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Dissertations / Theses on the topic 'Czochralski single crystal growth'

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Published: 4 June 2025
Last updated: 15 July 2025

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1

Kearns, Joel K. "Origin Of Growth Twins During Czochralski Growth Of Heavily Doped, Dislocation-Free Single Crystal Silicon." Digital WPI, 2019. https://digitalcommons.wpi.edu/etd-dissertations/514.

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Low voltage power electronics are made from dislocation free silicon heavily doped with arsenic or antimony to provide low electrical resistivity. Attempts to grow crystals with decreased resistivity have led to a higher probability of twinning during growth, so that the crystal no longer possesses the required crystallographic orientation for device fabrication. The source of the twins must be identified so that crystal growth process conditions can be designed to eliminate this defect mechanism, allowing lower resistivity crystals to be grown reliably. In lightly doped crystals, twinning was
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2

Möckel, Robert. "Growth and properties of GdCa4O(BO3)3 single crystals." Doctoral thesis, Technische Universitaet Bergakademie Freiberg Universitaetsbibliothek "Georgius Agricola", 2012. http://nbn-resolving.de/urn:nbn:de:bsz:105-qucosa-90095.

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In der vorliegenden Arbeit wird die Einkristallzüchtung nach dem Czochralskiverfahren von GdCa4O(BO3)3 (GdCOB) beschrieben. Aus insgesamt 18 Zuchtversuchen, bei denen auch die Ziehgeschwindigkeit zwischen 1 und 3mm/h variiert wurde, wurden erfolgreich nahezu perfekte Einkristalle gewonnen. In einigen Kristallen traten jedoch auch Risse oder Einschlüsse auf. Diese enthielten neben Iridium vom Tiegelmaterial auch andere Phasen des Gd2O3–B2O3–CaO-Systems, sowie P und Yb, deren Herkunft unklar ist. Als Hauptziehrichtung wurde die kristallographische b-Achse gewählt, ergänzt durch einige Experiment
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3

Tavakoli, Mohammad Hossein. "Numerical analysis of seeding process during Czochralski growth of oxide single crystals." [S.l.] : [s.n.], 2006. http://se6.kobv.de:8000/btu/volltexte/2006/14.

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4

Reuther, Christoph. "Züchtung und Charakterisierung von Sr3Gd2[BO3]4-Einkristallen." Doctoral thesis, Technische Universitaet Bergakademie Freiberg Universitaetsbibliothek "Georgius Agricola", 2013. http://nbn-resolving.de/urn:nbn:de:bsz:105-qucosa-115924.

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Polykristallines Sr3Gd2[BO3]4 (SGB) konnte mithilfe einer stöchiometrischen Mischung aus SrCO3, Gd2O3 und B2O3 durch zweimaliges Sintern bis 1.350 °C phasenrein erzeugt werden. Ein Exzess von 3 Ma% B2O3 musste der Mischung beigesetzt werden, um das an B2O3 gebundene Wasser auszugleichen [125]. Kristalle des SGB ließen sich mit verschiedenen Orientierungen erfolgreich mit dem Czochralski-Verfaren synthetisieren. Unter Einsatz eines arteigenen, b-orientierten Keimes, einer Translation von 1 mm/h und einer Rotation von 4 /min konnten Kristalle mit guter Qualität bei hoher Erfolgsrate produziert
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5

Koubaa, Taoufik. "Métrologie thermique en vue de la régulation d'un four de tirage de monocristaux d'AsGa." Grenoble 1, 1986. http://www.theses.fr/1986GRE10135.

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Mise au point et automatisation d'un four czochralski pour la croissance de monocristaux gaas. La regulation du diametre des cristaux et l'amelioration de leur qualite ne peuvent etre atteintes qu'en maitrisant la distribution de temperature dans le four, car elle conditionne la forme de l'interface de solidification. Mise au point de deux instrumentations de mesure de temperature. La premiere permet de faire une cartographie des temperatures dans le bain fondu. La deuxieme permet de determiner la temperature sous le creuset, indispensable pour la regulation de la machine de tirage. Descriptio
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6

Hicks, T. W. "Hydrodynamics of liquid encapsulation Czochralski crystal growth." Thesis, University of Bristol, 1988. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.233905.

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7

Brakel, Thomas W. "Mathematical modelling of the Czochralski crystal growth process." Doctoral thesis, University of Cape Town, 2006. http://hdl.handle.net/11427/4868.

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Includes bibliographical references (leaves 142-149).<br>In this document a mathematical model for the Czochralski crystal growth process is developed. The trend in current research involves developing cumbersome numerical simulations that provide little or no understanding of the underlying physics. We attempt to review previous research methods, mainly devoted to silicon, and develop a novel analytical tool for indium antimonide (lnSb) crystal growth. This process can be subdivided into two categories: solidification and fluid mechanics. Thus far, crystal solidification of the Czochralski pr
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8

Nawash, Jalal Mohammad. "A study of the crystal growth of select II-VI oxides by Czochralski and Bridgman techniques." Online access for everyone, 2006. http://www.dissertations.wsu.edu/Dissertations/Fall2006/J_Nawash_121406.pdf.

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9

Henderson, M. B. "Fatigue crack growth in single crystal superalloys." Thesis, University of Oxford, 1992. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.314993.

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10

McComber, Kevin A. "Single-crystal germanium growth on amorphous silicon." Thesis, Massachusetts Institute of Technology, 2011. http://hdl.handle.net/1721.1/69792.

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Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Materials Science and Engineering, 2011.<br>Cataloged from PDF version of thesis.<br>Includes bibliographical references (p. 130-136).<br>The integration of photonics with electronics has emerged as a leading platform for microprocessor technology and the continuation of Moore's Law. As electronic device dimensions shrink, electronic signals encounter crippling delays and heating issues such that signal transduction across large on-chip distances becomes increasingly more difficult. However, these issues may be mitigated by the u
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11

Lin, Chenting. "Single crystal growth and characterization of BSO (Bi12SiO20)." Thesis, Massachusetts Institute of Technology, 1994. http://hdl.handle.net/1721.1/11647.

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12

SIBILIA, MIRTA. "Organic semiconducting single crystal growth on naostructured matrices." Doctoral thesis, Università degli Studi di Trieste, 2017. http://hdl.handle.net/11368/2908140.

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In recent years, the development of the organic electronics has led to the employment of organic materials as the basis for many electronic devices, such as organic light emitting diodes, organic field effect transistors, organic solar cells and radiation sensors. As regards radiation sensors, the studies reported in literature mainly refer to devices based on thin film organic semiconductors, which, however, present problems due to instability, degradation and low reproducibility. Organic single crystals overcame most of the major limitations inherent to thin film-based detectors. In this ex
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13

Srivastava, Ankit. "Void Growth and Collapse in a Creeping Single Crystal." Thesis, University of North Texas, 2011. https://digital.library.unt.edu/ark:/67531/metadc84281/.

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Aircraft engine components can be subjected to a large number of thermo-mechanical loading cycles and to long dwell times at high temperatures. In particular, the understanding of creep in single crystal superalloy turbine blades is of importance for designing more reliable and fuel efficient aircraft engines. Creep tests on single crystal superalloy specimens have shown greater creep strain rates for thinner specimens than predicted by current theories. Therefore, it is necessary to develop a more predictive description of creep processes in these materials for them to be used effectively. Ex
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14

Nunes, Benjamin P. (Benjamin Paul) 1976. "Edge-defined film-fed growth of single-crystal piezoelectrics." Thesis, Massachusetts Institute of Technology, 2001. http://hdl.handle.net/1721.1/17530.

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Thesis (S.M.)--Massachusetts Institute of Technology, Dept. of Materials Science and Engineering, 2001.<br>Includes bibliographical references (leaves 97-99).<br>Many transducer technologies would benefit tremendously from the development of shaped, oriented single-crystals, of a high-strain, piezoelectric material. Recently, unusually high electrostrictive and piezoelectric actuation has been observed in polycrystals and flux-grown <100> single-crystals of ... Using seeded, Edgedefined Film-fed Growth (EFG) and the related Stepanov Technique (ST), low-hysteresis, highstrain, <100> and <111> o
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15

Rittenhouse, Tilghman L. (Tilghman Lee) 1972. "Single crystal growth and characterization of silicon germanium alloys." Thesis, Massachusetts Institute of Technology, 1999. http://hdl.handle.net/1721.1/85267.

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16

Constantinidis, G. "Growth and characterisation of single CuInSe2̲ crystals." Thesis, University of Salford, 1988. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.381646.

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17

Rutkowska, Agnieszka. "Growth and electrochemical characterisation of single-walled carbon nanotubes on single crystal quartz." Thesis, University of Warwick, 2010. http://wrap.warwick.ac.uk/3923/.

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Single walled carbon nanotubes (SWNTs) have unique structural and electronic properties which drive their use in many different fields of modern technology. In electrochemistry, SWNTs have been shown to have outstanding electrochemical characteristic enabling their application in trace level electroanalysis amongst other areas. The SWNT electrochemical activity has been described as originating solely from sidewall structural defects, oxidised open ends and post-growth metal nanoparticles (NPs). However, recent studies have demonstrated the electrochemical activity of pristine and defect-free
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18

Mori, Tatsuo 1961. "Modeling the linkages between heat transfer and microdefect formation in crystal growth : examples of Czochralski growth of silicon and vertical Bridgman growth of bismuth germanate." Thesis, Massachusetts Institute of Technology, 2000. http://hdl.handle.net/1721.1/9113.

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Thesis (Ph.D.)--Massachusetts Institute of Technology, Dept. of Chemical Engineering, 2000.<br>Includes bibliographical references (p. 367-387).<br>Microdefect formation in crystalline material is strongly correlated to the processing conditions for growth of crystals important in microelectronic processing. The geometry and operation conditions for crystal growth systems affect the temperature profile in the crystal and melt, which influences microdefect formation. The objectives of this thesis are to formulate the computational framework to establish the linkage between microdefect formation
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19

Lempidaki, Dimitra. "An investigation of crack growth phenomena in single crystal superalloys." Thesis, Imperial College London, 2006. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.430750.

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20

Seat, Han Cheng. "Growth and characterisation of single-crystal fibres for sensing applications." Thesis, University of Glasgow, 2001. http://theses.gla.ac.uk/6926/.

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The laser heated pedestal growth technique has been successfully employed to grow pure and doped sapphire crystal fibres for characterisation as suitable sensor materials. Source materials used were polycrystalline and crystalline sapphire rods while fibres with typical diameters in the range 80 - 170 mm were grown. Pure sapphire fibres, both a- and c-axis, were found to grow easily with no complications such as melt instability. C-axis fibre growth was readily initiated while a-axis fibres required an appropriate a-axis oriented seed crystal. Dip-coating has been used to prepare suitably coat
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21

Busse, Christian. "Aspects of Crack Growth in Single-Crystal Nickel-Base Superalloys." Licentiate thesis, Linköpings universitet, Mekanik och hållfasthetslära, 2017. http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-143058.

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This Licentiate of Engineering thesis is a product of the results generated in the research project KME-702, which comprises modelling, microstructure investigations and material testing of cast nickel-base superalloys. The main objective of this work is to model the fatigue crack propagation behaviour in single-crystal nickel-base superalloys. To achieve this, the influence of the crystal orientations on the cracking behaviour is assessed. The results show that the crystal orientation is strongly affecting the material response and must be accounted for. Furthermore, a linear elastic crack dr
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22

Lauque, Olivier. "Effects of abrasive waterjet erosion on single crystal silicon." Thesis, Georgia Institute of Technology, 1998. http://hdl.handle.net/1853/16782.

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23

SANTOS, IVANILDO A. dos. "Estudo das soluções sólidas de LiGdsub(1-x)Lusub(x)Fsub(4) visando o crescimento de cristais." reponame:Repositório Institucional do IPEN, 2008. http://repositorio.ipen.br:8080/xmlui/handle/123456789/11656.

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Made available in DSpace on 2014-10-09T12:54:23Z (GMT). No. of bitstreams: 0<br>Made available in DSpace on 2014-10-09T14:09:15Z (GMT). No. of bitstreams: 0<br>Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)<br>Dissertação (Mestrado)<br>IPEN/D<br>Instituto de Pesquisas Energéticas e Nucleares - IPEN/CNEN-SP<br>FAPESP:05/57580-2
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24

Beckett, Douglas J. S. "The exchange interaction and single crystal growth of selected semimagnetic semiconductors." Thesis, University of Ottawa (Canada), 1986. http://hdl.handle.net/10393/4797.

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25

BALDOCHI, SONIA L. "Sintese e crescimento de cristais de BaLiFsub3 puros e dopados com Pb." reponame:Repositório Institucional do IPEN, 1993. http://repositorio.ipen.br:8080/xmlui/handle/123456789/10336.

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26

VIDAL, AUGUSTO T. "Sintese e crescimento de cristais fluoretos dopados com terras raras: LiCAF:Er e BLF:TR (TR = Yb sup(3+), Ce sup(3+), Nd sup(3+))." reponame:Repositório Institucional do IPEN, 2001. http://repositorio.ipen.br:8080/xmlui/handle/123456789/10970.

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27

Aslan, Ozgur. "Numerical modeling of fatigue crack growth in single crystal nickel based superalloys." Paris, ENMP, 2010. http://pastel.archives-ouvertes.fr/pastel-00540893.

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Les composants monocristallins fonctionnant à des températures élevées sont soumis à des conditions de chargement thermo-mécanique sévères. La géométrie et le comportement de ces composants sont très complexes. Un défi majeur est de développer des modèles mathématiques afin de prévoir l'initiation et la propagation de fissures en présence de contraintes importantes et de forts gradients de température. Dans ce cas, le comportement élastoviscoplastique fortement anisotrope du matériau étudié (superalliage à base Ni) doit être pris en compte. Le modèle correspondant doit être en mesure de rendre
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Joshi, Madhura A. "Growth and Characterization of Magnesium Single Crystal for Biodegradable Implant Material Application." University of Cincinnati / OhioLINK, 2015. http://rave.ohiolink.edu/etdc/view?acc_num=ucin1448275234.

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29

Yao, Yao. "Growth, Characterization and Contacts to Ga2O3 Single Crystal Substrates and Epitaxial Layers." Research Showcase @ CMU, 2017. http://repository.cmu.edu/dissertations/921.

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Gallium Oxide (Ga2O3) has emerged over the last decade as a new up-and-coming alternative to traditional wide bandgap semiconductors. It exists as five polymorphs (α-, β-, γ-, δ-, and ε-Ga2O3), of which β-Ga2O3 is the thermodynamically stable form, and the most extensively studied phase. β-Ga2O3 has a wide bandgap of ~4.8 eV and exhibits a superior figure-of-merit for power devices compared to other wide bandgap materials, such as SiC and GaN. These make β-Ga2O3 a promising candidate in a host of electronic and optoelectronic applications. Recent advances in β-Ga2O3 single crystals growth have
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30

Brown, Stephen James. "The Czochrlaski growth and characterisation of single crystals of lead molybdate." Thesis, University of Cambridge, 1994. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.364392.

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31

Wu, Shyang-Chi, and 吳祥祺. "Thermal stress analysis of bulk single crystal during Czochralski growth." Thesis, 1993. http://ndltd.ncl.edu.tw/handle/38663276210331986615.

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碩士<br>國立成功大學<br>機械工程研究所<br>81<br>Most of Single crystals is produced by the Czochralski(cz) procress. The dislocations are frist introduced during the Czochralski growth of GaAs that is crystallographic glid caused by the excessive thermal stress. The dislocations formed in bulk single crystals during Czochralski growth have adverse effect on the performance of electronic and optical devices. Most of studies have used the elastically isotropic model characterized by the young''s
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32

Chiang, Chen Jeng, and 陳正強. "Growth of Lanthanum Galliun Silicate Single Crystals by Czochralski and Measurements." Thesis, 2008. http://ndltd.ncl.edu.tw/handle/15336971890623766032.

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碩士<br>中華技術學院<br>電子工程研究所碩士班<br>96<br>ABSTRACT This study uses the Czochralski Pulling Method to grow high quality langasite (Langasite, LGS) crystal. The method for growing LGS includes of placing a fixed weight LGS materials into a crucible. After that, insulating ceramics and then long seed crystal are placed inside in sequence into the furnace, before the internal cavity is vacuumed to a pressure of -6.5 × 10-3Pa. 90V heating is used to melt the LGS material uniformly. After that, a LGS crystal seed is placed in contact with the surface of the melted liquid LGS material and it is pulled fo
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33

Tsao, Pai-chun, and 曹百君. "Study on the Czochralski growth and phase inversion of LiAlO2 single crystals." Thesis, 2006. http://ndltd.ncl.edu.tw/handle/45728595268657166874.

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碩士<br>國立中山大學<br>材料科學研究所<br>94<br>Three LiAlO2 single crystals were grown by the conventional Czochralski method under the ambient pressure with pull rate with 2.0~3.0 mm/min, rotation rate with 20~30 rpm, and at a certain growth temperature with a home-made furnace. The total lengths of the the LiAlO2 bulks are between 13.3~20 cm, including its cone and the root. The relation between the configuration of LiAlO2 bulk and the ways of the heat transport on the Czochralski method was addressed. In order to identify the inversion properties of the LiAlO2 specimen, 90°C water was utilized to etch bo
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34

Huang, Jung-heng, and 黃中亨. "Study on the Czochralski Growth and characterization of (La,Sr)(Al,Ta)O3 single crystals." Thesis, 2006. http://ndltd.ncl.edu.tw/handle/75691491002931501763.

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碩士<br>國立中山大學<br>材料科學研究所<br>94<br>In this work, two (La,Sr)(Al,Ta) O3 single crystals were grown by the conventional Czochralski pulling method by using different rotation rates and pull rates to find out the optimal growth conditions. The total length of the first (La,Sr)(Al,Ta) O3 crystal is about 8.5cm, and the shape is not symmetrical. The small thermal conductivity of the crystal would lead to small temperature gradient, so the growth rate was slow. The shape of the second crystal was improved by adjusting the thermal field. But, the bottom of the residual has blue color. The blue residual
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Tavakoli, Mohammad Hossein [Verfasser]. "Numerical analysis of seeding process during Czochralski growth of oxide single crystals / vorgelegt von Mohammad Hossein Tavakoli." 2006. http://d-nb.info/982851812/34.

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Ying, Pan Hong, and 潘宏穎. "Numerical Simulation of Czochralski Crystal Growth." Thesis, 1996. http://ndltd.ncl.edu.tw/handle/07071767800199926626.

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He, Jiajie. "Segregation control in Czochralski crystal growth." 2002. http://www.library.wisc.edu/databases/connect/dissertations.html.

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yhwang and 王裕鑫. "Growing YAG Single Crystal with Czochralski Method." Thesis, 2009. http://ndltd.ncl.edu.tw/handle/97545470215350201566.

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碩士<br>中華技術學院<br>機電光工程研究所在職專班<br>97<br>This study investigated the single crystal growing process of Ytterbium doped Yttrium Aluminum Garnet (Yb:YAG) with the Czochralski method. An automatic control program was developed to control the process during the crystal growing. In this work, the computer program along with the weighting system and the automatic controller were integrated to control the power of the crystal growth system through a communication interface. This system was able to control the temperature of the process automatically. Therefore, the size and quality of the finished crys
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Chen, Chih-Yung, and 陳智勇. "Lithium Noibate crystal growth by the Czochralski method." Thesis, 2004. http://ndltd.ncl.edu.tw/handle/22510190790770854790.

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Lin, Ming-Hsien. "Segregation and shape control in Czochralski crystal growth." 1995. http://catalog.hathitrust.org/api/volumes/oclc/32875638.html.

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hochunhsien and 何俊賢. "crystal growth of lithium niobate by Zone-Leveling Czochralski Method." Thesis, 2003. http://ndltd.ncl.edu.tw/handle/93885318419782719953.

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碩士<br>國立臺灣大學<br>化學工程學研究所<br>91<br>Lithium niobate(LN) is one of the most important opto-electronic in applications including optical communication, optical storage, surface -acoustic-wave etc. By using traditional Czochralski method, it can not get good diameter control in crystal growth process. And with segregation effect. It can not grow single crystal homogeneous in composition. We have grown Bismuth Silicate(BSO) crystal by using Zone-Leveling Czochralski(ZLCz) method, and have a good diameter control. We attempt to grow LN by using ZLCz method. In this research proj
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Chen, Hung Jen, and 陳煌仁. "Crystal Growth of Bismuth Silicate by Zone Leveling Czochralski Method." Thesis, 2002. http://ndltd.ncl.edu.tw/handle/30502923516452390582.

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碩士<br>國立臺灣大學<br>化學工程學研究所<br>90<br>Nonlinear optical (NLO) crystals are important components in optoelectronic devices, and their growth is also a critical technology in the industry. Particularly, with the fast development of the optical information processing, computing, and storage, the need of photorefractive materials increases dramatically. Extensive research has been focused in this field. However, the quality of the crystals is often a bottleneck in its applications. By traditional Czochralski method, it is difficult to get good diameter control during growth. And with segregation effec
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Chu, Hsin-chi, and 朱信旗. "Numerical simulation during an inductively heated Czochralski sapphire crystal growth system." Thesis, 2008. http://ndltd.ncl.edu.tw/handle/99169550844455278658.

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碩士<br>國立中央大學<br>機械工程研究所<br>96<br>Sapphire single crystals are widely used in variety of modern high- tech applications. Among crystal growth methods, the Czochralski single crystal growth method is a good commercial method for growing the larger, high-optical-quality sapphire crystal. The finite element software COMSOL Multiphysics is employed to simulate the melt temperature and velocity distribution during an inductively heated of sapphire crystal growth process using CZ. Temperature and velocity field in an inductively heated Czochralski crystal growth furnace is investigated numerically du
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Nguyen, Tran-Phu, and 阮陳富. "Numerical simulation for large size sapphire crystal growth during Czochralski method." Thesis, 2018. http://ndltd.ncl.edu.tw/handle/e987d3.

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博士<br>國立中央大學<br>機械工程學系<br>107<br>Sapphire has become an important material for applications in modern optic-electronic technology because of its special optical, mechanical properties and the demand for sapphire substrates has increased significantly been enlarged in recent years. The Czochralski (CZ) technique plays an important role in the industrial growth of sapphire nowadays. However, the primary challenges faced in the manufacturing of sapphire substrates are to produce large size, low bubble defect and low thermal stress crystal. In this study, the thermal and flow transport and the sol
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Shu-ShaoWang and 王書邵. "Numerical Analysis of Thermo-Fluid Flow and Crystal/Melt Interface Shape in Czochralski Crystal Growth." Thesis, 2014. http://ndltd.ncl.edu.tw/handle/24220859661215267918.

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碩士<br>國立成功大學<br>工程科學系<br>102<br>Nowadays, the Czochralski (CZ) method is the most commonly used scheme for the single crystal growth of silicon, which is good for growing a large and high-quality crystal. The study is to simulate the furnace temperature and argon velocity distributions at different stages of silicon single-crystal growth, utilizing the Czochralski method. The numerical simulation is made by employing the finite element software COMSOL Multiphysics. Heat shields can prevent the heat loss in the upper portion of the furnace and guide the argon flow to make the SiO2 deposition de
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Hsieh, Yao-Te, and 謝耀德. "Numerical Simulation of Large-Size Sapphire Crystal Growth with the Czochralski Process." Thesis, 2015. http://ndltd.ncl.edu.tw/handle/49419244343293617669.

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碩士<br>國立中央大學<br>機械工程學系<br>103<br>The Czochralski method is one of the major technologies used for high quality single crystal growth. Recently, this technology has been applied for industrial larger size sapphire crystal growth. In order to ensure the quality of the crystal growth, we must gain further insight into the flow behavior of the molten melt and heat transfer mechanisms in Czochralski furnace. During the large size sapphire crystal growth, the temperature of furnace is too high to be observed in experiments directly. Therefore, numerical simulation is necessary in order to reduce the
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Thu, Nguyen Thi Hoai, and 阮氏懷秋. "Numerical Study of Impurity Transport during Czochralski Arsenic-doped Silicon Crystal Growth." Thesis, 2014. http://ndltd.ncl.edu.tw/handle/53528976148509821912.

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碩士<br>國立中央大學<br>機械工程學系<br>102<br>Nowadays the Czochralski (Cz) technique has become a main method to grow large single silicon crystal. In order to enhance the quality of crystal, the level of oxygen concentration in the ingot as well as its electric properties has to be controlled. The optimal resistivity for the silicon epitaxial wafers can be obtained by adding directly some common dopants (boron, arsenic, phosphorus, antimony …) into the liquid silicon during the growth process. In this study, the effect of doping arsenic on the oxygen concentration along the freezing interface is numerica
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Jyun-HaoHuang and 黃俊豪. "COMSOL Analysis on Heat and Mass Transfer and Crystal/Melt Interface Shape in Czochralski Crystal Growth." Thesis, 2015. http://ndltd.ncl.edu.tw/handle/3d4579.

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碩士<br>國立成功大學<br>工程科學系<br>103<br>Czochralski method is the most commonly used to grow large single crystals of silicon. In the growth process of silicon single crystal, due to the furnace body of very high temperature, the thermal flow within the melt pool cannot be observed directly. Consequently, the numerical simulation is employed to control the situation in the furnace, which could help to reduce the cost and time of crystal-growth experiments. The study is to use COMSOL Multiphysics software to simulate the thermal flow in the furnace of Czochralski method during the crystal growth. It is
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Chen, Chu-Su, and 陳鏡宇. "Growth of Solar Graded Single Crystalline Silicon by Crystalline Czochralski Method." Thesis, 2010. http://ndltd.ncl.edu.tw/handle/um4g4r.

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碩士<br>國立虎尾科技大學<br>光電與材料科技研究所<br>98<br>This study investigates the influence of temperature, seed pulling rate, diameter control, and rising speeds and rotating rate of crucible on the solid - liquid interface quality during the growth of single crystal by Czochralski method.。 In this study, regarding the heat flow field in the furnace body and the diameter control of ingot, increasing the rotation speed of pillar crystal will lead to more intensive isotherm lines below the pillar crystal region. In this region the temperature changes very violently, where the cover bowl symptoms occur when ing
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Chen, Bing-Jung, and 陳炳忠. "Numerical Simulation of thermal and microdefect distributions during the Czochralski Si-Crystal Growth." Thesis, 2004. http://ndltd.ncl.edu.tw/handle/32204214799386084375.

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碩士<br>國立中央大學<br>機械工程研究所<br>92<br>To clear the characteristics of the Czochralski (Cz) furnace for the single-crystal growth of silicon, a set of global analyses of momentum, heat and mass transfer in small Cz furnaces is carried out using the finite-element method. Consider the global system to be a steady state, axisymmetric system with laminar flow, and ideal gas condition. Convective and conductive heat transfers, radiative heat transfer between diffuse surfaces and the Navier–Stokes equations for gas are all combined and solved together. In this work, heat shield is installed in the Czoc
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