Relevant bibliographies by topics / Deep level transient spectroscopy

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  1. Journal articles
  2. Dissertations / Theses
  3. Books
  4. Book chapters
  5. Conference papers
  6. Reports

Academic literature on the topic 'Deep level transient spectroscopy'

Author: Grafiati
Published: 4 June 2021
Last updated: 6 September 2023

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Journal articles on the topic "Deep level transient spectroscopy"

1

Okumura, Tsugunori. "DLTS: Deep Level Transient Spectroscopy." HYBRIDS 7, no. 5 (1991): 29–36. http://dx.doi.org/10.5104/jiep1985.7.5_29.

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Garcia-Perez, F., F. J. Sanchez, and F. Sandoval. "Deep Level Transient Spectroscopy System." IFAC Proceedings Volumes 22, no. 18 (1989): 285–90. http://dx.doi.org/10.1016/s1474-6670(17)52855-4.

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Fourches, N. "Deep level transient spectroscopy based on conductance transients." Applied Physics Letters 58, no. 4 (1991): 364–66. http://dx.doi.org/10.1063/1.104635.

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Kamyczek, Paulina, Ewa Placzek-Popko, Eunika Zielony, and Zbigniew Zytkiewicz. "Deep levels in GaN studied by deep level transient spectroscopy and Laplace transform deep-level spectroscopy." Materials Science-Poland 31, no. 4 (2013): 572–76. http://dx.doi.org/10.2478/s13536-013-0138-0.

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Henry, P. M., J. M. Meese, J. W. Farmer, and C. D. Lamp. "Frequency‐scanned deep‐level transient spectroscopy." Journal of Applied Physics 57, no. 2 (1985): 628–30. http://dx.doi.org/10.1063/1.334753.

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Laird, J. S., R. A. Bardos, C. Jagadish, D. N. Jamieson, and G. J. F. Legge. "Scanning ion deep level transient spectroscopy." Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 158, no. 1-4 (1999): 464–69. http://dx.doi.org/10.1016/s0168-583x(99)00329-8.

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Manion, S. J., G. Costrini, M. A. Emanuel, J. J. Coleman, and K. Hess. "Hot electron deep level transient spectroscopy." Superlattices and Microstructures 1, no. 6 (1985): 481–83. http://dx.doi.org/10.1016/s0749-6036(85)80018-5.

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Su, Z., and J. W. Farmer. "Single scan deep‐level transient spectroscopy." Journal of Applied Physics 68, no. 8 (1990): 4068–70. http://dx.doi.org/10.1063/1.346244.

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Breitenstein, O., and J. Heydenreich. "Scanning deep level transient spectroscopy (SDLTS)." Scanning 7, no. 6 (1985): 273–89. http://dx.doi.org/10.1002/sca.4950070602.

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Scheffler, L., Vl Kolkovsky, and J. Weber. "Isolated Ti in Si: Deep level transient spectroscopy, minority carrier transient spectroscopy, and high-resolution Laplace deep level transient spectroscopy studies." Journal of Applied Physics 117, no. 4 (2015): 045713. http://dx.doi.org/10.1063/1.4906855.

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Dissertations / Theses on the topic "Deep level transient spectroscopy"

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Mehta, Hemant. "Computer controlled deep level transient spectroscopy system." Thesis, Kansas State University, 1986. http://hdl.handle.net/2097/9936.

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Arbaoui, Amar. "Deep level transient spectroscopy of III-IV semiconductors." Thesis, University of Nottingham, 1989. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.352952.

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Cholan, Hemavathy. "Deep level transient spectroscopy of magnesium doped indium phosphide /." Full text open access at:, 1987. http://content.ohsu.edu/u?/etd,154.

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Ahmed, Mahfuza. "Deep level transient spectroscopy studies of various silicon substrates." Thesis, Brunel University, 1998. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.246149.

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Zhang, Jingdong. "The development of positron deep level transient spectroscopy using variable energy positron beam and conventional deep level transient spectroscopy using digital capacitance meter /." Hong Kong : University of Hong Kong, 2002. http://sunzi.lib.hku.hk/hkuto/record.jsp?B25155076.

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Perjeru, Florentine. "Deep Defects in Wide Bandgap Materials Investigated Using Deep Level Transient Spectroscopy." Ohio University / OhioLINK, 2001. http://rave.ohiolink.edu/etdc/view?acc_num=ohiou997365452.

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Iaconianni, Sara. "Caratterizzazione di dispositivi a giunzione tramite Deep Level Transient Spectroscopy (DLTS)." Master's thesis, Alma Mater Studiorum - Università di Bologna, 2017. http://amslaurea.unibo.it/14216/.

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Abstract:
I semiconduttori in equilibrio termodinamico sono caratterizzati dalla presenza di stati difettivi, che perturbano la periodicità del reticolo cristallino e di conseguenza alterano la struttura a bande del materiale, introducendo stati energetici disponibili nel gap di energie proibite. Tali stati si dividono in due categorie: shallow levels e deep levels. Gli shallow levels devono il loro nome al fatto che gli stati elettronici ad essi associati hanno energie dell'ordine del meV, si collocano quindi vicino al bordo della banda di valenza o conduzione. I deep levels, al contrario, sono così ch
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Karbasi, Hossein. "Deep level transient spectroscopy of heteroepitaxial polycrystalline diamond and aluminum nitride /." free to MU campus, to others for purchase, 1998. http://wwwlib.umi.com/cr/mo/fullcit?p9901245.

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Chavva, Venkataramana Reddy. "Deep level transient spectroscopy studies of gallium arsenide and silicon carbide." Thesis, Hong Kong : University of Hong Kong, 1997. http://sunzi.lib.hku.hk/hkuto/record.jsp?B19739758.

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Tsia, Man Juliana. "Positron deep level transient spectroscopy in semi-insulating GaAs using the positron velocity transient method." Hong Kong : University of Hong Kong, 2000. http://sunzi.lib.hku.hk/hkuto/record.jsp?B22424775.

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Books on the topic "Deep level transient spectroscopy"

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Hu, S. Q. Adaptive control for capacitance deep level transient spectroscopy. UMIST, 1997.

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Mikla, Victor I. Trap level spectroscopy in amorphous semiconductors. Elsevier, 2010.

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Dąbrowska-Szata, Maria. Spektroskopia głębokich poziomów w strukturach półprzewodnikowych. Oficyna Wydawnicza Politechniki Wrocławskiej, 2000.

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Dąbrowska-Szata, Maria. Spektroskopia głębokich poziomów w strukturach półprzewodnikowych. Oficyna Wydawnicza Politechniki Wrocławskiej, 2000.

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5

Budiman, Roes Arief. Noncontact photothermal radiometric deep-level transient spectroscopy of semi-insulating GaAs. National Library of Canada, 1996.

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6

Scheinemann, Artur. Modelling of leakage currents induced by extended defects in extra-functionality devices. Hartung-Gorre Verlag, 2014.

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7

Deixler, Peter. Laplace deep level transient spectroscopy of gold and gold-hydrogen complexes in silicon. UMIST, 1997.

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8

Bruening, Joseph A. Analysis of radiation damaged and annealed gallium arsenide and indium phosphide solar cells using deep level transient spectroscopy. Naval Postgraduate School, 1993.

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9

Pinzon, Dimas. Analysis of radiation damaged and annealed gallium arsenide and indium phosphide solar cells using deep level transient spectroscopy techniques. Naval Postgraduate School, 1991.

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10

DeVries, Peter David. Innovations in deep level transient spectroscopy. 1988.

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Book chapters on the topic "Deep level transient spectroscopy"

1

Achtziger, N., and W. Witthuhn. "Radiotracer Deep Level Transient Spectroscopy." In Silicon Carbide. Springer Berlin Heidelberg, 2004. http://dx.doi.org/10.1007/978-3-642-18870-1_22.

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McLarty, Peter. "Deep Level Transient Spectroscopy (DLTS)." In The Kluwer International Series in Engineering and Computer Science. Springer US, 1995. http://dx.doi.org/10.1007/978-1-4613-1355-7_4.

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Rosencher, E. "Deep Level Transient Spectroscopy for Semiconductor Surface and Interface Analysis." In Springer Proceedings in Physics. Springer Berlin Heidelberg, 1987. http://dx.doi.org/10.1007/978-3-642-72967-6_21.

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Hamet, J. F., and G. Nouet. "Electronic Properties of Σ = 25 Silicon Bicrystals by Deep Level Transient Spectroscopy." In Springer Proceedings in Physics. Springer Berlin Heidelberg, 1989. http://dx.doi.org/10.1007/978-3-642-93413-1_8.

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Hallén, A., P. Håkansson, B. U. R. Sundqvist, and E. Tillberg. "Fast-Ion-Induced Defects in Silicon Studied by Deep Level Transient Spectroscopy." In Materials Modification by High-fluence Ion Beams. Springer Netherlands, 1989. http://dx.doi.org/10.1007/978-94-009-1267-0_16.

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Danno, Katsunori, and Tsunenobu Kimoto. "Deep Levels in Electron-Irradiated n- and p-type 4H-SiC Investigated by Deep Level Transient Spectroscopy." In Materials Science Forum. Trans Tech Publications Ltd., 2007. http://dx.doi.org/10.4028/0-87849-442-1.331.

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Danno, Katsunori, and Tsunenobu Kimoto. "Deep Hole Traps in As-Grown 4H-SiC Epilayers Investigated by Deep Level Transient Spectroscopy." In Silicon Carbide and Related Materials 2005. Trans Tech Publications Ltd., 2006. http://dx.doi.org/10.4028/0-87849-425-1.501.

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Mitromara, Niki, J. H. Evans-Freeman, and Ray Duffy. "Deep Level Transient Spectroscopy of Ultra Shallow Junctions in Si Formed by Implantation." In Solid State Phenomena. Trans Tech Publications Ltd., 2007. http://dx.doi.org/10.4028/3-908451-43-4.497.

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Alfieri, Giovanni, Ulrike Grossner, Edouard V. Monakhov, B. G. Svensson, John W. Steeds, and W. Sullivan. "Long Distance Point Defect Migration in Irradiated SiC Observed by Deep Level Transient Spectroscopy." In Silicon Carbide and Related Materials 2005. Trans Tech Publications Ltd., 2006. http://dx.doi.org/10.4028/0-87849-425-1.485.

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Xue, K., C. Renaud, P. Y. Chen, S. H. Yang, and T. P. Nguyen. "Defect Investigation in Perovskite Solar Cells by the Charge Based Deep Level Transient Spectroscopy (Q-DLTS)." In Advances in Engineering Research and Application. Springer International Publishing, 2018. http://dx.doi.org/10.1007/978-3-030-04792-4_28.

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Conference papers on the topic "Deep level transient spectroscopy"

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Rusli, Nazreen, and Didier Debuf. "A modular system of Deep Level Transient Spectroscopy." In 2011 IEEE International Conference on Computer Applications and Industrial Electronics (ICCAIE). IEEE, 2011. http://dx.doi.org/10.1109/iccaie.2011.6162137.

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Sporon-Fiedler, Frederik, and Eicke R. Weber. "Scanning Deep Level Transient Spectroscopy (DLTS) Of GaAs." In O-E/LASE'86 Symp (January 1986, Los Angeles), edited by Devindra K. Sadana and Michael I. Current. SPIE, 1986. http://dx.doi.org/10.1117/12.961195.

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Tokuda, Y., W. Nakamura, and K. Nakashima. "Deep-level transient spectroscopy using low-frequency capacitance measurements." In 2004 13th International Conference on Semiconducting and Insulating Materials. IEEE, 2004. http://dx.doi.org/10.1109/sim.2005.1511423.

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Kosíková, Jitka, Karel Žd'ánský, Alok Rudra, and Eli Kapon. "Quantum well heterostructures studied by deep-level transient spectroscopy." In SPIE Europe Optics + Optoelectronics, edited by Ivan Prochazka, Roman Sobolewski, and Miloslav Dusek. SPIE, 2009. http://dx.doi.org/10.1117/12.834242.

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Khatavkar, Sanchit, C. V. Kannan, Vijay Kumar, P. R. Nair, and B. M. Arora. "Deep level transient spectroscopy measurements of silicon heterojunction cells." In 2017 IEEE 44th Photovoltaic Specialists Conference (PVSC). IEEE, 2017. http://dx.doi.org/10.1109/pvsc.2017.8366429.

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Yamashita, Yudai, Kaoru Toko, and Takashi Suemasu. "Deep level transient spectroscopy characterization of BaSi2 light absorbers." In 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC) (A Joint Conference of 45th IEEE PVSC, 28th PVSEC & 34th EU PVSEC). IEEE, 2018. http://dx.doi.org/10.1109/pvsc.2018.8547854.

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Colon, Jose E., Samuel Lakeou, Jagmohan Bajaj, Jose M. Arias, Majid Zandian, and John G. Pasko. "Study of deep levels in MBE-grown HgCdTe photodiodes by deep level transient spectroscopy." In SPIE's International Symposium on Optical Engineering and Photonics in Aerospace Sensing, edited by Eustace L. Dereniak and Robert E. Sampson. SPIE, 1994. http://dx.doi.org/10.1117/12.179700.

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Johnson, N. M. "Deep - Level Transient Spectroscopy: From Characterization To Electronic Defect Identification." In 1985 Los Angeles Technical Symposium, edited by Fred H. Pollak and Raphael Tsu. SPIE, 1985. http://dx.doi.org/10.1117/12.946317.

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Colon, Jose E., Jagmohan Bajaj, Jose M. Arias, Majid Zandian, and John G. Pasko. "Point defects in HgCdTe by deep-level transient spectroscopy (DLTS)." In SPIE's 1994 International Symposium on Optics, Imaging, and Instrumentation, edited by Randolph E. Longshore. SPIE, 1994. http://dx.doi.org/10.1117/12.189247.

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Sobolev, M. M., V. N. Nevedomskii, R. V. Zolotareva, A. P. Vasil'ev, and V. M. Ustinov. "Deep-level transient spectroscopy of InAs/GaAs quantum dot superlattices." In INTERNATIONAL CONFERENCE ON DEFECTS IN SEMICONDUCTORS 2013: Proceedings of the 27th International Conference on Defects in Semiconductors, ICDS-2013. AIP Publishing LLC, 2014. http://dx.doi.org/10.1063/1.4865646.

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Reports on the topic "Deep level transient spectroscopy"

1

Look, David C. Deep Level Transient Spectroscopy Study of Defects and Impurities in GaN and Related III-N Materials. Defense Technical Information Center, 2003. http://dx.doi.org/10.21236/ada418082.

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Mitra, Souvick, Mulpuri V. Rao, N. Papanicolaou, K. A. Jones, and M. Derenge. Deep-Level Transient Spectroscopy Study on Double Implanted N(+)-p and p(+)-n 4H-SiC Diodes. Defense Technical Information Center, 2004. http://dx.doi.org/10.21236/ada424908.

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