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Dissertations / Theses on the topic 'CVD/ALD'

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Published: 4 June 2021
Last updated: 16 February 2022

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1

Schuisky, Mikael. "CVD and ALD in the Bi-Ti-O system." Doctoral thesis, Uppsala University, Department of Chemistry, 2000. http://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-552.

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<p>Bismuth titanate Bi<sub>4</sub>Ti<sub>3</sub>O<sub>12</sub>, is one of the bismuth based layered ferroelectric materials that is a candidate for replacing the lead based ferroelectric materials in for instance non-volatile ferroelectric random access memories (FRAM). This is due to the fact that the bismuth based ferroelectrics consists of pseudo perovskite units sandwiched in between bismuth oxide layers, which gives them a better fatigue nature.</p><p>In this thesis thin films of Bi<sub>4</sub>Ti<sub>3</sub>O<sub>12 </sub>have been deposited by chemical vapour deposition (CVD) using the m
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2

Forsgren, Katarina. "CVD and ALD of Group IV- and V-Oxides for Dielectric Applications." Doctoral thesis, Uppsala University, Department of Materials Chemistry, 2001. http://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-1415.

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<p>Due to the constantly decreasing dimensions of electronic devices, the conventional dielectric material in transistors and capacitors, SiO<sub>2</sub>, has to be replaced by a material with higher dielectric constant. Some of the most promising candidates are tantalum oxide,Ta<sub>2</sub>O<sub>5</sub>, zirconium oxide, ZrO<sub>2</sub> and hafnium oxide, HfO<sub>2</sub>.</p><p>This thesis describes new chemical vapour deposition (CVD) and atomic layer deposition (ALD) processes for deposition of Ta<sub>2</sub>O<sub>5</sub>, ZrO<sub>2</sub> and HfO<sub>2</sub> using the metal iodides as start
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3

Forsgren, Katarina. "CVD and ALD of group IV- and V-Oxides for dielectric application /." Uppsala : Acta Universitatis Upsaliensis : Univ.-bibl. [distributör], 2001. http://publications.uu.se/theses/91-554-5143-8/.

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4

Wu, Xin. "TiO2 Thin Film Interlayer for Organic Photovoltaics." Thesis, The University of Arizona, 2015. http://hdl.handle.net/10150/582369.

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TiO2 films as electron collecting interlayers are important in determining the efficiency of organic photovoltaics (OPVs). Various methods of film deposition have been explored, and they revealed the tradeoff between pinhole free coverage (large shunt resistance) and small film thickness (small series resistance). It is hypothesized that atomic layer deposition (ALD) with its self-limiting nature and sub-nanometer level control would be able to circumvent this problem and provide TiO2 films of pinhole free coverage and small thickness. TiO2 films made by chemical vapor deposition (CVD) and ALD
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5

Siegert, Uwe. "Silber(I)- und Kupfer(I) – Precursoren für CVD, ALD und Spin-Coating Prozesse." Doctoral thesis, Universitätsbibliothek Chemnitz, 2010. http://nbn-resolving.de/urn:nbn:de:bsz:ch1-201000265.

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Die vorliegende Arbeit beschäftigt sich mit der Synthese von Phosphan-Kupfer(I)- und Silber(I)-Thiocarboxylaten der Art [(nBu3P)mMSC(O)R] (m = 2, 3; M = Cu, Ag; R = Me, Ph). Die Verbindungen wurden in Hinsicht auf ihr Potential zur thermischen Abscheidung dünner Schichten untersucht. Weiterhin befasst sich diese Arbeit mit der Darstellung von Silber(I)- und Kupfer(I)-Carboxylaten, die im organischen Rest mindestens eine zusätzliche Donorfunktion besitzen ([(nBu3P)mMO2CR]; m = 1, 2; M = Ag, Cu; R = ungesättigter organischer Rest, CH2O(CH2)2OCH3). Das thermische Verhalten und die Anwendbarkeit d
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6

Sundqvist, Jonas. "Employing Metal Iodides and Oxygen in ALD and CVD of Functional Metal Oxides." Doctoral thesis, Uppsala : Acta Universitatis Upsaliensis : Univ.-bibl. [distributör], 2003. http://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-3450.

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7

Shima, Kohei, Yuan Tu, Bin Han, et al. "Characterization and Process Development of CVD/ALD-based Cu(Mn)/Co(W) Interconnect System." Universitätsbibliothek Chemnitz, 2016. http://nbn-resolving.de/urn:nbn:de:bsz:ch1-qucosa-207279.

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A new materials system of a single layered Co(W) barrier/liner coupled with a Cu(Mn) alloy seed was investigated. Atom probe tomography visualized the sub-nanoscale structure of Cu(Mn)/Co(W) system, and thereby revealed Cu diffusion behavior of Co(W). Grain boundaries of Co were found to be the diffusion path, and successfully stuffed by W. Mn in Cu(Mn) also segregated to stuff the grain boundaries of Co. Combination of these two additives enabled high barrier property against Cu diffusion of Cu(Mn)/Co(W). Foreseeing tiny and high-aspect-ratio Cu interconnect features, Cu(Mn)/Co(W) was fabrica
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8

Fraccaroli, Mathias. "Synthèse par CVD/ALD sur grandes surfaces d'un sulfure de vanadium transparent et conducteur." Thesis, Université Grenoble Alpes, 2020. http://www.theses.fr/2020GRALT006.

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Dans un contexte de diversification des fonctionnalités sur silicium (more than Moore), les sulfures de transition sont actuellement activement étudiés pour la réalisation de dispositifs optiques originaux. Dans cette famille, certains matériaux présentent une structure lamellaire structurellement semblables au graphène. C'est le cas de certains sulfures de vanadium. La synthèse de ces films lamellaires reste activement dominée par les procédés CVD à haute température (&gt;550°C). Cependant, pour espérer le développement d'une synthèse fiable, il est important de diminuer cette température de
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9

Karlsson, Matilda. "Framställning av multilagerfilmen AlN-HQ." Thesis, Linköpings universitet, Institutionen för fysik, kemi och biologi, 2021. http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-176218.

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The method Atomic Layer Deposition, ALD, has been available since the 1970´s and it has opened the possibility to fabricate methods for inorganic thin films on a nanoscale. Later the interest for fabricating organic thin films with Molecular Layer Deposition, MLD, and controlling both the thickness and the composition of the film on a molecular scale. To develop the thin films a bit further a combination of organic and inorganic thin films is fabricated and therefore the best properties of the two types of thin films are combined.  The purpose of this bachelor´s thesis was to fabricate the mul
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10

Cadot, Stéphane. "Élaboration de monocouches de dichalcogénures de métaux de transition du groupe (VI) par chimie organométallique de surface." Thesis, Lyon, 2016. http://www.theses.fr/2016LYSE1075/document.

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Le disulfure de molybdène, MoS2, est un composé lamellaire de la famille des dichalcogénures de métaux de transition utilisé depuis près d'un siècle comme lubrifiant solide et catalyseur d'hydrotraitement. Depuis la découverte en 2010 de ses propriétés de photoluminescence et de conduction (semiconducteur possédant un gap direct) lorsqu'il est isolé à l'état d'une seule monocouche, ce nouveau matériau 2D a suscité un intérêt croissant au sein de la communauté scientifique et permis d'envisager de nombreuses applications dans le domaine de l'énergie ou pour la réalisation de composants électron
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11

Piallat, Fabien. "Plasma assisted chemical deposition (CVD/ALD) and integration of Ti(Al)N and Ta(Al)N for sub-20 nm metal gate." Thesis, Grenoble, 2014. http://www.theses.fr/2014GRENT015/document.

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L'intégration du métal dans les nœuds technologiques sub-20 nm requiert une conformité supérieure à celle permise par la PVD. Les techniques de CVD, plus spécifiquement la MOCVD et l'ALD, ont été identifiées comme les meilleures solutions pour le dépôt de métal. Pour une application de métal de grille, les alliages carbo-nitrurés de titane et tantale sont considérés comme les plus prometteurs. Dans ce travail une revue détaillée des mécanismes de dépôt par MOCVD et ALD, ainsi que sur l'influence du plasma sur les matériaux déposés est réalisée. Dans un premier temps, les fenêtres de procédés p
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12

Stará, Veronika. "Dotování grafenu pomocí pomalých elektronů." Master's thesis, Vysoké učení technické v Brně. Fakulta strojního inženýrství, 2018. http://www.nusl.cz/ntk/nusl-382273.

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Tato diplomová práce se zabývá dotováním grafenu nízkoenergiovými elektrony. Na křemíkový substrát pokrytý vrstvou SiO2 jsou pomocí litograficky vyrobené masky nadeponované kovové kontakty z titanu a zlata. Grafen vyrobený pomocí metody depozice z plynné fáze je přenesen na substrát a slouží jako vodivé spojení kovových elektrod, které vytvářejí kolektor a emitor. Na křemík je ze spodu přivedeno napětí, které tak vytváří spodní hradlo. Takto vytvořený grafenový tranzistor je ozařován nízkoenergiovými elektrony, které mění dotování grafenu. Z polohy maxima v závislosti odporu grafenu na hradlov
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13

Lindahl, Erik. "Thin Film Synthesis of Nickel Containing Compounds." Doctoral thesis, Uppsala : Acta Universitatis Upsaliensis, 2009. http://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-111484.

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14

Lorenz, Erik E. "Atomistische Modellierung und Simulation des Filmwachstums bei Gasphasenabscheidungen." Master's thesis, Universitätsbibliothek Chemnitz, 2015. http://nbn-resolving.de/urn:nbn:de:bsz:ch1-qucosa-159520.

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Gasphasenabscheidungen werden zur Produktion dünner Schichten in der Mikro- und Nanoelektronik benutzt, um eine präzise Kontrolle der Schichtdicke im Sub-Nanometer-Bereich zu erreichen. Elektronische Eigenschaften der Schichten werden dabei von strukturellen Eigenschaften determiniert, deren Bestimmung mit hohem experimentellem Aufwand verbunden ist. Die vorliegende Arbeit erweitert ein hochparalleles Modell zur atomistischen Simulation des Wachstums und der Struktur von Dünnschichten, welches Molekulardynamik (MD) und Kinetic Monte Carlo-Methoden (KMC) kombiniert, um die Beschreibung beliebig
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15

Roy, Amit Kumar. "Atomic Layer Deposition onto Fibers." Doctoral thesis, Universitätsbibliothek Chemnitz, 2012. http://nbn-resolving.de/urn:nbn:de:bsz:ch1-qucosa-85451.

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The main goal of this dissertation was to show that the principle of atomic layer deposition (ALD) can be applied to “endless” fibers. A reactor of atomic layer deposition has been designed, especially for coating depositions onto meter long bundles of fibers. Aluminum oxide (alumina), titanium oxide (titania), double layers of alumina and titania, as well as aluminium phosphate have been deposited onto bundles of carbon fibers using the home-built reactor. Scanning electron microscopic (SEM) and transmission electron microscopic (TEM) images indicate that the coatings were uniform and conform
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16

Lorenz, Erik E. "Atomistische Modellierung und Simulation des Filmwachstums bei Gasphasenabscheidungen." Master's thesis, Fraunhofer ENAS, 2014. https://monarch.qucosa.de/id/qucosa%3A20181.

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Gasphasenabscheidungen werden zur Produktion dünner Schichten in der Mikro- und Nanoelektronik benutzt, um eine präzise Kontrolle der Schichtdicke im Sub-Nanometer-Bereich zu erreichen. Elektronische Eigenschaften der Schichten werden dabei von strukturellen Eigenschaften determiniert, deren Bestimmung mit hohem experimentellem Aufwand verbunden ist. Die vorliegende Arbeit erweitert ein hochparalleles Modell zur atomistischen Simulation des Wachstums und der Struktur von Dünnschichten, welches Molekulardynamik (MD) und Kinetic Monte Carlo-Methoden (KMC) kombiniert, um die Beschreibung beliebig
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17

Sharma, Varun. "Evaluation of novel metalorganic precursors for atomic layer deposition of Nickel-based thin films." Master's thesis, Saechsische Landesbibliothek- Staats- und Universitaetsbibliothek Dresden, 2015. http://nbn-resolving.de/urn:nbn:de:bsz:14-qucosa-166627.

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Nickel und Nickel (II) -oxid werden in großem Umfang in fortgeschrittenen elektronischen Geräten verwendet. In der Mikroelektronik-Industrie wird Nickel verwendet werden, um Nickelsilizid bilden. Die Nickelmono Silizid (NiSi) wurde als ausgezeichnetes Material für Source-Drain-Kontaktanwendungen unter 45 nm-CMOS-Technologie entwickelt. Im Vergleich zu anderen Siliziden für die Kontaktanwendungen verwendet wird NiSi wegen seines niedrigen spezifischen Widerstand, niedrigen Kontaktwiderstand, relativ niedrigen Bildungstemperatur und niedrigem Siliziumverbrauchs bevorzugt. Nickel in Nickelbasis-A
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18

Siegert, Uwe. "Silber(I)- und Kupfer(I) – Precursoren für CVD, ALD und Spin-Coating Prozesse." Doctoral thesis, 2009. https://monarch.qucosa.de/id/qucosa%3A19279.

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Die vorliegende Arbeit beschäftigt sich mit der Synthese von Phosphan-Kupfer(I)- und Silber(I)-Thiocarboxylaten der Art [(nBu3P)mMSC(O)R] (m = 2, 3; M = Cu, Ag; R = Me, Ph). Die Verbindungen wurden in Hinsicht auf ihr Potential zur thermischen Abscheidung dünner Schichten untersucht. Weiterhin befasst sich diese Arbeit mit der Darstellung von Silber(I)- und Kupfer(I)-Carboxylaten, die im organischen Rest mindestens eine zusätzliche Donorfunktion besitzen ([(nBu3P)mMO2CR]; m = 1, 2; M = Ag, Cu; R = ungesättigter organischer Rest, CH2O(CH2)2OCH3). Das thermische Verhalten und die Anwendbarkeit d
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19

Dagur, Pritesh. "Thin Films From Metalorganic Precursors : ALD Of VO2 And CVD Of (Al1-xGax)2O3." Thesis, 2009. http://hdl.handle.net/2005/668.

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Thin films and coatings of oxides are used in various fields of science and technology, such as semiconductor and optoelectronic devices, gas sensors, protective and wear resistant coatings etc. Of late, there has been a tremendous interest in pure and doped vanadium dioxide as thermoelectric switch material. VO2 has been doped with hetero-atoms such as W, Mo, Nb, Ti etc. and effects of doping have been correlated with feasibility of being used as a smart window material. The oxide Al2O3 has been studied as an alternative gate dielectric. Ga2O3 is also a contender for replacing SiO2 as a diele
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20

Siegert, Uwe [Verfasser]. "Silber(I)- und Kupfer(I)-Precursoren für CVD, ALD und Spin-Coating Prozesse / vorgelegt von Uwe Siegert." 2009. http://d-nb.info/1003603394/34.

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21

Gairola, Anshita. "Studies On CVD And ALD Of Thin Films Of Substituted And Composite Metal Oxides, Including Potential High-k Dielectrics." Thesis, 2011. http://etd.iisc.ernet.in/handle/2005/2104.

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The work carried out as a part of this thesis has been focussed on understanding different aspects of the chemical vapor deposition process namely, ALD / MOCVD. A large part of the thesis is aimed at solving the problem of a single-source precursor for the MOCVD process to obtain substituted metal oxide thin films. For a chemical vapor deposition technique, it is important to understand the requisite salient features of precursor for deposition of thin films. For this purpose, not only is the structural characterization of the chemical precursor is required but also an in-depth thermal analysi
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22

Roy, Amit Kumar. "Atomic Layer Deposition onto Fibers." Doctoral thesis, 2011. https://monarch.qucosa.de/id/qucosa%3A19686.

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The main goal of this dissertation was to show that the principle of atomic layer deposition (ALD) can be applied to “endless” fibers. A reactor of atomic layer deposition has been designed, especially for coating depositions onto meter long bundles of fibers. Aluminum oxide (alumina), titanium oxide (titania), double layers of alumina and titania, as well as aluminium phosphate have been deposited onto bundles of carbon fibers using the home-built reactor. Scanning electron microscopic (SEM) and transmission electron microscopic (TEM) images indicate that the coatings were uniform and conform
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23

Kunte, Girish V. "Vapour Pressure Studies Of Precursors And Atomic Layer Deposition Of Titanium Oxides." Thesis, 2008. http://hdl.handle.net/2005/762.

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This thesis describes the deposition of thin films of titanium oxide and Magnéli phases of titanium oxide by atomic layer deposition (ALD) using a novel β-ketoesterate precursor. Titanium oxide is a promising candidate for the high-k dielectric gate oxide layer for CMOS devices in microelectronic circuits. The Magnéli phases of titanium oxide are difficult to grow and stabilize, especially in the thin film form, and have useful properties. The thin film deposition of oxides by CVD/ALD requires suitable precursors, which are often metalorganic complexes. The estimation of vapour pressure using
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