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Journal articles on the topic 'Czochralski single crystal growth'

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Published: 4 June 2025

Last updated: 1 August 2025

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1

Derby, Jeffrey J. "Theoretical Modeling of Czochralski Crystal Growth." MRS Bulletin 13, no. 10 (1988): 29–35. http://dx.doi.org/10.1557/s0883769400064162.

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The growth of single crystals with precisely controlled properties is one of the most demanding goals of modern materials processing, and its realization depends on the application of fundamentals from solid-state physics, chemistry, thermodynamics, and transport phenomena. Bulk semiconductor substrates and many high-power solid-state laser host materials are typically produced by solidification from the melt. The quality of the crystals produced this way hinges on process conditions which are predominantly determined by the transport of heat, mass, and momentum in the melt and crystal. Accura

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2

Cong, Hengjiang, Huaijin Zhang, Shangqian Sun, et al. "Morphological study of Czochralski-grown lanthanide orthovanadate single crystals and implications on the mechanism of bulk spiral formation." Journal of Applied Crystallography 43, no. 2 (2010): 308–19. http://dx.doi.org/10.1107/s0021889809052339.

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Single crystals of monoclinic Nd:LaVO4with dimensions up to Ø28 × 21 mm have been grown from the near-stoichiometric melt by the Czochralski method, making use of various seed orientations that are perpendicular to the (010), (10{\overline 1}), (001) and (00{\overline 1}) crystal planes. A sample was also prepared with the seed orientation in an arbitrary direction relative to the crystal. The anisotropic properties of the crystal are manifested in the growth morphology of the as-grown crystals, where different degrees of bulk spiral growth were observed. It was also found that employing the (

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3

Tang, Xia, Botao Liu, Yue Yu, Sheng Liu та Bing Gao. "Numerical Analysis of Difficulties of Growing Large-Size Bulk β-Ga2O3 Single Crystals with the Czochralski Method". Crystals 11, № 1 (2020): 25. http://dx.doi.org/10.3390/cryst11010025.

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The difficulties in growing large-size bulk β-Ga2O3 single crystals with the Czochralski method were numerically analyzed. The flow and temperature fields for crystals that were four and six inches in diameter were studied. When the crystal diameter is large and the crucible space becomes small, the flow field near the crystal edge becomes poorly controlled, which results in an unreasonable temperature field, which makes the interface velocity very sensitive to the phase boundary shape. The effect of seed rotation with increasing crystal diameter was also studied. With the increase in crystal

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4

Tang, Xia, Botao Liu, Yue Yu та ін. "Effect of Internal Radiation on Process Parameters in the Global Simulation of Growing Large-Size Bulk β-Ga2O3 Single Crystals with the Czochralski Method". Crystals 11, № 7 (2021): 763. http://dx.doi.org/10.3390/cryst11070763.

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As a crystal grows, the temperature distribution of the crystal and melt will change. It is necessary to study the dynamic process of single-crystal growth. Due to the relatively low crystallization rates used in the industrial Czochralski growth system, a steady state is used to compute the temperature distribution and melt flow. A two-dimensional axisymmetric model of the whole Czochralski furnace was established. The dynamic growth process of large-size bulk β-Ga2O3 single crystal using the Czochralski method has been numerically analyzed with the parameter sweep method. In this paper, two

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5

Golubovic, Aleksandar, Slobodanka Nikolic, Stevan Djuric, and Andreja Valcic. "The growth of ruby single crystals." Journal of the Serbian Chemical Society 70, no. 1 (2005): 87–95. http://dx.doi.org/10.2298/jsc0501087g.

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Ruby (Cr:Al2O3) single crystals were grown by the Czochralski technique in an argon atmosphere. The critical crystal diameter dc = 1.0 cm and the critical rate of rotation ?c = 20 rpm were calculated by equations of the hydrodynamics of the melt. The rate of crystal growth was experimentally obtained to be 2.7 mm/h. For chemical polishing, conc. H3PO4 at 593 K for an exposure of 3 hours was determined. Conc. H3PO4 at 523 K for an exposure of 3 h was found to be a suitable etching solution. The lattice parameters a = 0.47627(6) nm and c = 1.301(1) nm were determined by X-ray powder diffraction.

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Golubovic, Aleksandar, Slobodanka Nikolic, Stevan Djuric, and Andreja Valcic. "The growth of sapphire single crystals." Journal of the Serbian Chemical Society 66, no. 6 (2001): 411–18. http://dx.doi.org/10.2298/jsc0106411g.

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Sapphire (Al2O3) single crystals were grown by the Czochralski technique both in air and argon atmospheres. The conditions for growing sapphire single crystals were calculated by using a combination of Reynolds and Grash of numbers. Acritical crystal diameter dc = 20 mm and the critical rate of rotation c = 20 rpm were calculated from the hydrodynamics of the melt. The value of the rate of crystal growth was experimentally found to be 3.5 mm/h. According to our previous experiments, it was confirmed that three hours exposures to conc. H3PO4 at 593 K was suitable for chemical polishing. Also, t

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7

Golubovic, Aleksandar, Slobodanka Nikolic, Rados Gajic, Stevan Djuric, and Andreja Valcic. "The growth of Nd: YAG single crystals." Journal of the Serbian Chemical Society 67, no. 4 (2002): 291–300. http://dx.doi.org/10.2298/jsc0204291g.

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Y3Al5O12 doped with 0.8%wt.Nd (Nd:YAG) single crystals were grown by the Czochralski technique under an argon atmosphere. The conditions for growing the Nd:YAG single crystals were calculated by using a combination of Reynolds and Grashof numbers. The critical crystal diameter and the critical rate of rotation were calculated from the hydrodynamics of the melt. The crystal diameter Dc=1.5 cm remained constant during the crystal growth while the critical rate of rotation changed from ?c=38 rpm after necking to ?c=13 rpm at the end of the crystal. The value of the rate of crystal growth was expe

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8

Kumar, Sonu, and Binay Kumar. "Growth of an 8-hydroxyquinoline single crystal by a modified Czochralski growth technique, and crystal characterization." CrystEngComm 20, no. 5 (2018): 624–30. http://dx.doi.org/10.1039/c7ce01857f.

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9

Ma, Zhi Xin, Xiao Guo Bi, Xu Dong Liu, Xiao Dong Li, Ji Guang Li, and Xu Dong Sun. "Preliminary Exploration on the Preparation of LYSO:Ce Single Crystal Using Verneuil Method." Materials Science Forum 1003 (July 2020): 247–53. http://dx.doi.org/10.4028/www.scientific.net/msf.1003.247.

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LYSO:Ce single crystal was widely manufactured by Czochralski method. Considering its high cost and the pollution of the crucible, we tried to prepare the crystal by Verneuil method. Unlike Czochralski method, the Verneuil method need the powders with excellent fluidity and high purity. By comparing the powders annealed at 1100°C,1200°C,1300°C,1400°C and 1500°C, we can obtained the needed powders at 1500°C. We also increased the content of silica to satisfy the volatilization in crystal growth process. The single crystal was prepared by changing the growth parameter. We investigated the phase

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10

Verezub, N. A., L. V. Kozhitov, T. T. Kondratenko, A. I. Prostomolotov, and I. V. Silaev. "Technology and thermomechanics in growing tubular silicon single crystals." Izvestiya Vysshikh Uchebnykh Zavedenii. Materialy Elektronnoi Tekhniki = Materials of Electronics Engineering 25, no. 3 (2022): 202–13. http://dx.doi.org/10.17073/1609-3577-2022-3-202-213.

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The problem of growing high-resistance low-dislocation tubular silicon single crystals for non-planar manufacturing technologies of epitaxial p-n junctions and the production of new-generation power semiconductor devices is considered. The possibilities of Stepanov method for growing volumetric profiled crystalline products, the application of which is based on the use of shapers of various designs, are discussed. In particular, the shortcomings of shapers associated with the melt contamination by foreign particles and impurities are discussed. Therefore, the main attention is paid to the use

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11

Phuc, Le Tran Huu, HyeJun Jeon, Nguyen Tam Nguyen Truong, and Jung Jae Hak. "Improving the Dipping Step in Czochraski Process Using Haar-Cascade Algorithm." Electronics 8, no. 6 (2019): 646. http://dx.doi.org/10.3390/electronics8060646.

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Czochralski crystal growth has become a popular technique to produce pure single crystals. Many methods have also been developed to optimize this process. In this study, a charge-coupled device camera was used to record the crystal growth progress from beginning to end. The device outputs images which were then used to create a classifier using the Haar-cascade and AdaBoost algorithms. After the classifier was generated, artificial intelligence (AI) was used to recognize the images obtained from good dipping and calculate the duration of this operating. This optimization approach improved a Cz

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12

Kobeleva, Svetlana P., Ilya M. Anfimov, Vladimir S. Berdnikov, and Tatyana V. Kritskaya. "Possible causes of electrical resistivity distribution inhomogeneity in Czochralski grown single crystal silicon." Modern Electronic Materials 5, no. (1) (2019): 27–32. https://doi.org/10.3897/j.moem.5.1.46315.

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Electrical resistivity distribution maps have been constructed for single crystal silicon wafers cut out of different parts of Czochralski grown ingots. The general inhomogeneity of the wafers has proven to be relatively high, the resistivity scatter reaching 1–3 %. Two electrical resistivity distribution inhomogeneity types have been revealed: azimuthal and radial. Experiments have been carried out for crystal growth from transparent simulating fluids with hydrodynamic and thermophysical parameters close to those for Czochralski growth of silicon single crystals. We show that a possible cause

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13

Zhang, H., L. L. Zheng, V. Prasad, and D. J. Larson. "Diameter-Controlled Czochralski Growth of Silicon Crystals." Journal of Heat Transfer 120, no. 4 (1998): 874–82. http://dx.doi.org/10.1115/1.2825906.

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A thermal-capillary dynamic model for Czochralski (Cz) growth of silicon single crystal is presented that accounts for convection in the melt, conduction in the crystal, and radiation from the melt free surface and crystal. The shapes of the crystal/melt interface, moving crystal, and free surface are governed by the balance of energy and stresses. Decrease of the melt volume as the crystal is grown is also considered. A control algorithm based on the adjustment of the pull rate and/or crucible wall temperature has been developed. The diameter of the crystal can remain constant or vary with ti

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14

KHIM, Seunghyun. "Brief Introduction to Single Crystal Growth Techniques." Physics and High Technology 31, no. 5 (2022): 10–16. http://dx.doi.org/10.3938/phit.31.015.

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This article aims to introduce several synthesis methods to grow single-crystalline samples, which are widely used in experimental condensed matter physics studies. In order to understand the crystal growth in high-temperature melts, the concept of congruent/incongruent melting is explained based on a binary phase diagram. Then principles and practices of the Czochralski, flux-growth, and floating-zone growth methods are described. In addition, the chemical vapor transport method is briefly mentioned.

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15

Prostomolotov, A. I., N. A. Verezub, and M. G. Milvidskii. "Thermal Optimization of Cz Silicon Single Crystal Growth." Solid State Phenomena 156-158 (October 2009): 217–22. http://dx.doi.org/10.4028/www.scientific.net/ssp.156-158.217.

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In an application to large diameter Czochralski (CZ) silicon (Si) single crystal growing the influence on crystal temperature field of various thermal shield assemblies located near to its surface is discussed. By means of mathematical modeling the computer model of thermal processes in an application to a hot zone of "Redmet-90" puller [1], intended for 200 and 300 mm diameter Si single crystal growth is developed. The role of the ring shield and the shield assembly, consisting of two shields (an internal cone and an external one is repeating the crucible shape) and being as a basis of some p

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16

Golubovic, Aleksandar, Slobodanka Nikolic, Rados Gajic, Stevan Djuric, and Andreja Valcic. "The growth and optical properties of Bi12SiO20 single crystals." Journal of the Serbian Chemical Society 67, no. 4 (2002): 279–89. http://dx.doi.org/10.2298/jsc0204279g.

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Single crystals of Bi12SiO20 were grown from the melt by the Czochralski technique. The critical crystal diameter dc=10 mm and the critical rate of rotation ?c=20 rpm were calculated by equations from the hydrodynamics of a melt. The rate of crystal growth was experimentally obtained to be 5 mm/h. The crystal growth was in the [111] direction. The lattice parameter a=1.0096nm was determined by X-ray powder diffraction. The reflectance spectra were recorded in the wave numbers range 20?5000 cm-1 at different temperatures. For all the recorded spectra the values of the vibrational TO and LO mode

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17

Lim, Chang-Sung. "Single crystal growth of ZnWO4by the Czochralski method and characterization." Analytical Science and Technology 23, no. 2 (2010): 103–8. http://dx.doi.org/10.5806/ast.2010.23.2.103.

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18

TSUKIOKA, MASAYUKI, SHINICHIRO KUROIWA, YASUO TANOKURA, MICHIKO KOBAYASHI, MASAZI SHIMAZU, and SADAO TSUTSUMI. "GROWTH OF UNCRACKED BARIUM-SODIUM NIOBATE CRYSTALS." Modern Physics Letters B 04, no. 16 (1990): 1017–21. http://dx.doi.org/10.1142/s0217984990001288.

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It is known that cracking occurs in Barium-Sodium Niobate, Ba 4 Na 2 Nb 10O30 (BNN), during Czochralski (cz) growth. This is due mainly to lattice distortions associated with the ferroelectric phase transition. We have studied the cz crystal growth condition for BNN without cracking, and found that high quality single crystals of BNN without cracking can be grown by using Gd-doped starting melt, i.e., Ba 4 Na 2 Nb 10O30-Ba3NaGdNb10O30 solid solution. In order to confirm the effect of Gd doping on the crystalline quality, Gd concentrations were measured by ICP for both the cz single crystal sam

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19

Arivanandhan, M., G. Rajesh, A. Tanaka, et al. "Bulk Growth of InGaSb Alloy Semiconductor under Terrestrial Conditions: A Preliminary Study for Microgravity Experiments at ISS." Defect and Diffusion Forum 323-325 (April 2012): 539–44. http://dx.doi.org/10.4028/www.scientific.net/ddf.323-325.539.

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As a preliminary experiment for the growth of InGaSb alloy crystals under microgravity at International Space Station (ISS), bulk crystal was grown under terrestrial condition using the same gradient heating furnace (GHF). Czochralski grown GaSb <111>B single crystal was used as a seed and feed crystals for the growth of InGaSb bulk crystals. During the growth, heat pulses were intentionally introduced periodically to create the growth striations. From the striations, the growth rate of the grown crystal was estimated. The results show that the growth rate was gradually increased from th

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20

Weng, W. S., L. S. Yip, I. Shih, and C. H. Champness. "Crystal growth of CuInSe2 by the Bridgman method." Canadian Journal of Physics 67, no. 4 (1989): 294–97. http://dx.doi.org/10.1139/p89-051.

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Single crystals of CuInSe2 have been fabricated by the vertical Bridgman method. A conventional Czochralski crystal-pulling system was adapted for this purpose. An accelerated crucible-rotation technique was employed for a better mixing of the melt during the growth. Void- and crack-free crystal grains with an area as large as 50 mm2 and a thickness of more than 5 mm could be selectively cut from the ingots. From room-temperature Hall-effect measurements, mobility values as large as 73 cm2 ∙ V−1 ∙ s−1 were obtained for the present samples. X-ray diffraction studies suggested that abrasive poli

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21

Golubovic, A., R. Gajic, Z. Dohcevic-Mitrovic, and S. Nikolic. "Nd pronounced anharmonicity in IR spectra of CaWO4 single crystals." Science of Sintering 38, no. 3 (2006): 265–72. http://dx.doi.org/10.2298/sos0603265g.

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CaWO4 and Nd:CaWO4 (0.8 at. % Nd) single crystals were grown from the melt by the Czochralski technique in air. The crystal growth parameters dc and ?c were calculated by equations from the hydrodynamics of the melt, whereas the rate of crystal growth was experimentally obtained. The infrared reflectance spectra of Nd:CaWO4 and CaWO4 single crystals were recorded in the range 50-5000 cm-1 at room and liquid nitrogen temperatures. Two oxygen Eu modes showed a splitting. That especially concerns one of them where the splitting is even more pronounced with the Nd doping. Instead of the earlier at

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22

Zhuang, Naifeng, Wenbing Chen, Lijun Shi, et al. "A new technique to grow incongruent melting Ga:YIG crystals: the edge-defined film-fed growth method." Journal of Applied Crystallography 46, no. 3 (2013): 746–51. http://dx.doi.org/10.1107/s002188981301025x.

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Crystalline yttrium iron garnet (YIG) is an important magneto-optical material. However, this crystal is an incongruent melting compound. As is well known, compared to the crystal growth of a congruent melting compound by using the Czochralski method, the crystal growth of an incongruent melting compound is more difficult. In this work, a system for growing Ga:YIG single crystals by the edge-defined film-fed growth (EFG) method was designed and constructed, and the mechanism of crystal growth was also preliminarily studied. The Ga3+dopant concentration, the Curie temperature and the transmissi

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23

Loix, F., Francois Dupret, A. de Potter, R. Rolinsky, N. Van den Bogaert, and V. Regnier. "Optimization of Silicon Ingot Quality by the Numerical Prediction of Bulk Crystal Defects." Solid State Phenomena 156-158 (October 2009): 205–10. http://dx.doi.org/10.4028/www.scientific.net/ssp.156-158.205.

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In this paper a numerical model is investigated to predict and optimize the quality of Czochralski-grown silicon single crystals. The different mechanisms governing the formation, transport, recombination, nucleation and growth of point- and micro-defects in the crystal are put together with a view to getting a reliable picture of the entire set of physical effects governing the crystal quality. Numerical experiments are conducted to illustrate the model predictions.

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24

Vegad, Mitesh, and N. M. Bhatt. "Review of some Aspects of Single Crystal Growth Using Czochralski Crystal Growth Technique." Procedia Technology 14 (2014): 438–46. http://dx.doi.org/10.1016/j.protcy.2014.08.056.

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25

Kamada, Kei, Rei Sasaki, Taketoshi Tomida, et al. "Crucible-Free Growth of Bulk b-Ga2O3 Single-Crystal Scintillator under Oxidizing Atmosphere." Crystals 13, no. 6 (2023): 921. http://dx.doi.org/10.3390/cryst13060921.

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β-Ga2O3 is a well-known semiconductor material for power devices and other applications. Recently, β-Ga2O3 has also been reported as a scintillator material with a light yield of approximately 8400 ph./MeV, scintillation decay time of <1 μs, and density of 6.44 g/cm3. In this study, 45 cm diameter β-Ga2O3 single crystals were prepared via oxide crystal growth using the cold crucible (OCCC) method under various oxygen partial pressures. In the OCCC method, as in the cold crucible method, a high frequency is applied directly to the oxide materials, which are heated and melted, and the melt is

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26

Yoshikawa, A., Y. Kagamitani, D. A. Pawlak, H. Sato, H. Machida, and T. Fukuda. "Czochralski growth of Tb3Sc2Al3O12 single crystal for Faraday rotator." Materials Research Bulletin 37, no. 1 (2002): 1–10. http://dx.doi.org/10.1016/s0025-5408(01)00788-7.

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27

Kouta, H., Y. Kuwano, K. Ito та F. Marumo. "β-BaB2O4 single crystal growth by Czochralski method. II". Journal of Crystal Growth 114, № 4 (1991): 676–82. http://dx.doi.org/10.1016/0022-0248(91)90415-2.

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28

Okano, Yasunori, Hiroyuki Wada, Tsuguo Fukuda, and Shintaro Miyazawa. "Bulk Single Crystal Growth of Bi12TiO20by the Czochralski Method." Japanese Journal of Applied Physics 30, Part 2, No. 7B (1991): L1307—L1309. http://dx.doi.org/10.1143/jjap.30.l1307.

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29

Barnes, John E., and Kevin P. Trumble. "Tri-arc Czochralski growth of single crystal molybdenum disilicide." Journal of Crystal Growth 160, no. 1-2 (1996): 66–70. http://dx.doi.org/10.1016/0022-0248(95)00900-0.

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Riscob, B., Indranil Bhaumik, S. Ganesamoorthy, et al. "Crystal growth of Ru-doped congruent LiNbO3and investigation of crystalline perfection and optical properties." Journal of Applied Crystallography 48, no. 6 (2015): 1753–60. http://dx.doi.org/10.1107/s1600576715018464.

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Single crystals of undoped and Ru-doped congruent LiNbO3(LN) were successfully grown by the Czochralski method. The axial and radial gradient of the radio frequency furnace was controlled in order to obtain crack-free single crystals. Wafers were cut from the grown Ru-doped single crystal at different axial positions along the growth direction and subjected to various characterization analyses. Good optical homogeneity and low residual strain in the grown crystal is confirmed by the conoscopy patterns. Further, it is confirmed that Ru doping does not influence the optical sign of the crystal.

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31

Kamaruddin, W. H. A., Hamdan Hadi Kusuma, and Zuhairi Ibrahim. "Effect of New Thermal Insulation to the Growth of LiNbO₃ Single Crystal by Czochralski Method." Advanced Materials Research 701 (May 2013): 108–12. http://dx.doi.org/10.4028/www.scientific.net/amr.701.108.

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Single crystal of LiNbO3has been successfully grown by the Czochralski method in an air atmosphere with a r.f heating crystal growth system namely Automatic Diameter Control Crystal Growth System (ADC-CGS). This paper reports on the effect of new thermal insulation on the growth process of LiNbO3single crystal. The effect of hot zone thermal insulation design was investigated. The conditions required to grow high quality LiNbO3single crystals are described. A set of crystal growth processes were conducted with the rotation rate of the seed at 15 rpm and the pulling rate at 2.0 mm/hr kept const

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LI, Y. R., S. Y. WU, P. LAN, and C. H. FENG. "NATURAL CONVECTION DURING CZOCHRALSKI SINGLE CRYSTAL GROWTH OF SUPERCONDUCTING MATERIALS." Modern Physics Letters B 18, no. 30 (2004): 1533–36. http://dx.doi.org/10.1142/s0217984904008006.

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To understand the characteristics of the flow, heat and mass transfer in the Ba - Cu - O melt for superconducting material YBa 2 Cu 3 O 2-x ( Y 123) single crystal growth by Czochralski method, this paper presents the numerical simulations of the two-dimension unsteady flow, thermal and Y concentration fields in the Ba - Cu - O melt for Y123 single crystal growth. The results show that the flow is steady at a small temperature difference. As the temperature difference in the radial direction increases, the simulation can predict oscillatory flow.

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Nawash, Jalal. "Crystal Growth of CdTe2O5 by a Modified Bridgman Technique." MRS Proceedings 1799 (2015): 13–18. http://dx.doi.org/10.1557/opl.2015.478.

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ABSTRACTThe growth of CdTe2O5 single crystals using a modified Bridgman technique in a RF furnace was attempted. A platinum/gold crucible was used to melt the powder mixture in a customized insulated chamber to provide an adequate vertical thermal gradient. Growths resulted in mica-shaped single crystals that were extracted and investigated. Some optical and electrical properties were studied. Czochralski (CZ) method was also tried but returned very small crystals at best, whereas evaporation of CdO and/or TeO2 presented another challenge.

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Wu, Dan, Ning Xia, Keke Ma та ін. "Numerical Simulation of β-Ga2O3 Single Crystal Growth by Czochralski Method with an Insulation Lid". Crystals 12, № 12 (2022): 1715. http://dx.doi.org/10.3390/cryst12121715.

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The effect of an insulation lid on the growth of 4-inch β-Ga2O3 single crystals by the Czochralski method is analyzed by numerical simulation. The insulation lid mainly hinders upward radiant heat transfer from the melt and crucible and increases the axial temperature gradient in the crystal. Such benefits make the melt/crystal interface convex, which is conducive to suppressing spiral growth and growing large crystals with high quality. Materials with low thermal conductivity λ and low emissivity ε are the optimal choices for making an insulation lid. The inner hole has a great influence on t

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35

Uno, Eiichi, Izumi Fusegawa, and Hirotoshi Yamagishi. "Characterization of Interstitial Oxygen Striations in Silicon Single Crystals by the Micro-FT-IR Method." Applied Spectroscopy 47, no. 9 (1993): 1488–91. http://dx.doi.org/10.1366/0003702934067711.

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We will demonstrate that our micro-FT-IR mapping system is highly effective for investigating the behavior of interstitial oxygen (Oi) in Czochralski-grown silicon single crystals. The micro-FT-IR system experiences high space resolution, and Oi striations of as-grown silicon single crystals or of oxygen micro-precipitation after a thermal treatment are quantitatively measured. Oi micro-distribution profiles of as-grown crystals exhibit regular or irregular intervals and height, depending upon their crystal growth conditions. Oxygen micro-precipitations along growth striations are dependent up

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36

Qiang, Zhang, Deng Peizhen, and Gan Fuxi. "Crystal growth and dislocation arrangement of Czochralski alexandrite (BeAl2O4:Cr) single crystals." Crystal Research and Technology 25, no. 4 (1990): 385–90. http://dx.doi.org/10.1002/crat.2170250407.

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37

Łukasiewicz, T., and A. Majchrowski. "Czochralski growth of Li2B4O7 single crystals." Acta Physica Hungarica 70, no. 3 (1991): 189–90. http://dx.doi.org/10.1007/bf03156264.

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38

Ivanova, L. D., and Yu V. Granatkina. "Czochralski growth of antimony single crystals." Inorganic Materials 43, no. 3 (2007): 247–52. http://dx.doi.org/10.1134/s0020168507030077.

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39

Fan, X., and S. Kou. "Czochralski growth of NiAl single crystals:." Journal of Crystal Growth 204, no. 1-2 (1999): 108–14. http://dx.doi.org/10.1016/s0022-0248(99)00196-7.

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Guo, F. Y., W. H. Zhang, M. Ruan, J. B. Kang, and J. Z. Chen. "Czochralski growth of Gd2Ti2O7 single crystals." Journal of Crystal Growth 402 (September 2014): 94–98. http://dx.doi.org/10.1016/j.jcrysgro.2014.05.011.

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Doležal, P., A. Rudajevová, K. Vlášková, et al. "Czochralski growth of LaPd2Al2 single crystals." Journal of Crystal Growth 475 (October 2017): 10–20. http://dx.doi.org/10.1016/j.jcrysgro.2017.05.016.

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Gusev, Andrey Olegovich, and Olga Semenovna Mazhorova. "Quasi-steady-state numerical simulation of Czochralski single crystal growth." Keldysh Institute Preprints, no. 59 (2023): 1–20. http://dx.doi.org/10.20948/prepr-2023-59.

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We consider the steady-state growth of a single crystal by the liquid encapsulated Czochralski method. The mathematical model accounts for heat transfer in the crystal, melt and encapsulant, radiative heat exchange between the crucible and the surrounding furnace, formation of the growth interface and the melt/encapsulant interface meniscus, release of the latent heat during the phase transition. The time history of the growth is reconstructed from a sequence of steady state calculations with decreasing melt depth. The numerical method is based on explicit interface tracking. The employed comp

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Golubovic, Aleksandar, Slobodanka Nikolic, Rados Gajic, Stevan Djuric, and Andreja Valcic. "The growth of Nd:CaWO4 single crystals." Journal of the Serbian Chemical Society 68, no. 12 (2003): 1001–9. http://dx.doi.org/10.2298/jsc0312001g.

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CaWO4 doped with 0.8 % at. Nd (Nd:CaWO4) single crystals were grown from the melt in air by the Czochralski technique. The critical diameter dc = 1.0 cm and the critical rate of rotation ?c = 30 rpm were calculated from hydrodynamic equations for buoyancy-driven and forced convection. The rate of crystal growth was experimentally obtained to be 6.7 mm/h. For chemical polishing, a solution of 1 part saturated chromic acid (CrO3 in water) and 3 parts conc. H3PO4 (85 %) at 433 K with an exposure time of 2 h was found to be adequate. A mixture of 1 part concentrated HF and 2 parts chromic acid at

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HIRASAWA, Shigeki, Masato IKEGAWA, Akihiro GUNJI, Hiroyuki ISHIBASHI, and Tetsuo MUNAKATA. "Analysis of Temperature Distribution in Oxide-Crystal during Czochralski Single-Crystal Growth." Transactions of the Japan Society of Mechanical Engineers Series B 69, no. 683 (2003): 1679–84. http://dx.doi.org/10.1299/kikaib.69.1679.

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Yao, Shuhua, Xiaobo Hu, Tao Yan, et al. "Twinning structures in near-stoichiometric lithium niobate single crystals." Journal of Applied Crystallography 43, no. 2 (2010): 276–79. http://dx.doi.org/10.1107/s0021889809055459.

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A near-stoichiometric lithium niobate single crystal has been grown by the Czochralski method in a hanging double crucible with a continuous powder supply system. Twins were found at one of the three characteristic growth ridges of the as-grown crystal. The twin structure was observed and analyzed by transmission synchrotron topography. The image shifts ΔXand ΔYin the transmission synchrotron topograph were calculated for the 3{\overline 2}{\overline 1}2 and 0\overline 222 reflections based on results from high-resolution X-ray diffractometry. It is confirmed that one of the {01{\overline 1}{\

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Sanjarovskii, N. A., I. B. Parfenteva, T. G. Yugova, and S. N. Knyazev. "Defect structure of tin-doped inas single crystals grown by the Czochralski method." Kristallografiâ 69, no. 3 (2024): 400–404. http://dx.doi.org/10.31857/s0023476124030041.

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Indium arsenide (InAs) single crystals heavily doped with Sn are found to have various violations of structural perfection, which depend on the Sn concentration in different regions of crystal. At low charge-carrier (electron) concentrations (~1.5 × 1018 cm–3) an unusual annular distribution of dislocations in the cross section is observed for the initial parts of crystal. The dislocation density lies in the range of (0.1–1.0) × 104 cm–2. At a carrier concentration above 4.0 × 1018 cm–3 indium inclusions and “vicinal growth hillocks” are observed in the final parts of crystals. The dislocation

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Kusuma, Hamdan Hadi, Zuhairi Ibrahim, and Zulkafli Othaman. "Estimation of Crystallite Size, Density, and Compositional of the Ti: Al2O3 Single Crystal." Jurnal Ilmiah Pendidikan Fisika Al-Biruni 9, no. 2 (2020): 295–302. http://dx.doi.org/10.24042/jipfalbiruni.v9i2.7207.

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The purposes of this research were to estimate the crystallite size, density, and chemical composition of the ingot Ti: Al2O3 crystal grown by the Czochralski method. The crystallite size and composition of Ti: Al2O3 crystals had been determined using x-ray diffraction (XRD) and energy-dispersive x-ray spectroscopy (EDXS). Based on the Archimedes principle, the density of the crystals had been determined. The XRD patterns showed a single central peak with high intensity for all samples. It indicated that all samples had a single crystal. The average value of the samples' crystallite size was i

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ITO, MOTOO, and MASANA MORIOKA. "Growth of diopside (CaMgSi2O6) single crystal by the Czochralski technique." GEOCHEMICAL JOURNAL 40, no. 6 (2006): 625–29. http://dx.doi.org/10.2343/geochemj.40.625.

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MIYAZAKI, Noriyuki, Hitoshi UCHIDA, Tsuyoshi MUNAKATA, Kazumasa FUJIOKA, and Yuji SUGINO. "Thermal Stress Analysis of Silicon Single Crystal during Czochralski Growth." Transactions of the Japan Society of Mechanical Engineers Series A 58, no. 554 (1992): 1953–59. http://dx.doi.org/10.1299/kikaia.58.1953.

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Hua, Jiang, H. J. Kim, Gul Rooh, H. Park, Sunghwan Kim, and JongKyu Cheon. "Czochralski growth and scintillation properties of Bi4Si3O12 (BSO) single crystal." Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment 648, no. 1 (2011): 73–76. http://dx.doi.org/10.1016/j.nima.2011.05.043.

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