafers with higher quality are required to improve the yields of devices fabricated onto the SiC wafers. For crystal growths with higher quality, it is important to prepare seed crystals with lower defect densities. In particular, the edge part of the seed has to be prepared with considerable care because the crystallinity of the enlarged part of grown crystals depends much upon the surface condition of the seed crystal during radial expansion growth. We found that growth with fewer defect and micropipe densities, specifically at the periphery of the crysta

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11

Plomp, Marco, Alexander McPherson, and Alexander J. Malkin. "Crystal growth of macromolecular crystals: correlation between crystal symmetry and growth mechanisms." Journal of Crystal Growth 237-239 (April 2002): 306–11. http://dx.doi.org/10.1016/s0022-0248(01)01926-1.

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12

Fisher, John G., Su-Hyeon Sim, Trung Thành Ðoàn, Eugenie Uwiragiye, Jungwi Mok, and Junseong Lee. "Comparison of (K0.5Na0.5)NbO3 Single Crystals Grown by Seed-Free and Seeded Solid-State Single Crystal Growth." Materials 16, no. 10 (2023): 3638. http://dx.doi.org/10.3390/ma16103638.

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(K0.5Na0.5)NbO3-based piezoelectric ceramics are of interest as a lead-free replacement for Pb(Zr,Ti)O3. In recent years, single crystals of (K0.5Na0.5)NbO3 with improved properties have been grown by the seed-free solid-state crystal growth method, in which the base composition is doped with a specific amount of donor dopant, inducing a few grains to grow abnormally large and form single crystals. Our laboratory experienced difficulty obtaining repeatable single crystal growth using this method. To try and overcome this problem, single crystals of 0.985(K0.5Na0.5)NbO3-0.015Ba1.05Nb0.77O3 and

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13

Dinagaran, S., P. Srinivasan, P. Srinivasan, et al. "Growth and Characterization of Anthranilic acid Crystals." JOURNAL OF ADVANCES IN CHEMISTRY 12, no. 11 (2016): 4480–87. http://dx.doi.org/10.24297/jac.v12i11.823.

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ABSTRACTSingle crystals of Anthranilic acid (AA) have been successfully grown and purity of materials has been increased by repeated recrystallization process. Single crystals have been grown by slow evaporation technique. The grown crystal was characterized by Single crystal X-Ray diffraction, Powder XRD, FTIR, UV-Vis, DTA/TGA, Dielectric studies and SHG respectively. The observed results from various characterization show the suitability of NLO application. The second harmonic generation of the grown crystal was checked using Kurtz and Perry technique. Thermal stability and melting point of

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14

Danno, Katsunori, Satoshi Yamaguchi, Hiroyuki Kimoto, Kazuaki Sato, and Takeshi Bessho. "Trials of Solution Growth of Dislocation-Free 4H-SiC Bulk Crystals." Materials Science Forum 858 (May 2016): 19–22. http://dx.doi.org/10.4028/www.scientific.net/msf.858.19.

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Solution growth of high-quality 4H-SiC bulk crystals has been performed by using Si-Cr based melt at 2000°C. Through enlargement of crystal diameter which is controlled by meniscus height during growth, dislocation free area has been successfully obtained on the periphery of the crystal. However, the threading dislocations in the seed crystal have penetrated into the grown crystal and have been located around the center of the crystal. To reduce dislocation density in the grown crystals, we have used threading-dislocation-free seedcrystals prepared by solution growth on (1-100). The solution g

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15

Liu, Yao, Huilin He, and Yanjun Liu. "Morphology control of laser-induced dandelion-like crystals of sodium acetate through the addition of acidic polymers." Journal of Applied Crystallography 54, no. 4 (2021): 1111–20. http://dx.doi.org/10.1107/s1600576721005409.

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Crystal growth speeds, crystal sizes and the morphology of sodium acetate (CH3COONa) crystals in the presence of polymaleic acid and polyacrylic acid with different concentrations were investigated in supersaturated solutions of sodium acetate. The technique of non-photochemical laser-induced nucleation (NPLIN) was used to produce initial crystallites of anhydrous CH3COONa. The anhydrous CH3COONa crystal growth in solution after laser irradiation resembled the formation of dandelion seed heads. Even though NPLIN could offer temporal–spatial control of crystal nucleation without the addition of

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16

Adnan, Siti Zubaidah, and Noor Asma Fazli Abdul Samad. "Effects of Nucleation and Crystal Growth Rates on Crystal Size Distribution for Seeded Batch Potash Alum Crystallization Process." ASEAN Journal of Chemical Engineering 22, no. 2 (2022): 258. http://dx.doi.org/10.22146/ajche.74121.

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The driving force of the cooling crystallization process is supersaturation, where the supersaturation level during the crystallization process is crucial to grow the crystal sufficiently. Nucleation and crystal growth rates are two concurrent phenomena occurring during crystallization. Both are supersaturation functions that determine the growth of seed crystals and the formation of fine crystals. Trade-offs between nucleation and crystal growth are essential for achieving the large size of seed crystals with the minimum number of fine crystals. Thus, the objective of this study is to analyze

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17

Et.al, M. Vijayalakshmi. "Growth and Characterization of Potassium succinate crystal." Turkish Journal of Computer and Mathematics Education (TURCOMAT) 12, no. 6 (2021): 398–403. http://dx.doi.org/10.17762/turcomat.v12i6.1406.

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Potassium succinate single crystals with attractive optical property like non linearity were grown by proper synthesis. The crystal was grown by utilizing slow evaporation technique from the solution taking water as solvent. At room temperature the growth of crystal arises maintain constant rate of evaporation results in a formation of transparent crystals with high optical quality. Non volatile devices with high memory fabricated with ferroelectric materials observers the concentration of the researchers. Actually the ferroelectric materials have sufficient capability function as an actuator

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18

Kim, Tae Hyeon, Hee Tae Lee, Young-Min Kang, Gun-Eik Jang, In Hoi Kwon, and Byungjin Cho. "In-depth Investigation of Hg2Br2 Crystal Growth and Evolution." Materials 12, no. 24 (2019): 4224. http://dx.doi.org/10.3390/ma12244224.

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Physical vapor transport (PVT) has frequently been adopted for the synthesis of mercurous bromide (Hg2Br2) single crystals for acousto-optic modulators. However, thus far, very few in-depth studies have been conducted that elucidate the growth process of the Hg2Br2 single crystal. This paper reports an in-depth investigation regarding the crystal growth and evolution behavior of the Hg2Br2 crystal with facet growth mode. Based on the experimental and simulation results, the temperature profile conditions concerning the seed generation and seed growth could be optimized. Next, the PVT-grown Hg2

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19

Cröll, Arne, and Martin P. Volz. "Detached Bridgman Growth—A Standard Crystal Growth Method with a New Twist." MRS Bulletin 34, no. 4 (2009): 245–50. http://dx.doi.org/10.1557/mrs2009.74.

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AbstractBridgman or vertical gradient freeze (VGF) crystal growth processes have several advantages compared to other melt growth methods, especially the possibility to achieve a low level of thermal stress and low dislocation densities in the grown crystals. However, crystals grown in contact with a crucible usually suffer from mechanical stress during cooling, reducing the structural quality. The “detached” or “dewetted” Bridgman growth avoids this problem and has recently been investigated in more detail as a promising tool to improve crystal quality. Detached growth, where the crystal is s

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20

Tokuda, Yuichiro, Norihiro Hoshino, Hironari Kuno, et al. "Fast 4H-SiC Bulk Growth by High-Temperature Gas Source Method." Materials Science Forum 1004 (July 2020): 5–13. http://dx.doi.org/10.4028/www.scientific.net/msf.1004.5.

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The process conditions for fast growth of 4 in. 4H-polytype SiC (4H-SiC) single crystals were studied for high-temperature gas source method. Prior to experiments, crystal growth simulations were conducted to investigate the influence of vertical gas-flow velocity on the radial distribution of the growth rate. Crystal growth experiments were performed using the crucibles designed for 4 in. crystal growth following the simulation studies. By investigating growth rate as functions of the input partial pressure of source gases and temperatures of growing surfaces, expressions for the growth rate

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21

Lu, Zheng Qian, Yi Pu Qu, Mussaab I. Niass, Muhammad Nawaz Sharif, Yu Huai Liu, and Fang Wang. "Effect of Growth Chamber Structure on the Growth of Aluminum Nitride Crystals." Materials Science Forum 954 (May 2019): 3–8. http://dx.doi.org/10.4028/www.scientific.net/msf.954.3.

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AlN crystals are one of the representative III-V group semiconductor materials. AlN has good electric field characteristics, thermal conductivity and thermal stability. Owing to its wide direct band gap of 6.2eV [1], it can achieve a luminescent wavelength of 210 nanometers in deep ultraviolet, which is an ideal material for UV and deep UV LED devices. But preparation of AlN crystals with PVT for growing conditions demanding, 0.3-0.5 atm of high purity nitrogen atmosphere of growth and the growth of 2100-2400 K temperature [2, 3]. In this paper, two kinds of growth chamber structures are desig

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22

Klunnikova, Yu V., S. P. Malyukov, A. V. Filimonov, and N. Zhang. "Analysis of heat transfer processes for sapphire growth by horizontal directed crystallization method." Journal of Advanced Dielectrics 10, no. 01n02 (2020): 2060001. http://dx.doi.org/10.1142/s2010135x20600012.

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This research summarizes the analytical and experimental results of heat-transfer processes influence on defects formation during sapphire crystal growth by horizontal directed crystallization method (HDC). The shape of solid-melt interface significantly influences the process of sapphire crystals growth by this method. We receive the Stefan problem solution for sapphire crystals growth. It allows investigating the crystal growth process and the related factors (thermal stresses on different stages of growth process), their influence on defects formation. We investigate the main reasons for th

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Agrosí, Giovanna, Eugenio Scandale, and Maria Arcangela Digennaro. "Growth defects of a melanite crystal." Neues Jahrbuch für Mineralogie - Abhandlungen 176, no. 1 (2001): 89–107. http://dx.doi.org/10.1127/njma/176/2001/89.

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24

Yu, Ruixian, Gang Zhao, Kai Jiang, Wenjing Tang, Lei Zhang, and Wei Xia. "Research on the Micromorphology of the Native Surface of 2-Inch Aluminum Nitride Single Crystals." Materials 18, no. 5 (2025): 1147. https://doi.org/10.3390/ma18051147.

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High-quality 2-inch aluminum nitride (AlN) crystals were grown using a double-zone resistance heating system, and the growth mechanism of AlN bulk crystals was further investigated. It was found that during the growth process, the vapor pressure at the growth interface, as well as the quality and structure of the seed crystal, was closely related to the growth conditions. The 2-inch AlN crystals were characterized using high-resolution X-ray diffraction (HRXRD) and optical microscopy. Optical microscopy observations of different regions on the native surface of the crystals revealed several mo

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Qin, Mengfei, Xinguang Xu, Guangwei Yu, Bo Wang, and Wenyong Cheng. "Rapid Growth of KDP Crystals in the [101] Direction." Crystals 10, no. 2 (2020): 108. http://dx.doi.org/10.3390/cryst10020108.

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KDP crystals have important applications in inertial confinement fusion. However, during the rapid growth of large-sized KDP crystals, inclusion is prone to occur. The existence of inclusion will lead to the reduction of crystal quality and utilization and even the end of the growth process. The generation of inclusion is related to the interaction between the crystal and the liquid flow. In this paper, we changed the hydrodynamic condition around the crystal by changing the crystal growth direction and achieve the rapid growth of [101] direction KDP crystals without inclusion at a low rotatio

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Fedorov, Pavel P. "Review on the paper Reversed Crystal Growth." Modern Electronic Materials 7, no. (1) (2021): 31–32. https://doi.org/10.3897/j.moem.7.1.73285.

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27

Derby, Jeffrey J. "Theoretical Modeling of Czochralski Crystal Growth." MRS Bulletin 13, no. 10 (1988): 29–35. http://dx.doi.org/10.1557/s0883769400064162.

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The growth of single crystals with precisely controlled properties is one of the most demanding goals of modern materials processing, and its realization depends on the application of fundamentals from solid-state physics, chemistry, thermodynamics, and transport phenomena. Bulk semiconductor substrates and many high-power solid-state laser host materials are typically produced by solidification from the melt. The quality of the crystals produced this way hinges on process conditions which are predominantly determined by the transport of heat, mass, and momentum in the melt and crystal. Accura

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Wang, Haoyu, Jianhui Xiong, Man Li, Jufeng Geng, Shangke Pan, and Jianguo Pan. "Crystal Growth, Luminescence and Scintillation Characterizations of Cs2KLaCl6:Ce and Cs2KCeCl6." Crystals 11, no. 6 (2021): 653. http://dx.doi.org/10.3390/cryst11060653.

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Elpasolite halides scintillation crystals have been proven to be very important materials for X-ray and γ-ray detector applications. The crystals of Cs2KLaCl6:4% Ce (CKLC) and Cs2KCeCl6 (CKCC) belong to novel scintillation of the Chloro-elpasolite crystal family. In this paper, the crystal growth of CKLC and CKCC crystals using the vertical Bridgman techniques were reported. The PXRD patterns showing both crystals have a cubic crystal structure. Both crystals have similar photoluminescence excitation and emission spectra, the fluorescence decay time of CKLC and CKCC crystals were about 49.7 an

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29

P., Geneva Sequirea Roche, Lesly Fathima A., and Selvarajan P. "CRYSTAL NUCLEATION, CRYSTAL GROWTH, SPECTRAL AND SHG STUDIES OF POTASSIUM IODATE CRYSTAL." International Journal of Advanced Trends in Engineering and Technology 3, no. 1 (2018): 70–78. https://doi.org/10.5281/zenodo.1203661.

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Solution growth was adopted to grow crystals of potassium iodate and here AR grade chemicals of potassium chloride and iodic acid were used in the crystal growth experiment. The grown crystals were observed to be transparent and slightly hygroscopic. The solubility study has been carried out in the temperature range 30<sup>o </sup>C-60<sup>o </sup>C in water and it is found that the sample has positive temperature coefficient of solubility. The critical nucleation parameters were evaluated by nucleation kinetic studies. The lattice constants of the grown crystal of potassium iodate were found

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Aisling, Lynch, and Rasmuson Åke. "Crystal Growth of Single Salicylamide Crystals." Crystal Growth & Design 19, no. 12 (2019): 7230–39. http://dx.doi.org/10.1021/acs.cgd.9b01101.

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De Goede, R., and G. M. Van Rosmalen. "Crystal growth phenomena of paraxylene crystals." Journal of Crystal Growth 104, no. 2 (1990): 399–410. http://dx.doi.org/10.1016/0022-0248(90)90140-g.

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32

Cartwright, Julyan H. E., Antonio G. Checa, Bruno Escribano, and C. Ignacio Sainz-Díaz. "Crystal growth as an excitable medium." Philosophical Transactions of the Royal Society A: Mathematical, Physical and Engineering Sciences 370, no. 1969 (2012): 2866–76. http://dx.doi.org/10.1098/rsta.2011.0600.

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Crystal growth has been widely studied for many years, and, since the pioneering work of Burton, Cabrera and Frank, spirals and target patterns on the crystal surface have been understood as forms of tangential crystal growth mediated by defects and by two-dimensional nucleation. Similar spirals and target patterns are ubiquitous in physical systems describable as excitable media. Here, we demonstrate that this is not merely a superficial resemblance, that the physics of crystal growth can be set within the framework of an excitable medium, and that appreciating this correspondence may prove u

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33

Arivanandhan, M., G. Rajesh, A. Tanaka, et al. "Bulk Growth of InGaSb Alloy Semiconductor under Terrestrial Conditions: A Preliminary Study for Microgravity Experiments at ISS." Defect and Diffusion Forum 323-325 (April 2012): 539–44. http://dx.doi.org/10.4028/www.scientific.net/ddf.323-325.539.

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As a preliminary experiment for the growth of InGaSb alloy crystals under microgravity at International Space Station (ISS), bulk crystal was grown under terrestrial condition using the same gradient heating furnace (GHF). Czochralski grown GaSb <111>B single crystal was used as a seed and feed crystals for the growth of InGaSb bulk crystals. During the growth, heat pulses were intentionally introduced periodically to create the growth striations. From the striations, the growth rate of the grown crystal was estimated. The results show that the growth rate was gradually increased from th

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Lee, Sang Il, Jung Young Jung, Mi Seon Park, et al. "SiC Single Crystal Growth on Dual Seed with Different Surface Properties." Materials Science Forum 740-742 (January 2013): 11–14. http://dx.doi.org/10.4028/www.scientific.net/msf.740-742.11.

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SiC crystal ingots were grown on 6H-SiC dual-seed crystal with different surface properties by a PVT (Physical Vapor Transport) technique. And then SiC crystal wafers sliced from the SiC ingots were systematically investigated in order to find out the dependence of surface properties for seed on the polytype formation. While n-type SiC crystals exhibiting the 4H polytype were grown on seed crystal having high root-mean-square (rms) value, 6H-SiC crystals were grown on seed having lower rms value. However, 6H polytype was maintained on on-axis and off-axis seeds during the entire growth period.

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Ren, Yi Jin. "Study on Lamellar Crystal Orientation and Instable Growth in Polymer Ultrathin Films." Advanced Materials Research 482-484 (February 2012): 1000–1003. http://dx.doi.org/10.4028/www.scientific.net/amr.482-484.1000.

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The lamellar crystal orientation and crystal instable growth in polymer ultrathin films were studied. The orientation of lamellar crystal transforms from edge-on to flat-on with decreasing film thickness due to the enhancement of restriction effect of polymer-substrate on the edge-on lamellar crystals. Lamellar crystals in ultrathin films have a instable growth and become a dendrite at the growth front because of the diffusion-controlled growth.

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36

A., Jagadesan, Sivakumar N., and Arjunan S. "Growth, structure and spectroscopic studies of an organic optical material: 4-Aminopyridinium 4-nitrophenolate 4-nitrophenol single crystal." Journal of Indian Chemical Society Vol. 96, Jan 2019 (2019): 61–62. https://doi.org/10.5281/zenodo.5652797.

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Department of Physics, RMK Engineering College, Kavarapettai, Chennai-601 206, India <em>E-mail</em>: arjunan_hce@yahoo.co.in Crystal Growth Centre, Anna University, Chennai-600 025, India <em>Manuscript received online 25 August 2018, accepted 09 October 2018</em> Organic nonlinear optical (NLO) crystals play an important role in optical device fabrication. The use of p-nitro phenol for the production of crystalline salt with aromatic base is of considerable interest for the nonlinear optical applications. Single crystals of 4-aminopyridinium 4-nitrophenolate 4-nitrophenol (4AP4NP) were grown

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Morito, Haruhiko, Hisanori Yamane, Rie Y. Umetsu, and Kozo Fujiwara. "Seeded Growth of Type-II Na24Si136 Clathrate Single Crystals." Crystals 11, no. 7 (2021): 808. http://dx.doi.org/10.3390/cryst11070808.

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Type-II Na24Si136 clathrate octahedral single crystals surrounded by {111} facets were grown by evaporating Na from a molten mixture of Na4Si4 and Na9Sn4 at 823 K for 12 h. One of the obtained single crystals was used as a seed for the following single crystal growth of the type-II clathrate using the same method. The single crystal grown on the seed maintained the octahedral shape. The weight of the crystal grown with the seed was increased from 0.6 to 30.4 mg by repeating the seeded growth and was proportional to the surface area of the seed crystal.

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38

Pusey, M. L., R. S. Snyder, and R. Naumann. "Protein crystal growth. Growth kinetics for tetragonal lysozyme crystals." Journal of Biological Chemistry 261, no. 14 (1986): 6524–29. http://dx.doi.org/10.1016/s0021-9258(19)84593-3.

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39

Wolf, Th. "Crystal growth mechanisms and growth anisotropy of YBa2Cu3O crystals." Journal of Crystal Growth 166, no. 1-4 (1996): 810–15. http://dx.doi.org/10.1016/0022-0248(96)00143-1.

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40

Rajesh, K., B. Milton Boaz, and P. Praveen Kumar. "Growth and Characterization of Pure and Doped L-Alanine Tartrate Single Crystals." Journal of Materials 2013 (March 25, 2013): 1–5. http://dx.doi.org/10.1155/2013/613092.

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Single crystals of pure and Lanthanum doped L-Alanine Tartrate were grown by slow evaporation method. The cell parameters were determined using single crystal X-ray diffraction method. To improve the physical properties of the LAT crystal, Lanthanum dopant was added by 2 mol%. ICP studies confirm the presence of Lanthanum in the grown LAT crystal. Transparency range of the crystal was determined using UV-VIS-NIR spectrophotometer. The functional groups of pure and doped LAT crystals were analyzed by FT-IR spectroscopy. Using Vickers microhardness tester, mechanical strength of the material was

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Honjo, S., M. J. Cima, M. C. Flemings, et al. "Seeded Crystal Growth of Yba2Cu3O6.5 in Semisolid Melts." Journal of Materials Research 12, no. 4 (1997): 880–90. http://dx.doi.org/10.1557/jmr.1997.0128.

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Melt textured single crystals of YBa2Cu3O6.5 (123) superconductors were produced by isothermal solidification from a semisolid melt using single crystal NdBa2Cu3O6.5 or SmBa2Cu3O6.5 seeds. The microstructure within the single crystals shows an inhomogeneous segregation of Y2BaCO5 (211) particles trapped in the 123 crystals during solidification. The concentration of 211 particles varies with the crystal axes in 123 crystals produced from precursors with compositions of 80 wt.% 123 powder and 20 wt.% excess 211. The 211 particle concentration along the c-axis in the crystal is much lower than t

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McDonald, Matthew A., Andreas S. Bommarius, Martha A. Grover, and Ronald W. Rousseau. "Direct Observation of Growth Rate Dispersion in the Enzymatic Reactive Crystallization of Ampicillin." Processes 7, no. 6 (2019): 390. http://dx.doi.org/10.3390/pr7060390.

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Prediction and control of crystal size distributions, a prerequisite for production of consistent crystalline material in the pharmaceutical industry, requires knowledge of potential non-idealities of crystal growth. Ampicillin is one such medicine consumed in crystal form (ampicillin trihydrate). Typically it is assumed that all crystals of the same chemical and geometric type grow at the same rate, however a distribution of growth rates is often observed experimentally. In this study, ampicillin produced enzymatically is crystallized and a distribution of growth rates is observed as individu

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Tang, Xia, Botao Liu, Yue Yu, Sheng Liu та Bing Gao. "Numerical Analysis of Difficulties of Growing Large-Size Bulk β-Ga2O3 Single Crystals with the Czochralski Method". Crystals 11, № 1 (2020): 25. http://dx.doi.org/10.3390/cryst11010025.

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The difficulties in growing large-size bulk β-Ga2O3 single crystals with the Czochralski method were numerically analyzed. The flow and temperature fields for crystals that were four and six inches in diameter were studied. When the crystal diameter is large and the crucible space becomes small, the flow field near the crystal edge becomes poorly controlled, which results in an unreasonable temperature field, which makes the interface velocity very sensitive to the phase boundary shape. The effect of seed rotation with increasing crystal diameter was also studied. With the increase in crystal

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Le, Fisher, and Moon. "Effect of Composition on the Growth of Single Crystals of (1−x)(Na1/2Bi1/2)TiO3-xSrTiO3 by Solid State Crystal Growth." Materials 12, no. 15 (2019): 2357. http://dx.doi.org/10.3390/ma12152357.

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The (1−x)(Na1/2Bi1/2)TiO3-xSrTiO3 (NBT-100xST) system is a possible lead-free candidate for actuator applications because of its excellent strain vs. electric field behaviour. Use of single crystals instead of polycrystalline ceramics may lead to further improvement in piezoelectric properties but work on single crystal growth in this system is limited. In particular, the effect of composition on single crystal growth has yet to be studied. In this work, single crystals of (NBT-100xST) with x = 0.00, 0.05, 0.10 and 0.20 were grown using the method of Solid State Crystal Growth. [001]-oriented

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Pogodin, A. I., M. J. Filep, Yu P. Zhukova, T. O. Malakhovska, and O. P. Kokhan. "CRYSTAL GROWTH OF Ag8SiS6." Scientific Bulletin of the Uzhhorod University. Series «Chemistry» 51, no. 1 (2024): 39–43. http://dx.doi.org/10.24144/2414-0260.2024.1.39-43.

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Compounds with high ionic conductivity in the solid state, the so-called superionics, are of considerable interest. This scientific interest is driven by the ever-increasing demand for electrochemical energy storage. Promising superionic compounds include argyrodites, complex chalcogenides formed on the basis of two types of cations. This paper presents the results of studies on the growth of Ag8SiS6 single crystal. The growth of Ag8SiS6 single crystals was carried out in two stages. The first stage involved the synthesis of a polycrystalline Ag8SiS6 alloy by fusing high-purity elemental compo

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Babu, B., J. Chandrasekaran, and S. Balaprabhakaran. "Growth and characterization of hexamethylenetetramine crystals grown from solution." Materials Science-Poland 32, no. 2 (2014): 164–70. http://dx.doi.org/10.2478/s13536-013-0176-7.

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AbstractOrganic nonlinear optical single crystals of hexamethylenetetramine (HMT; 10 × 10 × 5 mm3) were prepared by crystallization from methanol solution. The grown crystals were subjected to various characterization techniques such as single crystal XRD, powder XRD, UV-Vis and electrical studies. Single crystal XRD analysis confirmed the crystalline structure of the grown crystals. Their crystalline nature was also confirmed by powder XRD technique. The optical transmittance property was identified from UV-Vis spectrum. Dielectric measurements were performed as a function of frequency at dif

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He, Xinke, Linnong Li, Xinqi He, and Chao Xie. "Multi-Physical Field Simulation of Cracking during Crystal Growth by Bridgman Method." Materials 16, no. 8 (2023): 3260. http://dx.doi.org/10.3390/ma16083260.

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Crystal materials are prone to cracking during growth, which is a key problem leading to slow growth and difficulty in forming large-size crystals. In this study, based on the commercial finite element software COMSOL Multiphysics, the transient finite element simulation of the multi-physical field, including fluid heat transfer—phase transition—solid equilibrium—damage coupling behaviors, is performed. The phase-transition material properties and maximum tensile strain damage variables are customized. Using the re-meshing technique, the crystal growth and damage are captured. The results show

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Sandip, Unadkat, and Solanki G.K. "Growth and Structural Characterization of CuWO4 Crystals by Flux Growth Method." Research and Applications: Emerging Technologies 2, no. 2 (2020): 1–6. https://doi.org/10.5281/zenodo.3886866.

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<em>This paper represents the investigation on the growth of CuWO<sub>4</sub> (Copper Tungstate) crystals by flux growth technique. After growing the crystals the structural characterization is done by X-ray Diffraction (XRD) to find out lattice parameters, unit cell volume, X-ray density as well as particle size. Stoichiometry of grown crystal is confirmed by Energy Dispersive Analysis of X-rays (EDAX).</em>  

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Niu, Xin Huan, Bai Mei Tan, Xiao Hong Zhao, and Wei Lian Zhang. "Growth and Fundamental Properties of SiGe Single Crystal." Advanced Materials Research 129-131 (August 2010): 139–42. http://dx.doi.org/10.4028/www.scientific.net/amr.129-131.139.

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Silicon-Germanium (SiGe) single crystal is a fully miscible solid solution with diamond-base, and has attracted keen interest as material for applications such as microelectronic and optoelectronic devices. Consequently, there is a need for SiGe crystals of low dislocation density and large dimensions. In this study, the growth mechanism and methods of SiGe bulk single crystal were described and the PMCZ method made by ourselves was analyzed. The properties of PMCZ SiGe single crystal with different Ge concentrations were discussed. The result shows that the longitudinal distribution homogenei

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Seki, Kazuaki, Ryo Tanaka, Toru Ujihara, and Yoshikazu Takeda. "Polytype and Crystal Quality of SiC Crystals Grown on 3C-SiC by Seeded Solution Method." Materials Science Forum 615-617 (March 2009): 27–30. http://dx.doi.org/10.4028/www.scientific.net/msf.615-617.27.

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We investigated the effects of the solution growth process on the polytype and crystal quality of the crystals grown on (111) 3C-SiC seed crystals. In spite of the use of 3C-SiC seed crystals, the polytype of the grown crystal changed from 3C-SiC to 6H-SiC, because the stacking errors easily occur due to the similarity of the (111) face of 3C-SiC and the (0001) face of 6H-SiC. Moreover, the grown 6H-SiC crystal affected the crystal quality of the seed crystal, i.e., high-density stacking faults were induced in the seed crystal after the growth process.

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