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Journal articles on the topic 'CVD/ALD'

Author: Grafiati

Published: 4 June 2021

Last updated: 16 February 2022

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1

Kurek, Agnieszka, Peter G. Gordon, Sarah Karle, Anjana Devi, and Seán T. Barry. "Recent Advances Using Guanidinate Ligands for Chemical Vapour Deposition (CVD) and Atomic Layer Deposition (ALD) Applications." Australian Journal of Chemistry 67, no. 7 (2014): 989. http://dx.doi.org/10.1071/ch14172.

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Volatile metal complexes are important for chemical vapour deposition (CVD) and atomic layer deposition (ALD) to deliver metal components to growing thin films. Compounds that are thermally stable enough to volatilize but that can also react with a specific substrate are uncommon and remain unknown for many metal centres. Guanidinate ligands, as discussed in this review, have proven their utility for CVD and ALD precursors for a broad range of metal centres. Guanidinate complexes have been used to deposit metal oxides, metal nitrides and pure metal films by tuning process parameters. Our revie

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2

McInerney, Edward J. "Reactant utilization in CVD and ALD chambers." Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 35, no. 1 (2017): 01B138. http://dx.doi.org/10.1116/1.4972773.

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3

Crutchley, Robert J. "CVD and ALD precursor design and application." Coordination Chemistry Reviews 257, no. 23-24 (2013): 3153. http://dx.doi.org/10.1016/j.ccr.2013.08.006.

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4

Ciftyurek, Wilken, Zanders, Mai, Devi, and Schierbaum. "Monitoring Surface Stoichiometry, Work Function and Valance Band of Tungsten Oxide (WO3), Molybdenum Oxide (MoO3) and Tin Oxide (SnO2) Thin Films as a Function of Temperature and Oxygen Partial Pressure with Advanced Surface Sensitive Techniques for Chemical Sensing Applications." Proceedings 14, no. 1 (2019): 27. http://dx.doi.org/10.3390/proceedings2019014027.

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5

Fraga, Mariana, and Rodrigo Pessoa. "Progresses in Synthesis and Application of SiC Films: From CVD to ALD and from MEMS to NEMS." Micromachines 11, no. 9 (2020): 799. http://dx.doi.org/10.3390/mi11090799.

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A search of the recent literature reveals that there is a continuous growth of scientific publications on the development of chemical vapor deposition (CVD) processes for silicon carbide (SiC) films and their promising applications in micro- and nanoelectromechanical systems (MEMS/NEMS) devices. In recent years, considerable effort has been devoted to deposit high-quality SiC films on large areas enabling the low-cost fabrication methods of MEMS/NEMS sensors. The relatively high temperatures involved in CVD SiC growth are a drawback and studies have been made to develop low-temperature CVD pro

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6

Xia, Xueming, Alaric Taylor, Yifan Zhao, Stefan Guldin, and Chris Blackman. "Use of a New Non-Pyrophoric Liquid Aluminum Precursor for Atomic Layer Deposition." Materials 12, no. 9 (2019): 1429. http://dx.doi.org/10.3390/ma12091429.

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An Al2O3 thin film has been grown by vapor deposition using different Al precursors. The most commonly used precursor is trimethylaluminum, which is highly reactive and pyrophoric. In the purpose of searching for a more ideal Al source, the non-pyrophoric aluminum tri-sec-butoxide ([Al(OsBu)3], ATSB) was introduced as a novel precursor for atomic layer deposition (ALD). After demonstrating the deposition of Al2O3 via chemical vapor deposition (CVD) and ‘pulsed CVD’ routes, the use of ATSB in an atomic layer deposition (ALD)-like process was investigated and optimized to achieve self-limiting g

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7

Vasilyev, V. Yu, N. B. Morozova, T. V. Basova, I. K. Igumenov, and A. Hassan. "Chemical vapour deposition of Ir-based coatings: chemistry, processes and applications." RSC Advances 5, no. 41 (2015): 32034–63. http://dx.doi.org/10.1039/c5ra03566j.

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8

Han, J. H., and C. S. Hwang. "(Invited) ALD and Pulsed-CVD of Ru, RuO2, and SrRuO3." ECS Transactions 58, no. 10 (2013): 171–82. http://dx.doi.org/10.1149/05810.0171ecst.

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9

Gordon, Peter G., Agnieszka Kurek, and Seán T. Barry. "Trends in Copper Precursor Development for CVD and ALD Applications." ECS Journal of Solid State Science and Technology 4, no. 1 (2014): N3188—N3197. http://dx.doi.org/10.1149/2.0261501jss.

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10

Delabie, A., M. Caymax, B. Groven, et al. "Low temperature deposition of 2D WS2 layers from WF6 and H2S precursors: impact of reducing agents." Chemical Communications 51, no. 86 (2015): 15692–95. http://dx.doi.org/10.1039/c5cc05272f.

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11

Kim, Hyo-Suk, Sheby Mary George, Bo Keun Park, Seung Uk Son, Chang Gyoun Kim, and Taek-Mo Chung. "New heteroleptic magnesium complexes for MgO thin film application." Dalton Transactions 44, no. 5 (2015): 2103–9. http://dx.doi.org/10.1039/c4dt03497j.

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Novel magnesium precursors for the ALD/CVD process of MgO thin films were synthesized as heteroleptic complexes. These complexes show high volatility and good thermal properties which proved to be superior to homoleptic parent complexes.

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12

Votta, Annamaria, Francesco Pipia, S. Borsari, et al. "Influence of Wet Cleaning on Tungsten Deposited with Different Techniques." Solid State Phenomena 145-146 (January 2009): 197–200. http://dx.doi.org/10.4028/www.scientific.net/ssp.145-146.197.

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Tungsten is a metal widely used for interconnections. As a consequence of more stringent requirements in terms of aspect ratio deriving from device shrinking, the filling of W plugs is becoming more and more critical and new deposition techniques need to be employed to properly fill contacts and trenches. For example ALD nucleation layers need to be coupled to CVD deposition. Since physical-chemical properties of W are heavily influenced by deposition techniques, the effect of wet cleanings on different kind of W needs to be fully understood in order to avoid any kind of W corrosion or recessi

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13

Yang, Mengdi, Antonius A. I. Aarnink, Alexey Y. Kovalgin, Rob A. M. Wolters, and Jurriaan Schmitz. "Hot-wire assisted ALD of tungsten films:In-situstudy of the interplay between CVD, etching, and ALD modes." physica status solidi (a) 212, no. 7 (2015): 1607–14. http://dx.doi.org/10.1002/pssa.201532305.

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14

Schilirò, Emanuela, Raffaella Lo Nigro, Fabrizio Roccaforte, and Filippo Giannazzo. "Recent Advances in Seeded and Seed-Layer-Free Atomic Layer Deposition of High-K Dielectrics on Graphene for Electronics." C — Journal of Carbon Research 5, no. 3 (2019): 53. http://dx.doi.org/10.3390/c5030053.

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Graphene (Gr) with its distinctive features is the most studied two-dimensional (2D) material for the new generation of high frequency and optoelectronic devices. In this context, the Atomic Layer Deposition (ALD) of ultra-thin high-k insulators on Gr is essential for the implementation of many electronic devices. However, the lack of out-of-plane bonds in the sp2 lattice of Gr typically hinders the direct ALD growth on its surface. To date, several pre-functionalization and/or seed-layer deposition processes have been explored, to promote the ALD nucleation on Gr. The main challenge of these

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15

Xie, Haifen, Keke Wang, Zhiqiang Zhang, Xiaojing Zhao, Feng Liu, and Haichuan Mu. "Temperature and thickness dependence of the sensitivity of nitrogen dioxide graphene gas sensors modified by atomic layer deposited zinc oxide films." RSC Advances 5, no. 36 (2015): 28030–37. http://dx.doi.org/10.1039/c5ra03752b.

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The Chemical Vapor Deposition (CVD) grown graphene nitrogen dioxide (NO<sub>2</sub>) gas sensors modified by zinc oxide (ZnO) thin films via atomic layer deposition (ALD) were fabricated and their sensitivity dependence on the temperature and ZnO film thickness was investigated.

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16

Lindahl, Erik, Mikael Ottosson, and Jan-Otto Carlsson. "Growth and stability of CVD Ni3N and ALD NiO dual layers." Surface and Coatings Technology 205, no. 3 (2010): 710–16. http://dx.doi.org/10.1016/j.surfcoat.2010.07.059.

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17

Lee, Seung-Mo, Eckhard Pippel, and Mato Knez. "Metal Infiltration into Biomaterials by ALD and CVD: A Comparative Study." ChemPhysChem 12, no. 4 (2011): 791–98. http://dx.doi.org/10.1002/cphc.201000923.

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18

Iwanaga, Kohei, Ken-ichi Tada, Hirokazu Chiba, et al. "Development of Novel Silicon Precursors for Low-Temperature CVD/ALD Processes." ECS Transactions 41, no. 2 (2019): 211–18. http://dx.doi.org/10.1149/1.3633670.

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19

Musschoot, J., D. Deduytsche, H. Poelman, et al. "Comparison of Thermal and Plasma-Enhanced ALD/CVD of Vanadium Pentoxide." Journal of The Electrochemical Society 156, no. 7 (2009): P122. http://dx.doi.org/10.1149/1.3133169.

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20

Gschwandtner, Alexander. "Production Worthy ALD in Batch Reactors." Materials Science Forum 573-574 (March 2008): 181–94. http://dx.doi.org/10.4028/www.scientific.net/msf.573-574.181.

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Scaling of CMOS structures through the deep sub-micron range and into the nano-scale range (< 100 nm) has posed a number of difficult problems for processing technology. One main technological approach has been to improve the uniformity and conformality of deposited layers. As the Atomic Layer Deposition (ALD) has already demonstrated that it can overcome many of the limitations of current film deposition techniques, it seems to be the solution for very conformal layers of high quality on severe topography. The ALD method has been developed already in the 1970’s by Tumo Suntola and co-worke

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21

Joo, Jae-Hong, Sang-Jun Kang, Chanthasombath Sisabay, Hong-Bin Chen, and Kwang-Ho Kim. "Characterization of a-Si and SiOx Films Using CVD/ALD Combination System." Journal of Korean Institute of Information Technology 14, no. 11 (2016): 1. http://dx.doi.org/10.14801/jkiit.2016.14.11.1.

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22

Emslie, David J. H., Preeti Chadha, and Jeffrey S. Price. "Metal ALD and pulsed CVD: Fundamental reactions and links with solution chemistry." Coordination Chemistry Reviews 257, no. 23-24 (2013): 3282–96. http://dx.doi.org/10.1016/j.ccr.2013.07.010.

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23

Masse de la Huerta, César, Viet Nguyen, Jean-Marc Dedulle, Daniel Bellet, Carmen Jiménez, and David Muñoz-Rojas. "Influence of the Geometric Parameters on the Deposition Mode in Spatial Atomic Layer Deposition: A Novel Approach to Area-Selective Deposition." Coatings 9, no. 1 (2018): 5. http://dx.doi.org/10.3390/coatings9010005.

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Within the materials deposition techniques, Spatial Atomic Layer Deposition (SALD) is gaining momentum since it is a high throughput and low-cost alternative to conventional atomic layer deposition (ALD). SALD relies on a physical separation (rather than temporal separation, as is the case in conventional ALD) of gas-diluted reactants over the surface of the substrate by a region containing an inert gas. Thus, fluid dynamics play a role in SALD since precursor intermixing must be avoided in order to have surface-limited reactions leading to ALD growth, as opposed to chemical vapor deposition g

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24

Mathur, Poonam, Roman Kaplan, Amanda Theppote, Shyam Kottilil, and Eleanor Wilson. "1067. Interferon-free Hepatitis C Treatment Increases Surrogates of Cardiovascular Disease Risk in Black Veterans." Open Forum Infectious Diseases 7, Supplement_1 (2020): S562—S563. http://dx.doi.org/10.1093/ofid/ofaa439.1253.

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Abstract Background Sustained virologic response (SVR) after hepatitis C virus (HCV) treatment with either Interferon (IFN)-based or IFN-free regimens with direct-acting antivirals (DAAs) has been shown to reduce cardiovascular disease (CVD) events in majority white populations stratified by ASCVD score. However, the effect of IFN-free therapy on lipid profiles after SVR, as an indirect measure of CVD risk, is unknown in Black patients. Methods We evaluated HCV-infected Veterans from the Baltimore VA who were treated with DAAs between 2015-2019. We performed a retrospective analysis comparing

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25

Shima, K., H. Shimizu, T. Momose, and Y. Shimogaki. "Study on the Adhesion Strength of CVD-Cu Films with CVD/ALD-Co(W) Underlayers Made Using Carbonyl Precursors." ECS Solid State Letters 3, no. 2 (2013): P20—P22. http://dx.doi.org/10.1149/2.005402ssl.

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26

Wang, Quan, Sannian Song, Zhitang Song, Dawei Wang, and Yuqiang Ding. "Synthesis and thermal properties of aminopyrimidine Ge(II) precursors for CVD/ALD technology." Russian Journal of General Chemistry 84, no. 10 (2014): 2027–30. http://dx.doi.org/10.1134/s1070363214100284.

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27

Ismagilov, Rinat R., Feruza T. Tuyakova, Victor I. Kleshch, Ekaterina A. Obraztsova, and Alexander N. Obraztsov. "CVD nanographite films covered by ALD metal oxides: structural and field emission properties." physica status solidi (c) 12, no. 7 (2015): 1022–27. http://dx.doi.org/10.1002/pssc.201510022.

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28

Matienzo, DJ Donn, Daniel Settipani, Emanuele Instuli, and Tanja Kallio. "Active IrO2 and NiO Thin Films Prepared by Atomic Layer Deposition for Oxygen Evolution Reaction." Catalysts 10, no. 1 (2020): 92. http://dx.doi.org/10.3390/catal10010092.

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Atomic layer deposition (ALD) is a special type of chemical vapor deposition (CVD) technique that can grow uniformed thin films on a substrate through alternate self-limiting surface reactions. Recently, the application of these thin film materials to catalytic systems has begun to attract much attention, and the capacity to deposit these catalytic films in a highly controlled manner continues to gain importance. In this study, IrO2 and NiO thin films (approximately 25 to 60 nm) were deposited on industrial Ni expanded mesh as an anode for alkaline water electrolysis. Different ALD operating p

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29

Barin, Gabriela B., Antonio G. Souza Filho, Ledjane S. Barreto, and Jing Kong. "Pre-Patterned CVD Graphene: Insights on ALD deposition parameters and their influence on Al2O3 and graphene layers." MRS Advances 1, no. 20 (2016): 1401–9. http://dx.doi.org/10.1557/adv.2016.202.

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ABSTRACTFabrication of graphene nanostructures it is important for both investigating their intrinsic physical properties and applying them into various functional devices. In this work we present a study on atomic layer deposition (ALD) of Al2O3 to produce patterned graphene through area-selective chemical vapor deposition (CVD) growth. A systematic parametric study was conducted to determine how the number of cycles and the purging time affect the morphology and the electrical properties of both graphene and Al2O3 layers.

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30

Vidjayacoumar, B., V. Ramalingam, D. J. H. Emslie, J. Blackwell, and S. Clendenning. "Solution Reactivity Studies for Identification of Promising New ALD and Pulsed CVD Reaction Chemistries." ECS Transactions 50, no. 13 (2013): 53–66. http://dx.doi.org/10.1149/05013.0053ecst.

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31

Kumar, Sudheer, G. Sarau, C. Tessarek, M. Göbelt, S. Christiansen, and R. Singh. "Study of high quality spinel zinc gallate nanowires grown using CVD and ALD techniques." Nanotechnology 26, no. 33 (2015): 335603. http://dx.doi.org/10.1088/0957-4484/26/33/335603.

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32

Hong, Kyung Pyo, Kyu Hyun Lee, Jungtae Nam, et al. "Visualization of CVD-grown graphene on Cu film using area-selective ALD for quality management." Applied Surface Science 496 (December 2019): 143614. http://dx.doi.org/10.1016/j.apsusc.2019.143614.

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33

Boogaard, Arjen, Alexey Kovalgin, Tom Aarnink, et al. "Langmuir-probe Characterization of an Inductively-Coupled Remote Plasma System intended for CVD and ALD." ECS Transactions 2, no. 7 (2019): 181–91. http://dx.doi.org/10.1149/1.2408913.

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34

Vidjayacoumar, Balamurugan, David J. H. Emslie, Scott B. Clendenning, James M. Blackwell, James F. Britten, and Arnold Rheingold. "Investigation of AlMe3, BEt3, and ZnEt2as Co-Reagents for Low-Temperature Copper Metal ALD/Pulsed-CVD." Chemistry of Materials 22, no. 17 (2010): 4844–53. http://dx.doi.org/10.1021/cm101442e.

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35

Van Veldhoven, Zenas A., Jack A. Alexander-Webber, Abhay A. Sagade, Philipp Braeuninger-Weimer, and Stephan Hofmann. "Electronic properties of CVD graphene: The role of grain boundaries, atmospheric doping, and encapsulation by ALD." physica status solidi (b) 253, no. 12 (2016): 2321–25. http://dx.doi.org/10.1002/pssb.201600255.

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36

Barreca, Davide, Giorgio Carraro, Michael E. A. Warwick, et al. "Fe2O3–TiO2nanosystems by a hybrid PE-CVD/ALD approach: controllable synthesis, growth mechanism, and photocatalytic properties." CrystEngComm 17, no. 32 (2015): 6219–26. http://dx.doi.org/10.1039/c5ce00883b.

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37

Potts, Stephen E., Claire J. Carmalt, Christopher S. Blackman, et al. "Bis(cyclopentadienyl) zirconium(IV) amides as possible precursors for low pressure CVD and plasma-enhanced ALD." Inorganica Chimica Acta 363, no. 6 (2010): 1077–83. http://dx.doi.org/10.1016/j.ica.2009.07.004.

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38

Guan, Li Xia, Zhao Yi Zhou, and Yi Jing Huang. "Research Progress in the Preparation of Flexible Substrate Barrier Films." Materials Science Forum 1027 (April 2021): 91–98. http://dx.doi.org/10.4028/www.scientific.net/msf.1027.91.

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The development of flexible electronics towards for the direction of bend ability, lightweight, portability, long life against falling. The performance of the substrate in the flexible electronics plays a very important role in the development of electronics. In this article, three preparation technologies of thin films are introduced, including CVD, PVD and ALD. The paper also introduces the research progress on the preparation of substrate barrier films, and one main challenge that may face by the preparation of thin film materials. In order to satisfy the development of flexible electronics

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39

Mandia, David J., Wenjun Zhou, Matthew J. Ward, et al. "The effect of ALD-grown Al2O3on the refractive index sensitivity of CVD gold-coated optical fiber sensors." Nanotechnology 26, no. 43 (2015): 434002. http://dx.doi.org/10.1088/0957-4484/26/43/434002.

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40

Demirtaş, Mustafa, Cem Odacı, Yahaya Shehu, Nihan Kosku Perkgöz, and Feridun Ay. "Layer and size distribution control of CVD-grown 2D MoS2 using ALD-deposited MoO3 structures as the precursor." Materials Science in Semiconductor Processing 108 (March 2020): 104880. http://dx.doi.org/10.1016/j.mssp.2019.104880.

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41

Shima, Kohei, Hideharu Shimizu, Takeshi Momose, and Yukihiro Shimogaki. "Study on the Adhesion Strength of CVD-Cu Films with ALD-Co(W) Underlayers Made Using Amidinato Precursors." ECS Journal of Solid State Science and Technology 4, no. 2 (2014): P20—P29. http://dx.doi.org/10.1149/2.0061502jss.

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42

Lubitz, Katharina, Varun Sharma, Shashank Shukla, et al. "Asymmetrically Substituted Tetrahedral Cobalt NHC Complexes and Their Use as ALD as well as Low-Temperature CVD Precursors." Organometallics 37, no. 7 (2018): 1181–91. http://dx.doi.org/10.1021/acs.organomet.8b00060.

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43

Bülow, Tim, Hassan Gargouri, Mirko Siebert, Rolf Rudolph, Hans-Hermann Johannes, and Wolfgang Kowalsky. "Moisture barrier properties of thin organic-inorganic multilayers prepared by plasma-enhanced ALD and CVD in one reactor." Nanoscale Research Letters 9, no. 1 (2014): 223. http://dx.doi.org/10.1186/1556-276x-9-223.

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44

Peeters, Daniel, Alexander Sadlo, Katarina Lowjaga, et al. "Nanostructured Fe2 O3 Processing via Water-Assisted ALD and Low-Temperature CVD from a Versatile Iron Ketoiminate Precursor." Advanced Materials Interfaces 4, no. 18 (2017): 1700155. http://dx.doi.org/10.1002/admi.201700155.

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45

Phillips, Richard, and Eric Eisenbraun. "Substrate Dosing with TiCl4 as a Surface Pretreatment for CVD and ALD of Al for Future IC Interconnects." ECS Transactions 35, no. 22 (2019): 27–35. http://dx.doi.org/10.1149/1.3649927.

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46

Shima, K., H. Shimizu, T. Momose, and Y. Shimogaki. "Erratum: Study on the Adhesion Strength of CVD-Cu Films with CVD/ALD-Co(W) Underlayers Made Using Carbonyl Precursors [ECS Solid State Lett., 3, P20 (2014)]." ECS Solid State Letters 3, no. 10 (2014): X5. http://dx.doi.org/10.1149/2.0081410ssl.

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47

Wang, Quan, Sannian Song, Zhitang Song, Dawei Wang, and Yuqiang Ding. "The synthesis, characterization and DFT calculations of highly volatile aminogermylene precursors and thin film investigation for CVD/ALD technology." Inorganic Chemistry Communications 53 (March 2015): 26–30. http://dx.doi.org/10.1016/j.inoche.2015.01.008.

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48

Shimizu, Hideharu, Yudai Suzuki, Takeshi Nogami, et al. "CVD and ALD Co(W) Films Using Amidinato Precursors as a Single-Layered Barrier/Liner for Next-Generation Cu-Interconnects." ECS Journal of Solid State Science and Technology 2, no. 7 (2013): P311—P315. http://dx.doi.org/10.1149/2.008307jss.

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49

Starostin, Sergey A., Wytze Keuning, Jean-Paul Schalken, et al. "Synergy Between Plasma-Assisted ALD and Roll-to-Roll Atmospheric Pressure PE-CVD Processing of Moisture Barrier Films on Polymers." Plasma Processes and Polymers 13, no. 3 (2015): 311–15. http://dx.doi.org/10.1002/ppap.201500096.

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50

Lehninger, David, Konstantin Mertens, Lukas Gerlich, Maximilian Lederer, Tarek Ali, and Konrad Seidel. "Room temperature PVD TiN to improve the ferroelectric properties of HZO films in the BEoL." MRS Advances 6, no. 21 (2021): 535–39. http://dx.doi.org/10.1557/s43580-021-00118-w.

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Abstract Zirconium-doped hafnium oxide (HZO) crystallizes at low temperatures and is thus ideal to implement ferroelectric (FE) functionalities into the back end of line (BEoL). Therefore, metal-ferroelectric-metal (MFM) capacitors are of great interest. Placed in the BEoL, they can be connected either to the drain- or the gate-contact of a standard logic device to realize different emerging FE-embedded non-volatile memory (eNVM) concepts. However, the low crystallization temperature increases also the risk for a premature crystallization of the HZO films during the growth of the top electrode

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