Relevant bibliographies by topics / Czochralski silicon

Contents

  1. Journal articles
  2. Dissertations / Theses
  3. Books
  4. Book chapters
  5. Conference papers
  6. Reports

Academic literature on the topic 'Czochralski silicon'

Author: Grafiati
Published: 4 June 2021
Last updated: 2 February 2022

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Journal articles on the topic "Czochralski silicon"

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Yang, De Ren, and Jiahe Chen. "Germanium in Czochralski Silicon." Defect and Diffusion Forum 242-244 (September 2005): 169–84. http://dx.doi.org/10.4028/www.scientific.net/ddf.242-244.169.

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The behaviors of isovalent impurities doped in Czochralski (CZ) silicon crystal have attracted considerable attention in recent years. In this article, a review concerning recent processes in the study about germanium in CZ silicon is presented. The disturbance of silicon crystal lattice in and the influence on the mechanical strength due to germanium doping is described. Oxygen related donors, oxygen precipitation and voids defects in germanium doped Czochralski (GCZ) silicon has been demonstrated in detail. In addition, the denuded zone formation and the internal gettering technology of GCZ silicon is also discussed.
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Bates, Alison G. "Czochralski silicon radiation detectors." Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment 569, no. 1 (December 2006): 73–76. http://dx.doi.org/10.1016/j.nima.2006.09.016.

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Chen, Jia He, Xiang Yang Ma, and De Ren Yang. "Impurity Engineering of Czochralski Silicon." Solid State Phenomena 156-158 (October 2009): 261–67. http://dx.doi.org/10.4028/www.scientific.net/ssp.156-158.261.

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The novel concept of “impurity engineering in CZochralski (CZ) silicon ” for large scaled integrated circuits has been reviewed. By doping with a certain impurities into CZ silicon materials intentionally, such as nitrogen (N), germanium (Ge) and even carbon (C, with high concentration), internal gettering ability of CZ silicon wafers could be improved. Meanwhile, void defects in CZ silicon wafer could be easily eliminated during annealing at higher temperatures. Furthermore, it was also found that the mechanical strength could be increased, so that breakage of wafers decreased. Thus, it is believed that by impurity engineering CZ silicon wafers can satisfy the requirment of ultra large scale integrated circuits.
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Yu, Xuegong, Jiahe Chen, Xiangyang Ma, and Deren Yang. "Impurity engineering of Czochralski silicon." Materials Science and Engineering: R: Reports 74, no. 1-2 (January 2013): 1–33. http://dx.doi.org/10.1016/j.mser.2013.01.002.

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Aubert, J. J., and J. J. Bacmann. "Czochralski growth of silicon bicrystals." Revue de Physique Appliquée 22, no. 7 (1987): 515–18. http://dx.doi.org/10.1051/rphysap:01987002207051500.

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Mitchell, K. W. "Renaissance of Czochralski silicon photovoltaics." Progress in Photovoltaics: Research and Applications 2, no. 2 (April 1994): 115–20. http://dx.doi.org/10.1002/pip.4670020206.

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Li, Jingwei, Juncheng Li, Yinhe Lin, Jian Shi, Boyuan Ban, Guicheng Liu, Woochul Yang, and Jian Chen. "Separation and Recovery of Refined Si from Al–Si Melt by Modified Czochralski Method." Materials 13, no. 4 (February 23, 2020): 996. http://dx.doi.org/10.3390/ma13040996.

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Separation of refined silicon from Al–Si melt is still a puzzle for the solvent refining process, resulting in considerable waste of acid and silicon powder. A novel modified Czochralski method within the Al–Si alloy is proposed. After the modified Czochralski process, a large amount of refined Si particles was enriched around the seed crystalline Si and separated from the Al–Si melt. As for the Al–28%Si with the pulling rate of 0.001 mm/min, the recovery of refined Si in the pulled-up alloy (PUA) sample is 21.5%, an improvement of 22% compared with the theoretical value, which is much larger 1.99 times than that in the remained alloy (RA) sample. The content of impurities in the PUA is much less than that in the RA sample, which indicates that the modified Czochralski method is effective to improve the removal fraction of impurities. The apparent segregation coefficients of boron (B) and phosphorus (P) in the PUA and RA samples were evaluated. These results demonstrate that the modified Czochralski method for the alloy system is an effective way to enrich and separate refined silicon from the Al–Si melt, which provide a potential and clean production of solar grade silicon (SoG-Si) for the future industrial application.
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Itsumi, Manabu. "Octahedral void defects in Czochralski silicon." Journal of Crystal Growth 237-239 (April 2002): 1773–78. http://dx.doi.org/10.1016/s0022-0248(01)02337-5.

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Härkönen, J., E. Tuovinen, P. Luukka, H. K. Nordlund, and E. Tuominen. "Magnetic Czochralski silicon as detector material." Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment 579, no. 2 (September 2007): 648–52. http://dx.doi.org/10.1016/j.nima.2007.05.264.

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Messineo, Alberto. "Czochralski silicon sensors: Status of development." Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment 582, no. 3 (December 2007): 829–34. http://dx.doi.org/10.1016/j.nima.2007.07.105.

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Dissertations / Theses on the topic "Czochralski silicon"

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Válek, Lukáš. "Microdefects in Czochralski Silicon." Doctoral thesis, Vysoké učení technické v Brně. Fakulta strojního inženýrství, 2012. http://www.nusl.cz/ntk/nusl-234030.

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Disertační práce se zabývá studiem defektů v monokrystalech Czochralskiho křemíku legovaných bórem. Práce studuje vznik kruhových obrazců vrstevných chyb pozorovaných na povrchu křemíkových desek po oxidaci. Hlavním cílem práce je objasnit mechanismy vzniku pozorovaného rozložení vrstevných chyb na studovaných deskách a vyvinout metody pro řízení tohoto jevu. Na základě experimentálních analýz a rozborů obecných mechanismů vzniku defektů jsou objasňovány vazby mezi vznikem defektů různého typu. Tyto jsou pak diskutovány v souvislosti s parametry krystalu i procesu jeho růstu. Takto sestavený model je využit pro vývoj procesu růstu krystalů, kterým je potlačen nadměrný vznik defektů ve studovaných deskách. Za účelem studia defektů jsou zaváděny a vyvíjeny nové analytické metody. Disertační práce byla vytvořena za podpory ON Semiconductor Czech Republic, Rožnov pod Radhoštěm.
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Pascoa, Soraia Sofia. "Oxygen and related defects in Czochralski silicon crowns." Thesis, Norges teknisk-naturvitenskapelige universitet, Institutt for kjemi, 2014. http://urn.kb.se/resolve?urn=urn:nbn:no:ntnu:diva-27116.

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For the purpose of this thesis work, four n-type CZ silicon ingots with different crown tapered angle and shouldering area were characterized in order to understand the oxygen behavior and related defects on ingot top cuts and its influence on material lifetime. A p-type CZ silicon ingot was also characterized in order to have a reference material for comparison. Differences in lifetime between the crowns were observed and a strong correlation between the crown tapered angle and oxygen concentration and distribution was established. The crown with the higher tapered angle has the highest lifetime. In contrast, the crown with the lower crown tapered angle has the lowest lifetime. The crystal body quality can be influenced by the top ingot quality in what concerns the interstitial oxygen concentration and distribution. Thus, analyzing the early body of each ingot, it might be possible to predict the crystal body quality.
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Kinney, Thomas Arthur. "Quantitative modelling for optimization of the Czochralski growth of silicon." Thesis, Massachusetts Institute of Technology, 1992. http://hdl.handle.net/1721.1/13204.

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Kearns, Joel K. "Origin Of Growth Twins During Czochralski Growth Of Heavily Doped, Dislocation-Free Single Crystal Silicon." Digital WPI, 2019. https://digitalcommons.wpi.edu/etd-dissertations/514.

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Low voltage power electronics are made from dislocation free silicon heavily doped with arsenic or antimony to provide low electrical resistivity. Attempts to grow crystals with decreased resistivity have led to a higher probability of twinning during growth, so that the crystal no longer possesses the required crystallographic orientation for device fabrication. The source of the twins must be identified so that crystal growth process conditions can be designed to eliminate this defect mechanism, allowing lower resistivity crystals to be grown reliably. In lightly doped crystals, twinning was ascribed to presence of carbon impurity or a low probability atomic stacking accident, neither of which should be affected by increased concentration of arsenic or antimony. Crystals that twinned during growth were characterized by resistivity, Laue back-reflection x-ray diffraction, optical and scanning electron microscopy, energy dispersive x-ray spectroscopy, spreading resistance, x-ray computed tomography and electron backscatter diffraction. The twin nucleation site of silicon crystals that were grown heavily doped with arsenic or antimony were compared to lightly doped crystals which twinned, and crystals that exhibited other defects. The initial twinning in the <100> orientation heavily doped crystals occurred from small gas bubbles bursting at a {111} facet at the three phase boundary, and forming a twin orientation domain on that facet. The gas bubbles likely consist of argon, the process gas used during solidification to remove silicon monoxide gas from the growth system. The higher levels of arsenic or antimony dopant may have changed the silicon surface tension, or provided additional impurities into the liquid silicon. Either effect may have changed the number or size of argon bubbles in the liquid silicon, leading to a higher incidence of gas bubbles near the {111} facet during solidification. Similar but smaller crater features were observed on two lightly boron-doped silicon crystals that twinned. Two other lightly doped crystals formed twins from carbon inclusions, consistent with carbon as a cause. Some heavily-doped twinned samples also show high concentrations of metals at the twin nucleation site, which could affect surface energy. Measurement of the geometry of crystal surface-to-facet radius eliminated a recently-proposed twin nucleation theory from consideration. Constitutional supercooling was demonstrated to not be a major contributing factor to twin nucleation. It was shown that deliberately introducing additional arsenic dopant during solidification would nucleate twins, but twins did not occur if only elemental carbon was introduced.
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Stowe, David John. "An investigation of efficient room temperature luminescence from silicon which contains dislocations." Thesis, University of Oxford, 2006. http://ora.ox.ac.uk/objects/uuid:9ee073b7-9e3c-4637-9ce1-62e9e4ade69d.

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This thesis presents an investigation of the phenomenon of efficient, room temperature luminescence from dislocation-engineered (DE) silicon. Previous work had demonstrated that the introduction of near-surface dislocation loops to a silicon substrate by boron ion implantation and high temperature annealing produced efficient electroluminescence at room temperature. However, the mechanism by which high efficiency luminescence is produced was not understood. A wide matrix of specimens containing dislocations was fabricated by a variety of methods, including ion implantation, and their luminescence efficiencies were correlated to their physical properties. Transmission electron microscopy was used to characterise the defect structures created by ion implantation. In the majority of specimens a band of dislocation loops in close proximity to the surface was observed. The dislocation loops were shown to be consistent with a mixture of Frank and perfect dislocation loops, the relative proportions of which were dependent upon processing conditions. The thermal evolution of the dislocation loop size distribution was investigated. For the first time, a size distribution displaying a double peak was observed. The size distribution was shown to be consistent with the Gaussian distribution of two defect populations of different mean diameter. The thermal evolution of the size distribution was investigated in silicon implanted samples. A flux of self-interstitials from Frank dislocation loops to perfect dislocation loops was deduced. The evolution of the dislocation loop sizes was found to be consistent with Ostwald ripening. Cathodoluminescence (CL) was used to investigate the luminescent properties of silicon at room temperature for the first time. A new CL system was installed for this work, initially the CL system was characterised and a routine to ensure a high degree of reproducibility was formed. The luminescence mechanism of DE-silicon was shown to be the same as in unprocessed silicon wafers; TO phonon-assisted recombination. The mechanism of enhanced luminescence from DE-silicon was unambiguously shown to be due to the gettering of electrically active impurities from the specimen bulk. A reduction in the bulk transition metal impurity concentration of up to 35 times was inferred. In samples which were implanted with boron the degree of gettering was found to show a logarithmic dependence on the dislocation density. Using a crosssectional mapping technique, implanted samples were shown to contain a lower concentration of transition metal impurities throughout the entire wafer in comparison to as-received, unprocessed specimens. Furthermore, the impurity concentration was found to be lowest in close proximity to the band of dislocation loops. The dislocation loops were found to act as non-radiative recombination centres and their strength was strongly influenced by the local carrier concentration. The high doping levels of samples implanted with boron were found to minimise the non-radiative recombination action of the dislocations. Low temperature annealing was used to improve the luminescence efficiency of DE-silicon further.
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Damiani, Benjamin Mark. "Investigation of Light Induced Degradation in Promising Photovoltaic Grade Si and Development of Porous Silicon Anti-Reflection Coatings for Silicon Solar Cells." Diss., Georgia Institute of Technology, 2004. http://hdl.handle.net/1853/5203.

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Cast multi-crystalline silicon substrates are used in more than 50% of the photovoltaic modules produced today. The random grain orientations of multi-crystalline silicon wafers inhibit the formation of an effective surface texturing using conventional techniques. The other main substrate used is single crystalline Czochralski wafers (~30% of the market share). Czochralski silicon material is known to suffer from the formation of a metastable defect under carrier injection, sometimes referred to as light induced degradation (LID). Light induced degradation in low-cost photovoltaic grade silicon is studied. Trap formation is shown to occur at temperatures above 200oC. Efficiency degradation reduced from 0.75% to 0.24% when the cell thickness was reduced from 378 to 157m. The presence of light induced degradation in ribbon silicon solar cells is documented for the first time in this thesis. Trap generation and annihilation are observed in high lifetime regions of multi-crystalline silicon samples. No degradation was observed over a 24-hour period at 25oC in high efficiency ribbon solar cells (>16%), but at an elevated temperature of ~75oC, appreciable efficiency degradation was observed. Czochralski silicon solar cells showed full degradation within 24 hours at 25o C. Part two of this thesis involves the development of a surface texturing suitable for all crystalline silicon. Only 6 to 10 seconds in a 200:1 HF to HNO3 solution at room temperature allows for the formation of an effective porous silicon anti-reflection coating. This resulted in a porous silicon anti-reflection coated solar cell efficiency of 15.3% on a float zone Si sample with an excellent fill factor (78.7%). The typical process used in the literature involves porous silicon etching as the final step in the solar cell fabrication sequence. The major problem associated with this process sequence is fill factor degradation. This problem was overcome in this research by porous silicon etching prior to cell processing. It is shown that incorporating an acid texture prior to porous silicon etching can improve the surface reflectance for cast multi-crystalline and Czochralski silicon samples. Solar cell efficiencies of 14.8% for Cz Si and 13.6% for cast mc-Si were achieved.
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Abuelgasim, A. "High resistivity Czochralski-silicon using deep level dopant compensation for RF passive devices." Thesis, University of Southampton, 2012. https://eprints.soton.ac.uk/350849/.

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Combinations of analytical and experimental results indicate that deep level doping of Czochralski grown silicon wafers is capable of providing very high resistivity wafers suitable for silicon-on-insulator (SOI), integrated passive devices (IPD) and 3D integration configurations. Deep level doping involves adding trace elements to silicon that compensate for background free carriers introduced by impurities in the silicon and pin the Fermi level near the mid bandgap intrinsic level. Starting from n-type Czochralski-silicon wafers with a nominal resistivity of 50 Ωcm, gold ion implantation and subsequent annealing were used to increase the resistivity of silicon wafers by up to 3 orders of magnitude, to values as high as 93 kΩcm. Hall measurements performed over a large temperature range show that the increase in resistivity is solely due to a decrease in carrier concentration and not a decrease in mobility. The carrier concentration is only one order of magnitude larger than that of intrinsic silicon over a temperature range of 200-360 K. Hall results also show that the resistivity of the compensated material remains up to two orders of magnitude larger than that of the uncompensated material at near operating temperatures. High frequency attenuation measurements in the 1-67 GHz range for coplanar waveguides show attenuation reductions of up to 76% from 0.76 dB/mm to 0.18 dB/mm at 10 GHz for those fabricated on uncompensated and compensated silicon respectively. Spiral inductors fabricated on both compensated and uncompensated silicon show up to a factor of 10 increase in the maximum quality factor from 0.3 to 3.1 for inductors on uncompensated and compensated silicon respectively. A 70% increase in maximum quality factor from 9 to 15.2 is exhibited by inductors commercially fabricated on compensated silicon when compared to those on float-zone silicon. The coplanar waveguide and spiral inductor results provide clear evidence that deep level dopant compensation is effective in improving the performance of passive devices in the GHz frequency range.
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Furtado, Wagner Wilson. "Efeito do carbono na formação de defeitos em silício Czochralski." Universidade de São Paulo, 1991. http://www.teses.usp.br/teses/disponiveis/43/43133/tde-06082013-103439/.

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Neste trabalho é estudado o efeito do carbono na formação de defeitos em silício Czochralski crescido na direção em amostras submetidas a tratamentos térmicos variados. Medidas de espalhamento difuso de raios-X, espectroscopia de infravermelho, medidas de resistividade, topografia de raios-X e microscopia eletrônica de transmissão mostraram que os defeitos nas amostras \"como crescidas\" podem ser relacionados com os microdefeitos tipo B. Tratamento térmico a 450ºC mostrou a presença de vacâncias nas amostras com baixa concentração de carbono enquanto que nas amostras com alta concentração de carbono ocorre a inibição da formação dos doadores térmicos (\"Thermal Donors - TD\"). Os resultados confirmam os modelos de Newman e Mathiot para a geração dos TD. Para tratamento térmico a 650ºC o carbono promove a formação de Novos Doadores (\"New Donors - ND\"). Os resultados mostram que estes defeitos são de natureza predominante de vacância e concordam com os modelos de geração que envolvem átomos de oxigênio substitucional. Os doadores observados a 550ºC puderam ser relacionados aos Novos Doadores Térmicos (\"New Thermal Donors - NTD\") observados por Kamiura et al..
Effect of carbon concentration upon defect formation in oxygen rich Czochralski grown silicon has been investigated by combining various furnace thermal anneals. Diffuse X-ray scattering, infrared spectroscopy, resistivity, x-ray topography, and transmission electron microscopy have shown that defects in as-grown samples could be related to the B swirls. 450ºC anneals have shown the presence of vacancies in low carbon samples while high carbon concentration inhibited Thermal Donor (TD) formation. Our results confirm models by Newman and Mathiot for thermal donors generation. For 650ºC anneals carbon promotes New Donors (ND) formation. Our results show that these defects are mainly vacancy in nature and agrees with the substitutional oxygen models proposed for these donors. Donor formation was observed at 550ºC which could be related to New Thermal Donors (NTD) proposed by Kamiura et al..
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Pang, Shu Koon. "Investigation of recombination lifetime and defects in magnetic czochralski silicon for high efficiency solar cells." Diss., Georgia Institute of Technology, 1993. http://hdl.handle.net/1853/13554.

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Letty, Elénore. "Identification and neutralization of lifetime-limiting defects in Czochralski silicon for high efficiency photovoltaic applications." Thesis, Lyon, 2017. http://www.theses.fr/2017LYSEI094/document.

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Les cellules photovoltaïques à base de silicium cristallin représentent plus de 90% du marché photovoltaïque mondial. Des architectures de cellules à haut rendement de conversion sont actuellement développées. Pour atteindre leurs performances maximales, ces architectures nécessitent néanmoins une amélioration des propriétés électriques des substrats de silicium cristallin. Les objectifs de cette thèse sont d’identifier les défauts limitant les propriétés électriques de ces substrats, de comprendre les mécanismes menant à leur formation et de proposer des moyens permettant leur neutralisation. Les matériaux étudiés sont des plaquettes de silicium Czochralski de type n, généralement utilisé pour les applications à haut rendement. Le four de tirage Czochralski a d’abord été modélisé afin de comprendre comment le passé thermique subi par le lingot de silicium lors de la cristallisation affecte la génération des défauts. Ces travaux ont été confirmés via des confrontations avec des données expérimentales, en utilisant une méthode originale développée dans le cadre de ce travail. Nous avons ensuite étudié l’influence du budget thermique lié aux procédés de fabrication des cellules sur la population de défauts. Nous avons ainsi pu montrer que la nature des défauts limitant les propriétés électriques du silicium était grandement modifiée selon le procédé de fabrication de cellules utilisé. Nous avons en outre mis en évidence une dégradation inattendue des propriétés électriques du silicium Czochralski de type n sous illumination, liée à la formation d’un défaut volumique inconnu. Les conditions de formation et de suppression de ce défaut ont été étudiées en profondeur. Enfin, les principaux défauts limitant les propriétés électriques du silicium ayant été identifiés et les mécanismes menant à leur formation compris, nous proposons dans un dernier chapitre des nouvelles techniques de caractérisation permettant de détecter les plaquettes défectueuses en début de ligne de production de cellules photovoltaïques, et ce à une cadence industrielle
Photovoltaic solar cells based on crystalline silicon represent more than 90% of the worldwide photovoltaic market. High efficiency solar cell architectures are currently being developed. In order to allow their maximal performances to be reached, the electronic properties of their crystalline silicon substrate must however be enhanced. The goals of the present work are to identify the defects limiting the electronic properties of the substrate, to understand the mechanisms leading to their formation and to propose routes for their neutralization. The studied materials are n-type Czochralski silicon wafers, usually used as substrates for high efficiency photovoltaic applications. The Czochralski puller was first modeled in order to understand how the thermal history experienced by the silicon ingot during crystallization affects the defects generation. This study were validated through the comparison with experimental data using an original method developed in the frame of this work. We then studied the influence of the thermal budget associated to solar cell fabrication processes on the defects population. We thus showed that the nature of lifetime-limiting defects was completely changed depending on the solar cell fabrication process. Besides, we evidenced an unexpected degradation of the electronic properties of n-type Czochralski silicon under illumination, related to the formation of an unknown bulk defect. The formation and deactivation features of this defect were extensively studied. Finally, the main limiting defects being identified and the mechanisms resulting in their formation understood, we propose in a last chapter new characterization techniques for the detection of defective wafers at the beginning of production lines at an industrial throughput
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Books on the topic "Czochralski silicon"

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Pietila, Douglas A. Evaluation of gold gettering by intrinsic oxide precipitation in Czochralski silicon. 1986.

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Stockmeier, Ludwig. Heavily N-Type Doped Silicon and the Dislocation Formation During Its Growth by the Czochralski Method. Fraunhofer IRB Verlag, 2018.

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Book chapters on the topic "Czochralski silicon"

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Zulehner, W. "Czochralski Growth of Silicon." In Semiconductor Silicon, 2–23. Berlin, Heidelberg: Springer Berlin Heidelberg, 1989. http://dx.doi.org/10.1007/978-3-642-74723-6_1.

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Yu, Xuegong, and Deren Yang. "Growth of Crystalline Silicon for Solar Cells: Czochralski Si." In Handbook of Photovoltaic Silicon, 1–45. Berlin, Heidelberg: Springer Berlin Heidelberg, 2017. http://dx.doi.org/10.1007/978-3-662-52735-1_12-1.

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Yu, Xuegong, and Deren Yang. "Growth of Crystalline Silicon for Solar Cells: Czochralski Si." In Handbook of Photovoltaic Silicon, 129–74. Berlin, Heidelberg: Springer Berlin Heidelberg, 2019. http://dx.doi.org/10.1007/978-3-662-56472-1_12.

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Lan, Chung-Wen, Chao-Kuan Hsieh, and Wen-Chin Hsu. "Czochralski Silicon Crystal Growth for Photovoltaic Applications." In Advances in Materials Research, 25–39. Berlin, Heidelberg: Springer Berlin Heidelberg, 2009. http://dx.doi.org/10.1007/978-3-642-02044-5_2.

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Lightowlers, E. C., and Gordon Davies. "Oxygen-Related Luminescence Centres Created in Czochralski Silicon." In Early Stages of Oxygen Precipitation in Silicon, 303–18. Dordrecht: Springer Netherlands, 1996. http://dx.doi.org/10.1007/978-94-009-0355-5_17.

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Kulkarni, Milind S. "Continuum-Scale Quantitative Defect Dynamics in Growing Czochralski Silicon Crystals." In Springer Handbook of Crystal Growth, 1281–334. Berlin, Heidelberg: Springer Berlin Heidelberg, 2010. http://dx.doi.org/10.1007/978-3-540-74761-1_38.

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Kakimoto, Koichi. "Czochralski Silicon Single Crystals for Semiconductor and Solar Cell Applications." In Springer Handbook of Crystal Growth, 231–43. Berlin, Heidelberg: Springer Berlin Heidelberg, 2010. http://dx.doi.org/10.1007/978-3-540-74761-1_8.

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Müller, Timo, G. Kissinger, P. Krottenthaler, C. Seuring, R. Wahlich, and Wilfried von Ammon. "Precipitation Enhancement of "so Called" Defect-Free Czochralski Silicon Material." In Solid State Phenomena, 11–16. Stafa: Trans Tech Publications Ltd., 2005. http://dx.doi.org/10.4028/3-908451-13-2.11.

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Chen, Q. S., and G. Y. Deng. "Global Model for 8-inch Czochralski Silicon Crystal Growth Process." In Computational Mechanics, 306. Berlin, Heidelberg: Springer Berlin Heidelberg, 2007. http://dx.doi.org/10.1007/978-3-540-75999-7_106.

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Misiuk, A. "Uniform Stress Effect on Nucleation of Oxygen Precipitates in Czochralski Grown Silicon." In Early Stages of Oxygen Precipitation in Silicon, 485–92. Dordrecht: Springer Netherlands, 1996. http://dx.doi.org/10.1007/978-94-009-0355-5_39.

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Conference papers on the topic "Czochralski silicon"

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Hara, Akito, Masaaki Koizuka, Masaki Aoki, and Tetsuo Fukuda. "Hydrogen in As-Grown Czochralski Silicon Crystals." In 1993 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 1993. http://dx.doi.org/10.7567/ssdm.1993.c-7-1.

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Peters, Jason E., P. Darrell Ownby, Charles R. Poznich, Jroy C. Richter, and Dennis W. Thomas. "Infrared absorption of Czochralski germanium and silicon." In International Symposium on Optical Science and Technology, edited by Alexander J. Marker III and Mark J. Davis. SPIE, 2001. http://dx.doi.org/10.1117/12.446889.

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Mallik, Kanad, C. H. De Groot, P. Ashburn, and P. R. Wilshaw. "Semi-insulating Czochralski-silicon for Radio Frequency Applications." In ESSDERC 2006. Proceedings of the 36th European Solid-State Device Research Conference. IEEE, 2006. http://dx.doi.org/10.1109/essder.2006.307731.

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Lin, Lixia, Jiahe Chen, and Deren Yang. "Internal gettering of copper contamination in Czochralski silicon." In 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT). IEEE, 2010. http://dx.doi.org/10.1109/icsict.2010.5667468.

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Jiahe Chen, Deren Yang, Xiangyang Ma, and Duanlin Que. "Impurity effect on internal gettering in Czochralski silicon." In 2008 9th International Conference on Solid-State and Integrated-Circuit Technology (ICSICT). IEEE, 2008. http://dx.doi.org/10.1109/icsict.2008.4734659.

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Camargo, F., J. A. C. Goncalves, H. J. Khoury, E. Tuominen, J. Harkonen, and C. C. Bueno. "Gamma-radiation dosimetry with magnetic Czochralski silicon diode." In 2007 IEEE Nuclear Science Symposium Conference Record. IEEE, 2007. http://dx.doi.org/10.1109/nssmic.2007.4436428.

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Yang, Deren, Jinggang Lu, Yijun Shen, Daxi Tian, Xiangyang Ma, Liben Li, and Duanlin Que. "Investigation of as-grown nitrogen-doped Czochralski silicon." In International Conference on Solid State Crystals 2000, edited by Antoni Rogalski, Krzysztof Adamiec, and Pawel Madejczyk. SPIE, 2001. http://dx.doi.org/10.1117/12.435811.

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Peters, Jason E., P. Darrell Ownby, Charles R. Poznich, and Jroy C. Richter. "Far-infrared absorption of Czochralski germanium and silicon." In SPIE's International Symposium on Optical Science, Engineering, and Instrumentation, edited by Alexander J. Marker III. SPIE, 1998. http://dx.doi.org/10.1117/12.323764.

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Sortland, Øyvind S., Moez Jomâa, Mohammed M’Hamdi, Eivind J. Øvrelid, and Marisa Di Sabatino. "Statistical analysis of structure loss in Czochralski silicon growth." In 15th International Conference on Concentrator Photovoltaic Systems (CPV-15). AIP Publishing, 2019. http://dx.doi.org/10.1063/1.5123875.

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Liu, Jun. "Thermal Analysis for Designing the Hot-Zone of a Silicon Czochralski Crystal Furnace." In ASME 2012 International Mechanical Engineering Congress and Exposition. American Society of Mechanical Engineers, 2012. http://dx.doi.org/10.1115/imece2012-87078.

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Abstract:
The present work is aimed at developing an axial symmetric thermal analysis model for designing the hot-zone of a silicon crystal growth furnace. An analysis model is developed which can be used to predict the approximate pulling rate and power consumption during silicon crystal growth process when utilizing the Czochralski (CZ) method. In addition, the effectiveness of this analysis model is experimentally confirmed.
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Reports on the topic "Czochralski silicon"

1

Jester, T. Photovoltaic Czochralski Silicon Manufacturing Technology Improvements: Annual Subcontract Report, 1 April 1993 - 31 March 1994. Office of Scientific and Technical Information (OSTI), March 1995. http://dx.doi.org/10.2172/41327.

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Goodrich, Alan, and Michael Woodhouse. A Manufacturing Cost Analysis Relevant to Single- and Dual-Junction Photovoltaic Cells Fabricated with III-Vs and III-Vs Grown on Czochralski Silicon. Office of Scientific and Technical Information (OSTI), September 2013. http://dx.doi.org/10.2172/1336550.

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