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Dissertations / Theses on the topic 'Deep level transient spectroscopy'

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Published: 4 June 2021

Last updated: 6 September 2023

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1

Mehta, Hemant. "Computer controlled deep level transient spectroscopy system." Thesis, Kansas State University, 1986. http://hdl.handle.net/2097/9936.

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2

Arbaoui, Amar. "Deep level transient spectroscopy of III-IV semiconductors." Thesis, University of Nottingham, 1989. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.352952.

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3

Cholan, Hemavathy. "Deep level transient spectroscopy of magnesium doped indium phosphide /." Full text open access at:, 1987. http://content.ohsu.edu/u?/etd,154.

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4

Ahmed, Mahfuza. "Deep level transient spectroscopy studies of various silicon substrates." Thesis, Brunel University, 1998. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.246149.

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5

Zhang, Jingdong. "The development of positron deep level transient spectroscopy using variable energy positron beam and conventional deep level transient spectroscopy using digital capacitance meter /." Hong Kong : University of Hong Kong, 2002. http://sunzi.lib.hku.hk/hkuto/record.jsp?B25155076.

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6

Perjeru, Florentine. "Deep Defects in Wide Bandgap Materials Investigated Using Deep Level Transient Spectroscopy." Ohio University / OhioLINK, 2001. http://rave.ohiolink.edu/etdc/view?acc_num=ohiou997365452.

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7

Iaconianni, Sara. "Caratterizzazione di dispositivi a giunzione tramite Deep Level Transient Spectroscopy (DLTS)." Master's thesis, Alma Mater Studiorum - Università di Bologna, 2017. http://amslaurea.unibo.it/14216/.

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I semiconduttori in equilibrio termodinamico sono caratterizzati dalla presenza di stati difettivi, che perturbano la periodicità del reticolo cristallino e di conseguenza alterano la struttura a bande del materiale, introducendo stati energetici disponibili nel gap di energie proibite. Tali stati si dividono in due categorie: shallow levels e deep levels. Gli shallow levels devono il loro nome al fatto che gli stati elettronici ad essi associati hanno energie dell'ordine del meV, si collocano quindi vicino al bordo della banda di valenza o conduzione. I deep levels, al contrario, sono così ch

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8

Karbasi, Hossein. "Deep level transient spectroscopy of heteroepitaxial polycrystalline diamond and aluminum nitride /." free to MU campus, to others for purchase, 1998. http://wwwlib.umi.com/cr/mo/fullcit?p9901245.

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9

Chavva, Venkataramana Reddy. "Deep level transient spectroscopy studies of gallium arsenide and silicon carbide." Thesis, Hong Kong : University of Hong Kong, 1997. http://sunzi.lib.hku.hk/hkuto/record.jsp?B19739758.

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10

Tsia, Man Juliana. "Positron deep level transient spectroscopy in semi-insulating GaAs using the positron velocity transient method." Hong Kong : University of Hong Kong, 2000. http://sunzi.lib.hku.hk/hkuto/record.jsp?B22424775.

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11

謝敏 and Man Juliana Tsia. "Positron deep level transient spectroscopy in semi-insulating GaAs using the positron velocity transient method." Thesis, The University of Hong Kong (Pokfulam, Hong Kong), 2000. http://hub.hku.hk/bib/B3122524X.

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12

張敬東 and Jingdong Zhang. "The development of positron deep level transient spectroscopy using variable energy positron beam and conventional deep level transientspectroscopy using digital capacitance meter." Thesis, The University of Hong Kong (Pokfulam, Hong Kong), 2002. http://hub.hku.hk/bib/B31227077.

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13

Ding, Guangwei, and 丁光炜. "Deep level transient spectroscopic study of nitrogen-implanted ZnO single crystal." Thesis, The University of Hong Kong (Pokfulam, Hong Kong), 2010. http://hub.hku.hk/bib/B45541590.

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14

Ho, Lok-ping, and 何樂平. "Laplace transform deep level transient spectroscopic study on PLD grown ZnO." Thesis, The University of Hong Kong (Pokfulam, Hong Kong), 2015. http://hdl.handle.net/10722/211117.

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The fundamental physics and techniques employed in Laplace transform deep level transient spectroscopy (L-DLTS) are reviewed. A Laplace-DLTS system has been constructed. The high resolving power of this system has been demonstrated experimentally. The L-DLTS system was applied to characterize the defects in undoped n-type ZnO thin film grown by the pulsed laser deposition (PLD) method. A 0.3 eV deep trap has been identified. The formations of Ec-0.39eV and Ec-0.20eVcan be enhanced when the sample surface is seriously damaged by high temperature annealing.AnEc-0.25eV trap is identified in t

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15

Luo, Jiaming. "Studies of electron irradiation induced deep level defects in p-type 6H-SIC." Click to view the E-thesis via HKUTO, 2009. http://sunzi.lib.hku.hk/hkuto/record/B41758158.

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16

Luo, Jiaming, and 羅佳明. "Studies of electron irradiation induced deep level defects in p-type 6H-SIC." Thesis, The University of Hong Kong (Pokfulam, Hong Kong), 2009. http://hub.hku.hk/bib/B41758158.

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17

Lu, Xiaohong, and 吕小红. "Deep level transient spectroscopic study of intrinsic defects in particle-irradiated ZnO single crystal materials." Thesis, The University of Hong Kong (Pokfulam, Hong Kong), 2012. http://hub.hku.hk/bib/B47869914.

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Zinc oxide (ZnO), as a Ⅱ-Ⅵ compound semiconductor with a wide direct band gap, has attracted great attention from the worldwide researchers for its potential application in the fields of spintronics and optoelectronics. At present research about the defects in ZnO and ZnO-based materials is still far from complete. The deep level defects in melted grown ZnO single crystal induced by helium ions implantation and electron irradiation, as well as their thermal evolution, were studied in this research using the technique of deep level transient spectroscopy (DLTS) and photoluminescence (PL). DL

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18

Zhu, Congyong. "Deep level defects study of arsenic implanted ZnO single crystal." Click to view the E-thesis via HKUTO, 2008. http://sunzi.lib.hku.hk/hkuto/record/B40987759.

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19

Kuang, Li-chao. "Deep-level transient spectroscopy, DLTS, for the determination of trap parameters in semiconductor devices." Thesis, National Library of Canada = Bibliothèque nationale du Canada, 1997. http://www.collectionscanada.ca/obj/s4/f2/dsk3/ftp04/mq23373.pdf.

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20

Booker, Ian Don. "Carrier Lifetime Relevant Deep Levels in SiC." Doctoral thesis, Linköpings universitet, Halvledarmaterial, 2015. http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-121515.

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Silicon carbide (SiC) is currently under development for high power bipolar devices such as insulated gate bipolar transistors (IGBTs). A major issue for these devices is the charge carrier lifetime, which, in the absence of structural defects such as dislocations, is influenced by point defects and their associated deep levels. These defects provide energy levels within the bandgap and may act as either recombination or trapping centers, depending on whether they interact with both conduction and valence band or only one of the two bands. Of all deep levels know in 4H-SiC, the intrinsic carbo

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21

Zhu, Congyong, and 朱從佣. "Deep level defects study of arsenic implanted ZnO single crystal." Thesis, The University of Hong Kong (Pokfulam, Hong Kong), 2008. http://hub.hku.hk/bib/B40987759.

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22

Kolev, Plamen V. "Development and applications of a new deep level transient spectroscopy method and new averaging techniques." Thesis, National Library of Canada = Bibliothèque nationale du Canada, 1998. http://www.collectionscanada.ca/obj/s4/f2/dsk1/tape11/PQDD_0018/NQ37720.pdf.

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23

Khattak, Gul Marjan. "An investigation of defects in N-type CdTe using the deep level transient spectroscopy technique." Thesis, University of Hull, 1990. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.314643.

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24

Ye, Ziran, and 叶自然. "Studies of oxygen implantation induced deep level defects in zinc oxide single crystal." Thesis, The University of Hong Kong (Pokfulam, Hong Kong), 2011. http://hub.hku.hk/bib/B47153854.

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Zinc Oxide (ZnO)is a wide band gap semiconductor which has attracted great attention because of its wide applicability. In order to obtain semiconductor devices with stable and reproducible properties further study of deep level defects is essential. DLTS (Deep level Transient Spectroscopy) is a direct and straightforward techniqueto determine the energy level of the deep level defects. Other information such as activation energy and capture cross section of the defect can also be obtained through this method. In our study ZnO single crystal samples were implanted by oxygen with the energy of

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25

Meyer, Walter Ernst. "Digital DLTS studies on radiation induced defects in Si, GaAs and GaN." Pretoria : [s.n.], 2006. http://upetd.up.ac.za/thesis/available/etd-06182007-143820.

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26

Zhang, Jingdong. "Development of optimized deconvoluted coincidence doppler broadening spectroscopy and deep level transient spectroscopies with applications to various semiconductor materials." Click to view the E-thesis via HKUTO, 2006. http://sunzi.lib.hku.hk/hkuto/record/B38279010.

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27

Nyamhere, Cloud. "Characterization of process and radiation induced defects in Si and Ge using conventional deep level transient spectroscopy (DLTS) and Laplace-DLTS /." Access to E-Thesis, 2009. http://upetd.up.ac.za/thesis/available/etd-02022010-134937/.

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28

Gleason, Darryl A. "Scanned Probe Spectroscopy of Traps in Cross-Sectioned AlGaN/GaN Devices." The Ohio State University, 2019. http://rave.ohiolink.edu/etdc/view?acc_num=osu1554299949405238.

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29

Zhang, Jingdong, and 張敬東. "Development of optimized deconvoluted coincidence doppler broadening spectroscopy and deep level transient spectroscopies with applicationsto various semiconductor materials." Thesis, The University of Hong Kong (Pokfulam, Hong Kong), 2006. http://hub.hku.hk/bib/B38279010.

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30

Bruening, Joseph A. "Analysis of radiation damaged and annealed gallium arsenide and indium phosphide solar cells using deep level transient spectroscopy." Thesis, Monterey, California. Naval Postgraduate School, 1993. http://hdl.handle.net/10945/26872.

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Power loss in spacecraft solar cells due to radiation damage was investigated. The mechanisms behind the degradation and based on deep-level defects in the crystalline lattice structure of the solar cell. Through a process known as Deep Transient Spectroscopy (DLTS), a correlation can be made between damage/recovery and trap energy of the cell. Gallium (GaAs/Ge) and Indium Phosphide (InP) solar cells were subjected to 1 MeV electron irradiation, to fluences of 1E16 electrons/sq cm. Attempts at recovery included thermal annealing, alone, and with an applied forward bias current, and injection a

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31

Pinzon, Dimas Jr. "Analysis of radiation damaged and annealed gallium arsenide and indium phosphide solar cells using deep level transient spectroscopy techniques." Thesis, Monterey, California. Naval Postgraduate School, 1991. http://hdl.handle.net/10945/25677.

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Approved for public release; distribution is unlimited<br>Degradation of solar cell performance from radiation damage was found to be reversed through annealing processes. The mechanisms behind the degradation and recovery is based on deep-level traps, or defects, in the lattice structure of the solar cell. Through a process known as Deep Level Transient Spectroscopy (DLTS) a correlation can be made between damage/recovery and trap energy level/concentration of the cell. Gallium arsenide (GaAs) and Indium phosphide (InP) solar cells were subjected to 1 MeV electron irradiation by a Dynamitr

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32

Danga, Helga Tariro. "Investigation of electron-beam deposition and related damage in p-Si by means of Laplace and conventional deep-level transient spectroscopy." Thesis, University of Pretoria, 2019. http://hdl.handle.net/2263/77896.

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The study of defects in semiconductors has been on-going for over 50 years. During this time, researchers have been studying the origins and identity of process induced defects, a task which has proved to be very demanding. While defects in silicon, the most widely used semiconductor, have been widely studied, there is more literature on n-type silicon than on p-type silicon. Compared to n-type silicon, p-type silicon is challenging to work with when it comes to making good Schottky diodes. A good rectifying device is essential for the performing of electrical characterisation techniques such

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33

Åberg, Denny. "Capacitance Spectroscopy of Point Defects in Silicon and Silicon Carbide." Doctoral thesis, KTH, Microelectronics and Information Technology, IMIT, 2001. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-3205.

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34

Swartz, Craig H. "Hall effect and photoconductivity lifetime studies of GaN, InN, and Hg₁-[subscript x]Cd[subscript x]Te." Morgantown, W. Va. : [West Virginia University Libraries], 2005. https://eidr.wvu.edu/etd/documentdata.eTD?documentid=4450.

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Thesis (Ph. D.)--West Virginia University, 2005.<br>Title from document title page. Document formatted into pages; contains ix, 72 p. : ill. Includes abstract. Includes bibliographical references (p. 68-72).

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35

Sasikumar, Anup. "Quantitative spectroscopy of reliability limiting traps in operational gallium nitride based transistors using thermal and optical methods." The Ohio State University, 2014. http://rave.ohiolink.edu/etdc/view?acc_num=osu1415298691.

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36

Cardwell, Drew. "Investigation of electrically-active defects in AlGaN/GaN high electron mobility transistors by spatially-resolved spectroscopic scanned probe techniques." The Ohio State University, 2013. http://rave.ohiolink.edu/etdc/view?acc_num=osu1373894407.

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37

Schmidt, Matthias. "Space Charge Spectroscopy applied to Defect Studies in Ion-Implanted Zinc Oxide Thin Films." Doctoral thesis, Universitätsbibliothek Leipzig, 2012. http://nbn-resolving.de/urn:nbn:de:bsz:15-qucosa-84485.

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Die vorliegende Arbeit befasst sich mit der Erzeugung und Detektion von Defekten im Halbleiter Zinkoxyd (ZnO). Der Fokus liegt dabei auf der Verwendung raumladungszonenspektroskopischer Techniken zur Detektion und Charakterisierung elektronischer Defektzustände. Es werden theoretische Aspekte von Raumladungszonen an Halbleitergrenzflächen und den darin enthaltenen elektronischen Defektzuständen behandelt. Das elektrische Potential in der Raumladungszone genügt einer nichtlinearen, eindimensionalen Poissongleichung, für die bekannte, näherungsweise Lösungen vorgestellt werden. Für eine homogen

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38

Armstrong, Andrew M. "Investigation of deep level defects in GaN:C, GaN:Mg and pseudomorphic AlGaN/GaN films." Columbus, Ohio : Ohio State University, 2006. http://rave.ohiolink.edu/etdc/view?acc%5Fnum=osu1164038818.

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39

Bano, Nargis. "Fabrication and Characterization of ZnO Nanorods Based Intrinsic White Light Emitting Diodes (LEDs)." Doctoral thesis, Linköpings universitet, Fysik och elektroteknik, 2011. http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-71829.

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ZnO material based hetero-junctions are a potential candidate for the design andrealization of intrinsic white light emitting devices (WLEDs) due to several advantages overthe nitride based material system. During the last few years the lack of a reliable andreproducible p-type doping in ZnO material with sufficiently high conductivity and carrierconcentration has initiated an alternative approach to grow n-ZnO nanorods (NRs) on other ptypeinorganic and organic substrates. This thesis deals with ZnO NRs-hetero-junctions basedintrinsic WLEDs grown on p-SiC, n-SiC and p-type polymers. The NRs we

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40

Djebbar, El-hocine. "A DLTS study of copper indium diselenide." Thesis, University of Salford, 1998. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.391312.

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41

Hellig, Kay. "Untersuchung tiefer Stoerstellen in Zinkselenid." Thesis, Universitätsbibliothek Chemnitz, 1997. http://nbn-resolving.de/urn:nbn:de:bsz:ch1-199700176.

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Das Halbleitermaterial Zinkselenid (ZnSe) wurde mit Deep Level Transient Spectroscopy (DLTS) untersucht. Fuer planar N-dotierte, MO-CVD-gewachsene ZnSe-Schichten auf p-GaAs wurden vorwiegend breite Zustandsverteilungen, aber auch tiefe Niveaus gefunden. In kristallin gezuechtetem, undotiertem ZnSe wurden tiefe Stoerstellen nachgewiesen.

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42

Chevtchenko, Serguei Aleksandrovich. "DEFECTS IN GaN: AN EXPERIMENTAL STUDY." VCU Scholars Compass, 2007. http://scholarscompass.vcu.edu/etd_retro/72.

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This work examines extended, point, and surface defects in GaN by means of electric force microscopy, photoluminescence and deep-level transient spectroscopy. Modeling of the surface band bending, its origin, and the effects of fabrication processing steps are discussed in the first part of the dissertation. Experimental results indicate that spontaneous polarization does not play a predominant role in GaN band bending. An increase of surface band bending due to annealing and etching was observed, while passivation did not produce changes. However, passivation did reduce reverse-bias leakage c

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43

Lago, Nicolò. "Characterization and modelling of organic devices for simultaneous stimulation and recording of cellular electrical activity with Reference-Less Electrolyte-Gated Organic Field-Effect Transistors." Doctoral thesis, Università degli studi di Padova, 2018. http://hdl.handle.net/11577/3426781.

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The study of neuronal and neurodegenerative diseases requires the development of new tools and technologies to create functional neuroelectronics allowing both stimulation and recording of cellular electrical activity. In the last decade organic electronics is digging its way in the field of bioelectronics and researchers started to develop neural interfaces based on organic semiconductors. The interest in such technologies arise from the intrinsic properties of organic materials such as low cost, transparency, softness and flexibility, as well the biocompatibility and the suitability in reali

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44

Latrach, Soumaya. "Optimisation et analyse des propriétés de transport électroniques dans les structures à base des matériaux AlInN/GaN." Thesis, Université Côte d'Azur (ComUE), 2018. http://www.theses.fr/2018AZUR4243.

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Les matériaux III-N ont apporté un gain considérable au niveau des performances des composants pour les applications en électronique de puissance. Les potentialités majeures du GaN pour ces applications résident dans son grand champ de claquage qui résulte de sa large bande interdite, son champ de polarisation élevé et sa vitesse de saturation importante. Les hétérostructures AlGaN/GaN ont été jusqu’à maintenant le système de choix pour l’électronique de puissance. Les limites sont connues et des alternatives sont étudiées pour les surmonter. Ainsi, les hétérostructures InAlN/GaN en accord de

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45

Zhang, Teng. "Caractérisations des défauts profonds du SiC et pour l'optimisation des performances des composants haute tension." Thesis, Lyon, 2018. http://www.theses.fr/2018LYSEI108/document.

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En raison de l'attrait croissant pour les applications haute tension, haute tempé-rature et haute fréquence, le carbure de silicium (SiC) continue d'attirer l'attention du monde entier comme l'un des candidats les plus compétitifs pour remplacer le sili-cium dans le champ électrique de puissance. Entre-temps, il est important de carac-tériser les défauts des semi-conducteurs et d'évaluer leur influence sur les dispositifs de puissance puisqu'ils sont directement liés à la durée de vie du véhicule porteur. De plus, la fiabilité, qui est également affectée par les défauts, devient une question i

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46

Chawanda, Albert. "Electrical and structural characterization of metal germanides." Thesis, University of Pretoria, 2010. http://hdl.handle.net/2263/28009.

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Metal-semiconductor contacts have been widely studied in the past 60 years. These structures are of importance in the microelectronics industry. As the scaling down of silicon-based complementary metal-oxide-semiconductor (CMOS) devices becomes more and more challenging, new material and device structures to relax this physical limitation in device scaling are now required. Germanium (Ge) has been proposed as a potential alternative to silicon. In this thesis a systematic study of the thermally induced reaction of transition metals with the n-Ge substrate is outlined. Investigations in the cha

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47

Ciechonski, Rafal. "Growth and characterization of SiC and GaN." Doctoral thesis, Linköpings universitet, Materiefysik, 2007. http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-10314.

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At present, focus of the SiC crystal growth development is on improving the crystalline quality without polytype inclusions, micropipes and the occurrence of extended defects. The purity of the grown material, as well as intentional doping must be well controlled and the processes understood. High-quality substrates will significantly improve device performance and yield. One of the aims of the thesis is further understanding of polytype inclusion formation as well as impurity control in SiC bulk crystals grown using PVT method also termed seeded sublimation method. Carbonization of the source

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48

Schmidt, Florian. "Raumladungszonenspektroskopische Methoden zur Charakterisierung von weitbandlückigen Halbleitern." Doctoral thesis, Universitätsbibliothek Leipzig, 2015. http://nbn-resolving.de/urn:nbn:de:bsz:15-qucosa-158772.

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Die Arbeit befasst sich mit der Untersuchung von weitbandlückigen Halbleitern über raumladungszonenspektroskopische Methoden. Dabei liegt der Schwerpunkt auf der Detektion von elektronisch und optisch aktiven Defektzuständen in solchen Materialien. Die Experimente wurden exemplarisch an dem II-VI Halbleiter Zinkoxid (ZnO) durchgeführt, welcher inform von Volumenkristallen, Mikronadeln und Dünnfilmen zur Verfügung stand. Raumladungszonen wurden über Schottky-Kontakte realisiert. Nach einer Einführung in die Theorie der Raumladungszonenspektroskopie wird ein Überblick über Defekte in verschieden

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49

Galiano, Kevin. "Scanning Probe Microscopy Measurements and Simulations of Traps and Schottky Barrier Heights of Gallium Nitride and Gallium Oxide." The Ohio State University, 2020. http://rave.ohiolink.edu/etdc/view?acc_num=osu1576715425331868.

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50

James, Daniel. "Fabrication and electrical characterisation of quantum dots : uniform size distributions and the observation of unusual electrical characteristics and metastability." Thesis, University of Manchester, 2010. https://www.research.manchester.ac.uk/portal/en/theses/fabrication-and-electrical-characterisation-of-quantum-dots-uniform-size-distributions-and-the-observation-of-unusual-electrical-characteristics-and-metastability(01bb9182-5290-4ad1-b6a4-3aed3970dbcf).html.

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Quantum dots (QDs) are a semiconductor nanostructure in which a small island of one type of semiconductor material is contained within a larger bulk of a different one. These structure are interesting for a wide range of applications, including highly efficient LASERs, high-density novel memory devices, quantum computing and more. In order to understand the nature of QDs, electrical characterisation techniques such as capacitance-voltage (CV) profiling and deep-level transient spectroscopy (DLTS) are used to probe the nature of the carrier capture and emission processes. This is limited, howev

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