Academic literature on the topic 'Deep isotropic etching'

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Journal articles on the topic "Deep isotropic etching"

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Nie, Lei, Jun Xing Yu, and Kun Zhang. "Multilayer Masking Technique for Deep Isotropic Silicon Wet Etching." Applied Mechanics and Materials 229-231 (November 2012): 2444–47. http://dx.doi.org/10.4028/www.scientific.net/amm.229-231.2444.

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A multilayer masking technique was presented aiming at the requirements of deep isotropic silicon wet etching. Because the processing time of deep etching is relatively long and etching rate is high, it is very hard to achieve satisfying etching result by using conventional photoresist or metal single layer mask. Thus multilayer mask consisting of photoresist and metal layers is fabricated to exert respective advantages and avoid disadvantages. Based on its excellent chemical and thermal stabilities and high viscosity, Su-8 was selected as the material of photoresist layer. The metal layer was
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Rahim, Rosminazuin A., Badariah Bais, and Majlis Burhanuddin Yeop. "Double-Step Plasma Etching for SiO2 Microcantilever Release." Advanced Materials Research 254 (May 2011): 140–43. http://dx.doi.org/10.4028/www.scientific.net/amr.254.140.

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In this paper, an isotropic dry plasma etching was used to release the suspended SiO2 microcantilever from the substrate of SOI wafer. Employing the plasma dry etching technique, the frontside etching for the SiO2 microcantilever release is done using the Oxford Plasmalab System 100. To obtain the optimum condition for the microcantilever release using the plasma etcher, the etching parameters involved are 100 sccm of SF6 flow, 2000 W of capacitively coupled plasma (CCP) power, 3 W of inductively coupled plasma (ICP) power, 20°C of etching temperature and 30 mTorr chamber pressure. The optimum
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Tillocher, Thomas, Jack Nos, Gaëlle Antoun, Philippe Lefaucheux, Mohamed Boufnichel, and Rémi Dussart. "Comparison between Bosch and STiGer Processes for Deep Silicon Etching." Micromachines 12, no. 10 (2021): 1143. http://dx.doi.org/10.3390/mi12101143.

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The cryogenic process is well known to etch high aspect ratio features in silicon with smooth sidewalls. A time-multiplexed cryogenic process, called STiGer, was developed in 2006 and patented. Like the Bosch process, it consists in repeating cycles composed of an isotropic etching step followed by a passivation step. If the etching step is similar for both processes, the passivation step is a SiF4/O2 plasma that efficiently deposits a SiOxFy layer on the sidewalls only if the substrate is cooled at cryogenic temperature. In this paper, it is shown that the STiGer process can achieve profiles
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TAN, KWONG-LUCK, CIPRIAN ILIESCU, FRANCIS TAY, HUI-TONG CHUA, and JIANMIN MIAO. "NANOTIPS COLD-END CONTACT FOR MICROCOOLING SYSTEMS." International Journal of Nanoscience 04, no. 04 (2005): 701–7. http://dx.doi.org/10.1142/s0219581x05003723.

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The paper presents the fabrication of nanotips cold-end contact for microcooling system. The fabrication process is based on an optimized isotropic plasma etching in SF 6/ O 2 using an ICP-deep RIE system from STS. We managed to fabricate the radius of the nanotips which are below 50 nm.
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Jones, Calvin Mitchell, Mustafa Mert Torunbalci, and Sunil Ashok Bhave. "Deep isotropic chemical etching (DICE) process for fabricating highly symmetric hemispherical silicon molds." Journal of Micromechanics and Microengineering 31, no. 7 (2021): 075005. http://dx.doi.org/10.1088/1361-6439/ac0323.

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Bauhuber, Michael, Andreas Mikrievskij, and Alfred Lechner. "Isotropic wet chemical etching of deep channels with optical surface quality in silicon with HNA based etching solutions." Materials Science in Semiconductor Processing 16, no. 6 (2013): 1428–33. http://dx.doi.org/10.1016/j.mssp.2013.05.017.

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Bui, Tung Thanh, and Chien Mau Dang. "Reduction of isotropic etch for silicon nanowires created by metal assisted deep reactive ion etching." International Journal of Nanotechnology 15, no. 1/2/3 (2018): 93. http://dx.doi.org/10.1504/ijnt.2018.089562.

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Zhan, Zhan, Ling Ke Yu, Cheng Zheng, Jian Fa Cai, Dao Heng Sun, and Ling Yun Wang. "Strategies for Defect-Free and Deep Wet Etching of Pyrex 7740." Key Engineering Materials 645-646 (May 2015): 21–25. http://dx.doi.org/10.4028/www.scientific.net/kem.645-646.21.

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In this paper, two aspects in the wet glass etching, the pre-annealing of the glass and the mask process, are taken into consideration to achieve the deep and defect-free wet etching of Pyrex glass. Compared with the conventional strategies, i.e.,HFsolution component and mask kinds, our experiment results prove the pre-annealing is another key role to obtain theoretical isotropy character in wet etching. Besides, the high temperature pre-annealing dramatically improves the structure profiles and reduces the notching defects. Additionally, a novel multilayer mask process is proposed. With 1.5μm
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Held, Jochen, Joao Gaspar, Patrick Ruther, et al. "Systematic Characterization of DRIE-Based Fabrication Process of Silicon Microneedles." MRS Proceedings 1052 (2007). http://dx.doi.org/10.1557/proc-1052-dd07-07.

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AbstractThis paper reports on the systematic characterization of a deep reactive ion etching based process for the fabrication of silicon microneedles. The possibility of using such microneedles as protruding microelectrodes enabling to electroporate adherently growing cells and to record intracellular potentials motivated the systematic analysis of the influence of etching parameters on the needle shape. The microneedles are fabricated using dry etching of silicon performed in three steps. A first isotropic step defines the tip of the needle. Next, an anisotropic etch increases the height of
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Chen, Kuo-Shen, Arturo A. Ayon, and S. Mark Spearing. "Silicon Strength Testing for Mesoscale Structural Applications." MRS Proceedings 518 (1998). http://dx.doi.org/10.1557/proc-518-123.

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AbstractThe development of power MEMS, such as the Microengine being developed at MIT, requires highly stressed structures to achieve high power densities. Material strength is, therefore, a critical issue for the design of such devices. Due to the stochastic nature of the strength of brittle materials, the length scales of the test specimens should be close to those of the structure in order to avoid excessive extrapolation of the test data. In this paper, strength characterization and supporting analysis of mesoscale biaxial flexure and radiused hub flexure single crystal silicon specimens a
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Dissertations / Theses on the topic "Deep isotropic etching"

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Yildirim, Alper. "Development Of A Micro-fabrication Process Simulator For Micro-electro-mechanical-systems(mems)." Master's thesis, METU, 2005. http://etd.lib.metu.edu.tr/upload/12606850/index.pdf.

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ABSTRACT DEVELOPMENT OF A MICRO-FABRICATION PROCESS SIMULATOR FOR MICRO-ELECTRO-MECHANICAL SYSTEMS (MEMS) Yildirim, Alper M.S, Department of Mechanical Engineering Supervisor: Asst. Prof. Dr. Melik D&ouml<br>len December 2005, 140 pages The aim of this study is to devise a computer simulation tool, which will speed-up the design of Micro-Electro-Mechanical Systems by providing the results of the micro-fabrication processes in advance. Anisotropic etching along with isotropic etching of silicon wafers are to be simulated in this environment. Similarly, additive processes like do
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(9524552), Calvin Mitchell Jones. "Analysis of Pop-Up Rings for the Fabrication of Giant MEMS Hemispheric Shell Resonators." Thesis, 2020.

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Fabrication of hemispherical structures for application in hemispherical resonator gyro-scopes (HRG) is an integral part of modern sensing systems, especially in relation to space navigation. First, it is important for these structures to be as symmetric as possible in order to accurately track both in-plane and out-of-plane acceleration that occurs in fast moving satellites and space crafts. Next, they need to be larger for easier application in current mm scale systems and to maintain a lower noise floor and high quality factor. The work in this paper introduces a methodology for the analyza
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Conference papers on the topic "Deep isotropic etching"

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Schwesinger, Norbert, and Arne Albrecht. "Wet chemical isotropic etching procedures of silicon: a possibility for the production of deep-structured microcomponents." In Micromachining and Microfabrication, edited by Shih-Chia Chang and Stella W. Pang. SPIE, 1997. http://dx.doi.org/10.1117/12.284467.

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