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Journal articles on the topic 'Czochralski'

Author: Grafiati

Published: 4 June 2021

Last updated: 25 May 2024

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1

Tomaszewski, Paweł E. "Uwagi do komentarza Prof. Michała Kokowskiego o badaniach życiorysu Jana Czochralskiego." Studia Historiae Scientiarum 15 (November 24, 2016): 395–404. http://dx.doi.org/10.4467/23921749shs.16.018.6161.

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This is a subsequent (third) part of the polemic on the facts from the life of Jan Czochralski and the difference in the presentation of these facts by amateur and professional historians. The main source of controversy is Jan Czochralski’s voluminous biography entitled Powrót. Rzecz o Janie Czochralskim(2012), English edition: Jan Czochralski restored (2013).

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2

Kokowski, Michał. "Odpowiedź na list Dr. Pawła E. Tomaszewskiego na temat badań życiorysu Jana Czochralskiego." Studia Historiae Scientiarum 15 (November 24, 2016): 405–8. http://dx.doi.org/10.4467/23921749shs.16.019.6162.

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The author replies to the letter of Dr. Paweł E. Tomaszewski, which is a subsequent (third) stage of the controversy regarding the facts of life of Jan Czochralski and the differences in the way they are presented by an amateur researcher and a professional historian. The source of the controversy is the biography Powrót. Rzecz o Janie Czochralskim (2012), the English edition: Jan Czochralski restored (2013). In the opinion of the author, a professional historian of science may have some reservations regarding the sometimes too popular a style of the publications of Dr. Tomaszewski. Nevertheless, there is no doubt that so far this amateur [i.e. enthusiast] of historical research has done much more regarding the biography and achievements of Jan Czochralski than professional historians and historians of science. This reply concludes the exchange of polemics.

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3

Yankovych, Oleksandra, and Vladyslav Verbets. "The Figure of Jan Czochralski as an Example of a Scientist, Teacher and Patriot for the Youth of Today to Imitate (1885 – 1953)." Professional Education: Methodology, Theory and Technologies, no. 18 (December 20, 2023): 274–89. http://dx.doi.org/10.31470/2415-3729-2023-18-274-289.

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The article analyses the life path and activities of the world-recognized Polish scientist, inventor, metallurgist, patron and philanthropist, writer, professor of the Warsaw Polytechnic Jan Czochralski (1885 - 1953). He is considered one of the four most famous and most cited Polish scientists who influenced the development of civilization. In terms of the greatness and significance of his scientific achievements, he is placed in the same row as the world-famous Poles M. Copernicus, M. Skłodowska-Curie, I. Łukasiewicz, who not only glorified Poland, but also changed the world. The purpose of the article is to study and analyze the main milestones of J. Czochralski's creative activity and the role of his scientific achievements. Research methods. Theoretical methods were used as synthesis analysis, systematization, comparison, classification, generalization. The results. The life path, the main stages of Jan Czochralski's activity against the background of historical events of the end of the 19th and the first half of the 20th centuries are revealed. The trials that the scientist underwent, unjust accusations of helping the Third Reich, and the reasons for his persecution are shown (he was fully rehabilitated only in 2011). Patriotism, hard work, perseverance, humanism, which contributed to successful teaching activities are emphasized as the personal qualities of Jan Czochralski. The most important achievements of the outstanding Polish scientist are analysed: the method of growing silicon single crystals, which are used in modern electronic and digital technology, in solar energy, and in jewellery; the discovery of alloys for railway bearings (known as B-metal); the invention of the radio microscope as the predecessor of the modern atomic force microscope, the enrichment of research tools. Jan Czochralski is a scientist, inventor, metallurgist, and philanthropist. He started processes that we now interpret as technology transfer. He is an author of poetry collections and manuals, a university professor who created a new image of a teacher, an entrepreneur and a person who believed in family values. He was a comprehensively developed personality who combined intellectual achievements and aesthetics, spiritual and moral qualities and hard work. Conclusions. The expediency of wider popularization of the figure of J. Czochralski in modern educational institutions as a comprehensively developed personality, as a model for younger generations to follow is shown.

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4

Tomaszewski, Paweł E. "Jan Czochralski—father of the Czochralski method." Journal of Crystal Growth 236, no. 1-3 (March 2002): 1–4. http://dx.doi.org/10.1016/s0022-0248(01)02195-9.

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5

Blizzard, John R. "Professor Jan Czochralski and the Czochralski award." physica status solidi (b) 248, no. 7 (May 10, 2011): 1559–62. http://dx.doi.org/10.1002/pssb.201140119.

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6

Tomaszewski, Paweł E. "Od wazeliny do krzemowej rewolucji: czyli niezwykła historia największego polskiego odkrycia, które zmieniło świat." Studia Historiae Scientiarum 16 (December 18, 2017): 155–200. http://dx.doi.org/10.4467/2543702xshs.17.008.7709.

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In August 2016 exactly one hundred years passed from the discovery of the Czochralski method of single crystal pulling, named after Jan Czochralski (1885–1953), the Polish chemist and metallurgist. To celebrate this anniversary, a translation of Czochralski main publication into Polish was published. In the present paper we show the pharmaceutical inspiration which was most likely a source of the discovery of the Czochralski method. We present the evolution of this method up to obtaining huge single crystals of silicon, the fundamental element of contemporary electronics and our civilization.

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7

Sun, Chenguang, Zhongshi Lou, Xingtian Ai, Zixuan Xue, Hui Zhang, and Guifeng Chen. "Effects of Nitrogen Doping on Pulling Rate Range of Defect-Free Crystal in CZ Silicon." Coatings 13, no. 9 (September 18, 2023): 1637. http://dx.doi.org/10.3390/coatings13091637.

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We investigated the effect of nitrogen doping on the pulling rate range of defect-free crystal in silicon with a diameter of 200 mm. It was found that the pulling rate range of defect-free crystal in nitrogen-doped Czochralski silicon is wider and the pulling rate (defect free) is lower than it is in non-nitrogen-doped Czochralski silicon. Under the experiment, the pull rate was from 0.67 mm/min~0.58 mm/min to 0.65 mm/min~0.54 mm/min. To further confirm the above experimental analysis, a numerical simulation process of nitrogen-doped Czochralski and non-nitrogen-doped Czochralski in an industrial system was performed. The V/G value along the S/L interface was the same for both models, but the distribution of Cvi (concentration of vacancy–concentration of self-interstitial) for nitrogen-doped Czochralski crystal silicon was more uniform and flat in a nitrogen-doped single crystal. Furthermore, the nitrogen-doped Czochralski crystal silicon had a smaller void size and a higher oxygen precipitation density. The experimental results are in good agreement with the numerical simulation results.

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8

Gurdziel, Wojciech, Zygmunt Wokulski, Grzegorz Dercz, and Jacek Krawczyk. "Crystallization and Microstructure of Co_0.75Ni_0.25Si₂ Solid Solution." Solid State Phenomena 186 (March 2012): 86–89. http://dx.doi.org/10.4028/www.scientific.net/ssp.186.86.

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The microstructure of Co0.75Ni0.25Si2solid solution, obtained by two different techniques was studied. The solidification processes were conducted using Bridgman and Czochralski methods. The processes were conducted under atmospheric pressure and in the helium atmosphere. Various pulling down (Bridgman method) and pulling up (Czochralski method) rates were applied for ingots and boules preparation. The obtained Co0.75Ni0.25Si2ingots and boules were subjected to the metallographic observations and chemical microanalysis, mainly used Scanning Electron Microscopy techniques. They were studied using X-ray phase analysis too. Comparing the investigation results it was found that the ingots obtained by the Bridgman method and boules obtained by the Czochralski method were single crystalline. The boules, obtained using the Czochralski method, possess better structural quality than ingots obtained by the Bridgman method.

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9

Britten, J. F., H. A. Dabkowska, A. B. Dabkowski, J. E. Greedan, J. L. Campbell, and W. J. Teesdale. "Czochralski-Grown SrLaGaO4." Acta Crystallographica Section C Crystal Structure Communications 51, no. 10 (October 15, 1995): 1975–77. http://dx.doi.org/10.1107/s0108270194011820.

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10

Derby, J. J., and R. A. Brown. "Thermal-capillary analysis of Czochralski and liquid encapsulated Czochralski crystal growth." Journal of Crystal Growth 75, no. 2 (May 1986): 227–40. http://dx.doi.org/10.1016/0022-0248(86)90032-1.

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11

Derby, J. J., and R. A. Brown. "Thermal-capillary analysis of Czochralski and liquid encapsulated Czochralski crystal growth." Journal of Crystal Growth 74, no. 3 (April 1986): 605–24. http://dx.doi.org/10.1016/0022-0248(86)90208-3.

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12

Müller, G. "The Czochralski Method - where we are 90 years after Jan Czochralski’s invention." Crystal Research and Technology 42, no. 12 (December 2007): 1150–61. http://dx.doi.org/10.1002/crat.200711001.

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13

Yang, De Ren, and Jiahe Chen. "Germanium in Czochralski Silicon." Defect and Diffusion Forum 242-244 (September 2005): 169–84. http://dx.doi.org/10.4028/www.scientific.net/ddf.242-244.169.

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The behaviors of isovalent impurities doped in Czochralski (CZ) silicon crystal have attracted considerable attention in recent years. In this article, a review concerning recent processes in the study about germanium in CZ silicon is presented. The disturbance of silicon crystal lattice in and the influence on the mechanical strength due to germanium doping is described. Oxygen related donors, oxygen precipitation and voids defects in germanium doped Czochralski (GCZ) silicon has been demonstrated in detail. In addition, the denuded zone formation and the internal gettering technology of GCZ silicon is also discussed.

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14

Miller, Wolfram, Nikolay Abrosimov, Jörg Fischer, Alexander Gybin, Uta Juda, Stefan Kayser, and Jószef Janicskó-Csáthy. "Quasi-Transient Calculation of Czochralski Growth of Ge Crystals Using the Software Elmer." Crystals 10, no. 1 (December 31, 2019): 18. http://dx.doi.org/10.3390/cryst10010018.

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A numerical scheme was developed to compute the thermal and stress fields of the Czochralski process in a quasi-time dependent mode. The growth velocity was computed from the geometrical changes in melt and crystal due to pulling for every stage, for which the thermal and stress fields were computed by using the open source software Elmer. The method was applied to the Czochralski growth of Ge crystals by inductive heating. From a series of growth experiments, we chose one as a reference to check the validity of the scheme with respect to this Czochralski process. A good agreement both for the shapes of the melt/crystal interface at various time steps and the change in power consumption with process time was observed.

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15

Bates, Alison G. "Czochralski silicon radiation detectors." Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment 569, no. 1 (December 2006): 73–76. http://dx.doi.org/10.1016/j.nima.2006.09.016.

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16

Tomm, Y., P. Reiche, D. Klimm, and T. Fukuda. "Czochralski grown Ga2O3 crystals." Journal of Crystal Growth 220, no. 4 (December 2000): 510–14. http://dx.doi.org/10.1016/s0022-0248(00)00851-4.

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17

Brandle, C. D. "Czochralski growth of oxides." Journal of Crystal Growth 264, no. 4 (March 2004): 593–604. http://dx.doi.org/10.1016/j.jcrysgro.2003.12.044.

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18

Phuc, Le Tran Huu, HyeJun Jeon, Nguyen Tam Nguyen Truong, and Jung Jae Hak. "Improving the Dipping Step in Czochraski Process Using Haar-Cascade Algorithm." Electronics 8, no. 6 (June 8, 2019): 646. http://dx.doi.org/10.3390/electronics8060646.

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Czochralski crystal growth has become a popular technique to produce pure single crystals. Many methods have also been developed to optimize this process. In this study, a charge-coupled device camera was used to record the crystal growth progress from beginning to end. The device outputs images which were then used to create a classifier using the Haar-cascade and AdaBoost algorithms. After the classifier was generated, artificial intelligence (AI) was used to recognize the images obtained from good dipping and calculate the duration of this operating. This optimization approach improved a Czochralski which can detect a good dipping step automatically and measure the duration with high accuracy. Using this development, the labor cost of the Czochralski system can be reduced by changing the contribution of human specialists’ mission.

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19

Li, Jingwei, Juncheng Li, Yinhe Lin, Jian Shi, Boyuan Ban, Guicheng Liu, Woochul Yang, and Jian Chen. "Separation and Recovery of Refined Si from Al–Si Melt by Modified Czochralski Method." Materials 13, no. 4 (February 23, 2020): 996. http://dx.doi.org/10.3390/ma13040996.

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Separation of refined silicon from Al–Si melt is still a puzzle for the solvent refining process, resulting in considerable waste of acid and silicon powder. A novel modified Czochralski method within the Al–Si alloy is proposed. After the modified Czochralski process, a large amount of refined Si particles was enriched around the seed crystalline Si and separated from the Al–Si melt. As for the Al–28%Si with the pulling rate of 0.001 mm/min, the recovery of refined Si in the pulled-up alloy (PUA) sample is 21.5%, an improvement of 22% compared with the theoretical value, which is much larger 1.99 times than that in the remained alloy (RA) sample. The content of impurities in the PUA is much less than that in the RA sample, which indicates that the modified Czochralski method is effective to improve the removal fraction of impurities. The apparent segregation coefficients of boron (B) and phosphorus (P) in the PUA and RA samples were evaluated. These results demonstrate that the modified Czochralski method for the alloy system is an effective way to enrich and separate refined silicon from the Al–Si melt, which provide a potential and clean production of solar grade silicon (SoG-Si) for the future industrial application.

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20

Verezub, N. A., L. V. Kozhitov, T. T. Kondratenko, A. I. Prostomolotov, and I. V. Silaev. "Technology and thermomechanics in growing tubular silicon single crystals." Izvestiya Vysshikh Uchebnykh Zavedenii. Materialy Elektronnoi Tekhniki = Materials of Electronics Engineering 25, no. 3 (September 28, 2022): 202–13. http://dx.doi.org/10.17073/1609-3577-2022-3-202-213.

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The problem of growing high-resistance low-dislocation tubular silicon single crystals for non-planar manufacturing technologies of epitaxial p-n junctions and the production of new-generation power semiconductor devices is considered. The possibilities of Stepanov method for growing volumetric profiled crystalline products, the application of which is based on the use of shapers of various designs, are discussed. In particular, the shortcomings of shapers associated with the melt contamination by foreign particles and impurities are discussed. Therefore, the main attention is paid to the use of equipment that implements crystal growth from a melt without a shaper by Czochralski method. The processes of thermal mechanics are preliminary analyzed in relation to the existing and well-established process of growing polycrystalline highly dislocation silicon pipes of large diameter by Czochralski method for epitaxial reactors.It is noted that the growth of tubular low-dislocation small diameter silicon single crystals requires a significant modernization of the standard hot zone, which in this work is implemented for “REDMET-10” Czochralski furnace. By means of computer simulation, thermal mechanical processes are calculated for such a modernized Czochralski furnace. The parameters of grown tubular silicon single crystals are characterized, and their manufacturing suitability for power semiconductor devices using nonplanar technology is assessed.

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21

Binetti, S., M. Acciarri, A. Brianza, C. Savigni, and S. Pizzini. "Effect of oxygen concentration on diffusion length in Czochralski and magnetic Czochralski silicon." Materials Science and Technology 11, no. 7 (July 1, 1995): 665–69. http://dx.doi.org/10.1179/026708395790165309.

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22

Binetti, S., M. Acciarri, A. Brianza, C. Savigni, and S. Pizzini. "Effect of oxygen concentration on diffusion length in Czochralski and magnetic Czochralski silicon." Materials Science and Technology 11, no. 7 (July 1995): 665–69. http://dx.doi.org/10.1080/17432847.1995.11945560.

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23

Franc, Jan. "Modelling of the Czochralski flow." Abstract and Applied Analysis 3, no. 1-2 (1998): 1–40. http://dx.doi.org/10.1155/s1085337598000426.

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The Czochralski method of the industrial production of a silicon single crystal consists of pulling up the single crystal from the silicon melt. The flow of the melt during the production is called the Czochralski flow. The mathematical description of the flow consists of a coupled system of six P.D.E. in cylindrical coordinates containing Navier-Stokes equations (with the stream function), heat convection-conduction equations, convection-diffusion equation for oxygen impurity and an equation describing magnetic field effect.This paper deals with the analysis of the system in the form used for numerical simulation. The weak formulation is derived and the existence of the weak solution to the stationary and the evolution problem is proved.

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24

Szostek, Krzysztof, Wojciech Gurdziel, and Zygmunt Wokulski. "Microstructure and Lattice Parameter Studies of Constituent Phases in CoSi₂-Si Eutectic Composite." Solid State Phenomena 163 (June 2010): 268–71. http://dx.doi.org/10.4028/www.scientific.net/ssp.163.268.

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The subject of the study was an examination of the lattice parameter variations of the constituent phases in CoSi2-Si eutectic composite according to the vertical axes of samples. A preparation of samples has been conducted using Bridgman and Czochralski techniques. The aim of the study was to establish an influence of applied preparation method on a stability of appropriate lattice parameters. It was shown that the constituent phases of the CoSi2-Si eutectic samples obtained via Czochralski technique are distinguished by a higher stability of the lattice parameter than samples obtained using Bridgman technique.

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25

Chen, Jia He, Xiang Yang Ma, and De Ren Yang. "Impurity Engineering of Czochralski Silicon." Solid State Phenomena 156-158 (October 2009): 261–67. http://dx.doi.org/10.4028/www.scientific.net/ssp.156-158.261.

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The novel concept of “impurity engineering in CZochralski (CZ) silicon ” for large scaled integrated circuits has been reviewed. By doping with a certain impurities into CZ silicon materials intentionally, such as nitrogen (N), germanium (Ge) and even carbon (C, with high concentration), internal gettering ability of CZ silicon wafers could be improved. Meanwhile, void defects in CZ silicon wafer could be easily eliminated during annealing at higher temperatures. Furthermore, it was also found that the mechanical strength could be increased, so that breakage of wafers decreased. Thus, it is believed that by impurity engineering CZ silicon wafers can satisfy the requirment of ultra large scale integrated circuits.

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26

Aubert, J. J., and J. J. Bacmann. "Czochralski growth of silicon bicrystals." Revue de Physique Appliquée 22, no. 7 (1987): 515–18. http://dx.doi.org/10.1051/rphysap:01987002207051500.

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27

Kurashige, Kazuhisa, Yoshitake Toda, Satoru Matstuishi, Katsuro Hayashi, Masahiro Hirano, and Hideo Hosono. "Czochralski Growth of 12CaO·7Al2O3Crystals." Crystal Growth & Design 6, no. 7 (July 2006): 1602–5. http://dx.doi.org/10.1021/cg0600290.

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28

Yu, Xuegong, Jiahe Chen, Xiangyang Ma, and Deren Yang. "Impurity engineering of Czochralski silicon." Materials Science and Engineering: R: Reports 74, no. 1-2 (January 2013): 1–33. http://dx.doi.org/10.1016/j.mser.2013.01.002.

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29

Sankaranarayanan, K., and P. Ramasamy. "Microtube-Czochralski technique (μT-CZ):." Journal of Crystal Growth 193, no. 1-2 (September 1998): 252–56. http://dx.doi.org/10.1016/s0022-0248(98)00464-3.

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30

Nawash, Jalal M., and Kelvin G. Lynn. "Czochralski crystal growth of Zn2Te3O8." Journal of Crystal Growth 310, no. 18 (August 2008): 4217–20. http://dx.doi.org/10.1016/j.jcrysgro.2008.06.058.

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31

Hurle, D. T. J., G. C. Joyce, M. Ghassempoory, A. B. Crowley, and E. J. Stern. "The dynamics of czochralski growth." Journal of Crystal Growth 100, no. 1-2 (February 1990): 11–25. http://dx.doi.org/10.1016/0022-0248(90)90603-i.

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32

Talik, E. "Ninetieth anniversary of Czochralski method." Journal of Alloys and Compounds 442, no. 1-2 (September 2007): 70–73. http://dx.doi.org/10.1016/j.jallcom.2006.07.134.

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33

Szabó, György. "Thermal strain during Czochralski growth." Journal of Crystal Growth 73, no. 1 (October 1985): 131–41. http://dx.doi.org/10.1016/0022-0248(85)90339-2.

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34

Mitchell, K. W. "Renaissance of Czochralski silicon photovoltaics." Progress in Photovoltaics: Research and Applications 2, no. 2 (April 1994): 115–20. http://dx.doi.org/10.1002/pip.4670020206.

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35

Jensen, Mathias Novik, and Olav Gaute Hellesø. "Measuring the end-face of silicon boules using mid-infrared laser scanning." CrystEngComm 23, no. 26 (2021): 4648–57. http://dx.doi.org/10.1039/d1ce00264c.

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36

Tang, Xia, Botao Liu, Yue Yu, Botao Song, Pengfei Han, Sheng Liu, and Bing Gao. "Effect of Internal Radiation on Process Parameters in the Global Simulation of Growing Large-Size Bulk β-Ga2O3 Single Crystals with the Czochralski Method." Crystals 11, no. 7 (June 29, 2021): 763. http://dx.doi.org/10.3390/cryst11070763.

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As a crystal grows, the temperature distribution of the crystal and melt will change. It is necessary to study the dynamic process of single-crystal growth. Due to the relatively low crystallization rates used in the industrial Czochralski growth system, a steady state is used to compute the temperature distribution and melt flow. A two-dimensional axisymmetric model of the whole Czochralski furnace was established. The dynamic growth process of large-size bulk β-Ga2O3 single crystal using the Czochralski method has been numerically analyzed with the parameter sweep method. In this paper, two cases of internal radiation and no internal radiation were compared to study the effect of radiation on the process parameters. The temperature distribution of the furnace, the temperature field, and the flow field of the melt was calculated. The temperature, the temperature gradient of the crystal, the temperature at the bottom of the crucible, and the heater power were studied for the crystals grown in the two cases of radiation. The results obtained in this study clearly show that the loss calculated by including the internal radiation is higher compared to that including the surface radiation.

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37

Satunkin, Gennadii. "Modelling the dynamics and control design for Czochralski, Liquid Encapsulated Czochralski and Floating Zone processes." Progress in Crystal Growth and Characterization of Materials 56, no. 1-2 (March 2010): 1–121. http://dx.doi.org/10.1016/j.pcrysgrow.2010.05.001.

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38

Wisniewski, Wolfgang, Marcus Nagel, and Christian Rüssel. "Macroscopic glass-permeated single-crystals of fresnoite." CrystEngComm 17, no. 27 (2015): 5019–25. http://dx.doi.org/10.1039/c5ce00856e.

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39

Hjellming, L. N., and J. S. Walker. "Melt motion in a Czochralski crystal puller with an axial magnetic field: isothermal motion." Journal of Fluid Mechanics 164 (March 1986): 237–73. http://dx.doi.org/10.1017/s0022112086002549.

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A magnetic field suppresses turbulence and thermal convection in a Czochralski crystal puller. The amounts and distributions of dopants and oxygen in the crystal are determined by the motion of the molten silicon during crystal growth. This paper presents analytical solutions for the melt motion in a Czochralski puller with a strong, uniform, axial magnetic field. The relatively small electrical conductivity of the crystal plays a key role in determining the flow. Certain combinations of crystal and crucible rotation rates lead to flow patterns with a large volume of almost stagnant fluid under most of the crystal face. The values of these rotation rates depend on the magnetic field strength.

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40

Dou, Renqin, Qingli Zhang, Dunlu Sun, Jianqiao Luo, Huajun Yang, Wenpeng Liu, and Guihua Sun. "Growth, thermal, and spectroscopic properties of a 2.911 μm Yb,Ho:GdYTaO4 laser crystal." CrystEngComm 16, no. 48 (2014): 11007–12. http://dx.doi.org/10.1039/c4ce01753f.

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41

Pan, Zhongben, Xiaojun Dai, Yuanhua Lei, Huaqiang Cai, Josep Maria Serres, Magdalena Aguiló, Francesc Díaz, et al. "Crystal growth and properties of the disordered crystal Yb:SrLaAlO4: a promising candidate for high-power ultrashort pulse lasers." CrystEngComm 20, no. 24 (2018): 3388–95. http://dx.doi.org/10.1039/c8ce00540k.

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42

Härkönen, Jaakko, Esa Tuovinen, Panja Luukka, Eija Tuominen, Zheng Li, Vladimir Eremin, and Elena Verbitskaya. "Radiation Hard Silicon for Medical, Space and High Energy Physics Applications." Materials Science Forum 614 (March 2009): 215–21. http://dx.doi.org/10.4028/www.scientific.net/msf.614.215.

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The objective of this paper is to give an overview on how silicon particle detector would survive operational in extremely harsh radiation environment after luminosity upgrade of the CERN LHC (Large Hadron Collider). The Super-LHC would result in an integrated fluence 1×1016 p/cm2 and that is well beyond the radiation tolerance of even the most advanced semiconductor detectors fabricated by commonly adopted technologies. The Czochralski silicon (Cz-Si) has intrinsically high oxygen concentration. Therefore Cz-Si is considered as a promising material for the tracking systems in future very high luminosity colliders. The fabrication process issues of Cz-Si are discussed and the formation of thermal donors is especially emphasized. N+/p-/p+ and p+/n-/n+ detectors have been processed on magnetic Czochralski (MCz-Si) wafers. We show measurement data of AC-coupled strip detectors and single pad detectors as well as experimental results of intentional TD doping. Data of spatial homogeneity of electrical properties, full depletion voltage and leakage current, is shown and n and p-type devices are compared. Our results show that it is possible to manufacture high quality n+/p-/p+ and p+/n-/n+ particle detectors from high resistivity Czochralski silicon.

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Kumar, Sonu, and Binay Kumar. "Growth of an 8-hydroxyquinoline single crystal by a modified Czochralski growth technique, and crystal characterization." CrystEngComm 20, no. 5 (2018): 624–30. http://dx.doi.org/10.1039/c7ce01857f.

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Ding, Shoujun, Qingli Zhang, Wenpeng Liu, Jianqiao Luo, Fang Peng, Xiaofei Wang, Guihua Sun, and Dunlu Sun. "Crystal growth and characterization of a mixed laser crystal: Nd-doped Gd0.89La0.1NbO4." RSC Advances 7, no. 57 (2017): 35666–71. http://dx.doi.org/10.1039/c7ra05380k.

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Derby, Jeffrey J. "Theoretical Modeling of Czochralski Crystal Growth." MRS Bulletin 13, no. 10 (October 1988): 29–35. http://dx.doi.org/10.1557/s0883769400064162.

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The growth of single crystals with precisely controlled properties is one of the most demanding goals of modern materials processing, and its realization depends on the application of fundamentals from solid-state physics, chemistry, thermodynamics, and transport phenomena. Bulk semiconductor substrates and many high-power solid-state laser host materials are typically produced by solidification from the melt. The quality of the crystals produced this way hinges on process conditions which are predominantly determined by the transport of heat, mass, and momentum in the melt and crystal. Accurate modeling of melt crystal growth promises to enhance our understanding of existing systems and improve the design and control of future processes, thereby accelerating the development of advanced materials and devices.Theoretical modeling is often the only way to probe the complex interactions which characterize melt crystal growth, especially the effects of process changes on internal features of growth that cannot be directly measured on-line, such as the shape of the melt/crystal interface or temperature gradients within the growing crystal. In this way, computer simulation can serve as a design tool for developing control strategies and process innovations. Further, modeling serves as a test-bed for theoretical experiments which extend our knowledge of how fundamental physical phenomena govern the process.This report attempts to provide a glimpse of how analysis and modeling have impacted the understanding of Czochralski (CZ) crystal growth. The reader is referred to several excellent reviews for more in-depth information regarding melt crystal growth modeling.

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Łukasiewicz, T., and A. Majchrowski. "Czochralski growth of Li2B4O7 single crystals." Acta Physica Hungarica 70, no. 3 (August 1991): 189–90. http://dx.doi.org/10.1007/bf03156264.

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Miyano, Takaya, Akira Shintani, Tadashi Kanda, and Masataka Hourai. "Interface fluctuations in Czochralski crystal growth." Journal of Applied Physics 78, no. 5 (September 1995): 2985–95. http://dx.doi.org/10.1063/1.360047.

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Selim, F. A. "Magnetic Czochralski Silicon for Power Devices." ECS Proceedings Volumes 1987-13, no. 1 (January 1987): 343–52. http://dx.doi.org/10.1149/198713.0343pv.

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Zazoui, M., M. A. Zaidi, J. C. Bourgoin, and G. Strobl. "Recombination centers in Czochralski‐grownp‐Si." Journal of Applied Physics 74, no. 6 (September 15, 1993): 3944–47. http://dx.doi.org/10.1063/1.354461.

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Bottaro, Alessandro, and Abdelfattah Zebib. "Bifurcation in axisymmetric Czochralski natural convection." Physics of Fluids 31, no. 3 (1988): 495. http://dx.doi.org/10.1063/1.866830.

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