Academic literature on the topic 'Czochralski silicon'
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Journal articles on the topic "Czochralski silicon"
Yang, De Ren, and Jiahe Chen. "Germanium in Czochralski Silicon." Defect and Diffusion Forum 242-244 (September 2005): 169–84. http://dx.doi.org/10.4028/www.scientific.net/ddf.242-244.169.
Full textBates, Alison G. "Czochralski silicon radiation detectors." Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment 569, no. 1 (December 2006): 73–76. http://dx.doi.org/10.1016/j.nima.2006.09.016.
Full textChen, Jia He, Xiang Yang Ma, and De Ren Yang. "Impurity Engineering of Czochralski Silicon." Solid State Phenomena 156-158 (October 2009): 261–67. http://dx.doi.org/10.4028/www.scientific.net/ssp.156-158.261.
Full textYu, Xuegong, Jiahe Chen, Xiangyang Ma, and Deren Yang. "Impurity engineering of Czochralski silicon." Materials Science and Engineering: R: Reports 74, no. 1-2 (January 2013): 1–33. http://dx.doi.org/10.1016/j.mser.2013.01.002.
Full textAubert, J. J., and J. J. Bacmann. "Czochralski growth of silicon bicrystals." Revue de Physique Appliquée 22, no. 7 (1987): 515–18. http://dx.doi.org/10.1051/rphysap:01987002207051500.
Full textMitchell, K. W. "Renaissance of Czochralski silicon photovoltaics." Progress in Photovoltaics: Research and Applications 2, no. 2 (April 1994): 115–20. http://dx.doi.org/10.1002/pip.4670020206.
Full textLi, Jingwei, Juncheng Li, Yinhe Lin, Jian Shi, Boyuan Ban, Guicheng Liu, Woochul Yang, and Jian Chen. "Separation and Recovery of Refined Si from Al–Si Melt by Modified Czochralski Method." Materials 13, no. 4 (February 23, 2020): 996. http://dx.doi.org/10.3390/ma13040996.
Full textItsumi, Manabu. "Octahedral void defects in Czochralski silicon." Journal of Crystal Growth 237-239 (April 2002): 1773–78. http://dx.doi.org/10.1016/s0022-0248(01)02337-5.
Full textHärkönen, J., E. Tuovinen, P. Luukka, H. K. Nordlund, and E. Tuominen. "Magnetic Czochralski silicon as detector material." Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment 579, no. 2 (September 2007): 648–52. http://dx.doi.org/10.1016/j.nima.2007.05.264.
Full textMessineo, Alberto. "Czochralski silicon sensors: Status of development." Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment 582, no. 3 (December 2007): 829–34. http://dx.doi.org/10.1016/j.nima.2007.07.105.
Full textDissertations / Theses on the topic "Czochralski silicon"
Válek, Lukáš. "Microdefects in Czochralski Silicon." Doctoral thesis, Vysoké učení technické v Brně. Fakulta strojního inženýrství, 2012. http://www.nusl.cz/ntk/nusl-234030.
Full textPascoa, Soraia Sofia. "Oxygen and related defects in Czochralski silicon crowns." Thesis, Norges teknisk-naturvitenskapelige universitet, Institutt for kjemi, 2014. http://urn.kb.se/resolve?urn=urn:nbn:no:ntnu:diva-27116.
Full textKinney, Thomas Arthur. "Quantitative modelling for optimization of the Czochralski growth of silicon." Thesis, Massachusetts Institute of Technology, 1992. http://hdl.handle.net/1721.1/13204.
Full textKearns, Joel K. "Origin Of Growth Twins During Czochralski Growth Of Heavily Doped, Dislocation-Free Single Crystal Silicon." Digital WPI, 2019. https://digitalcommons.wpi.edu/etd-dissertations/514.
Full textStowe, David John. "An investigation of efficient room temperature luminescence from silicon which contains dislocations." Thesis, University of Oxford, 2006. http://ora.ox.ac.uk/objects/uuid:9ee073b7-9e3c-4637-9ce1-62e9e4ade69d.
Full textDamiani, Benjamin Mark. "Investigation of Light Induced Degradation in Promising Photovoltaic Grade Si and Development of Porous Silicon Anti-Reflection Coatings for Silicon Solar Cells." Diss., Georgia Institute of Technology, 2004. http://hdl.handle.net/1853/5203.
Full textAbuelgasim, A. "High resistivity Czochralski-silicon using deep level dopant compensation for RF passive devices." Thesis, University of Southampton, 2012. https://eprints.soton.ac.uk/350849/.
Full textFurtado, Wagner Wilson. "Efeito do carbono na formação de defeitos em silício Czochralski." Universidade de São Paulo, 1991. http://www.teses.usp.br/teses/disponiveis/43/43133/tde-06082013-103439/.
Full textEffect of carbon concentration upon defect formation in oxygen rich Czochralski grown silicon has been investigated by combining various furnace thermal anneals. Diffuse X-ray scattering, infrared spectroscopy, resistivity, x-ray topography, and transmission electron microscopy have shown that defects in as-grown samples could be related to the B swirls. 450ºC anneals have shown the presence of vacancies in low carbon samples while high carbon concentration inhibited Thermal Donor (TD) formation. Our results confirm models by Newman and Mathiot for thermal donors generation. For 650ºC anneals carbon promotes New Donors (ND) formation. Our results show that these defects are mainly vacancy in nature and agrees with the substitutional oxygen models proposed for these donors. Donor formation was observed at 550ºC which could be related to New Thermal Donors (NTD) proposed by Kamiura et al..
Pang, Shu Koon. "Investigation of recombination lifetime and defects in magnetic czochralski silicon for high efficiency solar cells." Diss., Georgia Institute of Technology, 1993. http://hdl.handle.net/1853/13554.
Full textLetty, Elénore. "Identification and neutralization of lifetime-limiting defects in Czochralski silicon for high efficiency photovoltaic applications." Thesis, Lyon, 2017. http://www.theses.fr/2017LYSEI094/document.
Full textPhotovoltaic solar cells based on crystalline silicon represent more than 90% of the worldwide photovoltaic market. High efficiency solar cell architectures are currently being developed. In order to allow their maximal performances to be reached, the electronic properties of their crystalline silicon substrate must however be enhanced. The goals of the present work are to identify the defects limiting the electronic properties of the substrate, to understand the mechanisms leading to their formation and to propose routes for their neutralization. The studied materials are n-type Czochralski silicon wafers, usually used as substrates for high efficiency photovoltaic applications. The Czochralski puller was first modeled in order to understand how the thermal history experienced by the silicon ingot during crystallization affects the defects generation. This study were validated through the comparison with experimental data using an original method developed in the frame of this work. We then studied the influence of the thermal budget associated to solar cell fabrication processes on the defects population. We thus showed that the nature of lifetime-limiting defects was completely changed depending on the solar cell fabrication process. Besides, we evidenced an unexpected degradation of the electronic properties of n-type Czochralski silicon under illumination, related to the formation of an unknown bulk defect. The formation and deactivation features of this defect were extensively studied. Finally, the main limiting defects being identified and the mechanisms resulting in their formation understood, we propose in a last chapter new characterization techniques for the detection of defective wafers at the beginning of production lines at an industrial throughput
Books on the topic "Czochralski silicon"
Pietila, Douglas A. Evaluation of gold gettering by intrinsic oxide precipitation in Czochralski silicon. 1986.
Find full textStockmeier, Ludwig. Heavily N-Type Doped Silicon and the Dislocation Formation During Its Growth by the Czochralski Method. Fraunhofer IRB Verlag, 2018.
Find full textBook chapters on the topic "Czochralski silicon"
Zulehner, W. "Czochralski Growth of Silicon." In Semiconductor Silicon, 2–23. Berlin, Heidelberg: Springer Berlin Heidelberg, 1989. http://dx.doi.org/10.1007/978-3-642-74723-6_1.
Full textYu, Xuegong, and Deren Yang. "Growth of Crystalline Silicon for Solar Cells: Czochralski Si." In Handbook of Photovoltaic Silicon, 1–45. Berlin, Heidelberg: Springer Berlin Heidelberg, 2017. http://dx.doi.org/10.1007/978-3-662-52735-1_12-1.
Full textYu, Xuegong, and Deren Yang. "Growth of Crystalline Silicon for Solar Cells: Czochralski Si." In Handbook of Photovoltaic Silicon, 129–74. Berlin, Heidelberg: Springer Berlin Heidelberg, 2019. http://dx.doi.org/10.1007/978-3-662-56472-1_12.
Full textLan, Chung-Wen, Chao-Kuan Hsieh, and Wen-Chin Hsu. "Czochralski Silicon Crystal Growth for Photovoltaic Applications." In Advances in Materials Research, 25–39. Berlin, Heidelberg: Springer Berlin Heidelberg, 2009. http://dx.doi.org/10.1007/978-3-642-02044-5_2.
Full textLightowlers, E. C., and Gordon Davies. "Oxygen-Related Luminescence Centres Created in Czochralski Silicon." In Early Stages of Oxygen Precipitation in Silicon, 303–18. Dordrecht: Springer Netherlands, 1996. http://dx.doi.org/10.1007/978-94-009-0355-5_17.
Full textKulkarni, Milind S. "Continuum-Scale Quantitative Defect Dynamics in Growing Czochralski Silicon Crystals." In Springer Handbook of Crystal Growth, 1281–334. Berlin, Heidelberg: Springer Berlin Heidelberg, 2010. http://dx.doi.org/10.1007/978-3-540-74761-1_38.
Full textKakimoto, Koichi. "Czochralski Silicon Single Crystals for Semiconductor and Solar Cell Applications." In Springer Handbook of Crystal Growth, 231–43. Berlin, Heidelberg: Springer Berlin Heidelberg, 2010. http://dx.doi.org/10.1007/978-3-540-74761-1_8.
Full textMüller, Timo, G. Kissinger, P. Krottenthaler, C. Seuring, R. Wahlich, and Wilfried von Ammon. "Precipitation Enhancement of "so Called" Defect-Free Czochralski Silicon Material." In Solid State Phenomena, 11–16. Stafa: Trans Tech Publications Ltd., 2005. http://dx.doi.org/10.4028/3-908451-13-2.11.
Full textChen, Q. S., and G. Y. Deng. "Global Model for 8-inch Czochralski Silicon Crystal Growth Process." In Computational Mechanics, 306. Berlin, Heidelberg: Springer Berlin Heidelberg, 2007. http://dx.doi.org/10.1007/978-3-540-75999-7_106.
Full textMisiuk, A. "Uniform Stress Effect on Nucleation of Oxygen Precipitates in Czochralski Grown Silicon." In Early Stages of Oxygen Precipitation in Silicon, 485–92. Dordrecht: Springer Netherlands, 1996. http://dx.doi.org/10.1007/978-94-009-0355-5_39.
Full textConference papers on the topic "Czochralski silicon"
Hara, Akito, Masaaki Koizuka, Masaki Aoki, and Tetsuo Fukuda. "Hydrogen in As-Grown Czochralski Silicon Crystals." In 1993 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 1993. http://dx.doi.org/10.7567/ssdm.1993.c-7-1.
Full textPeters, Jason E., P. Darrell Ownby, Charles R. Poznich, Jroy C. Richter, and Dennis W. Thomas. "Infrared absorption of Czochralski germanium and silicon." In International Symposium on Optical Science and Technology, edited by Alexander J. Marker III and Mark J. Davis. SPIE, 2001. http://dx.doi.org/10.1117/12.446889.
Full textMallik, Kanad, C. H. De Groot, P. Ashburn, and P. R. Wilshaw. "Semi-insulating Czochralski-silicon for Radio Frequency Applications." In ESSDERC 2006. Proceedings of the 36th European Solid-State Device Research Conference. IEEE, 2006. http://dx.doi.org/10.1109/essder.2006.307731.
Full textLin, Lixia, Jiahe Chen, and Deren Yang. "Internal gettering of copper contamination in Czochralski silicon." In 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT). IEEE, 2010. http://dx.doi.org/10.1109/icsict.2010.5667468.
Full textJiahe Chen, Deren Yang, Xiangyang Ma, and Duanlin Que. "Impurity effect on internal gettering in Czochralski silicon." In 2008 9th International Conference on Solid-State and Integrated-Circuit Technology (ICSICT). IEEE, 2008. http://dx.doi.org/10.1109/icsict.2008.4734659.
Full textCamargo, F., J. A. C. Goncalves, H. J. Khoury, E. Tuominen, J. Harkonen, and C. C. Bueno. "Gamma-radiation dosimetry with magnetic Czochralski silicon diode." In 2007 IEEE Nuclear Science Symposium Conference Record. IEEE, 2007. http://dx.doi.org/10.1109/nssmic.2007.4436428.
Full textYang, Deren, Jinggang Lu, Yijun Shen, Daxi Tian, Xiangyang Ma, Liben Li, and Duanlin Que. "Investigation of as-grown nitrogen-doped Czochralski silicon." In International Conference on Solid State Crystals 2000, edited by Antoni Rogalski, Krzysztof Adamiec, and Pawel Madejczyk. SPIE, 2001. http://dx.doi.org/10.1117/12.435811.
Full textPeters, Jason E., P. Darrell Ownby, Charles R. Poznich, and Jroy C. Richter. "Far-infrared absorption of Czochralski germanium and silicon." In SPIE's International Symposium on Optical Science, Engineering, and Instrumentation, edited by Alexander J. Marker III. SPIE, 1998. http://dx.doi.org/10.1117/12.323764.
Full textSortland, Øyvind S., Moez Jomâa, Mohammed M’Hamdi, Eivind J. Øvrelid, and Marisa Di Sabatino. "Statistical analysis of structure loss in Czochralski silicon growth." In 15th International Conference on Concentrator Photovoltaic Systems (CPV-15). AIP Publishing, 2019. http://dx.doi.org/10.1063/1.5123875.
Full textLiu, Jun. "Thermal Analysis for Designing the Hot-Zone of a Silicon Czochralski Crystal Furnace." In ASME 2012 International Mechanical Engineering Congress and Exposition. American Society of Mechanical Engineers, 2012. http://dx.doi.org/10.1115/imece2012-87078.
Full textReports on the topic "Czochralski silicon"
Jester, T. Photovoltaic Czochralski Silicon Manufacturing Technology Improvements: Annual Subcontract Report, 1 April 1993 - 31 March 1994. Office of Scientific and Technical Information (OSTI), March 1995. http://dx.doi.org/10.2172/41327.
Full textGoodrich, Alan, and Michael Woodhouse. A Manufacturing Cost Analysis Relevant to Single- and Dual-Junction Photovoltaic Cells Fabricated with III-Vs and III-Vs Grown on Czochralski Silicon. Office of Scientific and Technical Information (OSTI), September 2013. http://dx.doi.org/10.2172/1336550.
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