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Dissertations / Theses on the topic 'Cvd'

Author: Grafiati
Published: 4 June 2021
Last updated: 25 July 2025

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1

Dupel‎, Pascal. "CVD/CVI pulsée du pyrocarbone : application aux matériaux composites thermostructuraux." Bordeaux 1, 1993. http://www.theses.fr/1993BOR10552.

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2

Stenberg, Pontus. "Fluorinated SiC CVD." Doctoral thesis, Linköpings universitet, Halvledarmaterial, 2017. http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-133832.

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For the emerging semiconductor material silicon carbide (SiC) used in high power devices, chemical vapor deposition (CVD) is the most prominent method to create the electrically active SiC epitaxial layers in the device. The process of growing such epitaxial layers is to use a hydrocarbon and silane diluted in hydrogen flow through a hot chamber where chemical reactions take place in such manner that Si and C finally deposit on the surface creating epitaxial SiC. The addition of chlorine (Cl) to the process has been thoroughly investigated due to its ability to reduce homogeneous nucleation in
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3

Ćmiel, Milan. "VÝVOJ NÁSTROJŮ S PKD, CVD VRSTVOU A CVD POVLAKEM PRO DOKONČOVÁNÍ DĚR." Master's thesis, Vysoké učení technické v Brně. Fakulta strojního inženýrství, 2009. http://www.nusl.cz/ntk/nusl-228661.

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The aim of the thesis is to design, conduct and assess an experiment seeking to look into the utility properties of recent tools manufactured by HAM-FINAL. The tools include polycrystalline diamond (PCD) and CVD diamond cutting edges. In the theoretical part, the attention is devoted to cutting materials with an emphasis on diamond materials, as well as to issues associated with the wearing of the cutting tools, requirements specified for precision of bores and tools used in the manufacture of precision bores. The paper further provides an overview of a selection of world’s leading manufacture
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4

Herron, Christopher Robert. "CVD synthesis of graphene." Thesis, Durham University, 2011. http://etheses.dur.ac.uk/908/.

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The research into the subject of graphene has soared over the past few years. Due to the exceptional nature of some of its properties, it has become ever popular in the field of nanotechnology. The use of graphene for various electronics applications have been displayed using graphene that can be exfoliated or grown via several techniques. However, the scalability of these methods do not allow for bulk synthesis, known in the case of other graphitic nanomaterials like fullerenes and carbon nanotubes. For realistic applications, graphene has to be made in large quantities at a reasonable cost f
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5

Procházka, Pavel. "Příprava grafenu metodou CVD." Master's thesis, Vysoké učení technické v Brně. Fakulta strojního inženýrství, 2012. http://www.nusl.cz/ntk/nusl-230205.

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This diploma thesis is mainly focused on the fabrication of graphene layers on the copper foil by the Chemical Vapor Deposition (CVD). For this purpose the high-temperature chamber for the production of the graphene was completed and fully automated. The production of the high area graphene on the copper foil was experimentally achieved. The Raman microscopy and X-ray photoelectron spectroscopy measurements proved that the produced graphene is mostly a monolayer. Graphene layer was transferred on non-conductive substrate.
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6

Lahouidak, Jamal 1er. "Etude de couches minces de TiO2 déposées par CVD et CVD assistée plasma." Montpellier 2, 1991. http://www.theses.fr/1991MON20162.

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L'etude de depot d'oxyde de titane en couches minces par les deux techniques cvd et pacvd en vue de realisation des membranes inorganiques, necessite la maitrise de la texture des couches sur le support de membrane pour l'adapter aux conditions de fonctionnement. En cvd thermique, la texture des couches de tio#2 depend de la pression de travail et de la temperature du substrat. Cette texture est colonnaire a basse pression et granuleuse a des pressions plus elevees pour une temperature de 600c. En pacvd, les couches sont equivalentes au point de vue texture, elles sont amorphes et compactes. L
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7

Mouchon, Arnaud. "Mécanismes de pyrolyse des hydrocarbures et dépôt de pyrocarbone par CVD/CVI." Bordeaux 1, 2004. http://www.theses.fr/2004BOR12916.

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"Une étude des mécanismes de pyrolyse des hydrocarbures, conduisant au dépôt de pyrocarbone par CVD/CVI, a été menée suivant une double approche expérimentale/numérique. A partir du précurseur propane, la phase gazeuse a été analysée in-situ (spectroscopie IRTF) en cours d'infiltration et en ligne (CPG) en CVD ou CVI : le rôle des espèces en C2 dans la formation du pyrocarbone dit " faiblement anisotrope" et celui des espèces en C3 dans celle du pyrocarbone dit "laminaire colonnaire" ont été identifiés. Les caractérisations micro -et nano-texturales (MOLP, MET et spectroscopie Raman) des dépôt
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8

Majdi, Saman. "Electronic Characterization of CVD Diamond." Licentiate thesis, Uppsala University, Electricity, 2010. http://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-116433.

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<p>Diamond is a promising material for high-power, high-frequency and hightemperatureelectronics applications, where its outstanding physical propertiescan be fully exploited. It exhibits an extremely high energy gap, veryhigh carrier mobilities, high breakdown field strength, and the highest thermalconductivity of any wide bandgap material. It could therefore producethe fastest switching, the highest power density, and the most efficient electronicdevices obtainable, with applications in the RF power, automotive andaerospace industries. Lightweight diamond devices, capable of high temperature
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9

Bansa, Patrice B. "Property characterization of CVD nickel." Thesis, National Library of Canada = Bibliothèque nationale du Canada, 2001. http://www.collectionscanada.ca/obj/s4/f2/dsk3/ftp05/MQ63137.pdf.

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10

Pedersen, Henrik. "Chloride-based Silicon Carbide CVD." Doctoral thesis, Linköpings universitet, Materiefysik, 2008. http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-15428.

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Silicon carbide (SiC) is a promising material for high power and high frequency devices due to its wide bandgap, high break down field and high thermal conductivity. The most established technique for growth ofepitaxial layers of SiC is chemical vapor deposition (CVD) at around 1550 °C using silane, SiH4, and lighthydrocarbons e g propane, C3H8, or ethylene, C2H4, as precursors heavily diluted in hydrogen. For high-voltagedevices made of SiC thick (&gt; 100 μm), low doped epilayers are needed. Normal growth rate in SiC epitaxy is~ 5 μm/h, rendering long growth times for such SiC device structu
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11

Troupe, Claire Elizabeth. "Glucose sensors utilising CVD diamond." Thesis, Heriot-Watt University, 1998. http://hdl.handle.net/10399/559.

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12

Gray, Fraser. "Novel applications of CVD diamond." Thesis, Heriot-Watt University, 2006. http://hdl.handle.net/10399/1510.

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13

Talbot-Ponsonby, Daniel. "Paramagnetic defects in CVD diamonds." Thesis, University of Oxford, 1997. http://ora.ox.ac.uk/objects/uuid:d934e6d5-a7d5-409f-9849-8f019a9707b3.

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Paramagnetic defects in free standing polycrystalline diamond films made by chemical vapour deposition (CVD) have been studied using electron paramagnetic resonance (EPR), electron-nuclear double resonance (ENDOR) and infrared absorption. EPR experiments at a range of frequencies (1-35 GHz) confirm the <sup>1</sup>H hyperfine parameters for the recently identified H1 defect (Zhou et al., Phys. Rev. B, 54:7881 (1996)). In the samples studied here, H1 is always accompanied by another defect at g=2.0028(1). Saturation recovery measurements are consistent with two defects centred on g=2.0028. The
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14

Pastor-Moreno, Gustavo. "Electrochemical applications of CVD diamond." Thesis, University of Bristol, 2002. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.251054.

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15

Stoikou, Maria D. "Etching of CVD diamond surfaces." Thesis, Heriot-Watt University, 2010. http://hdl.handle.net/10399/2441.

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This thesis presents a fundamental study on etching of diamond surfaces. Details of the growth by microwave plasma Chemical Vapour Deposition (CVD) and etching by microwave hydrogen plasma, oxygen reactive ion etching (RIE) and thermal oxidation are presented. Prolonged exposure of {100} diamond surfaces to microwave hydrogen plasma was investigated by atomic force microscopy (AFM). Reduction of surface roughness has been observed while formation of etch pits has not been detected. X-ray photoelectron spectroscopy (XPS) detected the removal of graphitic carbon and reduction of oxygen under hyd
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16

Cossou, Benjamin. "Elaboration par CVI/CVD et caractérisation de dépôts dans le système Si-N(-O)." Thesis, Bordeaux, 2018. http://www.theses.fr/2018BORD0144.

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La thèse porte sur cette couche de nitrure ou d’oxynitrure de silicium. Le déroulé prévoit l’élaboration des deux types de dépôts par voie gazeuse (par Chemical Vapor Infiltration CVI), la caractérisation de ces dépôts (par tous les moyens scientifiques à disposition et jugés utiles), ainsi que des essais en conditions proches de l’application visée (haute température, présence de phases liquides) pour juger de l’efficacité de ces dépôts et notamment effectuer une comparaison entre le nitrure et l’oxynitrure. Une étude complète des paramètres modifiables lors de l’élaboration et de leur effet
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17

Norman, John A. T., Melanie Perez, Stefan E. Schulz, and Thomas Waechtler. "New Precursors for CVD Copper Metallization." Universitätsbibliothek Chemnitz, 2008. http://nbn-resolving.de/urn:nbn:de:bsz:ch1-200801346.

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A novel CVD copper process is described using two new copper CVD precursors, KI3 and KI5, for the fabrication of IC or TSV (Through Silicon Via) copper interconnects. The highly conformal CVD copper can provide seed layers for subsequent copper electroplating or can be used to directly fabricate the interconnect in one step. These new precursors are thermally stable yet chemically reactive under CVD conditions, growing copper films of exceptionally high purity at high growth rates. Their thermal stability can allow for elevated evaporation temperatures to generate the high precurso
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18

Hetherington, Alan Veron. "Electron microscopy of CVD diamond films." Thesis, University of Cambridge, 1995. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.388429.

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19

Huntley, Miriam Hanna. "Transport studies on CVD-grown graphene." Thesis, Massachusetts Institute of Technology, 2009. http://hdl.handle.net/1721.1/51608.

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Thesis (S.B.)--Massachusetts Institute of Technology, Dept. of Physics, 2009.<br>Includes bibliographical references (leaves 67-68).<br>In this thesis, we report transport studies performed on CVD-grown graphene. We perform resistivity and hall measurements on a large-area sample at 4' K. We measure the carrier mobility of the sample and find it to be on the order of 1000 cm2/Vs, whereas monolayer graphene regularly exhibits much higher mobilities. We also examine what we find to be weak signatures of Shubnikov-de Haas oscillations in magnetic field sweeps. Finally, we study magneto-resistance
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20

MacLean, Heather J. (Heather Jean) 1974. "Silver transport in CVD silicon carbide." Thesis, Massachusetts Institute of Technology, 2004. http://hdl.handle.net/1721.1/17745.

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Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Nuclear Engineering, 2004.<br>Includes bibliographical references.<br>Ion implantation and diffusion couple experiments were used to study silver transport through and release from CVD silicon carbide. Results of these experiments show that silver does not migrate via classical diffusion in silicon carbide. Silver release is, however, likely dominated by vapor transport through cracks in SiC coatings. The results of silver ion implantation in silicon carbide and subsequent annealing at 1500ʻC place an upper limit on the silver d
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21

Pócza, David [Verfasser], Michael [Akademischer Betreuer] Fiederle, Harald [Akademischer Betreuer] Hillebrecht, and Gerhard P. [Akademischer Betreuer] Willeke. "Fluiddynamische Grundlagenmodellierung von Silizium-CVD-Anlagen." Freiburg : Universität, 2016. http://d-nb.info/1122647697/34.

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22

Galbiati, Arnaldo. "Development of CVD diamond radiation detectors." Thesis, University of Surrey, 2003. http://epubs.surrey.ac.uk/774245/.

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Chemical vapour deposition (CVD) diamond is a very interesting material for the fabrication of radiation detectors, particularly for X-ray dosimetry. CVD diamond could potentially be used for large-area X-ray sensors, it is extremely radiation hard, can withstand high temperatures and highly corrosive environments, and is also "tissue-equivalent" in regard to X-ray absorption. In fact, there exist several applications where other standard semiconductor detectors do not fulfil those specific requirements. In this work we report on the fabrication and characterisation of CVD diamond radiation de
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23

Castro, Manuela Oliveira de. "SÃntese de grafeno pelo mÃtodo CVD." Universidade Federal do CearÃ, 2011. http://www.teses.ufc.br/tde_busca/arquivo.php?codArquivo=7146.

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Conselho Nacional de Desenvolvimento CientÃfico e TecnolÃgico<br>O avanÃo e o aperfeiÃoamento das tÃcnicas de sÃntese e manipulaÃÃo de materiais sÃo fundamentais para o entendimento de suas propriedades e das possÃveis formas de produÃÃo e utilizaÃÃo. PorÃm, no caso dos nanomateriais, principalmente, cujas extraordinÃrias capacidades sÃo bastante celebradas, problemas como defeitos estruturais, alto custo de obtenÃÃo e dificuldade de produÃÃo em larga escala ainda necessitam ser solucionados. Inserido neste panorama està o grafeno, um nanomaterial cuja morfologia bidimensional, constituÃda por
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24

Alvarez, José A. "Caractérisation de films en diamant CVD." Paris 6, 2004. http://www.theses.fr/2004PA066428.

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25

König, Jens. "Herstellung und Einsatz CVD-diamantbeschichteter Bohrgewindefräser." Stuttgart Fraunhofer-Verl, 2009. http://d-nb.info/99618242X/04.

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26

Castro, Manuela Oliveira de. "Síntese de grafeno pelo método CVD." reponame:Repositório Institucional da UFC, 2011. http://www.repositorio.ufc.br/handle/riufc/9775.

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CASTRO, Manuela Oliveira de. Síntese de grafeno pelo método CVD. 2011. 84 f. Dissertação (Mestrado em Física) - Programa de Pós-Graduação em Física, Departamento de Física, Centro de Ciências, Universidade Federal do Ceará, Fortaleza, 2011.<br>Submitted by Edvander Pires (edvanderpires@gmail.com) on 2014-11-13T20:03:00Z No. of bitstreams: 1 2011_dis_mocastro.pdf: 3411512 bytes, checksum: 64f6579c926c263cd9391dfb058954bb (MD5)<br>Approved for entry into archive by Edvander Pires(edvanderpires@gmail.com) on 2014-11-13T20:35:29Z (GMT) No. of bitstreams: 1 2011_dis_mocastro.pdf: 3411512 bytes, che
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27

Hoferek, Lukáš. "Příprava vrstevnatých struktur technologií PE CVD." Master's thesis, Vysoké učení technické v Brně. Fakulta chemická, 2008. http://www.nusl.cz/ntk/nusl-216230.

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The work is aimed at preparation and characterization of thin films deposited by Plasma-Enhanced Chemical Vapor Deposition (PE-CVD) on silicon wafers. A comprehensive characterization of the deposition system in order to determine the range of deposition conditions was a part of the study. Subsequently, the single and multi-layers were deposited from tetravinylsilane monomer. The deposition process was monitored by spectroscopic ellipsometry and mass spectroscopy. Layers and layered structures were characterized by microscopic and spectroscopic techniques. The physical and chemical properties
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28

Santucci, Virginie. "Elaboration et caractérisation de couches minces polymères par CVD et photo-CVD pour des applications optiques originales." Thesis, Toulouse, INPT, 2009. http://www.theses.fr/2009INPT034G/document.

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La société ESSILOR est à l’origine d’un nouveau concept ophtalmique : « l’optique digitale ». Ce concept s’appuie sur la discrétisation du verre en pixels et l’introduction, dans ces structures micrométriques, de liquides fonctionnels. Les axes de recherche de cette thèse sont issus des besoins et contraintes de cette thématique et ils concernent principalement : l’élaboration de couches minces polymères par un procédé CVD (Chemical Vapor Deposition) et les dépôts de films sur des substrats liquides. Un bâti commercial de CVD avec un mode d’activation thermique a permis la réalisation contrôlé
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29

Shahzad, Hussein. "Carbon Nanotubes Deposited by Hot Wire Plasma CVD and water assisted CVD for Energetic and Environmental Applications." Doctoral thesis, Universitat de Barcelona, 2014. http://hdl.handle.net/10803/284231.

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Nanoscience and Nanotechnology have experienced a tremendous growth in few years. Nanotechnologies are the design, characterization, production and application of structures, devices and systems by controlling shape and size at nanometer scale. Carbon exists in several forms, depending on how the carbon atoms are arranged, their properties vary. One of the carbon forms is carbon nanotubes, which are capped at each end by half of a fullerene, and have aroused great interest in the research community because of their exotic electrical, thermal and mechanical properties. MWCNTs and SWCNTs were di
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30

Miranda, Cláudia Renata Borges. "Filmes de diamante nanocristalino infiltrados em substratos de silício poroso através das técnicas CVD/CVI." Instituto Nacional de Pesquisas Espaciais, 2009. http://urlib.net/sid.inpe.br/mtc-m18@80/2009/04.06.12.17.

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O crescimento de filmes de diamante nanocristalino (NCD - Nanocrystalline Diamond) obtido através da infiltração nos poros do silício poroso (PS - Porous Silicon) foi estudado utilizando microscopia eletrônica de alta resolução, difração de raios-x de alta resolução, espectroscopia de fotoelétrons de raios-x e espectroscopia de espalhamento Raman. Os filmes de NCD/PS resultaram em um material compósito, com grande potencial de aplicação eletroquímica, principalmente devida à sua grande área supercial ativa. Utilizando o processo de anodização com ácido fluorídrico e acetonitrila foram produzid
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31

Féron, Olivier. "CVD/CVI du pyrocarbone : analyse in situ de la phase gazeuse ; études cinétique et structurale." Bordeaux 1, 1998. http://www.theses.fr/1998BOR10540.

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Dans le cadre de la determination des mecanismes du depot chimique en phase vapeur des pyrocarbones laminaires, une etude experimentale a ete conduite. Celle-ci comprend (i) l'analyse de la composition de la phase gazeuse (par spectrometrie infrarouge a transformee de fourier in-situ et par spectrometrie de masse), (ii) l'etude cinetique in-situ de la formation du pyrocarbone (microbalance) et (iii) l'analyse de la structure du carbone depose (microscopie optique en lumiere polarisee et microscopie electronique en transmission). Les parametres experimentaux etudies sont la temperature et le te
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32

Lavenac, Jérôme. "CVD/CVI de pyrocarbones laminaires à partir du propane : Processus chimiques homogènes et hétérogènes, nanostructure." Bordeaux 1, 2000. http://www.theses.fr/2000BOR12274.

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Dans le cadre de la recherche des mécanismes de dépôt chimique en phase gazeuse de pyrocarbones laminaires, une étude approfondie du passage d'une texture laminaire lisse (LL) à une texture laminaire rugueuse (LR) sous l'effet de la température T et du temps de séjour ts, à été réalisée à travers quatre approches expérimentales. (1) Une analyse par spectrométrie infrarouge et par couplage chromatographie en phase gazeuse / spectrométrie de masse a permis de corréler l'évolution de la composition de la phase gazeuse (e. G. Formation d'hydrocarbures aromatiques polycycliques HAP à T et ts croiss
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33

Sipp, Étienne. "CVD/CVI de céramiques à base de zircone pure ou stabilisée : approche thermodynamique et expérimentale." Bordeaux 1, 1990. http://www.theses.fr/1990BOR10563.

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34

Burgio, Federica <1975&gt. "Studio del processo CVI/CVD per lo sviluppo di compositi ceramici rinforzati a fibra lunga." Doctoral thesis, Alma Mater Studiorum - Università di Bologna, 2011. http://amsdottorato.unibo.it/3882/1/Burgio_Federica_tesi.pdf.

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The most relevant thermo-mechanical properties of SiC or C based CFCCs are high strength, high toughness, low weight, high reliability, thermal shock and fatigue resistance. Thanks to these special characteristics, the CFCCs are the best candidates to substitute metals and monolithic ceramics, traditionally employed to realize components in energy, aeronautic and nuclear fields. Among the commonly techniques for the CFCCs production, CVI still represents the most significant one. Its main advantages are the versatility, the high quality deposits and the fact that it is conducted under mild te
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Burgio, Federica <1975&gt. "Studio del processo CVI/CVD per lo sviluppo di compositi ceramici rinforzati a fibra lunga." Doctoral thesis, Alma Mater Studiorum - Università di Bologna, 2011. http://amsdottorato.unibo.it/3882/.

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The most relevant thermo-mechanical properties of SiC or C based CFCCs are high strength, high toughness, low weight, high reliability, thermal shock and fatigue resistance. Thanks to these special characteristics, the CFCCs are the best candidates to substitute metals and monolithic ceramics, traditionally employed to realize components in energy, aeronautic and nuclear fields. Among the commonly techniques for the CFCCs production, CVI still represents the most significant one. Its main advantages are the versatility, the high quality deposits and the fact that it is conducted under mild te
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36

Gebeyehu, Zewdu Messele. "High-quality CVD graphene for spintronic applications." Doctoral thesis, Universitat Autònoma de Barcelona, 2019. http://hdl.handle.net/10803/669549.

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Aquesta tesi s’ha basat en la síntesi i el processament del grafè per tal d’obtenir les condicions òptimes per a la seva utilització en aplicacions d’espintrònica. La tesi està emmarcada en dos camps de recerca punters: el món del grafè amb la seva riquesa de propietats úniques i el camp de l’espintrònica que explora el grau de llibertat de l’espí de l’electró de cara a noves aplicacions en informàtica i tecnologia de comunicacions (com és ara els dispositius de lògica i d’emmagatzematge d’informació). En aquest context, el grafè és un material prometedor de cara a transportar l’espí amb grans
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37

Gabrysch, Markus. "Charge Transport in Single-crystalline CVD Diamond." Doctoral thesis, Uppsala universitet, Elektricitetslära, 2010. http://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-122794.

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Diamond is a semiconductor with many superior material properties such as high breakdown field, high saturation velocity, high carrier mobilities and the highest thermal conductivity of all materials. These extreme properties, as compared to other (wide bandgap) semiconductors, make it desirable to develop single-crystalline epitaxial diamond films for electronic device and detector applications. Future diamond devices, such as power diodes, photoconductive switches and high-frequency field effect transistors, could in principle deliver outstanding performance due to diamond's excellent intrin
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38

Grams, Jörg. "Untersuchungen zum Fräsen mit CVD-diamantbeschichteten Werkzeugen." Aachen : Shaker, 2004. http://deposit.d-nb.de/cgi-bin/dokserv?idn=970527306.

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39

Andersson, Joakim. "Microengineered CVD Diamond Surfaces : Tribology and Applications." Doctoral thesis, Uppsala : Acta Universitatis Upsaliensis : Univ.-bibl. [distributör], 2004. http://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-4261.

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40

Davies, A. "Solid particle erosion of freestanding CVD diamond." Thesis, University of Cambridge, 2002. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.598373.

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The erosion rate of CVD diamond was ascertained using various sized erodents, impacting at different velocities. The relative sizes of the contact area and the size of the grains affected the erosion rate. Since the contact area increased with erodent size and impact velocity, both the sand size exponent and the velocity exponent were dependent upon the size of the grains. This result confirms that the ratio of the contact area to the microstructure is important. CVD diamonds often exhibit small fractures near to grain boundaries. These fractures usually contain graphitic or amorphous carbon t
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Bain, Michael. "The deposition and characterisation of CVD tungsten." Thesis, Queen's University Belfast, 2000. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.326383.

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42

Wheeler, David William. "Solid particle erosion of CVD diamond coatings." Thesis, University of Southampton, 2001. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.342748.

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43

Afzal, A. "Effects of nitrogen on CVD diamond growth." Thesis, Manchester Metropolitan University, 1999. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.286081.

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44

Hassan, Israr-Ul. "Biased enhanced nucleation of CVD diamond films." Thesis, Manchester Metropolitan University, 2002. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.369078.

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Crick, C. R. "The chemistry and CVD of hydrophobic surfaces." Thesis, University College London (University of London), 2011. http://discovery.ucl.ac.uk/1332890/.

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This thesis details the use of chemical vapour deposition (CVD) to deposit hydrophobic surfaces, in addition to this, the functional properties are investigated and further characterisation of the surfaces extreme water repulsion (superhydrophobicity) is made. The design and manufacture of surfaces that repel water (hydrophobic) draws much inspiration from the natural world, including examples of superhydrophobic leaves. The way water can interact with a surface is characterised, with many examples of superhydrophobic surface generation provided from the literature, along with general routes t
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Warwick, M. E. A. "New CVD methods for energy efficient glazing." Thesis, University College London (University of London), 2014. http://discovery.ucl.ac.uk/1426972/.

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This work studies the use of the novel electric field assisted chemical vapour deposition (EACVD) process in the production of thermochromic thin films of vanadium dioxide on glass substrates. The investigation studies the effects an applied electric field has on both aerosol assisted chemical vapour deposition (AACVD) and atmospheric pressure chemical vapour deposition (APCVD) reactions of vanadyl acetylacetonate. The electric field was generated by applying a potential difference between two transparent conducting oxide coated glass substrates. The electric field was varied between 0 – 3000
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47

Curat, Stephane Pierre. "Growth and doping of CVD diamond films." Thesis, University College London (University of London), 2006. http://discovery.ucl.ac.uk/1444591/.

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The extreme properties of diamond combined with the emergence of chemical vapour deposition (CVD) techniques for the growth of large area free standing diamond wafers has led to considerable interest in the use of this material for electronic applications. However, to date, the polycrystalline nature of the material grown by heteroepitaxy has hindered progress in this field leading to only niche applications for diamond electronics being identified. Whilst homoepitaxial growth seemed to be a solution to counter this issue, the substrate cost and the lack of a suitable dopant for -type conducti
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48

Tuo, Mingguang, Dongchao Xu, Si Li, et al. "Nonlinear Microwave Characterization of CVD Grown Graphene." IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC, 2016. http://hdl.handle.net/10150/620930.

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Linear and nonlinear microwave properties of chemical vapor deposition (CVD)-grown graphene are characterized by incorporating a coplanar waveguide (CPW) transmission-line test structure. The intrinsic linear transport properties (S-parameters) of the graphene sample are measured and extracted via a deembedding procedure and then fitted with an equivalent circuit model up to 10 GHz. A statistical uncertainty analysis based on multiple measurements is implemented to esti- mate the error of the extracted graphene linear parameters as well. Nonlinear properties (second- and third-order harmonic
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49

Fořt, Tomáš. "Charakterizace nanostruktur deponovaných PVD a CVD technologiemi." Doctoral thesis, Vysoké učení technické v Brně. Fakulta elektrotechniky a komunikačních technologií, 2009. http://www.nusl.cz/ntk/nusl-233449.

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The thesis deals with mechanical properties of thin hard wear-resistant coatings. The work presents a method of dynamic testing of thin hard coatings on a newly constructed prototype of impact wear tester. It provides a comparison with standard methods of layer testing and presents new experimental results of dynamic impact wear test of the coatings. Finally, the thesis covers preparation techniques of thin film systems deposited on various substrates and their characterization using optical and electron microscopy.
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50

Naamoune, Malika. "Modélisation et optimisation numérique de réacteurs CVD." Aix-Marseille 2, 1997. http://www.theses.fr/1997AIX22122.

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La deposition chimique en phase vapeur concerne la croissance de films fins a partir de precurseurs solides en phase gazeuse. Un grand nombre de reactions chimiques se produisent dans le volume gazeux ainsi qu'a la surface de croissance : le substrat. La prediction des taux de croissance et de l'uniformite des films que l'on obtient sont des parametres industriellement importants. Nous avons mene une etude numerique sur des reacteurs cvd en 2d et 3d pour la croissance de films fins de silicium (si) a partir du silene (sih#4) et utilisant l'hydrogene comme gaz porteur. En particulier, nous avon
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