Relevant bibliographies by topics / Czochralski

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  2. Dissertations / Theses
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  4. Book chapters
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Academic literature on the topic 'Czochralski'

Author: Grafiati
Published: 4 June 2021
Last updated: 25 May 2024

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Journal articles on the topic "Czochralski"

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Tomaszewski, Paweł E. "Uwagi do komentarza Prof. Michała Kokowskiego o badaniach życiorysu Jana Czochralskiego." Studia Historiae Scientiarum 15 (November 24, 2016): 395–404. http://dx.doi.org/10.4467/23921749shs.16.018.6161.

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This is a subsequent (third) part of the polemic on the facts from the life of Jan Czochralski and the difference in the presentation of these facts by amateur and professional historians. The main source of controversy is Jan Czochralski’s voluminous biography entitled Powrót. Rzecz o Janie Czochralskim(2012), English edition: Jan Czochralski restored (2013).
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Kokowski, Michał. "Odpowiedź na list Dr. Pawła E. Tomaszewskiego na temat badań życiorysu Jana Czochralskiego." Studia Historiae Scientiarum 15 (November 24, 2016): 405–8. http://dx.doi.org/10.4467/23921749shs.16.019.6162.

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The author replies to the letter of Dr. Paweł E. Tomaszewski, which is a subsequent (third) stage of the controversy regarding the facts of life of Jan Czochralski and the differences in the way they are presented by an amateur researcher and a professional historian. The source of the controversy is the biography Powrót. Rzecz o Janie Czochralskim (2012), the English edition: Jan Czochralski restored (2013). In the opinion of the author, a professional historian of science may have some reservations regarding the sometimes too popular a style of the publications of Dr. Tomaszewski. Nevertheless, there is no doubt that so far this amateur [i.e. enthusiast] of historical research has done much more regarding the biography and achievements of Jan Czochralski than professional historians and historians of science. This reply concludes the exchange of polemics.
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Yankovych, Oleksandra, and Vladyslav Verbets. "The Figure of Jan Czochralski as an Example of a Scientist, Teacher and Patriot for the Youth of Today to Imitate (1885 – 1953)." Professional Education: Methodology, Theory and Technologies, no. 18 (December 20, 2023): 274–89. http://dx.doi.org/10.31470/2415-3729-2023-18-274-289.

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The article analyses the life path and activities of the world-recognized Polish scientist, inventor, metallurgist, patron and philanthropist, writer, professor of the Warsaw Polytechnic Jan Czochralski (1885 - 1953). He is considered one of the four most famous and most cited Polish scientists who influenced the development of civilization. In terms of the greatness and significance of his scientific achievements, he is placed in the same row as the world-famous Poles M. Copernicus, M. Skłodowska-Curie, I. Łukasiewicz, who not only glorified Poland, but also changed the world. The purpose of the article is to study and analyze the main milestones of J. Czochralski's creative activity and the role of his scientific achievements. Research methods. Theoretical methods were used as synthesis analysis, systematization, comparison, classification, generalization. The results. The life path, the main stages of Jan Czochralski's activity against the background of historical events of the end of the 19th and the first half of the 20th centuries are revealed. The trials that the scientist underwent, unjust accusations of helping the Third Reich, and the reasons for his persecution are shown (he was fully rehabilitated only in 2011). Patriotism, hard work, perseverance, humanism, which contributed to successful teaching activities are emphasized as the personal qualities of Jan Czochralski. The most important achievements of the outstanding Polish scientist are analysed: the method of growing silicon single crystals, which are used in modern electronic and digital technology, in solar energy, and in jewellery; the discovery of alloys for railway bearings (known as B-metal); the invention of the radio microscope as the predecessor of the modern atomic force microscope, the enrichment of research tools. Jan Czochralski is a scientist, inventor, metallurgist, and philanthropist. He started processes that we now interpret as technology transfer. He is an author of poetry collections and manuals, a university professor who created a new image of a teacher, an entrepreneur and a person who believed in family values. He was a comprehensively developed personality who combined intellectual achievements and aesthetics, spiritual and moral qualities and hard work. Conclusions. The expediency of wider popularization of the figure of J. Czochralski in modern educational institutions as a comprehensively developed personality, as a model for younger generations to follow is shown.
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Tomaszewski, Paweł E. "Jan Czochralski—father of the Czochralski method." Journal of Crystal Growth 236, no. 1-3 (March 2002): 1–4. http://dx.doi.org/10.1016/s0022-0248(01)02195-9.

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Blizzard, John R. "Professor Jan Czochralski and the Czochralski award." physica status solidi (b) 248, no. 7 (May 10, 2011): 1559–62. http://dx.doi.org/10.1002/pssb.201140119.

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Tomaszewski, Paweł E. "Od wazeliny do krzemowej rewolucji: czyli niezwykła historia największego polskiego odkrycia, które zmieniło świat." Studia Historiae Scientiarum 16 (December 18, 2017): 155–200. http://dx.doi.org/10.4467/2543702xshs.17.008.7709.

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In August 2016 exactly one hundred years passed from the discovery of the Czochralski method of single crystal pulling, named after Jan Czochralski (1885–1953), the Polish chemist and metallurgist. To celebrate this anniversary, a translation of Czochralski main publication into Polish was published. In the present paper we show the pharmaceutical inspiration which was most likely a source of the discovery of the Czochralski method. We present the evolution of this method up to obtaining huge single crystals of silicon, the fundamental element of contemporary electronics and our civilization.
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Sun, Chenguang, Zhongshi Lou, Xingtian Ai, Zixuan Xue, Hui Zhang, and Guifeng Chen. "Effects of Nitrogen Doping on Pulling Rate Range of Defect-Free Crystal in CZ Silicon." Coatings 13, no. 9 (September 18, 2023): 1637. http://dx.doi.org/10.3390/coatings13091637.

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We investigated the effect of nitrogen doping on the pulling rate range of defect-free crystal in silicon with a diameter of 200 mm. It was found that the pulling rate range of defect-free crystal in nitrogen-doped Czochralski silicon is wider and the pulling rate (defect free) is lower than it is in non-nitrogen-doped Czochralski silicon. Under the experiment, the pull rate was from 0.67 mm/min~0.58 mm/min to 0.65 mm/min~0.54 mm/min. To further confirm the above experimental analysis, a numerical simulation process of nitrogen-doped Czochralski and non-nitrogen-doped Czochralski in an industrial system was performed. The V/G value along the S/L interface was the same for both models, but the distribution of Cvi (concentration of vacancy–concentration of self-interstitial) for nitrogen-doped Czochralski crystal silicon was more uniform and flat in a nitrogen-doped single crystal. Furthermore, the nitrogen-doped Czochralski crystal silicon had a smaller void size and a higher oxygen precipitation density. The experimental results are in good agreement with the numerical simulation results.
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Gurdziel, Wojciech, Zygmunt Wokulski, Grzegorz Dercz, and Jacek Krawczyk. "Crystallization and Microstructure of Co0.75Ni0.25Si2 Solid Solution." Solid State Phenomena 186 (March 2012): 86–89. http://dx.doi.org/10.4028/www.scientific.net/ssp.186.86.

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The microstructure of Co0.75Ni0.25Si2solid solution, obtained by two different techniques was studied. The solidification processes were conducted using Bridgman and Czochralski methods. The processes were conducted under atmospheric pressure and in the helium atmosphere. Various pulling down (Bridgman method) and pulling up (Czochralski method) rates were applied for ingots and boules preparation. The obtained Co0.75Ni0.25Si2ingots and boules were subjected to the metallographic observations and chemical microanalysis, mainly used Scanning Electron Microscopy techniques. They were studied using X-ray phase analysis too. Comparing the investigation results it was found that the ingots obtained by the Bridgman method and boules obtained by the Czochralski method were single crystalline. The boules, obtained using the Czochralski method, possess better structural quality than ingots obtained by the Bridgman method.
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Britten, J. F., H. A. Dabkowska, A. B. Dabkowski, J. E. Greedan, J. L. Campbell, and W. J. Teesdale. "Czochralski-Grown SrLaGaO4." Acta Crystallographica Section C Crystal Structure Communications 51, no. 10 (October 15, 1995): 1975–77. http://dx.doi.org/10.1107/s0108270194011820.

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Derby, J. J., and R. A. Brown. "Thermal-capillary analysis of Czochralski and liquid encapsulated Czochralski crystal growth." Journal of Crystal Growth 75, no. 2 (May 1986): 227–40. http://dx.doi.org/10.1016/0022-0248(86)90032-1.

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Dissertations / Theses on the topic "Czochralski"

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Válek, Lukáš. "Microdefects in Czochralski Silicon." Doctoral thesis, Vysoké učení technické v Brně. Fakulta strojního inženýrství, 2012. http://www.nusl.cz/ntk/nusl-234030.

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Disertační práce se zabývá studiem defektů v monokrystalech Czochralskiho křemíku legovaných bórem. Práce studuje vznik kruhových obrazců vrstevných chyb pozorovaných na povrchu křemíkových desek po oxidaci. Hlavním cílem práce je objasnit mechanismy vzniku pozorovaného rozložení vrstevných chyb na studovaných deskách a vyvinout metody pro řízení tohoto jevu. Na základě experimentálních analýz a rozborů obecných mechanismů vzniku defektů jsou objasňovány vazby mezi vznikem defektů různého typu. Tyto jsou pak diskutovány v souvislosti s parametry krystalu i procesu jeho růstu. Takto sestavený model je využit pro vývoj procesu růstu krystalů, kterým je potlačen nadměrný vznik defektů ve studovaných deskách. Za účelem studia defektů jsou zaváděny a vyvíjeny nové analytické metody. Disertační práce byla vytvořena za podpory ON Semiconductor Czech Republic, Rožnov pod Radhoštěm.
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Derby, Jeffrey J. "Analysis of heat transfer, stability, and dynamics of Czochralski and liquid encapsulated Czochralski growth of semiconductor materials." Thesis, Massachusetts Institute of Technology, 1986. http://hdl.handle.net/1721.1/15048.

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Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Chemical Engineering, 1986.
MICROFICHE COPY AVAILABLE IN ARCHIVES AND SCIENCE.
Bibliography: leaves 360-367.
by Jeffrey J. Derby.
Ph.D.
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Hicks, T. W. "Hydrodynamics of liquid encapsulation Czochralski crystal growth." Thesis, University of Bristol, 1988. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.233905.

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Pascoa, Soraia Sofia. "Oxygen and related defects in Czochralski silicon crowns." Thesis, Norges teknisk-naturvitenskapelige universitet, Institutt for kjemi, 2014. http://urn.kb.se/resolve?urn=urn:nbn:no:ntnu:diva-27116.

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For the purpose of this thesis work, four n-type CZ silicon ingots with different crown tapered angle and shouldering area were characterized in order to understand the oxygen behavior and related defects on ingot top cuts and its influence on material lifetime. A p-type CZ silicon ingot was also characterized in order to have a reference material for comparison. Differences in lifetime between the crowns were observed and a strong correlation between the crown tapered angle and oxygen concentration and distribution was established. The crown with the higher tapered angle has the highest lifetime. In contrast, the crown with the lower crown tapered angle has the lowest lifetime. The crystal body quality can be influenced by the top ingot quality in what concerns the interstitial oxygen concentration and distribution. Thus, analyzing the early body of each ingot, it might be possible to predict the crystal body quality.
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Kozakevich, Daniel Norberto. "Simulação numerica do fluxo de czochralski não isotermico." [s.n.], 1988. http://repositorio.unicamp.br/jspui/handle/REPOSIP/307528.

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Orientador : Jose Vitorio Zago
Dissertação (mestrado) - Universidade Estadual de Campinas, Instituto de Matematica, Estatistica e Computção Científica
Made available in DSpace on 2018-07-16T04:08:25Z (GMT). No. of bitstreams: 1 Kozakevich_DanielNorberto_M.pdf: 1469044 bytes, checksum: 696736f842cfb0a6aec0d6210c9639fe (MD5) Previous issue date: 1988
Resumo: Na produção de cristais pela solidificação de sais fundidos, a técnica de CZOCHRALSKI é amplamente utilizada. Os cristais obtidos por esta técnica são indicados para a construção de dispositivos de baixa potência. Nesta técnica o sal é fundido num cadinho e mantido a uma temperatura superior a seu ponto de fusão. Uma semente do cristal é mergulhada no liquido e então puxada lentamente. O calor latente do sal que se solidifica na interfase semente-liquido, é eliminado por conducções através do cristal. Os três mecânismos básicos: convecção natural, rotação do cadinho e rotação do cristal e suas combinações foram simuladas numéricamente, para um fluxo de CZOCHRALSKI. Uma solução aproximada foi obtida mediante o metodo dos elementos finitos mistos, utilizando elementos quadrilaterais subparamétricos com aproximações / quadráticas nas componentes da velocidade e a temperatura e lineares na pressão. As integrais são calculadas numéricamente com uma regra gaussiana de nove pontos. As equações discretizadassao resolvidas pelo método de Newton e,os sistemas lineares pelo método frontal. O fluxo é não isotérmico, incompressivel, newtoniano, estacionário, tridimensional axisimétrico com fronteiras fixas. Outras formulações alternativas são colocadas para as equações de Navier-Stokes
Abstract: Not informed
Mestrado
Mestre em Matemática Aplicada
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Brakel, Thomas W. "Mathematical modelling of the Czochralski crystal growth process." Doctoral thesis, University of Cape Town, 2006. http://hdl.handle.net/11427/4868.

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Includes bibliographical references (leaves 142-149).
In this document a mathematical model for the Czochralski crystal growth process is developed. The trend in current research involves developing cumbersome numerical simulations that provide little or no understanding of the underlying physics. We attempt to review previous research methods, mainly devoted to silicon, and develop a novel analytical tool for indium antimonide (lnSb) crystal growth. This process can be subdivided into two categories: solidification and fluid mechanics. Thus far, crystal solidification of the Czochralski process has been described in the literature mainly qualitatively. There has been little work in calculating actual solidification dynamics. Czochralski crystal growth is a very sensitive process, particularly for lnSb, so it is crucial to describe the system as accurately as possible. A novel ID quasi-steady method is proposed for the shape and temperature field of an lnSb crystal, incorporating the effects of the melt. The fluid mechanics of the Czochralski melt have been modelled by numerous researchers,with calculations performed using commercial software. However, a descriptionof the buoyancy and rotation interaction in the melt has not been adequatelyperformed. Many authors have presented flow patterns but none have indicated either: melt conditions preferential for crystal growth or at least a description of a typical melt structure. In this work, a scale analysis is performed that implies an idealized flow structure. An asymptotic model is then derived based on this order of magnitude analysis, resulting in a fast and efficient fluid flow calculation. The asymptotic model is validated against a numerical solution to ensure that the macroscopic features of the flow structure are present. The asymptotic model does not show exact agreement, but does provide an estimate of the melt heat flux that is necessary for the solidification calculation. The asymptotic model is also used to predict macroscopic changes in the melt due to rotation.
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Perret, Christian. "Simulation numérique des échanges thermiques et des contraintes thermoélastiques dans un tirage Czochralski." Grenoble 1, 1989. https://theses.hal.science/tel-00335809.

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Hui, David C. W. "Characterization of semi-insulating liquid encapsulated Czochralski gallium arsenide." Thesis, University of British Columbia, 1989. http://hdl.handle.net/2429/30648.

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This thesis consists of a study of several qualification techniques for SI LEC GaAs and the application of these techniques to various ingots. For use on the starting material before any doping procedures, the technique of studying the semi-insulating properties by monitoring the activation energy of dark resistivity with temperature was investigated. Experiments were performed on both ring dot as well as cloverleaf samples. Different activation energies for the dark resistivity were observed for temperatures above and below 290 K. Also, ingots with different background impurity concentrations were tested. Another technique applicable to the undoped starting material is Optical Transient Current Spectroscopy (OTCS). The occurrence of 'negative' peaks was simulated using a depletion layer model. The results showed that under certain conditions a recombination centre can produce a positive peak, a negative peak, or both a positive and a negative peak. Further analysis of the negative peaks led to the formulation of a field enhanced injection model to explain their occurrence. More than one negative peak was observed experimentally. In addition, the effect of different electrode structures on OTCS experiments was investigated. The effect of polarity on negative peaks was studied using ring dot structures and was found to agree with the proposed model. Some peculiar anomalies which were observed in investigating OTCS led to the discovery of a photocurrent memory effect with decay time constants of the order of minutes at a temperature of 266 K. This memory effect was found to be associated with surface modifications. The effects of surface passivation with Na₂S were investigated. The method of normalizing the OTCS peak height with photocurrent was investigated. A microscopic spatial analysis tool, scanning OTCS, with a spot size of about 2 µm was developed in order to probe the spatial variation of deep levels and compare with that of dislocations or other defects. An experiment on an abraded surface was performed using the scanning OTCS and showed that the negative peak does indeed correlate with mechanical damage. Wafer performance during implantation doping is an important qualification test. Comparisons between standard furnace annealing and rapid thermal annealing were performed. A comparison of the estimated percentage activation using C(V) measurements with that from Hall measurements, with and without a correction for the surface depleted region, was performed. The C(V) analysis technique, used in the industry to obtain doping profiles of implanted wafers, was studied. The effect of using serial and parallel measurement modes was investigated. Simulations of C(V) measurements on implanted devices by solving the Poisson-Boltzmann equation for the charge distribution under different biases were performed. The limitation of the C(V) profiling technique in detecting sharp dopant profiles was investigated. A system for quick analysis of the percentage of activation using a mercury probe was designed. The effect of serial and parallel analysis of the impedance measured by the mercury probe on the estimated dopant profile was investigated. The effect of different electrode structures (Schottky to Schottky as compared to Schottky to Ohmic) on estimated doping profiles was studied. The mobility profile as a tool for qualification was investigated. The effect of surface states on mobility was studied. A crucial factor in wafer qualification is the uniformity of transistor characteristics across the wafer. In order to test this on a wafer, thousands of transistors have to be measured. A technique of perforating measurements automatically with consistency is needed. An automatic probing station for measuring large arrays of transistors was engineered. Tests on arrays of transistors were performed to investigate the effect of different fabrication processes, in particular the amount of surface etch, on the uniformity of threshold voltage.
Applied Science, Faculty of
Electrical and Computer Engineering, Department of
Graduate
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Martinez, André Luiz. "Síntese e crescimento de cristal da fase BiNbO4." Universidade de São Paulo, 2006. http://www.teses.usp.br/teses/disponiveis/76/76132/tde-14012008-170719/.

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Muitos trabalhos científicos têm sido publicados relatando os diferentes métodos de preparação e as propriedades de corpos cerâmicos e filmes finos de niobato de bismuto (BiNbO4 - BN). Provido de características como alta permissividade dielétrica e excelentes propriedades ferroelétricas, esse composto tem despertado o interesse da comunidade científica. No entanto, uma literatura restrita e conflitante é encontrada sobre esse composto na forma de monocristais. A ocorrência de transições de fase estrutural mostrou-se a maior dificuldade na preparação desses compostos como monocristais. A potencial aplicação como material de dispositivos eletrônicos, devido suas propriedades ferroelétricas, assim como o desafio da preparação de materiais que apresentam transição estrutural de fase, serviram de motivação para a realização desse estudo. O objetivo desse trabalho foi a realização do estudo da síntese e do crescimento de cristais de BiNbO4. Para isso foram utilizadas as técnicas de Czochralski (CZ), Laser Heated Pedestal Growth (LHPG) e fluxo. As dificuldades encontradas quando utilizada cada uma das técnicas, assim como suas variações, foram discutidas. A transição estrutural de fase (\'alfa\'-BiNbO4 - \'beta\'-BiNbO4) mostrou-se uma barreira na preparação desse tipo de material com qualidade óptica. O comportamento da permissividade dielétrica (\'épsilon\') e fator de perda (tg\'teta\') em função da temperatura e freqüência foram determinados através de estudos de espectroscopia de impedância.
Many scientific works have been published reporting different procedures to the preparation and properties of ceramic bodies and thin films of bismuth niobate (BiNbO4 - BN). Characterized by high dielectric permittivity and excellent ferroelectric properties, this compound has attracted the interest of the scientific community. However, a restricted and conflict literature is found about this compound in the single crystal form. The appearance of structure phase transitions was demonstrated in the most difficulty for the preparation of this compounds as single crystals. The potential applications as electronic device material, due its ferroelectrics properties, as well as the challenge to preparation materials which indicate structural transition were used as motivations to the development of this work. The main purposes of this work were to make synthesis and the crystal growth of BiNbO4. For this propose, techniques as Czochralski (CZ), Laser Heated Pedestal Growth (LHPG) and self-flux were used. The difficulties found when used each one of the techniques and their variations are discussed. The structural phase transition (\'alfa\'-BiNbO4 - \'beta\'-BiNbO4) was the principal barrier in the preparation of this material with optical quality. The behavior of dielectric permittivity (\'épsilon\' ) and lost factor (tg\' teta\') by the temperature and frequency were determined through studies of Impedance Spectroscopy
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Kinney, Thomas Arthur. "Quantitative modelling for optimization of the Czochralski growth of silicon." Thesis, Massachusetts Institute of Technology, 1992. http://hdl.handle.net/1721.1/13204.

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Books on the topic "Czochralski"

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Tomaszewski, Paweł. Jan Czochralski i jego metoda =: Jan Czochralski and his method. Wrocław: Instytut Niskich Temperatur i Badań Strukturalnych PAN, 2003.

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Organ, A. E. Numerical solution of Czochralski crystal growth. Norwich: University of East Anglia, 1986.

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Pooni, J. S. Characterisation of deep levels in undopedsemi-insulatingliquidencapsulated czochralski galliumarsenide. Manchester: UMIST, 1994.

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Thierry, Duffar, ed. Crystal growth processes based on capillarity: Czochralski, floating zone, shaping and crucible techniques. Hoboken, N.J: Wiley, 2010.

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Duffar, Thierry. Crystal growth processes based on capillarity: Czochralski, floating zone, shaping and crucible techniques. Hoboken, N.J: Wiley, 2010.

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W, Shields A., Frazier Donald O, and George C. Marshall Space Flight Center., eds. A preliminary review of organic materials single crystal growth by the Czochralski technique. [Marshall Space Flight Center, Ala.]: National Aeronautics and Space Administration, George C. Marshall Space Flight Center, 1988.

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Tomaszewski, Paweł. Powrót: Rzecz o Janie Czochralskim. Wrocław: Oficyna Wydawnicza ATUT, 2012.

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Pietila, Douglas A. Evaluation of gold gettering by intrinsic oxide precipitation in Czochralski silicon. 1986.

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Duffar, Thierry. Crystal Growth Processes Based on Capillarity: Czochralski, Floating Zone, Shaping and Crucible Techniques. Wiley & Sons, Incorporated, John, 2010.

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Duffar, Thierry. Crystal Growth Processes Based on Capillarity: Czochralski, Floating Zone, Shaping and Crucible Techniques. Wiley & Sons, Limited, John, 2010.

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Book chapters on the topic "Czochralski"

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Galazka, Zbigniew. "Czochralski Method." In Gallium Oxide, 15–36. Cham: Springer International Publishing, 2020. http://dx.doi.org/10.1007/978-3-030-37153-1_2.

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Tatarchenko, Y. A. "The Czochralski Technique." In Fluid Mechanics and Its Applications, 45–69. Dordrecht: Springer Netherlands, 1993. http://dx.doi.org/10.1007/978-94-017-2988-8_3.

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Zulehner, W. "Czochralski Growth of Silicon." In Semiconductor Silicon, 2–23. Berlin, Heidelberg: Springer Berlin Heidelberg, 1989. http://dx.doi.org/10.1007/978-3-642-74723-6_1.

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Zeng, Zhong, Yongxiang Zhang, and Jingqiu Chen. "Model for Czochralski Crystal Growth." In Computational Mechanics, 236. Berlin, Heidelberg: Springer Berlin Heidelberg, 2007. http://dx.doi.org/10.1007/978-3-540-75999-7_36.

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Voigt, Axel, and Karl-Heinz Hoffmann. "Control of Czochralski Crystal Growth." In Optimal Control of Complex Structures, 259–65. Basel: Birkhäuser Basel, 2001. http://dx.doi.org/10.1007/978-3-0348-8148-7_21.

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Lukanin, Denis, Vladimir Kalaev, and Alexander Zhmakin. "Parallel Simulation of Czochralski Crystal Growth." In Parallel Processing and Applied Mathematics, 469–74. Berlin, Heidelberg: Springer Berlin Heidelberg, 2004. http://dx.doi.org/10.1007/978-3-540-24669-5_61.

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Uelhoff, Werner. "The physics of Czochralski crystal growth." In Festkörperprobleme 27, 241–63. Berlin, Heidelberg: Springer Berlin Heidelberg, 1987. http://dx.doi.org/10.1007/bfb0107924.

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Myal’dun, A. Z., A. I. Prostomolotov, N. K. Tolochko, N. A. Verezub, and E. V. Zharikov. "Vibrational Control of Czochralski Crystal Growth." In Growth of Crystals, 181–96. Boston, MA: Springer US, 2002. http://dx.doi.org/10.1007/978-1-4615-0537-2_15.

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Winkler, Jan, Michael Neubert, Joachim Rudolph, Ning Duanmu, and Michael Gevelber. "Czochralski Process Dynamics and Control Design." In Crystal Growth Processes Based on Capillarity, 115–202. Chichester, UK: John Wiley & Sons, Ltd, 2010. http://dx.doi.org/10.1002/9781444320237.ch3.

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Diéguez, Ernesto, Jose Luis Plaza, Mohan D. Aggarwal, and Ashok K. Batra. "Czochralski Growth of Oxide Photorefractive Crystals." In Springer Handbook of Crystal Growth, 245–80. Berlin, Heidelberg: Springer Berlin Heidelberg, 2010. http://dx.doi.org/10.1007/978-3-540-74761-1_9.

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Conference papers on the topic "Czochralski"

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Nakano, Akifumi, Hide S. Koyama, and Hyung Jin Sung. "Experiments on Czochralski Convection Model." In ASME 1997 International Mechanical Engineering Congress and Exposition. American Society of Mechanical Engineers, 1997. http://dx.doi.org/10.1115/imece1997-1249.

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Abstract A laboratory experiment of critical transition flow modes in Czochralski convection model was performed. The time period of temperature oscillation tp and the interval of temperature oscillation ΔT were scrutinized to capture the critical transition regime. The effects of the rotation of a model crystal rod and a model crucible were examined for three Prandtl number flows (9.10 × 102, 4.45 × 103 and 8.89 × 103). Liquid crystal flow visualization was carried out. Experiment was extended to suppress the temperature oscillation by varying the rotation rate of model crystal rod Ω = Ω0 (1 + A sin (2πft/tp)), where A denotes the rotation amplitude and f the frequency. Based on the inherent time period of oscillation tp, the oscillatory flow modes were characterized in a range of mixed convection parameter 24.3 ≤ Ra/PrRe2 ≤ 950 at Rayleigh number Ra = 4.84 × 106.
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Uecker, Reinhard, Detlef Klimm, Steffen Ganschow, Peter Reiche, Rainer Bertram, Mathias Roßberg, and Roberto Fornari. "Czochralski growth of Ti:sapphire laser crystals." In European Symposium on Optics and Photonics for Defence and Security, edited by John C. Carrano, Arturas Zukauskas, Anthony W. Vere, James G. Grote, and François Kajzar. SPIE, 2005. http://dx.doi.org/10.1117/12.634322.

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Peters, Jason E., P. Darrell Ownby, Charles R. Poznich, Jroy C. Richter, and Dennis W. Thomas. "Infrared absorption of Czochralski germanium and silicon." In International Symposium on Optical Science and Technology, edited by Alexander J. Marker III and Mark J. Davis. SPIE, 2001. http://dx.doi.org/10.1117/12.446889.

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Rahal, Samir, and Hisao Azuma. "Flow Instabilities in a Czochralski Convective System." In ASME 7th Biennial Conference on Engineering Systems Design and Analysis. ASMEDC, 2004. http://dx.doi.org/10.1115/esda2004-58120.

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The aim of this study is to recognize the flow states and the transition mechanisms between them in a simulated Czochralski convective system. We considered the influence of the crystal rotation effects (up to Reynolds number, Re = 3.9×103) and the buoyancy (up to Rayleigh number, Ra = 7.2×107) on the flow. Using velocity fields, obtained by an ultrasonic method, the corresponding 2D Fourier spectra and a correlation function; steady, quasi-periodic and turbulent states were recognized as the Reynolds number was increased. The orthogonal decomposition method was applied to these velocity fields. The numbers of modes involved in the dynamics of turbulent states were calculated. From these results, we have concluded that the rotation effects tend to stabilize the flow, and the thermal gradients play a destabilizing role.
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Ogino, Fumimaru, T. Inarnuro, and A. Kodo. "DYNAMIC MODELLING OF CZOCHRALSKI CRYSTAL GROWTH PROCESS." In International Heat Transfer Conference 11. Connecticut: Begellhouse, 1998. http://dx.doi.org/10.1615/ihtc11.1020.

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Hara, Akito, Masaaki Koizuka, Masaki Aoki, and Tetsuo Fukuda. "Hydrogen in As-Grown Czochralski Silicon Crystals." In 1993 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 1993. http://dx.doi.org/10.7567/ssdm.1993.c-7-1.

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Liu, Lijun, and Koichi Kakimoto. "Numerical Study of the Effect of Magnetic Fields on Melt-Crystal Interface-Deflection in Czochralski Crystal Growth." In ASME 2003 Heat Transfer Summer Conference. ASMEDC, 2003. http://dx.doi.org/10.1115/ht2003-47534.

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In order to control the impurity distribution and remove defects in a crystal grown in Czochralski growth for high quality crystals of silicon, it is necessary to study and control the melt-crystal interface shape, which plays an important role in control of the crystal quality. The melt-crystal interface interacts with and is determined by the convective thermal flow of the melt in the crucible. Application of magnetic field in the Czochralski system is an effective tool to control the convective thermal flow in the crucible. Therefore, the shape of the melt-crystal interface can be modified accordingly. Numerical study is performed in this paper to understand the effect of magnetic field on the interface deflection in Czochralski system. Comparisons have been carried out by computations for four arrangements of the magnetic field: without magnetic field, a vertical magnetic field and two types of cusp-shaped magnetic field. The velocity, pressure, thermal and electromagnetic fields are solved with adaptation of the mesh to the iteratively modified interface shape. The multi-block technique is applied to discretize the melt field in the crucible and the solid field of silicon crystal. The unknown shape of the melt-crystal interface is achieved by an iterative procedure. The computation results show that the magnetic fields have obvious effects on both the pattern and strength of the convective flow and the interface shape. Applying magnetic field in the Czochralski system, therefore, is an effective tool to control the quality of bulk crystal in Czochralski growth process.
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Banerjee, Jyotirmay, and K. Muralidhar. "Simulation of Transport Phenomena and Interfacial Dynamics During Czochralski Growth of Oxide Crystals." In ASME 2008 6th International Conference on Nanochannels, Microchannels, and Minichannels. ASMEDC, 2008. http://dx.doi.org/10.1115/icnmm2008-62116.

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The quality of crystal grown in a Czochralski apparatus depends on a well organized flow and thermal field in the vicinity of the melt-crystal interface. A mathematical model that explores transport phenomena and the formation, evaluation and dynamics of the interface in a Czochralski apparatus is presented. The numerical formulation allows for the consideration of conduction in the crystal, conduction and convection in the melt and the gas phase, surface tension gradients, bulk and surface radiation and crystal rotation. Low temperature experiments using liquid crystal thermography have been conducted for validating the numerical codes. The control parameters for the Czochralski crystal growth process are crystal rotation, crucible wall and the enclosure wall temperature. Numerical simulations are carried out to establish the influence of these control parameters on the quality of oxide crystals grown in a Czochralski apparatus. Rare earth garnet YAG is considered as representative oxide material for the purpose of modeling and numerical simulation. Quantities of interest are the shape of the melt-crystal interface and the variation of pull velocity for the growth of constant diameter crystal. Steady state simulations carried out for the full Czochralski domain reveals the possibility of superheating of the crystal beyond its melting point, thus leading to the grown crystal returning to the melt. Similarly, the possibility of subcooling of the melt below the melting point of YAG at locations away from the crystal edge is indicated. The quasi-steady simulation of the growth process establishes the need for simultaneous control of crystal rotation and the crucible and enclosure wall temperature, along with the pull velocity for growth of high quality constant diameter YAG crystals.
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Camargo, F., J. A. C. Goncalves, H. J. Khoury, E. Tuominen, J. Harkonen, and C. C. Bueno. "Gamma-radiation dosimetry with magnetic Czochralski silicon diode." In 2007 IEEE Nuclear Science Symposium Conference Record. IEEE, 2007. http://dx.doi.org/10.1109/nssmic.2007.4436428.

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Yang, Deren, Jinggang Lu, Yijun Shen, Daxi Tian, Xiangyang Ma, Liben Li, and Duanlin Que. "Investigation of as-grown nitrogen-doped Czochralski silicon." In International Conference on Solid State Crystals 2000, edited by Antoni Rogalski, Krzysztof Adamiec, and Pawel Madejczyk. SPIE, 2001. http://dx.doi.org/10.1117/12.435811.

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Reports on the topic "Czochralski"

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Tsaur, S. C. Czochralski growth of gallium indium antimonide alloy crystals. Office of Scientific and Technical Information (OSTI), February 1998. http://dx.doi.org/10.2172/329561.

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Jester, T. Photovoltaic Czochralski Silicon Manufacturing Technology Improvements: Annual Subcontract Report, 1 April 1993 - 31 March 1994. Office of Scientific and Technical Information (OSTI), March 1995. http://dx.doi.org/10.2172/41327.

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Yau, Waifan. Spatially resolved localized vibrational mode spectroscopy of carbon in liquid encapsulated Czochralski grown gallium arsenide wafers. Office of Scientific and Technical Information (OSTI), April 1988. http://dx.doi.org/10.2172/5398032.

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Brown, R. A. Thermal-capillary model with axisymmetric fluid flow for analysis of Czochralski crystal growth of high Prandtl number materials: Final report. Office of Scientific and Technical Information (OSTI), September 1987. http://dx.doi.org/10.2172/6237678.

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Goodrich, Alan, and Michael Woodhouse. A Manufacturing Cost Analysis Relevant to Single- and Dual-Junction Photovoltaic Cells Fabricated with III-Vs and III-Vs Grown on Czochralski Silicon. Office of Scientific and Technical Information (OSTI), September 2013. http://dx.doi.org/10.2172/1336550.

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