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Relevant bibliographies by topics / Czochralski

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Dissertations / Theses

Academic literature on the topic 'Czochralski'

Author: Grafiati

Published: 4 June 2021

Last updated: 25 May 2024

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Dissertations / Theses on the topic "Czochralski"

1

Válek, Lukáš. "Microdefects in Czochralski Silicon." Doctoral thesis, Vysoké učení technické v Brně. Fakulta strojního inženýrství, 2012. http://www.nusl.cz/ntk/nusl-234030.

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Disertační práce se zabývá studiem defektů v monokrystalech Czochralskiho křemíku legovaných bórem. Práce studuje vznik kruhových obrazců vrstevných chyb pozorovaných na povrchu křemíkových desek po oxidaci. Hlavním cílem práce je objasnit mechanismy vzniku pozorovaného rozložení vrstevných chyb na studovaných deskách a vyvinout metody pro řízení tohoto jevu. Na základě experimentálních analýz a rozborů obecných mechanismů vzniku defektů jsou objasňovány vazby mezi vznikem defektů různého typu. Tyto jsou pak diskutovány v souvislosti s parametry krystalu i procesu jeho růstu. Takto sestavený m

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2

Derby, Jeffrey J. "Analysis of heat transfer, stability, and dynamics of Czochralski and liquid encapsulated Czochralski growth of semiconductor materials." Thesis, Massachusetts Institute of Technology, 1986. http://hdl.handle.net/1721.1/15048.

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Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Chemical Engineering, 1986.<br>MICROFICHE COPY AVAILABLE IN ARCHIVES AND SCIENCE.<br>Bibliography: leaves 360-367.<br>by Jeffrey J. Derby.<br>Ph.D.

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3

Hicks, T. W. "Hydrodynamics of liquid encapsulation Czochralski crystal growth." Thesis, University of Bristol, 1988. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.233905.

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4

Pascoa, Soraia Sofia. "Oxygen and related defects in Czochralski silicon crowns." Thesis, Norges teknisk-naturvitenskapelige universitet, Institutt for kjemi, 2014. http://urn.kb.se/resolve?urn=urn:nbn:no:ntnu:diva-27116.

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For the purpose of this thesis work, four n-type CZ silicon ingots with different crown tapered angle and shouldering area were characterized in order to understand the oxygen behavior and related defects on ingot top cuts and its influence on material lifetime. A p-type CZ silicon ingot was also characterized in order to have a reference material for comparison. Differences in lifetime between the crowns were observed and a strong correlation between the crown tapered angle and oxygen concentration and distribution was established. The crown with the higher tapered angle has the highest lifet

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5

Kozakevich, Daniel Norberto. "Simulação numerica do fluxo de czochralski não isotermico." [s.n.], 1988. http://repositorio.unicamp.br/jspui/handle/REPOSIP/307528.

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Orientador : Jose Vitorio Zago<br>Dissertação (mestrado) - Universidade Estadual de Campinas, Instituto de Matematica, Estatistica e Computção Científica<br>Made available in DSpace on 2018-07-16T04:08:25Z (GMT). No. of bitstreams: 1 Kozakevich_DanielNorberto_M.pdf: 1469044 bytes, checksum: 696736f842cfb0a6aec0d6210c9639fe (MD5) Previous issue date: 1988<br>Resumo: Na produção de cristais pela solidificação de sais fundidos, a técnica de CZOCHRALSKI é amplamente utilizada. Os cristais obtidos por esta técnica são indicados para a construção de dispositivos de baixa potência. Nesta técnica o

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6

Brakel, Thomas W. "Mathematical modelling of the Czochralski crystal growth process." Doctoral thesis, University of Cape Town, 2006. http://hdl.handle.net/11427/4868.

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Includes bibliographical references (leaves 142-149).<br>In this document a mathematical model for the Czochralski crystal growth process is developed. The trend in current research involves developing cumbersome numerical simulations that provide little or no understanding of the underlying physics. We attempt to review previous research methods, mainly devoted to silicon, and develop a novel analytical tool for indium antimonide (lnSb) crystal growth. This process can be subdivided into two categories: solidification and fluid mechanics. Thus far, crystal solidification of the Czochralski pr

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7

Perret, Christian. "Simulation numérique des échanges thermiques et des contraintes thermoélastiques dans un tirage Czochralski." Grenoble 1, 1989. https://theses.hal.science/tel-00335809.

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8

Hui, David C. W. "Characterization of semi-insulating liquid encapsulated Czochralski gallium arsenide." Thesis, University of British Columbia, 1989. http://hdl.handle.net/2429/30648.

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This thesis consists of a study of several qualification techniques for SI LEC GaAs and the application of these techniques to various ingots. For use on the starting material before any doping procedures, the technique of studying the semi-insulating properties by monitoring the activation energy of dark resistivity with temperature was investigated. Experiments were performed on both ring dot as well as cloverleaf samples. Different activation energies for the dark resistivity were observed for temperatures above and below 290 K. Also, ingots with different background impurity concentration

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9

Martinez, André Luiz. "Síntese e crescimento de cristal da fase BiNbO4." Universidade de São Paulo, 2006. http://www.teses.usp.br/teses/disponiveis/76/76132/tde-14012008-170719/.

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Muitos trabalhos científicos têm sido publicados relatando os diferentes métodos de preparação e as propriedades de corpos cerâmicos e filmes finos de niobato de bismuto (BiNbO4 - BN). Provido de características como alta permissividade dielétrica e excelentes propriedades ferroelétricas, esse composto tem despertado o interesse da comunidade científica. No entanto, uma literatura restrita e conflitante é encontrada sobre esse composto na forma de monocristais. A ocorrência de transições de fase estrutural mostrou-se a maior dificuldade na preparação desses compostos como monocristais. A poten

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10

Kinney, Thomas Arthur. "Quantitative modelling for optimization of the Czochralski growth of silicon." Thesis, Massachusetts Institute of Technology, 1992. http://hdl.handle.net/1721.1/13204.

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