Relevant bibliographies by topics / Cuprous ion

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  1. Journal articles
  2. Dissertations / Theses
  3. Book chapters
  4. Conference papers

Academic literature on the topic 'Cuprous ion'

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Published: 9 September 2021
Last updated: 12 February 2022

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Journal articles on the topic "Cuprous ion"

1

Omur-Ozbek, Pinar, and Andrea M. Dietrich. "Retronasal perception and flavour thresholds of iron and copper in drinking water." Journal of Water and Health 9, no. 1 (February 3, 2011): 1–9. http://dx.doi.org/10.2166/wh.2011.157b.

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Drinking water flavour has a strong role in water quality perception, service satisfaction, willingness to pay and selection of water sources. Metallic flavours are often caused by the dissolved iron and copper, commonly found in groundwater or introduced to tap water by corroding infrastructure. Taste thresholds of iron and copper have been investigated by several studies; however, reported results and test methods vary considerably. This study determined the taste thresholds of ferrous and cuprous ions in room temperature reagent water by using the one-of-five test with multi-nation panellists in the United States. For ferrous and cuprous ions, individual thresholds ranged from 0.003 to >5 mg l−1 and 0.035 to >5 mg l−1, respectively. Population thresholds were determined by logistic regression and geometric mean methods as 0.031 and 0.05 mg l−1 for ferrous ion, and 0.61 mg l−1 for cuprous ion by both methods. The components of metallic sensation were investigated by use of nose-clips while panellists ingested iron and copper solutions. Results showed that metallic sensation has a significant odour component and should be treated as a flavour instead of a taste. Ferrous, cuprous and cupric ions also produced weak bitter and salty tastes as well as astringent mouthfeel. In comparison, ferric ion produced no sensation.
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Xue, Juan Qin, Xiao Zhao, Yao Liu, Xue Ting Quan, and Cong Wang. "Disposal of Cuprous Chloride Waste Water with the Ion-Exchange." Applied Mechanics and Materials 295-298 (February 2013): 1825–28. http://dx.doi.org/10.4028/www.scientific.net/amm.295-298.1825.

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Based on the analysis of the structure property of the ions in the cuprous chloride wastewater, the study on the ion exchange of the cuprous chloride wastewater and the regeneration of resin had been experimentally investigated with 201×7OH— strong-alkali negative ion resin and 732Na strong-acidity positive ion resins. The influence on the disposal effect from the variation of pH and the addition of NaCl and Na2SO4 had been examined. The results showed that for the negative ion exchange reaction. If pH was adjusted with HCl, the concentration of copper in the waste water decreased slowly as pH decreases. If pH was adjusted with H2SO4, the concentration of copper in the waste water increased slowly as pH decreases. The addition of NaCl and Na2SO4 could enhance the exchange efficiency of negative ion. For the positive ion exchange reaction, the exchange efficiency of positive ion could be enhanced by the addition of HCl or H2SO4 which decreases pH; the addition of NaCl and Na2SO4 could enhance the exchange efficiency of positive ion, but was not significant.
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Schmidt, Ralf, and Josef Gaida. "Cuprous Ion Mass Transport Limitations During Copper Electrodeposition." ChemElectroChem 4, no. 8 (June 1, 2017): 1849–51. http://dx.doi.org/10.1002/celc.201700208.

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Hayashi, Taro, Shogo Matsuura, Kazuo Kondo, Kentaro Kataoka, Kohei Nishimura, Masayuki Yokoi, Takeyasu Saito, and Naoki Okamoto. "Role of Cuprous Ion in Copper Electrodeposition Acceleration." Journal of The Electrochemical Society 162, no. 6 (2015): D199—D203. http://dx.doi.org/10.1149/2.0471506jes.

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Kannar, S., and P. Mohazzabi. "An ion-scattering spectrometric study of cuprous sulphide." Journal of Materials Science Letters 4, no. 6 (June 1985): 720–24. http://dx.doi.org/10.1007/bf00726971.

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Zhang, Jiaxu, Xiang Wang, Jing Lv, Dong-Sheng Li, and Tao Wu. "A multivalent mixed-metal strategy for single-Cu+-ion-bridged cluster-based chalcogenide open frameworks for sensitive nonenzymatic detection of glucose." Chemical Communications 55, no. 45 (2019): 6357–60. http://dx.doi.org/10.1039/c9cc02905b.

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Jamnický, Miroslav, Jaroslav Sedláček, and Peter Znášik. "The Structure and Properties of Cuprous Ion Conducting Glasses." Solid State Phenomena 90-91 (April 2003): 221–26. http://dx.doi.org/10.4028/www.scientific.net/ssp.90-91.221.

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Kondo, K., H. Kouta, M. Yokoi, N. Okamoto, T. Saito, and T. Hayashi. "Cuprous Ion As An Accelerant of Copper Damascene Electrodeposition." ECS Transactions 58, no. 17 (February 27, 2014): 89–96. http://dx.doi.org/10.1149/05817.0089ecst.

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Graham, D. R., and K. W. Statham. "Some Observations on Dyeing by the Cuprous-ion Method." Journal of the Society of Dyers and Colourists 75, no. 9 (October 22, 2008): 452–55. http://dx.doi.org/10.1111/j.1478-4408.1959.tb02341.x.

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Ma, Jing, En Zhou, Cong Fan, Bo Wu, Chao Li, Zheng-Hong Lu, and Jingze Li. "Endowing CuTCNQ with a new role: a high-capacity cathode for K-ion batteries." Chemical Communications 54, no. 44 (2018): 5578–81. http://dx.doi.org/10.1039/c8cc00802g.

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CuTCNQ with a cuprous cation (Cu+) and an organic anion (TCNQ−) has been initially synthesized as an organic cathode for K-ion batteries, which can realize a three-electron redox mechanism and a maximum specific discharge capacity of 244 mA h g−1.
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Dissertations / Theses on the topic "Cuprous ion"

1

Mokmeli, Mohammad. "Kinetics of selenium and tellurium removal with cuprous ion from copper sulfate-sulfuric acid solution." Thesis, University of British Columbia, 2014. http://hdl.handle.net/2429/46407.

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Dissemination of selenium and tellurium in pyritic ores and many of the sulphide minerals results in the contamination of pregnant leach solutions and electrolytes in hydrometallurgical treatment of sulphide ores and residues. In an effort to reduce the detrimental effects of selenium and tellurium, it has been of great interest to remove selenium and tellurium from contaminated solutions to lower levels than allowed in regulations, product specifications or process requirements. The selenium and tellurium content of the solution may be reduced into insoluble precipitates of copper selenides and tellurides using cuprous ion. Cuprous ion has uses as a reducing agent in hydrometallurgical applications and can be specifically used to remove selenium and tellurium ions from copper sulphate-sulfuric acid solutions. In this study, the chemistry and kinetics of the removal of selenium and tellurium from copper sulfate-sulfuric acid solutions by cuprous ion reduction and precipitation was pursued. At first, a study of equilibrium cuprous concentrations for the cupric–copper metal reaction was performed and an empirical function capable of predicting the saturated [Cu+] was suggested at different temperatures, cupric and sulfuric acid concentrations. Secondly, the kinetics of the selenium removal with cuprous was studied and the mechanism of the reduction reaction and the rate law was determined over a wide range of acidity and temperature. The effects of temperature, acidity, cupric concentration and ionic strength on selenium removal rate were also studied. Subsequently, rate constants as functions of temperature, acidity and ionic strength were suggested. Thirdly, the tellurium reduction chemistry and reaction kinetics by means of cuprous in a wide range of conditions were investigated. The mechanism of the reaction, rate constants and activation energies were also determined. Similarly to selenium, effects of temperature and acidity on tellurium removal rate were also studied and rate constants as a function of temperature and acidity were suggested. Selenium and tellurium reduction reaction times can be estimated at different acidities and temperatures using the suggested rate laws and rate constant functions.
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Ruivo, Andreia Filipa Cardoso. "Synthesis and characterization of innovative luminescent glasses for artistic applications." Doctoral thesis, Faculdade de Ciências e Tecnologia, 2013. http://hdl.handle.net/10362/11279.

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Simpson, Zachary Ian. "Advanced Materials for Energy Conversion and Storage: Low-Temperature, Solid-State Conversion Reactions of Cuprous Sulfide and the Stabilization and Application of Titanium Disilicide as a Lithium-Ion Battery Anode Material." Thesis, Boston College, 2013. http://hdl.handle.net/2345/3042.

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Thesis advisor: Dunwei Wang
In this work, we present our findings regarding the low-temperature, solid-state conversion of Cu₂S nanowires to Cu₂S/Cu₅FeS₄ rod-in-tube structures, Cu₂S/ZnS segmented nanowires, and a full conversion of Cu₂S nanowires to ZnS nanowires. These conversion reactions occur at temperatures as low as 105 degrees Celsius, a much lower temperature than those required for reported solid-state reactions. The key feature of the Cu₂S nanowires that enables such low conversion temperatures is the high ionic diffusivity of the Cu⁺ within a stable S sublattice. The second portion of this work will focus on the oxide-stabilization and utilization of TiSi₂ nanonets as a lithium-ion battery anode. This nanostructure, first synthesized in our lab, was previously demonstrated to possess a lithium storage capacity when cycled against a metallic Li electrode. However, with subsequent lithiation and delithiation cycles, the TiSi₂ nanonet structure was found to be unstable. By allowing a thin oxide layer to form on the surface of the nanonet, we were able to improve the capacity retention of the nanonets in a lithium-ion half-cell; 89.8% of the capacity of the oxide-coated TiSi₂ was retained after 300 cycles compared to 62.3% of the capacity of as-synthesized TiSi₂ nanonets after 300 cycles. The layered structure of C49 TiSi₂ exhibited in the nanonets allows for a specific capacity greater than 700 mAh g(-1), and the high electrical conductivity of the material in conjunction with the layered structure confer the ability to cycle the anode at rates of up to 6C, i.e., 10 minute charge and discharge cycles, while still maintaining more than 75% of the capacity at 1C, i.e., 1 hour charge and discharge cycles
Thesis (MS) — Boston College, 2013
Submitted to: Boston College. Graduate School of Arts and Sciences
Discipline: Chemistry
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Dhakal, Dileep. "Growth Monitoring of Ultrathin Copper and Copper Oxide Films Deposited by Atomic Layer Deposition." Doctoral thesis, Universitätsbibliothek Chemnitz, 2017. http://nbn-resolving.de/urn:nbn:de:bsz:ch1-qucosa-229808.

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Atomic layer deposition (ALD) of copper films is getting enormous interest. Ultrathin Cu films are applied as the seed layer for electrochemical deposition (ECD) of copper in interconnect circuits and as the non-magnetic material for the realization of giant magnetoresistance (GMR) sensors. Particularly, Co/Cu multi-layered structures require sub 4.0 nm copper film thickness for obtaining strong GMR effects. The physical vapor deposition process for the deposition of the copper seed layers are prone to non-conformal coating and poor step coverage on side-walls and bottoms of trenches and vias, and presence of overhanging structures. This may cause failure of interconnections due to formation of voids after copper ECD. ALD is the most suitable technology for the deposition of conformal seed layers for the subsequent ECD in very high aspect ratio structures, also for the technology nodes below 20 nm. Surface chemistry during the ALD of oxides is quite well studied. However, surface chemistry during the ALD of pure metal is rather immature. This knowledge is necessary to optimize the process parameters, synthesize better precursors systems, and enhance the knowledge of existing metal ALD processes. The major goal of this work is to understand the surface chemistry of the used precursor and study the growth of ultrathin copper films using in-situ X-ray photoelectron spectroscopy (XPS). Copper films are deposited by ALD using the precursor mixture consisting of 99 mol% [(nBu3P)2Cu(acac)], as copper precursor and 1 mol% of Ru(η5 C7H11)(η5 C5H4SiMe3), as ruthenium precursor. The purpose in having catalytic amount of ruthenium precursor is to obtain the Ru doped Cu2O layers for subsequent reduction with formic acid at temperatures below 150 °C on arbitrary substrates. Two different approaches for the growth of ultrathin copper films have been studied in this dissertation. In the first approach, direct thermal ALD of copper has been studied by using H2 as co-reactant on Co as catalytic substrate. In the second approach, Ru-doped Cu2O is deposited by ALD using wet-O2 as co-reactant on SiO2 as non-catalytic substrate. The Ru-doped Cu2O is successfully reduced by using either formic acid or carbon-monoxide on SiO2
Atomlagenabscheidung (ALD) von Kupfer steht im Fokus der ALD Gemeinschaft. Ultradünne Kupferschichten können als Keimschicht für die elektrochemische Abscheidung (ECD) von Kupfer in der Verbindungstechnologie eingesetzt werden. Sie können ebenfalls für Sensoren, welche auf den Effekt des Riesenmagnetowiderstandes (GMR) basieren, als nicht-ferromagnetische Zwischenschicht verwendet werden. Insbesondere Multischichtstrukturen aus ferromagnetische Kobalt und Kupfer erfordern Schichtdicken von weniger als 4,0 nm, um einen starken GMR-Effekt zu gewährleisten. Das derzeit verwendete physikalische Dampfabscheidungsverfahren für ultradünne Kupferschichten, ist besonders anfällig für eine nicht-konforme Abscheidung an den Seitenwänden und Böden von Strukturen mit hohem Aspektverhältnis. Des Weiteren kann es zur Bildung von Löchern und überhängenden Strukturen kommen, welche bei der anschließenden Kupfer ECD zu Kontaktlücken (Voids) führen können. Für die Abscheidung einer Kupfer-Keimschicht ist die ALD besonders gut geeignet, da sie es ermöglicht, ultradünne konforme Schichten auf strukturierten Oberflächen mit hohem Aspektverhältnis abzuscheiden. Dies macht sie zu einer der Schlüsseltechnologien für Struckturgrößen unter 20 nm. Im Gegensatz zur Oberflächenchemie rein metallischer ALD sind die Oberflächenreaktionen für oxidische ALD Schichten sehr gut untersucht. Die Kenntnis der Oberflächenchemie während eines ALD Prozesses ist essenziel für die Bestimmung von wichtigen Prozessparametern als auch für die Verbesserung der Präkursorsynthese ansich. Diese Arbeit beschäftigt sich mit der Untersuchung der Oberflächenchemie und Charakterisierung des Wachstums von ultradünnen Metall-Cu-Schichten mittels In-situ XPS, welche eines indirekten (Oxid) bzw. direkten Metall-ALD Prozesses abgeschieden werden, wobei die Kupfer-Oxidschichten im Anschluss einem Reduktionsprozess unterworfen werden. Hierfür wird eine Präkursormischung bestehend aus 99 mol% [(nBu3P)2Cu(acac)] und 1 mol% [Ru(η5 C7H11)(η5-C5H4SiMe3)] verwendet. Die katalytische Menge an Ru, welche in der entstehenden Cu2O Schicht verbleibt, erhöht den Effekt der Reduktion der Cu2O Schicht auf beliebigen Substraten mit Ameinsäure bei Wafertemperaturen unter 150 °C. In einem ersten Schritt wird ein direkter thermisches Kupfer ALD-Prozess, unter Verwendung von molekularem Wasserstoff als Coreaktant, auf einem Kobalt-Substrat untersucht. In einem zweiten Schritt wird ein indirekter thermischer Cu2O-ALD-Prozess, unter gleichzeitiger Verwendung von Sauerstoff und Wasserdampf als Coreaktant, mit anschließender Reduktion durch Ameinsäure oder Kohlenstoffmonoxid zu Kupfer auf den gleichen Substraten betrachtet. Die vorliegende Arbeit beschreibt das Wachstum von ultradünnen und kontinuierlichen Kupfer-Schichten mittels thermischer ALD auf inerten- SiO2 und reaktiven Kobalt-Substraten
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ROUSSELET, GUILHEM. "Nouvelles reactions cupro-catalysees des amines. Transformation des amines tertiaires et des n-oxydes en ions iminiums, epoxydation intramoleculaire. Synthese et utilisation synthetique des amidines." Paris 6, 1996. http://www.theses.fr/1996PA066368.

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Les sels cuivriques ainsi que l'oxygene moleculaire en presence de sels cuivreux oxydent la trimethylamine en ion n,n-dimethyliminium. Ce resultat conduit a la description d'un modele biomimetique de l'oxydation des amines tertiaires par les cupro-enzymes laccase et ceruloplasmine humaine. L'etude de la transformation des n-oxydes d'amines par les sels de cuivre a permis la mise au point d'une nouvelle voie d'acces aux ions iminiums. L'oxydation des 1-methyltetrahydropyridines resultant de l'interaction de l'oxygene moleculaire sur les sels cuivreux, et la transformation de leurs n-oxydes par les sels de cuivre conduisent a la formation d'epoxydes. Une meme espece active du cuivre, formellement de degre d'oxydation 3, est responsable de ces deux reactions. Les sels cuivreux catalysent la formation des amidines par condensation directe des amines sur les nitriles. La mesure de la constante de complexation des sels cuivreux par les amidines a permis de rationaliser le role du cuivre dans cette premiere synthese generale des amidines en une etape. Nous presentons de nouvelles reactions qui valorisent les amidines comme intermediaires de synthese, en particulier par reduction (synthese d'amines tertiaires par n-alkylation reductrice des nitriles) et par oxydation (heterocycles polyazotes, derives fonctionnalises 1,2)
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Hofseth, Christopher S. "The cuprous ion catalyzed oxidation of cyanide in flow-through porous electrodes." 1993. http://catalog.hathitrust.org/api/volumes/oclc/29041132.html.

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Thesis (Ph. D.)--University of Wisconsin--Madison, 1993.
Typescript. eContent provider-neutral record in process. Description based on print version record. Includes bibliographical references (leaves 210-216).
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7

Wang, Ding-Ce, and 王鼎策. "P-type Cuprous Oxide Thin Film Doped with Alkali Metal Ions for p–n Homojunction Cuprous Oxide Thin Film Solar Cells." Thesis, 2019. http://ndltd.ncl.edu.tw/handle/66p99h.

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碩士
國立東華大學
光電工程學系
107
In this study, p–n homojunction cuprous oxide thin film solar cells were grown on indium-doped tin-oxide (ITO) substrates by using the electrochemical deposition method. The electrolyte for depositing a p-type cuprous oxide thin film is prepared by using three different alkali metal hydroxides of lithium hydroxide, sodium hydroxide and potassium hydroxide. Desirable to improve the conductivity of the p-type cuprous oxide thin film by alkali metal ions doped. Further improve the efficiency of p–n homojunction cuprous oxide thin film solar cells. The p-type cuprous oxide thin film deposited by lithium hydroxide has lower lattice distortion and less lattice defects. Benefit from the improvement of the crystal structure of p-type cuprous oxide thin film, the p–n homojunction cuprous oxide thin film solar cells grown with lithium hydroxide has an optimum fill-factor of 0.34 and efficiency of 0.43%. Proof from experimental results, lithium ion doping can effectively improve the crystal structure of p-type cuprous oxide thin film, and improve the efficiency of p–n homojunction cuprous oxide thin film solar cells.
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Xiao, Zhi-Qian, and 蕭智謙. "Sythesis of p-type Cuprous Oxide Doped with Alkali Metal Ions for Photoelectrochemical Hydrogen Production." Thesis, 2017. http://ndltd.ncl.edu.tw/handle/n5pfae.

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碩士
國立東華大學
光電工程學系
105
In this study, different alkali metal-doped cuprous oxide was prepared on ITO substrates by electrochemical deposition. The electrolyte for electrochemical deposition was prepared with different alkali metal hydroxides and the deposition voltage was -0.4 V at 60 °C for the growth of different morphology of the p-type copper oxide films. And according to Faraday's law of electrolysis, it is known that the amount of electrochemical reaction is proportional to the coulomb number in deposition process. Therefore, the thickness of p-type copper oxide films is controlled by changing the different coulomb numbers in this experiment. First, the thickness of the deposited film was fixed at 0.67 C/cm2. And the alkali metal electrolytes at different pH values were compared with the maximum photocurrent in photoelectrochemical reaction. Then, the photocurrent values of different coulomb numbers in each system were compared. The maximum photocurrent values of lithium hydroxide and potassium hydroxide electrolytes can be obtained at 0.67 C/cm2.And the photoocurrent values are 2.35,1.9,1.62 mA/cm2.There are decreasing between the photocurrents was found, so the difference between the systems was be discussed at 0.67C/cm2. The analysis of material was done first. Difference of the morphology of the material was observed by field emission scanning electron microscopy (FE-SEM). Next, the crystal structure was analyzed by X-ray diffraction (XRD). Then, Raman was used to study the lattice and molecular vibration modes of the material. At last, X-ray photoelectron spectroscopy (XPS) was used to analyze the composition of p-type copper oxide films. The optical and electrical characteristics of p-type copper oxide films also be study. First, the energy gap was analyzed by absorption spectroscopy (ABS). Then, the defects in the structure were detected by photoluminescence (PL). Next, througth Mott-Schottky analysis, measuring the flat band and carrier concentration of them. Calculating photoelectric conversion efficiency with incident photon-to-current efficiency (IPCE) at last. Througth above the analysis, we understand the difference between the three systems, and know that if we want to get the best conversion in photoelectrochemical what should be required. This experiment will be our foundation to study p-type cuprous oxide doped with alkali metal ions for photoelectrochemical hydrogen production in the future.
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Liang, Wan-Ting, and 梁菀婷. "Fabrication of cuprous chloride films by chemical bath deposition using sodium chloride / cupric chloride as the source of chloride ions." Thesis, 2016. http://ndltd.ncl.edu.tw/handle/afr7s9.

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碩士
中原大學
電子工程研究所
104
This research is taking both sodium chloride (NaCl) and copper (II) chloride (CuCl_2) compound as precursor of chloride ions, while CuCl_2 is also taken as precursor of copper ions, and using chemical bath deposition (CBD) to prepare copper (I) chloride (CuCl) films on a copper (Cu) substrate. We prepare CuCl films deposited under different conditions by changing the parameters of the experiment, such as adding concentration, deposition time, hydrochloric acid (HCl) dip, etc. By analyzing their electrical properties, optical properties, phase structure, morphology of the surface, elemental composition and structure layer, we can conduct a systematic comparison to find out the most suitable deposition parameters and researches of their characteristics. Then we compare with the CuCl films prepared by using single CuCl_2 compound as precursor. First, we study the effect on the CuCl film grown with adding different concentrations of NaCl, and compared with the one grown with not adding NaCl. The light emission characteristics, phase structure, morphology of the surface and elemental composition of prepared films have detailed investigated. We can know from the analysis result that a good-quality CuCl film was achieved by CBD via taking NaCl and CuCl_2 compound as precursor of two kinds of ions source. And we confirmed the quality of the film grown with adding NaCl is better than the one without adding NaCl. We can prove the theory that using NaCl compound to increase chloride ions is successful by this result and we have achieved that improving relative ratio of chloride atoms in CuCl film. Next, we study the effect on the CuCl film grown with changing the deposition time of the film and HCl dip times. The light emission characteristics, phase structure, morphology of the surface, elemental composition and structure layer of prepared films have detailed investigated. We found the prepared CuCl-covered layer of simples without changing is flat and continuous from the analysis result. The thickness of the film is about 2 microns and about 1 micron thicker than the one without adding NaCl. Its film layer is pure CuCl crystallites and corresponding elemental distribution is uniform. In addition, although the film grown with extending deposition time of the film and increasing HCl dip times is discontinuous CuCl-covered layer (60min-3dipping and 80min-4dipping), its quality is not worse than the one without adding. So the CuCl film prepared by this changing can adjust its structure layer depending on the demand of devices need to fabricate afterwards. We can prove the theory that increasing the thickness of the film to decrease the formation of Cu^+ is successful by this result and also have achieved that improving relative ratio of chloride atoms in CuCl film. On the other hand, in order to improve the quality of phases of the film, this research also investigated the effect on the CuCl film under different temperature and time of the thermal annealing treatment. The light emission characteristics, phase structure, morphology of the surface, elemental composition and structure layer of prepared films have detailed investigated. We can know from the analysis result that the CuCl films prepared before- and after-annealing are all n-type and find the intensity of light emission, crystalline and contents of chloride on the surface of the film will increase with the temperature increasing (150℃-1hr and 200℃-1hr). And plus, its morphology of the surface also tends to be more flat with temperature and time increasing. We can prove the thermal annealing treatment is helpful to enhance the quality of CuCl film by the analysis results described above. Noticeably, we observed light emission mechanism of exciton and bi-exciton in low temperature photoluminescence (PL) spectra at 5.7K, especially, clearly observed the free exciton related emission at room temperature and this property means the quality of the film is good. The analysis results above have great significance for CuCl used in the fabrication of the diode elements in the future. Keywords: Sodium chloride (NaCl), copper (II) chloride (CuCl_2), copper (I) chloride (CuCl), chemical bath deposition (CBD), copper (Cu) substrate. *: The author **: The advisors
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Dhakal, Dileep. "Growth Monitoring of Ultrathin Copper and Copper Oxide Films Deposited by Atomic Layer Deposition." Doctoral thesis, 2016. https://monarch.qucosa.de/id/qucosa%3A19801.

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Atomic layer deposition (ALD) of copper films is getting enormous interest. Ultrathin Cu films are applied as the seed layer for electrochemical deposition (ECD) of copper in interconnect circuits and as the non-magnetic material for the realization of giant magnetoresistance (GMR) sensors. Particularly, Co/Cu multi-layered structures require sub 4.0 nm copper film thickness for obtaining strong GMR effects. The physical vapor deposition process for the deposition of the copper seed layers are prone to non-conformal coating and poor step coverage on side-walls and bottoms of trenches and vias, and presence of overhanging structures. This may cause failure of interconnections due to formation of voids after copper ECD. ALD is the most suitable technology for the deposition of conformal seed layers for the subsequent ECD in very high aspect ratio structures, also for the technology nodes below 20 nm. Surface chemistry during the ALD of oxides is quite well studied. However, surface chemistry during the ALD of pure metal is rather immature. This knowledge is necessary to optimize the process parameters, synthesize better precursors systems, and enhance the knowledge of existing metal ALD processes. The major goal of this work is to understand the surface chemistry of the used precursor and study the growth of ultrathin copper films using in-situ X-ray photoelectron spectroscopy (XPS). Copper films are deposited by ALD using the precursor mixture consisting of 99 mol% [(nBu3P)2Cu(acac)], as copper precursor and 1 mol% of Ru(η5 C7H11)(η5 C5H4SiMe3), as ruthenium precursor. The purpose in having catalytic amount of ruthenium precursor is to obtain the Ru doped Cu2O layers for subsequent reduction with formic acid at temperatures below 150 °C on arbitrary substrates. Two different approaches for the growth of ultrathin copper films have been studied in this dissertation. In the first approach, direct thermal ALD of copper has been studied by using H2 as co-reactant on Co as catalytic substrate. In the second approach, Ru-doped Cu2O is deposited by ALD using wet-O2 as co-reactant on SiO2 as non-catalytic substrate. The Ru-doped Cu2O is successfully reduced by using either formic acid or carbon-monoxide on SiO2.
Atomlagenabscheidung (ALD) von Kupfer steht im Fokus der ALD Gemeinschaft. Ultradünne Kupferschichten können als Keimschicht für die elektrochemische Abscheidung (ECD) von Kupfer in der Verbindungstechnologie eingesetzt werden. Sie können ebenfalls für Sensoren, welche auf den Effekt des Riesenmagnetowiderstandes (GMR) basieren, als nicht-ferromagnetische Zwischenschicht verwendet werden. Insbesondere Multischichtstrukturen aus ferromagnetische Kobalt und Kupfer erfordern Schichtdicken von weniger als 4,0 nm, um einen starken GMR-Effekt zu gewährleisten. Das derzeit verwendete physikalische Dampfabscheidungsverfahren für ultradünne Kupferschichten, ist besonders anfällig für eine nicht-konforme Abscheidung an den Seitenwänden und Böden von Strukturen mit hohem Aspektverhältnis. Des Weiteren kann es zur Bildung von Löchern und überhängenden Strukturen kommen, welche bei der anschließenden Kupfer ECD zu Kontaktlücken (Voids) führen können. Für die Abscheidung einer Kupfer-Keimschicht ist die ALD besonders gut geeignet, da sie es ermöglicht, ultradünne konforme Schichten auf strukturierten Oberflächen mit hohem Aspektverhältnis abzuscheiden. Dies macht sie zu einer der Schlüsseltechnologien für Struckturgrößen unter 20 nm. Im Gegensatz zur Oberflächenchemie rein metallischer ALD sind die Oberflächenreaktionen für oxidische ALD Schichten sehr gut untersucht. Die Kenntnis der Oberflächenchemie während eines ALD Prozesses ist essenziel für die Bestimmung von wichtigen Prozessparametern als auch für die Verbesserung der Präkursorsynthese ansich. Diese Arbeit beschäftigt sich mit der Untersuchung der Oberflächenchemie und Charakterisierung des Wachstums von ultradünnen Metall-Cu-Schichten mittels In-situ XPS, welche eines indirekten (Oxid) bzw. direkten Metall-ALD Prozesses abgeschieden werden, wobei die Kupfer-Oxidschichten im Anschluss einem Reduktionsprozess unterworfen werden. Hierfür wird eine Präkursormischung bestehend aus 99 mol% [(nBu3P)2Cu(acac)] und 1 mol% [Ru(η5 C7H11)(η5-C5H4SiMe3)] verwendet. Die katalytische Menge an Ru, welche in der entstehenden Cu2O Schicht verbleibt, erhöht den Effekt der Reduktion der Cu2O Schicht auf beliebigen Substraten mit Ameinsäure bei Wafertemperaturen unter 150 °C. In einem ersten Schritt wird ein direkter thermisches Kupfer ALD-Prozess, unter Verwendung von molekularem Wasserstoff als Coreaktant, auf einem Kobalt-Substrat untersucht. In einem zweiten Schritt wird ein indirekter thermischer Cu2O-ALD-Prozess, unter gleichzeitiger Verwendung von Sauerstoff und Wasserdampf als Coreaktant, mit anschließender Reduktion durch Ameinsäure oder Kohlenstoffmonoxid zu Kupfer auf den gleichen Substraten betrachtet. Die vorliegende Arbeit beschreibt das Wachstum von ultradünnen und kontinuierlichen Kupfer-Schichten mittels thermischer ALD auf inerten- SiO2 und reaktiven Kobalt-Substraten.
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Book chapters on the topic "Cuprous ion"

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DeShazer, L. G. "Cuprous Ion Doped Crystals for Tunable Lasers." In Tunable Solid State Lasers, 91–95. Berlin, Heidelberg: Springer Berlin Heidelberg, 1985. http://dx.doi.org/10.1007/978-3-540-39236-1_14.

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Ueta, Masayasu, Hiroshi Kanzaki, Koichi Kobayashi, Yutaka Toyozawa, and Eiichi Hanamura. "The Exciton and Excitonic Molecule in Cuprous Halides." In Excitonic Processes in Solids, 116–202. Berlin, Heidelberg: Springer Berlin Heidelberg, 1986. http://dx.doi.org/10.1007/978-3-642-82602-3_3.

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Stolz, Heinrich. "Resonant light scattering of exciton-polaritions in cuprous oxide." In Springer Tracts in Modern Physics, 150–66. Berlin, Heidelberg: Springer Berlin Heidelberg, 1994. http://dx.doi.org/10.1007/bfb0045277.

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Marathey, Priyanka, Biren Patel, Ranjan Pati, Indrajit Mukhopadhyay, and Abhijit Ray. "Photoelectrochemical Water Splitting Characteristics of Electrodeposited Cuprous Oxide with Protective Over Layers." In Advances in Energy Research, Vol. 1, 231–37. Singapore: Springer Singapore, 2020. http://dx.doi.org/10.1007/978-981-15-2666-4_23.

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Klochko, N. P., K. S. Klepikova, D. O. Zhadan, V. R. Kopach, Y. R. Kostyuchenko, I. V. Khrypunova, V. M. Lyubov, et al. "Transport Properties of Cubic Cuprous Iodide Films Deposited by Successive Ionic Layer Adsorption and Reaction." In Springer Proceedings in Physics, 19–30. Singapore: Springer Singapore, 2020. http://dx.doi.org/10.1007/978-981-15-1742-6_3.

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Hammura, K., K. Sakai, and M. Seyama. "Identification of fine structures of magneto-oscillatory spectra in cuprous oxide as quantum manifestation of classical non-integrability." In Springer Proceedings in Physics, 117–18. Berlin, Heidelberg: Springer Berlin Heidelberg, 2001. http://dx.doi.org/10.1007/978-3-642-59484-7_49.

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Wilczek, G., A. Babczynska, P. Kramarz, R. Laskowski, and P. Migula. "The Effect of Zinc on Detoxifying Enzymes in the Ground Beetle Poecilus Cupreus." In Biomarkers: A Pragmatic Basis for Remediation of Severe Pollution in Eastern Europe, 316. Dordrecht: Springer Netherlands, 1999. http://dx.doi.org/10.1007/978-94-011-4550-3_27.

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Nissan, Ephraim, and Jihad El-Sana. "A Retrospective of a Pioneering Project. Earlier Than XML, Other Than SGML, Still Going: CuProS Metadata for Deeply Nested Relations and Navigating for Retrieval in RAFFAELLO." In Lecture Notes in Computer Science, 425–583. Berlin, Heidelberg: Springer Berlin Heidelberg, 2014. http://dx.doi.org/10.1007/978-3-642-45321-2_20.

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Nash, Eugene B., and Rainer Wilbrand. "Cuprum." In Leitsymptome in der homöopathischen Therapie. Stuttgart: Georg Thieme Verlag, 2015. http://dx.doi.org/10.1055/b-0036-138611.

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"Nr. 19 Cuprum arsenicosum, Cu₃(AsO₃)₂." In Antlitzanalyse in der Biochemie nach Dr. Schüßler, edited by Thomas Feichtinger and Susana Niedan-Feichtinger. Stuttgart: Georg Thieme Verlag, 2018. http://dx.doi.org/10.1055/b-0037-148028.

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Conference papers on the topic "Cuprous ion"

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KRISHANTHA, D. M. M., R. M. G. RAJAPAKSE, D. T. B. TENNAKOON, W. M. A. T. BANDARA, and P. N. L. THILAKARATHNA. "Cuprous Ion Conducting Montmorillonite- Polypyrrole Nanocomposites." In Proceedings of the 10th Asian Conference. WORLD SCIENTIFIC, 2006. http://dx.doi.org/10.1142/9789812773104_0020.

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Emura, S. "Local lattice instability of cuprous ions in NaBr and NaCl." In Physics in local lattice distortions. AIP, 2001. http://dx.doi.org/10.1063/1.1363090.

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Mutasim, Zaher Z., and Lulu L. Hsu. "Evaluation of Thermal-Sprayed Bronze Abradable Coatings: Effect of Temperature and Time on Coating Microstructure and Performance." In ASME 1993 International Gas Turbine and Aeroengine Congress and Exposition. American Society of Mechanical Engineers, 1993. http://dx.doi.org/10.1115/93-gt-371.

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Metallurgical evaluation was conducted on thermally-sprayed bronze coatings that are commonly found in gas turbine labyrinth seals. These bronze coatings serve as abradable surfaces for air/air and air/oil seals operating at low temperatures. As-coated and post-oxidation coating microstructures were examined metallographically to establish the coating’s functional life at various operating temperature ranges. Oxidation tests at several temperatures and times were carried out in order to construct a time-temperature map that could be used to predict the useful life of this bronze coating as correlated to gas turbine bronze seals returned from field service. Scanning electron microscopy in conjunction with polarized light microscopy were utilized to identify the presence of red cuprous oxide, a key factor in the determining the extent of internal oxidation.
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Vignesh, V., Rishabh Raj, Sonika Obheroi, and R. Navamathavan. "The effect of oxygen partial pressures on the formation of cuprous oxide thin films for optoelectronic applications." In Frontiers in Optics. Washington, D.C.: OSA, 2015. http://dx.doi.org/10.1364/fio.2015.jtu4a.22.

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Denala, D., M. Khalil, and T. A. Ivandini. "Preparation of boron doped diamond modified with cuprous oxide as working electrode for electroreduction of CO2." In PROCEEDINGS OF THE 4TH INTERNATIONAL SYMPOSIUM ON CURRENT PROGRESS IN MATHEMATICS AND SCIENCES (ISCPMS2018). AIP Publishing, 2019. http://dx.doi.org/10.1063/1.5132484.

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KAZLAUSKAITĖ, Sonata, Povilas MULERČIKAS, Vytautas TAMUTIS, Audronė ŽEBRAUSKIENĖ, and Elena SURVILIENĖ. "DISTRIBUTION AND DYNAMICS OF THE GROUND BEETLE (COLEOPTERA, CARABIDAE) AND THE CLICK BEETLE (COLEOPTERA, ELATERIDAE) SPECIES ABUNDANCE IN ORGANIC AND INTENSIVELY CULTIVATED CEREAL CROPS." In Rural Development 2015. Aleksandras Stulginskis University, 2015. http://dx.doi.org/10.15544/rd.2015.061.

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The research has been carried out in 2013–2014 in an organic farm located in Medsėdžiai village, Klaipėda district, and intensive farm located in Laiviai village, Kretinga district. Four agrocenoses have been investigated: wheat, triticale, oat, and multiannual grassland. Five pitfall traps were set out in each of agrocenosis and the traps were active from the last decade of April until the last decade of August. Ground beetle adults that were detected during the study belonged to 27 species and 15 genera. The most abundant ground beetle species were Poecilus cupreus L., Pterostichus melаnаrius Ill, Аmаrа аeneа Deg, Cаrаbus cаncellаtus Ill., Hаrpаlus rufipes Deg., Аnchomenus dorsаlis Pontop. and Bembidion properаns Steph., representatives of which were detected in large numbers in all without an exception investigated agrocenoses and in both types of farming. Two seasonal activity peaks of P. cupreus L. abundance were distinguished in the organic farm: first in the beginning of June and the second in the mid-July. Meanwhile, in the intensive farm it was observed in late May. Click beetle adults, identified in the study, were prescribed to 6 species and 4 genera. The most abundant click beetle species were Agriotes obscurus L., Agriotes lineatus L. and Agriotes sputator L. which occurred without an exception in all the agrocenoses and both types of farms. It was determined that the highest click beetle adults’ activity in the intensive farm was observed in the end of July while the maximum of click beetle adults’ activity in the organic farm was defined in June.
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Potera, P. "Time decay of stable absorption of gamma irradiated lithium niobate crystal doped by cuprum ions." In 2012 IEEE International Conference on Oxide Materials for Electronic Engineering (OMEE). IEEE, 2012. http://dx.doi.org/10.1109/omee.2012.6464803.

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Girard, Adam R., Jinsub Kim, and Seung M. You. "Pool Boiling Heat Transfer of Water on Hydrophilic Surfaces With Different Wettability." In ASME 2016 International Mechanical Engineering Congress and Exposition. American Society of Mechanical Engineers, 2016. http://dx.doi.org/10.1115/imece2016-67294.

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The effect of wettability on boiling heat transfer (BHT) coefficient and critical heat flux (CHF) in pool boiling of water on hydrophilic surfaces having different contact angles was investigated. Hot alkali solutions were utilized to promote cupric and cuprous oxide growth which exhibited micro and nanoscale structures on copper surfaces, with thicknesses on the order of a couple of micrometers. These structure and surface energy variations result in different levels of wettability and roughness while maintaining the effusivity of the bare copper surface. The study showed that the BHT coefficient has an inverse relationship to wettability; the BHT coefficient decreases as wettability increases. Furthermore, it was shown that this dependency between BHT coefficient and wettability is more significant than the relationship between BHT coefficient and surface roughness. The CHF was also found to increase with increases in wettability and roughness. For the most hydrophilic surface tested in this study, CHF values were recorded near the 2,000 kW/m2 mark. This value is compared with maximum values reported in literature for water on non-structured flat surfaces without area enhancements. Based on these results it is postulated that there exists a true hydrodynamic CHF limit for pool boiling with water on flat surfaces, very near 2,000 kW/m2, independent of heater material, representing an 80% increase in the limit suggested by Zuber [1].
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Carvajal-Mariscal, Ignacio, Florencio Sanchez-Silva, Georgiy Polupan, and Yevgen Pysmennyy. "Statistical Model of Operational Parameter Influence on Thermal Contact Resistance in Bimetallic L-Type Finned Tubes." In ASME 2008 Heat Transfer Summer Conference collocated with the Fluids Engineering, Energy Sustainability, and 3rd Energy Nanotechnology Conferences. ASMEDC, 2008. http://dx.doi.org/10.1115/ht2008-56441.

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Statistical model development of operational parameter influence on Thermal Contact Resistance (TCR) in bimetallic L-type finned tubes is presented in this work. The Group Method of Data Handling (GMDH) scheme was utilized to develop a correlation that encompasses most important operational parameters including variation of temperature difference between hot inner flow and cooling air, influence of maximum operational temperature, and effect of repeated heating-cooling cycles. Using experimental data obtained on Cuprum-Aluminum L-type finned tubes and special calculations with the help of the developed model formulae, have permitted the estimating of degree of every parameter influence upon final function. It was found that maximum operational temperature has most influence on the TCR. Such results may be useful for a practical thermal design, and operation of heat exchangers based on bimetallic L-type finned tubes.
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Stolberg, Lorne, Hugh A. Boniface, Stacey McMahon, Sam Suppiah, and Sandra York. "Electrolysis of the CuCl/HCl Aqueous System for the Production of Nuclear Hydrogen." In Fourth International Topical Meeting on High Temperature Reactor Technology. ASMEDC, 2008. http://dx.doi.org/10.1115/htr2008-58084.

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The copper-chlorine (Cu-Cl) thermochemical cycle uses both heat and electricity to carry out a series of chemical and electrochemical reactions with the net reaction being the splitting of water into hydrogen and oxygen. The process forms a closed loop with all intermediate chemicals being recycled. All of the chemical and electrochemical reactions can be carried out at temperatures that do not exceed about 530°C. Thus, the heat requirement of this process can be satisfied by intermediate temperature nuclear reactors such as the Super Critical Water Reactor (SCWR) developed in Canada by Atomic Energy of Canada Limited (AECL). AECL is particularly interested in developing the electrochemical reactions that comprise the Cu-Cl cycle. There are two variations on the Cu-Cl cycle. In the original cycle copper metal is produced electrochemically by the disproportionation of cuprous chloride (CuCl), which is dissolved in hydrochloric acid (HCl) electrolyte. It is expected that this reaction will be carried out at a temperature that is below 100°C. Hydrogen gas is then produced by a chemical reaction that takes place between the copper metal and gaseous HCl at a temperature of 430–475°C. It was recognized by AECL that these two reaction steps could be replaced by a single electrochemical reaction that generates hydrogen directly. It is expected that this step will also be carried out at a temperature below 100°C. In this process, referred to as the CuCl/HCl electrolysis step, hydrogen gas is produced at the cathode of an electrochemical cell by the reduction of protons that are supplied by aqueous 6 M HCl while cupric chloride (CuCl2) is produced at the anode by the oxidation of CuCl, which is dissolved in 6 M HCl. The CuCl2 that is formed is recycled and is used in a reaction with steam at 400°C to produce a copper oxychloride. This reaction is common to both versions of the Cu-Cl cycle. It is the purpose of this paper to present electrochemical results from both half-cell and single-cell studies carried out to verify and understand the CuCl/HCl electrolysis step. Half-cell electrochemical data is presented that demonstrates the practicality of the electrode reactions. Electrochemical data is presented to show that the CuCl/HCl electrolysis step can be carried out in a single-cell. In both the half-cell and single-cell experiments platinum electrocatalysts are used to carry out the desired reactions.
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