Relevant bibliographies by topics / CVD/ALD

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  1. Journal articles
  2. Dissertations / Theses
  3. Books
  4. Book chapters
  5. Conference papers
  6. Reports

Academic literature on the topic 'CVD/ALD'

Author: Grafiati
Published: 4 June 2021
Last updated: 16 February 2022

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Journal articles on the topic "CVD/ALD"

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Kurek, Agnieszka, Peter G. Gordon, Sarah Karle, Anjana Devi, and Seán T. Barry. "Recent Advances Using Guanidinate Ligands for Chemical Vapour Deposition (CVD) and Atomic Layer Deposition (ALD) Applications." Australian Journal of Chemistry 67, no. 7 (2014): 989. http://dx.doi.org/10.1071/ch14172.

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Volatile metal complexes are important for chemical vapour deposition (CVD) and atomic layer deposition (ALD) to deliver metal components to growing thin films. Compounds that are thermally stable enough to volatilize but that can also react with a specific substrate are uncommon and remain unknown for many metal centres. Guanidinate ligands, as discussed in this review, have proven their utility for CVD and ALD precursors for a broad range of metal centres. Guanidinate complexes have been used to deposit metal oxides, metal nitrides and pure metal films by tuning process parameters. Our revie
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McInerney, Edward J. "Reactant utilization in CVD and ALD chambers." Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 35, no. 1 (2017): 01B138. http://dx.doi.org/10.1116/1.4972773.

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Crutchley, Robert J. "CVD and ALD precursor design and application." Coordination Chemistry Reviews 257, no. 23-24 (2013): 3153. http://dx.doi.org/10.1016/j.ccr.2013.08.006.

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Ciftyurek, Wilken, Zanders, Mai, Devi, and Schierbaum. "Monitoring Surface Stoichiometry, Work Function and Valance Band of Tungsten Oxide (WO3), Molybdenum Oxide (MoO3) and Tin Oxide (SnO2) Thin Films as a Function of Temperature and Oxygen Partial Pressure with Advanced Surface Sensitive Techniques for Chemical Sensing Applications." Proceedings 14, no. 1 (2019): 27. http://dx.doi.org/10.3390/proceedings2019014027.

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Fraga, Mariana, and Rodrigo Pessoa. "Progresses in Synthesis and Application of SiC Films: From CVD to ALD and from MEMS to NEMS." Micromachines 11, no. 9 (2020): 799. http://dx.doi.org/10.3390/mi11090799.

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A search of the recent literature reveals that there is a continuous growth of scientific publications on the development of chemical vapor deposition (CVD) processes for silicon carbide (SiC) films and their promising applications in micro- and nanoelectromechanical systems (MEMS/NEMS) devices. In recent years, considerable effort has been devoted to deposit high-quality SiC films on large areas enabling the low-cost fabrication methods of MEMS/NEMS sensors. The relatively high temperatures involved in CVD SiC growth are a drawback and studies have been made to develop low-temperature CVD pro
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Xia, Xueming, Alaric Taylor, Yifan Zhao, Stefan Guldin, and Chris Blackman. "Use of a New Non-Pyrophoric Liquid Aluminum Precursor for Atomic Layer Deposition." Materials 12, no. 9 (2019): 1429. http://dx.doi.org/10.3390/ma12091429.

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An Al2O3 thin film has been grown by vapor deposition using different Al precursors. The most commonly used precursor is trimethylaluminum, which is highly reactive and pyrophoric. In the purpose of searching for a more ideal Al source, the non-pyrophoric aluminum tri-sec-butoxide ([Al(OsBu)3], ATSB) was introduced as a novel precursor for atomic layer deposition (ALD). After demonstrating the deposition of Al2O3 via chemical vapor deposition (CVD) and ‘pulsed CVD’ routes, the use of ATSB in an atomic layer deposition (ALD)-like process was investigated and optimized to achieve self-limiting g
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Vasilyev, V. Yu, N. B. Morozova, T. V. Basova, I. K. Igumenov, and A. Hassan. "Chemical vapour deposition of Ir-based coatings: chemistry, processes and applications." RSC Advances 5, no. 41 (2015): 32034–63. http://dx.doi.org/10.1039/c5ra03566j.

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Han, J. H., and C. S. Hwang. "(Invited) ALD and Pulsed-CVD of Ru, RuO2, and SrRuO3." ECS Transactions 58, no. 10 (2013): 171–82. http://dx.doi.org/10.1149/05810.0171ecst.

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Gordon, Peter G., Agnieszka Kurek, and Seán T. Barry. "Trends in Copper Precursor Development for CVD and ALD Applications." ECS Journal of Solid State Science and Technology 4, no. 1 (2014): N3188—N3197. http://dx.doi.org/10.1149/2.0261501jss.

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Delabie, A., M. Caymax, B. Groven, et al. "Low temperature deposition of 2D WS2 layers from WF6 and H2S precursors: impact of reducing agents." Chemical Communications 51, no. 86 (2015): 15692–95. http://dx.doi.org/10.1039/c5cc05272f.

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Dissertations / Theses on the topic "CVD/ALD"

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Schuisky, Mikael. "CVD and ALD in the Bi-Ti-O system." Doctoral thesis, Uppsala University, Department of Chemistry, 2000. http://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-552.

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<p>Bismuth titanate Bi<sub>4</sub>Ti<sub>3</sub>O<sub>12</sub>, is one of the bismuth based layered ferroelectric materials that is a candidate for replacing the lead based ferroelectric materials in for instance non-volatile ferroelectric random access memories (FRAM). This is due to the fact that the bismuth based ferroelectrics consists of pseudo perovskite units sandwiched in between bismuth oxide layers, which gives them a better fatigue nature.</p><p>In this thesis thin films of Bi<sub>4</sub>Ti<sub>3</sub>O<sub>12 </sub>have been deposited by chemical vapour deposition (CVD) using the m
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Forsgren, Katarina. "CVD and ALD of Group IV- and V-Oxides for Dielectric Applications." Doctoral thesis, Uppsala University, Department of Materials Chemistry, 2001. http://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-1415.

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<p>Due to the constantly decreasing dimensions of electronic devices, the conventional dielectric material in transistors and capacitors, SiO<sub>2</sub>, has to be replaced by a material with higher dielectric constant. Some of the most promising candidates are tantalum oxide,Ta<sub>2</sub>O<sub>5</sub>, zirconium oxide, ZrO<sub>2</sub> and hafnium oxide, HfO<sub>2</sub>.</p><p>This thesis describes new chemical vapour deposition (CVD) and atomic layer deposition (ALD) processes for deposition of Ta<sub>2</sub>O<sub>5</sub>, ZrO<sub>2</sub> and HfO<sub>2</sub> using the metal iodides as start
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Forsgren, Katarina. "CVD and ALD of group IV- and V-Oxides for dielectric application /." Uppsala : Acta Universitatis Upsaliensis : Univ.-bibl. [distributör], 2001. http://publications.uu.se/theses/91-554-5143-8/.

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Wu, Xin. "TiO2 Thin Film Interlayer for Organic Photovoltaics." Thesis, The University of Arizona, 2015. http://hdl.handle.net/10150/582369.

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TiO2 films as electron collecting interlayers are important in determining the efficiency of organic photovoltaics (OPVs). Various methods of film deposition have been explored, and they revealed the tradeoff between pinhole free coverage (large shunt resistance) and small film thickness (small series resistance). It is hypothesized that atomic layer deposition (ALD) with its self-limiting nature and sub-nanometer level control would be able to circumvent this problem and provide TiO2 films of pinhole free coverage and small thickness. TiO2 films made by chemical vapor deposition (CVD) and ALD
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Siegert, Uwe. "Silber(I)- und Kupfer(I) – Precursoren für CVD, ALD und Spin-Coating Prozesse." Doctoral thesis, Universitätsbibliothek Chemnitz, 2010. http://nbn-resolving.de/urn:nbn:de:bsz:ch1-201000265.

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Die vorliegende Arbeit beschäftigt sich mit der Synthese von Phosphan-Kupfer(I)- und Silber(I)-Thiocarboxylaten der Art [(nBu3P)mMSC(O)R] (m = 2, 3; M = Cu, Ag; R = Me, Ph). Die Verbindungen wurden in Hinsicht auf ihr Potential zur thermischen Abscheidung dünner Schichten untersucht. Weiterhin befasst sich diese Arbeit mit der Darstellung von Silber(I)- und Kupfer(I)-Carboxylaten, die im organischen Rest mindestens eine zusätzliche Donorfunktion besitzen ([(nBu3P)mMO2CR]; m = 1, 2; M = Ag, Cu; R = ungesättigter organischer Rest, CH2O(CH2)2OCH3). Das thermische Verhalten und die Anwendbarkeit d
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Sundqvist, Jonas. "Employing Metal Iodides and Oxygen in ALD and CVD of Functional Metal Oxides." Doctoral thesis, Uppsala : Acta Universitatis Upsaliensis : Univ.-bibl. [distributör], 2003. http://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-3450.

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Shima, Kohei, Yuan Tu, Bin Han, et al. "Characterization and Process Development of CVD/ALD-based Cu(Mn)/Co(W) Interconnect System." Universitätsbibliothek Chemnitz, 2016. http://nbn-resolving.de/urn:nbn:de:bsz:ch1-qucosa-207279.

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A new materials system of a single layered Co(W) barrier/liner coupled with a Cu(Mn) alloy seed was investigated. Atom probe tomography visualized the sub-nanoscale structure of Cu(Mn)/Co(W) system, and thereby revealed Cu diffusion behavior of Co(W). Grain boundaries of Co were found to be the diffusion path, and successfully stuffed by W. Mn in Cu(Mn) also segregated to stuff the grain boundaries of Co. Combination of these two additives enabled high barrier property against Cu diffusion of Cu(Mn)/Co(W). Foreseeing tiny and high-aspect-ratio Cu interconnect features, Cu(Mn)/Co(W) was fabrica
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Fraccaroli, Mathias. "Synthèse par CVD/ALD sur grandes surfaces d'un sulfure de vanadium transparent et conducteur." Thesis, Université Grenoble Alpes, 2020. http://www.theses.fr/2020GRALT006.

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Dans un contexte de diversification des fonctionnalités sur silicium (more than Moore), les sulfures de transition sont actuellement activement étudiés pour la réalisation de dispositifs optiques originaux. Dans cette famille, certains matériaux présentent une structure lamellaire structurellement semblables au graphène. C'est le cas de certains sulfures de vanadium. La synthèse de ces films lamellaires reste activement dominée par les procédés CVD à haute température (&gt;550°C). Cependant, pour espérer le développement d'une synthèse fiable, il est important de diminuer cette température de
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Karlsson, Matilda. "Framställning av multilagerfilmen AlN-HQ." Thesis, Linköpings universitet, Institutionen för fysik, kemi och biologi, 2021. http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-176218.

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The method Atomic Layer Deposition, ALD, has been available since the 1970´s and it has opened the possibility to fabricate methods for inorganic thin films on a nanoscale. Later the interest for fabricating organic thin films with Molecular Layer Deposition, MLD, and controlling both the thickness and the composition of the film on a molecular scale. To develop the thin films a bit further a combination of organic and inorganic thin films is fabricated and therefore the best properties of the two types of thin films are combined.  The purpose of this bachelor´s thesis was to fabricate the mul
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Cadot, Stéphane. "Élaboration de monocouches de dichalcogénures de métaux de transition du groupe (VI) par chimie organométallique de surface." Thesis, Lyon, 2016. http://www.theses.fr/2016LYSE1075/document.

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Le disulfure de molybdène, MoS2, est un composé lamellaire de la famille des dichalcogénures de métaux de transition utilisé depuis près d'un siècle comme lubrifiant solide et catalyseur d'hydrotraitement. Depuis la découverte en 2010 de ses propriétés de photoluminescence et de conduction (semiconducteur possédant un gap direct) lorsqu'il est isolé à l'état d'une seule monocouche, ce nouveau matériau 2D a suscité un intérêt croissant au sein de la communauté scientifique et permis d'envisager de nombreuses applications dans le domaine de l'énergie ou pour la réalisation de composants électron
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Books on the topic "CVD/ALD"

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Fischer, Roland A. Precursor chemistry of advanced materials: CVD, ALD and nanoparticles. Springer, 2010.

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A, Fischer Roland, ed. Precursor chemistry of advanced materials: CVD, ALD and nanoparticles. Springer, 2005.

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Forsgren, Katarina. Cvd and Ald of Group IV - & V-Oxides for Dielectric Applications. Uppsala Universitet, 2001.

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Yanguas-Gil, Angel. Growth and Transport in Nanostructured Materials: Reactive Transport in PVD, CVD, and ALD. Springer, 2016.

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Fischer, Roland A. Precursor Chemistry of Advanced Materials: CVD, ALD and Nanoparticles (Topics in Organometallic Chemistry) (Topics in Organometallic Chemistry). Springer, 2005.

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Book chapters on the topic "CVD/ALD"

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"Characterization of CVD/ALD layers with impedance sensors." In Lecture Notes on Impedance Spectroscopy. CRC Press, 2012. http://dx.doi.org/10.1201/b12741-17.

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Conference papers on the topic "CVD/ALD"

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Baruwa, Akinsanya Damilare, Esther Titilayo Akinlabi, O. P. Oladijo, Jyotsna Dutta-Majumdar, and Shree Krishna. "Effect of Processing Technique on the Mechanical Properties of a Functionalized Superhydrophobic Silane." In ASME 2019 International Mechanical Engineering Congress and Exposition. American Society of Mechanical Engineers, 2019. http://dx.doi.org/10.1115/imece2019-10715.

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Abstract The need to test for the durability and capability of a coating before being subjected to service is highly important for engineering applications. Ultra-low indentation of nano-hardness and nano-scratch are valuable methods of measuring durability and near-surface mechanical properties of thin films. AISI 304 stainless steel was coated with Repellix superhydrophobic coating using chemical vapor deposition (CVD) and atomic layer deposition (ALD) techniques at constant processing parameters. The deposited films were characterized through nanoindentation, nanoscratch, and water contact
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Hasche, K., M. Hintz, S. Völlmeke, A. Steinke, and I. Tobehn. "Charakterisierung von CVD/ALD Schichten mit Impedanzsensorik." In 10. Dresdner Sensor-Symposium 2011. Forschungsgesellschaft für Messtechnik, Sensorik und Medizintechnik e.V. Dresden, 2011. http://dx.doi.org/10.5162/10dss2011/12.9.

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Erickson, Kathleen, Thuc Dinh, Eric Ellsworth, and Hongxu Duan. "Improved Liquid Source Vaporization for CVD & ALD Precursors." In 2019 30th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC). IEEE, 2019. http://dx.doi.org/10.1109/asmc.2019.8791829.

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Girard, Jean-Marc. "Enablement of cost effective CVD/ALD processing through precursor design." In 2017 IEEE Electron Devices Technology and Manufacturing Conference (EDTM). IEEE, 2017. http://dx.doi.org/10.1109/edtm.2017.7947505.

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Rossnagel, S. M., and H. Kim. "From PVD to CVD to ALD for interconnects and related applications." In Proceedings of the IEEE 2001 International Interconnect Technology Conference. IEEE, 2001. http://dx.doi.org/10.1109/iitc.2001.929999.

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Wu, Xiangyu, Dennis Lin, Daire Cott, et al. "ALD Encapsulation of CVD WS2 for Stable and High-Performance FET Devices." In 2021 5th IEEE Electron Devices Technology & Manufacturing Conference (EDTM). IEEE, 2021. http://dx.doi.org/10.1109/edtm50988.2021.9420940.

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Pokoj, Michael, Igor Nemeth, Kerstin Volz, et al. "Novel Ta-precursors for the CVD and ALD of TaNx diffusion barrier layers." In 2007 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 2007. http://dx.doi.org/10.7567/ssdm.2007.p-2-5.

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Shimizu, Hideharu, Kaoru Sakoda, and Yukihiro Shimogaki. "CVD and ALD of Cobalt-tungsten alloy film as a novel Copper diffusion barrier." In 2011 Materials for Advanced Metallization (MAM). IEEE, 2011. http://dx.doi.org/10.1109/iitc.2011.5940343.

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Davis, Benjamin, Nitin Muralidharan, Cary Pint, and Matthew R. Maschmann. "Electrically Addressable Hierarchical Carbon Nanotube Forests." In ASME 2016 International Mechanical Engineering Congress and Exposition. American Society of Mechanical Engineers, 2016. http://dx.doi.org/10.1115/imece2016-67226.

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Hierarchical, branched carbon nanotube (CNT) forest assemblies were created by synthesizing a second generation of CNTs directly from the alumina-coated surface of a parent CNT forest. First, a parent CNT forest generation was synthesized using floating catalyst chemical vapor deposition (CVD) in which gaseous argon and hydrogen are flowed into a tube furnace, along with a controlled flow rate of ferrocene nanoparticles suspended in xylene solvent. Next, a thin alumina coating was applied to the parent CNT forest using atomic layer deposition (ALD). The ALD process pulses alternating gases of
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Choi, S. M., K. C. Park, B. S. Suh, et al. "Process integration of CVD Cu seed using ALD Ru glue layer for sub-65nm Cu interconnect." In Digest of Technical Papers. 2004 Symposium on VLSI Technology, 2004. IEEE, 2004. http://dx.doi.org/10.1109/vlsit.2004.1345395.

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Reports on the topic "CVD/ALD"

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Checchin, Mattia. Versatile CVD/ALD system. Office of Scientific and Technical Information (OSTI), 2020. http://dx.doi.org/10.2172/1615354.

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Journal articles Dissertations / Theses
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